674 results about "Copper plating" patented technology

Active and passive electronic components are placed on a substrate and encapsulated with mold material to produce a molded core substrate for fabricating a hybrid integrated circuit (IC) device. A carrier has a release film laminated to a face thereof. A seed layer of copper is added over the release film and fiducials are plated onto the copper seed layer for component placement using alignment marks on the fiducials. Mold material is applied to the encapsulation layer and around and over the components. Mold material is ground planar with component tops. The carrier and release film are removed, leaving the copper seed layer exposed, which is etched to a pattern. Holes are formed in the mold material and then surfaces thereof are copper plated. A multilayer dielectric film is laminated over copper plating. Vias are formed in the multilayer dielectric film for connections to components.

The invention relates to a copper plating electroplating solution as well as a preparation method and application thereof. The copper plating electroplating solution comprises the following components: copper pyrophosphate, a complexing agent, ammonia water, a bath building agent, a gloss agent, a pH regulator and water, the complexing agent is selected from potassium pyrophosphate or sodium pyrophosphate; the mass percentage concentration of the ammonia water is 20%-30%, and the volume concentration of the ammonia water in the copper plating electroplating solution is 2-10 mL / L; the mass concentration of the gloss agent in the copper plating electroplating solution is 10 to 50 mg / L; and the pH value of the copper plating electroplating solution is 7.8-10. When the copper plating solution is used for silver grid line copper plating, on the premise that the cost is reduced, the silver grid line copper plating has a good plating effect, the silver grid line is firm and does not fall off, and good conductive performance is kept.

The invention relates to the technical field of electroplating, and discloses a ceramic substrate through hole electro-coppering hole filling process control method which comprises the following steps: acquiring structural parameters of a target ceramic substrate through hole, optimizing the proportion of a prefabricated electroplating solution to obtain a proportioned electroplating solution, analyzing a composite electroplating medium of the proportioned electroplating solution, and inquiring a pulse current waveform; the copper deposition morphology is monitored, polarization effect coefficients under different current densities are calculated, duty ratio indexes are optimized to score a shaped current sequence, a multi-order electric field is applied to obtain in-hole flow field data, and the copper deposition uniformity is calculated; and performing multi-cycle electroplating-annealing iteration to obtain a copper hole filling structure, testing residual stress, identifying a lattice distortion section, generating a crystallization-annealing curve, and formulating a process optimization scheme according to regulation and control data. According to the invention, the reliability of the through hole electro-coppering filling process can be improved.

The invention relates to the technical field of metal processing, and discloses a production method of an ER2209 austenite ferrite duplex stainless steel welding wire, the ER2209 austenite ferrite duplex stainless steel welding wire comprises an adopted vacuum induction melting furnace and a liquid storage tank, the outer side of the vacuum induction melting furnace is provided with a protective shell, one side of the liquid storage tank is fixedly connected with a conveying pump, and the other side of the liquid storage tank is fixedly connected with a vacuum pump. A cooling assembly is arranged in the protective shell. The preparation method comprises the following steps that S1, raw materials are prepared and smelted; s2, cooling the vacuum induction melting furnace; s3, forging is conducted; s4, hot rolling and solution treatment; s5, acid pickling and surface treatment; s6, cold drawing and intermediate annealing; s7, surface copper plating and finish drawing; and S8, winding and packaging. In the acid pickling process of the wire rod, the oxidation degree of the wire rod is detected, meanwhile, the concentration of the acid pickling solution is adjusted according to the actual situation, and the situation that the surface of the wire rod is excessively corroded or is not thoroughly cleaned due to the fact that the concentration of the acid pickling solution is improper is prevented.

The invention discloses a copper plating method for a superconducting strip. The method comprises the following steps: S1, carrying out initial electrochemical copper plating on a processed strip; s2, high-precision continuous thickness measuring equipment is adopted to test the thickness of the plating layer in the length direction and the width direction of the strip; s3, compensating the thickness error by adjusting the position of the shielding plate according to the thickness distribution data obtained by testing; and S4, the steps S2-S3 are repeated until the plating layer is accumulated to reach the target thickness. The thicknesses of the copper plating layers on the two sides of the superconducting tape are adjusted by adjusting the shielding plates, non-contact detection and dynamic adjustment of the thickness of the plating layer are achieved, and the precision of the thickness of the plating layer is improved.

The invention discloses a high-reliability hole copper control method for an automobile circuit board, and the method comprises the steps: adjusting the drilling parameters according to the hole diameter and the thickness-diameter ratio, improving the roughness of a hole wall through optimizing a drilling technology, and enabling the copper thickness of the hole wall after copper plating to meet the production requirements. According to the method, after the drilling technology is optimized, the hole wall roughness is smaller than or equal to 25 micrometers, and after electroplating, the hole wall copper thickness is larger than or equal to 25 micrometers.

The invention relates to the technical field of current collectors, in particular to a diversion method of a functional current collector. The composite carbon nanotube is obtained by sequentially carrying out oxidation treatment, acylating chlorination treatment, modification treatment, amination treatment and graft polymerization treatment on a multi-wall carbon nanotube. Uniformly mixing the PET resin, the composite carbon nanotubes, a surfactant and a coupling agent, and carrying out standing, melt extrusion, tape casting, sheet casting treatment and two-way stretching to obtain the PET base film. The preparation method comprises the following steps: sequentially sputtering a copper layer on the surface of a PET (Polyethylene Terephthalate) base film, carrying out water electroplating on the copper layer, then coating the surface of the copper layer with an active substance, and then directly dipping a conductive adhesive solution in a lug position which is not plated with copper to obtain a pole piece; and stacking a plurality of pole pieces together, and inserting a current collector at the center of the stack to obtain the functional current collector. The functional current collector prepared by the method has good conductivity and mechanical property, so that the functional current collector has a wide application prospect in the technical field of current collectors.

The invention provides a preparation method of a bipolar current collector based on a selective double-sided modified masking film. The preparation method comprises the following steps: depositing a Ni-Cr alloy layer on a single side surface of an aluminum substrate; one side of the masking film is etched to form a roughened surface, and the other side of the masking film is hydrophobic to form a hydrophobic surface; the roughened surface of the masking film and the surface, without the Ni-Cr alloy layer, of the aluminum matrix are pressed, and the edge is coated with curing glue; and placing the pressed and glued sample in an electroplating solution to electroplate a copper layer, finally cutting off an edge glue sealing area, and stripping the masking film. According to the preparation method, the masking film used for protecting the back surface of the aluminum substrate is subjected to double-sided differential treatment, the edge sealing technology is matched, and the Ni-Cr alloy is adopted for bottoming, so that the adhesive force between the copper plating layer and the aluminum substrate is improved, the risk of causing corrosion of a primary battery is reduced, the bipolar current collector which is firmly combined and has a pure interface can be prepared, and the service life of the bipolar current collector is prolonged. And a feasible solution is provided for realizing light-weight and high-performance current collectors for electronic devices such as lithium batteries and the like.

The invention provides a copper-based graphene composite material as well as a preparation method and application thereof, and the preparation method comprises the following steps: plating copper films on two surfaces of graphene paper subjected to ion cleaning by adopting magnetron sputtering to obtain Cu-GP; placing copper foils on two sides of the Cu-GP, and performing vacuum hot pressing to obtain the copper-based graphene composite material. According to the method, through magnetron sputtering deposition and vacuum hot pressing technologies, the prepared composite material has excellent in-plane heat conductivity and inter-plane heat conductivity; and the material also has thermal responsiveness and excellent mechanical properties, such as toughness, breaking strength and the like.

The invention belongs to the technical field of aluminum alloy electroplating, and particularly relates to a preparation method of a silver coating of aluminum and aluminum alloy. The preparation method of the silver plating layer of the aluminum and the aluminum alloy comprises the following steps that the aluminum or the aluminum alloy is sequentially subjected to alkali etching, primary acid pickling, primary zinc dipping, secondary acid pickling, secondary zinc dipping, copper plating, silver pre-plating and cyaniding silver plating; wherein during copper plating, a copper plating solution comprises 30 g / L to 40 g / L of CuCN and 50 g / L to 60 g / L of NaCN; a silver pre-plating solution in the silver pre-plating process comprises 2-3 g / L of AgCN and 90-100 g / L of KCN, the current density in the silver pre-plating process is 0.3-0.6 A / dm < 2 >, and the silver pre-plating time is 1-2 min. And by controlling electroplating process parameters of copper plating and silver pre-plating in the electroplating process, the compactness of the plating layer is improved, the capability of resisting water vapor and the like is effectively enhanced, and then the corrosion resistance of the silver plating layer is improved.

The present invention relates to the field of photovoltaic cell manufacturing, specifically a process using a strippable blue glue as an electroplating seed layer, the present invention includes uniformly coating a 5-50 micron strippable blue glue on the surface of an HJT cell and curing it to form a seed layer, placing it in a copper electroplating solution, optimizing electroplating parameters according to cell characteristics to deposit copper ions to form grid lines, stripping the blue glue by physical or chemical methods after electroplating without residue and recyclable, and finally cleaning and drying the cell surface and performing electrical and reliability tests. This process has many advantages, compared with the traditional silver electrode process, the cost is reduced, the blue glue allows the copper grid line to be quickly formed to improve production efficiency, it is easy to strip to ensure cell performance, and the recyclability of the blue glue reflects environmental protection, and has good application prospects in the field of photovoltaic cell manufacturing.

The invention relates to the technical field of electroplating, in particular to an acidic copper plating polishing agent and a preparation method thereof. The acidic copper plating brightening agent is prepared from the following raw materials in parts by mass: 25 to 30 parts of brightening agent, 6 to 8 parts of leveling agent, 40 to 50 parts of wetting agent, 7 to 10 parts of hydroxyethyl cellulose, 8 to 12 parts of collagen and 900 to 930 parts of deionized water. The acidic copper plating polishing agent has excellent technical effects, can be widely applied to the field of copper electroplating, improves the quality of a copper electroplating layer, including glossiness, tensile strength, elongation, hole filling efficiency, uniform plating capacity, through hole deep plating capacity and the like, and meets the requirements of circuit board plated through hole conduction capacity.

The invention discloses a manufacturing method of a small-spacing lamp panel. The manufacturing method comprises the following steps: pressing; drilling is conducted, specifically, through holes are mechanically drilled, and the hole diameter is 0.2-0.3 mm; copper deposition: the thickness of a hole wall copper plating layer is 0.3-0.5 [mu] m; electroplating through holes, wherein the copper thickness in the holes is greater than or equal to 18 microns; the through holes are filled with epoxy resin with the shrinkage rate smaller than 0.5%, and curing is conducted; ceramic board grinding is conducted, an aluminum oxide ceramic grinding wheel is adopted for board grinding, the resin surface in the hole is flush with the surface of the outer layer copper foil of the multi-layer circuit board, the surface roughness Ra is smaller than 0.1 micrometer, and board grinding technological parameters are as follows: the pressure is 5-8 N / cm < 2 >, the rotating speed is 200-300 rpm, and the linear speed is 1-2 m / min; secondary copper deposition: copper deposition is carried out on the surface of the hole plugging resin to form a copper plating layer, and the thickness of the copper plating layer is 0.3-0.5 [mu] m; the whole board is electroplated, and the copper thickness on the resin is larger than or equal to 12 micrometers; and manufacturing an outer-layer circuit. The manufacturing method of the small-spacing lamp panel has the advantages of being low in cost, high in yield, simple in process and the like.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate; forming a copper column structure on the substrate, wherein the copper column structure comprises a plurality of layers of copper column sections which are sequentially stacked and connected; the forming method of the copper column structure comprises the steps that a plurality of photoetching electroplating processes are carried out on a substrate, a layer of copper column section is formed in each photoetching electroplating process, and then the thickness of a photoetching layer formed in each photoetching electroplating process can be reduced, so that the technological difficulty of forming the photoetching layer and photoetching development is reduced. And the electroplating time of each layer of copper cylinder section is effectively shortened compared with the time of electroplating the whole copper cylinder at one time, so that the phenomena of swelling, cracking and the like of the photoetching layer in the electroplating operation for a long time can be avoided. The depth-to-width ratio of the single-layer copper column section is small, the exchange efficiency of copper plating liquid medicine can be guaranteed, and then the copper nodule phenomenon is reduced. And the copper column structure is divided into multiple layers of copper column sections, so that the height limitation of electroplating the whole copper column at a time can be broken through, and the copper column structure has higher designability.

The invention discloses a preparation method of a surface copper-plated molybdenum wire, which innovatively introduces an electrolysis process after a traditional molybdenum wire processing technology, removes a surface graphite coating through electrochemical pretreatment to prepare a clean white wire substrate, and then realizes uniform plating of a copper layer by adopting an electroplating technology. According to the innovative method, the smoothness of the surface of the molybdenum wire is improved through electrolytic cleaning, a better environment is provided for copper plating, the copper plating layer protects the molybdenum wire, meanwhile, the conductivity of the electrode wire is remarkably improved, the overall resistance of the electrode wire is reduced, discharge energy is saved, and loss of the electrode wire in the machining process is reduced; the high conductivity requirement of large-current cutting can be met, and the surface quality requirement of small-current fine machining can also be met.

This application relates to the field of communication technology, and discloses an antenna, its fabrication method, and a terminal device. The antenna includes a substrate and a radiator. The radiator includes a copper plating layer and a protective layer. The copper plating layer is formed on the surface of the substrate, and a passivation layer is disposed on the side of the copper plating layer facing away from the substrate. The passivation layer can protect the copper plating layer, reduce the risk of corrosion of the copper plating layer, and thus improve the reliability of the antenna. Furthermore, since the layer structure of the radiator is relatively simple, the antenna fabrication process is significantly simplified, and the manufacturing cost is reduced.

The invention provides a gradient composite graphene electrolysis electrode plate and an in-situ preparation method thereof. The electrode plate comprises a metal conductive base material (such as titanium alloy), a porous ceramic skeleton layer (Al2O3-40% ZrO2, the porosity of which is 30 + / -5%), a chemical copper plating layer for filling pores, an electroplated nickel-ruthenium alloy catalytic layer (Ni: Ru = 9: 1) and 3-5 graphene functional layers (ID / IG is less than or equal to 0.08) grown in situ, wherein the porous ceramic skeleton layer (Al2O3-40% ZrO2) is laser-cladded on the surface of the porous ceramic skeleton layer (Al2O3-40% ZrO2). The preparation method comprises the following steps: performing laser cladding on a ceramic skeleton, wherein the power density is 300-500W / mm < 2 >, and sintering at 1600 DEG C to form metallurgical bonding; gradient plating: electroless copper plating (containing nano-diamond enhancement) and pulse electroplating of Ni Ru (duty ratio is 1: 5); and performing directional CVD growth: after reducing the catalyst layer by H2 at 1050 DEG C, introducing CH4 / H2 (the volume ratio is 1: 4) in a pulse manner, and realizing full coverage of the inner wall of the mesh by vortex air intake. The technical effects are as follows: (1) the overpotential of chlorine evolution in saturated salt water at 80 DEG C is as low as 268mV (1A / cm < 2 >); (2) strong acid environment service life gt; the time is 100 thousand hours (12 times that of the national standard); (3) the production cost is lt; and 620 / m < 2 > (90% lower than that of a traditional ruthenium-iridium coating). The problems of graphene transfer damage and special-shaped electrode covering are solved.

The invention discloses a blending method of a copper plating bearing agent, which comprises a blending device, and the blending device is provided with a structure for simultaneously starting multiple powers with a stirring structure for a feeding port and is used for blending the copper plating bearing agent; the method comprises the following steps: raw material pretreatment, device debugging, step-by-step feeding, and starting of a multi-power structure by a filter screen plate. And the concentration is finely adjusted until the concentration of the copper plating bearing agent reaches the standard, and qualified mixed liquid is guided out. By adopting the method, the adding uniformity of the copper sulfate pentahydrate powder and the overall blending efficiency are improved, accurate blending of the copper plating bearing agent is guaranteed, and accurate control over the concentration of the copper plating bearing agent can be achieved through step-by-step input, medium-term sampling detection and fine adjustment.

The invention provides a treatment method for synergistically enhancing the comprehensive performance of a neodymium-iron-boron magnet, and belongs to the technical field of magnetic materials. According to the method, a heavy rare earth layer and a corrosion-resistant metal layer such as copper, nickel and cobalt for promoting grain boundary diffusion of heavy rare earth are respectively deposited on the surface of the neodymium-iron-boron magnet by adopting a multi-layer electroplating method, the coercivity of the neodymium-iron-boron magnet is enhanced through grain boundary diffusion, and the corrosion resistance of the magnet is enhanced through a nickel-cobalt coating. The treatment method comprises the following steps: carrying out electrochemical deposition on the neodymium-iron-boron magnet in a heavy rare earth metal plating solution, and then respectively electroplating a copper plating layer and a nickel-cobalt plating layer to obtain a heavy rare earth-containing plating layer with strong corrosion resistance and good plating film binding force; the neodymium-iron-boron magnet containing the heavy rare earth coating is subjected to heat treatment, and the coercive force of the magnet is improved through heavy rare earth grain boundary diffusion. The neodymium iron boron grain boundary diffusion process and the surface corrosion prevention process are subjected to integrated treatment, the technological process of high-performance neodymium iron boron industrial preparation is shortened, and the coercive force and the corrosion resistance of the magnet are comprehensively enhanced.

The invention discloses a method for improving copper plating uniformity of a circuit board. The method comprises the following steps: performing surface treatment on a drilled circuit board; the circuit board is placed in the electroplating solution to be electroplated, and the technological conditions are that the temperature of the electroplating solution is 20-30 DEG C, and the current density is 1.5-2.5 A / dm < 2 >; the main chemical components of the electroplating solution comprise copper sulfate pentahydrate, sulfuric acid, hydrochloric acid and an additive, the concentration of the copper sulfate pentahydrate is 200-250 g / L, the concentration of the sulfuric acid is 50-70 g / L, and the concentration of chloride ions is 70-90 ppm. According to the method for improving the copper plating uniformity of the circuit board, by optimizing the components of the electroplating liquid and the parameters of the electroplating process, a plating layer is more uniform, the copper thickness range inside and outside holes is controlled to be about 8.0 microns, and the requirements of high-reliability PCBs (such as HDI and carrier plates) with the thickness-diameter ratio larger than 8: 1, such as 5G communication backboards and the like are met.

The invention discloses a pulse copper plating process with low TOC and high deep plating capacity. The pulse copper plating process comprises the following steps that 1, pretreatment is conducted, specifically, a substrate is subjected to cleaning, oil removing and acid etching rust removing treatment; 2, surface treatment: treating the surface of the substrate by using a treating agent; thirdly, acid copper sulfate copper plating is conducted, specifically, the treated substrate is placed in a copper plating tank, and electroplating is conducted through a copper electroplating solution of high-purity copper sulfate with the purity being 99.8%; 4, post-treatment is conducted, specifically, the copper-plated substrate is cleaned and dried; step 5, inspection: performing external inspection and performance inspection on the dried substrate; by adding the electroplating liquid, reducing the bath changing frequency and reducing the sewage treatment capacity, the production cost is reduced, the pollution to the environment is greatly reduced, and the production cost of an enterprise is reduced; tOC is low under the same load condition, the cylinder changing frequency is reduced, and wastewater discharge is reduced; meanwhile, due to low TOC, the service life of the additive can be doubled, and the production cost is reduced.

The invention relates to a method for preparing a high-strength and high-conductivity powder metallurgy copper-iron alloy from copper-coated iron powder, and belongs to the technical field of electrochemistry and powder metallurgy materials. S2, preparing a copper source solution; s3, mixing and replacing powder and liquid; s4, performing two-stage reduction; s5, powder raw material mixing; s6, pressing and forming the raw materials; s7, sintering and densifying; s8, deformation processing treatment; and S9, high-temperature heat treatment. According to the method for preparing the high-strength and high-conductivity powder metallurgy copper-iron alloy through the copper-coated iron powder, the prepared copper-coated iron composite powder is uniform in coating layer structure and good in compactness, and compared with a replacement copper plating method, a large number of loose copper block heterogeneous distribution does not occur on the surface; and secondly, the prepared copper-iron alloy billet is low in oxygen content, high in sintering density, uniform in component, free of segregation, small in grain size, excellent in processability, few in residual solid solution iron atoms in copper, high in strength and high in conductivity, and has important application prospects in key components in the fields of electronic information, aerospace, electromagnetic shielding and the like.

The invention provides a copper etching solution and application thereof. The copper etching liquid comprises an inorganic acid, hydrogen peroxide, an azole compound, a halogen ion source and an amine compound, wherein the amine compound is selected from a compound shown in a formula 1 or an ammonium salt with a structural fragment shown in a formula 2. When the copper etching solution is applied to etching treatment on a chemical copper plating seed layer by a semi-additive method, the copper etching solution shows excellent differential etching capability, and has no obvious etching on the side wall of electroplating copper and the seed layer at the bottom of a copper circuit on the basis of effectively removing the seed layer between the copper circuits, so that the etching quality of the copper plating seed layer is improved. The undercut phenomenon can be prevented, the line width reduction amount is small, and the reliability degree of micronized line wiring can be obviously improved.

The invention is suitable for the field of metal matrix composite materials, and provides a copper-tungsten boron-containing diamond electric resistance welding electrode and a preparation method thereof, and the electrode material is composed of a copper phase, a tungsten phase and boron-containing diamond powder; the preparation method comprises the following steps: carrying out step-by-step metallization treatment of chemical copper plating and magnetron sputtering nickel on boron-containing diamond powder; the boron-containing diamond powder with the metalized surface and tungsten powder are mixed, subjected to ball milling and then subjected to cold isostatic pressing forming, and a tungsten prefabricated body is obtained; sintering the tungsten preform in a hydrogen or vacuum environment to form a porous tungsten skeleton; and filling pores of the tungsten skeleton through copper infiltration to obtain the copper-tungsten boron-containing diamond electrode material, and finally processing and forming. Through introduction of the conductive boron-containing diamond and a step-by-step metallization process, the contradiction between the conductivity and the wear resistance of a traditional electrode is broken through, meanwhile, the adhesion rate is remarkably reduced, and the method is suitable for welding high-strength steel, plated plates, copper alloys and other easy-adhesion working conditions.

The invention discloses a Kovar alloy electroplating method. The method comprises the steps that a Kovar alloy base material is pretreated; the pretreated kovar alloy base material is immersed in an acidic copper sulfate plating solution for electrolytic copper plating, so that a copper plating layer is formed on the surface of the kovar alloy base material; immersing the kovar alloy on which the copper plating layer is formed into a chemical nickel plating solution so as to form a nickel plating layer on the surface of the copper plating layer; and immersing the kovar alloy base material on which the nickel plating layer is formed into a nanogold seed crystal solution so as to form a soft gold plating layer on the surface of the nickel plating layer. The coating quality of the kovar alloy can be improved.

The invention discloses an FPC high step manufacturing process, which comprises the following steps of: firstly selecting copper plating and then removing a film to carry out whole board copper plating, firstly carrying out local copper electroplating on an area which only needs to be thickened, and covering and protecting a circuit part by a dry film without participating in the copper plating process, so that the copper thickness of a via hole area can be effectively improved on the premise of not excessively increasing the copper thickness of the circuit; after selective plating is completed, copper electroplating is conducted on the whole plate, so that a thin copper layer is evenly plated on the surface of the whole copper foil base material, the step height difference generated during selective copper plating can be effectively reduced, the step gradient can be reduced, and copper surface transition is smoother.

The invention relates to the technical field of wafer packaging, and particularly discloses wafer-level packaging copper interconnection electroplating liquid and a wafer-level packaging interconnection electroplating process. According to the application, the growth of copper at an orifice is inhibited by utilizing the synergistic effect among the components such as the ammonium pyrrolidine dithiocarbamate, the chloride ions, the copper salt and the polyethylene glycol, and the thickness of a copper plating layer on the surface of the cathode is reduced by adding the anthraquinone sulfonate; and the thickness of the plating layer in the center of the through hole is increased through the synergistic effect of anthraquinone sulfonate, the leveling agent, the accelerator, the brightening agent and the inhibitor, so that the through hole can be effectively filled under the high current density, the good deep plating capacity is achieved, and the product quality can be fully improved.

The invention provides a copper plating solution, a metal copper layer comprising the copper plating solution and application of the metal copper layer. The copper plating solution comprises the following components in mass concentration: 80-150 g / L of copper sulfate, 80-150 g / L of sulfuric acid, 60-90 mg / L of chloride ions and 20-80 mg / L of a copper plating additive; the copper plating additive comprises a combination of a brightening agent, a wetting agent and a leveling agent according to the mass ratio of (0.5-1.5): (0.5-2.4): (0.025-4). According to the copper plating additive and the composite current collector prepared from the copper plating liquid containing the additive, copper deposition can be accelerated, the flatness and brightness of plating layers can be improved, meanwhile, the binding force and extensibility between the plating layers can be enhanced, raw materials and products of the additive are free of pollution to the environment, the preparation method is simple, and the preparation cost is low. And the method is also suitable for process production.

The invention discloses an FPC film strain gauge and a manufacturing method thereof. The strain gauge comprises a flexible insulating substrate, a specific-component copper-nickel alloy layer (with 55% of Cu and 45% of Ni and the thickness of 1-5m) sputtered on the flexible insulating substrate, a plurality of independent sensitive grids etched on the alloy layer and arranged along different directions, and a signal lead on the other surface of the substrate, wherein the flexible insulating substrate is connected with the specific-component copper-nickel alloy layer through a via hole with a metalized hole wall. The manufacturing method comprises the steps of drilling, three-step plasma treatment, magnetron sputtering of alloy, electroplating of copper to reinforce the hole wall, double-sided photoetching and etching and the like. Through glue-free sputtering combination and a specific alloy formula, the problems of glue layer aging and temperature drift of a traditional strain gauge are solved, and the product has the advantages of being ultrathin, flexible, high in stability, high in precision and suitable for batch production.

The invention provides a lead frame raw material surface treatment method. The method comprises the following steps: providing a pretreated lead frame raw material; placing the pretreated lead frame raw material in a copper pre-plating solution, applying an ultrasonic field in the copper pre-plating solution, and pre-plating a copper layer on the surface of the lead frame raw material under the action of the ultrasonic field; and performing infrared heating on the discharge end of the lead frame raw material pre-plated with the copper layer to obtain the lead frame raw material with the required surface state. According to the method, a uniform and compact pre-plated copper layer can be formed, the subsequent electroplating effect is improved, and large-scale preparation of the high-performance lead frame is realized.