2154 results about "Copper plating" patented technology

A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line. The second embodiment selectively electrolessly deposits metal 140 over an Adhesion layer 130 composed of Poly Si, Al, or Ti. A photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line. The third embodiment electroless deposits metal over a metal barrier layer that is roughen by chemical mechanical polishing. A solder bump is formed using an electroless deposition of Cu or Ni by: depositing an Al layer 220 and a barrier metal layer 230 over a substrate 10. The barrier layer 230 is polished and activated. Next, the aluminum layer 220 and the barrier metal layer 230 are patterned. A metal layer 240 is electroless deposited. Next a solder bump 250 is formed over the electroless metal layer 240.

Embodiments of the invention provide a method for depositing a copper material on a substrate by an electroless deposition process and also provide a composition of an electroless deposition solution. In one embodiment, the copper material is deposited from an electroless copper solution that contains an additive, such as an inhibitor, to promote a bottom-up fill process. In one aspect, the field of the substrate may be maintained free of copper material or substantially free of copper material during the electroless deposition process. Prior to the electroless deposition process for forming the copper material, a barrier layer may be deposited on the substrate, and thereafter, a ruthenium layer may be deposited thereon. In one example, the copper material is formed during a bottom-up, electroless deposition process directly on the ruthenium layer. Alternatively, a seed layer may be formed on the ruthenium layer prior to depositing the copper material.

A lead frame for a semiconductor device, made of a copper alloy, capable of preventing the creation of delamination between encapsuling resin and attributable to a lead frame without sacrificing the wire bondability and, a process for producing the lead frame and a semiconductor device using the lead frame. According to the present invention, (1) there is provided a lead frame for a plastic molded type semiconductor device, made of a copper alloy material partially plated with at least one noble metal, for wire bonding or die bonding purposes, selected from silver, gold, and palladium, wherein the whole area or a predetermined area of the surface of the copper at least on its side to be contacted with a encapsuling resin has a thin noble metal plating of at least one member selected from silver, gold, platinum, and palladium. (2) A copper strike plating is provided as a primer plating for the partial noble plating, a copper plating is provided on the thin noble metal plating, and the partial noble metal plating is provided on the copper plating in its predetermined area. (3) A die pad for mounting a semiconductor chip is provided, a partial silver plating is provided, and a zinc flash plating and a copper strike plating are provided in that order at least one on the surface of copper in the back surface of the die pad remote from the surface on which the semiconductor chip is mounted.

Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.

Disclosed herein is an electroless copper plating solution, including a copper salt, a completing agent, a reductant and a pH adjuster, in which the plating solution includes a 2,2-dipyridyl acid solution and the hydrogen ion concentration (pH) thereof is about 11.5 to about 13.0, a method of producing the same, and an electroless copper plating method. According to the plating solution of the present invention, an electroless copper plating film having stable and improved adhesivity and low electrical resistance can be obtained. Further, display devices including a metal pattern formed with the electroless copper plating solution can improve the reliability and price competitiveness of products prepared therefrom.

To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species.

A method for plating a second metal directly to a first metal without utilizing a mask. A semiconductor substrate is provided including at least one metal feature and at least one insulating layer covering the metal feature and the substrate. At least one recess is formed in the at least one insulating layer thereby exposing at least a portion of the metal feature. At least one conductive barrier layer is formed over the insulating layer and the exposed portion of the metal feature. A plating seed layer of a first metal is formed over the at least one barrier layer. A photoresist layer is deposited over the plating seed layer. Portions of the photoresist layer and of the plating seed layer outside of the at least one recess are removed. Photoresist remaining in the at least one recess is removed. A second metal is electroplated to the plating seed layer in the recess.

An alkaline non-cyanide plating solution for copper-plating used on iron and steel base and a preparation method thereof relate to a kind of plating solution. The invention provides the alkaline non-cyanide plating solution for copper-plating used on iron and steel base and the preparation method thereof. The plating solution comprises the following components: main salt, complexing agent, conductive salt, activator, cuprous ion complexing agent, pH stabilizer and brightening agent. The method comprises the following steps: adding complexing agent in water, stirring to dissolve complexing agent, obtaining a solution A; adding main salt in the solution A, stirring to dissolve main salt, obtaining a solution B; adding conductive salt in water, stirring to dissolve conductive salt, obtaininga solution C; mixing the solution B and solution C, adjusting the pH value to 2.0-4.5 with sulfuric acid or sodium hydroxide, obtaining a solution D; adding additive in the solution D, adding water toperform constant volume process and obtaining the alkaline non-cyanide plating solution for copper-plating in the desired volume for use, wherein the additive is activator, cuprous ion complexing agent, pH stabilizer and brightening agent.

A multilayer ceramic electronic component includes external terminal electrodes that are formed by depositing metal plating films on exposed portions of internal conductors embedded in a ceramic body, depositing a copper plating films that cover the metal plating films and make contact with the ceramic body around the metal plating films, and heat-treating the ceramic body to generate a copper liquid phase, an oxygen liquid phase, and a copper solid phase between the copper plating films and the ceramic body. The mixed phase including these phases forms a region at which a copper oxide is present in a discontinuous manner inside the copper plating film at least at the interfaces between the ceramic body and the copper plating films. The copper oxide securely attaches the copper plating films to the ceramic body and enhances the bonding force of the external terminal electrodes.

There is provided a copper-plating solution which, when used in plating of a substrate having an seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and ensures complete filling with copper of the fine recesses, and which is so stable that its performance is not lowered after a long-term continuous use thereof. The plating solution contains monovalent or divalent copper ions, a complexing agent, and an organic sulfur compound as an additive, and optionally a surfactant.

The invention discloses a method for conducting surface chemical copper plating on inorganic particles through dopamine. The method comprises the steps that poly-dopamine layers are made to subside on the surfaces of the inorganic particles in an alkaline solution through the oxidative polymerization effect of the dopamine, then by utilizing functional groups of the poly-dopamine layers, and meanwhile under the effect of an additional auxiliary reducing agent of dimethylamine broane (DMAB), copper ions are reduced to pure copper on the surfaces of the inorganic particles, and a continuous and compact metal copper layer is formed. The method is simple to operate, low in equipment requirement and low in cost; the prepared copper-plated inorganic particles have the characteristics of being low in density, good in conductivity and the like; the method can be used for preparing electricity and thermal conductive coatings, electromagnetic shielding paint, wave-absorbing materials and the like.

The invention relates to a wire saw for cutting hard and fragile materials and a manufacturing method thereof. The wire saw is fixed with an grinding material on a core wire through a bonding agent and is characterized in that the bonding agent consists of an inner layer UV resin bonding agent and an outer layer heat reactive resin bonding agent; and the grinding material is evenly and continuously distributed in a monolayer mode around the core wire, partial grinding material is embedded in the UV resin bonding agent, other partial grinding material is exposed outside the heat reactive resin bonding agent to form an exit lip, and the rest part is enwrapped by the outer layer heat reactive resin. The grinding material adopts a diamond or CBN adopting surface metal plating; and the core wire adopts a copperized music wire. The manufacturing method is performed continuously and quickly according to the following steps: under the traction of a driving device, setting out the core wire continuously through a wire plate, surface preparation, cleaning, drying, coating with the inner layer UV resin bonding agent, grinding material cementation, UV curing, coating with the outer layer heat reactive resin bonding agent, thermocuring and drawing in a cable to form a plate. The wire saw and the method solve the problem of driving aspects before cured resin is completely cured, and can effectively solve the problem that the grinding material in the prior art is easy to agglomerate.

The present invention provides a copper plating solution for embedding fine wiring, wherein it contains copper sulfate at 100 to 300 g/L as copper sulfate pentahydrate, sulfuric acid at 5 to 300 g/L, chlorine at 20 to 200 mg/L, a macromolecular surfactant at 0.05 to 20 g/L for controlling the electrodeposition reaction, sulfur-based saturated organic compound at 1 to 100 mg/L for accelerating the electrodeposition reaction, leveling agent composed of a macromolecular amine compound at 0.01 to 10 mg/L and reductant at 0.025 to 25 g/L for stabilizing the copper plating solution. The copper plating solution of the present invention for embedding fine wiring can plate the wafer surface provided with fine wiring patterns with sub-micron order gaps in-between and coated with copper serving as the metallic seed film, to fill the gaps neither leaving any defect therein nor dissolving the metallic seed film.

Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on a substrate to a thickness of less than 15 nanometers (nm). A number of via holes is defined above the seed layer. A layer of copper is deposited over the seed layer using electroless plating to fill the via holes to a top surface of the patterned photoresist layer. The method can be repeated any number of times, forming second, third and fourth layers of copper. The photoresist layers along with the seed layers in other regions can then be removed, such as by oxygen plasma etching, such that a chemical mechanical planarization process is avoided.

Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.

Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.

A process of electrodepositing high purity copper in a via in a silicon substrate to form a through-silicon-via (TSV), including immersing the silicon substrate into an electrolytic bath in an electrolytic copper plating system in which the electrolytic bath includes an acid, a source of copper ions, a source of ferrous and/or ferric ions, and at least one additive for controlling physical-mechanical properties of deposited copper; and applying an electrical voltage for a time sufficient to electrodeposit high purity copper to form a TSV, in which a Fe⁺²/Fe⁺³ redox system is established in the bath to provide additional copper ions to be electrodeposited by dissolving copper ions from a source of copper metal.

The invention discloses a lithium battery with novel current collectors and a preparation method of the lithium battery with the novel current collectors. The lithium battery comprises a positive pole piece, a diaphragm and a negative pole piece. The positive pole piece comprises a novel positive pole current collector in a multi-layer structure, the positive pole current collector comprises a first plastic film, and each of upper and lower surfaces of the first plastic film is coated with a first adhesion reinforcement layer, an aluminum metal plating layer and a first antioxidant layer sequentially. The negative pole piece comprises a novel negative pole current collector in a multi-layer structure, the negative pole current collector comprises a second plastic film, and each of upper and lower surfaces of the second plastic film is coated with a second adhesion reinforcement layer, a copper metal plating layer and a second antioxidant layer sequentially. The preparation method includes: laminating the positive pole piece, the diaphragm and the negative pole piece, packaging through aluminum-plastic films, injecting an appropriate amount of electrolyte, and subjecting the aluminum-plastic films to hot-press packaging. The lithium battery has advantages that light weight, energy density improvement and cost reduction of the battery can be realized, and copper/aluminum plating layers are less prone to shedding and oxidization.

The invention provides a preparation method and application of a super-hydrophobic/super-lipophilic material in oil-water separation field, involving the preparation method and application of an oil/water separation material. In the invention, the technical problems that the existing oil-water separation materials have low organic matter adsorption efficiency and high cost can be solved. The preparation method comprises the following steps of: treating a substrate with a roughening liquid, sensitizing liquid and an activating liquid in a proper order, then plating copper or zinc on the surface of the substrate, then immersing the substrate with the metal coating in an etching liquid for treatment to obtain the substrate with the rough metal layer on the surface, finally soaking the substrate in an organic solution of a fatty acid or a thiol and drying to obtain the super-hydrophobic/super-lipophilic material. The obtained super-hydrophobic/super-lipophilic material can be applied in oil-water separation, can absorb 1-40 g of organic matters per gram of the material, can be recycled repeatedly and can be used to control and treat oil pollution.

The invention provides a soft material and the preparation method and use, which precede ion plating or magnetic control sputtering metal plating to the soft material, then precede vacuum metal steaming plating, the produced soft material product has good adhering capability, the resistance value is between 0.03 to 103 Omega, can ensure the vertical electricity conduction to the air permeability textile fabric. Or precede ion plating or magnetic control sputtering metal plating to the soft material, then proceed copper plating, and proceed vacuum steaming plating metal then. The resistance of the produced soft electricity conduction is between 0.005 to 0.03 Omega, the adhesive force is good, the erosion performance is better, the material shielding performance is larger than 70bB. The soft material can be used print the base material of circuit board , shielding clothes and various packaging material.

The invention discloses a process for producing circuit board metallized semi-holes, which comprises the following steps: A) carrying out board cutting on a circuit board substrate, attaching a sensitive dry film on the surface of the substrate, and carrying out copper plating and tinplating on circuits according to a circuit board positive process; B) completing the exposure of the inner-layer circuits; C) carrying out press-fitting on the obtained board so as to obtain a laminated board; D) carrying out PTH (plated though hole) plating on the whole laminated board, and carrying out outer pattern transfer and pattern plating on the laminated board subjected to PTH plating; E) producing semi-holes; F) carrying out AOI detection on the outer-layer circuits, detecting the defects such as open/short circuits, and the like in the outer layer, and then modifying the defects; G) carrying out welding resistance on the obtained product; H) carrying out immersion nickel/gold on the whole board; and I) testing and checking the electrical properties and appearances of the finished board so as to obtain the finished product. The process of the invention is adjusted from the production flow, without drilling for deburring, thereby not only simplifying the production processes of traditional semi-hole boards, but also completely solving the problem of copper burrs in the semi-holes; the forming effect of the semi-hole is good; and the process of the invention has wide market application prospect.

The invention relates to the technical field of PCB (printed circuit board) plating, in particular to a copper plating solution for PCB through holes and PCB blind holes, and a preparation method and a plating method of the copper plating solution. Each liter of the copper plating solution comprises the following components according to contents: 100-250g of copper sulfate pentahydrate, 100-200g of sulfuric acid, 30-100ppm of chlorine ions, 5-50g of brightener, 3-30g of carrier, 2-20g of leveling agent and the balance of deionized water, wherein the concentration ratio of the copper sulfate pentahydrate to the sulfuric acid is (1-1.25) : 1. The plating method comprises the following steps: putting a PCB with through holes and blind holes into a plating bath with the copper plating solution; plating during air agitation to obtain a copper plating layer. The copper plating layer formed by the plating method has a good deep plating capability as high as 92% above, has a hole-filling rate as high as 96% above, and is dense, smooth, relatively good in malleability, good in gloss, high in toughness and low in internal stress.

A method for efficient production of a welding solid wire free of copper plating. The method consists of drawing by means of roller dies with the help of a dry solid lubricant for drawing which is at least either of sodium stearate or potassium stearate, removing the lubricant from the wire surface by means of a washing device, and applying a lubricant for wire feeding to the surface of the drawn wire by means of an oiling device. High-speed drawing by means of roller dies makes a stock wire into a welding solid wire having the diameter of the finished wire or nearly finished wire. The drawing step is followed by the washing step and the lubricant applying step, which are all accomplished in-line.

The present invention discloses new activating process and activating solution with non-noble metal for chemical plating of metal onto the surface of non-metal base material. The activating solution is alkaline organic metal complex solution comprising water soluble salt of bivalent Ni, Cu or Co ion, organic alkane complexing agent and pH regulator. The new activating process and activating solution of the present invention may be used to replace available process and solution with noble metal for wide use in the chemical plating of metal material onto the surface of non-metal base material, such as chemically plating nickel, chemically plating copper, chemically plating cobalt, etc. The activating solution of the present invention is stable, simple in technological process and low in cost, and the present invention makes it possible to save noble metal resource effectively and is ideal technology to replace available one.

The concentration of a reducing agent in an electroless bath for plating a first metal is determined from the effect of the reducing agent on the electrodeposition rate of a second metal. For electroless cobalt and nickel baths, a sample of the electroless plating bath is added to an acid copper plating solution and the copper electrodeposition rate is measured by cyclic voltammetric stripping (CVS) analysis. Separate analyses for hypophosphite and dimethylamineborane in baths employing both reducing agents are attained via selective decomposition of the dimethylamineborane in acidic solution.

The invention discloses a method for manufacturing a gravure roller by an electronic engraving method. The method comprises the following steps: firstly, manufacturing a printing plate substrate and plating copper on a printing plate roller, and forming a plate making copper layer on the surface of the printing plate roller; secondly, plating a chrome layer on the plate making copper layer, and engraving; thirdly, eroding an engraved V-shaped ink cell, so as to deepen and widen the plate making copper layer corresponding to the V-shaped ink cell and enlarge the volume of the ink cell; and fourthly, removing chrome from the eroded printing plate roller; and lastly plating the chrome layer functioning as protection. Compared with the prior art, the gravure roller manufactured by the method has the ink cell with larger volume and larger ink capacity, has good color saturation of printed matters when transfer printing, and has higher printing quality.

Apparatus and methods are provided for wafer translators having a silicon core, an isolating conductive ground plane, and copper and subjacent resin layers disposed on the ground plane. A silicon substrate having at least one major surface coated with an electrically conductive layer is subjected to a number of printed circuit board manufacturing operations including, but not limited to, application of resin-coated copper foils; mechanical grinding of copper layers; mechanical drilling of via openings in a dielectric material; plating of copper, nickel, and gold layers; laser removal of metal; and chemical removal of metal; in order to produce a wafer translator having a silicon core. In further aspects of the present invention, alignment marks are formed and contact structures, such as stud bumps, are placed relative to a local set of alignment marks.

The invention provides chemical copper-plating solution. The chemical copper-plating solution is the aqueous solution containing copper salt, N-methylmorpholine, formaldehyde, complexing agent, stabilizer and pH regulator and the pH value of the chemical copper-plating solution is 12-13. The invention also provides a chemical copper-plating method. The method comprises the following steps: directly contacting a part to perform chemical copper plating with the chemical copper-plating solution, cleaning and drying to obtain the plated part. By adopting the chemical copper-plating solution, the stability of the copper-plating solution can be greatly increased and the plating speed can be increased. By adopting the chemical copper-plating method provided by the invention to plate copper on the part to be plated, the yield of the copper-plating product can be increased largely and the work efficiency of chemical plating can be increased, thus the method is good for industrialized mass production.

The invention discloses a negative electrode current collector and a fabrication method and application thereof. The negative electrode current collector has a multi-layer structure and comprises a plastic thin film, wherein an adhesive strength improvement layer, a copper metal plating layer and an oxidization-prevention layer are sequentially plated on an upper surface and a lower surface of the plastic thin film. The fabrication method comprises the steps of sequentially plating the adhesive strength improvement layer on the plastic thin film by a magnetron sputtering coating process, plating copper by an evaporation coating process, and plating the oxidization-prevention layer by an electron beam evaporation or magnetron sputtering coating process. The negative electrode current collector is mainly applied to a lithium ion battery. By the negative electrode current collector, the lightness of the battery can be achieved, the energy density is improved, the cost is reduced, and the copper plating layer cannot be liable to fall off and is not liable to oxidize.

A sheet-shaped capacitor for storing electrical charges of large capacities, and to assure facilitated manufacture, cost reduction and improved reliability, and a method for manufacturing the capacitor. The capacitor includes a dielectric film 12, formed on a first major surface of a metal plate 11, an electrically conductive high polymer layer 13, formed on a first major surface of the dielectric film, and an electrically conductive layer 14 formed on a first major surface of the electrically conductive high polymer layer 13, such as by copper plating. A cathode electrode 20 is led out from the electrically conductive layer 14 on the side electrically conductive high polymer layer 13.