29 results about "Resist" patented technology

The present invention provides a display device and a method for manufacturing the display device. A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.

The present invention provides a method for removing edge beads on a wafer associated with a resist coating containing a metal-containing resist composition. [Solution] In a corresponding apparatus for processing a wafer, the method comprises the step of spin-coating a wafer 150 with a metal-based resist composition 158, and then applying a first bead edge rinse solution along the wafer edge. The edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or in addition, the method comprises the step of applying a protective composition 154 to the wafer 150 before performing the edge bead rinse. The protective composition is a sacrificial material or an anti-adhesion material and is applied only to the wafer edge, or, in the case of a protective composition, over the entire wafer.

This invention relates to an etching method. The etching method of this invention includes: a resist pattern forming step, in which a resist pattern is formed on a workpiece by a resist layer made of resin; an etching step, in which the workpiece is etched through the resist layer having the resist pattern; and a resist protective film forming step, in which a resist protective film is formed on the resist layer. The etching step is repeated multiple times. After the etching step is repeated multiple times, the resist protective film forming step is performed.

To form a resist pattern having good CD uniformity (CDU).SOLUTION: An acid generator contains a salt represented by formula (I).SELECTED DRAWING: None

To provide a compound, a resin, and a resist composition which allow a resist pattern having a good pattern collapse margin to be produced.SOLUTION: The resist composition contains a compound represented by formula (I) or a resin containing a structural unit represented by formula (IP).SELECTED DRAWING: None

Manufacture resist patterns with good CD uniformity (CDU). [Solution] An acid generator containing a salt represented by formula (I). JPEG2026136094000191.jpg38170

The present application relates to a resist composition, a laminate, and a pattern forming method. The present application provides a resist composition which is excellent in sensitivity, resolution, and LWR, and is also easy to stably handle in optical lithography using a high-energy ray, a laminate including a resist film obtained from the resist composition, and a pattern forming method using the aforementioned resist composition. The means for solving the problem is a resist composition characterized by comprising a metal complex represented by the following general formula (1) and a solvent.[Chemical Formula 1]

A method for manufacturing a wiring board includes, in the stated order: a step of forming a resist layer 3 on a metal layer 20 provided on a support 1; a step of forming a pattern, including an opening 3A through which the metal layer 20 is exposed, on the resist layer 3 by exposure and development of the resist layer 3; a step of forming a copper plating layer 21 on the metal layer 20 exposed within the opening 3A by electrolytic plating; a step of removing the resist layer 3; a step of filling at least a part of an opening void 21A opening at a surface of the copper plating layer 21; and a step of removing an exposed part of the metal layer 20 by etching.

The present invention employs a resist composition that generates an acid through exposure to light to undergo a change in solubility with respect to a developer by means of the action of the acid, and that contains a compound represented by formula (d0) and a base material component that undergoes a change in solubility with respect to a developer by means of the action of an acid. In formula (d0), Rd1 represents an alkyl group. k represents an integer of 2 or more. h represents an integer of 0 or more. Rd0 represents a substituent. j represents an integer of 0 or more. Here, 5+2h≥j+k is satisfied. If h is 0, k represents an integer of 2-5, and, if h represents an integer of 1 or more, k is 2 or 3. m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation. With the resist composition, high sensitivity can be achieved and lithographic properties such as resolution and dimensional uniformity can be enhanced when forming a resist pattern.

There is a need for technology that can manufacture resist patterns with good CD uniformity (CDU). [Solution] A resist composition containing a carboxylate salt represented by formula (I). JPEG2026093365000205.jpg23170

The present invention provides a deposition mask manufactured in combination of an etching method and a plating method, a manufacturing method thereof, and a deposition mask assembly including the same. The deposition mask manufacturing method includes the steps of forming a resist on a first surface and a second surface of a metal plate, leaving a plurality of first resist patterns on the second surface, forming a plating layer on a remaining portion except for the portion where the first resist patterns are left, leaving a plurality of second resist patterns on the first surface, etching a remaining portion except for the portion where the second resist patterns are left, and peeling off the first resist patterns and the second resist patterns.

To provide a resist composition and a method for forming a resist pattern, capable of forming a resist pattern that simultaneously achieves resolution enabling reproduction of a fine-dimension pattern, good sensitivity, and good CDU.SOLUTION: A resist composition generates an acid upon exposure and exhibits a change in solubility in a developing solution by the action of the acid, the resist composition comprising a base material component (A1) that exhibits a change in solubility in the developing solution by the action of the acid and an acid generator component (B) that generates an acid upon exposure, wherein the acid generator component (B) includes a compound represented by general formula (b-1) described in the specification.SELECTED DRAWING: None

To provide a resist composition capable of forming a resist pattern with sufficient resolution and exposure margin, a method for producing a resist pattern using the resist composition and a method for producing a plated article.SOLUTION: Provided is a resist composition containing a resin (A1) having acid-labile structural units, a photosensitizer (I), and a photoacid generator (B), wherein the photoacid generator (B) includes a compound whose maximum molar absorption coefficient in the wavelength range of 355 to 375 nm is 6000 (L / (mol cm)) or less, wherein the content of the photosensitizer (I) is 10% by mass or less based on the solid content of the resist composition, and when a film is formed using the resist composition at a use thickness, the minimum transmittance of radiation in the wavelength range of 355 to 375 nm in the film is 23% or more. Provided are a method for producing a resist pattern, and a method for producing a plated structure.SELECTED DRAWING: None

The resist composition comprises a metal complex containing a metal, typically zinc and a specific ligand exhibits a high sensitivity, high resolution and improved LWR when processed by photolithography. The composition is stable during storage and easy to handle. The resist composition comprises a metal complex containing a metal atom and a ligand having the formula (1a), (1b) or (1c). R1, R2, R3, R4, R5, R6 and R7 are each independently hydrogen, a C2-C20 hydrocarbylcarbonyl group which may contain a heteroatom, or C1-C20 hydrocarbyl group which may contain a heteroatom, *1 and *2 each designate a point of attachment to the metal atom.

To produce a resist pattern with good CD uniformity (CDU).SOLUTION: The acid generator contains a salt represented by formula (I).SELECTED DRAWING: None

A method for manufacturing a master mold for imprinting, with which structures formed in a desired forward taper can be formed on a base material. This method comprises a coating step in which a resist having a predetermined film thickness is coated on a base material, an exposure step in which the resist coated on the base material is exposed through a mas, and a development step in which the exposed resist is developed, the exposure step involving setting the exposure amount to be equal to or less than twice the minimum exposure amount (Df) at which the resist coated on the base material undergoes solarization across the entire thickness of the resist, and exposing predetermined portions of the resist, so that the side surface shape of the structure constituted of the resist formed by development in the development step is a forward taper.

A resist composition which generates an acid by exposure and whose solubility to a developer is changed by the action of the acid, contains: a base material component (A) whose solubility to a developer is changed by the action of the acid; and an ionic liquid (Z), the solid content concentration of the resist composition being 25 mass% or more.

To provide: a resist composition which enables enhancement of lithography characteristics such as uniformity of pattern dimensions in the formation of a resist pattern, and improvement of etching resistance of a resist film; and a compound useful as an acid diffusion control agent.SOLUTION: The present invention employs a resist composition which generates an acid by means of light exposure and of which the solubility in a developer solution is changed by the action of the acid, the resist composition containing: a base material component of which the solubility in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0). In general formula (d0): RCy is a cyclic group containing a benzene ring, or an alicyclic group; Y01 is a divalent linking group or a single bond; k is an integer equal to or greater than 1; Rd0 is a substituent other than -Y01-CN; j is an integer equal to or greater than 0; Y02 is a divalent linking group or a single bond; m is an integer equal to or greater than 1; and Mm+ represents a counter cation having a valence of m.SELECTED DRAWING: None

A static mechanical simulation determines stress and deformation in a resist after development. The mechanical simulation takes patterned exposure data and post-exposure bake data as inputs to determine differential initial strain and stress in the resist. The initial strain is related to blanket volume loss that occurs in the resist as a result of exposure and post-exposure bake. Using the initial strain, film property, and geometry layout as inputs, the mechanical simulation determines or even quantifies a final stress and deformation in the resist after development. The final stress and deformation in the resist can be correlated to defect instances. Various strategies, including bulk mask optimization, pre-exposure operations, and enhanced optical proximity correction (OPC) that utilize the mechanical simulation learning, can be applied to reduce the initial strain or stress in the resist and thereby reduce defectivity after development.

The invention relates to a resist composition and a pattern forming method. The present invention addresses the problem of providing: a resist composition which has excellent sensitivity, resolution, and LWR in optical lithography using high-energy rays, is stable, and is easy to handle; and a method for forming a pattern using the resist composition. The resist composition contains a metal complex having a metal atom and a ligand represented by the following formula (1a), (1b) or (1c). In the formula, R1, R2, R3, R4, R5, R6 and R7 are each independently a hydrogen atom, a carbonyl group, or a C1-20 hydrocarbon group which may contain a heteroatom. And * 1 and * 2 represent atomic bonds with metal atoms.

This invention discloses a method for manufacturing an insert using a sealing resin. In this method, a resist layer (20) is formed on a support substrate (10), and another resist layer (30) is formed on the resist layer (20). A mask M with an exposure pattern is placed above the resist layer (30), and both the resist layer (20) and the resist layer (30) are exposed together. The exposed resist layer (20) and the resist layer (30) are developed together to obtain an opening pattern P. A metal pillar (40) is formed on the opening pattern P using a metal plating solution. In this method, the diameter or width (R2) of the opening (31) formed on the outer resist layer (30) is larger than the diameter or width (R1) of the opening (21) formed on the inner resist layer (20). As a result, the metal plating solution can easily penetrate from the opening (31) toward the opening (21), and a metal pillar (40) of sufficient height can be formed.

To provide a resist composition which achieves higher sensitivity and enhances lithographic characteristics such as resolution and dimensional uniformity in resist pattern formation, and to provide a compound useful as an acid diffusion control agent.SOLUTION: The resist composition generates an acid upon exposure, changes its solubility in a developer by the action of an acid, and contains: a base component which changes its solubility in a developer by the action of an acid; and a compound represented by formula (d0). In the formula (d0), Rd1 represents an alkyl group; k represents an integer of 2 or more; h represents an integer of 0 or more; Rd0 represents a substituent; and j represents an integer of 0 or more, provided that 5+2h≥j+k, k is an integer of 2 to 5 when h is 0, and k is 2 or 3 when h is an integer of 1 or more, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.SELECTED DRAWING: None

The invention provides a negative resist composition capable of forming a resist pattern with good storage stability and a method for manufacturing the resist pattern. This negative resist composition contains a resin (A1), an acid generator (B), and a cross-linking agent (E), the resin (A1) containing a structural unit represented by formula (a2-1) and a structural unit represented by formula (a2-4), the acid generator (B) containing at least two acid generators having a group represented by formula (B1), at least one of which is a compound represented by formula (b1). [In the formulae (a2-1) and (a2-4), Ra7 and Ra13, Ra10 and Ra14, and Ra15 each represents a specific group. And m1, m2, m3, and m4 represent specific integers. In formula (B1), Rb1 represents a specific group. In formula (b1), Rb1, Rb2, and ring Wb1 represent specific groups. And x represents a specific integer. ].

To provide a resist composition excellent in resolution and capable of producing a resist pattern having a good shape and resistance to cracking.SOLUTION: And a structural unit represented by the formula (a2), wherein the structural unit represented by the formula (a1) includes a structural unit represented by the formula (a1) and a structural unit represented by the formula (a2), and the structural unit represented by the formula (a1) does not include a structural unit represented by the formula (a2) and a structural unit represented by the formula (a1), and the structural unit represented by the formula (b1) does not include a structural unit represented by the formula (LA).SELECTED DRAWING: None

The present invention provides a production method for producing an evaporation mask with high evaporation efficiency in a simple manner. The production method for producing an evaporation mask includes a step of forming a first plating layer using a resist pattern as a mask; a step of deforming the resist pattern; and a step of forming a second plating layer on the first plating layer using the deformed resist pattern as a mask. By deforming the resist pattern, the deformed resist pattern can be overlapped with a part of the first plating layer.

To provide a compound, an acid generator, a resist composition, and a method for forming a resist pattern, capable of forming a resist pattern that simultaneously achieves resolution enabling reproduction of a fine-dimension pattern, a good resist pattern shape, and an excellent DOF margin.SOLUTION: A resist composition generates an acid upon exposure and exhibits a change in solubility in a developing solution by the action of the acid, the resist composition comprising a base material component (A1) that exhibits a change in solubility in the developing solution by the action of the acid and an acid generator component (B) that generates an acid upon exposure, wherein the acid generator component (B) includes a compound represented by general formula (b-1) described in the specification.SELECTED DRAWING: None

To improve yield in manufacturing of a wiring board.SOLUTION: A manufacturing method of a wiring board according to an embodiment includes steps of: preparing a glass substrate having one or a plurality of product areas; and forming a build-up portion by laminating a conductor layer 12 and an insulating layer 11 over the product areas. The thickness of the glass substrate is 0.5 mm or more and 2.0 mm or less, and includes alternately laminating three or more conductor layers 12 and three or more insulating layers 11. The shape of each product area is rectangular in which a dimension of each side is 80 mm or more and 240 mm or less, and laminating the conductor layer 12 includes forming a resist layer having a resist pattern, forming a minimum value of the width of the wiring included in a conductor pattern to 2 μm or less, and forming a minimum value of an interval of a wiring to 2 μm or less, and forming a resist layer includes exposing the resist layer by a direct imaging exposure.SELECTED DRAWING: Figure 3J

The invention relates to a resist composition and a pattern forming method. The present invention addresses the problem of providing: a resist composition which has excellent sensitivity, resolution, and LWR in optical lithography using high-energy rays, is stable, and is easy to handle; and a method for forming a pattern using the resist composition. The resist composition contains a metal complex composed of a metal atom and a ligand having three or more coordinating functional groups.

The present invention employs a resist composition which generates an acid by means of light exposure and of which the solubility in a developer solution is changed by the action of the acid, the resist composition containing: a base material component of which the solubility in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0). In general formula (d0), RCy is a cyclic group containing a benzene ring, or an alicyclic group. Y01 is a divalent linking group or a single bond. k is an integer equal to or greater than 1. Rd0 is a substituent other than -Y01-CN. j is an integer equal to or greater than 0. Y02 is a divalent linking group or a single bond. m is an integer equal to or greater than 1, and Mm+ represents a counter cation having a valence of m. This resist composition enables enhancement of lithography characteristics such as uniformity of pattern dimensions in the formation of a resist pattern, and improvement of etching resistance of a resist film.