191results about "Radiation applications" patented technology

An infusion system may include a radioisotope generator that generates a radioactive eluate via elution, a beta detector, a gamma detector, and a controller. The beta detector and the gamma detector may be positioned to measure beta emissions and gamma emissions, respectively, emitted from the radioactive eluate. In some examples, the controller is configured to calibrate the infusion system using the gamma detector. For example, the controller may generate a radioactive eluate and measure the activity of the radioactive eluate using both the beta detector and the gamma detector. The high accuracy of the activity measured by the gamma detector may be used to calibrate the infusion system. In subsequent use, the infusion system calibrated using the gamma detector may adjust measurements made to monitor and / or control patient infusion procedures.

To provide a semiconductor photoresist composition that exhibits excellent sensitivity and improved stability, as well as a method of forming patterns using the same.SOLUTION: The present invention provides a semiconductor photoresist composition that includes an organometallic compound represented by Chemical Formula 1 and a solvent, as well as a method of forming patterns using the same. The details of Chemical Formula 1 are as described in the specification.SELECTED DRAWING: Figure 5

The present application relates to a patterning material, a patterning composition, and a pattern forming method. The patterning material of the present application includes a metal-oxygen cluster framework, a radiation-sensitive organic ligand, and a second ligand. The radiation-sensitive organic ligand is coordinated to a metal M through a coordination atom. The coordination atom is at least one of an oxygen atom, a sulfur atom, a selenium atom, a nitrogen atom, and a phosphorus atom. The radiation-sensitive organic ligand is a monodentate ligand or a polydentate ligand having two or more dentates. The second ligand is an inorganic ion or a coordination group.

The present invention relates to PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PATTERNS USING A PHOTORESIST COMPOSITION. Disclosed is a photoresist composition including an organometallic compound including a ring including a metal, a first heteroatom coordinated to the metal, and a second heteroatom covalently bonded to the metal, and an aromatic ring substituted or fused to the ring; and a solvent.

To provide a resist underlayer that does not cause resist pattern collapse even in a fine patterning process and has improved sensitivity to an exposure light source, thereby improving patterning performance and energy efficiency.SOLUTION: The present invention provides a composition for a resist underlayer film comprising a polymer containing a specific structural unit and a solvent, and a pattern forming method using the composition for a resist underlayer film.SELECTED DRAWING: Figure 1

A photoresist stripper composition according to one or more embodiments includes an amine compound, a cyclic alcohol, a protic polar organic solvent, an aprotic polar organic solvent, and a polyhydric alcohol having 4 to 6 carbon atoms. The amine compound in the photoresist stripper composition may have a molecular weight of about 80 g / mol or less, and a HSPo value according to Equation 1 of about 27 to about 32. The photoresist stripper composition according to one or more embodiments may be utilized in a process of removing a photoresist pattern formed on a lower film, and may supply an excellent or suitable strip ability for photoresist and characteristics of preventing or reducing damage of the lower film.

To provide a composition for semiconductor photoresist with superior sensitivity properties.SOLUTION: A composition for semiconductor photoresist contains an organic metal compound, a vinyl group-containing acid compound and a solvent.SELECTED DRAWING: Figure 5

Disclosed is a calibrator device designed to measure the activity of a radio element, including: an ionization chamber, intended to receive the radio element; and electronic / computer system for controlling the operation of the calibrator device. The electronic / computer system includes voice control, which include: at least one microphone capable of capturing a voice instruction emitted by the operator; a recognition module designed to convert the voice instruction into a request that can be executed by the electronic / computer system; and a control module designed to control the execution of the request by the electronic / computer system.

To provide a positive-type photosensitive resin composition which has high i-ray permeability and can provide a resist film having excellent developability and heat resistance.SOLUTION: A positive-type photosensitive resin composition comprises the following components, (A) to (C): (A) a novolac-type phenol resin, comprising a phenolic structural unit (a1) derived from m-cresol and / or o-cresol and an aldehyde structural unit (a2) derived from salicylaldehyde (however, not containing an aldehyde structural unit derived from formaldehyde) and having an acetal group-based protective group; (B) a photo-acid generator; and (C) a solvent.SELECTED DRAWING: None

To provide: a composition for forming a resist underlayer film which enables formation of a desired resist pattern; a method for producing a resist pattern using the resist underlayer film-forming composition; and a method for producing a semiconductor device.SOLUTION: A resist underlayer film-forming composition comprises a polymer and a solvent, where the polymer contains a structure at a terminal, the structure being represented by the following formula (300) (in formula (300), Ar represents a C6-40 aryl group which may be substituted; L3 represents a single bond, an ester bond, or an ether bond; T3 represents a single bond, a C1-10 alkylene group which may be substituted or a C2-10 alkenylene group which may be substituted; n R3's each independently represent a univalent organic group; n represents an integer of 0-5; * represents a bonding part with a polymer residue; and there is contained at least one cyano group in formula (300)).SELECTED DRAWING: None

To provide a resist composition and a pattern forming method using the resist composition.SOLUTION: There are provided: a resist composition containing a first organometallic compound of a specific structure and a second organometallic compound of a specific structure different from the first organometallic compound; and a pattern production method using the resist composition.SELECTED DRAWING: Figure 1

The present invention concerns an apparatus for irradiating goods with a radiation (11x) selected from X-rays or electron beam, comprising • a source (11) of radiation (11x) configured for emitting the radiation (11x) along an irradiation volume (Xv) centred on an irradiation axis (X), • a conveyor (3) configured for driving the goods loaded in two or more transport units (1.i) of unit height (h1i) measured along a vertical axis (Z) through the irradiation volume such as to expose a first portion of the goods to the radiation, wherein, the transport units (1.i) are loaded in totes (5) of tote height, and wherein the conveyor (3) is configured for driving the totes (5) carrying N transport units (1.i) loaded with the goods, such that a tote (5) holds N transport units, with N∈N and N ≥ 1, arranged on top of one another extending over a total height (ht) and wherein, each transport unit (1.i) is held in place in a tote (5) by one or more support elements (5s), such that ∘ The total height (ht) is comprised between 40% and 100% of the tote height (h5) (i.e., 40% h5 ≤ ht ≤ h5), ∘ The N transport units (1.1-1.N) loaded in a tote span over at least 70%, preferably at least 80% of the total height (ht) (i.e., ∑i=1Nh1.i≥70%ht), ∘ The total height (ht) is centred relative to the tote height (h5) within ±20% (i.e., (Ht1 - ½ ht) = ½ h5 ± 20%)..

Provided are a resist composition and a pattern formation method using the same. The resist composition may include an organometallic compound represented by one of Formulae 1-1 to 1-4, and an additive represented by Formula 2:wherein M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2 are described in the specification.

Provided are a resist composition and a pattern forming method using the same. The resist composition includes a first organometallic compound represented by one of Formulae 1-1 to 1-4 and a second organometallic compound represented by Formula 2: wherein M11, M21, L11 to L14, L21 to L24, a11 to a14, a21 to a24, R11 to R14, R21 to R24, b11 to b14, b21 to b24, Y11 to Y13, and X11 to X13 in Formulae 1-1 to 1-4 and 2 are as described in the specification. # imgabs 0 # formula 2 # imgabs 1 #

To provide a composition for forming a resist underlayer film capable of forming a desired resist pattern, a resist pattern production method using the resist underlayer film forming composition and a method for manufacturing a semiconductor device.SOLUTION: There is provided a resist underlayer film forming composition which comprises a polymer represented by the following formula (P1): (in the formula (P1), A1, A2, A3, A4, A5 and A6 each independently represent a hydrogen atom, a methyl group or an ethyl group, Q1 represents a divalent organic group, T2 and T3 each independently represent a single bond, an ester bond or an ether bond, L2 and L3 each independently represent a single bond, an alkylene group having a carbon number of 1 to 10 which may be substituted or an alkenylene group having a carbon number of 2 to 10 which may be substituted, U represents a nitro group, D represents an aromatic ring or a heterocyclic ring having a carbon number of 6 to 40, n represents an integer of 0 to 3.) and a solvent.SELECTED DRAWING: None

A resist topcoat composition and a method of forming a pattern using the composition are provided. The resist topcoat composition includes: a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2; at least one acidic compound selected from the group consisting of sulfonic acid compounds containing at least one fluorine, sulfimide compounds containing at least one fluorine, and carboxylic acid compounds containing at least one fluorine; and a solvent.

To provide simple method of manufacturing a material activation member capable of reducing friction resistance.SOLUTION: A method of manufacturing a material activation member for reducing friction resistance is provided, the method comprising: a material activation material forming step of forming a fluidic material activation material by mixing and agitating powder of a natural mineral containing a radioactive substance, powder of an electron-generating material that generates electrons when subjected to alpha rays emitted from the natural mineral, and a fluid binder; and a material activation member filling step of filling a cylindrical magnet having an N-pole at one end and an S-pole on the other end with the material activation material. The powder of the electron-generating material comprises titanium dioxide powder, magnesium metal powder, silicon metal powder, black silica powder, lanthanum hexaboride powder, and copper powder.SELECTED DRAWING: None

To provide an electron-generating material and electron-generating member, which can reduce a friction coefficient.SOLUTION: An electron-generating material capable of reducing a friction coefficient is provided, the material comprising powder of a natural mineral containing a radioactive substance and powder of an electron-generating material that generates electrons when subjected to alpha rays emitted from the natural mineral, where the powder of the electron-generating material comprises titanium dioxide powder, lanthanum hexaboride, and silicon metal.SELECTED DRAWING: None

A novel composition for forming a resist underlayer film contains: a polymer (X) which includes structural units the same as or different from each other and having a hydroxymethyl group and a ROCH2— group (R being a monovalent organic group, or a mixture of these), and a linking group linking the aforementioned structural units; and a solvent.

To provide a composition for the production of a resist underlayer that does not cause resist pattern collapse even in a fine patterning process and has improved sensitivity to an exposure light source, thereby improving patterning performance and energy efficiency.SOLUTION: A composition for a resist underlayer film comprises: a polymer containing a structural unit represented by the following chemical formula, a specific structural unit, or a combination thereof; a radical initiator having a bond dissociation energy of 0 to 60 kcal / mol; and a solvent.SELECTED DRAWING: Figure 1

A resist topcoat composition and a method of forming a pattern using the composition are provided. The resist topcoat composition includes: a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent.

Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a photoacid generator having a mass reduction rate of about 0% after 3 minutes from the time of measurement during thermogravimetric analysis (TGA) at 205° C. in an air atmosphere (air gas), and a solvent. The definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

According to various aspects of the present disclosure, the present disclosure relates to an automated process for the radiosynthesis of [18F]FSPG, a positron emission tracer. The automated optimization process of the present invention enables the centralized and large-scale production of [18F]FSPG for commercial use.

[Problem] To obtain a positive-acting photosensitive resin composition which is used for liquid-crystal display elements, organic EL display elements, etc., gives cured films having surfaces with high water repellency and high oil repellency, leaves little residue after patterning even with a high-concentration developing solution, and can form a cured-film image that is reduced in outgassing during high-temperature burning. [Solution] This positive-acting photosensitive resin composition comprises (A) component, which is a polymer having a liquid-repellent group, (B) component, which is an alkali-soluble resin having an N-hydroxyphenyl group, (C) component, which is a 1,2-quinonediazide compound, (D) component, which is a crosslinking agent, and (E) a solvent.

To provide an electron-generating member capable of reducing a friction coefficient.SOLUTION: An electron-generating member capable of reducing a friction coefficient is provided, the member comprising: an electron-generating portion made of an electron-generating material comprising powder of a natural mineral containing a radioactive substance and powder of an electron-generating substance that generates electrons when subjected to alpha rays emitted from the natural mineral; and a magnet laminated on the electron-generating portion.SELECTED DRAWING: Figure 1

The present invention relates to a photosensitive resin composition, a cured product thereof, a method for forming a pattern, and a method for producing a photosensitive resin composition. Specifically, the present invention relates to a photosensitive resin composition containing a polysilsesquioxane binder and exhibiting excellent storage stability, surface coating properties, and resolution, a cured product thereof, a method for forming a pattern, and a method for producing a photosensitive resin composition.

The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.

A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. (In formula (1), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, methyl group, or ethyl group; Q1 represents a divalent organic group; R1 represents a tetravalent organic group; and R2 represents an alkenyl group or alkynyl group having 2-10 carbon atoms.) The film-forming composition contains a solvent and a polymer that has a unit structure given by formula (1).

The present invention relates to a colored photosensitive resin composition, a color filter comprising the same, and an image display device, the colored photosensitive resin composition comprising a colorant, an alkali-soluble resin, a photopolymerizable compound, a photopolymerization initiator, and a solvent, the colorant comprising a compound represented by Chemical Formula 1, the alkali-soluble resin is formed by polymerizing a compound represented by a chemical formula 3 and a compound represented by a chemical formula 4. The present invention has the effects of being able to achieve high color reproducibility even at a relatively low weight concentration (PWC) of a colorant and being able to be used as a thin display, being able to be cured at a low temperature and having excellent reliability, and exhibiting excellent sensitivity such that developability and adhesion are improved, and being able to be used as a thin display. The development stain generation is inhibited, and the solvent resistance is further improved.

A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming a pattern or patterns using the hardmask layer manufactured from the hardmask composition, the hardmask composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent,