251results about How to "Improve film properties" patented technology

A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [μm]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer:

(−0.5N+40)≦H≦53; 5≦N<100.

A method of forming a film on a substrate by PEALD includes deposition cycles, each including (i) feeding a precursor in a pulse to a reaction space to adsorb a precursor on a surface of a substrate; (ii) after step (i), applying RF power to a second electrode to generate in the reaction space a plasma to which the precursor-adsorbed surface is exposed, thereby forming a sublayer on the surface; and (iii) applying a bias voltage to the second electrode while applying RF power in step (ii), which bias voltage is negative with reference to a potential on a surface of the first electrode, wherein the cycle is repeated to deposit multiple sublayers until a film constituted by the sublayers has a desired thickness.

A computer disk drive (22) having a write head (52) which includes a coil (38), a photoresist insulation layer (66) formed on the coil (38), and an insulation shell layer (102) which is formed on the photoresist insulation layer (66). In the first preferred embodiment (100), the top pole (42) of the write head (52) is formed on the insulation shell layer (102).

In the second preferred embodiment (200), the disk drive write gap (76) is formed on the insulation shell layer (102) and the top pole (42) of the write head (52) is formed on the write gap (76).

The insulation shell layers (102) in both embodiments are preferably made of dielectric materials (103).

Methods of fabrication for these embodiments are also disclosed.

A method of forming a phase change material thin film comprises supplying a first precursor including Ge and a second precursor including Te into a reaction chamber concurrently to form a GeTe thin film on a substrate. A second precursor including Te and a third precursor including Sb are concurrently supplied into the reaction chamber and onto the GeTe thin film to form a SbTe thin film. The supplying of the first and second precursors and the supplying of the second and third precursors to form a GeSbTe thin film.

An organic EL device comprising a cathode, an anode, and at least one organic compound layer containing an organic compound represented by formula (I):where L0 is any one of o-, p-, and m-phenylene groups which have two, three or four rings and which have a substituent with the proviso that when L0 is a phenylene group having four rings, the phenylene group may have an unsubstituted or substituted aminophenyl group somewhere therein, and at least one of R01, R02, R03 and R04 is any one of the following groups:where R1, R12, R13, R14, R15, R16 and R17 are each a substituted or unsubstituted aryl group, and r1, r2, r3 and r4 are each an integer of 0 to 5 with the proviso that r1+r2+r3+r4>=1.

A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH₄) derivatives having the molecular formula SiRR¹R²R³, disiloxane derivatives having the molecular formula R⁴R⁵R⁶—Si—O—Si—R⁷R⁸R⁹, and trisiloxane derivatives having the molecular formula R¹⁰R¹¹R¹²—Si—O—Si—R¹³R¹⁴—O—Si—R¹⁵R¹⁶R¹⁷ where R and R^1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

A stretched cellulose acylate laminate film having a skin layer containing a cellulose acylate with a total degree of acyl substitution of more than 2.7 and a core layer containing a cellulose acylate with a total degree of acyl substitution of 2.0-2.7 wherein the core layer is thicker than the skin B layer and at least one of these layers contains a retardation-controlling agent, is excellent in high expressibility, little optical unevenness and good releasability from a support.

(Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR¹R²R³ (R¹, R², and R³ are each independently selected from hydrogen and C_1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.

The invention relates to a method of producing an aqueous dispersion comprising mixing at least one silane compound and colloidal silica particles to form silanized colloidal silica particles, mixing said silanized colloidal silica particles with an organic binder to form the dispersion. The invention also relates to a dispersion obtainable by the method, and the use thereof.

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.

The present invention provides a process for forming a porous dielectric film, the process comprising: forming onto at least a portion of a substrate a composite film comprising Si, C, O, H and Si—CH₃ groups, wherein the composite film comprises at least one silicon-containing structure-forming material and at least one carbon-containing pore-forming material; and exposing the composite film to an activated chemical species to at least partially modify the carbon-containing pore-forming material, wherein at least 90% of Si—CH₃ species in the as deposited film remains in the film after the exposing step as determined by FTIR.

A method and apparatus for improving the properties of a deposited film. The method includes depositing a low-k dielectric on a substrate using a plasma-enhanced chemical vapor deposition process and performing a soft de-chucking sequence after depositing the low-k dielectric film using a soft plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.

A method for forming a thin film and a method for fabricating a liquid crystal display device using the same are provided. The method provides a process that is simplified. Uniform thin film characteristics can be obtained. The method for forming a thin film includes the steps of forming a diffusion barrier film on a substrate, forming a metal seed layer on the diffusion barrier film, removing a metal oxide film formed on a surface of the metal seed layer using an electric plating method, and depositing metal on the metal seed layer in which the metal oxide film is removed.

The present invention provides a composite powder coating composition obtained by granulating, with a liquid binder, a plurality of starting powder coating materials that are different from each other in hue and/or kind of base resin, and drying the granules, the liquid binder being a solution or dispersion of a binder compound having a softening temperature of 30 to 200° C. and containing a self-crosslinkable functional group or groups and/or a functional group or groups that complementarily react with functional groups of the starting powder coating materials, in a solvent that does not dissolve the starting powder coating materials; production process therefor; and a method for color-matching a composite powder coating composition, the method comprising the steps of dry blending, for color matching, a plurality of starting powder coating materials having different hues, granulating the resulting blend by adding the above-mentioned liquid binder, and drying the granules.

In accordance with one specific embodiment of the present invention, the ion assisted deposition source for thin films comprises an axially symmetric discharge region into which an ionizable gas is introduced, a sputter target at one end of that region, an axially symmetric magnetic field within and extending out the opposite and open end of that region, an anode around the circumference of that region, and an electron emitting cathode located near the open end of that region. Particles are sputtered from the sputter target, pass through the discharge region, and are deposited on a deposition substrate located exterior of both the discharge region and the deposition source. A beam of energetic ions from the discharge region bombards the film being deposited to improve the adhesion, density, and other properties of that film. The density of the plasma can be controlled with the emission from the cathode, the emission of sputtered particles from the sputter target can be controlled with the negative potential of that target, while the energy of the ions used to assist in the deposition can be controlled with the positive potential of the anode. The deposition source thus simultaneously generates a flux of sputtered material with which to deposit a film on a substrate and a beam of energetic ions to assist in that deposition, and does so with a simple and economical apparatus.

A substrate having one or more shaped effusion cooling holes formed therein. Each shaped cooling hole has a bore angled relative to an exit surface of the combustor liner. One end of the bore is an inlet formed in an inlet surface of the combustor liner. The other end of the bore is an outlet formed in the exit surface of the combustor liner. The outlet has a shaped portion that expands in only one dimension. Also methods for making the shaped cooling holes.

The invention is directed to a polypropylene resin, which is suitable for manufacturing an air quenched blown film. The resin has a melt flow rate of greater than 5 g/10 min, less than 2% xylene solubles, a pentad isotacticity of greater than 95%, an isotactic pentad/triad ratio of greater than 95%, a crystallinity of at least 65%, and a crystallization temperature of at least 127° The polypropylene resin contains from 500 ppm to 2500 ppm of a nucleator/clarifier additive. A quenched blown film made from resin exhibits a crystallization onset temperature of at least 116° C. and a crystallization half-life time of less 4.1 seconds or less when tested using fast DSC analysis with a scan rate of 200° C./minute.

The invention provides a conductive substance-adsorbing resin film on which a conductive layer being excellent in adhesion to the resin film and having less unevenness at the interface with the resin film can easily be formed, a method for producing the same, a metal layer-coated resin film on which a high definition wiring excellent in adhesion to the insulating resin film can easily be formed, which is obtained by using the conductive substance-adsorbing resin film of the invention, and a method for producing a metal layer-coated resin film that is a material capable of easily producing a printed-wiring board having a high definition wiring. The invention also provides a conductive substance-adsorbing resin film including at least two resin layers, wherein at least one of the resin layers is an adsorbing resin layer having a property of adsorbing a conductive substance or a metal. This conductive substance-adsorbing resin film is allowed to adsorb a metal and subjected to plating, whereby a metal layer-coated resin film can be obtained.