372 results about "Silicon nitride" patented technology

The application discloses a kind of light field regulation detection method and device based on computing spectral reconstruction, belong to spectral analysis technical field.The method is by introducing medium-metal composite nanostructure, integrates metal nanoisland array and silicon nitride nanocolumn array on quartz substrate, realizes electric field enhancement using the local surface plasmon resonance effect excited by metal nanoisland array, simultaneously realizes wide spectral range phase coding by medium nanocolumn array;Super surface chip is integrated with single point detector, combines pre-calibrated super surface sensing matrix A and enhancement factor matrix E, and reconstructs spectrum using compressed sensing or Tikhonov regularization algorithm.The application keeps the advantages of miniaturization and no moving parts, realizes directional high sensitivity detection to weak signal, and signal-to-noise ratio is improved.

This invention provides a method for fabricating a dummy gate process in a semiconductor chip, comprising: providing a substrate in which a plurality of shallow trench isolation structures are formed; forming an ONO layer on the surface of the substrate with the shallow trench isolation structures; forming photoresist at the position of the dummy gate pattern corresponding to the shallow trench isolation structure; wet etching to remove the top silicon oxide layer in the ONO layer not covering the photoresist; after removing the photoresist, wet etching to remove the silicon nitride layer and silicon oxide layer in the ONO layer; forming a gate oxide layer; forming a dummy gate pattern on the surface of the substrate with the gate oxide layer; forming a sidewall layer on the surface of the dummy gate pattern; etching the substrate on both sides of the dummy gate pattern and forming source / drain regions using epitaxy; filling the source / drain regions with an intermediate dielectric layer, and then removing the dummy gate pattern. This invention avoids device failure caused by device short circuits, thereby improving device reliability.

This invention belongs to the field of electronic materials technology, specifically relating to a sintering aid, a silicon nitride HTCC ceramic packaging electronic paste, its preparation method, and its application. The sintering aid comprises the following components by mass percentage: SiO2: 30%~60%, Al2O3: 10%~25%, Y2O3: 10%~40%, ZrO2: 0.2%~1.5%, MgO: 3%~15%, SiC: 0.3%~1.5%, and TiO2: 0.1%~1.5%. This sintering aid exhibits better corrosion resistance and mechanical properties, ensuring good bonding between the tungsten metallization layer and the silicon nitride ceramic substrate. It prevents blackening and blistering issues after nickel plating. When the electronic paste prepared using this sintering aid is applied to DIP leads, the pull-out strength reaches 55N~65N, with the fracture mode being lead breakage, meeting the requirements for package reliability and high-frequency transmission.

The application belongs to the technical field of inorganic porcelain composite materials, and particularly relates to an inorganic porcelain composite material for resisting salt and nitrate and preventing moisture and a preparation method thereof. The application comprises the following steps: preparation of activated base powder; and sintering of the activated base powder. The application is prepared by sintering a blank body made of calcium carbonate, talcum powder, silicon nitride, quartz sand and perhydrogen polysilazane. The perhydrogen polysilazane is first decomposed to solidify and shrink the blank body. When the temperature continues to rise, the quartz in the blank body and the silicon dioxide generated by the oxidation of the silicon nitride are both in a molten state and are fused with each other. The oxygen in the air penetrates into the blank body by diffusion and reacts with the silicon nitride. At this time, the nitrogen gas generated by the silicon nitride cannot diffuse outward under the molten blank body formed after solidification and shrinkage, and gradually gathers to cause the expansion of the base and a high closed porosity. The prepared inorganic porcelain composite material has excellent moisture resistance and high resistance to salt and nitrate.

Methods of filling a gap in a semiconductor structure are presented. A titanium nitride and sacrificial silicon nitride spacer is deposited onto a line pattern comprising a trench between two lines of the line pattern. The titanium nitride and sacrificial silicon nitride spacer is etched to leave titanium nitride and sacrificial silicon nitride spacer covering sides of the two lines within the trench. An organic planarization layer is applied over the line pattern and the titanium nitride and sacrificial silicon nitride spacer. A pillar cut is cut through the organic planarization layer and into the trench to form a gap within the trench. The gap is filled with silicon oxide.

The application discloses a method for solving water stain residual defects after silicon carbonitride cleaning, which comprises the following steps: step S1, providing a semiconductor substrate; step S2, depositing a silicon carbonitride film on the semiconductor substrate; step S3, performing carbon dioxide plasma treatment on the semiconductor device after step S2; and step S4, performing subsequent processes. The application can effectively remove the ammonia component without affecting the quality of the NDC film, so that the etching barrier layer NDC can remove large-particle defects through a water washing process, and the yield loss caused by the water stain defects due to the random generation of large-particle defects in the NDC process can be avoided.

This invention discloses a silicon nitride grinding device, relating to the technical field of silicon nitride grinding devices. The device includes a support frame and a collection box. A conical cylinder is fixedly mounted on the upper surface of the support frame, and the collection box is disposed on the lower surface of the support frame. A feed trough is fixedly mounted on the upper surface of the conical cylinder, and a water storage tank is fixedly mounted on the circumferential surface of the conical cylinder. A water spray head is provided on the inner wall of the conical cylinder. A rotating shaft is rotatably mounted on the upper surface of the inner wall of the conical cylinder, and a grinding head is fixedly mounted on the lower surface of the rotating shaft. A grinding disc is fixedly mounted on the inner wall of the conical cylinder. A material unblocking device is also provided inside the conical cylinder. When the feed trough is blocked, it affects the grinding efficiency, potentially causing a decrease in output or production stoppage. Blockage causes material to accumulate in the feed trough, increasing the pressure and stress on the material. If this blockage persists for a long time, it may damage the feed trough.

This invention discloses a method for nitriding and firing silicon nitride-bonded silicon carbide products, comprising the following steps: the product blank is placed in a furnace, preheated at a low temperature, ventilated at a medium temperature, nitrided at a high temperature, cooled at a high temperature, and cooled by air. During low-temperature preheating, the furnace cavity pressure is -100 Pa to 100 Pa; during medium-temperature ventilation, the furnace cavity pressure is 100 Pa to 500 Pa; during high-temperature nitriding and cooling, the furnace cavity pressure is 500 Pa to 1000 Pa; and during air cooling, the furnace cavity pressure is -100 Pa to 100 Pa. In this invention, from low-temperature preheating to air cooling, the pressure inside the furnace cavity remains close to the external atmospheric pressure, resulting in a relatively low-pressure state throughout the firing process. This low-pressure environment reduces the mean free path of gas molecules, which is beneficial for diffusion. The use of dynamic displacement drainage, dynamic nitrogen filling and impurity removal, and air cooling during the firing process greatly enhances the mass transfer process and significantly shortens the nitriding and firing cycle of silicon nitride-bonded silicon carbide products.

Various embodiments of the present disclosure are directed towards a semiconductor structure (e.g., an integrated circuit (IC) die) comprising an enhanced cap layer for pad oxidation prevention, as well as a method for forming the IC die. An interconnect pad overlies a substrate at a top of an interconnect structure, and a bond structure overlies and extends from a surface of the interconnect pad. A cap layer and an etch stop layer overlie the surface around the bond structure. Further, the cap layer separates the etch stop layer from the interconnect pad and is soft. Soft may for example, refer to a hardness less than silicon nitride and / or less than the etch stop layer. Because the cap layer is soft, a probe may be pushed through the cap layer to the interconnect pad for testing without first forming a pad opening exposing the interconnect pad.

The present invention provides a heat exchanger capable of stably and continuously recovering heat over a long period of time, even when the target gas for heat recovery is an extremely corrosive gas, and an exhaust gas treatment device using such a heat exchanger. [Solution] The heat exchanger of the present invention is characterized by comprising a partition plate (14) made of refractory castable material that divides the inside of the casing (12) so that the low-temperature side fluid (LF) and the high-temperature side fluid (HF) flow in countercurrents, and a plurality of solid heat transfer rods (16) made of at least one ceramic selected from the group consisting of alumina, zirconia, silicon carbide, silicon nitride, molybdenum silicide, and lanthanum chromite, which are arranged to airtightly penetrate the front and back surfaces of the partition plate (14) and cross the flow paths of the low-temperature side fluid (LF) and the high-temperature side fluid (HF).

This invention discloses a method for combining CNC high-precision high-temperature resistant insulating substrate engraving with tin-copper alloy printed circuit 3D printing, belonging to the field of high-power circuit carrier manufacturing technology. The invention uses 99.7% alumina ceramic or silicon nitride ceramic as the insulating substrate, achieving high-precision structural forming of ±0.005-0.025mm through CNC layer engraving. Sandblasting, roughening, sensitization, activation, and pre-plating surface modification enhance interfacial adhesion. CuSn10 tin bronze is used as the printing material, and the circuit is formed by SLM or FDM 3D printing at a sintering temperature of 850-900℃, achieving a forming density ≥98.71%. Through stepped heating sintering and high-temperature resistant inorganic adhesive curing, the ceramic substrate and tin-copper alloy circuit are integrated. The circuit carrier obtained by this invention has a long-term temperature resistance of ≥1600℃, a volume resistivity of ≥10¹⁴Ω·cm, a current carrying capacity of 15.6A for 3mm lines, and an adhesion strength retention rate of ≥95% after 1000 thermal cycles. The temperature rise is 15~20℃ lower than that of traditional PCBs. It is suitable for high-load, high-current scenarios such as industrial power supplies and new energy power control. It is compatible with processes and has complete industrial support, and has significant technical and economic feasibility.

The utility model discloses a kind of silicon nitride ceramic bearing dynamic balance test tool, belong to dynamic balance test field.A kind of silicon nitride ceramic bearing dynamic balance test tool, including rack and the positioning frame of detachable installation on rack, further include: rotation is installed on the rack gas expansion shaft, wherein, the gas expansion shaft is provided with the driving part for driving gas expansion shaft rotation;At least two groups of laser vibration meter, the laser vibration meter is set on gas expansion shaft upper end, wherein, the laser vibration meter is provided with adjusting member;Positioning frame of sliding connection on the rack;The utility model can realize the quick positioning of multiple silicon nitride ceramic bearings by using gas expansion shaft, subsequently under the driving of driving part, make multiple silicon nitride ceramic bearings rotate, and the position adjustment of multiple laser vibration meters using adjusting member, can realize one-to-one monitoring, to improve silicon nitride ceramic bearing dynamic balance detection quality and efficiency.

This utility model relates to the field of nozzle processing technology, and in particular to a tooling for electrolytic machining of the inner hole of a silicon nitride ceramic nozzle. It includes a base on which a tooling mechanism is mounted for nozzle positioning. The tooling mechanism includes: a main assembly comprising several housings fixed to the top of the base; four circumferentially distributed guide seats fixed inside each housing; a locating pin slidably mounted inside each guide seat; a protruding rod fixed inside each locating pin; a ring mounted inside each housing; four circumferentially distributed guide grooves inside the ring; and the protruding rod located inside each guide groove. A control assembly is mounted on the base and used to control the positioning of the nozzle by the main assembly. Automatic centering and clamping of the nozzle is achieved through rotational drive, ensuring that the inner hole is coaxial with the electrode. A uniform gap is maintained between the electrode and the inner hole for electrolyte flow, and a return channel is provided to prevent liquid accumulation, ensuring the accuracy and stability of the electrolytic machining.

The application discloses a device for preparing a textured ceramic cutter and belongs to the technical field of ceramic cutting tools. The device is characterized in that a ceramic core rod is placed in a circular table cavity, long strip beta-silicon nitride whiskers are added into ceramic slurry of the ceramic core rod, the ceramic slurry slowly flows into the circular table cavity under the action of gravity, the circular table cavity slowly rotates and slowly moves away from the ceramic core rod, the movement of the circular table cavity relative to the ceramic core rod is oblique movement, the ceramic core rod slowly covers the surface slurry under the action of the oblique speed of the circular table cavity, and the long strip beta-silicon nitride whiskers mostly present the same movement direction under the movement, so that the effect of texturing the outer structure of the ceramic cutter is achieved.

This invention provides a magnetron sputtering method for preparing a highly bonded alumina / silicon nitride / metal composite thin film, belonging to the field of thin film material preparation technology. The magnetron sputtering method includes the following steps: Step 1, pretreating an alumina substrate to obtain a pretreated alumina substrate; Step 2, using a silicon target as the target material, preparing a silicon nitride layer on the surface of the pretreated alumina substrate by magnetron sputtering; Step 3, after forming the silicon nitride layer on the surface of the alumina substrate, directly switching the power supply to DC sputtering to prepare the metal layer: using a metal element as the target material, preparing the metal layer on the surface of the silicon nitride layer by DC sputtering. The method provided by this invention achieves strong interfacial bonding between the silicon nitride layer and the alumina substrate, and between the metal layer and the silicon nitride layer, improving the stability of the thin film structure and meeting the application requirements of high-performance devices.

The application discloses an antioxidant composite ceramic aerogel and a preparation method thereof, and belongs to the technical field of composite ceramic aerogels.The main body of the antioxidant composite ceramic aerogel is a silicon nitride aerogel, the nanostructure of the silicon nitride aerogel is one of one-dimensional silicon nitride nanowires and two-dimensional silicon nitride nanobands or a combination of the two nanostructures, and a mullite coating and a copper-nickel metal coating are sequentially coated on the nanostructure of the silicon nitride aerogel from inside to outside.The application can solve the technical problem that the prior art cannot prepare silicon nitride ceramic aerogels which can stably serve in a high-temperature oxygen environment at low cost and in batches.

This invention discloses a PP-based battery cell lead terminal material containing modified insulating and thermally conductive filler and its preparation method, relating to the field of polymer composite materials technology. The material comprises polypropylene, modified thermally conductive and insulating filler, thermal stabilizer, plasticizer, antioxidant, and lubricant. The modified thermally conductive and insulating filler consists of a point-sheet-wire synergistic thermally conductive framework composed of spherical α-alumina, hydroxylated hexagonal boron nitride nanosheets, and silicon nitride whiskers, sequentially forming a polydopamine anchoring layer, a magnesium-aluminum layered double hydroxide insulating locking layer, a polyphosphazene-siloxane-POSS composite shell, and a maleic anhydride-grafted polypropylene wax compatible coating layer. The resulting material possesses thermal conductivity, insulation, flame retardancy, heat resistance, mechanical stability, and processing performance, making it suitable for battery cell lead terminals and their surrounding insulating and thermally conductive structural components.

This invention provides a cavity-enhanced germanium-silicon photodetector based on silicon corner mirrors, comprising a silicon substrate layer, a germanium absorption region on the silicon substrate layer, and silicon corner mirrors located on the front and rear sides of the germanium absorption region; a germanium via layer is provided above the germanium absorption region, the via layer having a plurality of germanium vias, and a signal electrode is provided at the top of the germanium via layer; silicon via layers are provided on the left and right sides of the germanium absorption region, the silicon via layers having a plurality of silicon vias, and a ground electrode is provided at the top of the silicon via layers; two silicon nitride waveguides are arranged opposite each other, extending from the opposite outer sides of the two silicon via layers toward the sides of the germanium absorption region. The technical solution of this invention has excellent high-power processing capability, achieves polarization-insensitive detection, effectively overcomes the contradiction between responsivity and bandwidth, is fully compatible with CMOS manufacturing processes, and is conducive to large-scale integration and mass production.

The application relates to a foamed ceramic capable of serving at 1000 DEG C and a preparation method thereof, and belongs to the technical field of foamed ceramics. The preparation method of the foamed ceramic capable of serving at 1000 DEG C comprises the following steps: (1) mixing barium titanate, manganese oxide, iron oxide and fluorite to obtain a mixture; (2) ball milling the mixture into mixed powder I; (3) ball milling solid waste raw materials into mixed powder II; (4) mixing silicon nitride with the mixed powder I, the mixed powder II and water, stirring uniformly to prepare mixed powder III; (5) pressing the mixed powder III into a green body; and (6) sintering the green body to obtain the foamed ceramic. The physical and mechanical properties of the foamed ceramic prepared by the application are almost consistent with the initial state at room temperature after serving at 1000 DEG C for 100 hours, which indicates that the foamed ceramic has the characteristics of high high-temperature strength and stable comprehensive performance, and meets the application requirements of long-time service at 1000 DEG C.

The application relates to the field of bearing ball preparation, and discloses a forming die and a preparation process of a thermal shock-resistant silicon nitride ceramic bearing ball, which comprises a die base, a DC motor is installed at the top of the die base, a transmission rod is rotationally connected to the top of the die base, a guide rod is fixedly connected to the top of the die base, the output end of the DC motor is fixedly connected with one end of the transmission rod, a guide screw is fixedly connected to one end of the transmission rod, and a sliding frame is threadedly connected to the outside of the guide screw. The die plate is arranged to slide on the top of the mounting base through the sliding T block, and is limited through the limiting block; when the user pushes the push block, the limiting block can be retracted into the limiting body, the die plate can be conveniently disassembled, disassembled and installed, the die plate can be conveniently disassembled, replaced and cleaned, and the problem of inconvenient disassembly and installation of the die plate is solved.

This invention discloses a method for fabricating a high-efficiency Micro-OLED structure, belonging to the field of OLED display technology. Addressing the problems of insufficient brightness, severe large-angle scattering light loss, and bottlenecks in improving light extraction efficiency in existing silicon-based Micro-OLEDs, this invention fabricates a silicon dioxide / silicon nitride bilayer dielectric layer on a CMOS substrate. Utilizing the difference in etching rates between the two layers, a parabolic reflective bowl anode is fabricated. The pixel definition layer, organic light-emitting layer, thin-film encapsulation layer, color filter layer, and planarization layer are then fabricated sequentially. Finally, a microlens array coaxial with the reflective bowl is fabricated, forming a synergistic light-gathering system. This invention can significantly reduce internal light loss in the device, significantly improve peak brightness and light extraction efficiency, is compatible with existing mass production processes, and meets the high-brightness application requirements of AR / VR near-eye displays.

A coating includes a filler, an alkali metal-rich silicate having the formula [Li2O] x [Na2O] y [K2O] z [SiO2] and water. The filler includes alumina, aluminosilicate, calcium silicate, titanium dioxide, silicon carbide, silicon nitride, boron nitride, hexagonal boron nitride, zircon, kaolin, mica, vermiculite, graphite, or a combination thereof. The sum of x, y, and z in the alkali metal silicate is at least 0.35. The molar ratio of water to alkali metal silicate in the coating is 4 to 20. Coatings and articles containing dried coatings that can be used as impact-resistant thermal barriers in high temperature applications.

Described is selective deposition of a silicon nitride (SiN) trap layer to form a memory device. A sacrificial layer is used for selective deposition in order to permit selective trap deposition. The trap layer is formed by deposition of a mold including a sacrificial layer, memory hole (MH) patterning, sacrificial layer recess from MH side, forming a deposition-enabling layer (DEL) on a side of the recess, and selective deposition of trap layer. After removing the sacrificial layer from a slit pattern opening, the deposition-enabling layer (DEL) is converted into an oxide to be used as blocking oxide.

This application provides a planarization composition, its preparation method, application, planarization process, and electronic device. The planarization composition includes cerium oxide, an additive, and a solvent. The additive has the following structural formula: [Formula omitted for brevity]. R1 is selected from a carboxyl or carboxylate group, and at least one of R2, R3, R4, R5, and R6 is selected from a carboxyl, carboxylate, or ester group, representing a single or double bond. When a double bond is represented, R6 is absent. This planarization composition exhibits rapid planarization speed and a high selectivity ratio for planarization speed between silicon oxide and silicon nitride, which is advantageous for its use in electronic device fabrication, such as in the manufacture of industrial automatic control system devices, and especially in the fabrication of semiconductor devices.

The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

heat dissipation element (13) comprising a ceramic heat radiation material (20), wherein the ceramic thermal radiation material (20) contains silicon nitride and boron nitride as its main components, and a ratio of the mass of boron nitride to the mass of silicon nitride and boron nitride is 10 mass-% to 40 mass-%, The boron nitride has an average particle size of 0.05 µm to 1 µm, and the ceramic thermal radiation material (20) exhibits an average emissivity of higher or equal to 70% in wavelength ranges from 3 µm to 25 µm at temperatures up to 200°C.

The utility model discloses an insulating ring, including insulating ring main part, the material of insulating ring main part is silicon nitride, the utility model provides an insulating ring, uses silicon nitride as the insulating material of insulating ring can effectively reduce the background of sodium, aluminium, calcium and other elements under the condition of guaranteeing element test accuracy.

This invention belongs to the field of silicon nitride ceramic technology, specifically relating to a TEOS-coated silicon nitride ceramic powder, its preparation method, and its application. The TEOS-coated silicon nitride ceramic powder comprises a core layer and a coating layer; the core layer comprises silicon nitride; the coating layer is mainly prepared from tetraethoxysilane; based on the mass of SiO2, the mass of the coating layer is 0.5–15 wt% of the mass of the core layer. The TEOS-coated silicon nitride ceramic powder prepared by this invention can achieve a better refractive index match with photosensitive resin and a more uniform interface in photocurable ceramic forming processes, reducing light scattering and absorption unevenness problems, and significantly increasing the curing depth under the same exposure conditions. When used as a sintering aid, the TEOS-coated silicon nitride ceramic powder prepared by this invention can lower the densification temperature of silicon nitride ceramics while improving relative density and mechanical properties.

This invention belongs to the field of solar cell technology and relates to a method for producing a tunneling oxide passivated contact solar cell. This invention improves light absorption efficiency and ensures smooth current flow by sequentially texturing, P-type diffusion, and etching a silicon wafer. An aluminum oxide passivation layer is deposited on the front side of the etched silicon wafer. A silicon oxide film is prepared on the front aluminum oxide passivation layer and the back side of the silicon wafer, and a doped amorphous silicon film is deposited on the silicon oxide film. The amorphous silicon film deposited on the silicon wafer is annealed to crystallize it, forming a polycrystalline silicon structure. A silicon nitride film is deposited on the back amorphous silicon layer as an antireflection layer and protective layer, which reduces light reflection on the cell surface and improves light absorption efficiency. Metal grid lines are printed on the front and back sides of the silicon wafer, and the silicon wafer with the printed metal grid lines is placed in a high-temperature furnace for sintering to obtain a tunneling oxide passivated contact solar cell.

This invention discloses an image sensor and its manufacturing method. The method includes: Step S1, providing a wafer including a substrate and a plurality of gates formed on the substrate, with adjacent gates forming a gate spacer; the substrate is ion-implanted to form an active / drain region; Step S2, depositing an oxide layer on the surface of the gate spacer and above the gates; Step S3, performing high-temperature rapid annealing on the wafer to activate the active / drain regions; Step S4, depositing a silicon nitride layer on the oxide layer surface using an HCD process. This invention, by depositing a silicon nitride layer using the HCD process, not only avoids lattice damage caused by plasma in existing deposition processes, but also, due to the high process temperature and long processing time of the HCD process, the prolonged and sufficiently high temperature heat treatment effectively improves the uniformity of implanted ion distribution and lattice repair, thereby significantly improving WP performance by approximately 35%.