4132 results about "Silicon nitride" patented technology

A method for creating polycrystalline silicon nitride fibers is discussed. The method includes dispersing silicon nitride powder to create dispersed silicon nitride powder. The dispersed silicon nitride powder is classified to create classified fine silicon nitride powder. Likewise, a sintering aid is dispersed to create a dispersed sintering aid and then classified to create a classified sintering aid. A plasticizer, a binder, and the classified sintering aid are added to the classified fine silicon nitride powder to define a compound. The compound is mixed to create a mixed slurry, which is then dried to create a material. The material is extruded through a nozzle that is less than 40 micrometers in diameter to create a preform, which is then sintered to create the polycrystalline silicon nitride fibers.

The invention discloses a high-temperature-resistant epoxy insulating material for a transformer and a preparation method thereof, and belongs to the technical field of insulating materials. The high-temperature-resistant epoxy insulating material for the transformer is prepared from the following components in parts by weight: 50 to 60 parts of bisphenol A epoxy resin, 20 to 50 parts of anhydride curing agent, 10 to 20 parts of modified composite filler and 5 to 10 parts of epoxidized hydroxyl-terminated liquid polybutadiene, wherein the modified composite filler is a mixture of first boron nitride, second boron nitride and silicon nitride grafted with a silane coupling agent and dopamine, and the mass ratio of the first boron nitride to the second boron nitride to the silicon nitride is (1-2): (2-4): 1. The high-temperature-resistant epoxy insulating material for the transformer has excellent mechanical property, insulating property, heat-conducting property and high-temperature aging resistance.

The invention discloses a lithium battery diaphragm coating based on a nano material and application thereof, and relates to the technical field of lithium battery diaphragms. The coating comprises the following raw materials in parts by weight: 15-25 parts of polystyrene maleic anhydride copolymer modified polyvinylidene fluoride, 10-20 parts of polystyrene, 2-4 parts of nano silicon nitride, 3-6 parts of a boehmite / aluminum oxide and silicon dioxide composite material, 1-2 parts of a dispersing agent and 65-90 parts of a solvent, according to the lithium battery diaphragm coating provided by the invention, the wettability and absorptivity of a diaphragm to an electrolyte are remarkably improved, meanwhile, the lithium battery diaphragm coating also has excellent thermal stability, and the diaphragm can be effectively prevented from thermal shrinkage or melting under a high-temperature condition, so that the safety performance of a battery is remarkably enhanced.

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

The invention discloses a preparation method of a textured silicon nitride ceramic substrate, and belongs to the technical field of ceramic products. Beta-silicon nitride whiskers with the long diameter of 4-15 microns and the short diameter of 1-3 microns are added into silicon nitride ceramic slurry according to the design, and when the whiskers containing beta-silicon nitride pass through a scraper of a casting machine, the whiskers tend to be directionally arranged in the casting direction, so that a textured structure is generated in the silicon nitride ceramic substrate. The textured structure is beneficial to improving the three-point bending strength, the fracture toughness and the thermal conductivity in the horizontal direction of the ceramic substrate.

The invention relates to the technical field of solar cells, in particular to a film layer structure for improving UV attenuation of a TOPcon cell. In order to improve the passivation effect of the front face of the TOPCon cell, an aluminum oxide passivation layer is generally arranged on the surface of a BSG layer on the front face of the TOPCon cell, but the aluminum oxide passivation layer is poor in ultraviolet resistance and prone to being damaged by ultraviolet light, and then the service life of the cell is affected. Aiming at the problem, the invention provides the film layer structure for improving UV attenuation of the TOPcon battery, the second silicon oxide layer and the first silicon oxide layer are respectively arranged above and below the aluminum oxide layer, and the silicon nitride layer is arranged on the surface of the second silicon oxide layer, so that the passivation effect of the front surface of the obtained TOPcon battery is remarkably improved, the attenuation speed of the battery is effectively reduced, and the service life of the battery is prolonged. And the service life of the battery is prolonged.

The invention relates to the technical field of solar cells, and particularly discloses a back contact solar cell and a preparation method thereof, a cell assembly and a photovoltaic system, the back contact solar cell comprises a silicon substrate, the silicon substrate is provided with a first surface, a second surface and a side surface, the first surface and the second surface are oppositely arranged, and the side surface is respectively connected with the first surface and the second surface; the anti-reflection passivation composite layer comprises a first branch part arranged on the first surface and a second branch part extending from the edge of the first branch part to the outside of the side surface; the anti-reflection passivation composite layer comprises an ultrathin silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer and a silicon oxide layer which are sequentially arranged in the direction away from the silicon substrate, and the refractive indexes of the silicon nitride layer, the silicon oxynitride layer and the silicon oxide layer are sequentially decreased. Influences brought by defects on the side face of the silicon substrate can be effectively solved, parasitic absorption on the edge of the cell can be reduced, the anti-reflection and passivation effects of the anti-reflection and passivation composite layer can be effectively improved through mutual cooperation of the multiple material layers, the stress problem can be improved, the conversion efficiency of the cell can be integrally and effectively improved, and the service life of the cell can be prolonged. And the long-term reliability of the battery is ensured.

The invention belongs to the technical field of solar power generation, and particularly relates to a back contact BC solar cell structure and a preparation method thereof. A tunneling SiO2 layer and a phosphorus-doped N + poly layer with high crystallization rate and low parasitic absorption are arranged in a back N region of the cell; the P region is sequentially provided with an i: a-Si layer, a P: a-Si sub-layer and a P-uc-SiOxCy sub-layer; the front surface of the cell is provided with a laminated gradient silicon nitride antireflection passivation film; the back N region adopts the SiO2 layer and the N + poly field structure with high crystallization rate and low parasitic absorption to replace an i: a-Si + N: a: Si field structure of a traditional HBC to improve the current density, and the back N region adopts the suede light trapping structure to replace a polishing structure to improve the current density. A low-temperature silicon nitride antireflection film is additionally arranged on the upper layer of the TCO transparent conductive film to improve passivation and current density, silicon nitride coverage antireflection is carried out on the isolation regions of the P region and the N region to improve passivation and current density, the back efficiency of the cell is improved, and the double-sided rate is improved.

The invention belongs to the technical field of ceramic preparation, and particularly relates to silicon nitride ceramic and a preparation method thereof. The silicon nitride ceramic is prepared from the following raw materials in parts by weight: 80-99.5 parts of silicon nitride powder and 0.5-20 parts of a sintering aid, the silicon nitride powder is alpha-Si3N4 powder; the sintering aid comprises at least two of CaF2, Y2O3, MgO, Mg (OH) 2, Al (OH) 3, Al2O3, AlN, MgCO3, Mg (NO3) 2, Y (NO3) 3 and Al (NO3) 3. On the basis of an existing silicon nitride dissolution-precipitation sintering mechanism, by adding sintering aids such as low-cost calcium fluoride, introducing a gas-phase mass transfer mechanism and combining a low-cost direct-current electric field assisted sintering technology, low-cost and rapid preparation of the high-performance silicon nitride ceramic is achieved, the process is simple and efficient, and operation is easy to control.

The invention provides a germanium-silicon groove preparation method, which comprises the following steps of: forming a PMOS (P-channel Metal Oxide Semiconductor) gate structure and an NMOS (N-channel Metal Oxide Semiconductor) gate structure on a semiconductor substrate, arranging a first silicon nitride layer, a silicon oxide layer and a second silicon nitride layer in hard mask layers of the PMOS gate structure and the NMOS gate structure, exposing the second silicon nitride layer through a gate side wall, and covering a germanium-silicon mask layer, a patterned photoresist protection NMOS gate structure is formed, the germanium-silicon mask layer exposed in the PMOS region is etched, a groove is formed, and at least part of the second silicon nitride layer is reserved at the top of the PMOS gate to protect the silicon oxide layer; according to the method, the first silicon nitride layer and the germanium-silicon mask layer are etched, germanium-silicon deposition is carried out, and the residual second silicon nitride layer and the germanium-silicon mask layer are removed together through wet etching, so that the height difference of the hard mask layer caused by the conventional process of the PMOS gate and the NMOS gate is eliminated, the process load is avoided, the process steps are simplified, and the process cost is reduced.

The invention provides a metal matrix composite microstructure strengthening simulation method and system, and relates to the technical field of composite mechanical property simulation, and the method comprises the following steps: establishing a polycrystalline aluminum matrix atomic model and a spherical silicon nitride particle strengthening phase atomic model unit; embedding the spherical silicon nitride particles into the polycrystalline aluminum matrix according to the target embedding position coordinates, and integrating to generate an atomic scale structure model; according to the method, an embedded atom potential function is adopted to describe interaction among atoms in a polycrystalline aluminum matrix, a Tersoft potential function is adopted to describe covalent bond interaction among atoms in spherical silicon nitride particles, and a Lennard-Jones potential function is adopted to describe interaction among heteroatoms at a Si3N4 / Al interface; based on the interaction potential between atoms, molecular dynamics simulation is adopted for conducting uniaxial stretching simulation on the atomic scale structure model, mechanical property parameters of the particle reinforced metal matrix composite are obtained through calculation, and a visualization method is combined for analyzing the microcosmic strengthening mechanism of the particle reinforced metal matrix composite.

Methods and apparatuses for depositing silicon nitride in various applications are provided. Embodiments include depositing silicon nitride directly on silicon or silicon oxide surfaces using modulated dose to conversion time ratios in thermal atomic layer deposition. Embodiments include exposing a silicon oxide surface to a nitrogen-containing plasma treatment prior to depositing any silicon nitride and depositing silicon nitride by thermal atomic layer deposition.

The invention relates to the technical field of radio frequency integrated circuits and advanced semiconductor packaging, in particular to a multilayer spiral inductor structure based on an RDL process and a preparation method. The preparation method comprises the steps of seed layer deposition, gradient line width coil formation through photoetching and electroplating, alternate dielectric layer deposition, through hole etching to form vertical interconnection copper columns, air bridge forming through a photoresist sacrificial layer process and silicon nitride passivation packaging. Through fan-shaped topological layout, dielectric material collaborative optimization and three-dimensional interconnection structure design, the self-resonant frequency bandwidth is effectively improved, conductor and dielectric loss is reduced, and miniaturization integration and high reliability of high-frequency inductance elements are achieved.

The invention relates to the technical field of sole processing, in particular to a sole composite processing method, which comprises the following steps: according to the rigidity requirement of an arch support area, preparing high-density slurry in which silicon nitride ceramic powder accounts for 30-40%, forming # imgabs0 # crystal phase through microwave-assisted sintering, and controlling the porosity to be 10-20%; according to the energy rebound requirement of the forefoot buffer area, graphene oxide / carboxymethyl cellulose aerogel powder is added into the slurry until the concentration is 25%, and the porosity is increased to 40-60% by combining the honeycomb porous network design; a nano silicon dioxide reinforcing agent is introduced into a wear-resistant area of the heel to 15%, a diamond-like carbon coating is formed through plasma surface treatment, and the porosity is limited to be 5-15%. According to the invention, silane is encapsulated by adopting polyurea microcapsules, and is released only when the material is damaged, so that dynamic self-repairing is realized, the shoe sole is endowed with dynamic repairing capability, and the service life is prolonged.

The invention discloses a gel solid electrolyte, a preparation method thereof and a lithium ion battery, and relates to the technical field of batteries. The gel solid electrolyte comprises the following components: a solvent, a lithium salt, an inorganic salt or an organic small molecule additive, an ester cross-linking agent polymeric monomer, a silazane polymeric monomer, a diluent and an initiator, the invention also provides a lithium ion battery comprising the gel solid electrolyte and a preparation method of the lithium ion battery. The preparation method has the beneficial effects that by introducing the silazane polymeric monomer and the ester cross-linking agent polymeric monomer, the silazane polymeric monomer and the ester cross-linking agent polymeric monomer can be subjected to a copolymerization reaction, so that in-situ curing of the electrolyte is realized. The silazane fragment in the high-molecular polymer skeleton can effectively realize the constraint on strong Lewis acid substances such as PF5 and can also remove hydrofluoric acid and trace water so as to realize the protection of positive and negative active materials.

The invention provides a polysilazane green special refractory ceramic coating and a preparation method thereof, and belongs to the field of ceramic coatings. The ternary core material composed of titanium carbide, zirconium boride and silicon nitride provides high hardness, oxidation resistance, thermal shock resistance and excellent thermal stability; the silicon dioxide-aluminum oxide composite shell layer remarkably improves the oxidation resistance and reliability of the coating through the synergistic oxidation resistance and crack self-repairing function; the multi-metal oxygen cluster network endows the coating with excellent electrical conductivity, thermal conductivity and corrosion resistance; the intercalated montmorillonite enhances the crack resistance and oxidation resistance through a layered structure and embedded active ions; and the boron nitride coated vanadium carbide particles provide lubricity, oxidation resistance and wear resistance. Through collaborative optimization of multiple components, the comprehensive performance of the coating is comprehensively improved in the aspects of oxidation resistance, thermal conductivity, interface stability, high-temperature performance, mechanical performance and the like, so that the coating shows excellent long-term stability and functionality in an extreme environment.

The utility model relates to the technical field of power semiconductor devices, and discloses a super-junction VDMOS device resistant to static breakdown, which comprises a drain electrode and a grid electrode, an N + substrate is deposited on the upper surface of the drain electrode, a buffer layer is arranged above the N + substrate, a first N-epitaxial layer grows on the upper surface of the buffer layer, and a second N-epitaxial layer grows on the lower surface of the buffer layer. A first N-epitaxial layer is grown on the substrate, a P-region is formed in the first N-epitaxial layer through ion implantation diffusion, a second N-epitaxial layer grows on the first N-epitaxial layer, highly-doped P columns are arranged on the two sides in the second N-epitaxial layer, a heavily-doped region hole potential barrier region is arranged on one side of each P column, and a lightly-doped region hole potential well region is arranged on the lower side of one side of each P column. According to the VDMOS device, the thickness of the gate dielectric layer is increased, the total thickness of the gate dielectric layer is 100 nm, the single-particle shrinkage-through effect of the VDMOS device can be effectively improved, the gate dielectric layer is composed of 20 nm silicon dioxide and 80 nm trisilicon nitride, the single-particle shrinkage-through resistance characteristic of the device is further improved, and under the same gate voltage, gate-source electric leakage is reduced.

The invention discloses a combined passivation back contact battery which comprises an N-type silicon wafer, a second intrinsic amorphous silicon layer, a microcrystalline silicon layer, an anti-reflection layer, a second semiconductor opening region, a first semiconductor opening region and a transition region, the anti-reflection layer is a single-layer amorphous silicon carbonitride layer or a laminated structure composed of an amorphous silicon carbide layer and an amorphous silicon carbonitride layer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the transparent conductive film on the surface of the transition area to form an insulation groove. Amorphous silicon carbonitride or amorphous silicon carbide / amorphous silicon carbonitride laminated layers are adopted as the anti-reflection layers, so that reflection loss is reduced, the reliability and durability of the cell are improved, and the conversion efficiency of the cell is improved.

The invention relates to the technical field of high-performance ceramic preparation, in particular to a partial pressure sintering method of a silicon nitride ceramic chip, which comprises the stages of charging, negative pressure degreasing, partial pressure sintering, pressure sintering and rapid cooling: during charging, charging a green body containing a silicon nitride raw material and Y2O3 and MgO auxiliaries into a furnace, and exhausting air; in the negative-pressure degreasing stage, low-pressure nitrogen and staged heating are used for promoting formation and volatilization of an auxiliary liquid phase; volatile matters are released through stepped nitrogen partial pressure in the partial pressure stage; in the pressurizing stage, gradient increase of pressure from low pressure to 35 bar is achieved through phase change buffering, high-temperature densification, ultra-high-temperature homogenization and slow cooling, and precise pressure control is achieved by combining dynamic pressure-static pressure mode switching; according to the method, the problems of cracking, uneven density and the like of a traditional process are effectively solved, the ceramic chip yield and the dimensional precision are improved, the microstructure and the mechanical property are optimized, the high-temperature applicability and the thermal property are enhanced, meanwhile, the use amount of auxiliaries is reduced, energy consumption is reduced, and practicability and economical efficiency are achieved.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention discloses a silicon nitride ceramic based on a Yb2O3-MgSiN2 composite sintering aid and a preparation method of the silicon nitride ceramic, the silicon nitride ceramic comprises 93wt% of a Si3N4 matrix, 1-7wt% of Yb2O3 and the balance of MgSiN2, and the total mass of the Yb2O3 and the MgSiN2 as the composite sintering aid is 7wt%. The preparation method comprises the following steps: mixing the raw materials with absolute ethyl alcohol, then adding grinding balls, pouring the mixture into a polyethylene ball milling tank for ball milling, carrying out forced air drying treatment and grinding and sieving treatment on obtained slurry, and then putting sieved powder into a mold for SPS sintering. The problems that traditional silicon nitride ceramic is too high in sintering temperature, insufficient in grain boundary stability and the like are solved, and performance balance of low-temperature sintering, low oxygen content and high grain boundary stability of the silicon nitride ceramic is achieved under the industrial-grade production condition through the synergistic effect of material component innovation and process optimization; and a key material solution is provided for preparing the silicon nitride ceramic with good performance.

The invention relates to the technical field of optoelectronics, and discloses a compact mixed optical path high-density integration method of a multi-level waveguide composite structure, which comprises the following steps: S1, preparing a multi-material layer: sequentially depositing a silicon layer, a silicon nitride layer and a lithium niobate layer, preparing the silicon layer and the silicon nitride layer through a chemical vapor deposition process, preparing the lithium niobate layer through direct current magnetron sputtering, and preparing the multi-material layer; the refractive indexes of the silicon layer, the silicon nitride layer and the lithium niobate layer meet gradient distribution; s2, designing an interlayer coupling structure: forming a gradient waveguide coupler at an interface of adjacent material layers to realize interlayer light field transmission; and S3, stress regulation and control layer integration: arranging a buffer layer with a matched thermal expansion coefficient between the silicon layer and the silicon nitride layer. According to the invention, the silicon layer, the silicon nitride layer and the lithium niobate layer are sequentially deposited, and the refractive index of each layer satisfies gradient distribution, so that the problems of large light field reflection and scattering loss and low coupling efficiency caused by the fact that most of the traditional multilayer waveguide structures adopt single material layers are solved.

The invention provides a method for synergistically recovering all elements of crystal silicon cells of a decommissioned photovoltaic module, which comprises the following steps of: collecting large-particle waste crystal silicon cells and grinding the large-particle waste crystal silicon cells to obtain powder; the powder is leached with nitric acid, and leach liquor and impurity-removed silicon powder are obtained; leaching the silicon powder subjected to impurity removal by using an HF solution to remove a silicon nitride layer, and filtering, washing and drying to obtain the silicon powder meeting the industrial standard; the leaching solution is subjected to chlorination precipitation to obtain silver chloride and a leaching solution with silver removed, and after the silver chloride is filtered, the silver chloride is subjected to acid pickling and water washing to obtain silver chloride; sodium sulfide is added into the leaching solution after silver removal, metal in the leaching solution is precipitated, and a solution containing Al < 3 + > can be obtained after filtering; the method comprises the following steps: adding an alkaline substance into a solution containing Al < 3 + >, filtering to obtain an aluminum hydroxide precipitate, and washing the aluminum hydroxide precipitate to remove foreign ions adsorbed on the surface; one technical effect of the invention is that collaborative recovery and treatment of each element in the waste crystal silicon battery piece are realized.

The invention discloses high-toughness ultrathin flexible glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The ultrathin flexible glass is prepared from the following raw materials: silicon dioxide, aluminum oxide, lithium oxide, sodium oxide, magnesium oxide, a modified nano reinforced phase, a high-temperature melting regulator and cerium dioxide. The modified nano reinforced phase is prepared by the following steps: pre-treating silicon carbide and silicon nitride with hydrochloric acid, and mixing with nano zirconium oxide to obtain a mixture; and modifying the mixture with a silane coupling agent to obtain the modified nano reinforced phase. The high-temperature melting regulator is a mixture of lithium borate, sodium sulfate and lithium fluoride. The preparation method of the ultra-thin flexible glass comprises the following steps: preparing the modified nano reinforced phase, melting and homogenizing the glass, forming the glass substrate, and preparing the ultra-thin flexible glass. The ultra-thin flexible glass prepared by the invention has relatively high fracture toughness and structural rigidity, excellent flexibility and bending fatigue durability, and excellent thermal shock resistance.

The invention discloses a passivation contact cell structure and a preparation method thereof, the structure comprises a silicon substrate, and the back surface of the silicon substrate comprises a metal contact area and a non-metal contact area; a metal contact area on the back face of the silicon substrate is of a suede structure, and the suede structure is sequentially provided with a back face first tunneling oxide layer, a back face first doped polycrystalline silicon layer, a back face second tunneling oxide layer, a back face second doped polycrystalline silicon layer, a back face aluminum oxide layer, a back face silicon nitride layer and a back face electrode in a stacked mode from inside to outside. A non-metal contact area on the back face of the silicon substrate is of a polished face structure, and a first back face tunneling oxide layer, a first back face doped polycrystalline silicon layer, a back face aluminum oxide layer and a back face silicon nitride layer are sequentially arranged on the polished face structure in a stacked mode from inside to outside. According to the battery structure, parasitic absorption can be reduced, current gain is brought, diffusion of silver ions in electrode slurry can be inhibited, and metal recombination is improved; the interface contact resistance can be obviously improved, and the cell efficiency can be improved.

The invention discloses a preparation method of a high-temperature excitation coil based on an AMB process, and relates to the technical field of magnetic levitation, and the preparation method specifically comprises the following steps: S1, silicon nitride ceramic is perforated; s2, through hole filling and surface screen printing; s3, carrying out vacuum sintering on the metal foil and the silicon nitride ceramic; s4, performing coil patterning and surface treatment; s5, preparing a single-layer silicon nitride ceramic metal coil; s6, preparing a ceramic isolation sheet; s7, performing lamination and vacuum sintering; the magnet exciting coil prepared by the invention has relatively good reliability and long service life in a service environment of 550-600 DEG C.

The invention provides a TOPCon solar cell and a preparation method thereof, and relates to the technical field of cells, a sample is oxidized before aluminum oxide is deposited on the front side of a silicon wafer, so that silicon oxide layers with high quality are formed on the surface of a doped polycrystalline silicon layer and the surface of a boron-doped monocrystalline silicon layer; the aluminum oxide negative charge density and the silicon-hydrogen bond concentration on the surface of the TOPCon solar cell are increased, so that the stability of an aluminum oxide and silicon nitride laminated layer on the light receiving surface of the TOPCon solar cell under ultraviolet irradiation is improved, and the purpose of reducing ultraviolet induced degradation of the TOPCon cell is achieved.

The invention relates to a method for preparing a low-temperature silicon nitride film, which adopts a hot filament chemical vapor deposition technology and comprises the following steps of: placing a substrate on a support plate and feeding the support plate into a vacuum reaction chamber; introducing required process gas into the vacuum reaction chamber, wherein the process gas comprises any one or both of ammonia gas and nitrogen gas, hydrogen gas and silane; and dynamically adjusting the temperature of the hot filament, and depositing on the substrate to obtain the required silicon nitride film. In addition, the invention also relates to equipment for preparing the low-temperature silicon nitride film by adopting the method for preparing the low-temperature silicon nitride film. The hot filament chemical vapor deposition technology is adopted, the compact silicon nitride thin film can be prepared when the temperature of the substrate is higher than the room temperature, the application field of equipment is greatly widened, the silicon nitride thin film deposited under the condition that the temperature of the substrate is kept low can be produced under the proper air pressure, and the production efficiency is improved. And manufacturing of HBC cells and perovskite cells in the photovoltaic field is facilitated.

The invention belongs to the technical field of silicon nitride ceramic substrates, and particularly relates to a high-thermal-conductivity and high-breaking-strength silicon nitride substrate and a sintering method and application thereof. In order to simultaneously improve the thermal conductivity and the breaking strength of the existing silicon nitride ceramic substrate and ensure the stability and the consistency of the performance during the production of the silicon nitride substrate, the method comprises the following steps: coating the surface of a silicon nitride ceramic biscuit subjected to tape casting with isolation powder, carrying out nitrogen or air atmosphere glue removal treatment, and then sintering; in the sintering process, the cooling process is optimized, a multi-temperature heat preservation platform is arranged above the liquid phase conversion temperature, grain growth and grain boundary composition of the silicon nitride ceramic are regulated and controlled, grain size distribution of the silicon nitride ceramic is made to be more uniform, the grain boundary structure is made to be more optimized, and the heat conductivity coefficient and breaking strength of the substrate are remarkably improved. Meanwhile, the uniformity of a temperature field in the sintering furnace can be greatly improved through the sintering method, it is ensured that the product can reach the consistent performance standard in different areas, and the stability and reliability of the product are improved.

The invention relates to the technical field of stainless steel pneumatic cylinder barrels, and particularly discloses a wear-resistant stainless steel pipe for a pneumatic cylinder barrel and a preparation process thereof.The wear-resistant stainless steel pipe for the pneumatic cylinder barrel comprises the steps that firstly, a powder metallurgy method is adopted, tungsten carbide, cerium oxide, chromium nitride and other components are added into stainless steel powder, and the performance of a steel pipe base body is enhanced; the corrosion-resistant alloy layer is deposited on the surface of the steel pipe, so that the corrosion resistance, wear resistance and other properties of the steel pipe are enhanced, finally, a silicon nitride wear-resistant ceramic layer is sintered on the surface of the corrosion-resistant coating, and two lubricants of graphite and molybdenum sulfide are synthesized in gaps and holes of the wear-resistant ceramic layer. The defects on the ceramic surface are blocked; and the ceramic coating is endowed with a self-lubricating function.