8 results about "Trisilane" patented technology

The invention relates to a method and a device for gas-phase continuous preparation of disilane. The method comprises the following steps: S1, gas phase catalytic reaction-hydrogen separation integration: introducing a silane raw material into a tubular reactor filled with a palladium separation membrane, and carrying out a gas phase dehydrogenation condensation reaction under the action of the palladium separation membrane to obtain a component I and a component II; and S2, separation of silane, disilane and trisilane: carrying out three-stage separation on the component II to obtain disilane. The device comprises a catalytic reaction-separation integrated fixed bed device, a first distillation tower, a second distillation tower and a third distillation tower which are arranged along the material flow direction. The palladium separation membrane has the characteristics of catalytic activity and hydrogen separation function, the single-pass yield and selectivity of disilane are improved, generation of trisilane and deposition of silicon powder are inhibited, meanwhile, efficient utilization of raw materials is achieved, the reaction time is short, and no liquid or gas waste is generated in the whole process.

The invention discloses a preparation method and application of an alkoxy modified tackifier for an addition type organic silicon pouring sealant. The preparation method comprises the following steps: by taking 1, 1, 1, 3, 3, 3-hexamethoxy-2-(trimethoxysilyl) propyl silane and vinyl-terminated methyl-terminated polydimethylsiloxane as raw materials, reacting in the presence of a catalyst and under the condition of high temperature to synthesize tri-(trimethoxysilyl)-terminated methyl-terminated polydimethylsiloxane, and carrying out polycondensation and impurity removal on the tri-(trimethoxysilyl)-terminated methyl-terminated polydimethylsiloxane and olefin silane to prepare the alkoxy modified tackifier. 0.3-1.5 parts by mass of the tackifier is added, so that the bonding strength of the pouring sealant on multiple substrates can be remarkably improved, the weather resistance is excellent, the storage performance is stable, the viscosity and the fluidity of colloid are not influenced, and the tackifier is suitable for preparing the high-performance pouring sealant.

The invention discloses a system for purifying impurity gas in a disilane product synthesized from silane. The system comprises a membrane separation device, a fan, a first rectifying tower and a second rectifying tower which are communicated in sequence, the invention further relates to a process for purifying the impurity gas in the product of synthesizing the disilane from the silane, high-content hydrogen and other light components in the product gas of synthesizing the disilane from the silane are primarily separated from the silane, the disilane and the trisilane by adopting a membrane separation mode, then rectification separation is carried out, the purity of the recovered disilane is up to 99.995% or above, the purity of the recovered disilane is up to 99.995% or above, the purity of the recovered disilane is up to 99.995% or above, and the purity of the recovered disilane is up to 99.995% or above. The process is efficient, simple and low in energy consumption.

The invention provides a one-step synthesized low-temperature deposited silicon-carbon negative electrode material and a preparation method and application thereof, and the method comprises the following steps: S1, drying resin-based porous carbon powder, filling the dried resin-based porous carbon powder into an FBCVD reactor, and carrying out gas replacement with inert gas; s2, the reactor is heated to 360-480 DEG C, mixed gas composed of trisilane and an accelerant is introduced for silicon deposition, then introduction of the mixed gas is stopped, and inert gas is used for atmosphere replacement; s3, the reactor is heated to 520-600 DEG C, furfuryl alcohol-water-tributyl phosphate composite steam is introduced for carbon coating, and then inert gas is introduced for atmosphere replacement; s4, air with a certain concentration is introduced at the same temperature, and surface passivation is carried out; and S5, introducing the inert gas again to carry out atmosphere replacement, cooling and discharging to obtain the one-step synthesized low-temperature deposited silicon-carbon negative electrode material. The method has the advantages of simple reaction steps, low energy consumption, good deposition effect, difficult agglomeration of silicon particles, and uniform carbon coating.

The invention relates to the technical field of chemical synthesis, and particularly discloses a cresol trozole trisilane synthesis process, which comprises the following steps: by taking easily available UV-P in the market as a raw material, reacting with cheap and easily available propionyl chloride, reacting with triphenylphosphine to obtain alkene, and finally silanizing to obtain a target product. The whole reaction process has the advantages of cheap and easily available raw materials, low raw material cost, mild reaction conditions, no high-temperature 200 DEG C transposition reaction, strong reaction operability, high conversion rate, few by-products, almost equivalent reaction, no waste of raw materials, high conversion rate, total product yield of more than 80%, conventional three-step reaction, low industrialization requirement and high product yield, and is suitable for industrial production. The method has the advantages of no special requirements on production equipment, high production feasibility, less three wastes and low energy consumption, and is a synthetic route suitable for industrial production.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).

The utility model discloses a device for detecting trace trisilane in disilane, which is characterized in that a detection disc is internally provided with six sample injection holes, the six sample injection holes are sequentially a first interface, a second interface, a third interface, a fourth interface, a fifth interface and a sixth interface clockwise, the upper part in each sample injection hole is provided with a purge valve, and the lower part in each sample injection hole is provided with a purge valve. An air guide nozzle is fixedly connected to the middle of the interior of the sample injection hole, a sliding barrel arranged in the sample injection hole in a sliding mode is connected to the lower portion of the air guide nozzle through a spring, and a plunger located at the outlet position of the air guide nozzle and sliding along with the sliding barrel is arranged in the sliding barrel. By rotating the rotating disc, different communication combination modes of the six sample injection holes and the six communication holes can be realized, gas stored in the quantitative tube can be quickly replaced with disilane gas, so that the effect of quickly analyzing and detecting the gas is achieved, and by additionally arranging sealing pieces on the lower half parts in the sample injection holes, the gas leakage is avoided, and the influence on later gas detection is avoided. Therefore, the accuracy of gas detection is improved to a great extent.