15 results about "Trisilane" patented technology

The invention relates to the field of silane gas synthesis, in particular to a synthesis method for co-production of disilane and trisilane. The specific operation is as follows: monosilane is introduced into a metal pipeline reactor filled with a catalyst, a catalytic reaction is performed at the temperature of 450-550 DEG C and the pressure of 0.1-2 MPa to prepare a mixture of crude disilane and monosilane, and then the mixture enters an adsorption tower to collect disilane and trisilane with the purity greater than 99%. According to the method, the metal pipeline is used as a reactor, silane is pyrolyzed into SiH3 free radicals and H free radicals by regulating and controlling the temperature and ensuring the pressure and catalyst conditions, and the SiH3 free radicals and the H free radicals are mutually combined to form disilane and trisilane, so that the selectivity of the product is remarkably improved, and the purity of the collected product reaches 99% or above.

The invention relates to a method and a device for gas-phase continuous preparation of disilane. The method comprises the following steps: S1, gas phase catalytic reaction-hydrogen separation integration: introducing a silane raw material into a tubular reactor filled with a palladium separation membrane, and carrying out a gas phase dehydrogenation condensation reaction under the action of the palladium separation membrane to obtain a component I and a component II; and S2, separation of silane, disilane and trisilane: carrying out three-stage separation on the component II to obtain disilane. The device comprises a catalytic reaction-separation integrated fixed bed device, a first distillation tower, a second distillation tower and a third distillation tower which are arranged along the material flow direction. The palladium separation membrane has the characteristics of catalytic activity and hydrogen separation function, the single-pass yield and selectivity of disilane are improved, generation of trisilane and deposition of silicon powder are inhibited, meanwhile, efficient utilization of raw materials is achieved, the reaction time is short, and no liquid or gas waste is generated in the whole process.

The invention provides a fully-depleted silicon-on-insulator wafer and a manufacturing method thereof, and the method comprises the steps: providing a first substrate, enabling a first silicon-germanium layer, a second silicon-germanium layer and a first buried oxide layer to be sequentially stacked on the first substrate, and enabling the germanium content of the second silicon-germanium layer to be greater than 50%, and the second silicon-germanium layer to be a compressive strain silicon-germanium layer; providing a second substrate, wherein a second buried oxide layer is arranged on the second substrate; bonding the first substrate and the second substrate, and removing the first substrate and the first silicon germanium layer; etching to remove the second silicon germanium layer located in the N-type conductive type region to form an opening, and forming a first silicon layer which is a tensile strain silicon layer at the opening by using an ultralow-temperature lateral selective epitaxial process based on disilane silicon source gas or trisilane silicon source gas; the second silicon germanium layer located in the P-type conductive type region and the first silicon layer located in the N-type conductive type region form a fully depleted silicon-on-insulator (FDSOI) wafer, and the FDSOI wafer is provided with a compressive strain silicon germanium layer with high hole mobility and a tensile strain silicon layer with high electron mobility.

The invention discloses a preparation method and application of an alkoxy modified tackifier for an addition type organic silicon pouring sealant. The preparation method comprises the following steps: by taking 1, 1, 1, 3, 3, 3-hexamethoxy-2-(trimethoxysilyl) propyl silane and vinyl-terminated methyl-terminated polydimethylsiloxane as raw materials, reacting in the presence of a catalyst and under the condition of high temperature to synthesize tri-(trimethoxysilyl)-terminated methyl-terminated polydimethylsiloxane, and carrying out polycondensation and impurity removal on the tri-(trimethoxysilyl)-terminated methyl-terminated polydimethylsiloxane and olefin silane to prepare the alkoxy modified tackifier. 0.3-1.5 parts by mass of the tackifier is added, so that the bonding strength of the pouring sealant on multiple substrates can be remarkably improved, the weather resistance is excellent, the storage performance is stable, the viscosity and the fluidity of colloid are not influenced, and the tackifier is suitable for preparing the high-performance pouring sealant.

The invention discloses a system for purifying impurity gas in a disilane product synthesized from silane. The system comprises a membrane separation device, a fan, a first rectifying tower and a second rectifying tower which are communicated in sequence, the invention further relates to a process for purifying the impurity gas in the product of synthesizing the disilane from the silane, high-content hydrogen and other light components in the product gas of synthesizing the disilane from the silane are primarily separated from the silane, the disilane and the trisilane by adopting a membrane separation mode, then rectification separation is carried out, the purity of the recovered disilane is up to 99.995% or above, the purity of the recovered disilane is up to 99.995% or above, the purity of the recovered disilane is up to 99.995% or above, and the purity of the recovered disilane is up to 99.995% or above. The process is efficient, simple and low in energy consumption.

The application discloses a synthesis method of glycyl-beta-alanyl-L-histidine and belongs to the technical field of organic synthesis. The method comprises the following steps: (1) reacting L-muscle peptide, a silane protecting agent and an acid applying agent in a solvent A at 0-25 DEG C to obtain a trisilane-muscle peptide, wherein the silane protecting agent is selected from trimethylchlorosilane or hexamethyldisilazane, the acid applying agent is selected from triethylamine or diisopropylethylamine, and the molar ratio of the L-muscle peptide to the acid applying agent is 1:4.0-6.5; (2) condensing the trisilane-muscle peptide with phthalylglycine chloride to obtain phthalylglycyltrisilane-muscle peptide; (3) quenching the phthalylglycyltrisilane-muscle peptide by adding water, adjusting the pH value of the aqueous phase to 2-3 by adding acid, and hydrolyzing to obtain phthalylglycylmuscle peptide; and (4) hydrazinolysis of the phthalylglycylmuscle peptide to obtain glycyl-beta-alanyl-L-histidine. The method has the advantages of high yield, simple process and high purity.

The invention provides a one-step synthesized low-temperature deposited silicon-carbon negative electrode material and a preparation method and application thereof, and the method comprises the following steps: S1, drying resin-based porous carbon powder, filling the dried resin-based porous carbon powder into an FBCVD reactor, and carrying out gas replacement with inert gas; s2, the reactor is heated to 360-480 DEG C, mixed gas composed of trisilane and an accelerant is introduced for silicon deposition, then introduction of the mixed gas is stopped, and inert gas is used for atmosphere replacement; s3, the reactor is heated to 520-600 DEG C, furfuryl alcohol-water-tributyl phosphate composite steam is introduced for carbon coating, and then inert gas is introduced for atmosphere replacement; s4, air with a certain concentration is introduced at the same temperature, and surface passivation is carried out; and S5, introducing the inert gas again to carry out atmosphere replacement, cooling and discharging to obtain the one-step synthesized low-temperature deposited silicon-carbon negative electrode material. The method has the advantages of simple reaction steps, low energy consumption, good deposition effect, difficult agglomeration of silicon particles, and uniform carbon coating.

Provided is a method for producing a higher silane having a high trisilane selectivity even when a lower silane is reacted with a catalyst for a long time.　The present invention includes a method for producing a higher silane, the method involving bringing a porous oxide and a lower silane into contact with each other and converting the lower silane into a higher silane having a higher number of silicon atoms than the lower silane, wherein the higher silane contains trisilane, the cumulative reaction time is 200 to 10,000 hours (exclusive of 200 hours), the temperature at the time of contact between the porous oxide and the lower silane is 100 to 400 °C, and the retention time represented by formula (1) is 80 to 150 seconds (exclusive of 150 seconds).　(1): Retention time [sec]=catalyst amount [L]×((pressure [MPaG]+0.101325) / 0.101325)×(273.15 / (temperature [°C]+273.15))×(3600 / gas supply amount [NL / h]) (In formula (1), the catalyst amount represents the amount of the porous oxide to be brought into contact with the lower silane, the pressure and the temperature represent a pressure and a temperature when the porous oxide and the lower silane are brought into contact with each other, and the gas supply amount represents the supply amount per unit time of the raw material gas containing the lower silane when the lower silane is brought into contact with the porous oxide.

The invention relates to the technical field of chemical synthesis, and particularly discloses a cresol trozole trisilane synthesis process, which comprises the following steps: by taking easily available UV-P in the market as a raw material, reacting with cheap and easily available propionyl chloride, reacting with triphenylphosphine to obtain alkene, and finally silanizing to obtain a target product. The whole reaction process has the advantages of cheap and easily available raw materials, low raw material cost, mild reaction conditions, no high-temperature 200 DEG C transposition reaction, strong reaction operability, high conversion rate, few by-products, almost equivalent reaction, no waste of raw materials, high conversion rate, total product yield of more than 80%, conventional three-step reaction, low industrialization requirement and high product yield, and is suitable for industrial production. The method has the advantages of no special requirements on production equipment, high production feasibility, less three wastes and low energy consumption, and is a synthetic route suitable for industrial production.

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600° C. or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7Cl), diiodosilane (SiH2I2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCl3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCl3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCl4), carbon tetrachloride (CCl4), and hexachlorodisilane (Si2Cl6).

Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing processes, more particularly, to precursor chemistries and methods of depositing silicon-containing films for forming semiconductor devices. In one or more embodiments, a method includes co-flowing a silicon-containing precursor with a dopant precursor into a processing chamber at a temperature of 600 °C or less to deposit an epitaxial layer over a substrate disposed within the processing chamber. The silicon-containing precursor is selected from a list consisting of silane (SiH4), disilane (Si2H6), trisilane(Si3H8), tetrasilane (Si4H10), monochlorotrisilane (Si3H7CI), diiodosilane (SiH2l2), and dibromosilane (SiH2Br2). The dopant precursor selected from a list consisting of phosphine (PH3), phosphorus trichloride (PCI3), phosphorus tribromide (PBr3), tert-butylphosphine (TBP), tri-tert-butylborane ((tBu)3B), tert-butylarsine (TBAs), arsenic trichloride (AsCI3), trisilylphosphine (TSP), triisopropylborane (iPr)3B, tert-butylsilane ((tBu)SiH3), isopropylsilane ((iPr)SiH3), tetrakis(tert-butyl)tin ((tBu)4Sn), tetrakis(isopropyl)tin ((iPr)4Sn), tetrakis(tert-butyl)germane ((tBu)4Ge), tetrakis(isopropyl)germane ((iPr)4Ge), germanium tetrachloride (GeCI4), carbon tetrachloride (CCI4), and hexachlorodisilane (Si2CI6).

The invention belongs to the technical field of antifouling paint treatment, and discloses a trisilane co-hydration regulation and control mussel type functional antifouling paint treatment method which comprises the following steps: step 1, preparing materials, step 2, synthesizing sulfobetaine silane, namely SBSi, step 3, preparing silane / TA coatings with different compositions, step 4, representing, step 5, measuring surface force, and step 6, evaluating antifouling performance. And 7, carrying out membrane separation on the oil-in-water emulsion. The reaction activity between APTES and TA is regulated and controlled by introducing FAS-17, the reaction rate of surface coating deposition is regulated and controlled, the compactness of the generated anti-fouling coating is controlled according to the requirement of a membrane base material pore structure, and then the composite coating with a dual anti-fouling mechanism is prepared by introducing FAS-17 with low surface energy and a hydrophilic SBSi polymer. The antifouling agent has double synergistic antifouling effects of promoting desorption of pollutants from the surface and preventing adsorption of the pollutants.

The utility model discloses a device for detecting trace trisilane in disilane, which is characterized in that a detection disc is internally provided with six sample injection holes, the six sample injection holes are sequentially a first interface, a second interface, a third interface, a fourth interface, a fifth interface and a sixth interface clockwise, the upper part in each sample injection hole is provided with a purge valve, and the lower part in each sample injection hole is provided with a purge valve. An air guide nozzle is fixedly connected to the middle of the interior of the sample injection hole, a sliding barrel arranged in the sample injection hole in a sliding mode is connected to the lower portion of the air guide nozzle through a spring, and a plunger located at the outlet position of the air guide nozzle and sliding along with the sliding barrel is arranged in the sliding barrel. By rotating the rotating disc, different communication combination modes of the six sample injection holes and the six communication holes can be realized, gas stored in the quantitative tube can be quickly replaced with disilane gas, so that the effect of quickly analyzing and detecting the gas is achieved, and by additionally arranging sealing pieces on the lower half parts in the sample injection holes, the gas leakage is avoided, and the influence on later gas detection is avoided. Therefore, the accuracy of gas detection is improved to a great extent.

The utility model provides a mercaptopropyl silane separator. The mercaptopropyl silane separator comprises: a bottom plate; the heating equipment is fixedly connected to the position, close to one side, of the top of the bottom plate, a separator is installed at the top of the heating equipment through four supporting bolts, a liquid inlet pipe is installed at the top of the separator through a cover, a rectification pipe is installed at the top of the cover, and a heat conduction pipe is installed at the top of the heating equipment; a resistance heating pipe is installed in the heat conduction pipe, a plurality of heat conduction rings are installed on the outer surface of the heat conduction pipe, and heat conduction plates are installed on the outer surfaces of the heat conduction rings; the membrane separation tank is fixedly connected to the position, close to the other side, of the top of the bottom plate. According to the mercaptopropyl silane separator provided by the utility model, the heating temperature of mercaptopropyl silane separation can be accurately controlled according to requirements through the structure, and meanwhile, the separation efficiency and the separation effect of mercaptopropyl silane are improved through synchronous operation of a separation membrane in the membrane separation tank and a rectification separation method.

The invention belongs to the technical field of special gas separation, and particularly relates to a disilane concentration device and a disilane concentration method. The device comprises a booster pump, a hydrogen separation device and a pressure swing adsorption tower which are sequentially arranged along the material flow direction. The concentration method comprises the following steps: firstly, increasing the pressure of disilane-containing raw material gas synthesized by a silane thermal polymerization method, and then separating hydrogen in the disilane-containing raw material gas to obtain dehydrogenated mixed gas; and carrying out pressure swing adsorption on the dehydrogenated mixed gas, adsorbing disilane and propyl silane, finally desorbing to obtain concentrated disilane gas, and recycling the rest of gas. According to the invention, disilane concentration with low energy consumption and high recovery rate is realized, and an efficient technical scheme is provided for semiconductor material manufacturing.