41 results about "Disilane" patented technology

The invention discloses a disilane mixed gas dissolving and mixing system and a control method, and relates to the technical field of gas mixing preparation, the disilane mixed gas dissolving and mixing system comprises seven modules, a storage module realizes accurate pressure control through a honeycomb gas storage tank matrix, and the tank wall adopts a nano composite structure for corrosion prevention; the premixing module forms a chaotic flow field by using a double-helix micro-channel and pulse injection; the reaction module is combined with supercritical and electromagnetic resonance to accelerate the reaction; the monitoring module fuses multispectral detection; the control system is based on deep reinforcement learning, in addition, a gradient condensation-membrane distillation separation module, a bionic safety interlocking module and other modules are further arranged, and all the modules cooperate to achieve efficient mixing and production. According to the device and the method, high-precision preparation of disilane mixed gas, precise pressure-controlled material storage, molecular-level efficient mixed reaction, multispectral precise monitoring, intelligent regulation and control, stability guarantee, high safety interlocking and intelligent maintenance are realized, faults can be reduced, the product quality and the production efficiency are improved, and the cost is reduced.

The present invention relates to a purification method, device and application for efficiently obtaining silane and disilane. The method adopts a single-stage multi-layer adsorption combined with a first-stage multi-layer separation tower distillation method to thoroughly remove impurities such as hydrogen, nitrogen, oxygen, ammonia, metals, etc. in a silane and disilane mixed gas, so that the total impurity content is less than 1ppm, and silane and disilane gases with a purity of 99.9999% or above are obtained at the same time. The device of the present invention mainly comprises a multi-layer adsorption tower (5), a regeneration gas storage tank (16), a multi-layer separation tower (23), a silane product storage tank (28) and a disilane product storage tank (35). The device of the present invention is suitable for the separation of two substances with a boiling point difference of 30°C or above, and is particularly suitable for the separation of silane and disilane. The present invention simultaneously obtains high-purity silane and disilane with a purity of 99.9999% or above. The method is easy to realize industrial production.

The utility model discloses a preparation device for purifying disilane, which comprises a preparation box, a purification component and a collection component, the purification component is fixedly arranged in the preparation box, the collection component is fixedly arranged on one side of the preparation box, the purification component is arranged to facilitate the purification of disilane, and the collection component is arranged on the other side of the preparation box. Waste gas generated after purification is collected and used through a collection assembly, the purification assembly comprises a collection box, a condenser, a partition plate, a refrigerator, a temperature probe and a temperature measurer, the collection box is fixedly installed in the preparation box, and the condenser is fixedly installed on one side of the collection box; according to the device, gas is guided into the preparation box, the spiral guide plate is used for removing impurities in the slowly entering gas, the gas enters the preparation box and then is subjected to primary purification through the collection box so as to remove heavy component impurities, hydrogen is further separated from the gas by using the adsorption filter screen, and then secondary purification is carried out, so that the purity of the gas is improved. Therefore, disilane with better purity is obtained.

The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a semiconductor material from high-purity quartz sand. The method comprises the following steps: firstly, grafting and modifying the surface of quartz sand through 3-aminopropyltriethoxysilane, complexing metal impurities by using amino functional groups, and improving the purity of a precursor from the source; secondly, hydrogen / deuterium gas pulse back-and-forth switching is adopted, surface hydrogen atom dynamics is regulated and controlled through the isotope effect, and an etching-nucleation synergistic window is created; and finally, through sequential alternate supply of silane and disilane, time separation of a weak bond etching period and a high-activity nucleation period is realized. The prepared semiconductor material shows excellent performance, and compared with a traditional method, the technical problem of low-temperature deposition of a high-quality semiconductor film is solved through full-process optimization from a material source to a deposition end.

The invention discloses a low-expansion silicon-carbon negative electrode material and a preparation method thereof, and belongs to the technical field of secondary batteries. The invention relates to a preparation method of a low-expansion silicon-carbon negative electrode material. The preparation method comprises the following steps: S1, depositing SiO2: depositing porous carbon for the first time by adopting silane with at least two ethyoxyl groups or methoxyl groups; then calcining to obtain a SiO2 deposition layer; s2, silicon deposition: carrying out secondary deposition on the material obtained in the step S1 by adopting monosilane, disilane and / or trichlorosilane; and S3, carbon coating: carrying out carbon coating on the material obtained in the step S2 by using a carbon source gas. According to the low-expansion silicon-carbon negative electrode material disclosed by the invention, porous carbon is firstly subjected to deposition modification by utilizing SiO2 deposition, so that the overall structural strength of a framework is improved; after silane deposition, silicon of the second deposition layer and silicon dioxide of the first deposition layer can react to generate SiO, and volume expansion of silicon crystal grains can be relieved.

The invention relates to a method and a system for recovering hydrogen in mixed gas by using a pressure swing adsorption and membrane separation method. The method comprises the following steps: S1, preliminary impurity removal: carrying out multi-layer adsorption impurity removal on mixed gas containing silane, disilane and hydrogen, and cooling to 22-28 DEG C; s2, pressure swing adsorption: feeding the mixed gas subjected to primary impurity removal into a pressure swing adsorption device, wherein an adsorbent in the adsorption device is modified activated carbon which is activated at high temperature and is loaded with 3-5% of copper oxide on the surface; s3, membrane separation and adsorption: the mixed gas passing through the pressure swing adsorption device enters a filter and a dryer, and finally passes through a membrane separation device, silane and disilane are collected on the enrichment side of the membrane separation device for further purification, and hydrogen is collected on the permeation side of the membrane separation device for further purification. According to the invention, a process of combining pressure swing adsorption and a membrane separation method is adopted, the advantages of the two technologies are fully exerted, and efficient separation of silane, disilane and hydrogen is realized.

The utility model relates to the technical field of chemical equipment, and discloses a disilane preparation device, which comprises a mounting plate, the supporting block is arranged on the mounting plate; the clamping sleeve is fixedly arranged above the supporting block; the reaction kettle is fixedly arranged in the jacket; the feeding hole is formed in the reaction kettle, and a feeding pipe is fixedly arranged in the feeding hole; the outlet is formed in the reaction kettle and is formed in one side of the feeding hole, and a discharging pipe is fixedly connected to the outlet; the gas inlet hole is formed in the reaction kettle, and the output end of a gas compressor is fixedly connected to the interior of the gas inlet hole; the stirring mechanism is arranged in the reaction kettle; the slag discharge pipe is communicated with the jacket and the reaction kettle, and the slag discharge pipe is arranged at the bottom of the reaction kettle; the rectifying tower is communicated with the discharging pipe, the top of the rectifying tower is connected with a condenser, the bottom of the rectifying tower is connected with a reboiler, and the rectifying tower is communicated with a storage tank. The disilane preparation device disclosed by the utility model is used for solving the problems of the existing equipment.

The invention discloses a high-purity disilane production system and a high-purity disilane production method. The system comprises a reactor (100), a primary gas-solid separator (200), supercharging equipment (300), a secondary gas-solid separator (400), a gas separation membrane assembly (500), a light component removal tower (600) and a product tower (700) which are sequentially connected through pipelines. The core of the invention lies in that a two-stage gas-solid separation structure is adopted to effectively solve the contradiction between the low-pressure operation of the reactor and the high-pressure feeding of the membrane module, and core equipment is fully protected; meanwhile, a mixed matrix molecular sieve membrane is arranged in the gas separation membrane assembly, and screening of hydrogen and monosilane molecules can be efficiently achieved, so that the reaction byproduct hydrogen is removed through a one-step method. According to the method, monosilane is taken as a raw material, after reaction synthesis, primary dust removal, pressurization, fine dust removal, membrane-method dehydrogenation and rectification separation are sequentially carried out on a product, a high-purity disilane product is finally obtained, and unreacted monosilane is returned to a system for cyclic utilization.

To provide a method for producing higher silanes that has high selectivity for disilanes even when a lower silane and a catalyst are reacted for a long time.　The present invention includes a method for producing higher silanes in which a porous oxide and a lower silane are brought into contact to convert the lower silane into a higher silane having more silicon atoms, wherein the higher silanes include disilanes, the estimated reaction time is from more than 200 hours to 10,000 hours, the temperature at which the porous oxide and lower silane are brought into contact is 100-400°C, and the retention time represented by formula (1) is from 5 seconds to less than 80 seconds.　Retention time [sec] = amount of porous oxide [L] × ((pressure [MPaG] + 0.101325) / 0.101325) × (273.15 / (temperature [°C] + 273.15)) × (3600 / amount of gas supplied [NL / h]) … (1) (In formula (1), the amount of porous oxide represents the amount of porous oxide brought into contact with the lower silane, the pressure and temperature each represent the pressure and temperature at which the porous oxide and lower silane are brought into contact, and the amount of gas supplied is the amount of raw material gas containing the lower silane supplied per unit time during contact with the porous oxide.)

This utility model discloses a trace ammonia analysis system for the synthesis and purification process of silane, relating to the field of trace ammonia analysis technology. The system includes: a valve with a first, second, third, fourth, fifth, and sixth interface; the second interface is a carrier gas inlet, the fifth interface is a sample gas inlet, and the sixth interface is a vent hole; a quantitative tube, one end of which is fixedly connected to the first interface and the other end to the fourth interface; and a chromatographic column, one end of which is fixedly connected to the third interface and the other end of which is fixedly connected to an MS quadrupole mass detector. The trace ammonia analysis system for the synthesis and purification process of silane provided by this utility model, using MS for the analysis of trace impurities, has the advantages of high sensitivity, a universal detector for all components, and the ability to vent analytical errors caused by the additional equipment of silane through backflushing technology in the gas path design, resulting in accurate quantification and effectively reducing analysis time.

The utility model relates to the technical field of silane production, in particular to an electronic-grade silane system device which comprises a partition plate tower, the partition plate tower is communicated with a purification furnace through a first pipeline, the purification furnace is connected with a rectifying tower through a second pipeline, and a filter is arranged on the second pipeline. Process gas prepared by a silicon-magnesium method reaction kettle is conveyed to the middle of a partition plate tower, light component impurities such as H2 and N2 are removed at the top of the partition plate tower, and after non-metal hydride and high-order silane components such as silane and disilane are removed at the bottom of the tower, crude silane is extracted from the tower side and is introduced into a purification furnace through a first pipeline, and by means of the property that the thermal stability of the silane and the hydride impurities is different, the high-order silane is obtained. And adjusting the temperature of the purification furnace to a proper temperature, carrying out thermal decomposition on hydride impurities, filtering a silane gas phase obtained in the purification furnace through a filter on a second pipeline, introducing the filtered silane gas phase into a rectifying tower for refining, and finally extracting a liquid phase, thereby obtaining the high-purity electronic-grade silane.

The invention belongs to the technical field of integrated circuit manufacturing, and particularly relates to a preparation method of a SiCN diffusion barrier layer, and the SiCN diffusion barrier layer is prepared from trimethylsilane, deuterated ammonia and disilane through a plasma vapor deposition method. The deuterated ammonia can influence the microstructure and composition of the material in the process of participating in the preparation of the SiCN diffusion barrier layer, so that the defect degree is lower after annealing treatment. Meanwhile, the introduction of disilane promotes the uniform distribution of each reaction gas in the chamber, and reduces the local concentration difference, thereby enabling the surface of the barrier layer to be smoother and smoother, and effectively improving the surface flatness of the barrier layer.

The invention relates to a process for the production of monosilanes of formula H4-nSiCln with n being 2, 3 or 4 comprising the step of subjecting a starting material composition comprising one or more disilanes with formula HxSi2Cl6-x containing at least one Si—H bond and optionally further silanes, in particular the side-product mixture of the Siemens Process or fractions thereof, to a reaction with a reaction-promoting agent chosen from—ether / HCI solutions—amines, phosphines, or mixtures thereof—ammonium halides, phosphonium halides, or mixtures thereof at temperatures below 200° C.

The utility model discloses a disilane multifunctional rectification device which comprises a main rectification box, a rectification assembly and a recovery assembly, the rectification assembly is fixedly installed in the main rectification box, the recovery assembly is fixedly installed on the outer side of the main rectification box, and disilane is rectified through the rectification assembly. Rectified disilane is recycled through the recycling assembly, so that disilane leakage is avoided, and the rectifying assembly comprises a refrigerator, a refrigerating pipe, a control valve, a filtering box, a filtering net and a material guiding pipe. Disilane rectified for the first time passes through the filter screen and then enters the storage box through the filter box, fine impurities in mixed liquid are intercepted again when the disilane passes through the filter screen, the filtering performance is remarkably improved, the purity of rectified products is guaranteed, and therefore the product quality is guaranteed; and residual flow gas guided out after rectification is collected through the recovery bottle, so that damage caused by exposure of the gas is avoided.

A process includes the steps: (a) determining an effective size σ of a silicon precursor; (b) providing a population of optimised particulate porous frameworks comprising micropores and / or mesopores a

A disilane preparation device and a disilane preparation method. The disilane preparation device comprises a reactor (1), a heating part (2), a high-voltage electrode (3), and a high-voltage pulse power supply (4). The reactor (1) comprises a dissociation part (11) and a reaction part (12) that are communicated, and the dissociation part (11) is arranged upstream of the reaction part (12); the dissociation part (11) is provided with a dissociation inlet (111), and the reaction part (12) is provided with a reaction inlet (121) and a reaction outlet (122); the high-voltage electrode (3) is arranged in the dissociation part (11), and the high-voltage pulse power supply (4) is configured to supply power to the high-voltage electrode (3), so as to dissociate a silane gas introduced into the dissociation part (11) through the dissociation inlet (111) to generate active ions; and a catalyst (5) is provided in the reaction part (12), the heating part (2) is configured to heat the reaction part (12), and the active ions introduced into the reaction part (12) from the dissociation part (11) react with a silane gas introduced into the reaction part (12) through the reaction inlet (121) to generate disilane. The disilane preparation device enables disilane preparation, improves the production capacity of disilane, simplifies the process flow, and reduces costs.

The invention provides a high-conductivity lithium iron phosphate positive electrode material and a preparation method thereof, and the method comprises the following steps: depositing disilane on the surface of the lithium iron phosphate positive electrode material, and carrying out chemical reaction on the deposited disilane and a tungsten source to generate a tungsten film. The tungsten source is tungsten hexafluoride. The deposition mode is atomic layer deposition, and the deposition period is 1-30. Tungsten is highly uniformly dispersed on the surface of the lithium iron phosphate positive electrode material, compared with a traditional method that the surface of the lithium iron phosphate positive electrode material is coated with carbon, higher conductivity is achieved, meanwhile, the surface of the lithium iron phosphate positive electrode material is highly uniformly deposited and coated with tungsten, and the thickness of a tungsten film is accurate and adjustable. The preparation method for depositing and coating tungsten on the surface of the lithium iron phosphate positive electrode material is simple, high in automation degree and very good in repeatability; from the perspective of easy preparation, low cost and high rate performance, the invention has a very good application prospect in the field of lithium ion batteries.

The present invention provides a method for preparing disilane and its application. The method comprises the following steps: introducing monosilane gas and other gases into a gas mixing device to be uniformly mixed, and then entering a plasma generating device, controlling the plasma electrical parameters. Finally, the reaction product disilane is taken out and enters a collection cold trap, and is filled into a steel cylinder to obtain a disilane product with a conversion rate of 90%. After the disilane prepared by this method is purified by secondary rectification, it is easy to obtain disilane with a purity of 99.999%. Then, a polysilicon thin film is prepared by LPCVD, and an Si layer grown under lower process temperature conditions is obtained.

The invention provides a method and a device for preparing electronic-grade disilane. The device mainly comprises a multi-stage low-temperature precise rectification system and a targeted adsorption system. Wherein the multi-stage low-temperature rectification system is mainly composed of multi-stage low-temperature rectification equipment, an equipment instrument and a nonlinear control theory module, the multi-stage low-temperature rectification equipment can realize process conditions which are relatively mild in relative temperature, the equipment instrument can realize precise control, and the targeted adsorption system is composed of adsorption materials suitable for adsorbing different impurity components in disilane. A crude disilane product is firstly added into a multi-stage low-temperature precision rectification system for precision rectification separation, and impurity components except for impurity components with complex physical properties such as near boiling or azeotropy and trace impurity components such as metal ions in the crude disilane product are removed, so that the variety and content of the impurity components in the crude disilane product are greatly reduced; the crude disilane product with most impurity components removed through multi-stage low-temperature precise rectification is added into the targeted adsorption system again, different special adsorption materials are used for targeted separation and removal of different impurity components, the impurity components are thoroughly removed, and high-purity electronic-grade disilane is prepared. According to the method, most of impurity components in the crude disilane product can be thoroughly removed through multi-stage low-temperature precision rectification, the variety and content of the impurity components in the crude disilane product are reduced, energy consumption can be reduced, the impurity components are thoroughly removed through different special adsorption materials, and high-purity electronic-grade disilane can be obtained.

The invention relates to the technical field of disilane purification, and particularly discloses a high-purity disilane purifying and filtering device which comprises a distillation box, a heating mechanism is arranged at the bottom of the distillation box, the heating mechanism is electrically connected with a controller, and a collecting part is arranged outside the distillation box; the collecting part comprises a first condensing pipe which is fixedly connected, the end part of the first condensing pipe is fixedly connected with a collecting box, and the collecting box is used for collecting disilane liquid dripping from the first condensing pipe; and an impurity storage box is arranged above the distillation box. According to the high-purity disilane purifying and filtering device provided by the invention, part of low-boiling-point impurities are cooled by the impurity storage box for a period of time, the impurities are in a liquid state to form a bottom layer, the upper layer is volatile disilane, and then the ejector rod drives the reciprocating plate to move up and down, so that the disilane on the upper layer enters the liquid in the collecting box through the gas guide pipe; the gas enters the liquid in the form of bubbles, and finally secondary extraction of disilane in the low-boiling-point impurities is completed, so that the extraction amount of disilane is increased.

The invention discloses an analysis system and an analysis method for impurities in high-purity disilane. The analysis system comprises a first ten-way valve, a first quantitative tube, a first chromatographic column, a first six-way valve, a second quantitative tube, a second chromatographic column, a second six-way valve, a first PDD detector, a third chromatographic column, a second twenty-way valve, a third quantitative tube, a fourth chromatographic column, a third six-way valve, a fifth chromatographic column and a second PDD detector. According to the analysis system and the analysis method for the impurities in the high-purity disilane, a five-valve five-column double-detector configuration mode is adopted, different impurities are distributed on different detectors, the working state of a multi-way valve is controlled, and the valve switching time is regulated and controlled, so that sample introduction of the same gas path and separation and analysis of multiple gas paths are realized, and the detection accuracy is improved. Therefore, analysis results of all impurities in the sample gas can be obtained in one analysis process, main components or silane impurities can be reversely blown out, interference of a main peak background is removed, and the efficiency and accuracy of the analysis process are improved.

According to the preparation device of the electronic-grade disilane, high-order silane is generated on the basis of pyrolysis polymerization reaction of crude monosilane, after the high-order silane is primarily separated by the circulating tower, heavy components are rectified twice to remove light components and heavy components respectively, and then are purified twice to remove water, oxygen and metal ions to obtain the electronic-grade disilane, so that continuous production is realized, the production cost is reduced, and the production efficiency is improved. And common unit equipment combination can be directly used, so that the cost is low, the efficiency is high, and a new choice is provided for preparation of electronic-grade disilane.

The invention relates to the technical field of gas separation and purification, in particular to a method for recycling hydrogen in silane and disilane mixed gas through a membrane separation method. Comprising the following steps: S1, pretreating mixed gas containing 20%-25% of silane, 10%-15% of disilane and 60%-70% of hydrogen to remove solid particles and moisture; s2, the pretreated mixed gas is introduced into a membrane separation device, silane and disilane are collected on the enrichment side of the membrane separation device for further rectification, and hydrogen is collected on the permeation side of the membrane separation device for further purification. According to the method, hydrogen recovery and silane and disilane enrichment can be efficiently achieved, the hydrogen recovery rate is high, and compared with a traditional separation method, the method is low in energy consumption and has remarkable economic benefits and environmental protection benefits.

A manufacturing method of a semiconductor device includes depositing, using a first atomic layer deposition, a first thin poly silicon layer on an active area, in which the active area includes a trench; depositing, using a second atomic layer deposition, a second thin poly silicon layer on the active area; and depositing, using a chemical vapor deposition, a poly silicon layer on the active area to form a poly silicon structure, in which a gas for the chemical vapor deposition includes disilane, a thickness of the poly silicon layer in a bottom of the trenches is substantially zero.

The utility model discloses a recovery device for disilane, which comprises a gas cylinder main body, a recovery assembly and an adsorption assembly, one side of the gas cylinder main body is fixedly provided with the recovery assembly, one side of the recovery assembly is fixedly provided with the adsorption assembly, and gas in the gas cylinder main body is recovered and filtered through the recovery assembly. The adsorption assembly is used for purifying and adsorbing waste gas, the recovery assembly comprises a first communicating pipe, an extraction valve, a recovery box, a first filter screen, a second filter screen and a recovery box, and the first communicating pipe is fixedly mounted above one side of the gas cylinder main body; according to the disilane recycling device, when gas enters the recycling box, due to the fact that the speed is increased, the gas reacts with a reaction solution in the recycling box more sufficiently, disilane is filtered in multiple groups through cooperation of multiple groups of filter screens, impurities of the filtered disilane are used, the recycling efficiency is higher, an adsorption plate is fixedly connected to the inner wall of the purification box, and the gas can be recycled conveniently. The gas is in full contact with clear water.

The utility model discloses a sampling device for disilane preparation, which comprises a processing table, a main engine base and a sampling component, the main engine base is fixedly mounted on one side of the top of the processing table, the sampling component is fixedly mounted on one side of the main engine base, and the sampling component is arranged to facilitate sampling preparation of disilane. The sampling assembly comprises a sampling channel, a sampling tank, a residue storage bottle, a vacuum pump, an air extracting pump and an extracting opening, the sampling channel is fixedly installed on one side of the machining table, the sampling tank is fixedly arranged below one side of the sampling channel, and the residue storage bottle is fixedly installed on one side of the bottom of the sampling channel; a vacuum pump is fixedly mounted on one side of the top of the sampling channel; residual gas in a pipeline in the sampling process is not easy to be thoroughly removed, the residual storage bottle and the vacuum pump are arranged in the sampling channel, internal redundant gas is sucked and stored through the residual storage bottle, air circulation in the channel is conveniently kept, and the sampling purity is guaranteed.

The present invention discloses a disilane rectification processing device, which includes a processing box and a distillation tank arranged in the processing box. A plurality of processing spaces are separated in the processing box by a sealing plate, and a frame assembly for receiving packing is arranged in each of the processing spaces; a stirring assembly and a cleaning assembly are also included, both of which are arranged in the distillation tank; a transmission assembly is also included, which is arranged on the processing box. After the stirring rod rotates and cooperates with the transmission mechanism to drive the frame assemblies in each processing space to open and close in sequence, the packing in the frame assembly of this layer is discharged, and the packing in the upper side falls into this layer for supplementary use. Moreover, the packing in the bottommost frame assembly directly falls into the cleaning assembly for thorough cleaning, and the successively opened frame assemblies will be separately cleaned by the flushing assembly to ensure that the packing is thoroughly and evenly flushed, so as to ensure that the disilane is thoroughly purified before being discharged from the distillation tank.

The invention relates to the technical field of photovoltaic materials, in particular to modified glass powder for a TOPCon battery fine grid and a preparation method thereof.The modified glass powder is at least prepared from, by weight, 30-50 parts of precious metal-loaded main glass powder, 30-50 parts of auxiliary glass powder, 15-25 parts of an ethanol water solution, 0.1-0.5 part of a surfactant and 0.5-1 part of a disilane modifier, the disilane modifier comprises amino silane and C12-C18 long-chain alkylsilane, and the noble metal nanoparticles are loaded to synergistically modify with disilane, so that the surface energy of the glass powder is reduced to 18-22 mN / m while the low-temperature sintering characteristic is maintained, and the inorganic glass powder, the organic carrier and the silver powder achieve the optimal matching effect.

A novel tubular reactor device for producing ethylsilane comprises a tubular reactor, which is of a split structure and comprises an upper cover, a barrel and a lower cover which are detachably and sealingly connected from top to bottom, and has a feeding port and a discharging port, the feeding port is sequentially communicated with a material mixer and a material preheater which are located outside the tubular reactor, and a rotary flow gas distributor is connected to the lower side of the inner side of the feeding port through a connecting pipe; the rotary flow gas distributor is detachably connected to the upper part of the barrel through a support frame, and the upper end of the support frame is clamped to the inner side of the connection between the upper cover and the upper end surface of the barrel. The novel device strengthens the rotation of mixed gas, avoids the generation of silicon powder due to long-time heating of silane, improves the conversion rate of silane, and designs the rotary flow gas distributor as a spiral pipe, so that the mixed gas can be more uniformly distributed in the reactor, the heating is uniform, the temperature rising speed is fast, the temperature rising time is further saved, and the yield of ethylsilane is improved.