158results about "Metal silicides" patented technology

A Si alloy powder for a negative electrode, the Si alloy powder including: a Si phase; a SiX compound phase; and at least one selected from the group consisting of a SnY compound phase and a AlY compound phase, in which the element Y in the SnY compound phase and the AlY compound phase includes at least one element selected from the group consisting of Cu, Fe, Ni, Cr, Co, Mn, Zr, and Ti, the Si alloy powder has an average particle diameter of 30 μm or less, and an amount of the Si phase in an entire Si alloy is 30 mass % to 95 mass %.

The invention belongs to the technical field of lithium ion battery materials, and relates to a preparation method and application of an yttrium-doped porous silicon material, and the preparation method comprises the following steps: S1, preparing a silicon-yttrium alloy precursor; s2, mixing the silicon-yttrium alloy precursor with magnesium powder, and performing heat treatment; s3, nitridation reaction; and S4, carrying out acid etching. According to the YSi2 fine grain reinforced porous silicon-based material provided by the invention, a fine grain strengthening mechanism caused by grain boundary segregation in a structural material is introduced into a silicon negative electrode material, so that the intrinsic strength of the silicon material is improved, pulverization and crack propagation of the material are inhibited, and excellent cycle performance and outstanding rate capability are obtained; the invention provides a novel fine grain reinforced silicon negative electrode model, provides theoretical and experimental guidance for research and development of high-strength and high-specific-energy battery materials, solves the problems of low intrinsic strength, large volume expansion and poor conductivity of the silicon negative electrode material, and has the advantages of simple preparation process, short period, low energy consumption and no carbon, and can be produced on a large scale.

The invention discloses a topology enhanced three-dimensional porous framework lithium-based metal negative electrode material as well as a preparation method and application thereof, and belongs to the technical field of solid-state lithium batteries. The material comprises a three-dimensional porous conductive skeleton and an electrochemical active lithium-based phase, pores of the three-dimensional porous conductive skeleton are filled with the electrochemical active lithium-based phase, and tight physical and electrochemical contact is formed; the three-dimensional porous conductive framework is provided with a lithium-loving surface; the three-dimensional porous conductive skeleton has a Young modulus greater than 10 GPa; and the electrochemical active lithium-based phase is pure lithium metal or lithium alloy. The three-dimensional skeleton can effectively buffer the volume change of active lithium in the charging and discharging process, inhibit the growth of lithium dendrites, provide rapid lithium ion and electron transmission channels and bear external pressure. The all-solid-state lithium battery adopting the negative electrode material shows excellent cycling stability, high critical current density, high rate performance and nearly zero macroscopic volume change, and the comprehensive electrochemical performance and safety of the all-solid-state lithium battery are remarkably improved.

To enhance charge and discharge properties of a porous silicon material.SOLUTION: A porous silicon material disclosed herein comprises Si, Al, and a transition metal element M, has a specific surface area of 30 cm2 / g or less according to nitrogen adsorption, is in particulate form, and has a carbon coating layer on the surface.SELECTED DRAWING: Figure 1

The invention discloses a Joule thermal preparation method of a silicon-based composite material compounded by a silicon-based phase and a metal phase and application of the Joule thermal preparation method in a lithium ion battery, and relates to the technical field of lithium ion battery negative electrode materials, and the Joule thermal preparation method specifically comprises the following steps: S1, obtaining a silicon-based original material compounded by the silicon-based phase and the metal phase by adopting a suspension smelting and rapid quenching technology; s2, mixing the silicon-based original material with a conductive agent, and obtaining a silicon-based original material-conductive agent powder material through a sanding technology; and S3, placing the silicon-based original material-conductive agent powder material in rolled carbon paper, clamping the carbon paper at two ends of an electrode, introducing current, raising the temperature of the carbon paper to the highest temperature within a certain time through Joule heat generated by pulse discharge, and preparing the silicon-based composite particles on the carbon paper by using the Joule heat, the silicon-based composite material is obtained. The method disclosed by the invention is simple to operate, good in process controllability, high in yield and low in cost, and shows excellent comprehensive performance in the lithium ion battery.

The invention discloses an ytterbium-silicon alloy and a preparation method and application thereof, and relates to the technical field of alloys. According to the preparation method of the ytterbium-silicon alloy, the ytterbium-silicon alloy with the system composition basically consistent with the eutectic point is successfully prepared by controlling parameters such as the heating rate and the temperature in the eutectic melting process of ytterbium and silicon, the melting point of silicon can be reduced to 1253 DEG C or below, and follow-up machining and using of the ytterbium-silicon alloy are greatly facilitated. When the ytterbium-silicon alloy prepared by the method is used as a raw material for introducing silicon to prepare a carbon fiber reinforced silicon carbide composite material, the composite material with the bending strength reaching up to 249.85 MPa or above can be obtained, and the ytterbium-silicon alloy has a wide application prospect in the fields of aviation and the like.

The present invention aims to provide an electromagnetic wave-absorbing composition comprising a thermoplastic resin or a thermoplastic elastomer, exhibiting electromagnetic wave absorption performance, and suppressing an increase in fluidity when heated. The composition of the present invention comprises a component (A) that is at least one selected from a thermoplastic resin and a thermoplastic elastomer and a component (B) that is a Fe-Cr-Si-based soft-magnetic metal powder at a mass ratio (component (A) / component (B)) in a range of 5 / 95 to 80 / 20, further comprises a component (C) that is at least one selected from a phosphite-based compound and a phosphate-based compound in an amount of 0.02 to 1.4 parts by mass relative to 100 parts by mass in total of the component (A) and the component (B), and has an electromagnetic wave absorption energy P at 79 GHz of 5 kW / m3 or more.

The invention concerns the field of noble metal processing and relates to a platinoid-silicide- and silicon-carbide-containing mixture, which is recycled from platinoide- and SiC-containing materials, enriched, concentrated and / or cleaned, and to a method for producing same. The problem addressed by the present invention consists in specifying a platinoid-silicide- and silicon-carbide-containing mixture in which the platinoid-silicides are present at high yield and / or high purity and which is produced from platinoid- and SiC-containing materials by way of a simple and cost-effective method. The problem is solved by a platinoid-silicide- and silicon-carbide-containing mixture in which platinoids are present at a concentration of at least 1 mass % and in which, in addition to silicon carbide particles and silicon carbide particle agglomorates, the platinoids are present as platinoid silicide particles and / or as agglomerates of platinoid silicide particles, and or platinoid silicide particles bond the silicon carbide particles into an agglomerate and / or are arranged on the surface of the silicon carbide particles, wherein the silicon carbide of the silicon carbide particles is present as technically pure silicon carbide.

The present invention relates to a negative electrode active material comprising metal particles that include a core and a shell surrounding the core and whose surfaces are entirely or partially coated with an alkali metal-containing substance, a method for producing the same, and a lithium secondary battery including the same.

According to an embodiment, there is provided a regenerator material including an intermetallic compound represented by a compositional formula EraFebSi100-a-b (where 15≤a≤25, and 35≤b≤45), the intermetallic compound including a crystalline phase with a ThCr2Si2-type crystal structure as a main phase, and the crystal grain size of the main phase being 0.001 mm or more and 1 mm or less.

The invention relates to an electrode active material, an electrode mixture, an electrode layer, a battery, and methods for manufacturing the same. The main purpose of the present invention is to provide an electrode active material having little change in volume due to charge and discharge. The present disclosure solves the above-mentioned problem by providing an electrode active material having a silicon inclusion compound type II crystal phase, the electrode active material having voids inside primary particles, and the void amount P1 of voids having a pore diameter of 5 nm or less being 0.015 cc / g to 0.05 cc / g (inclusive).

The invention provides a manufacturing method of a negative electrode material, the negative electrode material, a negative electrode and a lithium ion battery, and the method comprises the following steps: adding a metal salt compound into a first solvent to form a first mixture; adding a silicon-based material into the first mixture to form a second mixture; performing first heat treatment on the second mixture to obtain an intermediate product; adding a carbon-based material and the intermediate product into a second solvent to form a third mixture; and performing a second heat treatment on the third mixture to obtain the negative electrode material, in which the negative electrode material comprises a metal silicide and a carbon coating layer coating the metal silicide, and both the metal silicide and the carbon coating layer are formed during the second heat treatment.

To further prevent deterioration of charge-discharge characteristics of a Si-containing material.SOLUTION: The method of producing a porous silicon material according to the present invention, comprises a precursor production step of melting, rapidly cooling and coagulating a raw material including Al, Si and V to obtain a precursor of a silicon alloy, and a step of making the alloy porous by removing an Al component included in the silicon alloy, to obtain a porous silicon material.SELECTED DRAWING: None

The invention relates to a preparation method of a polyacid modified CuMoSelectrode material, and belongs to the technical field of new energy materials and photoelectric conversion. According to the preparation method, an in-situ synthesis method is adopted, and SiW11Co is doped in a CuMoS material through a one-step solvothermal preparation technology; comprising the following steps: S1, dissolving sodium molybdate and thioacetamide in ethylene glycol, then adding SiW11Co into the solution for dissolving, finally adding Cu2O, and carrying out ultrasonic treatment on the mixed solution at room temperature for 10-15 minutes to obtain a uniform dark brown suspension; s2, continuously stirring for 5 minutes, transferring the precursor suspension into a high-pressure reaction kettle, and carrying out a solvothermal process for 22-24 hours; s3, the reaction kettle is cooled to the room temperature, a final product is centrifugally washed three times with deionized water and absolute ethyl alcohol respectively, then vacuum drying is conducted, and the SiW11Co / Cu2MoS4 composite material is obtained. By introducing a proper amount of SiW11Co, a rough structure is formed on the surface of CuMoS, the number of active sites is increased, the specific surface area is increased, and the catalytic performance and the stability are far better than those of a traditional CuS counter electrode and an unmodified CuMoS counter electrode.

A nitride semiconductor material having low lattice thermal conductivity and a heat flow switching element including the same are provided. The nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (where M represents at least one kind of transition metal element, and Te represents an arbitrary element), and has a thermal effusivity of less than 2000 Ws0.5 / m2K. In particular, the M is at least one of Cr, Mn, Ni, Mo, and W. In addition, a heat flow switching element according to the present invention includes an N-type semiconductor layer 3, an insulator layer 4 formed on the N-type semiconductor layer, and a P-type semiconductor layer 5 formed on the insulator layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material described above.

The present invention improves ion conductivity while improving water resistance. Provided is a solid electrolyte having a composition formula represented by LixMXy, wherein M is one or more elements selected from group 14 elements, X includes S, and the compositional ratio of Li, M, and X is x:1:y. The crystal structure of the solid electrolyte is hexagonal, and the volume of a hexagonal unit cell is greater than 0.0870 nm3 but less than 0.0880 nm3.

The invention relates to the technical field of impurity removal and recycling of silicon-containing waste residues, and discloses an impurity removal and utilization method of silicon-containing waste residues in a polycrystalline silicon production process, which comprises the following steps: immersing the silicon-containing waste residues in the polycrystalline silicon production process into a leaching solution containing hydrofluoric acid and copper nitrate, adding hydrogen peroxide, and carrying out a metal-assisted chemical etching reaction, obtaining silicon powder attached with copper; and the silicon powder attached with copper is annealed and then put into a cold hydrogenation reaction. According to the method, the purification of the silicon-containing waste residues and the loading of copper can be realized in one step by utilizing a metal-assisted chemical etching method, and a cuprous chloride catalyst does not need to be additionally added in a subsequent cold hydrogenation process. The silicon powder in the silicon-containing waste residue is recycled, the production cost is reduced, the waste of resources is avoided, and the method conforms to the criterion of harmless treatment.

The invention provides a preparation method of a silicon-copper composite catalyst, which comprises the following steps: pretreatment: uniformly mixing a copper-containing raw material and excessive silicon powder, putting the mixture into a reaction container, and feeding the reaction container into a heating furnace; the heating furnace is controlled to be heated to 1400-1500 DEG C, the silicon powder and the copper-containing raw materials are melted and react, and a mixture of Cu3Si and the remaining silicon powder is obtained; after the reaction step is completed, a mixture of Cu3Si and silicon powder is taken out of the heating furnace, naturally cooled to the room temperature and solidified into a blocky structure, and the blocky structure is crushed into powder; wherein the copper-containing raw material is elemental copper, copper-containing metal salt or copper oxide. According to the preparation method of the silicon-copper composite catalyst provided by the invention, the silicon powder and the copper-containing raw material are subjected to direct melting reaction, and the preparation is simple. And the silicon powder is controlled to be excessive based on cost consideration, so that the raw material silicon powder for producing the catalyst can also be used as a raw material in a cold hydrogenation process, and the excessive raw material silicon powder and the product Cu3Si do not need to be separated.

To prevent Mg2Si and SiO2 from being present in a produced porous silicon.SOLUTION: A method for producing porous silicon includes: a reduction step of obtaining an intermediate product containing Si and MgO by bringing Mg vapor into contact with a raw material containing SiO2 under reduced pressure and under conditions of Mg vapor pressure lower than the equilibrium pressure in the following reaction formula (1); and a cleaning step of removing MgO from the intermediate product.SELECTED DRAWING: Figure 2

The method comprises the steps that a raw material 1 and a raw material 2 are simultaneously conveyed to a reaction kettle through two charging machines and pipelines of the two charging machines and inert gas, the raw material 1 is pure silicon powder, the raw material 2 is pure silicon powder and pure nickel powder which account for half of the raw material 1 and are evenly mixed, the feeding speed of the raw material 1 is 1-3 Kg / h, the feeding speed of the raw material 2 is 1-3 Kg / h, and the feeding speed of the raw material 2 is 1-3 Kg / h; the feeding speed of the raw material 2 is 0.2-1Kg / h, and the feeding speed of the raw material 1 is 3-10 times of the feeding speed of the raw material 2 all the time; the raw material 1 enters a plasma arc core area under the conveying of inert gas, the raw material 1 is evaporated to form silicon steam, and the inert gas forms high-temperature carrier gas; conveying the raw material 2 into a tail area outside the plasma arc core area under the conveying of inert gas, and heating and melting to form silicon-nickel alloy liquid drops; and forming a silicon nanowire containing a silicon-nickel alloy in the silicon nanowire forming region. The method is simple in preparation process, safe, environmentally friendly, relatively low in equipment cost, high in controllability of technological parameters and capable of achieving large-scale production.

To further improve the charge and discharge characteristics of a porous silicon material.SOLUTION: The porous silicon material of the present disclosure contains a Si phase and a conductive phase containing 15 mass% or less of a Si-V compound, in which SiO2 is 20 mass% or less, a mass ratio So / Vs of SiO2 to the conductive phase is 1.5 or less, and a porosity determined by a mercury injection method is 80 vol.% or less.SELECTED DRAWING: Figure 4

The application belongs to the technical field of lithium ion battery negative electrode materials, and relates to a precipitation strengthened micron silicon negative electrode material and a preparation method and application thereof, the preparation method comprising the following steps: S1: silicon particles and scandium particles are in-situ doped through smelting to obtain a silicon-scandium alloy ingot; S2: after the silicon-scandium alloy ingot is subjected to solid solution treatment, the silicon-scandium alloy ingot is immersed in a cooling liquid at high temperature to obtain a supersaturated solid solution; S3: the supersaturated solid solution is subjected to aging treatment to obtain a desolvated silicon-scandium alloy ingot; and S4: the desolvated silicon-scandium alloy ingot is ground in a sand mill, and after centrifugation, a micron silicon-scandium negative electrode material is obtained. The application effectively solves the problem of insufficient silicon body phase conductivity, and at the same time, fine scandium silicide precipitation phases are pinned in the micron silicon matrix, the mechanical properties of the material are improved, the damage of a huge lithiation stress to the silicon material is effectively resisted, and good fast charging performance is provided under the premise of ensuring structural stability.

A complex multi-component alloy of iron, silicon and chromium comprising, as a weight percentage of the total weight of the alloy: not less than 21.0 chromium, not less than 61.0 silicon, 0.5 to 4.0 aluminium, 0.31 to 2.0 calcium, not more than 0.02 carbon, the rest being iron and traces of impurities, with a chromium-iron ratio of not less than 2.0. This type of alloy is used in ferroalloy metallurgy, especially as a reductant of Cr2O3 comprised in chromium ore in the production of low-carbon ferrochrome. The alloy according to the invention allows increasing the chromium yield from chromium ore to low carbon ferrochrome, reducing the mass content of Cr2O3 in the waste slag by increasing the reduction potential with respect to Cr2O3 in chromium ore.

This application relates to the field of data storage technologies, and specifically, to a phase-change memory material, a preparation method thereof, a phase-change memory chip, and a device. The phase-change memory material includes a material shown by TiaSbbTecDd, where a represents an atom percent of Ti, b represents an atom percent of Sb, c represents an atom percent of Te, d represents an atom percent of an element D, and a+b+c+d=1; 3%≤a≤45%, and 0.5≤(b:c)≤3; and D is a doping element, and 0≤d≤15%.The phase-change memory material has low operation power consumption and a low operation delay.

The invention relates to the technical field of wave-absorbing materials, in particular to a SiBCN-Fe ceramic corrosion-resistant wave-absorbing material and a preparation method and application thereof. The preparation method comprises the following steps: preparing a hyperbranched PBSZ-SiH polymer in an argon atmosphere; under the protection of argon, ferric acetylacetonate is dissolved in anhydrous xylene, and then the hyperbranched PBSZ-SiH polymer is added for a reaction; collecting a solid phase to obtain a PBSZ-Fe ceramic precursor; heating the PBSZ-Fe ceramic precursor, and carrying out a cross-linking reaction; and grinding a product obtained after the cross-linking reaction into powder, and then performing high-temperature pyrolysis in an argon atmosphere to obtain the SiBCN-Fe ceramic. According to the SiBCN-Fe ceramic corrosion-resistant wave-absorbing material, in a 3.5 wt% NaCl / H2O solution, the corrosion potential (Ev) is 0.035 V, the corrosion current density (Icorr) is 6.295 * 10 <-7 > Acm <-2 >, and the SiBCN-Fe ceramic corrosion-resistant wave-absorbing material is superior to most corrosion-resistant wave-absorbing materials; the effective absorption bandwidth (EAB) of 8.16 GHz under 2.7 mm and the minimum reflection loss of-32.2 dB under 2 mm are achieved, and excellent corrosion resistance and excellent wave absorbing performance are achieved.

The application belongs to the technical field of wave-absorbing materials, and particularly relates to a simple method for in-situ synthesis of FeSi@SiC high-temperature-resistant wave-absorbing material. The method comprises the following steps: dissolving Fe(NO3)3.9H2O in anhydrous ethanol, adding SiC powder, stirring, evaporating anhydrous ethanol in the solution, and heating to remove the combined water in the solid; grinding the solid after the combined water is removed into a powder sample, adding Fe powder and KCl, mixing uniformly, and performing reduction treatment; grinding the reduced solid powder thoroughly, adding hydrochloric acid solution, filtering, washing, and drying to obtain FeSi@SiC. The FeSi@SiC material is in-situ synthesized by the impregnation reduction method in one step, the preparation method is simple, the obtained FeSi@SiC material has high-temperature resistance and wave-absorbing performance, the physical properties do not change under the condition of 1300 DEG C, the material still has magnetism at 673K and excellent wave-absorbing performance, and has considerable industrial application value.

The present invention relates to a method for stabilizing copper-rich silicide phases, in which a silicon layer structure is applied to a carrier substrate. In particular, the problem addressed by the present invention, which is to identify a method by which the characteristics of phase separation and microstructure formation can be varied in a controlled manner while making the process as simple, fast and efficient as possible, is a method for stabilizing copper-rich silicide phases, in which a silicon layer structure is applied to a carrier substrate, a layer of the silicon layer structure is applied from a mixture of at least one metal and silicon, this mixture is subsequently subjected to a short tempering, the short tempering having a pulse duration in the range of 0.01-100 ms and / or a pulse width of 0.1-100 J / cm2. 2 The solution is achieved by a method in which the phase separation of the applied layers is controlled by setting process parameters such as the amount of pulse energy in the range of 0.5 to 100 °C, pre-heating or cooling of the carrier substrate to a range of 4 °C to 200 °C, as well as by material selection of the applied mixture of layers of the silicon layer structure.

The invention relates to a method for manufacturing a layer of cobalt silicide CoSi2 comprising the steps of: Providing a substrate comprising a layer of silicon; Depositing, on the substrate, a layer of cobalt Co; Annealing the stack by a nanosecond laser comprising at least one laser pulse of duration between 50 nanoseconds and 20 microseconds and an energy density chosen so as to form the layer of cobalt silicide CoSi2 in the solid state. Figure to be published with the abstract: None

To provide a nitride semiconductor material with low lattice thermal conductivity and a heat flow switching device comprising the same.SOLUTION: A nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (provided that M represents at least one transition metal element and Te is an optional element) and has a thermal effusivity of less than 2,000 Ws0.5 / m2K. Particularly, M is at least one element from Cr, Mn, Ni, Mo and W. A heat flow switching element according to the present invention comprises an N-type semiconductor layer 3, an insulating layer 4 stacked on the N-type semiconductor layer, and a P-type semiconductor layer 5 stacked on the insulating layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material.SELECTED DRAWING: Figure 1

The invention discloses an Mg2Si-based hydrogen storage material and a preparation method thereof.The preparation method comprises the following steps that a mixture of Mg2Si powder / Ti powder and ball-milling beads are placed in a ball-milling tank, and hydrogen is inflated; a ball milling program is set as follows: the rotating speed of the ball mill is 150-400 rpm; and after the ball milling procedure is completed, the Mg2Si-based hydrogen storage material is obtained. Through Ti induction and a hydrogen-assisted high-energy ball milling technology, Mg2Si is successfully subjected to high-temperature ball milling under a mild condition; the method has the advantages that the high-efficiency hydrogenation is realized under the conditions that the pressure is 1.5 MPa H2 and an external heat source is not needed for heating, the conversion rate is as high as 76%, and the technical bottleneck that the traditional Mg2Si hydrogenation is difficult is solved; meanwhile, excellent hydrogen absorption and desorption kinetics and low-temperature hydrolysis hydrogen production performance are achieved.