61results about "Metal silicides" patented technology

The invention discloses a topology enhanced three-dimensional porous framework lithium-based metal negative electrode material as well as a preparation method and application thereof, and belongs to the technical field of solid-state lithium batteries. The material comprises a three-dimensional porous conductive skeleton and an electrochemical active lithium-based phase, pores of the three-dimensional porous conductive skeleton are filled with the electrochemical active lithium-based phase, and tight physical and electrochemical contact is formed; the three-dimensional porous conductive framework is provided with a lithium-loving surface; the three-dimensional porous conductive skeleton has a Young modulus greater than 10 GPa; and the electrochemical active lithium-based phase is pure lithium metal or lithium alloy. The three-dimensional skeleton can effectively buffer the volume change of active lithium in the charging and discharging process, inhibit the growth of lithium dendrites, provide rapid lithium ion and electron transmission channels and bear external pressure. The all-solid-state lithium battery adopting the negative electrode material shows excellent cycling stability, high critical current density, high rate performance and nearly zero macroscopic volume change, and the comprehensive electrochemical performance and safety of the all-solid-state lithium battery are remarkably improved.

The invention discloses an ytterbium-silicon alloy and a preparation method and application thereof, and relates to the technical field of alloys. According to the preparation method of the ytterbium-silicon alloy, the ytterbium-silicon alloy with the system composition basically consistent with the eutectic point is successfully prepared by controlling parameters such as the heating rate and the temperature in the eutectic melting process of ytterbium and silicon, the melting point of silicon can be reduced to 1253 DEG C or below, and follow-up machining and using of the ytterbium-silicon alloy are greatly facilitated. When the ytterbium-silicon alloy prepared by the method is used as a raw material for introducing silicon to prepare a carbon fiber reinforced silicon carbide composite material, the composite material with the bending strength reaching up to 249.85 MPa or above can be obtained, and the ytterbium-silicon alloy has a wide application prospect in the fields of aviation and the like.

The invention concerns the field of noble metal processing and relates to a platinoid-silicide- and silicon-carbide-containing mixture, which is recycled from platinoide- and SiC-containing materials, enriched, concentrated and / or cleaned, and to a method for producing same. The problem addressed by the present invention consists in specifying a platinoid-silicide- and silicon-carbide-containing mixture in which the platinoid-silicides are present at high yield and / or high purity and which is produced from platinoid- and SiC-containing materials by way of a simple and cost-effective method. The problem is solved by a platinoid-silicide- and silicon-carbide-containing mixture in which platinoids are present at a concentration of at least 1 mass % and in which, in addition to silicon carbide particles and silicon carbide particle agglomorates, the platinoids are present as platinoid silicide particles and / or as agglomerates of platinoid silicide particles, and or platinoid silicide particles bond the silicon carbide particles into an agglomerate and / or are arranged on the surface of the silicon carbide particles, wherein the silicon carbide of the silicon carbide particles is present as technically pure silicon carbide.

According to an embodiment, there is provided a regenerator material including an intermetallic compound represented by a compositional formula EraFebSi100-a-b (where 15≤a≤25, and 35≤b≤45), the intermetallic compound including a crystalline phase with a ThCr2Si2-type crystal structure as a main phase, and the crystal grain size of the main phase being 0.001 mm or more and 1 mm or less.

The invention provides a manufacturing method of a negative electrode material, the negative electrode material, a negative electrode and a lithium ion battery, and the method comprises the following steps: adding a metal salt compound into a first solvent to form a first mixture; adding a silicon-based material into the first mixture to form a second mixture; performing first heat treatment on the second mixture to obtain an intermediate product; adding a carbon-based material and the intermediate product into a second solvent to form a third mixture; and performing a second heat treatment on the third mixture to obtain the negative electrode material, in which the negative electrode material comprises a metal silicide and a carbon coating layer coating the metal silicide, and both the metal silicide and the carbon coating layer are formed during the second heat treatment.

To further prevent deterioration of charge-discharge characteristics of a Si-containing material.SOLUTION: The method of producing a porous silicon material according to the present invention, comprises a precursor production step of melting, rapidly cooling and coagulating a raw material including Al, Si and V to obtain a precursor of a silicon alloy, and a step of making the alloy porous by removing an Al component included in the silicon alloy, to obtain a porous silicon material.SELECTED DRAWING: None

The invention relates to a preparation method of a polyacid modified CuMoSelectrode material, and belongs to the technical field of new energy materials and photoelectric conversion. According to the preparation method, an in-situ synthesis method is adopted, and SiW11Co is doped in a CuMoS material through a one-step solvothermal preparation technology; comprising the following steps: S1, dissolving sodium molybdate and thioacetamide in ethylene glycol, then adding SiW11Co into the solution for dissolving, finally adding Cu2O, and carrying out ultrasonic treatment on the mixed solution at room temperature for 10-15 minutes to obtain a uniform dark brown suspension; s2, continuously stirring for 5 minutes, transferring the precursor suspension into a high-pressure reaction kettle, and carrying out a solvothermal process for 22-24 hours; s3, the reaction kettle is cooled to the room temperature, a final product is centrifugally washed three times with deionized water and absolute ethyl alcohol respectively, then vacuum drying is conducted, and the SiW11Co / Cu2MoS4 composite material is obtained. By introducing a proper amount of SiW11Co, a rough structure is formed on the surface of CuMoS, the number of active sites is increased, the specific surface area is increased, and the catalytic performance and the stability are far better than those of a traditional CuS counter electrode and an unmodified CuMoS counter electrode.

A nitride semiconductor material having low lattice thermal conductivity and a heat flow switching element including the same are provided. The nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (where M represents at least one kind of transition metal element, and Te represents an arbitrary element), and has a thermal effusivity of less than 2000 Ws0.5 / m2K. In particular, the M is at least one of Cr, Mn, Ni, Mo, and W. In addition, a heat flow switching element according to the present invention includes an N-type semiconductor layer 3, an insulator layer 4 formed on the N-type semiconductor layer, and a P-type semiconductor layer 5 formed on the insulator layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material described above.

The invention provides a preparation method of a silicon-copper composite catalyst, which comprises the following steps: pretreatment: uniformly mixing a copper-containing raw material and excessive silicon powder, putting the mixture into a reaction container, and feeding the reaction container into a heating furnace; the heating furnace is controlled to be heated to 1400-1500 DEG C, the silicon powder and the copper-containing raw materials are melted and react, and a mixture of Cu3Si and the remaining silicon powder is obtained; after the reaction step is completed, a mixture of Cu3Si and silicon powder is taken out of the heating furnace, naturally cooled to the room temperature and solidified into a blocky structure, and the blocky structure is crushed into powder; wherein the copper-containing raw material is elemental copper, copper-containing metal salt or copper oxide. According to the preparation method of the silicon-copper composite catalyst provided by the invention, the silicon powder and the copper-containing raw material are subjected to direct melting reaction, and the preparation is simple. And the silicon powder is controlled to be excessive based on cost consideration, so that the raw material silicon powder for producing the catalyst can also be used as a raw material in a cold hydrogenation process, and the excessive raw material silicon powder and the product Cu3Si do not need to be separated.

The method comprises the steps that a raw material 1 and a raw material 2 are simultaneously conveyed to a reaction kettle through two charging machines and pipelines of the two charging machines and inert gas, the raw material 1 is pure silicon powder, the raw material 2 is pure silicon powder and pure nickel powder which account for half of the raw material 1 and are evenly mixed, the feeding speed of the raw material 1 is 1-3 Kg / h, the feeding speed of the raw material 2 is 1-3 Kg / h, and the feeding speed of the raw material 2 is 1-3 Kg / h; the feeding speed of the raw material 2 is 0.2-1Kg / h, and the feeding speed of the raw material 1 is 3-10 times of the feeding speed of the raw material 2 all the time; the raw material 1 enters a plasma arc core area under the conveying of inert gas, the raw material 1 is evaporated to form silicon steam, and the inert gas forms high-temperature carrier gas; conveying the raw material 2 into a tail area outside the plasma arc core area under the conveying of inert gas, and heating and melting to form silicon-nickel alloy liquid drops; and forming a silicon nanowire containing a silicon-nickel alloy in the silicon nanowire forming region. The method is simple in preparation process, safe, environmentally friendly, relatively low in equipment cost, high in controllability of technological parameters and capable of achieving large-scale production.

The application belongs to the technical field of lithium ion battery negative electrode materials, and relates to a precipitation strengthened micron silicon negative electrode material and a preparation method and application thereof, the preparation method comprising the following steps: S1: silicon particles and scandium particles are in-situ doped through smelting to obtain a silicon-scandium alloy ingot; S2: after the silicon-scandium alloy ingot is subjected to solid solution treatment, the silicon-scandium alloy ingot is immersed in a cooling liquid at high temperature to obtain a supersaturated solid solution; S3: the supersaturated solid solution is subjected to aging treatment to obtain a desolvated silicon-scandium alloy ingot; and S4: the desolvated silicon-scandium alloy ingot is ground in a sand mill, and after centrifugation, a micron silicon-scandium negative electrode material is obtained. The application effectively solves the problem of insufficient silicon body phase conductivity, and at the same time, fine scandium silicide precipitation phases are pinned in the micron silicon matrix, the mechanical properties of the material are improved, the damage of a huge lithiation stress to the silicon material is effectively resisted, and good fast charging performance is provided under the premise of ensuring structural stability.

A complex multi-component alloy of iron, silicon and chromium comprising, as a weight percentage of the total weight of the alloy: not less than 21.0 chromium, not less than 61.0 silicon, 0.5 to 4.0 aluminium, 0.31 to 2.0 calcium, not more than 0.02 carbon, the rest being iron and traces of impurities, with a chromium-iron ratio of not less than 2.0. This type of alloy is used in ferroalloy metallurgy, especially as a reductant of Cr2O3 comprised in chromium ore in the production of low-carbon ferrochrome. The alloy according to the invention allows increasing the chromium yield from chromium ore to low carbon ferrochrome, reducing the mass content of Cr2O3 in the waste slag by increasing the reduction potential with respect to Cr2O3 in chromium ore.

The invention relates to the technical field of wave-absorbing materials, in particular to a SiBCN-Fe ceramic corrosion-resistant wave-absorbing material and a preparation method and application thereof. The preparation method comprises the following steps: preparing a hyperbranched PBSZ-SiH polymer in an argon atmosphere; under the protection of argon, ferric acetylacetonate is dissolved in anhydrous xylene, and then the hyperbranched PBSZ-SiH polymer is added for a reaction; collecting a solid phase to obtain a PBSZ-Fe ceramic precursor; heating the PBSZ-Fe ceramic precursor, and carrying out a cross-linking reaction; and grinding a product obtained after the cross-linking reaction into powder, and then performing high-temperature pyrolysis in an argon atmosphere to obtain the SiBCN-Fe ceramic. According to the SiBCN-Fe ceramic corrosion-resistant wave-absorbing material, in a 3.5 wt% NaCl / H2O solution, the corrosion potential (Ev) is 0.035 V, the corrosion current density (Icorr) is 6.295 * 10 <-7 > Acm <-2 >, and the SiBCN-Fe ceramic corrosion-resistant wave-absorbing material is superior to most corrosion-resistant wave-absorbing materials; the effective absorption bandwidth (EAB) of 8.16 GHz under 2.7 mm and the minimum reflection loss of-32.2 dB under 2 mm are achieved, and excellent corrosion resistance and excellent wave absorbing performance are achieved.

The application belongs to the technical field of wave-absorbing materials, and particularly relates to a simple method for in-situ synthesis of FeSi@SiC high-temperature-resistant wave-absorbing material. The method comprises the following steps: dissolving Fe(NO3)3.9H2O in anhydrous ethanol, adding SiC powder, stirring, evaporating anhydrous ethanol in the solution, and heating to remove the combined water in the solid; grinding the solid after the combined water is removed into a powder sample, adding Fe powder and KCl, mixing uniformly, and performing reduction treatment; grinding the reduced solid powder thoroughly, adding hydrochloric acid solution, filtering, washing, and drying to obtain FeSi@SiC. The FeSi@SiC material is in-situ synthesized by the impregnation reduction method in one step, the preparation method is simple, the obtained FeSi@SiC material has high-temperature resistance and wave-absorbing performance, the physical properties do not change under the condition of 1300 DEG C, the material still has magnetism at 673K and excellent wave-absorbing performance, and has considerable industrial application value.

To provide a nitride semiconductor material with low lattice thermal conductivity and a heat flow switching device comprising the same.SOLUTION: A nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (provided that M represents at least one transition metal element and Te is an optional element) and has a thermal effusivity of less than 2,000 Ws0.5 / m2K. Particularly, M is at least one element from Cr, Mn, Ni, Mo and W. A heat flow switching element according to the present invention comprises an N-type semiconductor layer 3, an insulating layer 4 stacked on the N-type semiconductor layer, and a P-type semiconductor layer 5 stacked on the insulating layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material.SELECTED DRAWING: Figure 1

To provide a Cr-Si sintered body made from chromium silicide (CrSi2) and silicon (Si) to have high strength.SOLUTION: Provided is a Cr-Si sintered body including chromium (Cr) and silicon (Si), the Cr-Si sintered body being characterized in that the crystal structure assigned by x-ray diffraction is configured from chromium silicide (CrSi2) and silicon (Si), a CrSi2 phase is present at 60 wt.% or higher in bulk, the sintered body density is 95% or higher, and the average grain size of the CrSi2 phase is 60 μm or lower.SELECTED DRAWING: Figure 1

The invention discloses a bionic porous titanium-silicon material based on topological connectivity optimization and a preparation method thereof, and belongs to the technical field of new materials. The material is inspired by the Poincare conjecture topology principle, a three-dimensional bicontinuous porous network structure with the global single-connection and local bicontinuous characteristics is designed and constructed, and titanium-silicon intermetallic compounds (such as Ti5Si3 and TiSi2) are used as a framework. The preparation method combines an additive manufacturing template technology and a reaction synthesis technology, and is realized through the steps of three-dimensional template design, precursor slurry impregnation, programmed heat treatment and the like. The material disclosed by the invention has excellent connectivity, high specific surface area and good mechanical strength while keeping high porosity (50-98%), and has important application value in the fields of catalysis, energy storage, light structures and biomedicine.

The invention discloses a high-purity cerium-silicon alloy and a preparation method thereof, the high-purity cerium-silicon alloy comprises cerium and silicon, the content of cerium is 60-80 wt%, the content of silicon is 20-40 wt%, the purity of the cerium-silicon alloy is greater than or equal to 99.99%, the content of impurity Fe in the cerium-silicon alloy is less than or equal to 5 ppm, the content of impurity Ni is less than or equal to 3 ppm, the content of impurity Al is less than or equal to 5 ppm, the content of gas impurities is less than or equal to 100 ppm, and the balance impurities are less than or equal to 40 ppm. The cerium-silicon alloy provided by the invention has the advantages of specific phase composition, low defect rate and purity of more than or equal to 4N, and can meet the strict requirements on materials in the fields of semiconductors, high-end electronics and the like.

Provided is a process for preparing composite particles for use as an electroactive material for a metal-ion battery, the process comprising the steps of: (a) providing porous particle frameworks comprising micropores and / or mesopores and optionally a polyvalent metal; (b) optionally impregnating the porous particle frameworks with a polyvalent metal; (c) depositing elemental silicon and / or elemental germanium in the pores of the porous particle frameworks; wherein either the porous particle frameworks in step (a) comprise the polyvalent metal, step (b) is performed, or both; thereby providing impregnated porous particle frameworks comprising the polyvalent metal and the silicon and / or germanium; and (d) contacting the impregnated porous particle frameworks with a monovalent metal while applying an electric potential effective to cause the formation of an intermetallic phase which comprises the polyvalent metal, silicon and / or germanium, and the monovalent metal; thereby providing the composite particles.

Gallium arsenide single crystal with a carrier concentration of 1×10 18 ~4×10 18 / cm 3 , mobility is 1700~2600cm 2 / v·s, and the manufacturing method is as follows: before the growth of the gallium arsenide single crystal, Si x As y The compound is distributed in a gallium arsenide polycrystal, and the B atom density of the resulting gallium arsenide single crystal is at least 20% lower than the B atom density of a gallium arsenide single crystal produced with elemental Si as a dopant at the same Si carrier concentration, and the B content is ≦5×10 18 / cm 3 This manufacturing method can reduce the "B contamination" of the gallium arsenide single crystal and improve the performance of the gallium arsenide single crystal.

The present invention pertains to an electrode material for lithium-ion batteries, in which: graphite powder and an Si alloy composite powder are mixed; the Si alloy composite powder has an average particle diameter of 5 μm or less, and contains Si particles, Si-X compound particles (X=Fe, Ni, Cr, Co, Mn, Zr, Ti), and at least one of Sn-Y compound particles (Y=Cu, Fe, Ni, Cr, Co, Mn, Zr, Ti) and Al-Y compound particles; the proportion of the Si particles in the Si alloy composite powder is 30-95 mass%; and, the coverage of the surface of the graphite particles by the Si alloy composite powder is 5% or greater.

A complex multi-component alloy of iron, silicon and chromium includes, as a weight percentage of the total weight of the alloy: not less than 21.0 chromium, not less than 61.0 silicon, 0.5 to 4.0 aluminium, 0.31 to 2.0 calcium, not more than 0.02 carbon, the rest being iron and traces of impurities, with a chromium-iron ratio of not less than 2.0. This type of alloy is used in ferroalloy metallurgy, especially as a reductant of Cr2O3 included in chromium ore in the production of low-carbon ferrochrome. The alloy, according to at least one embodiment, allows increasing the chromium yield from chromium ore to low carbon ferrochrome, reducing the mass content of Cr2O3 in the waste slag by increasing the reduction potential with respect to Cr2O3 in chromium ore.

The present invention aims to provide a photosensitive composition that can form a film with good storage stability, heat shock resistance, and resolubility, and that is less prone to developing stains and has excellent solvent resistance after the low-temperature curing process. [Solution] A method for producing coated metal magnetic particles, comprising heating a mixture containing metal magnetic particles, a silane compound, a pyrolytic ammonium salt, and water, in the presence of ammonia produced by heating, in which case the silane compound reacts and coats the metal magnetic particles. The decomposition temperature of the pyrolytic ammonium salt is preferably 40 to 120°C.

This invention relates to a method for manufacturing predominantly amorphous silicon particles, the particles prepared therefrom, and a secondary electrochemical battery using these particles as the negative electrode active material of a secondary electrochemical battery, wherein the predominantly amorphous silicon particles comprise the formula: Si (1‑x) M x The compound wherein 0.005 ≤ x < 0.05 and M is at least one substituent element selected from C, N or mixtures thereof, and wherein the particle exhibits a peak at about 28° and a peak at about 52° when subjected to XRD analysis with non-monochromatic CuKα radiation, and wherein the two peaks have a full width at half maximum (FWHM) of at least 5° when fitted with Gaussian peaks.

A negative electrode active material for a secondary battery includes an intermetallic compound having a cage structure. The cage structure is constituted of at least one first atom located within a cage, and a plurality of second atoms arranged in a cage-like form so as to surround the first atom. The first atom is a cerium atom, and the plurality of the second atoms include 8 or more and 17 or less silicon atoms.

The present application relates to the field of data storage technology, in particular to a phase change memory material, its preparation method, phase change memory chip, and device. The phase change memory material is Ti a Sb b Te c D d where a represents the atomic percentage of Ti, b represents the atomic percentage of Sb, c represents the atomic percentage of Te, and d represents the atomic percentage of element D, where a+b+c+d=1, 3%≦a≦45%, and 0.5≦(b:c)≦3, and D is a doping element, where 0≦d≦15%. The phase change memory material has low operating power consumption and low operating delay.

The invention relates to a compound selenium-silicon-mercury-cesium and a selenium-silicon-mercury-cesium infrared nonlinear optical crystal as well as a preparation method and application thereof. The molecular formula of the compound is Cs2HgSi3Se8, the molecular weight is 1182.36, the molecular formula of the crystal is Cs2HgSi3Se8, the molecular weight is 1182.36, the crystal is crystallized in an orthorhombic crystal system, the space group is P212121, and the cell parameters are as follows: a = 7.6202 (10), b = 12.7926 (19), c = 17.517 (2), alpha = beta = gamma = 90 degrees, Z = 4 and the volume is 1707.6 (4) 3. The crystal is prepared by adopting a high-temperature melt method, a chemical vapor transport method or a Bridgman-Stockbarger method, is of a non-centrosymmetric structure, and has the advantages of maximum band gap, moderate non-linear optical effect, wide light-transmitting wave band, higher hardness, good mechanical property, difficulty in fragmentation and deliquescence and easiness in processing and storage in all Hg-based selenide reported at present; the method can be used for manufacturing infrared nonlinear optical devices. The method has important application in the fields of infrared photoelectric countermeasure, spectrum technology, laser communication, remote sensing distance measurement and the like.

To provide a thermal storage material, a refrigerator, and a superconducting coil assembly device that have high specific heat properties and mechanical strength in the cryogenic range. [Solution] According to the embodiment, the composition formula Er a Fe b Si 100-a-b A thermal storage material is provided which contains an intermetallic compound represented by (15≦a≦25, 35≦b≦45), wherein the intermetallic compound has a crystalline phase having a ThCr2Si2 type crystal structure as its main phase, and the grain size of the main phase is 0.001 mm or more and 1 mm or less.

The application discloses a preparation method of a novel dual-rare earth modified SiC electromagnetic wave absorbing material with a multi-frequency spectrum response and a product prepared by the method. A full-silicon molecular sieve MFI prepared by a hydrothermal reduction method is used as a precursor, high-activity Si / SiO2 powder is obtained through a magnesium hot reduction method, and then the high-activity Si / SiO2 powder is mixed with dual-rare earth elements at a proper ratio, and a composite material rich in SiC nanowires, SiC, Ce5Si4 and Pr5Si4 nanoparticles is successfully prepared through freeze drying and carbonization processes. Multiple heterojunction interfaces constructed in the material are efficiently excited under the action of an applied electromagnetic field, and the multiple heterojunction interfaces induce strong polarization relaxation in a low-frequency (2-6 GHz) wave band, a medium-frequency (6-12 GHz) wave band and a high-frequency (12-18 GHz) wave band, so that the polarization loss capacity of the material is significantly enhanced, and important technical ideas and approaches are provided for the design of the electromagnetic wave absorbing material with the multi-frequency spectrum response.

This negative electrode active material for secondary batteries contains an intermetallic compound that has a cage structure; the cage structure is composed of at least one first atom that is arranged within a cage, and a plurality of second atoms that are arranged in the form of a cage so as to surround the first atom; the first atom is a zirconium atom; and the plurality of second atoms include from 8 to 16 silicon atoms.