7150 results about "Photoelectric conversion" patented technology

The invention discloses a back contact battery, a manufacturing method thereof and a photovoltaic module. The back contact battery comprises a semiconductor substrate, a first semiconductor layer and a second semiconductor layer, the first surface of the semiconductor substrate is provided with a plurality of groove structures, and the groove bottoms of the groove structures are pyramid-shaped suede surfaces; and along the thickness direction of the semiconductor substrate, the distance between the surface, deviating from the semiconductor substrate, of the second semiconductor layer arranged at the pyramid tip of the groove bottom and the surface, deviating from the semiconductor substrate, of the first semiconductor layer is h0, and h0 is larger than or equal to 292 nm and smaller than or equal to 15288 nm. H0 is set in a reasonable range, the situation that teeth of the roller extend into the groove structure to scratch the second semiconductor layer located at the groove bottom is reduced, meanwhile, it is guaranteed that the light absorption rate of the second semiconductor layer in the groove structure and the photoelectric conversion rate of the back contact cell cannot be reduced, and it is further guaranteed that the cell piece has enough mechanical strength.

The invention relates to the technical field of optical lens defect detection, and particularly discloses an optical lens laser-induced damage on-line detection method and system, a linear polarizer and a narrow-band filter are connected in series in a detection laser light path, non-target polarized light is filtered through polarization direction matching, meanwhile, interference of the environment and scattered light is inhibited through the narrow-band filter, and the laser-induced damage on-line detection system is obtained. According to the method, external source noise such as ambient light and non-target polarized light is reduced through polarization matching and narrow-band filtering, randomness of speckle noise is offset through multi-angle collection and signal fusion in a visual detection mode, exposure is dynamically adjusted, an image is fused to improve the signal-to-noise ratio, noise and real signals are decoupled through self-supervised learning, and the real-time performance of the system is improved. Dust interference is removed in combination with morphological operation; a deep learning reasoning model enhances the damage identification capability in a noise environment, defocusing blur caused by mechanical vibration is eliminated through phase conjugate correction, and the influence of photoelectric conversion noise, dust interference and the like on the detection efficiency and accuracy is remarkably reduced through multi-link linkage.

Collapses of pillars are suppressed. An optical detecting device includes a pixel array section having multiple pixels that are arranged two-dimensionally therein. Further, each pixel of the multiple pixels includes a photoelectric converting section provided on a semiconductor layer and a metasurface structure that is arranged on a light incidence surface side of the semiconductor layer and that guides incident light to the photoelectric converting section. Moreover, the metasurface structure includes multiple pillars that are arranged at distances therebetween which are shorter than a wavelength of the incident light and a transparent support that connects and supports at least some of the multiple pillars.

The embodiment of the invention provides a detection device, electronic equipment and a control method thereof, relates to the technical field of data detection, and aims to solve the problem that equipment with a health sign detection function is large in size. The detection device comprises a first circuit board, a light-emitting device, a photoelectric converter, a metal cover plate and a light-transmitting structure. The photoelectric converter and the light-emitting device are arranged on the same side of the first circuit board and are electrically connected with the first circuit board. The metal cover plate covers the first circuit board and is electrically connected with the first circuit board. The metal cover plate is provided with a first light through hole for exposing the light-emitting device and a second light through hole for exposing the photoelectric converter. The light-transmitting structure is filled in the first light-transmitting hole, the second light-transmitting hole and the accommodating cavity, wraps the light-emitting device and the photoelectric converter, and is connected with the light-emitting device, the photoelectric converter, the first circuit board and the metal cover plate to form an integrated structural member, so that the size of the detection device is reduced.

An image sensing device includes a first photoelectric conversion element configured to overlap a left region of a first microlens, a second photoelectric conversion element configured to overlap a right region of the first microlens, a first floating diffusion region configured to accumulate photocharges received from at least one of the first photoelectric conversion element and the second photoelectric conversion element, a first transfer gate disposed at a top-left side of the first floating diffusion region and configured to transfer photocharges of the first photoelectric conversion element to the first floating diffusion region, and a second transfer gate disposed at a bottom-right side of the first floating diffusion region and configured to transfer photocharges of the second photoelectric conversion element to the first floating diffusion region.

An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Imaging with reduced noise is disclosed. In one example, an imaging element includes a pixel block including a first pixel and a second pixel that performs photoelectric conversion of incident light of a wavelength different from that of the first pixel. An electric charge holding unit holds electric charges of the first and second pixels, and a signal generation unit generates an image signal based on the held electric charges. A pixel block controller controls transfer of the electric charges of the first pixel to generate a first image signal and of the second pixel to generate an added image signal. A signal processing unit switches a first mode for outputting the first image signal and the added image signal and a second mode for outputting the first image signal and a second image signal obtained by subtracting the first image signal from the added image signal.

Luminance information and luminance change information are obtained at the same timing with high resolution. In one example, a solid-state imaging device includes pixels and a control circuit. Each of the pixels includes a photoelectric conversion element that generates an electrical signal based upon incident light, a first pixel circuit that converts the electrical signal into first information, and a second pixel circuit that converts the electrical signal into second information. The control circuit controls each of the pixels such that the photoelectric conversion element is connected to either the first pixel circuit or the second pixel circuit.

The invention provides a data processing method and device, a computer program product, equipment and a medium, and the method comprises the steps: obtaining to-be-processed data, and inputting the to-be-processed data into a data processing model, the data processing model comprises an interference gating module constructed based on an interferometer, an interference fine tuning module, and a plurality of diffraction expert modules constructed based on sub-wavelength units; determining one or more data flow direction objects matched with the to-be-processed data according to an interference gating module in the data processing model; according to a diffraction expert module matched with the data flow direction object in the data processing model, performing data processing on the to-be-processed data to generate a first processing result; and processing the first processing result according to an interference fine tuning module in the data processing model to output a target processing result. On the basis of an interference-diffraction model architecture, all data processing steps are completed on an optical calculation device, and performance loss caused by frequent photoelectric conversion / digital-to-analog conversion is avoided, so that the overall data processing speed is increased.

A light absorber 10 has a transmission spectrum satisfying the following requirements (I), (II), (III), (IV), and (V) at an incident angle of 0°. The light absorber 10 has a haze less than 0.20%. (I) An average transmittance TA0deg(460-600) is 75% or more. (II) A shorter cut-off wavelength λH0deg(s) is in a range of 390 nm to 450 nm. (III) A longer cut-off wavelength λH0deg(L) is in a range of 600 nm to 680 nm. (IV) An average TA0deg(300-380) is 1.2% or less. (V) An average TA0deg(750-1000) is 1.2% or less.

The invention relates to the field of gravity measurement, and aims to provide a small-size high-precision gravimeter based on an anti-magnetic suspension principle. The gravimeter comprises a low-frequency magnetic potential well unit, a suspension mechanical oscillator unit, a displacement detection unit and a cavity enclosing unit, and lens groups of the low-frequency magnetic potential well unit, the suspension mechanical oscillator unit and the displacement detection unit are all located in a cavity of a heat preservation shell on the innermost side. According to the invention, a measurement environment without external influence can be provided for the displacement detection of the suspension oscillator, the adjustment of the frequency in the vertical direction in a magnetic suspension potential well is resisted, the movement of an object to be measured is reflected by the voltage fluctuation brought by the laser intensity change measured by the photoelectric converter, and the high-precision gravity measurement is realized; the vibrator adopts a magnetic suspension mode and does not make mechanical contact with the environment, and long-term irreversible deformation can be avoided; and a temperature control and magnetic shielding device or other auxiliary equipment with a large volume is not needed, so that the gravimeter is small in overall size, convenient to move, low in cost and beneficial to popularization.

The invention relates to a partial discharge detection system based on Rydberg atoms in the field of partial discharge detection of electrical equipment, the system comprises an optical path frequency stabilization module, an atom probe, a photoelectric detection module, a controller module and a power frequency synchronous trigger signal circuit, the optical path frequency stabilization module locks 852.35 nm probe light and pump light frequency less than 509.53 nm through SAS and EIT technologies, and the atomic probe is used for detecting the frequency of the probe light. Inducing transition from a cesium atom ground state to a first excited state to a Rydberg state; under the effect of partial discharge pulse, the atomic probe outputs a modulated EIT transmission spectrum signal, after photoelectric conversion and filtering, the controller module analyzes the amplitude and phase information of the pulse in combination with a power frequency synchronizing signal, the upper computer generates a PRPD diagram to analyze the discharge correlation, the detection sensitivity of the system reaches-50dBm, the frequency band of 300MHz-2GHz is covered, the dynamic range is greater than or equal to 50dB, the equivalent height is greater than or equal to 20mm, and the discharge correlation is greater than or equal to 20mm. Broadband and high-resolution detection is achieved, the problem of phase synchronization is solved, and the device is suitable for high-voltage environment on-line monitoring.

The invention relates to the technical field of semiconductor devices, in particular to a multi-wavelength light emitting diode and a light emitting module. According to the multi-wavelength light-emitting diode, a multi-quantum well layer comprises n groups of quantum well light-emitting units with different forbidden bandwidths; the n group of quantum well light-emitting units and the (n-1) group of quantum well light-emitting units meet at least one of the following characteristics: (a) the concentration of In in at least one well layer of the n group of quantum well light-emitting units is greater than the concentration of In in at least one well layer of the (n-1) group of quantum well light-emitting units; and (b) the thickness of at least one well layer of the n group of quantum well light-emitting units is greater than that of at least one well layer of the (n-1) group of quantum well light-emitting units. Through the arrangement of the multiple groups of quantum well light-emitting units, under the condition that multiple wavelengths can be generated, stress is fully released, and the photoelectric conversion efficiency is improved.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The preparation method of the solar cell comprises the following steps: providing a silicon substrate; sequentially forming a first transparent conductive oxide layer, a first sacrificial layer and a first metal seed layer on the first surface of the silicon substrate; forming a patterned first mask layer on the first metal seed layer to expose the first metal seed layer in the first metal region; depositing a metal material on the first metal seed layer in the first metal region by adopting an electroplating process to form a first metal electrode; completely removing the first mask layer and the first metal seed layer in the first non-metal region; wherein the first transparent conductive oxide layer is an acid-resistant transparent conductive oxide layer; the first sacrificial layer is a non-acid-resistant transparent conductive oxide layer. The solar cell provided by the technical scheme of the invention has good electrical performance, stability and photoelectric conversion rate.

The invention discloses an intelligent silicon controlled rectifier voltage conversion circuit, which relates to the technical field of voltage conversion, and comprises a photovoltaic module, a micro-control module, a power regulation module, a first voltage threshold, a second voltage threshold, a second voltage threshold, a third voltage threshold, a fourth voltage threshold, a fifth voltage threshold and a sixth voltage threshold, when the converted electric energy is larger than a first voltage threshold value, the access control module transmits the electric energy output by power regulation, superposes the electric energy output by double-path electric energy coupling and stores the superposed electric energy by the energy storage module, and when the converted electric energy is smaller than the first voltage threshold value and larger than a second voltage threshold value, the access control module outputs the superposed electric energy. And when the voltage is smaller than a second voltage threshold value, electric energy coupling is stopped, the power regulation module is controlled to carry out power regulation on the electric energy released by the energy storage module, and power is supplied to the output module. According to the intelligent silicon controlled voltage conversion circuit, the utilization rate of photovoltaic electric energy can be improved, and the voltage gain and the power supply efficiency are improved.

The invention provides a laser radar and gamma camera integrated detection system based on a shared SiPM array, and belongs to the field of detector equipment. The system comprises a laser emission module, a gamma camera, an optical module, an SiPM array detection module, a signal processing module and a control module. Wherein the optical module controls high-frequency pulse laser of the laser emission module to scan a target scene, respectively guides a reflected laser beam and a scintillation light signal emitted by the gamma camera to the SIPM array detection module for photoelectric conversion to generate an electric signal, and performs gain and time gate adjustment according to a sensor working mode to obtain a first electric signal; the signal processing module receives the first electric signal and carries out laser radar ranging calculation and gamma camera imaging processing to obtain three-dimensional point cloud data and a radioactivity distribution image of the target scene. According to the invention, efficient fusion of functions of the laser radar and the gamma camera is realized, the size and weight of the system are greatly reduced, and the manufacturing and maintenance cost is also reduced.

The invention discloses an automatic calibration method and system for a mining laser gas detector, and relates to the technical field of instrument calibration. The method comprises the following steps: dividing detection beam parameters into measurement beam parameters and reference beam parameters; enabling the measurement light beam parameter to penetrate through the to-be-measured gas area to obtain a measurement signal, and enabling the reference light beam parameter to penetrate through the reference gas chamber to obtain a reference signal; performing photoelectric conversion calculation on the reference signal to obtain a gas concentration detection value; the gas concentration detection value is compared and analyzed with a reference data value according to the central wavelength position of the mining laser gas detector, and a calibration unit is activated according to a comparison result; and automatically correcting the mining laser gas detector, generating a correction parameter set, calculating a measurement signal, and generating a concentration value of the gas to be detected. The technical problems of low calibration efficiency and unstable calibration precision of the mining laser gas detector in the prior art are solved, and the technical effects of realizing automatic calibration of the mining laser gas detector and improving the calibration efficiency and precision are achieved.

An apparatus including an image sensor that photoelectrically converts visible light and invisible light. Image data output by the image sensor is separated into visible light image data and invisible light image data. In a first process, an invisible light flicker period is detected from the invisible light image data, and the image sensor is controlled, based on the detected invisible light flicker period, such that invisible light flicker is not generated in the image data, and in a second process, a visible light flicker period is detected from the visible light image data separated in a state in which invisible light flicker is not generated in the image data, and the image sensor is controlled, based on the invisible light flicker period and the detected visible light flicker period, such that invisible light flicker and visible light flicker are not generated in the image data.

The invention belongs to the technical field of hardware-in-loop simulation testing, and particularly relates to a hardware-in-loop interface board card. According to the hardware-in-the-loop interface board card disclosed by the invention, mutual conversion between a simulation machine input / output low-voltage signal and a controller output / input high-voltage signal is realized through a simulation machine signal photoelectric conversion sending circuit and a controller signal photoelectric conversion sending circuit in the signal conditioning module; the low-voltage signal output by the simulation machine interface can indirectly control the high-voltage signal input into the controller interface, and the high-voltage signal output by the controller interface can be converted into the low-voltage signal matched with the simulation machine interface, so that the problems of specification difference and signal matching difference between the IO interface and the controller interface are solved; the low-voltage simulator system is electrically isolated from the high-voltage controller system, so that the influence of the high-voltage controller on the simulator is avoided; and in the aspect of structural design, the hardware-in-the-loop interface board card is divided into an upper layer board and a lower layer board, so that the occupied area is reduced.

This solar battery (25) has a plurality of solar cells (20-20) in which a first electrode (3), a photoelectric conversion layer (4), and a second electrode (8) are disposed in said order on one surface of a substrate (2), and layers formed on the one surface of the substrate (2) are divided by a plurality of separation grooves (P1-P3). The plurality of separation grooves (P1-P3) include a separation groove (P2) for electrode connection which is for electrically connecting the first electrode (3) and the second electrode (8), and the separation groove (P2) for electrode connection has at least two portions (T(1)-T(n)) having different depths.

The invention discloses a fast neutron imaging detector and a detection system, and belongs to the technical field of ray detection, the fast neutron imaging detector comprises a wave-shifting optical fiber array, scintillators and a photoelectric conversion array, the wave-shifting optical fiber array comprises a plurality of crisscrossed wave-shifting optical fibers, and gaps among the wave-shifting optical fibers are filled with the scintillators; and each photoelectric detector in the photoelectric conversion array is correspondingly coupled with the wave-shifting optical fiber. The detection efficiency of fast neutrons is effectively improved by increasing the thickness of the sensitive area of the detector, meanwhile, the collection efficiency of photons generated in the sensitive area of the detector can be remarkably improved through the crisscrossed wave-shifting optical fiber array, and the position information of a detection event can be accurately obtained in combination with a gravity center positioning method. Compared with a traditional fast neutron imaging detector based on combination of a camera and a conversion screen, the imaging detector has the advantages of fast response, large sensitive area, high detection efficiency and the like.

The invention belongs to the technical field of preparation of isocyanate polymerization products, and discloses a method for preparing a photosensitive polyion liquid photoelectric device through dispensing. The method comprises the following steps: firstly, preparing a photosensitive material and ionic liquid, and carrying out polymerization reaction on the photosensitive material and the ionic liquid to obtain a polyionic liquid photoelectric conversion material; and sequentially printing the first conductive layer, the polyion liquid photoelectric conversion material and the second conductive layer through a microelectronic printer to obtain the photosensitive polyion liquid photoelectric device. According to the invention, the preparation process is obviously simplified, and programmed control and batch production can be realized; and the consistency of photoelectric properties of the device is improved.

The embodiment of the invention provides a method for determining optical transmission performance, the method is applied to a first device, and the method comprises the following steps: receiving an optical signal sent by a second device through an optical module, and performing photoelectric conversion on the optical signal to obtain a first electric signal; adding first noise to the first electric signal to obtain a second electric signal. And performing FEC decoding on the second electric signal to determine a first bit error rate of the second electric signal. And determining an optical transmission performance parameter in combination with a quantitative relationship between the first bit error rate and the target bit error rate. The target bit error rate is a large bit error rate, and if the first bit error rate is equal to the target bit error rate, the bit error rate of the second electric signal is degraded to the target bit error rate after the first noise is added to the first electric signal, so that the first device can determine an optical transmission performance parameter for measuring the optical transmission performance according to the first noise. Therefore, by using the scheme of the embodiment of the invention, the optical transmission performance can be determined.

The invention discloses a photovoltaic power station emission reduction and carbon sequestration evaluation method and system based on an STILT mode, and relates to the technical field of photovoltaic power station emission reduction and carbon sequestration evaluation, and the method comprises the steps: carrying out the parameterization of the data of a photovoltaic panel, considering the albedo and surface roughness of the panel, and obtaining the parameters of a photovoltaic power station; according to the parameters of the power station, fitting a photovoltaic output model by using a least square method, and representing a photoelectric conversion process; the carbon emission reduction amount is calculated according to the power generation amount of the power station in combination with marginal emission factors, and the vegetation carbon sink below the photovoltaic panel is evaluated by using a WRF-STILT model. According to the method, the main physical process in the photovoltaic power station can be accurately represented, a simple photovoltaic land surface process mode is established, and reference is provided for climate mode analysis; and meanwhile, the carbon emission reduction and carbon sink effects of the photovoltaic power station are evaluated, so that the evaluation is more accurate. According to the method, more accurate concentration contribution source area distribution is obtained through multiple nested simulation, and important support is provided for photovoltaic power station carbon income and expenditure evaluation.

The invention discloses a photovoltaic inverter direct current component detection circuit, which relates to the technical field of photovoltaic detection, and comprises a photovoltaic inversion module used for photovoltaic conversion and inversion; the intelligent control module is used for signal receiving and module control; the detection control module is used for transmitting the input voltage and the output voltage of a switching element in the working of the upper half bridge or the lower half bridge of the photovoltaic inversion module; the first voltage drop module is used for calculating the voltage drop of an upper half-bridge switch element of the photovoltaic inversion module; the second voltage drop module is used for calculating the voltage drop of a lower half-bridge switch element of the photovoltaic inversion module; the voltage drop comparison module is used for voltage comparison; the output module is used for filtering and outputting electric energy; the component detection module is used for extracting the direct current signal and performing two-stage amplification; and the state judgment module is used for detecting positive and negative states of the direct current signal and carrying out voltage comparison. The photovoltaic inverter direct current component detection circuit can quickly and effectively detect the direct current component and automatically detect the generation reason of the direct current component.

A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

The GIS partial discharge acoustic-optical-electric combined detection composite sensor comprises a composite sensing device installed on a GIS, and the composite sensing device comprises a sealing plate, a dielectric layer plate, an upper polar plate, an optical fiber connector, a fluorescent optical fiber, a feed rod and a limiting device; the limiting device comprises a fixed ring seat, a rotating mechanism, a synchronizing mechanism and an adjustable limiting mechanism; the fixed ring seat is fixedly mounted on the lower surface of the sealing plate; the rotating mechanism is rotationally arranged at the bottom of the fixed ring seat; the synchronizing mechanism is rotationally arranged in the fixed ring seat; the adjustable limiting mechanism is arranged on the edge of the fixing ring base in a sliding and penetrating mode and meshed with the synchronizing mechanism. Through the adjustable limiting mechanism, the position of the sliding limiting seat is reasonably adjusted according to the thickness of the head of the bolt, so that it is guaranteed that the adjusted sliding limiting seat can make contact with and press the head of the bolt, using is more flexible, the signal conditioning amplifier and the photoelectric converter are matched, and the problem of false alarm of partial discharge is solved.

To ensure stable transfer capability. A photodetector includes a semiconductor layer having a first surface and a second surface located on opposite sides, a photoelectric conversion unit in the semiconductor layer that converts, through photoelectric conversion, light incident from a second surface side of the semiconductor layer, a charge holding unit on a first surface side of the semiconductor layer, a transfer transistor that includes a gate electrode and that transfers signal charge generated by the photoelectric conversion unit through the photoelectric conversion to the charge holding unit, and an isolation region on the first surface side of the semiconductor layer. The gate electrode includes a head on the first surface side of the semiconductor layer and legs that extend from the head in a thickness direction of the semiconductor layer and that are in the isolation region adjacent to the semiconductor layer via a gate insulating film.

The invention discloses a frequency spectrum refining frequency point tracking type optical frequency domain reflection distributed sensing method, which comprises the following steps of: inputting probe light into a sensing optical fiber engraved with weak reflection points to obtain backscattered light; carrying out coherent frequency mixing on the backscattered light and the reference light, and then carrying out photoelectric conversion to obtain an electric signal containing weak reflection point information; aD sampling is carried out on the electric signal containing the weak reflection point information, and a first discrete signal sequence is obtained; performing frequency spectrum refinement on the first discrete signal sequence to obtain a refined beat frequency spectrum; performing peak searching operation on the refined beat frequency spectrum to obtain weak reflection beat frequency points at different positions in different measurement periods; extracting phase values of beat frequency points of weak reflection points at different positions in different measurement periods by utilizing Hilbert transform; and carrying out phase demodulation on the phase values of the beat frequency points of the weak reflection points at different positions in different measurement periods to obtain the change condition of parameters measured by the sensing optical fiber. Errors caused by the Doppler effect can be eliminated.

The invention relates to a P-type double-sided passivation selective contact TOPCon cell structure and a preparation method thereof, and belongs to the technical field of solar cells. According to the cell prepared by the invention, the short-circuit current and the photoelectric conversion photoelectric efficiency are improved, a polycrystalline silicon doping layer and a tunneling oxide layer in a non-metal contact region outside a front electrode position are removed through laser film opening, and a selective local contact structure is formed in a metal contact region at the electrode position; current parasitic absorption and contact recombination between metal and the surface of crystalline silicon are reduced; the PN junction is manufactured on the back face, front face light absorption is prevented from being affected, low-power laser is adopted to ensure that the back face PN junction is not damaged by the laser in a non-metal contact area outside the back face electrode position, and then back face current parasitic absorption is greatly reduced by etching and cleaning a back face tunneling oxide layer of the area.