3526 results about "Photoelectric conversion" patented technology

The invention relates to the technical field of optical lens defect detection, and particularly discloses an optical lens laser-induced damage on-line detection method and system, a linear polarizer and a narrow-band filter are connected in series in a detection laser light path, non-target polarized light is filtered through polarization direction matching, meanwhile, interference of the environment and scattered light is inhibited through the narrow-band filter, and the laser-induced damage on-line detection system is obtained. According to the method, external source noise such as ambient light and non-target polarized light is reduced through polarization matching and narrow-band filtering, randomness of speckle noise is offset through multi-angle collection and signal fusion in a visual detection mode, exposure is dynamically adjusted, an image is fused to improve the signal-to-noise ratio, noise and real signals are decoupled through self-supervised learning, and the real-time performance of the system is improved. Dust interference is removed in combination with morphological operation; a deep learning reasoning model enhances the damage identification capability in a noise environment, defocusing blur caused by mechanical vibration is eliminated through phase conjugate correction, and the influence of photoelectric conversion noise, dust interference and the like on the detection efficiency and accuracy is remarkably reduced through multi-link linkage.

Luminance information and luminance change information are obtained at the same timing with high resolution. In one example, a solid-state imaging device includes pixels and a control circuit. Each of the pixels includes a photoelectric conversion element that generates an electrical signal based upon incident light, a first pixel circuit that converts the electrical signal into first information, and a second pixel circuit that converts the electrical signal into second information. The control circuit controls each of the pixels such that the photoelectric conversion element is connected to either the first pixel circuit or the second pixel circuit.

A light absorber 10 has a transmission spectrum satisfying the following requirements (I), (II), (III), (IV), and (V) at an incident angle of 0°. The light absorber 10 has a haze less than 0.20%. (I) An average transmittance TA0deg(460-600) is 75% or more. (II) A shorter cut-off wavelength λH0deg(s) is in a range of 390 nm to 450 nm. (III) A longer cut-off wavelength λH0deg(L) is in a range of 600 nm to 680 nm. (IV) An average TA0deg(300-380) is 1.2% or less. (V) An average TA0deg(750-1000) is 1.2% or less.

The invention discloses an intelligent silicon controlled rectifier voltage conversion circuit, which relates to the technical field of voltage conversion, and comprises a photovoltaic module, a micro-control module, a power regulation module, a first voltage threshold, a second voltage threshold, a second voltage threshold, a third voltage threshold, a fourth voltage threshold, a fifth voltage threshold and a sixth voltage threshold, when the converted electric energy is larger than a first voltage threshold value, the access control module transmits the electric energy output by power regulation, superposes the electric energy output by double-path electric energy coupling and stores the superposed electric energy by the energy storage module, and when the converted electric energy is smaller than the first voltage threshold value and larger than a second voltage threshold value, the access control module outputs the superposed electric energy. And when the voltage is smaller than a second voltage threshold value, electric energy coupling is stopped, the power regulation module is controlled to carry out power regulation on the electric energy released by the energy storage module, and power is supplied to the output module. According to the intelligent silicon controlled voltage conversion circuit, the utilization rate of photovoltaic electric energy can be improved, and the voltage gain and the power supply efficiency are improved.

The invention discloses an automatic calibration method and system for a mining laser gas detector, and relates to the technical field of instrument calibration. The method comprises the following steps: dividing detection beam parameters into measurement beam parameters and reference beam parameters; enabling the measurement light beam parameter to penetrate through the to-be-measured gas area to obtain a measurement signal, and enabling the reference light beam parameter to penetrate through the reference gas chamber to obtain a reference signal; performing photoelectric conversion calculation on the reference signal to obtain a gas concentration detection value; the gas concentration detection value is compared and analyzed with a reference data value according to the central wavelength position of the mining laser gas detector, and a calibration unit is activated according to a comparison result; and automatically correcting the mining laser gas detector, generating a correction parameter set, calculating a measurement signal, and generating a concentration value of the gas to be detected. The technical problems of low calibration efficiency and unstable calibration precision of the mining laser gas detector in the prior art are solved, and the technical effects of realizing automatic calibration of the mining laser gas detector and improving the calibration efficiency and precision are achieved.

The invention discloses an array type optical fiber ultrasonic imaging system based on multi-path delay parallel detection, and belongs to the technical field of ultrasonic detection and imaging. The main working process of the system is as follows: continuous laser output by a laser is modulated into pulse laser to be transmitted to an optical fiber ultrasonic detector array, and ultrasonic waves emitted by an ultrasonic wave generating device act on each detection array element to cause the property change of a detection optical signal; through multi-path time delay with the optical fiber as the medium, the detection optical signal forms different transmission time in each channel, is distinguished in a time division mode and is combined into a single path to be output. After photoelectric conversion, electric signals containing multi-channel detection information are collected in parallel, the signals are analyzed at a terminal processor by means of an imaging algorithm with an array parallel architecture, information of a to-be-detected target is obtained, and image reconstruction is completed. The array type optical fiber ultrasonic imaging system has the advantages of being accurate and rapid in scanning detection, simple and compact in system structure and efficient and high-quality in image reconstruction, and large-scale and low-cost array type optical fiber ultrasonic imaging is achieved.

The invention discloses an underwater magnetic field measuring device based on a diamond NV color center. The underwater magnetic field measuring device comprises a diamond NV color center module, an incident laser excitation module, a multi-path optical coupling module, a microwave excitation module, a fluorescence acquisition and photoelectric conversion module, a signal processing and control module and a magnetic field module, the multi-path optical coupling module is used for dividing an optical fiber into multiple paths and collecting fluorescence generated by the diamond block; the microwave excitation module is used for switching between two single-quantum resonance frequencies to drive an NV color center to realize double-quantum DQ reading; and the signal processing and control module comprises an FPGA (Field Programmable Gate Array) processing unit of a field programmable logic array chip. According to the invention, a dual-quantum DQ working point of a diamond NV color center is used as a measurement channel, common-mode influence of D is removed through differential measurement, the problem of D drift caused by temperature drift, stress and material aging is physically and obviously inhibited, and the device can still realize ultrahigh-sensitivity measurement in a complex underwater environment.

A light detection apparatus according to an embodiment of the present disclosure includes a semiconductor substrate, a light receiver, a trench, a multiplier that is a first electrically-conductive type, and a contactor. The semiconductor substrate has a first surface and a second surface facing each other, and has a pixel array in which a plurality of pixels is disposed into an array shape in an in-plane direction. The light receiver is provided inside the semiconductor substrate for each of the pixels, and generates, through photoelectric conversion, carriers in accordance with an amount of light received. The trench is provided, for each of the pixels, to the first surface of the semiconductor substrate. The multiplier that is the first electrically-conductive type is provided to a bottom surface of the trench, and allows the carriers generated in the light receiver to undergo avalanche multiplication. The contactor includes an electrically-conductive material buried in the trench, and is in contact with the multiplier.

The invention relates to an optical time domain reflectometer and a control method of the optical time domain reflectometer, and relates to the technical field of photoelectricity. The optical time domain reflectometer OTDR comprises a single photon detector, and the OTDR is used for being connected with an optical fiber to be measured; the OTDR is further used for sending a plurality of detection signals to the optical fiber to be detected in sequence and receiving a plurality of detection echo signals from the optical fiber to be detected in sequence, and the detection echo signals are used for indicating the transmission state of the same section of transmission area in the optical fiber to be detected; performing amplitude reduction processing on each detection echo signal at a certain time interval to obtain a processed detection echo signal; the positions, corresponding to the same section of transmission area, of the signal sections subjected to amplitude reduction processing in the different processed detection echo signals are not completely the same; each processed detection echo signal is subjected to photoelectric conversion based on the single-photon detector to obtain a first electric signal, a first OTDR oscillogram is output based on the multiple first electric signals, and the first OTDR oscillogram is used for indicating the transmission state of the same section of transmission area. Therefore, the problem of OTDR curve distortion can be solved.

An optical frequency domain reflectometer with environmental disturbance resistance and large strain measurement capability belongs to the field of distributed optical fiber sensing and comprises an opposite sweep frequency light frequency modulation continuous wave signal generation module, a light splitting device, a modulation device, a circulator, a polarization controller, an optical coupling device, a photoelectric conversion module and a data acquisition and processing module. An optical signal generated by an opposite sweep frequency light frequency modulation continuous wave signal generation module is divided into probe light and local oscillation light through a light splitting device, the probe light is modulated through a modulation device and sent to an optical fiber through a circulator, and a Rayleigh back scattering light signal generated by the optical fiber and the local oscillation light interfere in an optical coupling device to obtain interference light; the photoelectric conversion module mixes beat frequency signals of interference light, and the data acquisition and processing module analyzes and processes the beat frequency signals. According to the invention, the position information of the Rayleigh backscattering point is marked by using the modulated probe light, the Rayleigh scattering signal at the corresponding position is restored, crosstalk between channels is inhibited, and high-precision measurement in a large dynamic range and resistant to environmental disturbance is realized.

The invention relates to the technical field of battery simulation, in particular to a solar battery simulation method and system. The method comprises the following steps: obtaining solar cell structure data; dividing the surface of the battery into a plurality of subunits based on the solar battery structure data, initializing electrical parameters of each subunit, and generating a battery partition parameter set; acquiring global incident light intensity information, and calculating ray tracing of intersection points of rays of each battery surface unit and a plane through the battery partition parameter set to obtain local light intensity distribution data; performing photoelectric conversion parameter mapping on the local light intensity data to obtain partitioned photo-generated current data; and constructing an equivalent circuit model of the solar cell by using the partitioned photo-generated current data. According to the method, the problem of insufficient precision caused by model simplification and uneven illumination in existing solar cell simulation is solved by refining structure partitioning, precise ray tracing, multi-subunit equivalent circuit combination and system performance evaluation.

A solar cell includes a first photoelectric conversion part, a second photoelectric conversion part, a side insulating layer, a first electrode, and a second electrode. The first photoelectric conversion part includes a photoelectric conversion layer composed of a perovskite compound, a first transport layer on one side of the photoelectric conversion layer, and a second transport layer on the other side of the photoelectric conversion layer. The second photoelectric conversion part is arranged below the second transport layer and has a different material or structure from the first photoelectric conversion part. The side insulating layer is formed as a side surface surrounding the first photoelectric conversion part. The first electrode is electrically connected to the first photoelectric conversion part on one surface of the first photoelectric conversion part serving as a light-receiving surface. The second electrode is electrically connected to a bottom of the second photoelectric conversion part.

The invention discloses a photovoltaic ecological system based on a holographic frequency division technology. The photovoltaic ecological system comprises a frame body; the frequency-division concentrating photovoltaic unit comprises a substrate layer which is formed by connecting a heat conducting plate and a dodging plate and is connected with the frame body through a reciprocating motion mechanism, a concentrating layer and a holographic grating layer which are sequentially arranged above the heat conducting plate, and a photoelectric conversion battery arranged on the heat conducting plate; the light adjusting unit is arranged between the two adjacent frequency division concentrating photovoltaic units and comprises two frequency division plates connected through a rotating pair, and the ends, away from each other, of the two frequency division plates are connected with the corresponding frequency division concentrating photovoltaic units through rotating pairs; the reflective optical baffles are arranged on the two sides of the substrate layer, and side wall batteries are further arranged on the sides, close to the light adjusting units, of the reflective optical baffles. According to the invention, through a spectrum frequency division and space light energy distribution mechanism, multi-band efficient utilization of sunlight is realized, the light quality and the light quantity required by plant photosynthesis are guaranteed, and the photovoltaic power generation efficiency is improved.

A camera module includes an imaging lens assembly module and an image sensor. The image sensor is disposed on an image surface of the imaging lens assembly module and includes a photoelectric converting layer, a micro lens arrays layer, a light filtering layer and an anti-reflecting layer. The photoelectric converting layer is for converting a light signal to an electric signal. The micro lens arrays layer is for converging an energy of the imaging light into the photoelectric converting layer. The light filtering layer is for absorbing a light at a certain wavelength region of the imaging light. The anti-reflecting layer is disposed on a surface of at least one of the light filtering layer and the micro lens arrays layer and includes an irregular nano-crystallite structure layer and an optical connecting layer. The optical connecting layer is connected to the irregular nano-crystallite structure layer.

An image sensor including a substrate having first and second surfaces, the second surface opposite the first surface; a first deep trench isolation layer in the substrate and defining pixel region groups, each pixel region group having a pair of pixel regions; a second deep trench isolation layer between the pair of pixel regions of each pixel region group; photoelectric conversion areas in each pixel region; and a lens array on the second surface and composed of two-dimensionally arranged microlenses. Each microlens having a shape, in plan view, with a long axis and a short axis, the short axis being substantially perpendicular to the long axis and shorter than the long axis. The microlenses covering each pixel region group, and a width of at least a first portion of the second deep trench isolation layer being smaller than a width of the first deep trench isolation layer.

A photoelectric conversion device includes a substrate, a photoelectric conversion unit arranged in the substrate and configured to generate charges corresponding to incident light, and a pixel isolation portion arranged in the substrate and isolating the photoelectric conversion unit from other elements. A sidewall of the pixel isolation portion has a plurality of depressions and protrusions in a cross-sectional view. A period of at least a part of the plurality of depressions and protrusions is greater than ½ of a wavelength of light to which the photoelectric conversion unit has sensitivity.

Noise is reduced. A solid-state imaging device includes a photoelectric conversion unit that generates charge corresponding to an amount of received light, a transfer unit that transfers the charge generated by the photoelectric conversion unit, a charge storage unit that stores the charge transferred by the transfer unit, an amplifying transistor that amplifies a signal corresponding to the charge stored in the charge storage unit, and an isolation portion that isolates the photoelectric conversion unit, the amplifying transistor has a gate electrode including two vertical gate electrode portions provided in a depth-wise direction from a first surface of a semiconductor layer to sandwich a channel region therebetween, the isolation portion includes at least a first isolation portion provided in a first groove provided in the depth-wise direction from the first surface, and an insulating layer provided on a side of one of the two vertical gate electrode portions opposite to the channel region is provided to overlap at least a part of the first isolation portion when viewed in the depth-wise direction.

The present disclosure relates to an image sensor and / or a method for manufacturing the same. The image sensor may include a substrate including a first surface, a second surface opposite the first surface, and a plurality of unit pixel regions in the substrate; a pixel defining pattern; and a micro lens. Each of the plurality of unit pixel regions may include a photoelectric conversion layer. The pixel defining pattern may extend through the substrate in a first direction so as to define each of the unit pixel regions. The micro lens may be on the second surface of the substrate and corresponding to the unit pixel regions. The pixel defining pattern may include a first conductive layer and a second conductive layer spaced apart from the first conductive layer.

The invention discloses a high-spatial-resolution distributed optical fiber sound wave sensing system based on FPGA real-time demodulation. The system comprises a narrow linewidth laser source module, a first coupler, a high-bandwidth sweep frequency signal modulation module, a circulator, a coherent receiving and photoelectric conversion module and an FPGA integrated module. A laser source emitted by the narrow linewidth laser source module is divided into about 10% of reference light and about 90% of detection light through the first coupler. The FPGA integrated module is connected with the high-bandwidth sweep frequency signal modulation module, and transmits a sweep frequency radio frequency pulse signal and a frequency shift radio frequency pulse signal to the high-bandwidth sweep frequency signal modulation module; the high-bandwidth sweep frequency signal modulation module is connected with the sensing optical fiber through the circulator so as to output sweep frequency optical pulses; the sensing optical fiber is connected with the coherent receiving and photoelectric conversion module through the circulator to transmit Rayleigh backscattered light; the coherent receiving and photoelectric conversion module is connected with the FPGA integrated module, and the FPGA integrated module carries out signal processing to obtain vibration information on the optical fiber.

The invention relates to the technical field of weak signal conditioning circuits, and discloses a multi-light-source spurious noise suppression circuit based on a laser sensor and a signal conditioning method, and the circuit comprises a photoelectric conversion module which is used for converting a received optical signal into a current signal; the transimpedance conversion module is connected with the photoelectric conversion module, converts the current signal into a first voltage signal and suppresses common-mode noise; the first-stage amplification module is used for carrying out linear amplification on the first voltage signal and outputting a second voltage signal; the programmable filtering module is used for carrying out high-frequency noise suppression on the second voltage signal; the reverse phase adjusting module is used for adjusting the phase and the amplitude of the filtered signal so as to adapt to a post-stage load; and the feedback control module analyzes the frequency spectrum of the output signal in real time and dynamically adjusts the cut-off frequency of the programmable filtering module. The invention aims to solve the problems that in the prior art, a laser sensor circuit is poor in anti-interference performance in a multi-light-source environment, and measurement is inaccurate due to spurious noise.

An image sensor is provided. The image sensor includes: a photoelectric conversion region in a semiconductor substrate; a photocharge collection region provided in the photoelectric conversion region; a floating diffusion region in the semiconductor substrate that is spaced apart from the photocharge collection region along a vertical direction; a charge multiplication region between the photocharge collection region and the floating diffusion region; and a vertical gate electrode which extends into the semiconductor substrate and overlaps the photocharge collection region along the vertical direction. A side surface of the vertical gate electrode is adjacent to the floating diffusion region and the charge multiplication region.

The invention belongs to the technical field of connectors, and particularly relates to a photoelectric conversion connector with an optical port decoupling function, which comprises a connector shell and an insulator part arranged in the connector shell, the insulator part comprises an insulator and a contact element inserted on the insulator, a partition plate is arranged in the connector shell, a photoelectric conversion module is arranged on the partition plate, and the connector shell is provided with an optical port. The photoelectric conversion module is electrically connected with the contact element and comprises an optical fiber socket, the tail part of the connector is connected with an optical cable, the end part of an optical fiber in the optical cable is provided with an optical fiber plug used for being inserted into the optical fiber socket, and the optical fiber plug is limited and fixed on an optical fiber plug limiting block; the optical fiber plug limiting block can be detachably connected to the partition plate. The optical fiber plug is positioned and fixed on the optical fiber plug limiting block, optical signal transmission is realized through the optical fiber plug and the optical fiber socket, optical port decoupling is further realized, and on-site disassembly and maintenance are facilitated.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the solar cell comprises a substrate, and a first transmission layer, a perovskite layer, a second transmission layer and a silver-carbon composite electrode which are sequentially arranged on the substrate, the silver-carbon composite electrode is located on the surface of the second transmission layer, and the silver-carbon composite electrode comprises a first electrode layer and a second electrode layer, the first electrode layer comprises a conductive polymer and a carbon material, the second electrode layer comprises silver, and the thickness of the second electrode layer is 10-20 nm. The solar cell provided by the invention has higher photoelectric conversion performance and lower manufacturing cost.

The invention discloses a photovoltaic car shed integrated device and a using method thereof, and belongs to the technical field of photovoltaic power generation and building integration. Comprising an intelligent photovoltaic power generation module which realizes efficient photoelectric conversion and has the functions of shed sunshade and rainwater collection; the power conversion module executes efficient bidirectional power conversion and intelligent flow direction control among three ports of photovoltaic power generation, an energy storage battery and a charging load; the intelligent energy storage management module realizes safe and reliable operation and service life maximization of an energy storage battery; the intelligent charging service module is used for dynamically adjusting the charging power and realizing intelligent charging scheduling through user behavior learning; the predictive energy management module is used for realizing real-time prediction and optimal scheduling of generated power and load requirements and maximizing economic benefits; the modular structure integrated module supports quick installation, independent maintenance and flexible expansion of each functional module through a standardized interface design and a quick-plug connector, and provides unified mechanical support and environmental protection at the same time.

Designs of image sensing devices by including a substrate layer including a plurality of photoelectric conversion elements, a plurality of grid structures disposed over the substrate layer, a plurality of color filter layers each of which is disposed between adjacent grid structures, a plurality of over-coating layers formed over the color filter layers, and a plurality of microlenses formed over the over-coating layers. Each of the grid structures includes an air layer, and a capping film formed to cap the air layer, and an upper portion of the air layer is formed to protrude upward from the over-coating layer.

A calibration system and related methods for optical phased array chips. The calibration system includes an adjustable mount module, an infrared microscopic observation module, an arrayed driver module, a two-dimensional laser beam scanning module, a photoelectric conversion module and an upper computer, and utilizes computer-vision-enabled positioning and phase error compensation algorithms as software components. Collimated laser is emitted from the target beamforming angle and aimed at the emission aperture of the chip, and is subsequently sampled by the array elements in a reversed injection manner. Based on the reciprocity of light propagation, by maximizing the power reversely output from the bus waveguide of the optical phased array chip, beamforming at the target angle is achieved supported by software implementations of optimization algorithms. The system and related methods are readily achievable, highly automated, and offers fast and batch calibration with relatively low expenses, good flexibility and long-term compatibility.

The invention provides a preparation method of a PdSe2 / Bi2O2Se Van der Waals heterojunction self-driven photoelectric detector, and relates to construction of a two-dimensional material heterostructure and application of the two-dimensional material heterostructure to a photoelectric device. The method comprises the following steps; the preparation method comprises the following steps: preparing nanosheets through a chemical vapor deposition (CVD) process; respectively preparing a PdSe2 nanosheet and a Bi2O2Se nanosheet by adopting the CVD process; and preparing a heterostructure: transferring the PdSe2 nanosheet to the surface of the Bi2O2Se nanosheet in a dry transfer mode to form a Van der Waals heterojunction structure with a clean interface and tight interlayer coupling. The transfer technology keeps the lattice and morphology of the two-dimensional material complete, and reduces organic residues and solvent pollution influences. The heterojunction structure is combined with the narrow band gap of PdSe2 and the broad spectrum response characteristic of Bi2O2Se, and efficient photoelectric conversion from visible light to near-infrared light is achieved. And an electric field is built in the p-n type heterojunction, so that the device is self-driven without external bias voltage, and has the performance of low power consumption and the like. And the method is low in process thermal budget, high in compatibility and suitable for various substrates, and a technical path is provided for construction of the flexible photoelectric detector.

The invention relates to the technical field of high-energy physics and particle detection, and discloses a cosmic ray muon detector based on non-optical coupling, the cosmic ray muon detector comprises a plurality of detection layers, each detection layer comprises a plurality of columns of detection units arranged in parallel, each column of detection units is formed by aligning and arranging a plurality of scintillator strips end to end in a mechanical mode, and optical coupling does not exist between the adjacent scintillator strips; each detection unit is provided with a wavelength shift optical fiber group, and the wavelength shift optical fiber groups are fixed through mechanical clamping grooves formed in the side faces of the scintillator strips and are continuously laid along the whole column of detection units; the light emitting end of the wavelength shift optical fiber group is coupled to the photoelectric conversion module. According to the invention, mechanical splicing without optical coupling is adopted to construct a long detection column, so that the detector can be quickly assembled and deployed on site by using a standard assembly which is low in cost and easy to transport, and high cost, high risk and complex process of precise optical coupling of a long-strip-shaped scintillator are thoroughly avoided.

The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

A solid-state imaging device includes: a pixel array in which a plurality of pixels are arranged in rows and columns; and a first power supply line. Each of the plurality of pixels includes a photoelectric converter, a floating diffusion, a capacitance accumulator, a first transfer transistor, an overflow transistor, a second transfer transistor, a first reset transistor, and an amplifier transistor. The solid-state imaging device further includes a resetter for resetting the floating diffusion and the capacitance accumulator at voltages different from each other.