The invention discloses a method for improving the heat dissipation performance of an AlGaInP
red light Micro LED
chip. The method comprises the following steps: S1, preparing an epitaxial structure:
processing a substrate and a buffer layer, growing an
etching barrier layer and an
ohmic contact layer, and carrying out stacking
epitaxy on a functional layer; s2, patterning the
silicon-based substrate: preparing a
dielectric layer and a
metal structure; s3,
diamond ohmic contact layer integration:
processing a p-type conductive
diamond film layer, and carrying out
metal reflection and bonding; s4, removing the substrate and forming an n-type structure: stripping the substrate to be in n-type contact; s5, back-end
process integration: preparing an
electrode and an optical structure; according to the invention, the heat dissipation performance of the
chip is significantly improved; the series resistance is reduced by 30%-50%; the resistivity of the p / n type
diamond ohmic contact layer is reduced by 1-2 orders of magnitude compared with ITO; gaAs material light absorption and
metal shading are avoided, and the
red light transmittance is improved from 75% to more than 90% by combining with the
micro lens array; the method is compatible with existing MOCVD, CVD and photoetching processes, large-scale production of wafers of 2-12 inches can be achieved, and the manufacturing cost is reduced.