2667results about "Piezoelectric/electrostrictive devices" patented technology

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

To provide an actuator device capable of stably obtaining desired drive characteristics even if, for example, an environment temperature is changed.SOLUTION: A metal board 3 supported by a wiring board includes: a movable part; a first extension part 33; a first connection part 35 for connecting the first extension part 33 to the movable part; and a first connection part 37 connected to the first extension part 33. The first connection part 37 includes: a first fixed area 371 fixed to the wiring board; and a first connection area 372 connected to the first extension part 33 and the first fixed area 371. The first connection area 372 includes a first bent part 372c. The first bent part 372c includes a first outer edge P1 in the movable part side and a second outer edge P2 in a side opposite to the movable part, and each of the first outer edge P1 and the second outer edge P2 is bent to the movable part side when viewed from a Z-axis direction.SELECTED DRAWING: Figure 6

A method of making an acoustic sensor (e.g., a piezoelectric sensor for a piezoelectric microelectromechanical systems microphone) includes forming or depositing one or more piezoelectric layers to define a beam extending between a proximal portion and a distal tip (e.g., unsupported free end), the beam having a width in plan view that is greater at a location distal of the proximal portion than at the proximal portion. The method also comprises attaching the beam to a substrate in cantilever form so that the proximal portion of the beam is anchored to the substrate and the distal tip is a free unsupported end of the beam. One or more electrodes are disposed on or in the proximal portion of the beam.

The present application relates to a micromechanical component (1) and a method for producing a micromechanical component (1). The proposed micromechanical component (1) comprises a layered structure and at least one piezoelectric element (10). The piezoelectric element (10) contains a first electrode (5) and second electrode (27) for generating and / or detecting deflections of a deflection element (16). The deflection element (16) is connected to a holder (17). The layered structure of the micromechanical component (1) comprises a silicon substrate (2), a conductive semiconductor layer (26), a piezoelectric layer (7) and a conductive layer film (12). The conductive semiconductor layer (26) forms the first electrode (5) and the conductive layer film (12) forms the second electrode (27) of the piezoelectric element, wherein the conductive semiconductor layer (26) at the same time forms a carrier layer (28) for the deflection element (16).

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The invention relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof.The preparation method comprises the steps that Ti metal serves as a radio frequency target material and is subjected to first sputtering deposition treatment on a substrate, and a Ti adhesion layer is formed; forming a bottom electrode on the Ti adhesion layer; taking PbxZr0. 52Ti0. 48O3 ceramic as a radio frequency target material, carrying out second sputtering deposition treatment on the bottom electrode, and carrying out rapid heat treatment to form a PZT seed layer; and carrying out third sputtering deposition treatment on the PZT seed layer by taking PbxZr0. 52Ti0. 48O3 ceramic as a radio frequency target material, carrying out rapid heat treatment, and repeating the step to form the lead zirconate titanate film. According to the method, the substrate tray is not additionally heated in the process of sputtering and depositing the PZT thin film material, so that the loss and volatilization of PbO are reduced, and the stability of thin film components can be effectively maintained; the PZT seed layer is utilized to provide more crystal nucleuses, so that the uniform crystallization of the PZT film is promoted, the crystallization quality and the electrical property of the PZT film are improved, the grain boundary defect is reduced, and the adhesive force and the stability of the film and the substrate are enhanced.

An acoustic sensor device includes a substrate, a cavity formed in the substrate, and a microelectromechanical system (MEMS) transducer having a diaphragm supported by the substrate. The diaphragm includes a first portion configured to be fixed to the substrate and a second portion extending from the first portion and suspended over the cavity. The second portion is configured to vibrate when the MEMS transducer is subject to an external stimulus. The diaphragm also includes an anchor portion that attaches the first portion of the diaphragm to the substrate on at least two sides of the substrate such that an interface between the first portion of the diaphragm and the second portion of the diaphragm is moved away from an edge of the substrate along the cavity.

The invention relates to the field of pressure (0-200 kPa) detection, in particular to an MEMS integrated pressure sensing device or a monolithic integrated multi-frequency capacitive micromachined ultrasonic transducer (CMUTs) for wide-range pressure measurement. According to the monolithic integrated multi-frequency CMUTs, a first CMUTs, a second CMUTs and a third CMUTs are integrated on a chip; by adjusting the diaphragm thickness, cavity height and diaphragm radius of the first, second and third CMUT units and the pressure value in the cavity of the second CMUT unit, the first and second CMUT units work in a linear range of small deflection deformation, and the third CMUT unit works in a linear range of large deflection deformation. And the working ranges of the first CMUT unit, the second CMUT unit and the third CMUT unit form a continuous and complete measurement interval, and the resonant frequencies are not overlapped, so that the integrated pressure sensing device which can be used for 0-200 kPa full-pressure range measurement is realized.

A microelectromechanical system (MEMS) accelerometer incorporates deformation sensing with a plurality of sense electrodes positioned to facilitate determining a deformation pattern (e.g., asymmetric or symmetric) of an underlying substrate layer relative to a MEMS layer. The deformation pattern of the substrate layer contributes to offset and / or sensitivity of the accelerometer, so the determination of the deformation pattern enables processing circuitry to compensate and improve offset and / or sensitivity stability. Tilt sense electrodes and / or comparison electrodes may be incorporated alongside the plurality of sense electrodes to monitor deformation of the substrate layer relative to a fixed portion of the MEMS layer.

The present invention features a micrometer-scale torsion balance device comprising a rigid mass and two or more nanoribbons attached to the rigid mass. The rigid mass may be suspended by the two or more nanoribbons. The two or more nanoribbons may be placed under tensile stress. A local acceleration value may be derived from a torsional stiffness of the two or more nanoribbons. In some embodiments, the rigid mass may comprise silicon. In some embodiments, the two or more nanoribbons may comprise silicon nitride. In some embodiments, the rigid mass may have a polygon shape, the polygon shape having four or more sides. A side of the four or more sides may be longer than all others.

A probe including a shell, an ultrasonic transducer unit, and at least one circuit board is provided. The ultrasonic transducer unit is disposed in the shell and includes a substrate, a vibrating membrane, and an anti-resonance structure. The vibrating membrane is disposed on the substrate and forms a cavity with the substrate. The anti-resonance structure is disposed on one side of the substrate facing away from the vibrating membrane and includes a hard layer and a glue layer connected to each other. The density of the glue layer is different from the density of the hard layer. The at least one circuit board is electrically coupled to the ultrasonic transducer unit. A method of fabricating the ultrasonic transducer unit is also provided.

A MEMS microphone includes a substrate, a base, a capacitance system, and at least one cantilever structure. The substrate includes a back cavity, the base is disposed on one side of the substrate, and the capacitance system is disposed on the base. The capacitance system includes at least one back plate assembly, at least one first vibration diaphragm, and at least one second vibration diaphragm. The at least one first vibration diaphragm includes a first sub-vibration diaphragm, and the at least one second vibration diaphragm includes a second sub-vibration diaphragm. The sub-vibration diaphragm and the second sub-vibration diaphragm form a cantilever beam structure on the base, which increase compliance of the at least one first vibration diaphragm and the at least one second vibration diaphragm and reduce tension of the at least one first vibration diaphragm and the at least one second vibration diaphragm, thereby improving sensitivity of the microphones.

The invention provides an MEMS pressure sensor, a preparation method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, sequentially forming a first pressure sensing film layer, a first sacrificial layer and a first sub-electrode layer on the first substrate, and sequentially forming a second pressure sensing film layer, a second sacrificial layer and a second supporting layer on the second substrate; respectively etching the first sub-electrode layer and the second supporting layer to form a plurality of first release holes and a plurality of second release holes; removing part of the first sacrificial layer to form a first cavity, and removing part of the second sacrificial layer to form a second cavity; the first sub-electrode layer and the second supporting layer are bonded, and the first release holes and the second release holes are arranged in a staggered mode; and etching the first substrate to form a back cavity, and removing the second substrate to expose the second pressure sensing film layer. According to the scheme, the first sub-electrode layer and the second supporting layer are bonded to form the MEMS pressure sensor with the double pressure sensing film layers, and the sensitivity and the linearity are improved.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a portion of a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and slits defined in the piezoelectric element about the perimeter of the piezoelectric element, the slits defining a plurality of partial anchors securing the piezoelectric element to the support substrate to improve sensitivity of the piezoelectric microelectromechanical system microphone.

The invention provides a hybrid-driven MEMS device and a preparation method thereof, and the method comprises the steps: forming a first actuating structure in a first substrate, forming a piezoelectric composite film layer on the first actuating structure, applying voltages with opposite electrical properties to a first electrode layer and a second electrode layer, enabling a piezoelectric layer to deform under the effect of an inverse piezoelectric effect, and enabling the piezoelectric composite film layer to form a piezoelectric composite film layer; the movable end of the first actuating structure is driven to move; a second cavity is formed in the second substrate, a third electrode layer is formed in the second cavity, voltage which is the same as or opposite to that of the second electrode layer is applied to the third electrode layer, and the third electrode layer and the second electrode layer serve as electrodes for electrostatic driving. According to the MEMS device, the first actuating structure and the second actuating structure are arranged, so that the deformation deflection of the movable end of the first actuating structure is further increased on the basis of displacement generated by piezoelectric driving, the hybrid-driven MEMS device is formed, the defects of independent driving of piezoelectric driving and electrostatic driving are overcome, and the MEMS device can achieve larger displacement under the same voltage during accurate deflection.

MEMS optical circuit switches (OCS) are provided herein, which include novel structures and methods for (1) Alignment of the optical components (collimator array, micro-electromechanical systems (MEMS) mirror array, etc.) in a three-dimensional (3D) MEMS optical circuit switch OCS at the time of assembly or calibration; (2) Detection of the mechanical rotation angle of each MEMS mirror in a 3D MEMS OCS using strain sensors; (3) Monitoring and compensation of the long-term MEMS mirror rotation angle drift and system alignment drift of a 3D MEMS OCS; and (4) Fabrication and assembly of a 2-directional MEMS mirror with piezoelectric actuators.

An ultrasonic transducer is described. The ultrasonic transducer comprises a membrane and a substrate disposed opposite the membrane such that a cavity is formed therebetween. The substrate comprises an electrode region and pedestals protruding from a surface of the substrate and having a height greater than a height of the electrode region, the pedestals being electrically isolated from the electrode region.

A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

To provide an analysis element and a manufacturing method thereof that can prevent an object to be analyzed from being unable to be analyzed appropriately.SOLUTION: A manufacturing method of this analysis element 100 includes the steps of forming a mask layer 20, forming a membrane layer 30, exposing a substrate 10, forming an introduction hole 13 and forming a protrusion 14 at the inlet end 13a of the introduction hole 13, and removing the protrusion 14 by wet etching the protrusion 14.SELECTED DRAWING: Figure 13

This MEMS device comprises: a lower lid (10); an upper lid (30) that forms a space between the upper lid (30) and the lower lid (10); a first substrate (20A) that is disposed facing the lower lid (10) in the space formed between the upper lid (30) and the lower lid (10), and is made of monocrystalline silicon; a second substrate (20B) that is disposed facing the upper lid (30) in the space formed between the upper lid (30) and the lower lid (10), is made of monocrystalline silicon, and includes a movable part (24B), the monocrystalline silicon of the second substrate (20B) being bonded to the monocrystalline silicon of the first substrate (20A); and a capacitance part that is provided between the upper lid (30) and the second substrate (20B) and / or between the first substrate (20A) and the second substrate (20B), and is configured such that the capacitance changes in accordance with the distance between the movable part (24B) and the upper lid (30) or the first substrate (20A).

Disclosed are a vibration sensor, an electronic device and a vibration detection method. The vibration sensor comprises a circuit board assembly, a housing, a chip assembly, a vibration-pickup assembly and a through-hole. A back cavity is formed inside the circuit board assembly, the housing is mounted over the circuit board assembly, and the chip assembly is provided on a side of the circuit board assembly proximate to the housing and is electrically connected to the circuit board assembly. The vibration-pickup assembly is provided inside the cavity and dividing the cavity into a first cavity and a second cavity. The through-hole of the vibration sensor may be in communication with the back cavity and the second cavity.

An airflow generating package includes a base, a covering structure and a film structure. The film structure is disposed between the base and the covering structure, and includes a flap pair including a first flap and a second flap. The flap pair operates at an ultrasonic rate so that the airflow generating package produces an airflow. A first air opening is formed on the covering structure.

In a piezoelectric device, a piezoelectric driving portion includes layers and is directly or indirectly supported by a base portion. The piezoelectric driving portion includes a piezoelectric layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer is disposed on the upper side of the piezoelectric layer. The lower electrode layer faces at least a portion of the upper electrode layer with the piezoelectric layer interposed therebetween. The piezoelectric driving portion includes a through groove extending through the piezoelectric driving portion in the vertical direction, so that a pair of inner side surfaces are provided. The pair of inner side surfaces each include a first small-width portion in which the width of the through groove decreases in a downward direction from an upper end surface of the piezoelectric layer.

A MEMS AE transducer system is provided that takes advantage of the low power consumption and lightweight characteristics of MEMS AE transducers, while also achieving higher sensing sensitivity. To address the problem of low sensitivity typically associated with MEMS AE transducers, electrical responses of multiple MEMS AE transducers operating at different frequency ranges are combined to increase the bandwidth and sensitivity of the MEMS AE transducer system. As the frequencies are constructive, the combined response on a single channel is the actual summation of two signals with an improved signal to noise ratio. Additionally, each frequency can be decomposed because they are well separated from each other due to the super narrowband response and high Quality factor of MEMS AE transducers.

A torsional micro-electro-mechanical systems (MEMS) mirror module provides for thermally-stable ancillary modes of mirror oscillation (e.g., vertical, horizontal, and rocking) by utilizing MEMS die packaging techniques that implement a cantilevered (i.e., fixed-free) die package in which one end of the die is partially fixedly-attached to a die carrier substrate while the non-attached end of the die is free from the die carrier substrate and unsupported. The cantilevered die package with fixed-free architecture effectively decouples the effects of coefficient of thermal expansion (CTE) mismatch of the MEMS die, die-bond adhesive, and die carrier substrate on temperature-dependent MEMS flexure stress. Ancillary mode oscillation frequencies changes with temperatures are thus limited to a smaller range relative to those experienced with conventional package designs.

The invention relates to a MEMS component, in particular an acoustic transducer or pressure sensor, comprising: a substrate with a cavern and a mainland, an interaction element arranged above the cavern and connected to the mainland, where the interaction element is a bending beam, a boundary layer arranged at a distance from the bending beam via connecting elements, which defines a cavity with the bending beam, and a back plate located within the cavity, which is designed as a back electrode, wherein the back plate is designed to be stiffer with respect to the boundary layer and the bending beam, at least one electrode which forms a readable capacitance with a back electrode of the back plate in order to capacitively detect a deflection of at least one of the bending beam, the connecting elements and the boundary layer, at least one stop element which is designed to be displaced into a mechanical stop, wherein the stop element in the stop has at least one fluid flow resistance, in particular a fluid seal, between the cavity on a substrate-facing side and a volume on a substrate-facing side of the cavity.

A micro-electro-mechanical systems (MEMS) die includes a piston; an electrode facing the piston, wherein a capacitance between the piston and the electrode changes as the distance between the piston and the electrode changes; and a resilient structure (e.g., a gasket or a pleated wall) disposed between the piston and the electrode, wherein the resilient structure supports the piston and resists the movement of the piston with respect to the electrode. A back volume is bounded by the piston and the resilient structure and the resilient structure blocks air from leaving the back volume. The piston may be a rigid body made of a conductive material, such as metal or a doped semiconductor. The MEMS die may also include a second resilient structure, which provides further support to the piston and is disposed within the back volume.