1726results about "Piezoelectric/electrostrictive devices" patented technology

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

To provide an actuator device capable of stably obtaining desired drive characteristics even if, for example, an environment temperature is changed.SOLUTION: A metal board 3 supported by a wiring board includes: a movable part; a first extension part 33; a first connection part 35 for connecting the first extension part 33 to the movable part; and a first connection part 37 connected to the first extension part 33. The first connection part 37 includes: a first fixed area 371 fixed to the wiring board; and a first connection area 372 connected to the first extension part 33 and the first fixed area 371. The first connection area 372 includes a first bent part 372c. The first bent part 372c includes a first outer edge P1 in the movable part side and a second outer edge P2 in a side opposite to the movable part, and each of the first outer edge P1 and the second outer edge P2 is bent to the movable part side when viewed from a Z-axis direction.SELECTED DRAWING: Figure 6

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The present invention features a micrometer-scale torsion balance device comprising a rigid mass and two or more nanoribbons attached to the rigid mass. The rigid mass may be suspended by the two or more nanoribbons. The two or more nanoribbons may be placed under tensile stress. A local acceleration value may be derived from a torsional stiffness of the two or more nanoribbons. In some embodiments, the rigid mass may comprise silicon. In some embodiments, the two or more nanoribbons may comprise silicon nitride. In some embodiments, the rigid mass may have a polygon shape, the polygon shape having four or more sides. A side of the four or more sides may be longer than all others.

The invention provides an MEMS pressure sensor, a preparation method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, sequentially forming a first pressure sensing film layer, a first sacrificial layer and a first sub-electrode layer on the first substrate, and sequentially forming a second pressure sensing film layer, a second sacrificial layer and a second supporting layer on the second substrate; respectively etching the first sub-electrode layer and the second supporting layer to form a plurality of first release holes and a plurality of second release holes; removing part of the first sacrificial layer to form a first cavity, and removing part of the second sacrificial layer to form a second cavity; the first sub-electrode layer and the second supporting layer are bonded, and the first release holes and the second release holes are arranged in a staggered mode; and etching the first substrate to form a back cavity, and removing the second substrate to expose the second pressure sensing film layer. According to the scheme, the first sub-electrode layer and the second supporting layer are bonded to form the MEMS pressure sensor with the double pressure sensing film layers, and the sensitivity and the linearity are improved.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a portion of a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and slits defined in the piezoelectric element about the perimeter of the piezoelectric element, the slits defining a plurality of partial anchors securing the piezoelectric element to the support substrate to improve sensitivity of the piezoelectric microelectromechanical system microphone.

The invention provides a hybrid-driven MEMS device and a preparation method thereof, and the method comprises the steps: forming a first actuating structure in a first substrate, forming a piezoelectric composite film layer on the first actuating structure, applying voltages with opposite electrical properties to a first electrode layer and a second electrode layer, enabling a piezoelectric layer to deform under the effect of an inverse piezoelectric effect, and enabling the piezoelectric composite film layer to form a piezoelectric composite film layer; the movable end of the first actuating structure is driven to move; a second cavity is formed in the second substrate, a third electrode layer is formed in the second cavity, voltage which is the same as or opposite to that of the second electrode layer is applied to the third electrode layer, and the third electrode layer and the second electrode layer serve as electrodes for electrostatic driving. According to the MEMS device, the first actuating structure and the second actuating structure are arranged, so that the deformation deflection of the movable end of the first actuating structure is further increased on the basis of displacement generated by piezoelectric driving, the hybrid-driven MEMS device is formed, the defects of independent driving of piezoelectric driving and electrostatic driving are overcome, and the MEMS device can achieve larger displacement under the same voltage during accurate deflection.

A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.

To provide an analysis element and a manufacturing method thereof that can prevent an object to be analyzed from being unable to be analyzed appropriately.SOLUTION: A manufacturing method of this analysis element 100 includes the steps of forming a mask layer 20, forming a membrane layer 30, exposing a substrate 10, forming an introduction hole 13 and forming a protrusion 14 at the inlet end 13a of the introduction hole 13, and removing the protrusion 14 by wet etching the protrusion 14.SELECTED DRAWING: Figure 13

Disclosed are a vibration sensor, an electronic device and a vibration detection method. The vibration sensor comprises a circuit board assembly, a housing, a chip assembly, a vibration-pickup assembly and a through-hole. A back cavity is formed inside the circuit board assembly, the housing is mounted over the circuit board assembly, and the chip assembly is provided on a side of the circuit board assembly proximate to the housing and is electrically connected to the circuit board assembly. The vibration-pickup assembly is provided inside the cavity and dividing the cavity into a first cavity and a second cavity. The through-hole of the vibration sensor may be in communication with the back cavity and the second cavity.

An airflow generating package includes a base, a covering structure and a film structure. The film structure is disposed between the base and the covering structure, and includes a flap pair including a first flap and a second flap. The flap pair operates at an ultrasonic rate so that the airflow generating package produces an airflow. A first air opening is formed on the covering structure.

A MEMS AE transducer system is provided that takes advantage of the low power consumption and lightweight characteristics of MEMS AE transducers, while also achieving higher sensing sensitivity. To address the problem of low sensitivity typically associated with MEMS AE transducers, electrical responses of multiple MEMS AE transducers operating at different frequency ranges are combined to increase the bandwidth and sensitivity of the MEMS AE transducer system. As the frequencies are constructive, the combined response on a single channel is the actual summation of two signals with an improved signal to noise ratio. Additionally, each frequency can be decomposed because they are well separated from each other due to the super narrowband response and high Quality factor of MEMS AE transducers.

A torsional micro-electro-mechanical systems (MEMS) mirror module provides for thermally-stable ancillary modes of mirror oscillation (e.g., vertical, horizontal, and rocking) by utilizing MEMS die packaging techniques that implement a cantilevered (i.e., fixed-free) die package in which one end of the die is partially fixedly-attached to a die carrier substrate while the non-attached end of the die is free from the die carrier substrate and unsupported. The cantilevered die package with fixed-free architecture effectively decouples the effects of coefficient of thermal expansion (CTE) mismatch of the MEMS die, die-bond adhesive, and die carrier substrate on temperature-dependent MEMS flexure stress. Ancillary mode oscillation frequencies changes with temperatures are thus limited to a smaller range relative to those experienced with conventional package designs.

The invention relates to a MEMS component, in particular an acoustic transducer or pressure sensor, comprising: a substrate with a cavern and a mainland, an interaction element arranged above the cavern and connected to the mainland, where the interaction element is a bending beam, a boundary layer arranged at a distance from the bending beam via connecting elements, which defines a cavity with the bending beam, and a back plate located within the cavity, which is designed as a back electrode, wherein the back plate is designed to be stiffer with respect to the boundary layer and the bending beam, at least one electrode which forms a readable capacitance with a back electrode of the back plate in order to capacitively detect a deflection of at least one of the bending beam, the connecting elements and the boundary layer, at least one stop element which is designed to be displaced into a mechanical stop, wherein the stop element in the stop has at least one fluid flow resistance, in particular a fluid seal, between the cavity on a substrate-facing side and a volume on a substrate-facing side of the cavity.

A piezoelectric sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and extending to an unsupported distal end. An electrode is disposed on or in the proximal portion of the beam and has an outer boundary with a shape substantially corresponding to a contour line of a strain distribution plot for the cantilever beam resulting from a force applied to the cantilever beam.

The invention provides a piezoelectric MEMS device and a preparation method thereof, and relates to the technical field of semiconductors. The piezoelectric MEMS device comprises a first vibration layer, an electrode layer and a second vibration layer, the electrode layer and the second vibration layer are arranged on the first vibration layer, the electrode layer is provided with a first electrode surface and a second electrode surface which are opposite in a preset direction, and an electrode side face connected with the first electrode surface and the second electrode surface. The outer contour of the orthographic projection of the electrode side face on the first vibration layer is located in the outer contour of the surface, facing the electrode layer, of the first vibration layer, the first vibration layer completely covers the first electrode surface, and the second vibration layer completely covers the second electrode surface and the electrode side face. According to the piezoelectric MEMS device, the first vibration layer and the second vibration layer are arranged on the two sides of the electrode layer respectively, all the exposed faces of the electrode layer are wrapped by the first vibration layer and the second vibration layer, and all-dimensional anti-corrosion protection of the electrode layer is achieved. Therefore, the piezoelectric MEMS device can prevent the electrode layer from being corroded, and has relatively long service life.

The invention relates to a microelectromechanical sensor (10) for measuring an environmental variable (12) of a sensor environment (16), comprising at least one deflection element (20) which can be deflected in a vertical direction (18) depending on the environmental variable (12), at least one counter electrode (32), at least one electrode surface (34) which is coupled to the deflection element (20) and which can be moved relative to the counter electrode (32) depending on the deflection of the deflection element (20) by changing an electrode spacing (38) and which faces the counter electrode (32), wherein stiffening means (44) are arranged between the electrode surface (34) and the deflection element (20),which extend in a first direction (48) perpendicular to the vertical direction (18) alternating with at least one free first gap (50) between the deflection element (20) and the electrode surface (34) and in a second direction (52) perpendicular to the vertical direction (18) and the first direction (48) alternating with at least one free second gap (54) between the deflection element (20) and the electrode surface (34) and which connect the electrode surface (34) and the deflection element (20) to one another at a distance in the vertical direction (18).

A microelectromechanical electrostatic actuator is provided that includes a first layer and a second layer, a first set of comb fingers in the first layer aligned with a second set of comb finger in the second layer. In this aspect, the x-direction width of the comb fingers of the first set is tapered along the vertical direction, such that an electrostatic force between comb fingers is increased by tapering to thereby lower a required actuation voltage.

The invention discloses an MEMS sensor based on a half cymbal structure and a preparation method thereof. The preparation method comprises the following steps: providing a substrate; a first structure layer is formed on one side of the substrate and comprises an end cover layer, the end cover layer comprises a first horizontal part, an inclined part and a second horizontal part, the two ends of the inclined part are integrally connected with the first horizontal part and the second horizontal part respectively, the first horizontal part is located on the substrate, and the second horizontal part is parallel to the first horizontal part; a first gap is formed between the substrate and the end cover layer; sequentially forming a lower electrode layer, a piezoelectric layer and an upper electrode layer on one side, far away from the substrate, of the first structure layer; a second gap exists between the lower electrode layer and the end cover layer. Through the method, the preparation process of the micron-sized MEMS sensor is simplified, and the production yield and the production efficiency of the MEMS sensor are improved.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

MEMS device (10) with a movable displacement element (12) and a drive device (14) for driving the movable displacement element (12), wherein the drive device (14) has at least one drive electrode (16), characterized in that the drive electrode (16) is segmented and at least one functional electrode (18) is provided for measuring the deflection of the displacement element (12).

The invention provides an MEMS component and a vibration cavity structure and a liquid ejection head thereof, the MEMS component comprises a piezoelectric actuator structure, and the vibration cavity structure is in contact with the piezoelectric actuator structure; the vibration cavity structure comprises a vibration cavity and a cavity wall, and the inner side wall of the cavity wall is arc-shaped; the vibration cavity structure is made of silicon and / or silicon oxide. The cavity wall of the vibration cavity structure disclosed by the invention adopts the design of the arc-shaped inner side wall, so that the deformation volume of the vibration cavity is increased on the premise that the density of the spray holes of the liquid spray head is not changed, and the size of liquid drops is effectively increased; and meanwhile, the liquid ejection head can realize ejection of liquid drops with the same size by using relatively small driving voltage, so that the energy consumption is reduced.

The present application relates to an abnormal signal detection device using a dual acoustic wave sensor. The abnormal signal detection device using a dual acoustic wave sensor comprises: a housing including a first acoustic wave transmission portion and a second acoustic wave transmission portion; a base substrate located inside the housing and including a first surface and a second surface; a first acoustic wave sensor mounted on the first surface and converting an acoustic wave in a first band into a first electrical signal; a second acoustic wave sensor mounted on the second surface and converting an acoustic wave in a second band into a second electrical signal.

Aspects of transducers with feedback transduction are described. One aspect is a transducer system comprising an operational amplifier having an inverting input, a non-inverting input, and an output. The transducer system also includes a piezoelectric microelectromechanical system (MEMS) transducer having a first node and a second node, wherein the first node is coupled to the inverting input of the operational amplifier, and wherein the piezoelectric MEMS transducer is configured to generate an electrical signal across the first node and the second node in response to a signal incident upon the piezoelectric MEMS transducer. The transducer system also includes an attenuator having an input and an output, wherein the input of the attenuator is coupled to the output of the operational amplifier, and wherein the output of the attenuator is coupled to the second node of the piezoelectric MEMS transducer.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

Disclosed herein are devices comprising stretchable interdigitated electrode arrays and methods for fabricating the devices. The devices are capable of acting as elongation sensors by sensing a change in the capacitance of the device as the distance between the interdigitated fingers changes when the device is elongated or compressed. The device may be coupled to other devices such as to be able to sense elongation or compression of the coupled device. The interdigitated fingers of the device are supported by a substrate and may be fabricated using traditional microfabrication techniques.

The present invention relates to the technical field of microelectromechanical system manufacturing, and particularly relates to a micro-hemispherical gyro structure with a curved surface electrode and a preparation method thereof; the method includes coating the outer surface of a micro-hemispherical resonator, coating the inner and outer surfaces of the micro-hemispherical curved surface electrode and spraying photoresist; aligning a photomask plate with an optical lens structure with the inner surface of the micro-hemispherical curved surface electrode, performing photolithography and development to pattern the photoresist of the curved surface structure; using the photoresist as a mask to pattern the metal film on the micro-hemispherical curved surface electrode to form excitation detection electrodes, shielding electrodes, and anchor electrodes; coaxially aligning the micro-hemispherical resonator with the micro-hemispherical curved surface electrode, curing and conducting the resonator anchor points and the curved surface electrode anchor points, and fixing the reference surface of the outer edge of the curved surface electrode on a buffer plate to form a micro-hemispherical gyro structure with a curved surface electrode; the present invention can effectively reduce the process difficulty and cost of manufacturing the curved surface electrode and has better thermal adaptation performance.

Various embodiments of the utility model relate to a semiconductor device. The semiconductor device comprises a sensing electrode, a first dielectric layer, a second dielectric layer, an actuating diaphragm and a third dielectric layer. The sensing electrode is located above the substrate and between the plurality of isolation trenches. A plurality of portions of the first dielectric layer are on the sensing electrode. A portion of the second dielectric layer is on the sensing electrode and on the portions of the first dielectric layer. The actuating diaphragm is over the second dielectric layer, wherein the actuating diaphragm is spaced apart from the second dielectric layer by a cavity. The third dielectric layer is located on the actuating diaphragm, the third dielectric layer is located between the actuating diaphragm and the cavity, and the thickness of a part of the second dielectric layer is larger than that of the third dielectric layer.

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.