404 results about "Fill factor" patented technology

The invention discloses a method for passivating a perovskite solar cell by using diphenylamine ammonium salt and a derivative thereof, and belongs to the technical field of perovskite solar cells. According to the method, diphenylamine ammonium salt and a derivative thereof are introduced as an interface modification layer of perovskite through a solution spin-coating process, so that in-situ passivation is realized. The diphenylamino ammonium salt and the derivative thereof can effectively reduce surface defects of perovskite, passivate uncoordinated lead ions, supplement iodine vacancies, significantly reduce non-radiative recombination of a perovskite layer and promote charge extraction by virtue of unique properties of the diphenylamino ammonium salt and the derivative thereof, so that the open-circuit voltage and fill factors of the perovskite solar cell are improved. Meanwhile, large-volume ammonium cations can be gathered on a crystal boundary, so that the defect of the crystal boundary is filled, and ion migration is inhibited. In addition, after passivation, moisture can be effectively prevented from invading the three-dimensional perovskite structure, and the humidity stability and the storage stability of a cell device are remarkably improved. The invention aims at improving the photoelectric conversion efficiency of the perovskite solar cell and realizing the long-term stability of the device performance.

The invention discloses a photovoltaic string fault detection method, a control device, a photovoltaic system and a medium, and the method comprises the steps: detecting a photovoltaic string to obtain a detection parameter, and determining a filling factor of the photovoltaic string according to the detection parameter; when the filling factor is larger than or equal to a first threshold value, it is determined that no aging fault or shielding fault occurs in the photovoltaic string, and the first threshold value is determined according to the initial filling factor of the photovoltaic string in the fault-free state; when the filling factor is smaller than a first threshold value, a first resistance value and a second resistance value are determined according to the detection parameters, the fault type of the photovoltaic string is determined according to the first resistance value and the second resistance value, the first resistance value is used for representing the equivalent series resistance value when the current of the photovoltaic string approaches zero, and the second resistance value is used for representing the equivalent series resistance value when the current of the photovoltaic string approaches zero. The second resistance value is used for representing an equivalent parallel resistance value when the voltage of the photovoltaic string approaches zero. According to the embodiment of the invention, the diagnosis period of the photovoltaic string can be shortened, and the diagnosis process of the photovoltaic string is simplified on the whole.

The invention provides a perovskite thin film and a preparation method thereof, and belongs to the technical field of perovskite thin films, and the preparation method comprises the following steps: S1, preparing modified octa (aminophenyl trioxosilane); s2, preparing a precursor solution; and S3, spin-coating the pretreated substrate with the precursor solution, dropwise adding ethyl acetate at the same time, performing illumination treatment under ultraviolet light, and then immediately performing micro-vibration and curing annealing on the substrate to obtain the perovskite thin film. According to the perovskite thin film obtained by the invention, the purposes of synchronously increasing the open-circuit voltage and the filling factor of a solar cell, improving the photoelectric conversion efficiency and enhancing the long-term stability can be achieved.

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention relates to a photovoltaic cell preparation method, a photovoltaic cell, a laminated cell and a photovoltaic cell module. Providing an initial battery piece; depositing and forming a protective layer on the surface; carrying out laser treatment twice; printing and sintering to form an electrode; and carrying out at least two times of laser-assisted sintering on the electrode. According to the photovoltaic cell preparation method, the protection layer at the first area is removed, the doping concentration at the first area is improved, and at least two times of laser-assisted sintering are combined, so that on one hand, the metal contact area is optimized, the usage amount of silver paste is reduced, the material cost is reduced, and meanwhile, paste contact sintering is enhanced; damage caused by laser grooving doping is removed; and on the other hand, the doping concentration is optimized, the contact resistance is remarkably reduced, the open-circuit voltage and the filling factor are favorably improved, the shading loss is reduced, and the current collection efficiency is ensured, so that the photoelectric conversion efficiency and the reliability of the cell are remarkably improved, the production process is simplified, and the production cost is reduced.

The invention discloses a heterojunction solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of heterojunction solar cells. The heterojunction solar cell comprises a substrate; a front passivation layer and a front anti-reflection layer are sequentially arranged on the front surface of the substrate from inside to outside; the back surface of the substrate is provided with an N-type contact region and a P-type contact region; the N-type contact area is provided with a first passivation layer, a first conductive layer, a first mask layer, a seed layer, a copper gate electrode, insulation paste and a solder strip from inside to outside in sequence. The P-type contact area is provided with a second passivation layer, a second conductive layer, a third conductive layer, a seed layer, a copper gate electrode and a solder strip from inside to outside in sequence. Solder paste is arranged on the side wall of the copper gate electrode. The copper electroplating technology can accurately control the height and width, and is of a main-grid-free structure, so that the material cost is reduced, and the double-sided rate of the solar cell is improved; the conductivity of copper is superior to that of silver paste, so that the short-circuit current, the filling factor and the efficiency of the solar cell structure can be improved.

The invention provides a battery piece, a battery string, a preparation method of the battery string and a photovoltaic module. A first grid line layer of the battery piece comprises a plurality of first interconnection main grids which are arranged at intervals, a second main grid layer is arranged on the back face of the battery piece, the second main grid layer is provided with a plurality of second interconnection main grids and a plurality of current collection enhancing main grids, and the first interconnection main grids and the second interconnection main grids are arranged in a one-to-one correspondence mode in the thickness direction of the battery piece. The two sides of each first interconnection main grid are respectively provided with at least one current collection enhancement main grid. According to the battery piece provided by the invention, the current collection capability of the battery piece is improved, the current transmission loss is reduced, the filling factor of a photovoltaic module is improved, meanwhile, the optical loss caused by optical shielding on the front surface of the battery piece is reduced, the short-circuit current is improved, and the short-circuit current and the filling factor are optimized at the same time.

The invention provides a solar laminated cell and a preparation method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology, the solar laminated cell comprises a bottom cell and a top cell which are laminated along a first direction, and a composite layer is arranged between the bottom cell and the top cell. The top cell comprises a first transmission layer, a perovskite layer, a second transmission layer, a transparent conducting layer and a first electrode which are arranged in the first direction, the surface, facing the transparent conducting layer, of the perovskite layer is provided with a first suede structure, the first suede structure comprises a plurality of protruding parts, the height of the protruding parts in the first direction is D1, and the height of the second transmission layer is D1; the thickness of the perovskite layer along the first direction is D2, D1 and D2 meet the condition that D1 / D2 is greater than or equal to 0.1 and less than or equal to 0.3, the first suede structure is arranged on the perovskite layer, so that the solar laminated cell can absorb larger incident light, meanwhile, the contact area of the perovskite layer and the second transmission layer is increased, and the short-circuit current and the filling factor of the solar laminated cell are improved.

The invention relates to a thin film solar cell module interconnection structure and a preparation method thereof. The preparation method comprises the following steps: 1) selecting a substrate to deposit a first electrode layer; (2) forming a P1 scribing line; 3) depositing a device functional layer; 4) forming a P2 scribing line; 5) depositing a second electrode layer; and (6) forming a P3 lineation line. On one hand, on the premise that the width of a dead zone is reduced, photon-generated carriers of a device function layer corresponding to P3 lineation have a certain probability under the drifting effect and can be collected, the photoelectric conversion performance of the assembly is further improved, the device function layer can form absorption, conductive channels between adjacent sub-cells are prevented from being broken, and the photoelectric conversion efficiency of the assembly is improved. Series resistance is reduced; on the other hand, on the basis of the formed paddle-tumbler, and the paddle-tumbler and the groove are communicated or separated by the second electrode layer, not only can the scratch edge be prevented from tilting to cause craters, but also the damage of the device layer can be controlled, and lattice defects near a dead zone can be eliminated, so that the open-circuit voltage and the fill factor can be improved.

A P-type TBC solar cell and a manufacturing method therefor. The P-type TBC solar cell comprises P-type substrate silicon, wherein the backside of the P-type substrate silicon comprises a patterned N-type region; in the N-type region, a first tunneling layer, an N-type polysilicon layer, a first conductive shielding layer, a first passivation anti-reflection layer and a non-silver N fine finger are sequentially disposed outwards from the backside of the P-type substrate silicon; and the non-silver N fine finger penetrates the first passivation anti-reflection layer to come into contact with the first conductive shielding layer. In the present invention, a non-silver N fine finger is used as a metal electrode in an N-type region of the back face of a cell, such that the production costs of a P-type TBC solar cell can be greatly reduced; moreover, by means of providing a conductive shielding layer between the non-silver N fine finger and a corresponding polysilicon, metal slurry is prevented from coming into direct contact with the polysilicon during sintering of the non-silver N fine finger, such that the contact resistance is greatly reduced, fill factors of the cell are increased, an open-circuit voltage of the cell is increased and the photoelectric conversion efficiency of the cell is improved.

The invention provides high-wettability glass powder, a preparation method of the high-wettability glass powder and BC battery conductive silver paste, and belongs to the technical field of photovoltaic battery paste. The glass powder comprises the following components in parts by mass: 50-60 parts of a first component, wherein the first component is PbO and Bi2O3; 30 to 40 parts by mass of a second component, wherein the second component is TeO2 and SiO2; the third component is prepared from the following components in parts by mass: Li2CO3, Na2CO3 and K2CO3; and 0.1 to 5 parts by mass of a fourth component, wherein the fourth component is at least one of MoO3, In2O3, SeO2, WO3, Al2O3 and ZnO. The glass powder disclosed by the invention has good wettability, and the problems of high interface resistance and low filling factor caused by non-uniform thickness of a glass layer in the prior art are solved.

The invention relates to a hole transport layer material for an inverted perovskite solar cell, the inverted perovskite solar cell and application, the hole transport layer material is a self-assembled monomolecular layer hole transport material, and the self-assembled monomolecular layer hole transport material comprises an organic compound with the following general formula: # imgabs0 #, r1 and R2 represent independently substituted C6-C15 aryl groups, and the substituent group is a methoxy group or a methylthio group; according to the inverted perovskite cell, holes of the hole transport layer can be reduced, the film forming quality can be improved, and the defects of the lower interface of the perovskite photosensitive layer can be passivated, so that the open-circuit voltage (Voc) and the fill factor (FF) of the inverted perovskite cell are effectively improved, and the photoelectric conversion efficiency of the perovskite cell is effectively improved; and the photoelectric conversion efficiency of the perovskite solar cell is optimal.

The present application relates to a cell string fabrication method, a cell string, and a photovoltaic module. The cell string fabrication method comprises the following steps: providing a semiconductor substrate; performing metallization on the semiconductor substrate, so as to obtain cells; connecting the cells to a connecting member, so as to obtain a cell string precursor; and performing an illumination treatment on the cell string precursor and simultaneously applying a reverse bias voltage to the cell string precursor. By adding a target photoelectric treatment step, electric current conduction paths can be increased, and the contact between a metal and a semiconductor substrate can be improved, thereby reducing the series resistance of cells, increasing a fill factor of the cells, and improving the photoelectric conversion efficiency.

The invention discloses an indolocarbazole compound, a perovskite solar cell and a preparation method, and belongs to the technical field of perovskite solar cells, the indolocarbazole compound provided by the invention is an organic small molecule material and has an asymmetric molecular structure, and an asymmetric conjugated structure system of the indolocarbazole compound enhances the molecular dipole moment and improves the photoelectric conversion efficiency. And the energy level matching is optimized. Meanwhile, benzene ring groups on side chains of molecules of the organic hole transport layer can further inhibit excessive aggregation of the molecules, uniform coverage is achieved, and efficient transport of carriers is achieved. Therefore, when the indolocarbazole compound organic small molecule material is used as a hole transport layer material for a perovskite solar cell, the energy levels of the highest occupied molecular orbital HOMO and the lowest unoccupied molecular orbital LUMO of the indolocarbazole compound organic small molecule material provided by the invention can be well matched with the energy level of an active layer material; therefore, the collection efficiency of current carriers is greatly improved, and the filling factor and the photoelectric conversion efficiency are improved.

The invention relates to a crystalline silicon textured structure, a battery, a preparation method of the crystalline silicon textured structure and a photovoltaic module. The crystalline silicon textured structure comprises a silicon substrate and a pyramid-like structure arranged on the silicon substrate, the pyramid-like structure comprises a first part and a second part, the first part is located on the side, away from the silicon substrate, of the second part, the first part is provided with a first side face, the first side face is of a concave structure, and the first part is of a spine structure. In the crystalline silicon textured structure, the first part is provided with the first side surface with the concave structure, and the first part is of the spine structure, so that a contact point position for easily transmitting current can be provided, the filling factor of the battery is improved, and the photoelectric conversion efficiency of the battery is further improved.

The invention discloses a hole transport layer, a preparation method thereof and a solar cell. The hole transport layer comprises an SAM (single self-assembled monomolecular layer) material and a buried material, and the buried material comprises F-type phosphate group-containing molecules. According to the invention, the technical problems of poor coverage of a hole transport material SAM on a transparent conductive oxide (TCO) substrate and weak transmission capability in a perovskite cell or a laminated cell in the prior art can be solved. The hole transport layer is more uniform, the interface transmission loss is smaller, and the filling factor and the conversion efficiency are remarkably improved when the hole transport layer is used for the solar cell.

The invention discloses high-conductivity thermocuring HJT solar cell silver paste. The high-conductivity thermocuring HJT solar cell silver paste comprises, by mass, 70%-80% of submicron spherical silver powder, 5%-10% of nanoscale fibrous silver powder, 3%-6% of nanoscale flaky silver powder, 3%-6% of nanoscale spherical silver powder and 4%-9% of organic carriers. Through a novel processing mode, the nano-scale fibrous silver powder is prepared, the efficiency of a conductive network is improved, meanwhile, thermal stress generated by slurry in thermocuring is dispersed, and the stability of a conductive layer is enhanced. Meanwhile, the same conductive polymer is used as an organic carrier, better physical and chemical compatibility with the modified silver powder is achieved, the contact resistance of the silver layer is reduced, chemical bonding with the TCO layer on the surface of the silicon wafer is formed, the contact barrier between an electrode and a semiconductor is reduced, the short-circuit current and the filling factor of the cell are improved, and the cell efficiency is improved.

The invention provides a TBC cell P region structure, a TBC cell and a preparation method thereof, and a photovoltaic module, and relates to the technical field of solar cells, the TBC cell P region structure comprises a first tunneling oxide layer, a first boron-doped polycrystalline silicon layer, a second tunneling oxide layer and a second boron-doped polycrystalline silicon layer which are sequentially laminated on the back surface of a silicon substrate; wherein the doping concentration of the second boron-doped polycrystalline silicon layer is higher than that of the first boron-doped polycrystalline silicon layer. In the invention, the bottom layer is doped with i-poly at a relatively low concentration, so that boron accumulation on the interface is inhibited, the BRL (boron-rich layer) concentration is reduced, and a low Auger composite interface is obtained; and then a thin tunneling layer is deposited again, and a second polycrystalline silicon layer is doped with a high concentration, so that auger recombination is reduced, passivation and contact performance is improved, opening voltage is improved, filling factors are improved, and the conversion efficiency of the cell is improved finally.

A fabrication method for a back-contact battery with a continuous back film deposition, comprising: forming in sequence a second semiconductor layer and a sacrificial isolation layer on the back surface of a silicon wafer obtained in S01, the second semiconductor layer comprising an intrinsic hydrogenated amorphous silicon layer and a second doped silicon layer; wherein the second semiconductor layer and the sacrificial isolation layer are deposited and formed in a deposition system using a plate-type CVD continuous deposition method; the deposition temperature of the second doped silicon layer and the deposition temperature of the isolation sacrificial layer being independently controlled at 150-200℃, and the sum of the deposition duration of the second doped silicon layer and the deposition duration of the sacrificial isolation layer being controlled at 1-4 minutes; and performing single-side cleaning to remove the sacrificial isolation layer and a wrap-around deposition layer on the back surface obtained in S7. Enabling the common utilization of a single deposition system greatly reduces equipment costs and simplifies processes. This effectively prevents contamination during continuous deposition, while maintaining optimal battery performance, and particularly superior passivation performance, fill factor, and battery conversion efficiency.

Method for producing a plurality of optoelectronic components comprising the steps: Producing a plurality of volume-emitting µLEDs, each having a first emission surface, on a wafer, which are arranged at a first distance from one another on the wafer, wherein the µLEDs comprise a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and second layers, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer; Transferring a subset of the µLEDs from the wafer to a temporary carrier such that at least two µLEDs of the subset of µLEDs are arranged on the temporary carrier at a second distance from one another that is greater than the first distance; Creating a structured dielectric material layer on the temporary carrier, which surrounds at least side surfaces of the subset of µLEDs in a contacting manner, and which has a second emission surface for light emitted by the first emission surface, wherein the second emission surface is larger than the first emission surface, in particular by at least a factor of 1.1; and Creating a second contact structure on the structured dielectric material layer, wherein the second contact structure contacts the electrically conductive second contact layer of the µLEDs.

Compared with a common light injection technology, an LED lamp set is used for generating ultraviolet light with the fixed wavelength of 365 nm-UVA and the irradiation intensity of 200 W / m < 2 >, and through the ultraviolet photon instantaneous injection repairing technology, the attenuation of the metastable-state outdoor photovoltaic module can be restored, and the attenuation of the metastable-state outdoor photovoltaic module can be restored. The photoelectric conversion efficiency, the open-circuit voltage and the fill factor of the photovoltaic module are improved to a certain extent after the photovoltaic module is subjected to ultraviolet treatment for about 10 seconds; dynamic surface cleaning is implemented through a brush, and meanwhile dirt removal and heat management are completed through cooperation of a fan; the attenuation repairing equipment is high in environmental adaptability and is also suitable for the environment with serious wind and sand, surface cleanliness improvement and operation temperature control of the photovoltaic module are synchronously achieved, and safety and reliability of repairing operation are ensured.

The invention relates to a solar cell and a manufacturing method thereof, a laminated cell and a photovoltaic module, and relates to the technical field of solar cells. According to the solar cell, the substrate doped with the antimony element is adopted, so that the multi-carrier concentration is improved, the carrier transmission efficiency of the cell is optimized, and the filling factor of the cell is improved; meanwhile, the concentration of the antimony element in the first semiconductor layer is controlled to be larger than that of the antimony element in the second semiconductor layer, the electrical properties of the first semiconductor layer and the second semiconductor layer are optimized, the carrier recombination rate of the cell can be optimized, the passivation effect of the second semiconductor layer is improved, and the performance of the cell is improved. And the overall passivation effect of the solar cell is further improved.

The present invention relates to the technical field of solar cell preparation, and specifically provides a heterojunction cell preparation method and a heterojunction cell. The heterojunction cell preparation method comprises: providing a semiconductor substrate layer, at least one side of the semiconductor substrate layer being provided with a damage layer; performing first texturing treatment on the semiconductor substrate layer to remove some damage from the damage layer, such that the surface of the side of the semiconductor substrate layer having the damage layer forms an inverted pyramid textured surface, the inverted pyramid textured surface comprising a plurality of first microstructural units; and, after the first texturing treatment, performing second texturing treatment on the side of the semiconductor substrate layer where the inverted pyramid textured surface is formed, so as to form a plurality of second pyramids on the surfaces of the first microstructural units of the inverted pyramid textured surface, and remove remaining damage from the damage layer. The heterojunction cell preparation method of the present invention enables prepared cells to have high fill factors at low costs.

The invention relates to a photovoltaic cell, a preparation method thereof and a photovoltaic module. The preparation method of the photovoltaic cell comprises the following steps that a substrate structure is provided, and the substrate structure comprises a transparent conductive layer located on the surface; applying a mixed solution to the transparent conductive layer to form a liquid film, wherein the mixed solution comprises a nickel source, a doped metal source and an organic reducing agent; and carrying out annealing treatment on the liquid film at the temperature of 250-450 DEG C, and forming a hole transport layer on the surface of the transparent conductive layer. According to the preparation method of the photovoltaic cell, the energy level matching and contact effect between the hole transport layer and the transparent conductive layer can be improved, the open-circuit voltage and the filling factor are improved, and then the photovoltaic cell can have high conversion efficiency.

The invention provides a laser-assisted sintering device for a solar cell. The laser-assisted sintering device comprises a sintering furnace, the laser assembly is located at the downstream of the sintering furnace and used for emitting laser for radiating the battery piece, and the sintering furnace and the laser assembly are arranged in a spaced mode in the first direction; and the transmission assembly is used for transmitting the pre-sintered battery piece in the sintering furnace and enabling the battery piece to pass through the laser radiation area. The invention further provides a laser-assisted sintering method of the solar battery piece. The laser-assisted sintering process is added after the traditional sintering process, and the surface of the cell is scanned by laser, so that the grid lines on the front and back surfaces of the cell can form good ohmic contact, the tunneling oxide layer and the doped polycrystalline silicon layer are ensured to have good passivation capability, the open-circuit voltage and fill factor of the cell are improved, and the performance of the cell is improved. And the photoelectric conversion efficiency of the cell is improved.

An image sensor includes a sensor substrate including a plurality of pixels sensing incident light, a nano-optical micro-lens array including a plurality of nano-optical micro-lenses respectively corresponding to the plurality of pixels, and a color filter array disposed between the sensor substrate and the nano-optical micro-lens array and including a plurality of color filters. Each of the plurality of nano-optical micro-lenses includes a plurality of nanostructures to condense the incident light onto a corresponding pixel, and when viewed in a cross-section of the nano-optical micro-lens array, a fill factor denotes a ratio of an area of the nanostructures arranged within a reference circle among the plurality of nanostructures included in one of the plurality of nano-optical micro-lenses, and the reference has a pixel size corresponding to the one nano-optical micro-lens as a diameter, the fill factor is greater than or equal to 95%.

The invention relates to the technical field of solar cells, in particular to a crystalline silicon solar cell with a tunneling oxide layer structure and a preparation method thereof, and the crystalline silicon solar cell comprises a suede structure, a boron diffusion layer, an aluminum oxide layer and an anti-reflection film which are sequentially stacked on the front side; the tunneling oxide layer, the phosphorus-doped polycrystalline silicon layer and the anti-reflection film are sequentially stacked on the back surface; a complete tunneling oxide layer and a complete phosphorus-doped polycrystalline silicon layer are reserved in a back metallization region, and a non-metallization region is etched to form a tower footing structure; according to the invention, by optimizing the structural design of the back tunneling oxide layer and the phosphorus-doped polycrystalline silicon layer and combining laser and wet processing processes, the contradiction between the thickness of the polycrystalline silicon layer and parasitic absorption and the balance problem between the area of a graphical region and a fill factor in the prior art are effectively solved, so that the conversion efficiency of the cell is remarkably improved.

The invention relates to a photovoltaic cell piece and a preparation method, the preparation method comprises the steps that a laminated structure is formed on a silicon substrate, the laminated structure comprises a first tunneling layer, a second tunneling layer, a first doping layer, a third tunneling layer and a second doping layer which are arranged in a laminated mode, the first tunneling layer is adjacent to the silicon substrate, and the second tunneling layer is adjacent to the third tunneling layer; a mask layer is formed on the side, away from the third tunneling layer, of the second doping layer, the part, located in the non-metallization area, of the mask layer is removed through laser to form a patterned mask layer, and at least part, located in the non-metallization area, of the laminated structure is removed through laser to form a patterned laminated structure, and removing the patterned mask layer by using an acid solution, and depositing a passivation layer on the patterned laminated structure to form a metal electrode in ohmic contact with a doping layer included in the patterned laminated structure. The photovoltaic cell prepared according to the preparation method provided by the invention can have relatively high photoelectric conversion efficiency and fill factor.

The invention discloses an all-polymer solar cell and a preparation method thereof, the all-polymer solar cell comprises a transparent substrate, an anode interface modification layer, an all-polymer active layer, a cathode interface modification layer and a top electrode, the anode interface modification layer is connected to the transparent substrate, the all-polymer active layer is connected to the anode interface modification layer, and the cathode interface modification layer is connected to the top electrode. The cathode interface modification layer is connected to the all-polymer active layer, and the top electrode is arranged on the all-polymer active layer; the transparent substrate connected with the anode interface modification layer is heated to 40-120 DEG C, and then the all-polymer active layer is prepared; and / or when the all-polymer active layer is prepared on the anode interface modification layer, the temperature of the active layer solution used for coating is 40-100 DEG C. The open-circuit voltage, the short-circuit current density and the fill factor of the all-polymer solar cell obtained by the preparation method of the all-polymer solar cell disclosed by the invention are improved to different extents, so that the photoelectric conversion efficiency is improved.

The utility model relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure and a double-sided selective TOPCon cell. The selective passivation contact structure comprises a silicon wafer, the back surface of the silicon wafer is sequentially provided with a first tunneling oxide layer and first boron-doped polycrystalline silicon, and a back surface electrode contact region of the first boron-doped polycrystalline silicon is also provided with second boron-doped polycrystalline silicon; the thickness of the first boron-doped polycrystalline silicon is smaller than that of the second boron-doped polycrystalline silicon, the crystallization rate of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon, and the doping concentration of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon. The selective passivation contact structure can reduce parasitic absorption of light, reduce recombination and improve the passivation effect and the transverse transmission performance of carriers, so that the open-circuit voltage, the short-circuit current, the fill factor and the cell efficiency of the double-sided selective TOPCon cell can be further improved.