244 results about "Fill factor" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention discloses a heterojunction solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of heterojunction solar cells. The heterojunction solar cell comprises a substrate; a front passivation layer and a front anti-reflection layer are sequentially arranged on the front surface of the substrate from inside to outside; the back surface of the substrate is provided with an N-type contact region and a P-type contact region; the N-type contact area is provided with a first passivation layer, a first conductive layer, a first mask layer, a seed layer, a copper gate electrode, insulation paste and a solder strip from inside to outside in sequence. The P-type contact area is provided with a second passivation layer, a second conductive layer, a third conductive layer, a seed layer, a copper gate electrode and a solder strip from inside to outside in sequence. Solder paste is arranged on the side wall of the copper gate electrode. The copper electroplating technology can accurately control the height and width, and is of a main-grid-free structure, so that the material cost is reduced, and the double-sided rate of the solar cell is improved; the conductivity of copper is superior to that of silver paste, so that the short-circuit current, the filling factor and the efficiency of the solar cell structure can be improved.

The invention provides a battery piece, a battery string, a preparation method of the battery string and a photovoltaic module. A first grid line layer of the battery piece comprises a plurality of first interconnection main grids which are arranged at intervals, a second main grid layer is arranged on the back face of the battery piece, the second main grid layer is provided with a plurality of second interconnection main grids and a plurality of current collection enhancing main grids, and the first interconnection main grids and the second interconnection main grids are arranged in a one-to-one correspondence mode in the thickness direction of the battery piece. The two sides of each first interconnection main grid are respectively provided with at least one current collection enhancement main grid. According to the battery piece provided by the invention, the current collection capability of the battery piece is improved, the current transmission loss is reduced, the filling factor of a photovoltaic module is improved, meanwhile, the optical loss caused by optical shielding on the front surface of the battery piece is reduced, the short-circuit current is improved, and the short-circuit current and the filling factor are optimized at the same time.

The invention provides high-wettability glass powder, a preparation method of the high-wettability glass powder and BC battery conductive silver paste, and belongs to the technical field of photovoltaic battery paste. The glass powder comprises the following components in parts by mass: 50-60 parts of a first component, wherein the first component is PbO and Bi2O3; 30 to 40 parts by mass of a second component, wherein the second component is TeO2 and SiO2; the third component is prepared from the following components in parts by mass: Li2CO3, Na2CO3 and K2CO3; and 0.1 to 5 parts by mass of a fourth component, wherein the fourth component is at least one of MoO3, In2O3, SeO2, WO3, Al2O3 and ZnO. The glass powder disclosed by the invention has good wettability, and the problems of high interface resistance and low filling factor caused by non-uniform thickness of a glass layer in the prior art are solved.

The invention discloses an indolocarbazole compound, a perovskite solar cell and a preparation method, and belongs to the technical field of perovskite solar cells, the indolocarbazole compound provided by the invention is an organic small molecule material and has an asymmetric molecular structure, and an asymmetric conjugated structure system of the indolocarbazole compound enhances the molecular dipole moment and improves the photoelectric conversion efficiency. And the energy level matching is optimized. Meanwhile, benzene ring groups on side chains of molecules of the organic hole transport layer can further inhibit excessive aggregation of the molecules, uniform coverage is achieved, and efficient transport of carriers is achieved. Therefore, when the indolocarbazole compound organic small molecule material is used as a hole transport layer material for a perovskite solar cell, the energy levels of the highest occupied molecular orbital HOMO and the lowest unoccupied molecular orbital LUMO of the indolocarbazole compound organic small molecule material provided by the invention can be well matched with the energy level of an active layer material; therefore, the collection efficiency of current carriers is greatly improved, and the filling factor and the photoelectric conversion efficiency are improved.

The invention discloses a hole transport layer, a preparation method thereof and a solar cell. The hole transport layer comprises an SAM (single self-assembled monomolecular layer) material and a buried material, and the buried material comprises F-type phosphate group-containing molecules. According to the invention, the technical problems of poor coverage of a hole transport material SAM on a transparent conductive oxide (TCO) substrate and weak transmission capability in a perovskite cell or a laminated cell in the prior art can be solved. The hole transport layer is more uniform, the interface transmission loss is smaller, and the filling factor and the conversion efficiency are remarkably improved when the hole transport layer is used for the solar cell.

The invention provides a TBC cell P region structure, a TBC cell and a preparation method thereof, and a photovoltaic module, and relates to the technical field of solar cells, the TBC cell P region structure comprises a first tunneling oxide layer, a first boron-doped polycrystalline silicon layer, a second tunneling oxide layer and a second boron-doped polycrystalline silicon layer which are sequentially laminated on the back surface of a silicon substrate; wherein the doping concentration of the second boron-doped polycrystalline silicon layer is higher than that of the first boron-doped polycrystalline silicon layer. In the invention, the bottom layer is doped with i-poly at a relatively low concentration, so that boron accumulation on the interface is inhibited, the BRL (boron-rich layer) concentration is reduced, and a low Auger composite interface is obtained; and then a thin tunneling layer is deposited again, and a second polycrystalline silicon layer is doped with a high concentration, so that auger recombination is reduced, passivation and contact performance is improved, opening voltage is improved, filling factors are improved, and the conversion efficiency of the cell is improved finally.

The present invention relates to the technical field of solar cell preparation, and specifically provides a heterojunction cell preparation method and a heterojunction cell. The heterojunction cell preparation method comprises: providing a semiconductor substrate layer, at least one side of the semiconductor substrate layer being provided with a damage layer; performing first texturing treatment on the semiconductor substrate layer to remove some damage from the damage layer, such that the surface of the side of the semiconductor substrate layer having the damage layer forms an inverted pyramid textured surface, the inverted pyramid textured surface comprising a plurality of first microstructural units; and, after the first texturing treatment, performing second texturing treatment on the side of the semiconductor substrate layer where the inverted pyramid textured surface is formed, so as to form a plurality of second pyramids on the surfaces of the first microstructural units of the inverted pyramid textured surface, and remove remaining damage from the damage layer. The heterojunction cell preparation method of the present invention enables prepared cells to have high fill factors at low costs.

The utility model relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure and a double-sided selective TOPCon cell. The selective passivation contact structure comprises a silicon wafer, the back surface of the silicon wafer is sequentially provided with a first tunneling oxide layer and first boron-doped polycrystalline silicon, and a back surface electrode contact region of the first boron-doped polycrystalline silicon is also provided with second boron-doped polycrystalline silicon; the thickness of the first boron-doped polycrystalline silicon is smaller than that of the second boron-doped polycrystalline silicon, the crystallization rate of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon, and the doping concentration of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon. The selective passivation contact structure can reduce parasitic absorption of light, reduce recombination and improve the passivation effect and the transverse transmission performance of carriers, so that the open-circuit voltage, the short-circuit current, the fill factor and the cell efficiency of the double-sided selective TOPCon cell can be further improved.

The invention discloses a passivation contact cell with a selective Poly structure, a preparation method of the passivation contact cell and a photovoltaic module. The passivation contact cell comprises an N-type silicon wafer substrate, a metal contact area and a non-metal contact area, wherein the metal contact area is sequentially provided with a phosphorus diffusion layer, a tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a back surface passivation anti-reflection film from inside to outside; the non-metal contact region comprises a third region with phosphorus diffusion and a fourth region with a recess on the silicon substrate, the third region is sequentially provided with a phosphorus diffusion layer and a back surface passivation anti-reflection film from inside to outside, and the fourth region is provided with a back surface passivation anti-reflection film on the surface of the recess structure. According to the passivation contact battery, the transverse transmission of back current can be improved, the filling factor of the battery is improved, and the Voc of the battery can be prevented from being greatly reduced. And the optical performance of the cell can be remarkably improved, and the long-wave quantum efficiency is improved, so that the current and double-sided rate of the cell are improved.

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

The embodiment of the present application provides a kind of N-type IBC battery negative electrode grid silver paste, N-type IIBC battery and preparation method thereof, wherein, the N-type IBC battery negative electrode grid silver paste provided in the embodiment of the present application includes organic auxiliary agent, silver powder, organic binder and doped glass powder, and the doping element of the doped glass powder is antimony, tellurium and tungsten.By doping antimony, tellurium and tungsten elements in glass powder, antimony element is the same as phosphorus, and the doping of N area can be increased;And tellurium and tungsten have the effect of dissolving silver, which can reduce the contact resistivity of silver grid line, improve the fill factor, thereby improving the photoelectric conversion efficiency of battery;Thus, the problem that the existing N-type IBC battery cannot form n+ region, so that the photoelectric conversion efficiency of N-type IBC battery is not good.

The invention belongs to the technical field of solar cells, and particularly relates to a preparation method and application of a copper-doped cadmium telluride thin-film solar cell. The preparation method of the copper-doped cadmium telluride thin-film solar cell comprises the following steps: preparing a transparent conductive layer, a window layer, an absorption layer and a back contact layer on a transparent substrate in sequence, then soaking the transparent substrate in a copper salt solution, then preparing a back electrode layer on the side of the back contact layer, and carrying out annealing treatment. According to the invention, copper doping is realized based on a soaking method, and hole transport efficiency can be improved, energy band matching can be optimized and interface recombination loss can be reduced by controlling the concentration, the type and the soaking time of the copper salt solution, so that the solar cell has good open-circuit voltage, short-circuit current and filling factors, relatively high conversion efficiency can be realized, and the conversion efficiency can reach 19.62%. Meanwhile, the preparation process is simple and can be completed in the atmospheric environment, and compared with a traditional process, the annealing temperature is low, so that the preparation cost is low.

The invention discloses a TBC crystalline silicon cell doped on the back step by step and region and a preparation method of the TBC crystalline silicon cell. The preparation method comprises the steps that an N-type monocrystalline silicon substrate is provided, the substrate comprises a front face and a back face, annealing treatment is carried out on the back face in a partitioned and step-by-step mode, and doping activation of independent areas is carried out; preparing a textured structure with pyramid morphology on the front surface of the N-type monocrystalline silicon substrate to enhance the light trapping effect; and performing a metal slurry screen printing process on the first region and the second region, performing high-temperature sintering, forming a metal electrode in contact with the first doping layer in the first region, forming a metal electrode in contact with the second doping layer in the second region, and preparing the TBC crystalline silicon battery. According to the invention, the technical problems of incompatibility of boron and phosphorus doped region doping processes, increase of the complexity of a process route, influence on the cell performance and the like in the prior art can be solved, the open-circuit voltage and the fill factor of the cell can be effectively improved, and the photoelectric conversion efficiency of the TBC crystalline silicon cell is improved.

This invention provides a solar cell, its fabrication process, a tandem solar cell, and a photovoltaic module. The fabrication process of the solar cell includes: providing a cell substrate; printing a conductive material onto the cell substrate; and curing the conductive material to form initial grid lines. The conductive material includes bismuth-based lead-free glass; the conductive material also includes copper powder and nickel powder; the mass ratio of copper powder to nickel powder is 80~99.5:0.5~20, and the copper powder includes flake-shaped copper powder and spherical copper powder. In the fabrication process of this invention, the conductive material, through a ternary synergistic system of "copper-nickel-glass" and a dual-morphology copper powder composite design, achieves multiple effects such as suppressing copper diffusion and oxidation and improving adhesion under an air-sintering atmosphere, thereby improving the fill factor and photoelectric conversion efficiency of the solar cell.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

The present application belongs to the technical field of household photovoltaic, and particularly relates to a household photovoltaic fault diagnosis method and system, which comprises: collecting the volt-ampere characteristic curve data of a photovoltaic system and synchronous environmental irradiance; extracting at least one volt-ampere characteristic curve parameter, including short-circuit current, open-circuit voltage, maximum power or fill factor; according to the current irradiance, based on a preset dynamic health baseline, judging whether the system has a fault through a first preset rule. The first preset rule realizes fault diagnosis by obtaining a parameter expected health value and comparing it with an actual extracted value. The present application adopts a dynamic health baseline to adapt to environmental changes, combines an efficient parameter extraction algorithm with an intelligent fault judgment mechanism, significantly improves the diagnosis accuracy, reduces false positives and false negatives, and is suitable for low-cost, automated operation and maintenance of household photovoltaic systems.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.

A thin film photovoltaic structure has a substrate, a first conductive layer, a photovoltaic layer, a second conductive layer, multiple serial connection conductive layers and multiple first insulating areas. By using the serial connection conductive layer, each width between each adjacent serially connected photovoltaic structures is reduced, and an effective area of the thin film photovoltaic structure for collecting optic energy is increased, thus enhancing a geometry fill factor of the thin film photovoltaic structure. Further, by using the serial connection conductive layer and the first insulating area to form contact overlap areas in an overlapping arrangement, it can effectively protect conductive areas in the first conductive layer when etching the second conductive layer during the manufacturing process, which prevents the conductive areas from being damaged to not act as electrodes, and efficiently increases a manufacture yielding rate of the thin film photovoltaic structure.

The utility model discloses a solar cell which comprises a substrate, a hole transport layer, a light absorption layer, an electron transport layer, a transparent electrode layer and a metal electrode which are sequentially arranged in a laminated mode, the transparent electrode layer comprises a first electrode part and a second electrode part, and the second electrode part is located between the first electrode part and the metal electrode. The side, away from the electron transport layer, of the first electrode part is provided with a first surface, the projection of the second electrode part on the first surface is located in part of the first surface, and the projection of the second electrode part on the first surface covers the projection of the metal electrode on the first surface. Good ohmic contact is achieved under the condition that the overall optical transmittance is not affected, and the problem that the filling factor and the photoelectric conversion rate of a device are low due to a thick transparent electrode film layer is solved.

The application discloses a coating liquid for preparing a PCBM electron transport layer and application thereof. The coating liquid comprises a PCBM precursor, a lithium salt, an organic polymer and a methylamine halide salt. The coating liquid provided by the application improves the conductivity of the PCBM electron transport layer, increases the electron mobility, reduces the series resistance, increases the carrier recombination resistance, reduces the carrier recombination, improves the electron transmission and extraction efficiency, and further improves the open-circuit voltage, the short-circuit current and the fill factor of the prepared perovskite solar cell, finally improves the efficiency of the perovskite solar cell and the assembly; and the application method provided by the application is simple in process, low in cost and beneficial to commercial application.

The invention discloses a gold-silver alloy nanoparticle interface modified copper-zinc-tin-sulfur-selenium film, a preparation method thereof and a solar cell, and belongs to the technical field of photoelectric material new energy. Gold-silver alloy nanoparticles are uniformly distributed on the surface of the copper-zinc-tin-sulfur-selenium film. According to the invention, interface modification is carried out on the CZTSSe film by using the gold-silver alloy nanoparticles, so that the light absorption performance, Raman scattering performance and the like of the CZTSSe film are effectively improved, and then the performance of collection efficiency, open-circuit voltage, short-circuit current density, filling factors and the like of the solar cell is improved by applying the interface-modified CZTSSe to the solar cell. Therefore, the solar cell has more excellent use performance.

The invention provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and particularly relates to the technical field of solar cell preparation. The back contact solar cell comprises an N-type crystalline silicon substrate. The back surface of the N-type crystalline silicon substrate is provided with P-type carrier collection regions and N-type carrier collection regions which are arranged alternately. Wherein the P-type carrier collection region and the N-type carrier collection region are respectively provided with a polycrystalline silicon composite structure, and the surface of each polycrystalline silicon composite structure is provided with a metal electrode; the polycrystalline silicon composite structure comprises a first polycrystalline silicon layer, a second polycrystalline silicon layer and a dielectric layer which are sequentially stacked. According to the back contact solar cell provided by the invention, decoupling and exclusive optimization of passivation, electric conduction and interface insulation functions are realized. The back contact solar cell not only realizes low series resistance and high fill factor, but also remarkably improves the photoelectric conversion efficiency, and has high performance, high reliability and good industrial application prospect.

The invention discloses a hole transport modification layer, a perovskite cell and a preparation method and application thereof, and relates to the technical field of photovoltaics. A self-assembly molecular material and a transport layer passivation layer are formed on a hole transport layer, and the thickness relationship between the hole transport layer and the transport layer passivation layer is optimized, so that the transport layer passivation layer can better modify the interface between the hole transport layer and perovskite; therefore, the short-circuit current density and the fill factor of the perovskite solar cell are remarkably improved.

This invention provides a solar cell and its fabrication method. The solar cell includes a silicon substrate, a plurality of first metal electrodes, and a plurality of second metal electrodes. First doped regions and second doped regions are alternately arranged on a first surface of the silicon substrate, with opposite doping polarities. Each of the plurality of first metal electrodes corresponds one-to-one with a first doped region, and each first metal electrode covers its corresponding first doped region. Similarly, each of the plurality of second metal electrodes corresponds one-to-one with a second doped region, and each second metal electrode partially covers its corresponding second doped region. The width of each first metal electrode is greater than the width of a first doped region. This greater width increases the contact area between the first metal electrode and the first doped region, effectively reducing the contact resistance between them and the series resistance of the cell, thus contributing to improved fill factor and open-circuit voltage.

The invention discloses a preparation method of an in-situ micro-lens integrated infrared detector, and relates to the technology of semiconductors and infrared detectors, and the method comprises the steps: arranging a grid ground structure in an isolation groove of a pixel table surface, and completing the lead-out of an electrode; after the electrode is led out, the detector tube core and the reading circuit are connected in an inverted mode; carrying out mechanochemical polishing and thinning on the substrate of the interconnected chip; photoresist is spin-coated on the back surface of the substrate, and a specified pattern is formed after baking, exposure and development; a convex lens mask structure is prepared on the substrate on the basis of the specified pattern through a photoresist hot melting backflow technology, baking is carried out in a bottom plate constant-temperature and top variable-temperature mode in the hot melting backflow technology, and the upper surface and the lower surface of the specified pattern are contracted inconsistently to form a lens pattern; and transferring the mask structure to a substrate to form an in-situ integrated micro-lens structure. According to the in-situ integrated micro lens, the problem that the light absorption amount is small due to the fact that the pixel filling factor is small can be solved.

The present application relates to a kind of perovskite thin film and its preparation method and use, the preparation method will thiocarbamide as the additive of perovskite precursor liquid, then by spin coating and annealing to the perovskite precursor liquid, obtain the perovskite thin film.The present application is by adding thiocarbamide, utilize its polar and high boiling point nature, solve the film cavity problem caused by solvent retention in perovskite thin film nucleation process, improve the contact condition of perovskite thin film bottom and conductive substrate, to realize the regulation of thin film crystallization process, using the preparation method can obtain the perovskite thin film with less hole, high crystallinity and uniformity, the fill factor of solar cell based on the perovskite thin film can reach 0.73, and photoelectric conversion efficiency can reach 15.6%.

This invention discloses a perovskite solar cell, comprising a transparent conductive layer, a hole transport layer, a perovskite absorber layer, an electron transport layer, and a back electrode layer stacked sequentially. The back electrode layer is a composite structure of an ITO layer and a metal layer. The perovskite solar cell also includes a dipole layer located between the electron transport layer and the ITO layer, with the dipole moment of the dipole layer pointing from the electron transport layer to the ITO layer. By incorporating a dipole layer in the perovskite solar cell, the work function of the electron transport layer and the back electrode layer is modulated to reduce the extraction barrier, resulting in a significant linear increase in the device's built-in potential, and substantial improvements in fill factor, photovoltage, and power conversion efficiency. Furthermore, the excellent ion-blocking ability of the dielectric material alumina enhances the drift scattering blocking effect of the P-N junction, effectively preventing ion migration within the device.

The application provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a substrate, a first electrode layer, a first carrier transport layer, a three-dimensional perovskite layer, a passivation layer, a second carrier transport layer and a second electrode layer which are sequentially stacked. The passivation layer is in contact with the three-dimensional perovskite layer and the second carrier transport layer. The passivation layer comprises a first passivation material and a second passivation material which are uniformly mixed. The first passivation material is an organic halide salt. The second passivation material comprises at least one of an amino group, a carboxyl group, a phosphine group and a sulfonic acid group. The passivation layer between the three-dimensional perovskite layer and the second carrier transport layer can passivate interface defects. The first passivation material in the passivation layer can passivate iodine defects, and the second passivation material in the passivation layer can passivate lead defects. The first passivation material and the second passivation material are mutually synergistic, so that the open-circuit voltage, the short-circuit current density and the fill factor of the perovskite solar cell are effectively improved, and the photoelectric conversion efficiency of the perovskite solar cell is effectively improved.

The application belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with a high-concentration co-doped region, a preparation method and application, which comprises setting N-type doped regions and P-type doped regions which are alternately distributed on the back light surface of an intrinsic amorphous silicon layer, and setting a high-concentration co-doped region between the N-type doped regions and the P-type doped regions, wherein the doping source of the co-doped region comprises a doping source phosphorus of the N-type doped region and a doping source boron of the P-type doped region, the co-doped region and the doping sources of the N-type doped regions and the P-type doped regions form a specific concentration gradient structure, and the specific concentration gradient structure satisfies that the doping concentration of phosphorus contained in the co-doped region is greater than the phosphorus doping concentration in the N-type doped region, and the doping concentration of boron contained in the co-doped region is greater than the boron doping concentration in the P-type doped region. The application optimizes the carrier transport and collection efficiency, improves the fill factor and open-circuit voltage, improves the cell conversion efficiency and stability, and the preparation process is simple and does not need multiple etching openings.