1138 results about "Filling factor" patented technology

A device and method for spatially resolved photodetection and demodulation of temporally modulated electromagnetic waves makes it possible to measure phase, amplitude and offset of a temporally modulated, spatially coded radiation field. A micro-optical element (41) spatially averages a portion (30) of the scene and equally distributes the averaged intensity on two photo sites (51.1.51.2) close to each other. Adjacent to each of these photo sites (51.1) are two storage areas (54.1, 54.2) into which charge from the photo site can be moved quickly (with a speed of several MHz to several tens or even hundreds of MHz) and accumulated essentially free of noise. This is possible by employing the charge-coupled device (CCD) principle. The device combines a high optical fill factor, insensitivity to offset errors, high sensitivity even with little light, simultaneous data acquisition, small pixel size, and maximum efficiency in use of available signal photons for sinusoidal as well as pulsed radiation signals. The device and method may be used in a time-of-flight (TOF) range imaging system without moving parts, offering 2D or 3D range data.

The invention provides a micro-electro-mechanical-system (MEMS) mirror device, comprising: a mirror having a 2-dimensional rotational articulated hinge at a first end, and having a 1-dimensional rotational articulated hinge at a second end opposite the first end; a movable cantilever connected to the mirror through the 1-dimensional rotational articulated hinge; a support structure connected to the mirror through the 2-dimensional rotational articulated hinge and connected to the movable cantilever; whereby movement of said movable cantilever causes rotation of the mirror in a first axis of rotation, and the mirror is also rotatable about a second torsional axis of rotation perpendicular to said first axis of rotation.

The present invention is directed to a method of and a mold for arranging features on a substrate to replicate the features with minimal dimensional variability. The method includes arranging features on a layer to minimize thickness variations in the layer that are attributable to density variations of the plurality of features on the layer. The features are transferred into an underlying substrate. It is believed that by forming the features so as to define a uniform fill factor in the layer, the thickness variations may be reduced, if not abrogated. To that end, one method in accordance with the present invention includes forming a flowable material on the substrate. Thereafter, a plurality of features is formed in a region of the flowable material. The plurality of features are arranged to provide a substantially uniform fill factor in the region.

A pixel cell array architecture having a multiple pixel cells with shared pixel cell components. The individual pixel cell architecture increases the fill factor and the quantum efficiency for the pixel cell. The common pixel cell components may be shared by a number of pixels in the array, and may include several components that are associated with the readout of a signal from the pixel cell. Other examples of the pixel array architecture having improved fill factor for pixels in the array include an angled transfer gate and an efficiently located, shared capacitor.

An apparatus and method for displaying large format images, graphics, and videos. The apparatus comprise a layer of column oriented optical fibers, each fiber is illuminated at one end by at least one laser diode, and a second layer which sits in front of the first layer and is parallel to the first layer, whose projected area substantially overlap that of the first layer. The second layer comprises a plurality of optical fibers arranged in rows. In between the first and second layer sits a third layer of optical switching elements. Alternatively, the second layer can be a light diffusing layer. Laser lights emitted from the laser diodes travel in parallel along respective column fiber until they are redirected by optical switching elements which couple the laser lights within the column fibers to the row fibers or to the difflusing layer directly whereby they are scattered by the diffusing elements to reach the viewing audience. The small size of the fibers results in very small fill factor, allowing light absorbing matrix and backing layer to absorb ambient light effectively. The contrast ratio under ambient light condition is further enhanced by the use of multilayer dielectric optical filter to preferentially absorb ambient light.

In an example embodiment, a wire grid polarizer includes a plurality of parallel conductors having a pitch (P), a width (W), and a height (H). In example embodiments, a fill-factor (W/P) is greater than approximately 0.18 and less than approximately 0.25. In another example embodiment, a display system includes a light source and a light-valve. The display system also includes a wire grid polarizer that includes a plurality of parallel conductors having a pitch (P), a width (W), and a height (H). In example embodiments, a fill-factor (W/P) is greater than approximately 0.18 and less than approximately 0.25.

A storage gate pixel operates such that the storage gate is not required to have the same capacity as a photodiode of the pixel. This provides greater fill factor for the pixel and a higher signal to noise ratio.

The invention relates to a donor-recipient typed conjugated polymer containing two thiofuran and pyrrole and the preparation method and applications thereof. Using a construction mode of donor-recipient typed co polymerization for preparing the conjugated polymer can absorb action spectrum, cover UV-Visible and near infrared region to fully use sunlight. The donor uses a constitution unit of two thiofuran and pyrrole with a good plane performance, high density of electron cloud and easy preparation. The preparation of the conjugated polymer is easy, with absorbing spectrum in the UV-Visible and near infrared region of 300 to1000nm and the energy transforming efficiency being 3 percent. The performances of prepared solar batteries are respectively: white light (light intensity of 100mW/cm<2> ) irradiating, the open-circuit voltage is equal to 0.37 to 0.54 V; the short circuit current is equal to 6.69 to 13.8mA/cm<2>; the packing factor is equal to 0.35 to 0.44; and the efficiency of energy transformation is equal to 1 to 3 percent.

Methods and apparatuses using pixels with shared readout circuits are used to increase pixel fill factor and operation efficiency.

The invention relates to a perovskite solar cell and a preparation method thereof. The perovskite solar cell is composed of an FTO glass substrate, a sandwich structure TiO2/ZnO/TiO2 compact layer, a TiO2 mesoporous/perovskite structure material active light absorption layer, a spiro-OMeTAD hole transferring layer and a gold electrode. Compared with the prior art, the sandwich structure TiO2/ZnO/TiO2 compact layer combines with the advantages and disadvantages of TiO2 and ZnO, so that fill factors of the perovskite solar cell are improved to 70%, and the photoelectric conversion efficiency reaches 12.6%. Equipment for preparing the perovskite solar cell is simple, the preparing process is simple, control is easy, the cost is low, and the perovskite solar cell has a very good industrial application prospect.

An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel.

Microlens arrays (105) having high focusing efficiencies are provided. The high focusing efficiencies are achieved by accurately producing the individual microlenses making up the array at high fill factors. Arrays of positive microlenses are produced by forming a master having a concave surface-relief pattern (101) in a positive photoresist (21) using direct laser writing. Through this approach, the problems associated with the convolution of a finite laser beam with a desired profile for a microlens are overcome. The microlens arrays of the invention have focusing efficiencies of at least 75%.

The invention provides nuclear magnetic resonance equipment realizing improved sensitivity of a probe for receiving a free induction decay (FID) signal in nuclear magnetic resonance (NMR) spectroscopy in a high frequency band of 600 MHz or higher. By manufacturing a solenoid coil of a higher filling factor by using a superconductor of extremely low resistance to high frequency current, sensitivity is increased. A superconducting thin film made of magnesium diboride (MgB₂) formed on a donut plate-type substrate is disposed so that the film surface becomes parallel with the uniform magnetic field. The object is realized by a probe made by a solenoid coil formed by connecting a plurality of coil parts by capacitive coupling via a normal metal lead.

A discrete pattern, formed by dots discretely arranged in two dimensions, is provided wherein the dots are generated in a low discrepancy sequence. The dots are preferably generated in a discrete pattern wherein the square of discrepancy D satisfies the formula,

D≦0.13N^−1.15  (1)

Further, the method provides for generation of, and the appartus provides implementation of, a discrete pattern even when the filling factor rapidly changes by automatically generating or deleting dots.

A programmable spatial filter for use as a Fourier plane filter in dark field wafer inspection systems, based on the use of MEMS (Micro-Electro-Mechanical Systems) devices. In comparison with prior art systems, especially those using LCD's, the use of MEMS devices provide a number of potential advantages, including good transmission in the UV, a high fill factor, polarization independence and a high extinction ratio since the shutter is opaque when closed. The MEMS devices can be flap devices, artificial eyelid, or double shutter devices. Additionally, a novel spatial light modulator (SLM) assembly having a double layer of SLM arrays is described, in which the fill factor is increased in comparison to a single layer SLM using the same devices, by positioning the dead areas of the elements of both arrays collinearly in the modulated beam. This SLM assembly can be implemented using pixelated LCD arrays or MEMS arrays.

An image sensor having a pixel array comprises periphery elements formed over a substrate, an oxide layer formed over the periphery elements, an epitaxial layer formed in an opening in the oxide layer in a pixel array area, and a plurality of photosensitive elements of the pixel array formed in the epitaxial layer. Formation of an initial metallization layer occurs after the formation of the photosensitive elements in the epitaxial layer. The photosensitive elements can thus be formed in the epitaxial layer at a higher level within an image sensor stack than that of the initial metallization layer. This advantageously allows stack height and pixel size to be reduced, and fill factor to be increased. The image sensor may be implemented in a digital camera or other type of digital imaging device.

The present disclosure relates to photosensitive optoelectronic devices comprising a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer comprising: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

A variable reluctance motor and methods for control. The motor may include N motor phases, where N equals three or more. Each motor phase may include a coil to generate a magnetic flux, a stator and a rotor. A flux-carrying element for the rotor and/or stator may be made entirely of SMC. The stators and rotors of the N motor phases may be arranged relative to each other so that when the stator and rotor teeth of a selected phase are aligned, the stator and rotor teeth in each of the other motor phases are offset from each other, e.g., by an integer multiple of 1/N of a pitch of the stator or rotor teeth. A fill factor of the coil relative to the space in which it is housed may be at least 60%, and up to 90% or more. The stator and rotor flux-carrying elements together may include at most three separable parts.

In a first embodiment an active pixel sensor includes a photodiode for capturing photocharge, a reset transistor for resetting the photodiode to a reset potential, and a readout transistor, and in a second embodiment an active pixel sensor includes a photodiode for capturing photocharge, a reset transistor for resetting the photodiode to a reset potential, a transfer transistor for transferring captured photocharge, and a readout transistor. In both embodiments, the readout transistor has a drain that is coupled to a first supply voltage during integration of photocharge and a second supply voltage during readout of the photocharge. Accordingly, the sensitivity of an active pixel sensor is increased by increasing the fill factor, the noise an active pixel sensor is reduced by increasing the relative size of the readout transistor, and the gain is compressive as the relative light intensity in an active pixel sensor increases.

Superconducting nanowire avalanche photodetectors (SNAPs) have using meandering nanowires to detect incident photons. When a superconducting nanowire absorbs a photon, it switches from a superconducting state to a resistive state, producing a change in voltage that can be measured across the nanowire. A SNAP may include multiple nanowires in order to increase the fill factor of the SNAP's active area and the SNAP's detection efficiency. But using multiple meandering nanowires to achieve high fill-factor in SNAPs can lead to current crowding at bends in the nanowires. This current crowding degrades SNAP performance by decreasing the switching current, which the current at which the nanowire transitions from a superconducting state to a resistive state. Fortunately, staggering the bends in the nanowires reduces current crowding, increasing the nanowire switching current, which in turn increases the SNAP dynamic range.

A binary type diffractive optical element for scalar optics uses a composite artificial material comprising, in a first portion Ma₁, microstructures according to a first geometry for which the effective index decreases with the fill factor and, in a second portion Ma₂, microstructures according to a second geometry for which the effective index increases with the fill factor. In one example, a composite artificial material is thus formed by hole type microstructures over a first portion, the smallest hole giving the maximum effective index value of said composite artificial material, and pillar type microstructures, the smallest pillar giving the minimum effective index value of said composite artificial material.

An active pixel sensor for digital imaging comprises a detector, a readout circuit, and a resistive load. The detector is integrated with the readout circuit and the readout circuit has a plurality of amorphous silicon based thin-film transistors (TFTs). The readout circuit is embedded under the detector to provide a high fill factor. A signal charge is accumulated on a pixel capacitance during an integration mode and is transferred to an external electronics for data acquisition via the readout circuit during a readout mode. An output current from the readout circuit is converted to a voltage through the resistive load. The resistive load may be a thin-film transistor operated in a saturation regime and having a width larger than a length in size. The active pixel sensor amplifies an on-pixel sensor input signal to improve a noise immunity of sensitive sensor input signals to external noise sources and its linearity together with a fast pixel readout time.