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15950 results about "Nuclear magnetic resonance" patented technology
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Nuclear magnetic resonance (NMR) is a physical observation in which nuclei in a strong constant magnetic field are perturbed by a weak oscillating magnetic field (in the near field and therefore not involving electromagnetic waves) and respond by producing an electromagnetic signal with a frequency characteristic of the magnetic field at the nucleus. This process occurs near resonance, when the oscillation frequency matches the intrinsic frequency of the nuclei, which depends on the strength of the static magnetic field, the chemical environment, and the magnetic properties of the isotope involved; in practical applications with static magnetic fields up to ca. 20 tesla, the frequency is similar to VHF and UHF television broadcasts (60–1000 MHz). NMR results from specific magnetic properties of certain atomic nuclei. Nuclear magnetic resonance spectroscopy is widely used to determine the structure of organic molecules in solution and study molecular physics, crystals as well as non-crystalline materials. NMR is also routinely used in advanced medical imaging techniques, such as in magnetic resonance imaging (MRI).
Zero-mode clad waveguides for performing spectroscopy with confined effective observation volumes
InactiveUS6917726B2Effective volumeEasy to useMicrobiological testing/measurementBiological material analysisAnalyteSpectroscopy
The present invention is directed to a method and an apparatus for analysis of an analyte. The method involves providing a zero-mode waveguide which includes a cladding surrounding a core where the cladding is configured to preclude propagation of electromagnetic energy of a frequency less than a cutoff frequency longitudinally through the core of the zero-mode waveguide. The analyte is positioned in the core of the zero-mode waveguide and is then subjected, in the core of the zero-mode waveguide, to activating electromagnetic radiation of a frequency less than the cut-off frequency under conditions effective to permit analysis of the analyte in an effective observation volume which is more compact than if the analysis were carried out in the absence of the zero-mode waveguide.
Owner:CORNELL RES FOUNDATION INC
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.
Owner:SAMSUNG SEMICON
Method of trimming technology
ActiveUS7354847B2Easy to controlAvoid insufficient thicknessSolid-state devicesSemiconductor/solid-state device manufacturingResistMOSFET
A process for trimming a photoresist layer during the fabrication of a gate electrode in a MOSFET is described. A bilayer stack with a top photoresist layer on a thicker organic underlayer is patternwise exposed with 193 nm or 157 nm radiation to form a feature having a width w1 in the top layer. A pattern transfer through the underlayer is performed with an anisotropic etch based on H2 / N2 and SO2 chemistry. The feature formed in the bilayer stack is trimmed by 10 nm or more to a width w2 by a HBr / O2 / Cl2 plasma etch. The pattern transfer through an underlying gate layer is performed with a third etch based on HBr / O2 / Cl2 chemistry. The underlayer is stripped by an O2 ashing with no damage to the gate electrode. Excellent profile control of the gate electrode is achieved and a larger (w1−w2) is possible than in prior art methods.
Owner:TAIWAN SEMICON MFG CO LTD
Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
InactiveUS6888742B1Enhanced output signalWriting time becomes shortDigital storageMagnetic memorySpin transfer
A method and system for providing a magnetic element capable of being written in a reduced time using the spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a ferromagnetic pinned layer, a nonmagnetic intermediate layer, and a ferromagnetic free layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic intermediate layer resides between the pinned layer and the free layer. The free layer has a magnetization with an easy axis in a second direction. The first direction is in the same plane as the second direction and is oriented at an angle with respect to the second direction. This angle is different from zero and π radians. The magnetic element is also configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
Owner:SAMSUNG SEMICON
Method and apparatus to estimate location and orientation of objects during magnetic resonance imaging
InactiveUS6516213B1Limited accuracy of orientationSatisfies requirementDiagnostic recording/measuringSensorsMagnetic field gradientThree-dimensional space
Method and apparatus for determining the instantaneous location, the orientation of an object moving through a three-dimensional space by applying to the object a coil assembly including a plurality of sensor coils (20) having axes of known orientation with respect to each other including components in the three orthogonal planes; generating a time-varying, three-dimensional magnetic field gradient having known instantaneous values of magnitude and direction; applying the magnetic field gradient to the space, and object moving therethrough to induce electrical potentials in the sensor coils; measuring the instantaneous values of the induced electrical potentials generated in the sensor coils; processing the measured instantaneous values generated in the sensor coils together with the known magnitude, direction of the generated magnetic field gradient, the known relative orientation of the sensor coils in the coil assembly to compute the instantaneous location, orientation of the object within the space.
Owner:ROBIN MEDICAL
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
InactiveUS7190611B2Minimizing densityReduce process complexityGalvano-magnetic devicesSolid-state devicesHigh densitySpin transfer
A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.
Owner:SAMSUNG SEMICON
Electro-magneto volume tomography system and methodology for non-invasive volume tomography
InactiveUS20180325414A1Maximize surface areaMaximize number of turnReconstruction from projectionMaterial analysis by electric/magnetic meansCapacitanceImage resolution
A system and method capable of performing multiple types of non-invasive tomographic techniques. The system is capable, via electronic control, of detecting and imaging materials within a volume using electrical capacitance, displacement phase current, magnetic inductance, and magnetic pressure sensing. The system is also able to control the amplitude, phase, and frequency of individual electrode excitation to increase imaging resolution and phase detection. This allows many dimensions of non-invasive data to be captured without the need for multiple instruments or moving parts, at a high data capture rate.
Owner:TECH4IMAGING
Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
Owner:SAMSUNG SEMICON
Adaptive calibration for pulse oximetry
InactiveUS6839580B2Improve accuracy and precisionDiagnostic recording/measuringSensorsPulse oximetryLength wave
A method for calibrating a pulse oximeter device and an apparatus incorporating the method and a system for utilizing the method. The method is based on modeling light propagation in tissue at two wavelengths, typically, one in the red and one in the infrared range of the spectrum. A formula is derived relating the arterial oxygen saturation to a ratio R commonly measured by standard pulse oximeters. A specific parameter is identified and utilized in the calibration of the oximeter. This parameter is formulated in terms of the DC signals measured by the pulse oximeter at the two wavelengths. An empirical method for estimating this parameter based on experimental data is also described.
Owner:RIC INVESTMENTS LLC
Spin transfer magnetic element having low saturation magnetization free layers
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and / or ferrimagnetically doped to provide low saturation magnetization(s).
Owner:SAMSUNG SEMICON
Spin transfer magnetic element having low saturation magnetization free layers
ActiveUS20050184839A1Current densityNanostructure applicationNanomagnetismMagnetic memoryNon magnetic
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and / or ferrimagnetically doped to provide low saturation magnetization(s).
Owner:SAMSUNG SEMICON
Lead electrode for use in an MRI-safe implantable medical device
A medical lead is configured to be implanted into a patient's body and comprises a lead body, and an electrode coupled to the lead body. The electrode comprises a first section configured to contact the patient's body, and a second section electrically coupled to the first section and configured to be capacitively coupled to the patient's body.
Owner:MEDTRONIC INC
Nanoparticle Mediated Ultrasound Therapy and Diagnostic Imaging
InactiveUS20080045865A1Enhanced and localized and targeted hyperthermiaMinimizing collateral damageUltrasonic/sonic/infrasonic diagnosticsUltrasound therapyDiseaseTissue repair
The present invention relates to systems and methods for localized delivery of heat, useful for localized imaging and treatment of a biological material. The systems and methods of the invention can be utilized for localized treatment of cancer, inflammation or other disorders involving over proliferation of tissue, and for tissue repair. The method comprises exposing nanoparticles to electromagnetic radiation under conditions wherein the nanoparticles generate microbubbles which emit heat when exposed to ultrasonic radiation.
Owner:KISLEV HANOCH
High field magnetic resonance
ActiveUS20080129298A1Electric/magnetic detectionMeasurements using magnetic resonanceResonanceHigh field mri
Owner:RGT UNIV OF MINNESOTA
Waveguides for performing spectroscopy with confined effective observation volumes
InactiveUS7013054B2Effective volumeEasy to useCladded optical fibreMicrobiological testing/measurementAnalyteSpectroscopy
The present invention is directed to a method and an apparatus for analysis of an analyte. The method involves providing a zero-mode waveguide which includes a cladding surrounding a core where the cladding is configured to preclude propagation of electromagnetic energy of a frequency less than a cutoff frequency longitudinally through the core of the zero-mode waveguide. The analyte is positioned in the core of the zero-mode waveguide and is then subjected, in the core of the zero-mode waveguide, to activating electromagnetic radiation of a frequency less than the cut-off frequency under conditions effective to permit analysis of the analyte in an effective observation volume which is more compact than if the analysis were carried out in the absence of the zero-mode waveguide.
Owner:CORNELL RES FOUNDATION INC
Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
ActiveUS20120280336A1Improve thermal stabilityHigh MR ratioMagnetic-field-controlled resistorsGalvano-magnetic material selectionPerpendicular anisotropyAlloy
A magnetic element is disclosed that has a composite free layer with a FM1 / moment diluting / FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
Owner:TAIWAN SEMICON MFG CO LTD
Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
InactiveUS6950335B2Good reproducibilityEliminate errorsNanomagnetismMagnetic-field-controlled resistorsMagnetizationSemiconductor
Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation. A magnetic field (34) is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications
ActiveUS20090257151A1Raise the ratioNot to damageMagnetic measurementsVacuum evaporation coatingPerpendicular anisotropySpins
A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co / Ni)x multilayer. The (Co / Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co / Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.
Owner:TDK CORPARATION +1
Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV / kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.
Owner:RENESAS ELECTRONICS CORP +1
High speed low power magnetic devices based on current induced spin-momentum transfer
InactiveUS6980469B2Operational advantageReduce the required powerNanomagnetismNanoinformaticsMagnetic memoryMagnetization
The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer with a fixed magnetization direction, a free magnetic layer with a free magnetization direction, and a read-out magnetic layer with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer, and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer. The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
Owner:NEW YORK UNIV
Magnetoresistive element and magnetic memory
InactiveUS20070297220A1Easily magnetizedNanomagnetismMagnetic-field-controlled resistorsIn planeInter layer
A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.
Owner:KK TOSHIBA
Method of magnetic resonance imaging
InactiveUS6373250B1Reduce leakageReduce repetitionsMeasurements using NMR imaging systemsElectric/magnetic detectionMagnetic gradientResonance
A method of slice selective multiple quantum magnetic resonance imaging of an object is disclosed. The method is effected by implementing the steps of (a) applying a radiofrequency pulse sequence selected so as to select a coherence of an order n to the object, wherein n is zero, a positive or a negative integer other than ±1; (b) applying magnetic gradient pulses, so as to select a slice of the object to be imaged arid to create an image; and (c) acquiring a radiofrequency signal resulting from the object, so as to generate a magnetic resonance slice image of the object. The method provides slice selective multiple quantum magnetic resonance images of yet unprecedented quality in terms of contrast. The method is particularly useful for imaging connective tissues.
Owner:ENTERIS BIOPHARMA +1
Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
ActiveUS7057921B2Reduce outer surfaceHigh areal resistanceNanomagnetismMagnetic-field-controlled resistorsDamping constantMagnetic memory
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes first pinned, spacer, free, spin barrier, and second pinned layers. The spacer layer is nonmagnetic and resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer resides between the spacer and spin barrier layers. The spin barrier layer is between the free and second pinned layers. The spin barrier layer is configured to reduce an outer surface contribution to the free layer damping constant. In one aspect, the spin barrier layer has a high areal resistance and may substantially eliminate spin pumping induced damping. In another aspect, the magnetic element also includes a spin accumulation layer between the spin barrier and free layers. The spin accumulation layer has a high conductivity and may have a long spin diffusion length.
Owner:SAMSUNG SEMICON
Methods and systems for monitoring and obtaining information of at least one portion of a sample using conformal laser therapy procedures, and providing electromagnetic radiation thereto
InactiveUS7538859B2Force measurement by measuring optical property variationSurgical instrument detailsElectromagnetic radiationLength wave
In one exemplary embodiment of the present invention, method and system can be provided for obtaining information associated with at least one portion of a sample. For example, a temperature change can be caused in the portion of the sample. At least one first electro-magnetic radiation can be forwarded to a section near or in the portion of the sample. A deformation of the section can be identified at a plurality of depths as a function of (i) a phase of at least one second electro-magnetic radiation provided from the section, and / or (ii) a rate of change of the phase and / or an amplitude of the second electro-magnetic radiation. In another exemplary embodiment of the present invention, method and system can be provided for controlling a temperature distribution in a sample. For example, an electro-magnetic radiation can be provided to the section in the sample at a particular wavelength. The temperature distribution can be controlled by modifying the particular wavelength of the electro-magnetic radiation when the electro-magnetic radiation is provided to the section.
Owner:THE GENERAL HOSPITAL CORP
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
ActiveUS7369427B2Lower average currentReduce consumptionNanomagnetismGalvano-magnetic material selectionSpinsSpin transfer
A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
Owner:SAMSUNG SEMICON
Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
Owner:GLOBALFOUNDRIES US INC
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
InactiveUS6920063B2Efficient and localized phenomenonEnhanced output signalNanostructure applicationNanomagnetismMagnetic memorySpin transfer
A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
Owner:SAMSUNG SEMICON
Magnetic induction signal repeater
ActiveUS20110043051A1Near-field transmissionElectromagnetic wave systemAudio power amplifierResonance
A magnetic induction (MI) repeater includes first and second coils configured to have the same resonance frequency and to be substantially isolated from one another, and an amplifier connected to the first and second coils and configured to receive a signal induced in the first coil by a first magnetic field and output, via the second coil, a second magnetic field based on the signal, wherein the second magnetic field is amplified relative to the first magnetic field.
Owner:COCHLEAR LIMITED
Medical implantable system for reducing magnetic resonance effects
Apparatus and methods are disclosed for reducing the potentially harmful effects of electromagnetic waves on an implantable medical device. In one embodiment of the present invention, an implantable medical system comprising a dual threshold magnetic sensor capable of detecting an elevated magnetic field is disclosed. The sensor can comprise a solid-state sensor capable of detecting a static magnetic field in excess of about 1500 Gauss. The magnetic sensor can be operatively coupled to electronics that are capable of altering the operation of the system upon detection of an elevated magnetic field by the magnetic sensor.
Owner:MEDTRONIC INC
Thermal controlling method, magnetic field generator and MRI apparatus
InactiveUS20080048656A1Permanent magnetsInductances/transformers/magnets manufactureMagnetic polesRoom temperature
With a view toward implementing a thermal controlling method for making reversible a temperature characteristic of a magnetic field generator using permanent magnets small in Hcj, a magnetic field generator whose temperature characteristic is reversible, using permanent magnets small in Hcj, and an MRI apparatus provided with such a magnetic field generator, there is provided a method for controlling the temperature of a magnetic field generator having a pair of disc-shaped permanent magnets whose magnetic poles opposite in polarity to each other are opposed to each other with spacing defined therebetween, and a yoke that forms return passes for magnetic fluxes of the permanent magnets, comprising the steps of raising the temperature from room temperature to a temperature higher than the room temperature, maintaining the temperature higher than the room temperature, and lowering the temperature from the temperature higher than the room temperature to the room temperature, whereby the temperature characteristics of the permanent magnets are made reversible.
Owner:GE MEDICAL SYST GLOBAL TECH CO LLC
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