168 results about "Perpendicular magnetic anisotropy" patented technology

The invention provides a track electronic device based on a track Hall effect and a magnetic memory device. The track electronic device comprises a substrate; the ferromagnetic / non-magnetic heterojunction structure is prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track source, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure is made of a 3d-5d metal material and a two-dimensional TMD material, and the ferromagnetic layer structure is an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer. According to the orbital electronics device and the magnetic storage device which are formed on the basis of an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer as a ferromagnetic layer, the orbital torque efficiency can be enhanced, the critical overturning current density is reduced, and the overturning speed is increased.

A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.

The invention provides a magnetic heterojunction structure for current-spin current conversion, a spin electronic device and a preparation method. The magnetic heterojunction structure comprises a substrate, a first electrode, a second electrode, a third electrode and a fourth electrode, the magnetic heterojunction is formed on the substrate, the magnetic heterojunction comprises a ferromagnetic layer and a non-magnetic layer, and the non-magnetic layer is an alloy layer formed by a material of a group IIIA element and a material of a group VA element in a periodic table of elements; wherein the ferromagnetic layer has perpendicular magnetic anisotropy. Compared with the prior art, the method has the advantages that a high-quality magnetic heterojunction structure can be obtained by using the prepared high-quality III-V group alloy film by utilizing the contribution of the spin current from the P orbit, so that a high-quality electronic device is obtained, a way is opened up for improving the spin current efficiency, and the range of materials which can be applied to spintronics is expanded.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu / cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A / m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate, a seed layer overlying the substrate, and a nitride layer, overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a magnetic layer overlying the templating layer, a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier. The magnetic layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA).

The invention provides an orbital electronics device based on an orbital Hall effect and a preparation method thereof. The orbital electronics device comprises a substrate; the sensor comprises a substrate and a ferromagnetic / non-magnetic heterojunction structure prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track Hall layer, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure serving as the orbit Hall layer is formed by doping an oxide or metal (second metal) into an orbit Hall channel layer (first metal or two-dimensional transition metal sulfide (TMD) material). According to the invention, the oxide or metal is doped as the orbit Hall layer, so that the orbit torque efficiency can be enhanced, and the critical flip current density can be reduced.

The invention discloses a magnetic electronic device for generating track torque by using a metal vanadium or titanium track Hall effect and a manufacturing method thereof. The device comprises a substrate, a track Hall structure containing a vanadium or titanium layer, and a heavy metal layer and a ferromagnetic layer which are adjacent to the track Hall structure, when a charge current passes through the vanadium or titanium layer, a transverse track current is generated based on the track Hall effect, and the track current is injected into the ferromagnetic layer and then converted into an effective track torque for controlling the magnetization state of the ferromagnetic layer. Preferably, the ferromagnetic layer has a perpendicular magnetic anisotropy. According to the invention, the light transition metal vanadium or titanium is used as the track Hall material, the experiment proves that a huge track Hall angle greater than 0.45 can be obtained, and meanwhile, the resistivity of the material is lower, so that the shunting phenomenon can be reduced in an actual device, and the critical current density for realizing write-in flipping can be obviously reduced. The device is simple in structure and compatible with an existing semiconductor process, and a brand new material platform is provided for developing a low-power-consumption and high-density magnetic random access memory (MRAM).

Compared with a common structure of a magnetic tunnel junction, the low-power-consumption nonvolatile memory device, the memory array and the preparation method thereof are characterized in that a non-uniform magnetic moment induction layer is additionally sputtered on an upper interface or a lower interface of a free layer or is consistent with the common structure of the magnetic tunnel junction; the difference is that the thickness of the upper ferromagnetic layer or the lower ferromagnetic layer in the free layer is not uniform, the upper ferromagnetic layer or the lower ferromagnetic layer grows in a wedge shape from thin to thick, and the perpendicular magnetic anisotropy is reduced along with increase of the thickness. The invention provides two low-power-consumption nonvolatile memory device structure design schemes and storage array arrangement design, is suitable for a CMOS standard logic circuit, and can effectively improve the writing speed, reduce the MTJ overturning current density and the writing energy consumption, and improve the MRAM storage density.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate (1401), a seed layer (1403) overlying the substrate, and a nitride layer (1403A) overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer (1403B) outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a first magnetic layer (1405) overlying the templating layer, a tunnel barrier (1409) outward of the first magnetic layer; and a second magnetic layer (1411) outward of the tunnel barrier. The first magnetic layer (1405) includes a Heusler compound and exhibits perpendicular magnetic anisotropy, PMA.

A spin device is disclosed in which a magnetic domain wall is moved to the center region of a magnetic free layer. The magnetic domain wall is moved and the perpendicular magnetic anisotropy is changed by avoiding a number of defects distributed at the edge or edge region of the magnetic free layer. So, stable operation of the spin device is secured.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

The invention provides a magnetic tunnel junction structure, a preparation method thereof, a memory and electronic equipment. The magnetic tunnel junction structure comprises a hard magnetic free layer, a barrier layer, a reference layer, a coupling dielectric layer and an in-plane ferromagnetic layer, the barrier layer and the coupling dielectric layer are stacked on the surfaces of the two opposite sides of the hard magnetic free layer respectively, the reference layer is arranged on the side, away from the hard magnetic free layer, of the barrier layer, and the in-plane ferromagnetic layer is arranged on the side, away from the hard magnetic free layer, of the coupling dielectric layer. The material of the hard magnetic free layer comprises a hard magnetic material with perpendicular magnetic anisotropy, and the material of the in-plane ferromagnetic layer comprises a ferromagnetic material with in-plane magnetic anisotropy. The magnetic tunnel junction structure can avoid the problem of stray fields caused by external magnetic electrodes in the prior art, the structure is effectively simplified, the shunt effect is reduced, and the anti-interference capability of the magnetic tunnel junction can be remarkably improved.

The invention relates to the field of magnetic field detection, and discloses a method for integrally detecting a three-dimensional vector magnetic field based on excitation and reading, a spin-orbit torque device sensor is adopted, a ferromagnetic material of the sensor has zero residual magnetism and perpendicular magnetic anisotropy, and the method comprises the following steps: applying excitation current to the sensor, and reading output voltage at the same time; obtaining R-H curves of an independent x-direction magnetic field, an independent y-direction magnetic field and an independent z-direction magnetic field; the sensor is placed in a magnetic field to be measured, information of each component of a magnetic field vector is solved through operation by changing the polarity and direction of pulse current, and the size and direction of an unknown magnetic field are obtained according to three components obtained in three directions. Under the combined action of the spin-orbit torque in the sensor, the anisotropic field of the magnetic layer of the zero-remanence magnet, the demagnetizing field and the applied external magnetic field, the write-in and read operations are completed at the same time under the driving of the pulse current, and the function of rapidly and accurately measuring the three-dimensional magnetic field by a single device can be realized.

A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

In embodiments of the present disclosure, logic devices include magnetically coupled and electrically isolated perpendicular magnetic anisotropy (PMA) ferromagnet (FM) material layers. The logic devices may be read based on the anomalous Hall effect (AHE).

The invention relates to a magnetic-field-sensitive bridge resistor arrangement (20) composed of at least two bridge resistors (14) arranged adjacently on a substrate (12) for a bridge circuit (10) that is magnetic-field-sensitive in a main axis direction (SA). Each bridge resistor (14) comprises a series circuit composed of multiple TMR layer structures (22, 70, 72). Each TMR layer structure (22, 70, 72) comprises an antiferromagnetic layer (24), at least one first fixed ferromagnetic layer (26) having a first fixed magnetization direction (28), fixed substantially in the direction of the main axis direction (SA), in a plane of the TMR layer structure (22, 70, 72), and a free ferromagnetic layer (30) having a free magnetization direction (32), wherein a non-magnetic intermediate layer (34) is arranged between the free ferromagnetic layer (30) and the at least first fixed ferromagnetic layer (24). The invention proposes that the free magnetization direction (32) for forming a PMA (perpendicular magnetic anisotropy) layer structure is oriented perpendicular to the plane of the TMR layer structure (22, 70, 72) in the magnetic-field-free state, and the first fixed magnetization directions (28) of TMR layer structures (22, 70, 72) of the bridge resistors (14) arranged adjacently on the substrate (12) are different to one another. For this purpose, a temperature of at least 260°C to at most 350° over a predeterminable period of at least 1 h to at most 12 h and a field strength of a coupled pretreatment magnetic field (Hz) with a magnetic flux density strength of less than 500 mT can be used during production. Secondary aspects propose a bridge circuit for measuring a weak magnetic field and a method for producing the bridge resistor arrangement (20).

The present invention discloses a spin-orbit torque magnetic memory and a preparation method thereof, relating to the field of electronics. The spin-orbit torque magnetic memory includes: a heavy metal layer and a composite magnetic tunnel junction disposed on the heavy metal layer. Among them, the composite magnetic tunnel junction includes: a composite free layer, a non-magnetic barrier layer, and a fixed layer. The composite free layer and the fixed layer are respectively disposed on both sides of the non-magnetic barrier layer. The composite free layer includes a free layer and an induction layer. The induction layer is disposed between the free layer and the tunneling resistance layer. In response to a first signal, the induction layer and the free layer are flipped, and the flipping actions of the two are consistent to achieve the flipping of the composite free layer. The induction layer is used to reduce the demagnetization energy of the free layer to reduce the critical current. It can be seen that by disposing an induction layer in the magnetic tunnel junction to generate perpendicular magnetic anisotropy energy, the effective demagnetization energy of the free layer is reduced, thereby reducing the magnitude of the flipping current and reducing the loss during the operation of the device.

The present invention provides a spintronic device with polymorphism and synapse-like properties, including a substrate layer and a magnetic layer on the substrate layer. The material used for the magnetic layer is ferrimagnetic, and the magnetic layer has an anisotropy gradient or a DMI gradient through a ferrimagnetic composition gradient. Its advantages are as follows: enabling the spintronic device to achieve the magnetic moment reversal of a ferrimagnetic with perpendicular magnetic anisotropy driven by the spin-orbit torque under zero magnetic field at room temperature, laying a foundation for the realization of next-generation high-performance and high-stability spintronic information storage and logic devices.

A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

Top-pinned magnetic tunnel junction stack, MTJ stack, comprising: a free magnetic layer (32) having a body-centered cubic (BCC) structure; a tunnel barrier layer (34) having a BCC structure and disposed on the free magnetic layer; and a pinned magnetic layer structure (36) arranged on the tunnel barrier layer, the pinned magnetic layer structure comprising, from bottom to top, a first pinned magnetic layer (38) having a BCC structure, a crystal grain growth control layer (40), and a second pinned magnetic layer (42) having the same magnetization orientation as the first pinned magnetic layer and a face-centered cubic (FCC) structure or a hexagonal closest packing (HCP) structure.

A magnetic memory device includes a spin-orbit torque (SOT) induction structure which may be strained and seedless and formed with a perpendicular magnetic anisotropy. A magnetic tunnel junction (MTJ) stack is disposed over the SOT induction structure. A spacer layer may decouple layers between the SOT induction structure and the MTJ stack or decouple layers within the MTJ stack. One end of the SOT induction structure may be coupled to a first transistor and another end of the SOT induction structure coupled to a second transistor.

The invention relates to the technical field of magnetic materials. The invention provides a light metal-based vertical magnetic anisotropy thin film and a preparation method thereof. The light metal-based vertical magnetic anisotropy thin film structure is a light metal non-magnetic layer / CoFeB / MgO / Ta layer multi-layer film, the use of strong spin orbit coupled heavy metal materials such as W and Ta is avoided, and the preparation cost is reduced; according to the preparation method of the light metal-based vertical magnetic anisotropy thin film, atmosphere outside argon is not needed during magnetron sputtering of the thin film, the sputtering rate is controlled through off-axis sputtering to optimize the quality of a CoFeB / MgO interface, annealing machining is not needed, the low-cost vertical magnetic anisotropy thin film is obtained, meanwhile, a stainless steel mask plate in a Hall bar shape is combined, and the light metal-based vertical magnetic anisotropy thin film is obtained. The prepared thin film has a Hall bar shape, so that photoetching processing is not needed, a binding wire can be directly carried out, an abnormal Hall effect test is carried out in a magnetic field, and a rectangular Hall loop is obtained.

The present invention provides a CoFeB-based magnetic multilayer film and a preparation method thereof. The present invention introduces a TiC layer, which can effectively inhibit the diffusion of Ta, making the Ta / CoFeB interface smoother, which is conducive to obtaining perpendicular magnetic anisotropy; the TiC layer can effectively introduce C atoms into the multilayer film, and the introduction of C atoms can effectively regulate the orbital hybridization between Fe and O, and then can effectively drive the magnetic anisotropy of the multilayer film from in-plane to out-of-plane through the double-layer action of C and O double ions, that is, the magnetic multilayer film obtains perpendicular magnetic anisotropy; the present invention increases the degree of freedom of material regulation and improves the amplitude of performance regulation through the regulation of C and O double ions, greatly improves the regulation of the perpendicular magnetic anisotropy of the film from multiple angles, and further improves the thermal stability of the CoFeB-based magnetic multilayer film.

The invention discloses a rare earth doped perpendicular magnetic anisotropy oxide thin film and a preparation method thereof, and relates to the field of hard magnetic rare earth element doped oxide thin film materials, the rare earth doped perpendicular magnetic anisotropy oxide thin film has (001) plane crystal orientation and comprises a substrate and a thin film layer, the substrate is MgAl2O4 (001), and the thin film layer is LaxNi1-xCo2O4 (001). According to the rare earth doped perpendicular magnetic anisotropy oxide thin film and the preparation method thereof, lattice strain caused by mismatching of ion radius sizes can be overcome, lanthanum is doped into a crystal structure of spinel oxide NiCo2O4, a radio frequency magnetron sputtering preparation process is adopted, La0. 05Ni0. 95Co2O4 and La0. 1Ni0. 9Co2O4 target materials are adopted, and the rare earth doped perpendicular magnetic anisotropy oxide thin film is prepared. A series of La0. 05Ni0. 95Co2O4 and La0. 1Ni0. 9Co2O4 films with different thicknesses are prepared, the obtained films have stable vertical magnetic anisotropy, the Curie temperature is above room temperature, and the films have excellent conductivity and good performance.

A magnetic device capable of field-free spin-orbit torque includes a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, wherein the free ferromagnetic layer includes an in-plane magnetic anisotropy ferrimagnetic layer, a perpendicular magnetic anisotropy free ferromagnetic layer, and a non-magnetic layer positioned between the in-plane magnetic anisotropy ferrimagnetic layer and the perpendicular magnetic anisotropy free ferromagnetic layer.

This application discloses a magnetic tunnel junction memory device based on a bismuth selenide and nickel iodide heterojunction substrate. The memory includes, from top to bottom, a top electrode, a SOT-MTJ, and a substrate. The SOT-MTJ includes, from top to bottom, a reference layer, a tunneling layer, a heavy metal layer, and a free layer. The substrate is a Bi2Se3 and NiI2 heterojunction structure. Bi2Se3 facilitates the conversion of current into spin-orbit torque, enabling current-induced field-free magnetization reversal. NiI2 has vertical magnetic anisotropy, which can reduce the critical reversal current. An artificial antiferromagnetic structure (CoFeB / MgO / Ta / W / CoFeB) with vertical magnetic anisotropy is adopted, with Ta / W composite heavy metal as the coupling layer. The two antiferromagnetically coupled CoFeB layers switch between parallel and antiparallel states under the action of SOT. Both Ta and W have large spin Hall angles, which are very beneficial for generating spin-orbit torque to reverse the magnetic moment.

The invention relates to the technical field of current detection, in particular to a wide-range closed-loop TMR current sensor based on interlayer exchange coupling. Comprising a substrate, a buffer layer, a vertical magnetic anisotropy thin film, an oxide tunneling layer, an in-plane magnetic anisotropy thin film and a protective layer which are sequentially arranged from bottom to top, the substrate is a silicon substrate wafer, and SiO2 is oxidized on the surface of the substrate to improve the adhesiveness of an electronic thin film and the surface roughness of the wafer; the buffer layer is made of non-magnetic metal and is used for improving the surface roughness of a wafer and improving the performance of a magnetic film; the perpendicular magnetic anisotropy thin film is of an artificially synthesized antiferromagnetic structure designed based on the interlayer exchange coupling effect. The TMR effect formed between the perpendicular magnetic anisotropy thin film and the in-plane magnetic anisotropy thin film and the designed artificially synthesized antiferromagnetic structure are utilized, so that the current detection range of the current sensor is remarkably enlarged.

Method for manufacturing an STT-MTJ-MRAM cell, which is produced as a sequence of material layers, comprising the following steps: Providing a structured substrate (5); Establishing a seed layer (10) on the structured substrate; Fabrication of an AP2 layer (20) of an RKKY-coupled pinned SAF layer structure (55) on the seed layer; Creating an RKKY coupling layer (30) on the AP2 layer; Fabrication of a first part (42) of an AP1 layer on the RKKY coupling layer at ambient temperature to fabricate a material layer stack (5, 10, 20, 30, 42); Cooling the material layer stack (5, 10, 20, 30, 42) to a predetermined temperature; after cooling the material layer stack, depositing a second part (44) of the AP1 layer on the first part (42) of the AP1 layer at a temperature below ambient temperature while the material layer stack is no longer actively cooled, wherein an initial deposition temperature for forming the second part of the AP1 layer is lower than the ambient temperature as the initial deposition temperature for forming the first part of the AP1 layer, thereby completing the RKKY-coupled pinned SAF layer structure; and Producing a tunnel barrier layer (50), a free ferromagnetic layer (60) and a capping layer (70) in the aforementioned order on the second part (44).