6680 results about "Antimony" patented technology

In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.

A high transmission and low iron glass is provided for use in a solar cell. The glass substrate may be patterned on at least one surface thereof. Antimony (Sb) is used in the glass to improve stability of the solar performance of the glass upon exposure to ultraviolet (UV) radiation and/or sunlight. The combination of low iron content, antimony, and/or the patterning of the glass substrate results in a substrate with high visible transmission and excellent light refracting characteristics.

A solar-control glass that has acceptable visible light transmission, absorbs near infrared wavelength light (NIR) and reflects midrange infrared light (low emissivity mid IR) along with a preselected color within the visible light spectrum for reflected light is provided. Also provided is a method of producing the improved, coated, solar-controlled glass. The improved glass has a solar energy (NIR) absorbing layer comprising tin oxide having a dopant such as antimony and a low emissivity control layer (low emissivity) capable of reflecting midrange infrared light and comprising tin oxide having fluorine and/or phosphorus dopant. A separate iridescence color suppressing layer as described in the prior art is generally not needed to achieve a neutral (colorless) appearance for the coated glass, however an iridescence suppressing layer or other layers may be combined with the two layer assemblage provided by the present invention. If desired, multiple solar control and/or multiple low emissivity layers can be utilized. The NIR layer and the low emissivity layer can be separate portions of a single tin oxide film since both layers are composed of doped tin oxide. A method of producing the coated solar control glass is also provided.

A solar-control glass that has acceptable visible light transmission, absorbs near infrared wavelength light (NIR) and reflects midrange infrared light (low emissivity mid IR) along with a preselected color within the visible light spectrum for reflected light is provided. Also provided is a method of producing the improved, coated, solar-controlled glass. The improved glass has a solar energy (NIR) absorbing layer comprising tin oxide having a dopant such as antimony and a low emissivity control layer (low emissivity) capable of reflecting midrange infrared light and comprising tin oxide having fluorine and/or phosphorus dopant. A separate iridescence color suppressing layer as described in the prior art is generally not needed to achieve a neutral (colorless) appearance for the coated glass, however an iridescence suppressing layer or other layers may be combined with the two layer assemblage provided by the present invention. If desired, multiple solar control and/or multiple low emissivity layers can be utilized. The NIR layer and the low emissivity layer can be separate portions of a single tin oxide film since both layers are composed of doped tin oxide. A method of producing the coated solar control glass is also provided.

A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.

A lead-acid battery comprising: at least one lead-based negative electrode; at least one lead dioxide-based positive electrode; at least one capacitor electrode; and electrolyte in contact with the electrodes; wherein a battery part is formed by the lead based negative electrode and the lead dioxide-based positive electrode; and an asymmetric capacitor part is formed by the capacitor electrode and one electrode selected from the lead based negative electrode and the lead-dioxide based positive electrode; and wherein all negative electrodes are connected to a negative busbar, and all positive electrodes are connected to a positive busbar. The capacitor electrode may be a capacitor negative electrode comprising carbon and an additive mixture selected from oxides, hydroxides or sulfates of lead, zinc, cadmium, silver and bismuth, or a capacitor negative electrode comprising carbon, red lead, antimony in oxide, hydroxide or sulfate form, and optionally other additives. The capacitor electrode may be used in asymmetric capacitors and batteries of other types.

Polymer blends are disclosed that comprise one or more unsaturated olefinic homopolymers or copolymers having at least one functionality capable of entering into condensation reactions; one or more polyamide homopolymers or copolymers; one or more polyethylene terephthalate homopolymers or copolymers obtained using a catalyst system comprising antimony atoms; and one or more transition metal atoms. The inventive blends are useful for packaging, and exhibit improved oxygen-scavenging activity and lower haze compared with blends made using polyethylene terephthalate polymers prepared with antimony catalyst and either the olefinic or the polyamide homopolymers or copolymers, individually.

An antimony precursor including antimony, nitrogen and silicon, a phase-change memory device using the same, and a method of making the phase-change memory device. The phase-change memory device may have a phase-change film of a Ge₂—Sb₂—Te₅ material including nitrogen and silicon.

A high transmission low iron glass includes antimony, has reduced total alkali content, and increased silica content, and is suitable for use in photovoltaic devices (e.g., solar cells) or the like. A method of making the glass is also provided. In certain example embodiments, the glass composition may be made on a pattern line with a highly positive batch redox.

Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.

Methods of fabricating a thin film. An example method includes forming a GeSbTe thin film on a surface of a substrate by chemically reacting a first precursor including germanium (Ge), a second precursor including antimony (Sb), and a third precursor including tellurium (Te) in a reaction chamber and processing the surface of the GeSbTe thin film with hydrogen plasma. Another example method includes injecting at least one precursor into a reactor chamber and depositing the at least one precursor onto a substrate within the reactor chamber using a chemical vapor deposition process so as to form the thin film.

Compositions of matter including articles derived from (a) from 5 to 99.99 wt % of a modified polybutylene terephthalate random copolymer that (1) is derived from polyethylene terephthalate and (2) contains a at least one residue derived from polyethylene terephthalate selected from the group consisting of antimony, germanium, diethylene glycol groups, isophthalic acid groups, cis isomer of cyclohexane dimethanol, trans isomer of cyclohexane dimethanol, sodium benzoate, alkali salts, napthalane dicarboxylic acids, 1,3-propane diols, cobalt, cobalt-containing compounds, and combinations thereof, and (b) from 0.01 to 95 wt. % of a member selected from the group consisting of (1) fillers, (2) a carboxy reactive component, (3) polyethyelene terephthalate, (4) a component including a polycarbonate and an impact modifier. The articles may be derived from various conversion processes, e.g., injection molding processes, extrusion processes, thermoforming processes, melt-blown process.

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.

A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower.

Particulate skeletal iron catalyst is provided which contain at least about 50 wt. % iron with the remainder being a minor portion of a suitable non-ferrous metal and having characteristics of 0.062-1.0 mm particle size, 20-100 m2/g surface area, and 10-40 nm average pore diameter. Such skeletal iron catalysts are prepared and utilized for producing synthetic hydrocarbon products from CO and H2 feeds by Fischer-Tropsch synthesis process. Iron powder is mixed with non-ferrous powder selected from aluminum, antimony, silicon, tin or zinc powder to provide 20-80 wt. % iron content and melted together to form an iron alloy, then cooled to room temperature and pulverized to provide 0.1-10 mm iron alloy catalyst precursor particles. The iron alloy pulverized particles are treated with NaOH or KOH caustic solution at 30-95° C. temperature to extract and/or leach out most of the non-ferrous metal portion, and then screened and treated by drying and reducing with hydrogen and to provide the smaller size skeletal iron catalyst material. Such skeletal iron catalyst is utilized with CO+H2 feedstream for Fischer-Tropsch reactions in either a fixed bed or slurry bed type reactor at 180-350° C. temperature, 0.5-3.0 mPa pressure and gas hourly space velocity of 0.5-3.0 L/g Fe/hr to produce desired hydrocarbon products.

To provide a near-IR absorption compound free from antimony or arsenic and excellent in stability, especially, in heat resistance, light fastness, and moisture-and-heat resistance and also an IR absorption filter, an optical information recording medium, and a resin composition excellent in durability by using the near-IR absorption compound.

The near-IR absorption compound is a diimmonium compound having the following structure and the resin composition contains the diimmonium compound:

(wherein R₁ to R₈ independently denote hydrogen atom or an optionally substituted aliphatic hydrocarbon group; R₉ and R₁₀ independently denote an aliphatic hydrocarbon group optionally containing a halogen atom; and rings A and B may further have substituent groups.).

The present invention is a method for efficiently incorporating a UV absorber into a polyester resin. The method includes forming a reaction mixture comprising a diol component, a diacid component selected from the group consisting of dicarboxylic acids, dicarboxylic acid derivatives, and mixtures thereof, an antimony containing compound, a phosphorus containing compound, a metal containing compound, and a UV absorber. The reaction mixture is polymerized in a polycondensation reaction system. In another embodiment of the present invention, the UV absorber is added while the reaction products from one reactor are transferred to the next reactor in the polycondensation reaction system. A polyester composition having the UV absorber incorporated therein is also disclosed.

A fiber blend, a yarn spun from the fiber blend, and a fabric made from the yarn, wherein the fiber blend comprises: (a) about 40 wt.% to about 65 wt.% modacrylic fibers containing antimony, or FR acrylic fibers; (b) about 10 wt.% to about 50 wt.% cotton fibers or FR cotton fibers; (c) up to about 25 wt.% nylon fibers; and (d) greater than about 3 wt.% and less than 10 wt.% para-aramid fibers. The fabric is over 90 percent dyeable and is capable of achieving ASTM F1506 certification with an Arc Thermal Performance Value greater than 8.0 cal/cm². The fabric is woven or knitted, and has a weight of about 4.0 oz./yd.² to about 10.5 oz./yd.². The fabric is suitable for garments worn during activities in which there is potential for exposure to flame and/or electrical arc.

Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)₂}₂Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.

An inorganic material that consists of at least two elementary spherical particles, each of said spherical particles comprising metal nanoparticles that are between 1 and 300 nm in size and a mesostructured matrix with an oxide base of at least one element X that is selected from the group that consists of aluminum, titanium, tungsten, zirconium, gallium, germanium, tin, antimony, lead, vanadium, iron, manganese, hafnium, niobium, tantalum, yttrium, cerium, gadolinium, europium and neodymium is described, whereby said matrix has a pore size of between 1.5 and 30 nm and has amorphous walls with a thickness of between 1 and 30 nm, said elementary spherical particles having a maximum diameter of 10 μm. Said material can also contain zeolitic nanocrystals that are trapped within said mesostructured matrix.

To provide a grain oriented ceramic capable of exerting excellent piezoelectric properties, a production method thereof, and a piezoelectric material, a dielectric material, a thermoelectric conversion element and an ion conducting element each using the grain oriented ceramic, there is provided a grain oriented ceramic comprising, as the main phase, an isotropic perovskite-type compound which is represented by formula (1): {Li_x(K_1−yNa_y)_1−x}(Nb_1−z−wTa_zSb_w)O₃ in which x, y, z and w are in respective composition ranges of 0≦x≦0.2, 0≦y≦1, 0≦z≦0.4, 0≦w≦0.2 and x+z+w>0. The main phase comprises a polycrystalline body containing from 0.0001 to 0.15 mol of any one or more additional element selected from metal elements, semimetal elements, transition metal elements, noble metal elements and alkaline earth metal elements belonging to Groups 2 to 15 of the Periodic Table, per mol of the compound represented by formula (1). A specific crystal plane of each crystal grain constituting said polycrystalline body is oriented.