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34 results about "Iron platinum" patented technology

Iron–platinum nanoparticles (FePt NPs) are 3D superlattices composed of an approximately equal atomic ratio of Fe and Pt. Under standard conditions, FePt NPs exist in the face centered cubic phase but can change to a chemically ordered face centered tetragonal phase as a result of thermal annealing.

Method for preparing hard magnetism iron platinum (FePt) nanometer-particles by using inorganic salt as precursor

The invention discloses a method for preparing hard magnetism iron platinum (FePt) nanometer-particles by using inorganic salt as a precursor and relates to the method for preparing the hard magnetism FePt nanometer-particles. According to the method for preparing the hard magnetism FePt nanometer-particles, the present technical problems of the complex preparation process, high energy consumption, irregular morphology of the nanometer particles and uncontrollable sizes of hard magnetism L10- FePt nanometer-particles obtained by using the surface coating method to conduct high-temperature annealing or a salt bath method are resolved. The method includes the following steps that 1, mixing and stirring are conducted under the shielding gas; 2, heating is conducted; 3, cooling is conducted; and 4, washing and drying are conducted. An easy liquid phrase thermal synthesis method is adopted; oleylamine is used as a solvent, a surfactant and a reducing agent; then, high-temperature thermal reduction of ferrous chloride and potassium chloroplatinate is conducted under a nitrogen atmosphere; the hard magnetism L10- FePt nanometer-particles with excellent magnetic performance is obtained through one step of preparation; and the magnetic performance, morphology and sizes of a product are adjusted further by adjusting the heating rate and the reaction time.
Owner:HARBIN INST OF TECH

Method for preparing FePt pseudo-spin-valve material

The invention provides a method for preparing an FePt pseudo-spin-valve material, and belongs to the field of magnetic materials or spintronics materials. According to the method, prestretching treatment, surface acidification descaling treatment and surface polishing treatment are carried out on a copper-zinc-aluminum Cu-Zn-Al memory alloy substrate; a thin film material is deposited on the Cu-Zn-Al substrate; the structure of the thin film material is iron-platinum FePt/ruthenium Ru/iron-platinum FePt/tantalum Ta; thermal treatment is carried out in a vacuum environment after deposition is completed to induce ordered arrangement of atoms of two FePt layers to form hard magnetic property; and finally, lithographic processing is carried out on a thin film system to obtain a nano columnar array structure and an electrode is led out. Switching of a high resistance state and a high resistance state, namely a pseudo-spin-valve function is achieved by controlling a temperature and controlling a stress state of the thin film system. The method has the characteristics of being simple in preparation and convenient to control; and a high-cost rare metal or an expensive additional device is not needed, so that the method has the advantages of high efficiency, low cost and the like, and is suitable for being applied to a spintronics technology in the future.
Owner:UNIV OF SCI & TECH BEIJING

Vertical orientation strong magnetic dielectric film and preparation method thereof

The invention relates to a strong magnetic dielectric film, and in particular relates to a vertical orientation strong magnetic dielectric film and a preparation method thereof. The technical scheme is as follows: the vertical orientation strong magnetic dielectric film comprises a substrate, a buffer layer, a vertical orientation strong magnetic dielectric protective layer and a protective layer sequentially stacked, wherein the substrate is a single crystal, polycrystal or amorphous base plate; the buffering layer is made of inorganic nonmetal nitride ceramic with a hexagonal crystal structure; the vertical orientation strong magnetic dielectric protective layer is a samarium-cobalt diaphragm, an aluminum-nickel-cobalt diaphragm, an iron-platinum diaphragm, an iron-palladium nitride, a cobalt-platinum diaphragm or a cobalt-palladium diaphragm; the protective layer is made of transition metal, nitride diaphragm material or oxide diaphragm material. The vertical orientation strong magnetic dielectric film and the preparation method thereof provided by the invention have the advantages of being small in volume, vertical in magnetization direction, small in size of grains serving as a storage unit, large in coercivity and high in stability, and is simple in production technology and wider in application range.
Owner:NORTHEASTERN UNIV

Self-assembly magnetic memorizer and forming method thereof

ActiveCN103456319AReduce coupling effectHigh magnetic anisotropy constantNanomagnetismNanoinformaticsDot matrixMagnetic storage
The invention provides a self-assembly magnetic memorizer which comprises a memorizer body. The memorizer body comprises a disc-shaped hard disk substrate, a plurality of annular rail grooves are formed in the hard disk substrate by taking the circle center of the hard disk substrate as the center, a silicon dioxide nanosphere array is arranged in the rail grooves, the surfaces, in contact with the air, of silicon dioxide nanospheres are provided with iron platinum thin films, and an iron platinum dot matrix is formed. A forming method of the self-assembly magnetic memorizer comprises the steps that the annular rail grooves are etched in the hard disk substrate with the photoetching technique; the silicon dioxide nanosphere array is prepared in the rail grooves in a nanometer self-assembly micromachining way; the iron platinum thin films are grown on the silicon dioxide nanospheres, and the regular iron platinum dot matrix is formed. The self-assembly magnetic memorizer lowers the coupling effect of magnetic domains to the maximum degree, meets the requirement for high magnetic recording density, and has environmental stability at the same time. The forming method of the self-assembly magnetic memorizer overcomes physical defects of traditional continuous magnetic storage media.
Owner:南通环安智能科技有限公司

Method for directly driving ordering of atoms of magnetic recording medium film by current

The invention relates to a method for directly driving ordering of atoms of a magnetic recording medium film by current, belonging to the technical field of high-density magnetic recording media material. The method of the invention comprises the following steps: sequentially depositing iron platinum FePt atoms and tantalum Ta atoms the thickness of which is in a range of 50-500 angstrom on a glass substrate by a magnetron sputtering method, wherein the background vacuum degree is 1*10<-5>-7*10<-5>Pa, the pressure of argon gas (99.99%) when sputtering is 0.4-1.2Pa, and the temperature of the substrate is 20-800 DEG C; after deposition, cooling the film to the room temperature, leading out Cu electrodes from the two ends of the film and connecting with a constant current source; and putting a sample into a vacuum furnace, and when the vacuum degree in the furnace is 2*10<-5>-7*10<-5>Pa, conducting current at the two ends of the film, wherein the current size is 50mA-1000mA, and the conduction time is 5s-300s. In the invention, the Fe atoms and the Pt atoms are driven to move in order by the heat generated by the resistance of the film, thereby greatly reducing heat loss in the traditional annealing process, and improving the effective utilization ratio of heat; and the invention has simple structure and low cost and is suitable for production in the future.
Owner:UNIV OF SCI & TECH BEIJING

A method for preparing fept pseudo-spin valve material

The invention provides a method for preparing an FePt pseudo-spin-valve material, and belongs to the field of magnetic materials or spintronics materials. According to the method, prestretching treatment, surface acidification descaling treatment and surface polishing treatment are carried out on a copper-zinc-aluminum Cu-Zn-Al memory alloy substrate; a thin film material is deposited on the Cu-Zn-Al substrate; the structure of the thin film material is iron-platinum FePt / ruthenium Ru / iron-platinum FePt / tantalum Ta; thermal treatment is carried out in a vacuum environment after deposition is completed to induce ordered arrangement of atoms of two FePt layers to form hard magnetic property; and finally, lithographic processing is carried out on a thin film system to obtain a nano columnar array structure and an electrode is led out. Switching of a high resistance state and a high resistance state, namely a pseudo-spin-valve function is achieved by controlling a temperature and controlling a stress state of the thin film system. The method has the characteristics of being simple in preparation and convenient to control; and a high-cost rare metal or an expensive additional device is not needed, so that the method has the advantages of high efficiency, low cost and the like, and is suitable for being applied to a spintronics technology in the future.
Owner:UNIV OF SCI & TECH BEIJING

A method for preparing hard magnetic iron-platinum nanoparticles using inorganic salts as precursors

The invention discloses a method for preparing hard magnetism iron platinum (FePt) nanometer-particles by using inorganic salt as a precursor and relates to the method for preparing the hard magnetism FePt nanometer-particles. According to the method for preparing the hard magnetism FePt nanometer-particles, the present technical problems of the complex preparation process, high energy consumption, irregular morphology of the nanometer particles and uncontrollable sizes of hard magnetism L10- FePt nanometer-particles obtained by using the surface coating method to conduct high-temperature annealing or a salt bath method are resolved. The method includes the following steps that 1, mixing and stirring are conducted under the shielding gas; 2, heating is conducted; 3, cooling is conducted; and 4, washing and drying are conducted. An easy liquid phrase thermal synthesis method is adopted; oleylamine is used as a solvent, a surfactant and a reducing agent; then, high-temperature thermal reduction of ferrous chloride and potassium chloroplatinate is conducted under a nitrogen atmosphere; the hard magnetism L10- FePt nanometer-particles with excellent magnetic performance is obtained through one step of preparation; and the magnetic performance, morphology and sizes of a product are adjusted further by adjusting the heating rate and the reaction time.
Owner:HARBIN INST OF TECH

Self-assembly magnetic memorizer and forming method thereof

ActiveCN103456319BReduce coupling effectHigh magnetic anisotropy constantNanomagnetismNanoinformaticsDot matrixMagnetic storage
The invention provides a self-assembly magnetic memorizer which comprises a memorizer body. The memorizer body comprises a disc-shaped hard disk substrate, a plurality of annular rail grooves are formed in the hard disk substrate by taking the circle center of the hard disk substrate as the center, a silicon dioxide nanosphere array is arranged in the rail grooves, the surfaces, in contact with the air, of silicon dioxide nanospheres are provided with iron platinum thin films, and an iron platinum dot matrix is formed. A forming method of the self-assembly magnetic memorizer comprises the steps that the annular rail grooves are etched in the hard disk substrate with the photoetching technique; the silicon dioxide nanosphere array is prepared in the rail grooves in a nanometer self-assembly micromachining way; the iron platinum thin films are grown on the silicon dioxide nanospheres, and the regular iron platinum dot matrix is formed. The self-assembly magnetic memorizer lowers the coupling effect of magnetic domains to the maximum degree, meets the requirement for high magnetic recording density, and has environmental stability at the same time. The forming method of the self-assembly magnetic memorizer overcomes physical defects of traditional continuous magnetic storage media.
Owner:南通环安智能科技有限公司
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