4306 results about "Film material" patented technology

Apparatus and process for etching semiconductor wafers and the like in which a substrate is supported by a pedestal within a chamber, and at least one gas capable of etching the substrate or a film material on the substrate is introduced into the chamber through a segmented gas injection element which is separated from the substrate by a distance approximately less than its size from which the distribution of the flow or mixture of gas can be altered spatially proximate to the substrate in a controlled and variable way, for each wafer or substrate if desired, by having a varying amount or mixture of gas flow to some or all of the segments such as to cause the etching rate distribution to vary across the substrate.

A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.

A series of noble metal organometallic complexes of the general formula (I): ML_aX_b(FBC)_c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO₂, OsO₂ and RuO₂.

A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device is formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to its corresponding plurality of elongated emissive channels.

A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time. The net effect of spatial coordination and time synchronization of material streams is a plasma whose distribution of species is optimized for the deposition of a thin film photovoltaic material at high deposition rates. Delivery devices include nozzles and remote plasma sources.

The present invention provides a method of forming a patterned thin film on a surface of a substrate having thereon a patterned underlayer of a self-assembled monolayer. The method comprises depositing a thin film material on the self-assembled monolayer to produce a patterned thin film on the surface of the substrate. The present invention further provides processes for preparing the self-assembled monolayer. The present invention still further provides solution-based deposition processes, such as spin-coating and immersion-coating, to deposit a thin film material on the self-assembled monolayer to produce a patterned thin film on the surface of the substrate.

The invention relates to a graphene-organic material layered assembly film and a preparation method thereof. The preparation method comprises: using a graphene material and an organic material as raw materials, utilizing interaction of static electricity, hydrogen bonds, coordinate bonds or charge transfer and the like between the graphene and the organic material, and superposing films layer by layer through the film preparation methods such as spin coating, spraying, dipping, lifting and pulling and the like to prepare the film, wherein the thickness of each layer of the film can be controlled between 10 nanometers and 2 millimeters according to requirement. The layered assembly film and the preparation method have the characteristics that multilayer film materials with different functions are prepared by utilizing unique electric, magnetic, mechanical and chemical properties of the grapheme, and can be used as biomaterials, conductive materials, electromagnetic shielding and wave absorbing materials, photovoltaic materials, electrode materials, film filtering and separating materials, and the like to be applied to chemistry and chemical industry, biology and precision instruments, and manufacture of micro electrons, machinery and aviation and aerospace devices according to the selected different organic materials.

The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer 11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source 12, a drain 13, a gate 14 and a gate insulating layer 15 are formed on the channel layer 111 to form an FET. For a substrate 16, a proper material is selected depending on a thin film material of the channel layer 11 in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO₄ or the like can be used for the substrate 16.

A processing method herein enables patterning a thin-film photovoltaic module into cells and/or sub-cells using an etch process. According to one aspect, an etch mixture is identified that is capable etching through a thin-film material such as CIGS with high selectivity to both photoresist and underlying layers such as metal. According to another aspect, the etch process enables patterning a photovoltaic device using lithographic techniques. Among other things, the invention enables forming interconnect structures with feature sizes that are substantially smaller than is possible with prior art techniques, and avoids many of the problems associated with laser and mechanical scribes, thus resulting in better and more efficient photovoltaic modules.

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

The present invention provides a distribution manifold for thin-film material deposition onto a substrate comprising a plurality of inlet ports for a sequence of gaseous materials, an output face comprising a plurality of open elongated output channels, each channel extending in a length direction substantially in parallel. The distribution manifold can be employed in a deposition system for thin film deposition, further comprising a plurality of sources for a plurality of gaseous materials and a support for positioning a substrate in pre-designed close proximity to the output face of the distribution manifold. During operation of the system, relative movement between the output face and the substrate support is accomplished.

The invention is directed to a photochromic material that filters, from solar radiation, near infrared radiation and sufficient portions of ultraviolet radiation while transmitting actinic radiation in the wavelength range of about 341±5 nm. The light-transmitting photochromic material provides light and heat stability to achieve a longer useful life. This photochromic material is preferably incorporated in a multilayered structure with constituents provided on or contained within one or more layers to enhance the resistance to light fatigue.

Disclosed is a plasma etching chamber for completely dry-cleaning a film material and particles deposited at the periphery of a wafer through plasma etching while generating plasma at the top to the bottom sides of the periphery of the wafer. A pair of top and bottom anodes facing each other is placed around the periphery of the wafer under the application of radio frequency through a cathode. Alternatively, a top cathode and a bottom anode are placed around the periphery of the wafer while facing each other and a view-ring shields the area of the cathode, the anode and the wafer from the outside. A plasma etching system includes a plurality of the above-structured etching chambers. A handler takes wafers from a plurality of cassette stands or load ports, and posture-corrects the orientation frat locations of the wafers by a wafer alignment unit. The wafers are charged into the plasma etching chambers directly or via load lock chambers. The handler takes the etched wafers from the chambers, and returns the wafers to the cassettes or the load ports directly or via the load lock chambers.

The invention discloses a method to manufacture polytetrafluoroethylene film material used for air degerming. The invention mixes polytetrafluoroethylene resin powder and liquid lubricant, and is gained after extruding, rolling, longitudinal stretching, lateral stretching and hot shaping. It is simple technology and low cost. It could be used for air degerming and has great social and economic benefits.

An electron beam drawing mask includes a pattern supporting film for transmitting an electron beam therethrough; an electron beam scattering body pattern formed over the pattern supporting film; and a support member for supporting the pattern supporting film and the electron beam scattering body pattern. The pattern supporting film has a film thickness of 0.005 to 0.2 micron, a film material density of 1.0 to 5.0 g/cm<3 >and an elastic modulus of 0.8x10<11 >Pa or higher. The electron beam scattering body pattern has a film thickness of 0.2 to 2 micron, a film material density of 1.0 to 5.0 g/cm<3>, and an elastic modulus of 0.8x10<11 >Pa or higher.

A new method for repairing pattern defect on a photo mask is provided. The method includes the steps of: (a) determining the irradiation area of the focused ion beam (FIB) directed towards a defect, by narrowing the irradiation area by a predetermined distance inwardly from the edge of the defect; (b) focusing the FIB onto its irradiation area to remove a part of the pattern film material of the defect from its top surface and thus leave a thin layer on a mask substrate; and (c) removing the thin layer by using a laser beam. The defect may be an isolated pattern or a pattern extended continuously from an edge of the normal pattern. Further, the photo mask repaired by the method, and a manufacturing method of semiconductor devices employing the repaired photo mask are proposed. The photo mask may include a phase shift mask.

The invention relates to a combination of electrostatic spinning and electrostatic spraying for preparing a nanofibre base composite separation membrane, comprising: dissolving functional polymer film material in solvent; preparing into polymer spinning solution A for electrostatic spinning, and obtaining non-woven fabrics to serve as the support layer of a composite membrane; dissolving another functional polymer film material in the solvent; preparing into polymer spinning solution B, and spraying the polymer spinning solution B on the surface of the non-woven fabrics by electrostatic spraying to serve as the selecting layer of the composite membrane; carrying out heat treatment or chemical treatment on the above product; and preparing the nanofibre base composite separation membrane. The preparation method provided by the invention is simple and easy to realize, can conveniently and accurately control the thickness and the evenness of the surface selecting layer, and is easy to realize the operation of large-scale production; the prepared nanofibre base composite separation membrane can be widely applied in the fields of microfiltration, ultrafiltration, reverse osmosis and the like.

A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

A method of fabricating an apparatus for an enhanced imaging sensor consisting of pixellated micro columnar scintillation film material for x-ray imaging comprising a scintillation substrate and a micro columnar scintillation film material in contact with the scintillation substrate. The micro columnar scintillation film material is formed from a doped scintillator material. According to the invention, the micro columnar scintillation film material is subdivided into arrays of optically independent pixels having interpixel gaps between the optically independent pixels. These optically independent pixels channel detectable light to a detector element thereby reducing optical crosstalk between the pixels providing for an X-ray converter capable of increasing efficiency without the associated loss of spatial resolution. The interpixel gaps are further filled with a dielectric and or reflective material to substantially reduce optical crosstalk and enhance light collection efficiency.

The invention discloses a molybdenum disulfide (MoS2) nano-sheet film material and its preparation methods. The film material is characterized in that MoS2 nano-sheets vertically and sequentially grow on a conductive substrate, and the diameters and the thicknesses of the MoS2 nano-sheets are 0.05-2mum and 2-30nm respectively. There are two preparation methods of the film material. One preparation method comprises the following steps: a substrate which can be a copper sheet, a silver sheet, a titanium sheet, a tungsten sheet, a molybdenum sheet or carbon is placed in a solution comprising a molybdate and sulfur-containing compounds (comprising thiourea, thioacetamide and L-cysteine); and the sulfur-containing compounds undergo a hydrothermal reaction to grow the compactly-grown and uniformly-sequential MoS2 nano-sheet films on the substrate. Another method comprises the following steps: the molybdenum sheet is directly placed in a solution of the sulfur-containing compounds (comprising thiourea, thioacetamide and L-cysteine); and the sulfur-containing compounds undergo a sulfuration reaction under a hydrothermal condition to form the compact and uniform MoS2 nano-sheet ordered films. The film has a low hydrogen evolution overpotential (-30mv), a small Tafel slope (52mV/dec) and a high electrochemical stability, and is a hydrogen evolution electrode material extremely having an application prospect.

An aspect of the present invention is a method for forming a plurality of thin-film devices. The method includes coarsely patterning at least one thin-film material on a flexible substrate and forming a plurality of thin-film elements on the flexible substrate with a self-aligned imprint lithography (SAIL) process.

The invention discloses an efficiency oil and water separation composition fiber film and a preparation method thereof, and belongs to the field of functional nanometer fiber materials. Hydrophobic polymers such as polyurethane, polystyrene and polymethyl methacrylate or polycaprolactone are used as the main raw materials of the fiber film, the main raw materials are dissolved in an organic solvent to form a polymer solution, hydrophobic nanometer particles are added into the polymer solution in the preparation process, after the mixture is evenly mixed, electro-spinning is conducted on the mixed solution by means of the electrostatic spinning method, and then a fiber film material which is formed by micro-nanometer composite structures and is in the shape of non-woven fabric is obtained. The electro-spun fiber film of the micro-nanometer structure has super-hydrophobic/super-oleophylic property in the air and excellent oil adsorption performance, and the contact angle to oil is nearly zero. The efficient oil and water separation composite fiber film is simple in preparation method, low in energy consumption, high in efficiency, high in oil and water separation speed, and capable of being widely used in the fields such as oily water efficient purification.

The utility model relates to a material thermal conductivity measuring method of double heat-flux meter steady-state method, belonging to the technical field of material heat conduction performance testing. Based on the analysis of one-dimensional heat conduction in multilayer flat plate, the utility model proposes the adoption of the method of double heat-flux meter and samples with different thickness for heat conduction measurement, and gives quantitative criterion of one-dimensional heat conduction. The utility model adopts multi-point temperature measurement in heat-flux meter, calculates the average heat flux density with one-dimensional heat conduction formula of multi-layer flat plate, overcomes the difficulty of inaccurate heat flux density measurement, and makes alignment-fitting calculation for the actual thermal conductivity coefficient and the interface thermal resistance with test data of samples with different thickness. In addition, the utility model can test not only the thermal conductivity of solid material, but also the thermal conductivity coefficient of film material.

The present invention is nanometer multilayer metal carbide/diamond-like film material and its preparation process. The nanometer multilayer film material includes one base material layer, one transition layer and one nanometer multilayer film layer arranged successively. The transition layer consists of one metal layer, one metal nitride layer and one metal carbonitride layer; and the nanometer multilayer film layer consists of metal carbide layers and diamond-like film layers arranged alternately. The preparation process includes: bombarding with Ti, Cr, and Zr or W targets successively to clean the base material; depositing one metal layer, one metal nitride layer and one metal carbonitride layer successively; and depositing metal carbide layers and diamond-like film layers alternately. The nanometer multilayer film material has high micro hardness, low friction coefficient and high adhesion, and may be applied in improving the surface performance of metal parts.

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

The invention relates to a material mechanical property in-situ testing system and method in a dynamic and static load spectrum, and belongs to the field of mechanical tests. The system integrates the following functions: a static testing function of biaxial drawing and shearing in an orthogonal plane, a shearing static testing function, a double shaft pull-pull mode fatigue testing function, and a static/dynamic press testing function. A complicated static/dynamic load spectrum can be established. Multi-mode composite load mechanical property evaluation can be performed on a film material or a block material, for example: high-cycle fatigue tests based on double-shaft pre-stretching load and impact press tests based on double-shaft stretching-shearing pre-load. At the same time, special defects are pre-fabricated on the central area and cross shaped arm area of a test piece; the analysis functions of a variable-zoom optical imaging system or a digital speckle strain analysis system can be utilized; the provided system and method can also be used to research the deformation behavior and cracking expansion rules of micro defects in a component under a multi-dimensional stress, and an evaluation tool is provided for performance degradation rules of products and optimized preparation method of materials.

An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.

It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.

The present invention provides an antireflective film material comprising a polymer (A) comprising copolymerized repeating units expressed by the Formula (1) and/or the Formula (2), an organic solvent (B), an acid generator (C) and an optional crosslinking agent (D)

Metal foils, wires, and seamless tubes with increased mechanical strength are provided. As opposed to wrought materials that are made of a single metal or alloy, these materials are made of two or more layers forming a laminate structure. Laminate structures are known to increase mechanical strength of sheet materials such as wood and paper products and are used in the area of thin films to increase film hardness, as well as toughness. Laminate metal foils have not been used or developed because the standard metal forming technologies, such as rolling and extrusion, for example, do not lend themselves to the production of laminate structures. Vacuum deposition technologies can be developed to yield laminate metal structures with improved mechanical properties. In addition, laminate structures can be designed to provide special qualities by including layers that have special properties such as superelasticity, shape memory, radio-opacity, corrosion resistance etc. Examples of articles which may be made by the inventive laminate structures include implantable medical devices that are fabricated from the laminated deposited films and which present a blood or body fluid and tissue contact surface that has controlled heterogeneities in material constitution. An endoluminal stent-graft and web-stent that is made of a laminated film material deposited and etched into regions of structural members and web regions subtending interstitial regions between the structural members. An endoluminal graft is also provided which is made of a biocompatible metal or metal-like material. The endoluminal stent-graft is characterized by having controlled heterogeneities in the stent material along the blood flow surface of the stent and the method of fabricating the stent using vacuum deposition methods.