161 results about "Vacuum deposition" patented technology

A continuous-wave perovskite polariton laser device, including an optical microcavity, a spacer layer, and a gain medium. The gain medium is a perovskite material or a composite material containing perovskite, in a form of thin film, microcrystal, phosphor, nanocrystal, quantum dot, or single crystal. The perovskite gain medium is prepared by solution process or vacuum deposition technique, and is combined with an optical resonator. By exploiting the strong interaction between excitons and photons, a steady-state exciton-polariton condensation is formed, enabling the generation of continuous-wave polariton laser emission with a low threshold. The laser device can achieve low-threshold continuous-wave or pulsed lasing emission at room temperature under various light sources pumping or electrical excitation. Its threshold is 1 to 3 orders of magnitude lower than that of conventional semiconductor lasers, with an optimized threshold as low as 0.1 to 1 W / cm2, representing a novel ultralow-power coherent light source technology.

A device for vacuum deposition systems, comprising: a movable main body, at least one deposition source mounted on the movable main body, at least one coating window associated with the at least one deposition source and mounted on the movable main body, and at least one cooling device connected to the at least one coating window and mounted on the movable main body.

The invention relates to the technical field of coatings, in particular to a PVD (Physical Vapor Deposition) coating process method applied to a galvanized sheet stamping die, which comprises the following steps of: pretreating the die, cleaning the surface of the die by a wet process, placing the die in a vacuum deposition cavity, vacuumizing, and heating to a preset temperature in an inert gas environment; plasma pretreatment is conducted on the surface of the mold, a high-power pulse magnetron sputtering cathode of a chromium target is selected to discharge in the argon working environment to generate plasma rich in chromium ions, and negative bias voltage is applied to the mold; starting at least one unbalanced magnetron sputtering cathode, gradually increasing the target current by the unbalanced magnetron sputtering cathode in a current ramp-up mode so as to improve the target voltage, and synchronously introducing nitrogen as a reaction gas, so that a nitride transition layer is deposited on the surface of the mold; and a high-power pulse magnetron sputtering cathode and an unbalanced magnetron sputtering cathode synchronously work on the transition layer to carry out multi-source reactive sputtering deposition, so that a multi-layer hard coating formed by alternating titanium aluminum vanadium and chromium nitride is formed. By combining the high-power pulse magnetron sputtering technology and the unbalanced magnetron sputtering technology, the problems that in the prior art, a coating is poor in adhesive force and insufficient in high temperature resistance are solved.

The invention relates to a cooled manipulator (10) for an ultra-high vacuum process device of a structure comprising one or more layers. According to the invention, the cooled manipulator for an ultra-high vacuum process device comprises: - a cooling device (12) comprising a solid material, - a rotating support (14) integral with the cooling device, - a reservoir (16) supplied by a circulation of a cryogenic fluid, configured to be moved between two positions (P1) and (P2), the first in which the reservoir is in contact with the cooling device, the second in which the reservoir is not in contact with the cooling device. Figure for the abstract: Fig. 1.

The invention relates to a preparation method of a composite film with a low resistance temperature coefficient, which belongs to the technical field of surface functional film materials, and comprises the following steps: placing a substrate in a vacuum deposition chamber, vacuumizing the vacuum deposition chamber until the vacuum deposition chamber is less than or equal to 5 * 10 <-3 > Pa, filling argon, adjusting the working air pressure to 0.2-0.8 Pa, and keeping the temperature for 2-3 hours; a metal target material with a positive resistance temperature coefficient and a conductive ceramic target material with a negative resistance temperature coefficient are used for co-sputtering coating on a substrate, and the low-resistance temperature coefficient composite film is obtained. According to the invention, co-sputtering is carried out on a metal material and a conductive ceramic material with a negative resistance temperature coefficient by utilizing a positive resistance temperature coefficient, and a thin film sample with low TCR performance requirements is obtained by regulating and controlling the power ratio of the metal material and the conductive ceramic material, and the repeatability of the sample is relatively good.

The invention discloses champagne rhinestones and a vacuum coating color changing method, and belongs to the technical field of rhinestones. The method comprises the steps that S101, a template is transferred, wherein rhinestones are transferred to the template; s102, bias plasma cleaning is conducted, specifically, the template is transferred to a coating chamber, vacuumizing and heating are conducted, and then bias plasma cleaning is conducted; s103, aluminum oxide layer plating: after vacuum cleaning, an aluminum oxide target material is adopted for vacuum coating to form an aluminum oxide layer, and the coating conditions are as follows: the current is 50-70 A, the time is 100-130 S, and the vacuum degree is 5.0-7.0 * 10 <-1 > Pa; in the step S104, oxygen is introduced, ferrochrome is adopted for vacuum coating to form the ferrochrome layer, and the coating conditions are that the current ranges from 50 A to 70 A, the time ranges from 220 S to 270 S, and the vacuum degree ranges from 7.5 * 10 <-1 > Pa to 9.0 * 10 <-1 > Pa; and S105, discharging is conducted, specifically, after cooling is conducted, air is introduced, and then the template is taken out of the coating chamber.

The invention discloses a zinc selenide leftover material regeneration method and system and a high-purity zinc selenide evaporation material, and relates to the technical field of semiconductor material cyclic regeneration. The zinc selenide leftover material regeneration method sequentially comprises a pretreatment step, a low-temperature devolatilization step, a medium-temperature impurity removal step, an ultrafine crushing step and a vacuum directional sublimation purification step, and the low-temperature devolatilization step is characterized in that the zinc selenide leftover material is heated to a first preset temperature under a dynamic vacuum condition to remove free selenium and elemental zinc impurities; in the medium-temperature impurity removal step, the zinc selenide leftover materials are heated to a second preset temperature to promote lattice recombination of ZnO impurities, a double-temperature-zone vacuum deposition furnace is adopted in the vacuum directional sublimation purification step, the temperature of an evaporation zone is 1100-1150 DEG C, the temperature of a condensation zone is 400-450 DEG C, the steam transmission distance is smaller than 30 cm, and products in the condensation zone are collected. The technical scheme provided by the invention has the advantages of high recycling rate, high purity of the regenerated zinc selenide evaporation material, low energy consumption and high process safety.

This application discloses a selective absorption membrane, its preparation method, and its application, belonging to the field of solar thermal collection technology. The selective absorption membrane is prepared by anodic etching of copper foil in sodium hydroxide, sodium citrate, and copper sulfate. Compared with vacuum deposition, this preparation method uses readily available raw materials, is simple to operate, and is low in cost. Furthermore, the prepared selective absorption membrane exhibits higher absorptivity in the short-wavelength region, which is beneficial for improving photothermal conversion efficiency. When used in the preparation of solar thermal collectors, it can quickly and efficiently convert solar energy into thermal energy. Photothermal biochar prepared from anaerobic fermentation sludge exhibits excellent adsorption performance. Its application in wastewater treatment forms a closed-loop process of "carbon source capture – anaerobic fermentation – photothermal carbonization," significantly improving the biogas yield and organic matter degradation efficiency of the anaerobic fermentation system.

The invention discloses an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic materials. A preparation method of an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation comprises the following steps: depositing an Se-doped film on the surface of a silicon substrate by adopting a vacuum deposition process, and then preparing black silicon with a micro-nano composite structure through picosecond laser scanning; and performing sulfur ion implantation modification on the black silicon with the micro-nano composite structure, and annealing to prepare the S and Se co-doped silicon-based near-infrared photosensitive material. Through a picosecond laser-ion implantation composite doping process, the problems of thermal damage and lattice defects in a traditional doping method are successfully solved, and preparation of the S and Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defects is realized. The light absorptivity of the material at the wave band of 1300nm is remarkably improved, a process scheme capable of realizing mass production is provided for third-generation photovoltaic devices and high-performance infrared detectors, and the material has important application value and wide market prospects.

The application discloses a kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation and preparation method and application, belong to semiconductor optoelectronic material technical field;A kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation preparation method, comprising the following steps: using vacuum deposition process is deposited Se doped film on the surface of silicon substrate, then by picosecond laser scanning preparation obtains the micro-nano composite structure black silicon;Sulfur ion implantation modification is carried out to the micro-nano composite structure black silicon, annealing, and the S, Se co-doped silicon-based near-infrared photosensitive material is prepared.The application is successfully solved the problem of thermal damage and lattice defect in traditional doping method by the composite doping process of picosecond laser-ion implantation, realizes the preparation of S, Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defect.The light absorption rate of the material at 1300nm band is significantly improved, which provides a mass production process scheme for the third generation photovoltaic device and high-performance infrared detector, and has important application value and broad market prospect.

A packaging layer arrangement (110) for manufacturing a packaging container comprises: - a paper layer (112) as a carrier layer, - an oxygen barrier layer (120) such that the oxygen transfer rate of the packaging layer arrangement (110) does not exceed 1.1 cm³ / (m²·d·bar) according to DIN 53380-3, measured at 23 °C and 50% relative humidity, - a metallization barrier layer arrangement (122) formed by vacuum deposition, wherein the packaging layer arrangement (110) additionally comprises a water vapor barrier layer (118) such that the water vapor transfer rate of the packaging layer arrangement (110) does not exceed 1.1 g / (m²·d) according to DIN EN ISO 15106-3, measured at 38 °C and 90% relative humidity, wherein the oxygen barrier layer (120) is located in the layer sequence (LS) between the water vapor barrier layer (118) and the metallization barrier layer arrangement (122), wherein the packaging layer arrangement (110) has a cover layer (124),wherein the metallization barrier layer arrangement (122) is arranged between the paper layer (112) and the cover layer (124). The cover layer (110) is predominantly formed from a polyolefin blend or from a copolymer based on styrene and acrylic or from a thermoplastic elastomer.

A vacuum deposition facility for continuously depositing, on a running substrate, coatings formed from at least one metal inside a Vacuum deposition facility including a vacuum chamber, a coated substrate coated with at least one metal on both sides of the substrate and a coated metallic substrate.

The present invention provides: a lithium alloy for vacuum deposition, the lithium alloy comprising 23 wt% to 91 wt% (exclusive of 23 wt% and 91 wt%) of bismuth (Bi), with the balance being lithium (Li) and other inevitable impurities, and including at least a Li3Bi phase and a lithium phase; a method for manufacturing the lithium alloy for vacuum deposition; a method for manufacturing a lithium thin film for a photoelectric device; and a photoelectric device containing the lithium thin film produced thereby.

Provided is a vacuum deposition system that, without additional equipment, is capable of effectively suppressing adhesion of a splash onto a deposition object.　A vacuum deposition system ES comprises: a vapor deposition boat 3 that includes a boat body 31 having a storage part 31a of a vapor deposition material Em; a material supply unit 6 for supplying the wire-shaped vapor deposition material from above so as to abut a bottom plate of the boat body; a power source Ps for heating the boat body by supplying power; and a control unit Uc. The vacuum deposition system ES further comprises an ammeter Am for detecting current at the time of energization by the power source, the current changing together with the amount of molten metal when the vapor deposition material melts and is wet-spread in the storage part. The control unit obtains the average value of the current values detected by the ammeter Am per unit time, and changes the current value by controlling the power source on the basis of each of the average values successively obtained.

The application discloses a flexible bio-memristor and a preparation method thereof. The preparation method comprises the following steps: plugging the non-electrode area of a first filter membrane and a second filter membrane; filtering top electrode material solution by vacuum filtration to filter the top electrode material to the electrode area of the first filter membrane, and filtering bottom electrode material solution by vacuum filtration to filter the bottom electrode material to the electrode area of the second filter membrane; transferring the top electrode material on the first filter membrane to a first substrate film; coating a functional material on the bottom electrode of the bottom electrode layer to form an intermediate functional layer; and assembling the memristor. The method provided by the application is prepared based on a solution method, and has the advantages of simple process, low cost, and the core step of the whole process being performed at a relatively low temperature, so that high-temperature annealing, complex photolithography and vacuum deposition equipment required in traditional semiconductor processes are avoided, equipment investment, energy consumption and production cost are significantly reduced, and the method is especially suitable for large-scale production of flexible electronic devices.

The present invention discloses an erasable organic-inorganic hybrid patterned thin film prepared by atomic layer deposition. By alternately depositing inorganic precursors and organic ligands, a high-precision and uniform hybrid photoresist thin film is formed on the surface of a substrate. The specific steps include: adopting the MLD technology, precisely controlling the film composition and thickness through vacuum deposition, gas source switching and cyclic purge processes; patterning and exposing the thin film by ultraviolet lithography or electron beam; realizing pattern erasing and rewriting through heating and re-exposure; developing with a 0.01% oxalic acid solution. The obtained thin film has ultra-low roughness (RMS 0.12 nm), high resolution - the electron beam exposure can achieve at least a 50 nm line width, and excellent etching resistance, effectively solving the problems of uneven film thickness, low sensitivity and high trial-and-error cost of traditional photoresist. The present invention simplifies the process flow, is applicable to deep ultraviolet and extreme ultraviolet lithography processes, and has important application prospects in the manufacturing of semiconductor devices.

To enable suppressing arrival of a vacuum deposition material discharged from a discharge opening at a shielding position of a shutter to an object to be deposited in a vapor deposition source of a vacuum evaporation system having: a crucible 2 that accommodates a vapor deposition material Em and has the discharge opening 21 arranged on an upper surface; heating means for heating the vapor deposition material in the crucible; and a shutter Sn for selectively shutting off a scattering path of the vapor deposition material discharged from the discharge opening.SOLUTION: In a vacuum deposition source according to the invention: a shutter comprises a shutter body 4 including a base end 41 and a skirt 42 hanging down from the base end, with a first attenuation plate 43 extending in a circumferential direction orthogonal to a vertical direction being provided on a lower edge of the skirt; and the shutter further comprises a second attenuation plate 6 having an opening facing an upper edge part of the crucible, arranged around the crucible, and forming a space extending in a circumferential direction between the first attenuation plate and the second attenuation plate.SELECTED DRAWING: Figure 2

A packaging layer arrangement (110) for manufacturing a packaging container comprises: - a paper layer (112) as a carrier layer, - an oxygen barrier layer (120) such that the oxygen transfer rate of the packaging layer arrangement (110) does not exceed 1.1 cm³ / (m²·d·bar) according to DIN 53380-3, measured at 23 °C and 50% relative humidity, - a metallization barrier layer arrangement (122) formed by vacuum deposition, wherein the packaging layer arrangement (110) additionally comprises a water vapor barrier layer (118) such that the water vapor transfer rate of the packaging layer arrangement (110) does not exceed 1.1 g / (m²·d) according to DIN EN ISO 15106-3, measured at 38 °C and 90% relative humidity, wherein the oxygen barrier layer (120) is located in the layer sequence (LS) between the Water vapor barrier layer (118) and the metallization barrier layer arrangement (122) is arranged.The oxygen barrier layer (120) is formed from at least two layers (120a, 120b), each of which contains a polymer based on vinyl alcohol as its main component.

The invention discloses vacuum deposition equipment for semiconductor crystals, and relates to the technical field of vacuum deposition. A polygonal shell is fixedly mounted on the workbench in the box body; a rotary feeding assembly is arranged in the polygonal shell. The rotary feeding assembly comprises a rotary disc. The bottom of the rotating disc is fixedly mounted with the rotating support rod; the end, away from the rotating disc, of the rotating supporting rod is movably installed on a workbench in the box body through an installation bearing. A limiting rotating structure is fixedly mounted on the rotating supporting rod; according to the speed reducer, through meshing between a driving gear and a driven gear, an arc-shaped edge and a stirring column arranged on a rotating plate at the end of a rotating shaft correspond to an arc-shaped groove and a stirring groove in the side wall of a semicircular shell, when the stirring column corresponds to the stirring groove, a limiting rotating structure drives a rotating supporting rod to rotate, and the rotating effect of a rotating disc is achieved; and the sliding seats at the top alternately move to the bottom of a feeding opening formed in the top plate of the polygonal shell, and alternate feeding of the crystal placing frames placed on the multiple sliding seats is achieved.

An arrangement of vapor deposition sources for coating a substrate is described. The vapor deposition source arrangement includes: a vapor deposition source (101) having a first vapor distribution conduit (110) having a first row of nozzles (111) for depositing a first material on the substrate; a rotary driver (113) for rotating the vapor deposition source about a rotation axis (R1); and a shielding arrangement (200) partially surrounding the vapor deposition source and including an idle shielding member (202) and a shaper shielding member (201). The rotary driver is configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, in which the first row of nozzles is guided toward the idle shielding member (202), and in the first deposition position, the first row of nozzles is aligned with a first slit (211) disposed in the shaper shielding member (201), the first slit (211) being configured to limit a first opening angle (β1) of the vapor plume ejected by the first row of nozzles. A vacuum deposition system and a method for coating a substrate are further described.

The present invention relates to the technical field of semiconductor wafer processing, and discloses a semiconductor substrate processing device, including a device main body. A limit guiding groove is provided at a lower position inside the device main body. A tooling seat is movably arranged in the limit guiding groove. A plurality of groups of trays are evenly distributed inside the tooling seat. A semiconductor wafer is placed in each group of trays. A vacuum deposition tube is correspondingly arranged above the trays inside the device main body. For the semiconductor substrate processing device of the present invention, when the servo motor is started, a series of transmissions drive one group of vacuum deposition tubes to perform a uniform rotational motion, and through the connection of the synchronous sprockets, each group of vacuum deposition tubes rotates synchronously. On the one hand, it makes the heat received by the vacuum deposition tubes more uniform and improves the reaction rate. On the other hand, during the sinking process of the solid particles, due to the movement of the tube wall, they cannot adhere and are evenly dispersed, improving the deposition uniformity.

To provide a vapor deposition source for a vacuum deposition apparatus which enables direct replenishment of a deposition material without atmospheric exposure of a vacuum chamber, where the deposition is performed, while maintaining stable deposition rates even after replenishment.SOLUTION: The present invention provides a vapor deposition source DS1 for a vacuum deposition apparatus Dm1 that causes a deposition material Ms within a storage box 4, vaporized or sublimated by heating means Mt, to be released from a release part 42 and then deposited onto a target to be deposited Sw in a vacuum chamber 1. Above the storage box, a communication room 2a, 31 with a first opening-closing door 5a and a material storage room 6a are provided to enable the formation of a vacuum atmosphere. The material storage room is provided with a chute 71 with a part 71a projecting into the communication room, an input port 61 that enables the injection of the deposition material into the material storage room, a second opening-closing door 5b that closes the input port in a freely openable manner, and a delivery screw 72 that extends vertically, passing through the chute. The portion of the delivery screw projecting from the chute is provided with a diffuser 8a which extends slanting downwards in the vertical direction.SELECTED DRAWING: Figure 1

This invention discloses a solar-blind ultraviolet photodetector and its fabrication process, belonging to the field of photoelectric detection technology. The detector comprises a substrate, a bottom electrode, an electron transport layer, a lead-free low-dimensional metal halide active layer, a hole transport layer, and a top electrode arranged sequentially. The lead-free low-dimensional metal halide active layer is a Cs-Cu-I system with a zero-dimensional unit or one-dimensional chain-like crystal structure. The lead-free low-dimensional metal halide active layer is prepared by vacuum deposition of CsI and CuI. The detector of this invention exhibits high detectivity, fast response speed, low dark current, and high spectral selectivity. It achieves controllable fabrication of a high-phase-purity low-dimensional active layer, avoiding solvent residue and phase purity fluctuations problems associated with solution methods. Furthermore, its fabrication process is compatible with flexible substrates, showing significant application prospects in fields such as space communication, environmental monitoring, safety early warning, and wearable devices.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

This application relates to the field of contact terminal coating, and more specifically, to a vacuum deposition method for a gradient composite coating on contact terminals. The coating is prepared by the following steps: S1, cleaning and activation: The contact terminal blank is cleaned and activated with an activating cleaning agent to obtain blank A; S2, spray coating and pre-curing: A silane-oxygen-containing conductive liquid is sprayed onto the surface of the activated blank and pre-cured to obtain blank B; S3, PVD chromium plating: A chromium target is used to vacuum deposit a coating on the surface of blank B to form blank C; S4, shaping: Blank C is sintered to obtain a contact terminal containing a composite coating. By sequentially performing cleaning and activation, spray coating and pre-curing, PVD chromium plating, and shaping, a gradient composite layer is formed, giving the contact terminal excellent corrosion resistance and anti-detachment properties.

This utility model discloses a nano-self-cleaning cashmere sweater fabric, comprising a cashmere fabric layer, a nano-level antibacterial film layer, and a nano-level protective film layer. The nano-level antibacterial film layer is generated by sputtering on the surface of the cashmere fabric layer using vacuum deposition technology, and silver or zinc oxide is used. The nano-level protective film layer is titanium dioxide. The nano-self-cleaning cashmere sweater fabric of this utility model improves the wearing comfort of the cashmere sweater by using a cashmere fabric layer. Furthermore, the nano-level antibacterial layer formed by vacuum deposition technology is thin and composed of particles with gaps between them, allowing gaseous water molecules to pass through, which improves the waterproof and self-cleaning effects, and also enhances the breathability of the fabric.

The present invention is a method for producing a vapor deposition material that is used in a vacuum deposition method, and addresses the problem of providing a vapor deposition material that enables suppression of splash and the phenomenon of bumping during melting of the vapor deposition material. Provided is a method for producing a vapor deposition material that comprises a noble metal or a noble metal alloy, said method comprising a step for melting and casting a raw material, which is the noble metal or the noble metal alloy; a step for performing forging and / or rolling; a step for performing wire drawing; a step for performing stripping; and a step for performing cutting.

The utility model provides a one-way heating structure. The one-way heating structure comprises a first base material, a heating layer, an electrode and a second base material, the heating layer is arranged on the surface of the first base material, and the heating layer is a conductive film formed on the surface of the first base material through a semiconductor oxide vacuum coating; the heating layer is used for performing electric-heat conversion when being electrified; the electrodes are arranged on two sides of the heating layer, are in contact connection with the heating layer, are electrically connected with a power supply and are used for electrifying the heating layer; the second base material is arranged below the first base material, the second base material and the first base material are arranged at an interval, and the interval space between the first base material and the second base material is sealed to form a vacuum space. The unidirectional heating structure can utilize the vacuum space between the first base material and the second base material to prevent heat of the heating layer from spreading from the first base material to the second base material, thereby realizing unidirectional heating of the heating layer to the outer side of the first base material.

The present invention provides a lithium alloy for vacuum deposition comprising more than 23 wt% and less than 91 wt% of lithium (Li) and other unavoidable impurities, a method for manufacturing the lithium alloy for vacuum deposition, a method for manufacturing a lithium thin film for a photoelectric device, and a photoelectric device comprising the lithium thin film manufactured on the basis of the method, the lithium alloy for vacuum deposition comprising more than 23 wt% and less than 91 wt% of lithium (Li) and other unavoidable impurities, and at least a Li3Bi phase and a lithium phase.