195 results about "Vacuum deposition" patented technology

A preparation method of a high-quality titanium dioxide film with a controllable refractive index comprises the following steps that (1) a pulse laser light path is adjusted, and uniform scanning of a laser beam on the surface of a target material is achieved through a two-dimensional light beam scanning galvanometer; (2) preparing a titanium dioxide film: placing the substrate and the target material in a deposition cavity of vacuum deposition equipment, adjusting the distance between the target material and the substrate, setting the rotating speed of the target material and the heating temperature of the substrate, setting pulse laser parameters, bombarding the target material through collinear pulse string laser, and depositing generated plasma plume on the substrate to form the titanium dioxide film; and (3) annealing treatment of the titanium dioxide film: carrying out high-temperature oxygen introduction annealing treatment on the deposited titanium dioxide film. According to the method, the roughness of the titanium dioxide film is greatly improved in a collinear pulse string laser output mode, so that the high-quality titanium dioxide film with a smoother surface is obtained; the refractive index of the titanium dioxide film is flexibly regulated and controlled by changing the annealing temperature and time of high-temperature oxygen introduction.

A continuous-wave perovskite polariton laser device, including an optical microcavity, a spacer layer, and a gain medium. The gain medium is a perovskite material or a composite material containing perovskite, in a form of thin film, microcrystal, phosphor, nanocrystal, quantum dot, or single crystal. The perovskite gain medium is prepared by solution process or vacuum deposition technique, and is combined with an optical resonator. By exploiting the strong interaction between excitons and photons, a steady-state exciton-polariton condensation is formed, enabling the generation of continuous-wave polariton laser emission with a low threshold. The laser device can achieve low-threshold continuous-wave or pulsed lasing emission at room temperature under various light sources pumping or electrical excitation. Its threshold is 1 to 3 orders of magnitude lower than that of conventional semiconductor lasers, with an optimized threshold as low as 0.1 to 1 W / cm2, representing a novel ultralow-power coherent light source technology.

The invention discloses a preparation process of a BC battery, which comprises the following steps: S1, preparing a first metal layer on the surface of an N electrode by a light induction process; s2, sequentially depositing a second metal layer, a barrier layer and a seed layer on the back surface of the battery piece by a vacuum deposition process; the material of the second metal layer is different from that of the first metal layer; s3, performing a patterning process on the back surface of the battery piece to expose a to-be-electroplated region; s4, preparing a metal grid line in the to-be-electroplated area through an electroplating process; and S5, removing the mask layer, the seed layer, the barrier layer and the second metal layer. Through the photoelectric induction technology, the nickel metal layer is prepared on the N electrode, the N face and the nickel metal form ohmic contact, the aluminum metal layer is prepared on the surface of the P electrode, the P face and the aluminum metal form ohmic contact, compounding of the metal contact face is reduced, the open voltage Voc of the battery piece is improved, ohmic contact resistance is reduced, and the short-circuit current Isc and the fill factor FF of the battery piece are improved.

The present invention relates to a method for producing a vacuum metallized paper, comprising: a) providing a paper substrate, the paper substrate comprising 0.3-60 kg / ton of a wetting agent, based on a total dry weight of the paper substrate, b) applying a precoat layer to the paper substrate, and c) applying a vacuum metallized layer to the precoat layer to provide a vacuum metallized paper. The present invention further relates to a vacuum metallized paper.

A device for vacuum deposition systems, comprising: a movable main body, at least one deposition source mounted on the movable main body, at least one coating window associated with the at least one deposition source and mounted on the movable main body, and at least one cooling device connected to the at least one coating window and mounted on the movable main body.

The invention relates to the technical field of photoluminescence materials, and particularly discloses a film quality monitoring method in a film vacuum deposition process, and the method comprises the following steps: in the film vacuum deposition process, measuring the photoluminescence intensity of a film and the real-time intensity of exciting light; calculating the relative photoluminescence quantum efficiency based on the photoluminescence intensity and the real-time intensity of the exciting light; and monitoring the film forming quality of the thin film based on the relative photoluminescence quantum efficiency, and determining an optimal deposition condition. According to the method for monitoring the quality of the thin film in the vacuum deposition process, the relative photoluminescence quantum efficiency of the thin film in the vacuum deposition process is calculated based on the measured photoluminescence intensity of the thin film in the vacuum deposition process and the real-time intensity of the exciting light; and the film forming quality of the film is monitored through the relative photoluminescence quantum efficiency, and the optimal deposition condition is further determined.

The invention relates to the technical field of coatings, in particular to a PVD (Physical Vapor Deposition) coating process method applied to a galvanized sheet stamping die, which comprises the following steps of: pretreating the die, cleaning the surface of the die by a wet process, placing the die in a vacuum deposition cavity, vacuumizing, and heating to a preset temperature in an inert gas environment; plasma pretreatment is conducted on the surface of the mold, a high-power pulse magnetron sputtering cathode of a chromium target is selected to discharge in the argon working environment to generate plasma rich in chromium ions, and negative bias voltage is applied to the mold; starting at least one unbalanced magnetron sputtering cathode, gradually increasing the target current by the unbalanced magnetron sputtering cathode in a current ramp-up mode so as to improve the target voltage, and synchronously introducing nitrogen as a reaction gas, so that a nitride transition layer is deposited on the surface of the mold; and a high-power pulse magnetron sputtering cathode and an unbalanced magnetron sputtering cathode synchronously work on the transition layer to carry out multi-source reactive sputtering deposition, so that a multi-layer hard coating formed by alternating titanium aluminum vanadium and chromium nitride is formed. By combining the high-power pulse magnetron sputtering technology and the unbalanced magnetron sputtering technology, the problems that in the prior art, a coating is poor in adhesive force and insufficient in high temperature resistance are solved.

The present invention belongs to the technical field of capacitor films, and relates to a preparation method and application of a double-sided metallized polypropylene film. The preparation method comprises the following steps: (1) soaking a polypropylene film in a polyvinyl alcohol solution, taking out and drying to obtain a pretreated polypropylene film; (2) vacuum evaporating a first aluminum metal layer on one side of the pretreated polypropylene film, and then vacuum evaporating a first CuBi alloy metal layer on the surface of the first aluminum metal layer to obtain a single-sided metallized polypropylene film; (3) vacuum evaporating a second aluminum metal layer on the other side of the single-sided metallized polypropylene film, and then vacuum evaporating a second CuBi alloy metal layer on the surface of the second aluminum metal layer to obtain a double-sided metallized polypropylene film. The double-sided metallized polypropylene film of the present invention has excellent high temperature and high humidity resistance after being made into a capacitor.

The invention relates to a cooled manipulator (10) for an ultra-high vacuum process device of a structure comprising one or more layers. According to the invention, the cooled manipulator for an ultra-high vacuum process device comprises: - a cooling device (12) comprising a solid material, - a rotating support (14) integral with the cooling device, - a reservoir (16) supplied by a circulation of a cryogenic fluid, configured to be moved between two positions (P1) and (P2), the first in which the reservoir is in contact with the cooling device, the second in which the reservoir is not in contact with the cooling device. Figure for the abstract: Fig. 1.

The invention relates to a preparation method of a composite film with a low resistance temperature coefficient, which belongs to the technical field of surface functional film materials, and comprises the following steps: placing a substrate in a vacuum deposition chamber, vacuumizing the vacuum deposition chamber until the vacuum deposition chamber is less than or equal to 5 * 10 <-3 > Pa, filling argon, adjusting the working air pressure to 0.2-0.8 Pa, and keeping the temperature for 2-3 hours; a metal target material with a positive resistance temperature coefficient and a conductive ceramic target material with a negative resistance temperature coefficient are used for co-sputtering coating on a substrate, and the low-resistance temperature coefficient composite film is obtained. According to the invention, co-sputtering is carried out on a metal material and a conductive ceramic material with a negative resistance temperature coefficient by utilizing a positive resistance temperature coefficient, and a thin film sample with low TCR performance requirements is obtained by regulating and controlling the power ratio of the metal material and the conductive ceramic material, and the repeatability of the sample is relatively good.

The utility model discloses three-chamber superconductive tape roll-to-roll vacuum coating equipment, which comprises an unwinding chamber, a coating chamber, a winding chamber and an equipment base, the unwinding chamber, the coating chamber and the winding chamber are sequentially arranged on the equipment base, two sides of the coating chamber are respectively provided with a first chamber connecting pipe and a second chamber connecting pipe, and the first chamber connecting pipe and the second chamber connecting pipe are connected with the equipment base. The coating chambers are respectively connected to the unwinding chamber and the winding chamber through the first chamber connecting pipe and the second chamber connecting pipe, the equipment is mainly used for vacuum deposition of an oxide film layer on the surface of the superconducting strip, the left coating chamber and the right coating chamber are arranged, the winding system drives the steel strip to move, the automation degree is high, procedures and flow steps are reduced, the production efficiency is improved, and the production cost is reduced. And the working efficiency is improved, the working hours are shortened, the cost and damage caused by manual misoperation are reduced, the cost is saved, the utilization rate is high, and environmental protection is achieved.

The invention discloses champagne rhinestones and a vacuum coating color changing method, and belongs to the technical field of rhinestones. The method comprises the steps that S101, a template is transferred, wherein rhinestones are transferred to the template; s102, bias plasma cleaning is conducted, specifically, the template is transferred to a coating chamber, vacuumizing and heating are conducted, and then bias plasma cleaning is conducted; s103, aluminum oxide layer plating: after vacuum cleaning, an aluminum oxide target material is adopted for vacuum coating to form an aluminum oxide layer, and the coating conditions are as follows: the current is 50-70 A, the time is 100-130 S, and the vacuum degree is 5.0-7.0 * 10 <-1 > Pa; in the step S104, oxygen is introduced, ferrochrome is adopted for vacuum coating to form the ferrochrome layer, and the coating conditions are that the current ranges from 50 A to 70 A, the time ranges from 220 S to 270 S, and the vacuum degree ranges from 7.5 * 10 <-1 > Pa to 9.0 * 10 <-1 > Pa; and S105, discharging is conducted, specifically, after cooling is conducted, air is introduced, and then the template is taken out of the coating chamber.

The invention discloses a zinc selenide leftover material regeneration method and system and a high-purity zinc selenide evaporation material, and relates to the technical field of semiconductor material cyclic regeneration. The zinc selenide leftover material regeneration method sequentially comprises a pretreatment step, a low-temperature devolatilization step, a medium-temperature impurity removal step, an ultrafine crushing step and a vacuum directional sublimation purification step, and the low-temperature devolatilization step is characterized in that the zinc selenide leftover material is heated to a first preset temperature under a dynamic vacuum condition to remove free selenium and elemental zinc impurities; in the medium-temperature impurity removal step, the zinc selenide leftover materials are heated to a second preset temperature to promote lattice recombination of ZnO impurities, a double-temperature-zone vacuum deposition furnace is adopted in the vacuum directional sublimation purification step, the temperature of an evaporation zone is 1100-1150 DEG C, the temperature of a condensation zone is 400-450 DEG C, the steam transmission distance is smaller than 30 cm, and products in the condensation zone are collected. The technical scheme provided by the invention has the advantages of high recycling rate, high purity of the regenerated zinc selenide evaporation material, low energy consumption and high process safety.

This application discloses a selective absorption membrane, its preparation method, and its application, belonging to the field of solar thermal collection technology. The selective absorption membrane is prepared by anodic etching of copper foil in sodium hydroxide, sodium citrate, and copper sulfate. Compared with vacuum deposition, this preparation method uses readily available raw materials, is simple to operate, and is low in cost. Furthermore, the prepared selective absorption membrane exhibits higher absorptivity in the short-wavelength region, which is beneficial for improving photothermal conversion efficiency. When used in the preparation of solar thermal collectors, it can quickly and efficiently convert solar energy into thermal energy. Photothermal biochar prepared from anaerobic fermentation sludge exhibits excellent adsorption performance. Its application in wastewater treatment forms a closed-loop process of "carbon source capture – anaerobic fermentation – photothermal carbonization," significantly improving the biogas yield and organic matter degradation efficiency of the anaerobic fermentation system.

The invention discloses an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic materials. A preparation method of an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation comprises the following steps: depositing an Se-doped film on the surface of a silicon substrate by adopting a vacuum deposition process, and then preparing black silicon with a micro-nano composite structure through picosecond laser scanning; and performing sulfur ion implantation modification on the black silicon with the micro-nano composite structure, and annealing to prepare the S and Se co-doped silicon-based near-infrared photosensitive material. Through a picosecond laser-ion implantation composite doping process, the problems of thermal damage and lattice defects in a traditional doping method are successfully solved, and preparation of the S and Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defects is realized. The light absorptivity of the material at the wave band of 1300nm is remarkably improved, a process scheme capable of realizing mass production is provided for third-generation photovoltaic devices and high-performance infrared detectors, and the material has important application value and wide market prospects.

The application discloses a kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation and preparation method and application, belong to semiconductor optoelectronic material technical field;A kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation preparation method, comprising the following steps: using vacuum deposition process is deposited Se doped film on the surface of silicon substrate, then by picosecond laser scanning preparation obtains the micro-nano composite structure black silicon;Sulfur ion implantation modification is carried out to the micro-nano composite structure black silicon, annealing, and the S, Se co-doped silicon-based near-infrared photosensitive material is prepared.The application is successfully solved the problem of thermal damage and lattice defect in traditional doping method by the composite doping process of picosecond laser-ion implantation, realizes the preparation of S, Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defect.The light absorption rate of the material at 1300nm band is significantly improved, which provides a mass production process scheme for the third generation photovoltaic device and high-performance infrared detector, and has important application value and broad market prospect.

A packaging layer arrangement (110) for manufacturing a packaging container comprises: - a paper layer (112) as a carrier layer, - an oxygen barrier layer (120) such that the oxygen transfer rate of the packaging layer arrangement (110) does not exceed 1.1 cm³ / (m²·d·bar) according to DIN 53380-3, measured at 23 °C and 50% relative humidity, - a metallization barrier layer arrangement (122) formed by vacuum deposition, wherein the packaging layer arrangement (110) additionally comprises a water vapor barrier layer (118) such that the water vapor transfer rate of the packaging layer arrangement (110) does not exceed 1.1 g / (m²·d) according to DIN EN ISO 15106-3, measured at 38 °C and 90% relative humidity, wherein the oxygen barrier layer (120) is located in the layer sequence (LS) between the water vapor barrier layer (118) and the metallization barrier layer arrangement (122), wherein the packaging layer arrangement (110) has a cover layer (124),wherein the metallization barrier layer arrangement (122) is arranged between the paper layer (112) and the cover layer (124). The cover layer (110) is predominantly formed from a polyolefin blend or from a copolymer based on styrene and acrylic or from a thermoplastic elastomer.

A vacuum deposition facility for continuously depositing, on a running substrate, coatings formed from at least one metal inside a Vacuum deposition facility including a vacuum chamber, a coated substrate coated with at least one metal on both sides of the substrate and a coated metallic substrate.

The present invention provides: a lithium alloy for vacuum deposition, the lithium alloy comprising 23 wt% to 91 wt% (exclusive of 23 wt% and 91 wt%) of bismuth (Bi), with the balance being lithium (Li) and other inevitable impurities, and including at least a Li3Bi phase and a lithium phase; a method for manufacturing the lithium alloy for vacuum deposition; a method for manufacturing a lithium thin film for a photoelectric device; and a photoelectric device containing the lithium thin film produced thereby.

The utility model discloses an adjustable crystal oscillator switching structure, which comprises a mounting plate, a probe seat, a driving mechanism and a separation blade, the mounting plate is mounted outside the evaporator; the probe seat is mounted in the evaporator, a pair of crystal oscillator probes is mounted on the probe seat, a connecting end is mounted on the mounting plate, and a pair of first transmission lines are connected between the probe seat and the connecting end; the driving mechanism is mounted on the mounting plate and comprises a second bracket, the second bracket is arranged outside the evaporator, a first cylinder is mounted on the second bracket, an output end of the first cylinder is connected with a magnetic fluid, the magnetic fluid is connected with the mounting plate, the magnetic fluid is connected with a connecting hose, and the connecting hose is connected with the probe seat; and the separation blade is arranged on the connecting hose and is rotationally connected with the probe seat. According to the utility model, the gap between the rotatable separation blade and the crystal oscillator probe can be reduced, so that steam is not easy to attach to the crystal oscillator probe, the probability that the crystal oscillator probe is coated with a film can be reduced, and the vacuum evaporator can be stably used.

Provided is a vacuum deposition system that, without additional equipment, is capable of effectively suppressing adhesion of a splash onto a deposition object.　A vacuum deposition system ES comprises: a vapor deposition boat 3 that includes a boat body 31 having a storage part 31a of a vapor deposition material Em; a material supply unit 6 for supplying the wire-shaped vapor deposition material from above so as to abut a bottom plate of the boat body; a power source Ps for heating the boat body by supplying power; and a control unit Uc. The vacuum deposition system ES further comprises an ammeter Am for detecting current at the time of energization by the power source, the current changing together with the amount of molten metal when the vapor deposition material melts and is wet-spread in the storage part. The control unit obtains the average value of the current values detected by the ammeter Am per unit time, and changes the current value by controlling the power source on the basis of each of the average values successively obtained.

The application discloses a flexible bio-memristor and a preparation method thereof. The preparation method comprises the following steps: plugging the non-electrode area of a first filter membrane and a second filter membrane; filtering top electrode material solution by vacuum filtration to filter the top electrode material to the electrode area of the first filter membrane, and filtering bottom electrode material solution by vacuum filtration to filter the bottom electrode material to the electrode area of the second filter membrane; transferring the top electrode material on the first filter membrane to a first substrate film; coating a functional material on the bottom electrode of the bottom electrode layer to form an intermediate functional layer; and assembling the memristor. The method provided by the application is prepared based on a solution method, and has the advantages of simple process, low cost, and the core step of the whole process being performed at a relatively low temperature, so that high-temperature annealing, complex photolithography and vacuum deposition equipment required in traditional semiconductor processes are avoided, equipment investment, energy consumption and production cost are significantly reduced, and the method is especially suitable for large-scale production of flexible electronic devices.

The invention relates to an article comprising a substrate having at least one main surface coated with a layer L of a material M obtained by vacuum deposition, by co-evaporation, of at least one metallic compound A chosen from alkaline-earth metal fluorides and of at least one organic compound B, the material M having a refractive index at the wavelength of 632.8 nm ranging from 1.38 to 1.47. According to the invention:the organic compound B comprises an organosilicon compound or a mixture of organosilicon compounds; andthe deposition of the compound B, in gaseous form, is carried out in the presence of an ion bombardment.

The present invention discloses an erasable organic-inorganic hybrid patterned thin film prepared by atomic layer deposition. By alternately depositing inorganic precursors and organic ligands, a high-precision and uniform hybrid photoresist thin film is formed on the surface of a substrate. The specific steps include: adopting the MLD technology, precisely controlling the film composition and thickness through vacuum deposition, gas source switching and cyclic purge processes; patterning and exposing the thin film by ultraviolet lithography or electron beam; realizing pattern erasing and rewriting through heating and re-exposure; developing with a 0.01% oxalic acid solution. The obtained thin film has ultra-low roughness (RMS 0.12 nm), high resolution - the electron beam exposure can achieve at least a 50 nm line width, and excellent etching resistance, effectively solving the problems of uneven film thickness, low sensitivity and high trial-and-error cost of traditional photoresist. The present invention simplifies the process flow, is applicable to deep ultraviolet and extreme ultraviolet lithography processes, and has important application prospects in the manufacturing of semiconductor devices.

To enable suppressing arrival of a vacuum deposition material discharged from a discharge opening at a shielding position of a shutter to an object to be deposited in a vapor deposition source of a vacuum evaporation system having: a crucible 2 that accommodates a vapor deposition material Em and has the discharge opening 21 arranged on an upper surface; heating means for heating the vapor deposition material in the crucible; and a shutter Sn for selectively shutting off a scattering path of the vapor deposition material discharged from the discharge opening.SOLUTION: In a vacuum deposition source according to the invention: a shutter comprises a shutter body 4 including a base end 41 and a skirt 42 hanging down from the base end, with a first attenuation plate 43 extending in a circumferential direction orthogonal to a vertical direction being provided on a lower edge of the skirt; and the shutter further comprises a second attenuation plate 6 having an opening facing an upper edge part of the crucible, arranged around the crucible, and forming a space extending in a circumferential direction between the first attenuation plate and the second attenuation plate.SELECTED DRAWING: Figure 2

A packaging layer arrangement (110) for manufacturing a packaging container comprises: - a paper layer (112) as a carrier layer, - an oxygen barrier layer (120) such that the oxygen transfer rate of the packaging layer arrangement (110) does not exceed 1.1 cm³ / (m²·d·bar) according to DIN 53380-3, measured at 23 °C and 50% relative humidity, - a metallization barrier layer arrangement (122) formed by vacuum deposition, wherein the packaging layer arrangement (110) additionally comprises a water vapor barrier layer (118) such that the water vapor transfer rate of the packaging layer arrangement (110) does not exceed 1.1 g / (m²·d) according to DIN EN ISO 15106-3, measured at 38 °C and 90% relative humidity, wherein the oxygen barrier layer (120) is located in the layer sequence (LS) between the Water vapor barrier layer (118) and the metallization barrier layer arrangement (122) is arranged.The oxygen barrier layer (120) is formed from at least two layers (120a, 120b), each of which contains a polymer based on vinyl alcohol as its main component.

The invention discloses vacuum deposition equipment for semiconductor crystals, and relates to the technical field of vacuum deposition. A polygonal shell is fixedly mounted on the workbench in the box body; a rotary feeding assembly is arranged in the polygonal shell. The rotary feeding assembly comprises a rotary disc. The bottom of the rotating disc is fixedly mounted with the rotating support rod; the end, away from the rotating disc, of the rotating supporting rod is movably installed on a workbench in the box body through an installation bearing. A limiting rotating structure is fixedly mounted on the rotating supporting rod; according to the speed reducer, through meshing between a driving gear and a driven gear, an arc-shaped edge and a stirring column arranged on a rotating plate at the end of a rotating shaft correspond to an arc-shaped groove and a stirring groove in the side wall of a semicircular shell, when the stirring column corresponds to the stirring groove, a limiting rotating structure drives a rotating supporting rod to rotate, and the rotating effect of a rotating disc is achieved; and the sliding seats at the top alternately move to the bottom of a feeding opening formed in the top plate of the polygonal shell, and alternate feeding of the crystal placing frames placed on the multiple sliding seats is achieved.

An arrangement of vapor deposition sources for coating a substrate is described. The vapor deposition source arrangement includes: a vapor deposition source (101) having a first vapor distribution conduit (110) having a first row of nozzles (111) for depositing a first material on the substrate; a rotary driver (113) for rotating the vapor deposition source about a rotation axis (R1); and a shielding arrangement (200) partially surrounding the vapor deposition source and including an idle shielding member (202) and a shaper shielding member (201). The rotary driver is configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, in which the first row of nozzles is guided toward the idle shielding member (202), and in the first deposition position, the first row of nozzles is aligned with a first slit (211) disposed in the shaper shielding member (201), the first slit (211) being configured to limit a first opening angle (β1) of the vapor plume ejected by the first row of nozzles. A vacuum deposition system and a method for coating a substrate are further described.

The present invention relates to the technical field of semiconductor wafer processing, and discloses a semiconductor substrate processing device, including a device main body. A limit guiding groove is provided at a lower position inside the device main body. A tooling seat is movably arranged in the limit guiding groove. A plurality of groups of trays are evenly distributed inside the tooling seat. A semiconductor wafer is placed in each group of trays. A vacuum deposition tube is correspondingly arranged above the trays inside the device main body. For the semiconductor substrate processing device of the present invention, when the servo motor is started, a series of transmissions drive one group of vacuum deposition tubes to perform a uniform rotational motion, and through the connection of the synchronous sprockets, each group of vacuum deposition tubes rotates synchronously. On the one hand, it makes the heat received by the vacuum deposition tubes more uniform and improves the reaction rate. On the other hand, during the sinking process of the solid particles, due to the movement of the tube wall, they cannot adhere and are evenly dispersed, improving the deposition uniformity.

To provide a vapor deposition source for a vacuum deposition apparatus which enables direct replenishment of a deposition material without atmospheric exposure of a vacuum chamber, where the deposition is performed, while maintaining stable deposition rates even after replenishment.SOLUTION: The present invention provides a vapor deposition source DS1 for a vacuum deposition apparatus Dm1 that causes a deposition material Ms within a storage box 4, vaporized or sublimated by heating means Mt, to be released from a release part 42 and then deposited onto a target to be deposited Sw in a vacuum chamber 1. Above the storage box, a communication room 2a, 31 with a first opening-closing door 5a and a material storage room 6a are provided to enable the formation of a vacuum atmosphere. The material storage room is provided with a chute 71 with a part 71a projecting into the communication room, an input port 61 that enables the injection of the deposition material into the material storage room, a second opening-closing door 5b that closes the input port in a freely openable manner, and a delivery screw 72 that extends vertically, passing through the chute. The portion of the delivery screw projecting from the chute is provided with a diffuser 8a which extends slanting downwards in the vertical direction.SELECTED DRAWING: Figure 1