60results about How to "Satisfactory productivity" patented technology

Provided are a method for producing a film, which is satisfactory in productivity, exhibits high gas-barrier property immediately after production, and has excellent adhesive strength between constituent layers while maintaining the excellent gas-barrier property, and a gas-barrier film, which is obtained by the method. The method for producing a gas-barrier film includes the steps of; (1) forming an inorganic thin film by a vacuum deposition method on at least one surface of a base film; (2) forming a thin film by a plasma CVD method on the inorganic thin film formed in the step (1); and (3) forming an inorganic thin film by the vacuum deposition method on the thin film formed in the step (2), in which each of the steps (1) and (3), and the step (2) are sequentially carried out at a pressure of 1×10⁻⁷ to 1 Pa, and at a pressure of 1×10⁻³ to 1×10² Pa, respectively.

An electric double layer capacitor includes, contained in a casing, an electrolyte, a positive electrode and a negative electrode each being an electrode containing carbon black, to form an electric double layer at the interface with the electrolyte, and a separator interposed between the positive electrode and the negative electrode. At least one electrode of the positive electrode and the negative electrode has protruded portions or bent portions formed continuously in the height direction against the bottom face of the casing. Further, a space due to the height of the protruded portions or the bent portions is formed between the at least one electrode and the separator.

There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.

A method for producing a piezoelectric composite substrate with satisfactory productivity controls the inclination of the crystal axis and the polar axis of a single-crystal thin film and prevents an adverse effect due to pyroelectricity in a production process. The method for producing a piezoelectric composite substrate provided with a plurality of piezoelectric materials includes an ion-implantation step, a bonding step, and a separation step. In the ion-implantation step, H⁺ ions are implanted into a piezoelectric single crystal material. In the bonding step, the piezoelectric single crystal material is bonded to a piezoelectric single crystal material. At this time, the polarity of the polar surface of the piezoelectric single crystal material is opposite to the polarity of the polar surface of the piezoelectric single crystal material, the polar surfaces being bonded to each other. In the separation step, a separation layer of the piezoelectric single crystal material is divided by heating to separate a piezoelectric single-crystal thin film.

A manufacturing method of a secondary battery according to the present invention includes a charging/discharging process wherein the secondary battery is arranged to a restraining jig, that restricts an expansion caused on the battery case with respect to at least a part of the battery case and that is configured to be removable from a charging/discharging device with the secondary battery arranged thereto regardless of the magnitude of the internal pressure in the secondary battery; a charging/discharging is performed to the secondary battery with the restraining jig mounted to the charging/discharging device; and after the completion of the charging/discharging, the restraining jig is removed from the charging/discharging device with the secondary battery arranged to the restraining jig.

A semiconductor device includes a cooler having a main surface constructed of a metal base, joined layers fixed on the metal base through joining layers, insulating layers fixed on the joined layers and which contain an organic resin as a base material, metal layers provided on the insulating layers, and semiconductor elements provided on the metal layers. A stacked structure with the joined layers, the insulating layers, and the metal layers is divided into parts containing one or the plurality of semiconductor elements, and is fixed through the joining layers on the metal base.

Lepidocrocite potassium magnesium titanate having a composition represented by the formula K_0.2-0.7Mg_0.4Ti_1.6O_3.7-4 and obtainable by subjecting an aqueous slurry of lepidocrocite potassium magnesium titanate having a composition represented by the formula K_0.8Mg_0.4Ti_1.6O₄ to an acid treatment and subsequent calcination.

There is disclosed a semiconductor device comprising a copper interconnect layer 7 where a copper film is buried in a concave in an insulating film 3 via a barrier metal film, wherein the copper interconnect layer 7 has a line/space ratio of 4.5 or less and an interconnect occupancy of 10 to 60%. It can effectively prevent dishing and erosion, as well as increase and dispersion in an interconnect resistance when forming damascene copper interconnects.

Provided is an XY guide table in which rigidity of portions thereof where ball rolling surfaces are formed is enhanced to thereby eliminate clearances between balls and ball rolling grooves making it possible to guide an upper plate in an X-direction and Y-direction with respect to a lower plate without involving any rattling, and which can be formed in a very thin shape. The XY guide table includes the lower plate, an intermediate plate, and the upper plate assembled with each other through intermediation of the balls. Each of the lower plate and the upper plate has a pair of rail bodies of a substantially rectangular sectional configuration and a storage groove sandwiched between the rail bodies, and is formed in a substantially channel-like configuration. The ball rolling groove is formed in a side surface of each rail body facing the storage groove. The plates are stacked together, with the storage grooves being opposed and orthogonal to each other. The intermediate plate is formed in a substantially rectangular configuration, and has the lower half thereof loosely fitted into the storage groove of the lower plate and the upper half thereof loosely fitted into the storage groove of the upper plate.

A silane crosslinkable rubber composition having a silane crosslinkable rubber in which a silane coupling agent is grafted onto a base rubber containing 61 to 99 mass % of ethylene-α-olefin rubber and 1 to 39 mass % of polypropylene-based resin, and with respect to 100 parts by mass of the base rubber, 0.3 to 400 parts by mass of inorganic filler, and 0.0001 to 0.5 parts by mass of silanol condensation catalyst; a silane crosslinked rubber molded body obtained by bringing the rubber composition into contact with water after molding; a silane crosslinked rubber molded article including the rubber molded body; and a method of producing a silane crosslinkable rubber composition and a silane crosslinked rubber molded body.

A manufacturing method according to an embodiment of the invention includes a step of calculating Pj_0.1 satisfying (62.6×J_OH+1175)×Pj=0.1, where Pj is an optical power ratio at the wavelength 1383 nm of a portion corresponding to a cladding material of an MCF after drawn, and an outer diameter ratio P_cc0.1 of core portions to core rods to obtain Pj_0.1. The core rods have an outer diameter 2R_0.1 satisfying the condition that a ratio P_cc is not less than the ratio P_cc0.1, and the cladding material has holes formed in a diameter larger by C (not less than 0.15 mm and not more than 1.5 mm) than the outer diameter of the core rods.

This conductive coating film-forming agent contains a coating film-forming component having a polyol structure, and at least one kind of a compound selected from bis(fluorosulfonyl)imide salts represented by (FSO₂)₂N.X, which is easy to handle while maintaining solubility in the coating film-forming component, and exerts no influence on the environment and also has excellent conductivity even in the use-environment at high temperature.

A removable pressure sensitive adhesive composition includes at least (A) a hydroxyl-group-containing acrylic polymer, (B) an amine compound containing plural hydroxyl groups, and (C) a polyisocyanate compound and has a gel fraction of equal to or more than 70% by weight after drying or curing. A removable pressure sensitive adhesive sheet has a removable pressure sensitive adhesive layer including the removable pressure sensitive adhesive composition formed on one or both sides of a base material. The sheet may have a 180° peel force with respect to a melamine-faced steel sheet of 5 N/20-mm or less and may have a 180 ° peel force after adhesion at 50° C. for 48 hours of 1.2 times or less the initial adhesion (after adhesion at 23° C. for 20 minutes), as determined at a pulling rate of 300 mm/minute, 23° C. and 50% relative humidity.

A highly adhesive pressure sensitive adhesive composition includes at least (A) a hydroxyl-group-containing acrylic polymer, (B) an amine compound containing plural hydroxyl groups, and (C) a polyisocyanate compound and has a gel fraction of equal to or more than 10% by weight and less than 70% by weight after drying or curing. A highly adhesive pressure sensitive adhesive sheet has a highly adhesive pressure sensitive adhesive layer including the highly adhesive pressure sensitive adhesive composition formed on one or both sides of a base material. The sheet preferably has a 180° peel force with respect to a stainless steel sheet of 10 N/20-mm or more as determined at a pulling rate of 300 mm/minute, 23° C. and 50% relative humidity.