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5results about How to "High rate" patented technology

Eisherstellungsmaschine und kühlschrank damit

ActiveAT1901798Tincrease heat productionreduce rate
The present invention comprises: a first tray for forming a portion of an ice-making cell; a second tray forming the other portion of the ice-making cell, and capable of moving relative to the first tray; an ice bin for storing ice separated from the first and second trays; and a full-ice sensing lever for moving together with the second tray in a predetermined range.
Owner:LG ELECTRONICS INC

Single-crystal-type multi-element positive electrode material, and preparation method therefor and application thereof

A single-crystal-type multi-element positive electrode material, and a preparation method therefor and an application thereof. The positive electrode material satisfies the following conditions: single crystal sizes DPS90, DPS10 and DPS50 of the positive electrode material, which are measured by means of SEM, satisfying the following relationship: 0.1≤B90=(DPS90-DPS10) / DPS50≤1.5; and the agglomeration rate of the positive electrode material being less than or equal to 20%, wherein DPS90 represents that 90% of the single crystal size of the positive electrode material is less than DPS90, DPS50 represents that 50% of the single crystal size of the positive electrode material is less than DPS50, and DPS10 represents that 10% of the single crystal size of the positive electrode material is less than DPS10. The single-crystal-type multi-element positive electrode material has rounded morphology, a uniform particle size, less agglomeration, less adhesion, a high compaction density and a good structural stability, and when same is applied to a lithium ion battery, the energy density, rate capability, cyclic stability and safety of the lithium ion battery can be improved.
Owner:BEIJING EASPRING MATERIAL TECH CO LTD

Composite silicon carbide substrate and preparation method therefor

Provided are a composite silicon carbide substrate and a preparation method therefor. The composite silicon carbide substrate comprises a single crystal layer, a bonding layer and a support layer which are stacked in sequence; a surface of the single crystal layer is provided with a periodic atomic step structure; the atomic step structure comprises any one of a four-width step structure, a two-width step structure or a single-width step structure. The preparation method comprises: (1) bonding a support layer with an ion-implanted single crystal substrate, and performing a heat treatment and detaching to obtain an intermediate product of the composite silicon carbide substrate; and (2) subjecting a surface of a single crystal layer of the intermediate product of the composite silicon carbide substrate obtained in step (1) to oxidation modification and polish removal alternately, that is, forming a periodic atomic step structure on the surface of the single crystal layer, to obtain the composite silicon carbide substrate. The composite silicon carbide substrate meets the needs of high-voltage power devices for silicon carbide epitaxial layers with a large thickness and high quality, and the preparation method is simple and efficient, and has good controllability.
Owner:TJ INNOVATIVE SEMICON SUBSTRATE TECH CO LTD

Polierzusammensetzungen und verfahren zur verwendung davon

UndeterminedAT1904229Tprevent shorting of electrical circuitshigh rate
This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C4 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.
Owner:FUJIFILM ELECTRONIC MATERIALS U S A INC

Vorrichtung zur extrakorporalen blutbehandlung

UndeterminedAT1927324Thigh rateimprove security
An apparatus for extracorporeal blood treatment comprises an extracorporeal blood circuit configured for connection either to a vascular access of a patient (P) or to a blood circuit of a high blood flow rate machine (36). A control unit (100) is configured for checking the connection of the extracorporeal blood circuit by performing the following procedure: receiving a measured pressure from a pressure sensor (25, 26); detecting if the extracorporeal blood circuit is connected to the vascular access of the patient (P) or to the blood circuit of the high blood flow rate machine (36) by performing an analysis of the measured pressure or of a parameter correlated to the measured pressure; issuing a signal if the connection to the vascular access of the patient (P) and / or the connection to the blood circuit of the high blood flow rate machine (36) is detected.
Owner:GAMBRO LUNDIA AB