259 results about "Plasma processing" patented technology

This invention discloses a plasma processing device and its operating method. The plasma processing device includes: a vacuum reaction chamber, comprising a reaction chamber body and a chamber end cap; a lower electrode assembly disposed at the bottom of the vacuum reaction chamber; and an upper electrode assembly disposed opposite to the lower electrode assembly. Observation windows are respectively disposed on at least two adjacent sidewalls of the reaction chamber body, and a monitoring instrument is disposed outside the observation windows. The monitoring instrument is used to monitor the horizontal distance between the edges of the upper electrode assembly and the lower electrode assembly. Its advantage is that this plasma processing device achieves monitoring of the horizontal distance between the upper and lower electrode assemblies within the chamber through monitoring instruments on at least two adjacent sidewalls, thereby enabling monitoring of their concentricity and helping personnel understand the positional relationship of each component within the vacuum reaction chamber.

The present invention provides a plasma processing device for efficiently performing plasma processing. This plasma processing device includes a chamber, a substrate support part disposed in the chamber and including a lower electrode, an upper electrode disposed above the substrate support part, an RF signal generator electrically connected to the upper electrode or the lower electrode and configured to generate an RF signal for generating plasma in the chamber, a voltage signal generator electrically connected to the lower electrode and configured to generate a voltage signal having a voltage pulse sequence, a rectifier element electrically connected between a ground potential and the upper electrode, and a voltage phase adjustment element electrically connected, between the ground potential and the upper electrode, in series with the rectifier element.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

The present application provides a kind of stable ignition and maintain plasma plasma processing device.Electrical discharge processing device includes: plasma processing cavity, forms plasma processing space;Substrate support part, be arranged in the plasma processing cavity;Gas introduction unit, imports gas to the plasma processing space;Antenna, be arranged in the upper of the plasma processing cavity, and be supplied with the source RF signal for generating plasma;Alternating current power supply, the source RF signal is supplied to the antenna;Electromagnet, be arranged in the radial outer side than the antenna, and have with the concentric configuration of the center axis of the substrate support part Ring-shaped coil;Direct current power supply, the coil of the electromagnet is supplied with power;And control unit, the control unit is in the range of 356 to 600 to the diameter power supply control, the ampere turns number is the coil of the electromagnet and the current that flows through the coil of the electromagnet The product of the number of turns.

A base disposed in a plasma processing chamber. An electrostatic chuck disposed on an upper portion of the base, the electrostatic chuck including a first part and a second part. A first heater electrode layer group including at least one heater electrode layer disposed in the first part. A second heater electrode layer group including at least one heater electrode layer disposed in the second part. A power source is electrically connected to the first heater electrode layer group and the second heater electrode layer group. A controller configured to periodically and sequentially supply DC current from the power source to heater electrode layers included in the first heater electrode layer group and heater electrode layers included in the second heater electrode layer group.

The present disclosure provides radio frequency (RF) return devices and processing chambers thereof. The RF devices include a bracket mechanically coupled to a substrate support, a first mounting plate, and a mounting base. A cover plate is mechanically coupled to the first mounting plate and the mounting base. A base plate is disposed over the mounting base. A plurality of stacking plates is disposed between the first mounting plate and the base plate. A strap is mechanically coupled to the mounting base. A second mounting base is mechanically coupled to the strap

This invention provides a plasma treatment method capable of forming a deposited film on the walls of a processing chamber and suppressing the diffusion of contaminants into a transport system. The plasma treatment method for plasma treating samples placed on a sample stage within a processing chamber includes: a first step of removing deposits in the processing chamber using plasma; a second step of depositing deposits in the processing chamber using a mixture of hydrofluorocarbon gas and argon (Ar) gas after the first step; a third step of selectively removing deposits from the sample stage using a mixture of oxygen (O2) gas and argon (Ar) gas after the second step; and a fourth step of plasma treating a predetermined number of samples after the third step.

Provided is a plasma processing method and device capable of controlling the etching mask shape during a single-step process that etches a target material disposed below the etching mask. The plasma processing method includes performing selective deposition on the etching mask in separate phases, which are controlled via a periodic bias voltage signal. By tuning the bias voltage power, duration and timing, the mask height and width can be controlled and stabilized while etching on the substrate proceeds. Thus, the present method provides an etching process that allows fine control of the etching mask shape for small pattern sizes and provides high etching selectivity through deposition.

A particle monitoring system includes a light emitting device for irradiating an inside of a plasma processing apparatus with light, and a monitoring device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a base substrate, a plurality of imaging devices, and a control device. The base substrate has a plate shape. The plurality of imaging devices have optical axes facing upward on the base substrate, and are disposed apart from each other to capture images including scattered light from the particle irradiated with the light. The control device discriminates the particle in the images captured by the plurality of imaging devices.

The application discloses a packaging method of a double-face bump packaging chip, which solves the defects of easy oxidation and electric leakage of the double-face bump chip, and ensures the quality and working stability of the double-face bump packaging chip. The method is characterized in that: after the wafer front surface operation is completed, the wafer front surface is reversely arranged after being bonded with glass, then the Si surface of the wafer back surface is ground and stress is released, then a SiO2 layer is formed on the surface of the Si layer, then a Ti / Cu layer is sputtered on the surface of the SiO2 layer, then the Cu is electroplated on the surface of the Ti / Cu layer to form an electroplated Cu layer, then the RDL corresponding to the pattern is formed on the wafer back surface through photoetching, then the Ti / Cu layer etching and the adhesive removing operation are carried out through photoetching, the back surface Cu manufacturing is completed, after the back surface Cu operation is completed, the wafer back surface is treated by plasma, then the RDL surface is protected by electroplating, after being reversely arranged again, the glass and the wafer are separated by UV light, and the complete single chip is formed by mechanical cutting.

The utility model discloses a kind of production devices for rapidly improving material surface adhesion, including box, the plasma processing spray head is electrically connected with plasma generator, the first screw rod slider upper end is fixedly connected with clamping block, the pretreatment bin lower end is equipped with wastewater bin, and wastewater bin one side lower end is connected with water outlet, the water outlet middle is connected with on-off valve, the electric rotating shaft, plasma generator, spray washing head, positive and negative tooth screw rod mechanism, second screw rod mechanism, servo motor and three-axis moving mechanism are electrically connected with PLC controller.The production device for rapidly improving material surface adhesion can be sprayed and washed by pretreatment bin and spray washing head, and the treatment effect is better, and can be quickly sealed switching by partition, and can be quickly automatically regulated by movable support plate, and can be extended outside box by second screw rod mechanism and second screw rod slider, conveniently loading and unloading operation, convenient to use.

This utility model belongs to the technical field of plasma treatment machines, and provides an air duct, an electrode cleaning mechanism, and a plasma treatment machine. A first air duct plate is provided between a first connecting member and a second connecting member, and a second air duct plate is provided on the first air duct plate via a first rotating connecting member. By opening the second air duct plate, the entire interior of the air duct can be cleaned. Compared with the method of flipping and setting cover plates on both sides of the electrode assembly, the opening and closing operation time is shortened. At the same time, the first rotating connecting member includes a first connecting plate and a second connecting plate detachably provided on the first connecting plate. The first connecting plate is provided on the first air duct plate, and the second connecting plate is provided on the second air duct plate. When the second air duct plate needs to be disassembled, it is only necessary to disassemble and install the second connecting plate together with the second air duct plate on the first air duct plate, which is convenient and improves efficiency.

A lower electrode assembly and its plasma processing apparatus are disclosed. The lower electrode assembly includes: a base, comprising: a substrate temperature control component and a radio frequency transmission layer wrapped around the outer surface of the substrate temperature control component; the substrate temperature control component has a cooling channel, and the material of the substrate temperature control component has a first coefficient of thermal expansion; the material of the radio frequency transmission layer has a second coefficient of thermal expansion, the second coefficient of thermal expansion being greater than the first coefficient of thermal expansion, and the radio frequency transmission layer is a conductive material; and a ceramic layer disposed above the base for supporting the substrate. The lower electrode assembly, while satisfying radio frequency transmission and substrate temperature control, can reduce the possibility of damage to the lower electrode assembly.

This invention belongs to the field of secondary battery cathode material recycling technology. More specifically, it relates to a plasma-sulfate combined method for recycling ternary battery cathode materials. The specific recycling method of this invention includes: immersing the cathode sheet in the solvent N-methylpyrrolidone, ultrasonically treating it to separate the active material layer on the cathode sheet surface from the current collector aluminum foil, sieving to remove the separated current collector aluminum foil, obtaining the cathode material; transferring the cathode material into a microwave reactor, heating it to 450-500℃ in a nitrogen atmosphere, holding the temperature for 10-20 minutes, cooling, and discharging to obtain pyrolysis material; transferring the pyrolysis material to a plasma chamber, using a reducing gas as plasma, and plasma treating it for 20-30 minutes under conditions of a gas pressure of 50-60 Pa and a radio frequency power of 480-550 W to obtain reduced material; using a compound acid leaching solution as the leaching solution, mixing it with the reduced material, and acid leaching for 45-80 minutes to obtain the leaching solution.

A disclosed etching method includes (a) preparing a substrate on a substrate support in a chamber. The substrate includes a multilayer film including a plurality of first films and a plurality of second films that are alternately stacked with the plurality of first films, and a mask disposed on the multilayer film. The etching method further includes (b) etching one or more first films among the plurality of first films. The etching method further includes (c) etching one or more second films among the plurality of second films. In each of the (b) and (c), a pulse of a source radio frequency power for plasma generation and a pulse of an electric bias for ion attraction are intermittently or periodically supplied.

This invention belongs to the field of photon counting detector manufacturing technology, specifically relating to a plasma treatment method for the crystal surface of a photon counting detector and the resulting photon counting detector. The treatment method employs a step-by-step plasma surface modification process. First, the crystal wafer surface is bombarded with plasma generated by the ionization of an inert gas. Then, a secondary bombardment is performed using plasma generated by the ionization of reactive gases such as oxygen and hydrogen. Simultaneously, key process conditions such as process gas flow rate, wafer orientation bias, processing time, cavity vacuum, radio frequency power, plasma parameters, and wafer spacing are systematically controlled. This step-by-step modification process achieves nanoscale modification of the crystal surface, effectively repairing surface damage caused by processing and forming a uniformly distributed surface modification layer. Photon counting detectors fabricated using this method can significantly reduce device leakage current, improve withstand voltage performance, optimize energy resolution, and improve photon counting rate and counting stability.

A plasma processing method includes (a) providing a substrate on a substrate support in a chamber, the substrate having an underlying film, a first film on the underlying film, and a second film on the first film, the first film and the second film providing an opening exposing the underlying film, the second film comprising silicon; and (b) removing the second film by plasma generated from a process gas without supplying an electrical bias to the substrate support or by supplying an electrical bias having a level of 200 W or less, or 1 kV or less to the substrate support, the plasma comprising a hydrogen fluoride etchant.

The application discloses an electro-catalysis-plasma coupling device for recovering elemental nickel from chemical nickel waste liquid and relates to the technical field of wastewater treatment. The device comprises a movable box body, an electrolysis unit and a plasma treatment unit arranged in the movable box body. The device integrates electrolysis, plasma, temperature control and circulation in the movable box body, has a compact structure, is convenient to transport and deploy on site, and is suitable for various scenes such as laboratories, electroplating workshops and wastewater treatment stations. A heating device is arranged in the electrolytic tank to heat and maintain the electrolyte in a target temperature range. A plasma generator is arranged to perform plasma quenching treatment on the electrolyte during electrolysis, significantly improve the concentration of free nickel ions in the electrolyte, improve the electrodeposition effect, and control the wastewater to quickly reach the electrolysis water level through the overflow port, the stainless steel rod, the magnetic pump, the check valve and the distribution box. The discharged electrolyte can be sent back to the electrolytic tank for re-electrodeposition by changing the placement of the water inlet pipe, thereby improving the recovery amount of nickel.

Provided is a plasma processing method capable of achieving flat etching process while suppressing vertical etching.The plasma processing method for plasma-etching a titanium nitride (TiN) film that forms a metal gate and contacts an insulating film on both sides includes the step of etching the titanium nitride (TiN) film by using plasmas that are generated by using a mixed gas of boron trichloride (BCl3) gas, nitrogen (N2) gas, and nitrogen trifluoride (NF3) gas and are generated by radio-frequency power modulated by a pulse, wherein the pulse has a first period with a first amplitude as its amplitude and a second period with a second amplitude as its amplitude and wherein the second amplitude is greater than 0 and less than the first amplitude.

The application relates to the technical field of wafer processing equipment, in particular to a high-hydrogen process reaction chamber and a plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage and an ignition device; the quartz tube is arranged at the top of a processing chamber; the Faraday shield cage is annularly arranged between the quartz tube and the induction coil, a plurality of slits extending through the side wall of the Faraday shield cage and along the axial direction are formed in the Faraday shield cage; the ignition device is arranged in at least one slit and connected with a radio frequency power source to input a first radio frequency energy to make the process gas in the quartz tube be broken down and ignited to form an initial plasma; the induction coil is annularly arranged outside the quartz tube and connected with the radio frequency power source to input a second radio frequency energy for generating an alternating magnetic field, and the alternating magnetic field enters the quartz tube through the slits to maintain or increase the ignited plasma; the application successfully solves the problem of ignition difficulty caused by the existence of the Faraday shield cage.

Provided are an upper electrode assembly which fixes an electrode plate to a holding plate, and a plasma processing device.　This upper electrode assembly is used in a plasma processing device. The upper electrode assembly comprises: a holding plate having a through-hole; an electrode plate having an insertion groove; a bush having a female screw structure part having a fastening groove, and a hook structure part for preventing falling out from the insertion groove when fitted in the insertion groove; and a male screw member inserted into the through-hole and screwed with the fastening groove of the female screw structure part to fix the electrode plate to the holding plate.

A plasma processing method in which a gate is cut by selectively etching a gate film stack including a gate oxide film, a work function metal, and a gate embedding metal with respect to a gate sidewall spacer and an interlayer insulating film of a source-drain region. A metal layer including a work function metal and a gate embedding metal is subjected to vertical etching along a gate cut mask, and then a protective insulating film is formed on a side wall of the metal layer. This is repeated a plurality of times using different protective film materials. A step of removing residues of the work function metal or the gate embedding metal is interposed between repetitions as necessary, and a gate insulating film exposed at the bottom of the cut region can be removed while the work function metal and the gate embedding metal.

A matching device disclosed herein comprises a plurality of reactance elements, a plurality of relays, a ground element, and an inductor element. The plurality of reactance elements are connected to a high frequency supply line for high frequency power for plasma generation. The plurality of relays include a relay coil and a relay switch each having a first contact connected to each of the plurality of reactance elements. A second contact different from the first contacts of some relay switches among the plurality of relay switches is connected to the ground element. A third contact different from the first contacts of the remaining relay switches among the plurality of relay switches is connected to the inductor element and is connected to the high frequency supply line. The plurality of reactance elements include a lower electrode, a dielectric plate, a plurality of first upper electrodes, and a plurality of second upper electrodes.

The utility model discloses a winding and unwinding integrated base material surface treatment equipment, including unwinding area, processing area, winding area, unwinding area includes the unwinding motor module of bearing product material roll, and product material roll is the double -layer protection mould middle bearing base material mechanism, and corresponding unwinding motor module is provided with film tearing axle, processing area includes a plurality of groups corresponding electrode plate module, and each group motor plate module is by corresponding setting upper electrode plate and lower electrode plate constitutes, and the upper electrode plate and lower electrode plate form the plasma processing area between, and each group electrode plate module is inclined setting, and a plurality of groups electrode plate module combination forms the arc shape plasma processing area setting structure, the upper electrode plate and lower electrode plate of each group electrode plate module are all provided with the guide roller, and each guide roller is located the 1 / 2-2 / 3 interval between corresponding upper electrode plate and lower electrode plate.

A substrate bonding system may include: a plasma processing apparatus; a cleaning apparatus configured to clean a substrate provided from the plasma processing apparatus; and a bonding apparatus configured to perform a direct bonding method that bonds two substrates to each other. The plasma processing apparatus may include: a plasma process chamber including a process space; a load lock chamber connected to the process space; a process gas supply configured to supply a process gas to the process space; and an H2O supply configured to supply H2O to the process space.

A power supply system of a plasma processing apparatus disclosed in the present invention includes a high-frequency power supply, a bias power supply, and a power supply control section. The high-frequency power supply generates high-frequency electric power for plasma generation. The bias power supply supplies electric bias to a substrate support section. The power supply control section determines the frequency of the high-frequency electric power in each of a plurality of designated phase periods among a plurality of phase periods within a waveform period for the electric bias, so as to suppress reflection of the high-frequency electric power. The power supply control section determines the frequency of the high-frequency electric power in each of the phase periods other than the plurality of designated phase periods among the plurality of phase periods, by using an interpolation of the frequencies of the high-frequency electric power in each of the plurality of designated phase periods.

This application relates to the field of battery manufacturing technology and discloses an electrode plasma treatment apparatus and electrode processing equipment. The electrode plasma treatment apparatus includes a housing, an unwinding mechanism, a winding mechanism, at least one adjusting roller, and at least one plasma generator. The plasma generator includes a nozzle for surface treatment of the electrode sheets laid on the adjusting roller. In the technical solution of this application embodiment, electrode vibration can be reduced, making the plasma surface treatment of the electrode sheets more uniform, improving the surface treatment effect of the electrode sheets, and ensuring that the surface quality of the electrode sheets meets the requirements.