3232 results about "Plasma processing" patented technology

A system includes a processing chamber configured to perform a plasma process with respect to one or more substrates. The system further includes an electrostatic chuck disposed within the processing chamber. The electrostatic chuck includes one or more electrodes. The system further includes an analog filter electrically coupled to at least one electrode of the one or more electrodes. The analog filter includes an air-core coil including a first coil and a second coil disposed within the first coil. The first coil and the second coil together form an inductor.

Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to an apparatus for processing a substrate in a plasma processing system. The apparatus generally includes: an impedance for a match circuit configured to perform impedance matching for a plasma load; a diode-based switch coupled to the impedance for the match circuit; at least one signal generator coupled to the diode-based switch and configured to bias the diode-based switch to a first position based on a first impedance generated in the plasma load; and a second position based on a second impedance generated in the plasma load and an RF signal generator configured to provide an RF signal to the plasma load.

A method of processing a substrate. The method including delivering, by an RF generator, an RF signal to a processing volume of a processing chamber through an RF match including a configurable impedance altering element. Measuring in real-time, an electrical characteristic of the RF signal. Determining in real-time, a target electrical characteristic based upon a comparison between a calibrated electrical characteristic value and the measured electrical characteristic, in which the calibrated electrical characteristic value is selected to achieve at least one desired plasma processing parameter result. Adjusting in real-time, a setting of the configurable impedance altering element of the RF match to achieve the target electrical characteristic and maintaining, the target electrical characteristic by controlling the setting of the configurable impedance altering element of the RF match.

The invention discloses a carbon fiber composite material surface modification spraying system and a control method thereof. The system comprises a multi-axis robot, a plasma spray gun, a contact angle measuring probe, a 3D line laser scanner, a hyperspectral imager, an environment sensor and a controller. According to the method, the plasma power and the robot speed are adjusted in real time through contact angle measurement and plasma treatment feedback control, so that the CFRP surface can accurately reach a target value, and the coating adhesive force is improved; 3D line laser scanning and hyperspectral imaging are combined, and the posture, the distance, the wet film thickness and the component uniformity of the spray gun are monitored in real time; based on a prediction model fusing a physical model and a neural network, a self-adaptive fuzzy PID control algorithm is adopted, and the coating flow and the track posture of a spray gun are accurately regulated and controlled in real time. The problems of weak coating binding force, uneven thickness, orange peel, sagging and serious coating waste in traditional spraying are effectively solved, and self-adaptive, high-quality and green spraying of workpieces with complex curved surfaces is achieved.

A plasma processing system includes a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency. The plasma processing system includes a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency. The plasma processing system includes a junction box enclosure electrically coupling the pulsed voltage source to a direct current conductor coupled to a substrate support and further electrically coupling the pulsed voltage source to a radio frequency conductor coupled to a radio frequency baseplate. The junction box enclosure includes a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor and operable to filter the pulsed voltage waveform. The junction box enclosure further includes a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor and operable to filter the radio frequency waveform.

Embodiments of the disclosure include apparatus (e.g., plasma processing systems) and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a method for waveform generation, which generally includes delivering a radio frequency (RF) waveform at a frequency for a first period of time using a RF generator and then halting the delivery of the RF waveform for a second period of time, and delivering a pulsed voltage waveform at a first voltage for at least a portion of a third period of time using a pulser, wherein the delivery of the pulsed voltage waveform overlaps with the delivery of the RF waveform during a portion of the second period of time.

In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

The invention discloses a microporous diaphragm for a low-electrical-impedance lithium battery and a preparation method of the microporous diaphragm. The diaphragm comprises: a base film layer, wherein the base film layer is of a microporous structure formed by biaxially stretching polypropylene and / or polyethylene; the surface of the base film layer is coated with the functional coating, and the functional coating contains mixed slurry of inorganic nanoparticles and a binder; the surface modification layer is formed by introducing a hydrophilic electrolyte group on the surface of the functional coating through plasma treatment or chemical grafting. The base membrane layer forms a uniform micropore structure through a two-way stretching process, the functional coating is formed by compounding nano silicon dioxide or aluminum oxide and polyvinylidene fluoride according to a specific proportion, a porous layer with gradient pore diameter is formed, the pore size of the porous layer is smaller than that of the base membrane layer, and efficient permeation of electrolyte is ensured. Electrolyte-philic groups such as sulfonic groups are introduced into the surface modification layer, so that the wettability of the diaphragm to an electrolyte is remarkably improved. During preparation, the base membrane is formed through melt blending, two-way stretching and pore-forming agent extraction, and then the functional layer is constructed through slurry coating and a low-temperature plasma treatment or sulfonation process. The diaphragm combines gradient aperture design, inorganic filler enhancement and surface chemical modification, and realizes low impedance, high thermal stability and excellent mechanical strength.

A plasma processing apparatus includes a chamber, a substrate support, a gas supplier for supplying gas into the chamber, a radio-frequency power supply for supplying a source radio-frequency power to generate plasma, and a bias power supply for generating electric bias. During a first processing period, the radio-frequency power supply uses frequencies, which are included in a first frequency set determined to reduce a degree of reflection of the source radio-frequency power from a load, as source frequencies of the source radio-frequency power for each of phase periods in a waveform period of the electric bias. During a second processing period, the radio-frequency power supply uses frequencies, which are included in a second frequency set different from the first frequency set and determined to reduce the degree of reflection, as the source frequencies for each of the phase periods.

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

A plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and holds a plurality of substrates in a plurality of tiers, a rotating shaft capable of rotating the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhaust unit that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container and positioned to face each other with respect to a center of the processing container, and a radio-frequency power supply that applies a radio-frequency power to the pair of the electrodes, thereby generating a capacitively-coupled plasma in the processing container. The substrate holder includes a ring member that holds a substrate, and surrounds a radial outer side of the substrate in a plan view.

The invention relates to the technical field of wafer processing, in particular to a reaction chamber and plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage, a state monitoring device, a rotation driving device and a control unit, and is characterized in that the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged around the outer side of the quartz tube; the Faraday shielding cage is provided with a slit, and the orthographic projection of the slit on the circumferential wall of the quartz tube forms an erosion area; the state monitoring device is used for monitoring the erosion area; the driving end of the rotary driving device is connected with the quartz tube or the Faraday shielding cage; the control unit is in communication connection with the state monitoring device and the rotary driving device; according to the invention, through real-time monitoring and an active regulation and control mechanism, the problem of concentrated erosion of plasma to the quartz tube in a high-hydrogen process is effectively solved.

The invention provides a surface modified carbon fiber as well as a preparation method and application thereof, and belongs to the technical field of battery materials. Physical or chemical treatment on the surface of the carbon fiber is realized by performing one or more of accurate plasma treatment, chemical etching, coupling agent treatment and nano particle deposition on the surface of the carbon fiber, so that functional groups are introduced or a rough nano structure is formed; a functional layer with a specific functional group and a rough structure which are beneficial to attachment of positive electrode material slurry are formed on the surface of the carbon fiber, and then a stable and well-attached surface modified layer is obtained through heat treatment, so that the surface modified carbon fiber is prepared. According to the method disclosed by the invention, the surface roughness and the functional group richness can be improved on the premise that the mechanical property of the fiber is not obviously damaged, so that the adhesiveness and the electrical property of the positive electrode material slurry are enhanced, and a foundation is laid for the preparation of a carbon fiber positive electrode material and a structure-energy storage integrated composite structure.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and plasma processing equipment, and the reaction cavity comprises a quartz tube; the first coil surrounds the outer side of the quartz tube and is connected with an external radio frequency power supply; the Faraday shielding cage is annularly arranged outside the quartz tube and between the quartz tube and the first coil, and a plurality of slits which penetrate through the side wall of the Faraday shielding cage and extend in the axial direction are formed in the Faraday shielding cage; the blocking piece is arranged in the quartz tube, and a structure formed by orthographic projection of the blocking piece on the circumferential side wall of the Faraday shielding cage covers a structure formed by orthographic projection of the first coil on the circumferential side wall of the Faraday shielding cage; the blocking piece is arranged in the quartz tube, so that concentrated bombardment of plasma generated in the high-hydrogen process on the inner wall of the quartz tube can be effectively blocked, the problems of erosion of the quartz tube and particle stripping are remarkably relieved, the process yield of plasma processing equipment is increased, and the service life of a machine table is prolonged.

A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply system. The substrate support is in the chamber and includes a central portion on which a substrate is placeable. The radio-frequency power supply generates source radio-frequency power. The bias power supply system respectively provides first electrical bias energy and second electrical bias energy to a first electrode and a second electrode. The first electrode is at least in the central portion of the substrate support. The second electrode is in an outer portion located outward from the central portion in a radial direction that is radial from a center of the central portion. The bias power supply system adjusts the first and second electrical bias energy to increase electric field strength above one of the central portion or the outer portion earlier than electric field strength above the other portion.

The invention relates to the technical field of electrochromism coating, in particular to an electrochromism device coating process and method, and the electrochromism device coating process comprises the following steps: step 1, substrate pretreatment: cleaning attachments on the surface of a flexible substrate through ultrasonic cleaning and plasma treatment; step 2, conducting layer deposition treatment: depositing an indium tin oxide (ITO) conducting layer on the substrate at the deposition temperature of 100-380 DEG C, the thickness of 200-350 nm and the vacuum degree of less than or equal to 10 <-5 > Pa; step 3, electrochromic layer deposition treatment: sequentially depositing a tungsten oxide (WO3) layer and a nickel oxide (NiO) layer through a magnetron sputtering process, and controlling the film thickness ratio of NiO to WO3 to enable the ratio of NiO / W to be 0.25-0.357; 4, annealing treatment is conducted, specifically, annealing is conducted for the first time at the temperature of 200-500 DEG C, and the annealing time is 200-300 seconds; and secondary annealing is conducted, specifically, annealing is conducted at the temperature of 400 DEG C, and the annealing time ranges from 200 seconds to 800 seconds. The effect of improving the yellow ground color of the electrochromic device is achieved.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity and plasma processing equipment, comprising a quartz tube, an induction coil and a shielding member, the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged on the outer side of the quartz tube in a surrounding manner and comprises a plurality of annular sections which are arranged at intervals in the axial direction of the quartz tube and a plurality of connecting sections which are arranged between every two adjacent annular sections and are used for connecting every two adjacent annular sections; the shielding component is annularly arranged between the quartz tube and the induction coil and comprises a plurality of annular shielding parts arranged in the axial direction of the quartz tube and a plurality of arc-shaped shielding parts arranged between every two adjacent annular shielding parts and used for connecting every two adjacent annular shielding parts; a slit is formed between two adjacent annular shielding parts; concentrated bombardment of high-energy ions on the inner wall of the quartz tube can be obviously prevented, so that erosion of the quartz tube is effectively reduced, particulate matter is reduced, the service life of a machine is prolonged, and the process yield is increased.

A plasma processing apparatus includes a processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhaust unit that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container and positioned to face each other, a radio-frequency power supply that applies a radio-frequency power to the pair of the electrodes, thereby generating a capacitively-coupled plasma in the processing container, an inner tube provided in the processing container and having an opening, a substrate holder that is inserted into the inner tube and holds a plurality of substrates, a rotating shaft that supports the substrate holder, a rotation mechanism that rotates the rotating shaft, and an elevation mechanism that raises or lowers the rotating shaft. The substrate holder includes a ring member that holds a substrate, and surrounds a radial outer side of the substrate in a plan view.

The utility model discloses an impedance matcher, a radio frequency assembly and plasma processing equipment. Each impedance matcher comprises an impedance matching network and a control unit, at least one impedance matcher is electrically connected between the radio frequency source and the load end through a radio frequency link, and the impedance matching network is electrically connected with the control unit through a high-speed communication bus, the radio frequency source is electrically connected with the control unit through a high-speed communication bus, and the load end is electrically connected with the control unit through a high-speed communication bus. The impedance matching network, the control unit, the radio frequency source and the load end are provided with industrial Ethernet control automation technology ports and / or gigabit transmit-receive interfaces, so that the high-speed communication bus carries out high-speed signal transmission, and the delay is obviously reduced.

A substrate processing system comprising: a plasma processing apparatus; a depressurization transfer device having a transfer robot and an edge ring; and a controller is disclosed. The plasma processing apparatus includes: a depressurizable processing chamber; a substrate support table; a lifting mechanism; a gas supply part; and a plasma generating part. The controller controls following steps to be performed in following order: (a) performing plasma processing on the substrate and, then, applying a voltage of a first polarity to the electrode; (b) neutralizing the edge ring, by applying a voltage of a second polarity to the electrode while supplying a gas, and stopping the application of the voltage to the electrode after a predetermined period of time elapses; (c) separating the edge ring from a ring placing surface of the substrate support table; and (d) transferring the edge ring from the processing chamber to the depressurization pressure transfer device.

The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a process cavity with a controllable gas flow field and plasma processing equipment, and the process cavity comprises a cavity body which is provided with a cavity for bearing a wafer; the air inlet channel is communicated with the cavity; the main air exhaust channel is arranged at the bottom of the cavity body and is communicated with the cavity; the main air exhaust channel is connected with a main control valve; the auxiliary air exhaust channel is arranged on the side wall of the cavity body and is communicated with the cavity; the main control valve and the auxiliary control valve work cooperatively. The control device is in communication connection with the main control valve and the auxiliary control valve; through the cooperation of the auxiliary air exhaust channel and the auxiliary control valve and the cooperation of the main air exhaust channel and the main control valve, the flow field distribution in the process cavity is adjusted, the gas concentration gradient and the edge dead zone in the radial direction of the wafer are guided to be eliminated, and the consistency of the side face angle, the surface roughness center area and the edge area of the outer ring groove or hole of the wafer is achieved.

The invention discloses a ceramic rock plate with a decorative effect and a production process thereof, and belongs to the technical field of ceramics. The rock plate is composed of a green body layer, a ground glaze layer, a cover glaze layer and an ink jet pattern layer, and after firing, a micro-nano rough and low-surface-energy synergistic protection layer is formed through oxygen-nitrogen plasma activation, a hydrothermal reaction of aluminum salt and an ammonia source compound, high-temperature calcination and silane derivative dipping and curing. The green body takes wollastonite, quartz sand and the like as raw materials, and the ground glaze and the cover glaze adopt a feldspar-quartz-nepheline system; after firing, performing plasma treatment and hydrothermal treatment to generate needle-shaped aluminum oxide, and introducing a silane derivative to realize double functions of super-hydrophobicity and wear resistance. Compared with the prior art, the anti-fouling and wear-resistant coating reaches the national standard 5 level, the process is simple, and the coating can be directly connected to an existing production line and is suitable for high-end wall floor decoration.

A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

The invention discloses a method for adjusting a TS-1 molecular sieve through a plasma treatment technology and application, and relates to the technical field of TS-1 molecular sieve treatment. The method comprises the following steps: S1, preprocessing a TS-1 sample; s2, selecting treatment gas, and presetting treatment conditions; s3, plasma treatment equipment is selected, and the pretreated TS-1 sample is laid according to a certain thickness; s4, processing according to a preset processing condition; and S5, post-processing and testing. The invention discloses a method for adjusting a TS-1 molecular sieve by a plasma treatment technology and application of the TS-1 molecular sieve, and the treated modified TS-1 molecular sieve has advantages in a Beckmann rearrangement reaction compared with a parent conversion rate and selectivity; loaded metals such as copper, cobalt and iron are used for a carbon dioxide and hydrogen reduction reaction, and compared with a matrix, the conversion rate and methanol selectivity are higher; the supported metals such as copper, cobalt, indium, platinum and palladium are used for photocatalytic reaction of carbon dioxide and water, and compared with a parent, the conversion rate and alcohol selectivity are higher.

A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plasma in the processing chamber as part of a recipe performed on a substrate during etch or deposition processes. Between processes, the controller may cause the same RF source to generate a second RF signal that is instead routed by the switching element to inductive coils to generate an inductively coupled plasma for a cleaning process to remove film deposits on the interior of the plasma processing chamber.

The invention relates to the technical field of preparation of medical supplies, in particular to a surgical membrane and a preparation process. During specific use, firstly, a polyurethane base membrane is selected and subjected to plasma treatment; spraying a nano SiO2 dispersion liquid containing a photoinitiator on the surface of the treated polyurethane base film, and then performing ultraviolet patterning irradiation to form a micro-bulge structure to obtain a base material layer; projecting the colloidal fluid to a temperature gradient mask through a digital micromirror device, so that the colloidal fluid is subjected to regional thermal polymerization on the substrate layer to form an intelligent adhesive layer with viscosity gradient; by adopting an aerosol jet printing technology, super absorbent fibers and polyvinyl alcohol-borax dynamic crosslinking hydrogel are co-deposited to form a drainage layer, so that the technical problems that a surgical membrane prepared by a surgical membrane preparation mode in the prior art is inflexible in adhesion and poor in surface structure performance, and a preparation process is difficult to accurately control are solved.

To provide a method for performing gap filling of a feature on a substrate, and a gas supply system for supplying a process gas to a process chamber for an ALD process and plasma processing.SOLUTION: A method for performing gap fill of a feature on a substrate includes the following operations: (a) moving the substrate into a process chamber; (b) performing a plurality of cycles of an ALD process; (c) purging process gases from the ALD process from the process chamber; (d) performing a plasma treatment on the substrate by introducing a fluorine- containing gas into the process chamber and applying RF power to the fluorine-containing gas to generate a fluorine plasma in the process chamber; (e) purging process gases from the plasma treatment from the process chamber; (f) repeating the operations (b) through (e) until a predefined number of cycles are performed.SELECTED DRAWING: Figure 4