1749 results about "Plasma processing" patented technology

The invention discloses a carbon fiber composite material surface modification spraying system and a control method thereof. The system comprises a multi-axis robot, a plasma spray gun, a contact angle measuring probe, a 3D line laser scanner, a hyperspectral imager, an environment sensor and a controller. According to the method, the plasma power and the robot speed are adjusted in real time through contact angle measurement and plasma treatment feedback control, so that the CFRP surface can accurately reach a target value, and the coating adhesive force is improved; 3D line laser scanning and hyperspectral imaging are combined, and the posture, the distance, the wet film thickness and the component uniformity of the spray gun are monitored in real time; based on a prediction model fusing a physical model and a neural network, a self-adaptive fuzzy PID control algorithm is adopted, and the coating flow and the track posture of a spray gun are accurately regulated and controlled in real time. The problems of weak coating binding force, uneven thickness, orange peel, sagging and serious coating waste in traditional spraying are effectively solved, and self-adaptive, high-quality and green spraying of workpieces with complex curved surfaces is achieved.

A plasma processing system includes a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency. The plasma processing system includes a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency. The plasma processing system includes a junction box enclosure electrically coupling the pulsed voltage source to a direct current conductor coupled to a substrate support and further electrically coupling the pulsed voltage source to a radio frequency conductor coupled to a radio frequency baseplate. The junction box enclosure includes a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor and operable to filter the pulsed voltage waveform. The junction box enclosure further includes a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor and operable to filter the radio frequency waveform.

The invention relates to the technical field of wafer processing, in particular to a reaction chamber and plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage, a state monitoring device, a rotation driving device and a control unit, and is characterized in that the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged around the outer side of the quartz tube; the Faraday shielding cage is provided with a slit, and the orthographic projection of the slit on the circumferential wall of the quartz tube forms an erosion area; the state monitoring device is used for monitoring the erosion area; the driving end of the rotary driving device is connected with the quartz tube or the Faraday shielding cage; the control unit is in communication connection with the state monitoring device and the rotary driving device; according to the invention, through real-time monitoring and an active regulation and control mechanism, the problem of concentrated erosion of plasma to the quartz tube in a high-hydrogen process is effectively solved.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and plasma processing equipment, and the reaction cavity comprises a quartz tube; the first coil surrounds the outer side of the quartz tube and is connected with an external radio frequency power supply; the Faraday shielding cage is annularly arranged outside the quartz tube and between the quartz tube and the first coil, and a plurality of slits which penetrate through the side wall of the Faraday shielding cage and extend in the axial direction are formed in the Faraday shielding cage; the blocking piece is arranged in the quartz tube, and a structure formed by orthographic projection of the blocking piece on the circumferential side wall of the Faraday shielding cage covers a structure formed by orthographic projection of the first coil on the circumferential side wall of the Faraday shielding cage; the blocking piece is arranged in the quartz tube, so that concentrated bombardment of plasma generated in the high-hydrogen process on the inner wall of the quartz tube can be effectively blocked, the problems of erosion of the quartz tube and particle stripping are remarkably relieved, the process yield of plasma processing equipment is increased, and the service life of a machine table is prolonged.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity and plasma processing equipment, comprising a quartz tube, an induction coil and a shielding member, the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged on the outer side of the quartz tube in a surrounding manner and comprises a plurality of annular sections which are arranged at intervals in the axial direction of the quartz tube and a plurality of connecting sections which are arranged between every two adjacent annular sections and are used for connecting every two adjacent annular sections; the shielding component is annularly arranged between the quartz tube and the induction coil and comprises a plurality of annular shielding parts arranged in the axial direction of the quartz tube and a plurality of arc-shaped shielding parts arranged between every two adjacent annular shielding parts and used for connecting every two adjacent annular shielding parts; a slit is formed between two adjacent annular shielding parts; concentrated bombardment of high-energy ions on the inner wall of the quartz tube can be obviously prevented, so that erosion of the quartz tube is effectively reduced, particulate matter is reduced, the service life of a machine is prolonged, and the process yield is increased.

The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a process cavity with a controllable gas flow field and plasma processing equipment, and the process cavity comprises a cavity body which is provided with a cavity for bearing a wafer; the air inlet channel is communicated with the cavity; the main air exhaust channel is arranged at the bottom of the cavity body and is communicated with the cavity; the main air exhaust channel is connected with a main control valve; the auxiliary air exhaust channel is arranged on the side wall of the cavity body and is communicated with the cavity; the main control valve and the auxiliary control valve work cooperatively. The control device is in communication connection with the main control valve and the auxiliary control valve; through the cooperation of the auxiliary air exhaust channel and the auxiliary control valve and the cooperation of the main air exhaust channel and the main control valve, the flow field distribution in the process cavity is adjusted, the gas concentration gradient and the edge dead zone in the radial direction of the wafer are guided to be eliminated, and the consistency of the side face angle, the surface roughness center area and the edge area of the outer ring groove or hole of the wafer is achieved.

The invention relates to the technical field of preparation of medical supplies, in particular to a surgical membrane and a preparation process. During specific use, firstly, a polyurethane base membrane is selected and subjected to plasma treatment; spraying a nano SiO2 dispersion liquid containing a photoinitiator on the surface of the treated polyurethane base film, and then performing ultraviolet patterning irradiation to form a micro-bulge structure to obtain a base material layer; projecting the colloidal fluid to a temperature gradient mask through a digital micromirror device, so that the colloidal fluid is subjected to regional thermal polymerization on the substrate layer to form an intelligent adhesive layer with viscosity gradient; by adopting an aerosol jet printing technology, super absorbent fibers and polyvinyl alcohol-borax dynamic crosslinking hydrogel are co-deposited to form a drainage layer, so that the technical problems that a surgical membrane prepared by a surgical membrane preparation mode in the prior art is inflexible in adhesion and poor in surface structure performance, and a preparation process is difficult to accurately control are solved.

The invention discloses a multi-mode magnetic field intelligent closed-loop plasma confinement system and method. The system comprises a multi-mode magnetic field generation module, a multi-dimensional plasma diagnosis module and a layered intelligent closed-loop control module. The multi-mode magnetic field generation module generates a steady-state, pulse and alternating composite magnetic field to realize adjustable space gradient; the multi-dimensional diagnosis module synchronously acquires electrical, optical and particle parameters, and ensures the accuracy through data fusion; and the hierarchical intelligent closed-loop control module generates an adjusting instruction to realize closed-loop optimization based on dynamic threshold and multi-algorithm scheduling. According to the method, the constraint performance is improved through the steps of initialization, data acquisition, state evaluation and closed-loop adjustment in combination with parameter self-optimization and three-level fault protection. According to the scheme, the plasma constraint time exceeds 300 s, the escape rate is lower than 5%, the adjustment response is smaller than or equal to 10 ms, the method adapts to multiple working conditions and can be popularized to the fields of nuclear fusion experiments and plasma processing, and the problems that a traditional system is poor in stability and lags in response are solved.

The invention discloses an instrument capable of being separated through light control and a preparation method and application of the instrument, and belongs to the technical field of biomedical engineering and flexible electronics. The instrument capable of being separated through light control comprises a flexible substrate layer, an electrode layer and a gel integration layer, the preparation method comprises the following steps: (1) forming an electrode pattern on a silicon wafer through photoetching, and carrying out oxygen plasma treatment to prepare a hydrophilic surface; (2) spin-coating a water-soluble polymer solution to form a sacrificial layer; (3) spin-coating silicone rubber pre-polymerized liquid and curing to form a flexible substrate layer; (4) dissolving the sacrificial layer with water to realize demolding, and embedding a patterned conductive material into the surface to form an electrode layer; and (5) coating the photo-responsive adhesive hydrogel pre-polymerization liquid, and performing cross-linking curing to form a gel integration layer, thereby obtaining the photo-responsive adhesive hydrogel. Through integrated structural design and functional material integration, the brain-computer interface ECoG electrode with high flexibility, high adhesion, high conductivity and controllable debonding capacity and the like is provided, and a technical basis and an application platform are provided for a next-generation intelligent implantable brain-computer system.

A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

The invention provides a multi-zone temperature control electrostatic chuck and a plasma processing device. The multi-zone temperature control electrostatic chuck comprises at least one of a grid temperature control module and a radial partition temperature control module. The grid temperature control module comprises a plurality of first independent temperature control units arranged in an array; the radial partition temperature control module comprises a plurality of annular second independent temperature control units; each of the first independent temperature control unit and the second independent temperature control unit comprises a partition variable heating structure; the partition variable heating structure comprises a partition control piece, a first partition deformation piece and at least two first partition heating pieces, the first partition deformation piece comprises a first center and at least two first connecting claws, and the partition control piece is electrically connected with the first partition deformation piece and the first partition heating pieces; the first partition heating piece is connected with the end, away from the first center, of the first connecting claw. The multi-zone temperature control electrostatic chuck is used for balancing a local overheat area or a local supercooling area caused by uneven plasma distribution.

A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

A plasma sterilization packaging device for agricultural products includes a feeding unit and a packaging unit, where the packaging unit includes a first conveyor belt, an encapsulation conveyor belt and a second conveyor belt, the lower side of the first conveyor belt is provided with a roll film, the upper side of the encapsulation conveyor belt is provided with a roll film adjustment device and an upper sealing device, and a cutting sealing device is arranged between the encapsulation conveyor belt and the second conveyor belt; the upper sealing device is fixedly connected to both sides of the encapsulation conveyor belt through a first mounting frame, the lower side of the first mounting frame is provided with a hot pressing roller, the hot pressing roller is provided with a sealing positioning wheel, and one side of the sealing positioning wheel is connected to a plasma processing unit.

An antenna includes an inner structure, an outer structure, and a plurality of interconnecting structures coupling the inner structure to the outer structure. The plurality of interconnecting structures is axisymmetric with respect to a center of the antenna. Each interconnecting structure has an azimuthal component of at least 30 degrees.

Some embodiments are directed to a method of processing a substrate in a plasma processing system. The method generally includes tuning a first capacitor and a second capacitor of a tuning circuit to match a first impedance corresponding to a first stage of a waveform, while a frequency of a radio frequency (RF) generator is preset to a first frequency; tuning a third capacitor of the tuning circuit and the frequency of the RF generator to match a second impedance corresponding to a second stage of the waveform, wherein the frequency of the RF generator is tuned to a second frequency; recording setting values of the first frequency and the second frequency that match different impedances at different stages of the waveform; and switching between the first frequency and the second frequency to match the different impedances at the different stages of the waveform.

In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

The invention is applicable to the field of cover plate glass processing, and provides a method for processing and preparing a cover plate glass with a superhard optical coating, which comprises the steps of glass substrate pretreatment, multi-layer superhard coating layer preparation, AF anti-fingerprint film preparation and post-treatment detection. According to the invention, the glass substrate is subjected to basic pretreatment (cleaning and plasma treatment), the Mohs hardness of the superhard coating layer can reach 5 when an evaporation process is adopted, and the Mohs hardness can reach 6 when a sputtering process is adopted; the initial water drop angle is larger than or equal to 115 degrees, the water drop angle is still larger than or equal to 102 degrees after 2500 times of friction tests, and the rubber friction tests can reach more than 6300 times; the total thickness of the film layer is controlled to be 30-100 nm, the film layer is adaptive to cover plate glass with different sizes of more than 1-20 inches (small-size adaptive evaporation / sputtering and large-size adaptive magnetron sputtering), the process is compatible with a continuous film coating line, and the film layer is suitable for processing of intelligent watch glass, intelligent mobile phones and small-size touch screen cover plate glass and has good practicability and mass production potential.

An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.

The invention discloses a functional current collector based on an inverted pyramid array structure and a preparation method thereof, and relates to the technical field of lithium battery current collectors. Comprising the following steps: preparing a periodic inverted pyramid array structure on a flexible polymer base film, and carrying out plasma treatment to obtain a pretreated base film; sequentially preparing a metal oxide layer and a metal layer on the surface of the pretreated base film to obtain a functional current collector; and the flexible polymer base film is made of one or more of PET (Polyethylene Terephthalate), PE (Polyethylene), PP (Polypropylene), PEN (Polyethylene Nitrate), PPTA (Polyphenylene Terephthalate), PI (Polyimide), PC (Polycarbonate), PEEK (Polyether Ether Ketone), POM (Polyoxymethylene), PPS (Polyphenylene Sulfonate), the functional current collector prepared by the method has high stripping force, low battery temperature and excellent safety.

An apparatus including a multi-station processing chamber with a top plate and a bottom portion encloses stations each including a pedestal assembly. A spindle centrally located between the stations is configured to rotate about a central axis, and is electrically connected to the bottom portion. An actuator controls movement of the spindle in the Z-direction. An indexer connected to the spindle rotates with the spindle, and includes extensions each configured to interface with a corresponding substrate for substrate transfer. An electrically conductive interface movably connected to the top plate provides an RF return path. Another actuator coupled to the grounding interface controls movement of the electrically conductive interface in the Z-direction. The electrically conductive interface moves downwards in the Z-direction to make contact with the indexer when each of the plurality of extensions is parked and the spindle is moved to a lower position during plasma processing.

A substrate support assembly includes a base, a substrate support on the base, and a supply unit. The base includes a first channel and a second channel. The first channel is a channel for a first heat transfer medium. The second channel is a channel for a second heat transfer medium. The supply unit is connected to the second channel. The second channel extends between the first channel and the substrate support. The supply unit is connected to the second channel to supply the second heat transfer medium to the second channel. The second heat transfer medium is a liquid metal.

The invention discloses a regenerated slurry preparation method based on recycled ceramic casting membranes, and belongs to the technical field of ceramic slurry preparation, and the method comprises the following steps: S1, pretreatment, fine crushing and deep extraction, and supercritical CO2 fluid extraction after crushing treatment; s2, thermal degreasing and activation: step-by-step temperature control removal and surface modification step-by-step heating thermal degreasing: in the first stage, the temperature is 150-250 DEG C, and heat preservation is performed for 1-2 hours; in the second stage, the temperature is 300-400 DEG C, and heat preservation is conducted for 0.5 h; s3, a plasma surface activation process: putting the ceramic powder into low-temperature plasma treatment equipment, introducing a mixed gas of argon and oxygen as a working gas, and treating under the action of specific radio frequency or microwave power; s4, slurry reconstruction, precise formula and optimized dispersion gradient powder mixing, wherein regenerated ceramic powder and new ceramic powder are mixed; and constructing a dispersion system: adding a solvent and a composite dispersant, and carrying out dispersion ball milling.

A plasma processing apparatus includes a chamber, a bias power supply to supply a pulsed bias DC signal, a substrate support to support a substrate and an edge ring in the chamber, and an electrical path. The substrate support has an electrostatic chuck that includes a first region to hold the substrate and a second region provided around the first region and to hold the edge ring, and is formed from a dielectric, a first bias electrode inside the first region, a second bias electrode inside the second region, a base to support the electrostatic chuck, and a first impedance adjustment mechanism to have a first variable capacitor connected between the second bias electrode and the base.

The invention belongs to the field of battery materials, and particularly relates to a regenerated graphite fast charging material and preparation and application thereof.The preparation method comprises the steps that waste graphite is subjected to first-stage plasma treatment in an oxygen-containing atmosphere in advance and then subjected to second-stage plasma treatment in an ammonia-containing atmosphere, and first-stage modified graphite is obtained; performing ultrasonic treatment on the first-stage modified graphite in a modification liquid containing an N modifier to obtain second-stage modified graphite; performing first-stage polymerization on the second-stage modified graphite in a solution A containing a monomer 1 in a formula 1 and an initiator in advance, and then performing second-stage polymerization on the second-stage modified graphite in a solution B containing a monomer 2 and an oxidizing agent to prepare the regenerated graphite quick-charging material, the monomer 2 comprises at least one of a formula 2 and a formula 3. The method provided by the invention can strengthen ion and electron conduction pathways of the regenerated material, improve the transmission rate, remarkably strengthen the fast charging performance of the material, and further strengthen the stability and low-temperature performance of the material.

The invention relates to a manufacturing method of a semiconductor device, and the method comprises the steps: providing a substrate, forming at least two gate structures which are mutually spaced on the substrate, and forming a groove between the two adjacent gate structures; forming a contact hole etching stop layer on the substrate and the gate structure, wherein a part, covering the opening of the groove, in the contact hole etching stop layer is provided with an overhang part; performing an ion implantation process on the overhanging part, and implanting doping ions into the overhanging part; plasma processing is carried out on the contact hole etching stop layer, the part, far away from the substrate, in the contact hole etching stop layer is converted into a sacrificial oxide layer, and the part, far away from the substrate, in the contact hole etching stop layer comprises at least one part of overhanging part; and removing the sacrificial oxide layer to enlarge the width of the opening. According to the invention, the negative influence of the overhang phenomenon generated in the contact hole etching stop layer on the subsequent process is reduced or eliminated, and the risk of generating a cavity when the trench is filled with the interlayer dielectric layer is avoided.

The invention discloses a flexible substrate material doped with a two-dimensional material and a preparation method of a sensor of the flexible substrate material, and belongs to the technical field of array sensors. The electrode material comprises a two-dimensional material substrate, a composite doping atom layer and an insulation isolation layer, high-density defect sites are formed through H2 plasma processing, uniform distribution of doping atoms is achieved in combination with atomic layer deposition, and an electrode and a temperature-sensitive layer are precisely integrated through the self-alignment photoetching technology. According to the scheme, the electronic structure of the two-dimensional material is optimized through the composite doping synergistic effect, the multi-layer heterojunction design and the high-precision preparation process are combined, the response capacity of the electrode to weak pressure signals is remarkably improved, and high resolution and stability of the sensor in pressure and temperature detection are achieved. The method has a wide application prospect in the fields of wearable equipment, medical monitoring, robot tactile perception and the like.

An apparatus including a multi-station processing chamber with a top plate and a bottom portion encloses stations each including a pedestal assembly. A spindle centrally located between the stations is configured to rotate about a central axis, and is electrically connected to the bottom portion. An actuator controls movement of the spindle in the Z-direction. An indexer connected to the spindle rotates with the spindle, and includes extensions each configured to interface with a corresponding substrate for substrate transfer. An electrically conductive interface movably connected to the top plate provides an RF return path. Another actuator coupled to the grounding interface controls movement of the electrically conductive interface in the Z-direction. The electrically conductive interface moves downwards in the Z-direction to make contact with the indexer when each of the plurality of extensions is parked and the spindle is moved to a lower position during plasma processing.

In a plasma processing device, power supply circuitry uses, when the degree of reflection of source radio-frequency power in an n-th phase period in an i-th waveform cycle of an electrical bias is greater than a predetermined value, a frequency obtained by adding a shift value Δf[n] to a source frequency f[i,n] as a source frequency for the n-th phase period in the subsequent waveform cycle and changes the sign of the shift value Δf[n] when the degree of reflection in the n-th phase period is on an upward trend in waveform cycles up to the i-th waveform cycle. A radio-frequency power supply changes the sign of the shift value Δf[n] when the source frequencies in the phase periods preceding and subsequent to the n-th phase period in the i-th waveform cycle are both higher than or lower than the source frequency in the n-th phase period.

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial structure which comprises a substrate, and a graphene composite nano layer, an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially stacked on the substrate. The graphene composite nano layer comprises a modified graphene layer and a ZnO sub-layer which are stacked in sequence, the modified graphene layer is arranged on the substrate, and the ZnO sub-layer is arranged on the modified graphene layer; the modified graphene layer is subjected to nitrogen plasma treatment, and the thickness of the modified graphene layer is 10-100 nm; and the thickness of the ZnO sub layer is 20 nm to 200 nm. According to the invention, lattice mismatch dislocation, residual stress and thermal mismatch of the epitaxial material grown on the heterogeneous substrate can be effectively modulated, the scattering efficiency under high current is improved, the probability of radiation recombination of the heterogeneous epitaxial material is improved, and the requirement of heterogeneous epitaxy is relaxed at the same time.

A plasma processing apparatus includes: a processing container; a resonator configured to resonate electromagnetic waves to be supplied; a slot antenna connected to the resonator; and a transmission window configured to transmit the electromagnetic waves radiated from the slot antenna and supply the electromagnetic waves into the processing container, wherein the resonator includes: an input port including an inner shaft and an outer cylinder; an output port including an inner shaft and an outer cylinder; a power supply fin connecting the inner shaft of the input port and the inner shaft of the output port and provided in the resonator; and a ground fin connected to the outer cylinder of the input port and the outer cylinder of the output port at a same potential and provided to protrude within the resonator so as to be inserted between fins of the power supply fin.