4604 results about "Resonator" patented technology

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

The invention discloses a tunnel fire air curtain smoke prevention control method and system, and relates to the technical field of intelligent fire fighting, and the method comprises the steps: building a digital twinborn prediction model, and generating a fire source position coordinate and a smoke diffusion trend prediction map through multi-physics field coupling simulation; analyzing the stability requirement of the air curtain jet flow through a Brapare-Prandtt boundary layer analysis algorithm, and generating a jet flow enhancement requirement parameter table in combination with temperature gradient correction; optimizing an acoustic vortex main frequency band by adopting a Slodhaar number, and generating an acoustic vortex control parameter set in combination with a matched sound pressure level and a configured resonator phase difference; and converting the acoustic vortex control parameter set into an execution instruction, monitoring the jet velocity, the vortex street stability and the smoke retardation effect in real time, and dynamically correcting the parameters of the digital twinborn prediction model. According to the method, physical quantity outline matching of the blocking intensity and the sound pressure level is achieved through the sound intensity-momentum equivalent method, and the optimal phase configuration is determined in combination with POD modal analysis.

The invention relates to the technical field of electromagnetic materials, and discloses a lossy multimode resonant metasurface unit and a multifunctional active coding wave absorber. The lossy multimode resonant metasurface unit comprises a lossy metal pattern layer, a supporting dielectric layer, an impedance matching dielectric layer and a metal ground layer which are sequentially arranged from top to bottom; the lossy metal pattern layer comprises a multi-mode resonator and a radio frequency PIN diode, the multi-mode resonator is used for realizing a plurality of resonance modes and playing a role in electromagnetic wave frequency selection, and the radio frequency PIN diode is used for playing a role of an adjustable resistor and adjusting the electromagnetic wave loss so as to realize intensity adjustment of reflected electromagnetic waves; every two adjacent multi-mode resonators are connected in a cascading mode through a radio frequency PIN diode and are combined to form a closed-loop pattern. The multifunctional electromagnetic wave absorber is simple in structure, has the constant phase scattering cancellation characteristic, and can independently regulate and control the reflection amplitude so as to solve the technical problem of an existing multifunctional electromagnetic wave absorber.

The present invention discloses a mold and method for thermoforming a micro-hemispherical resonator based on full mold constraint. The mold comprises a main body and a forming ball. The main body has a cavity recessed downward from its top surface, the cavity having a plurality of air holes communicating with the exterior of the main body, and the bottom of the cavity has positioning holes. The forming ball is placed in the cavity through the positioning holes. The shape parameters of the forming ball match the shape parameters of the inner cavity of the micro-hemispherical resonator. The method for thermoforming a micro-hemispherical resonator employs the above-mentioned mold to form the micro-hemispherical resonator. Compared with the prior art, the present invention utilizes a precisely machined forming ball to constrain the shape of the micro-hemispherical resonator during the forming process, thereby further improving the structural symmetry of the micro-hemispherical resonator and enabling control of the shape parameters of the micro-hemispherical resonator.

A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.

A wearable electronic device can include a sidewall housing defining an internal volume and a band slot configured to receive a securement band. The sidewall housing can include a radio-frequency (RF)-transparent window defining the band slot, a rear cover coupled to the sidewall housing with the rear cover including metal, an antenna resonator disposed in the internal volume adjacent the RF-transparent window, and a conductor electrically coupling the rear cover to the antenna resonator.

A horizontally polarized omnidirectional multi-band antenna structure includes a substrate and two structurally-symmetric radiators, each being provided on a layout area on one of the two opposite sides of the substrate, and including a X-shaped primary microstrip line, four secondary microstrip lines, four primary stubs, four secondary stubs and four resonators. The primary microstrip line has four end points arranged with the secondary microstrip lines along different extending directions. The primary stubs extend along different directions from four sections of the primary microstrip line. Each secondary microstrip line is provided with one of the secondary stubs. Resonators are provided between four end points of the primary microstrip line and the primary stubs. The antenna structure supports WiFi 6E / WiFi 7 frequency bands including the 2 GHz, 5 GHz and 6 GHz bands, has characteristics of horizontal polarization and omnidirectionality, and effectively satisfies the needs for miniaturized multi-band and wide band antennas.

The technology described herein is directed towards resonators that incorporate or are closely coupled to transducers from which energy is harvested. The resonators can be unit cells of a metasurface configured for narrowband sound absorption by phase cancellation of the acoustic wave Electroacoustic transducers such as piezoelectric transducers can be positioned, e.g., at the neck ports of the resonators, to generate electricity as the air pressure of incoming acoustic waves enters the unit cells. Energy can be harvested from the electricity, and stored for usage and / or used directly to power a device. Such a device powered by the harvested energy can change the resonant frequency of the device, e.g., by changing temperatures in the resonators' air cavities, changing respective dimensions of the respective air cavities, or changing the resonant frequency of the unit cells resonators by changing respective airflow in the respective air cavities.

An adaptive modular multimodal communication and computing panel includes a multilayer stack with a protective layer transmissive in selected bands, a reconfigurable communication layer operable in phased array, reflectarray, hybrid phased reflector, free space optical, or quantum modes, and electronics with heterogeneous processors. A multi scale interconnect and input and output fabric couples electrical, radio frequency, guided optical, and free space optical domains through interfaces including electro optic transduction and RF or baseband conversion. The fabric may implement programmable true time delay, resonators, and comb referenced timing. A management system coordinates beamforming, sensing, routing, calibration, workload placement, and security. Panels tessellate and connect by electrical, radio frequency, and fiber optic interfaces, supporting hot swappable modules, blind mate connectors, robotic servicing, and anti tamper features. Power and thermal subsystems harvest, store, regulate, and dissipate energy. The architecture scales from chip level modules to vehicle, airborne, maritime, orbital, and deployable systems.

The present application provides a method for generating a micro-scale columnar high-speed acoustic beam in a liquid environment, comprising: a liquid environment; a high-frequency resonator, which generates 0.5-30 GHz ultrasonic waves to act on the liquid environment during operation, generating a directional fluid motion along the direction of propagation of the sound wave in the liquid at the solid-liquid interface, i.e., a columnar focused acoustic beam; the high-frequency resonator is driven to operate in at least one driving cycle with a first power, each driving cycle including a first stage and a second stage, the first stage driving the high-frequency resonator to operate, and the second stage stopping the driving; the magnitude of the first power causes the high-frequency resonator to generate an acoustic beam in the first stage; and the duration of the first stage at the first power is less than the second threshold or the duty cycle of the first stage in one driving cycle is less than the first threshold. Corresponding applications are also provided, such as a method for directional transport of liquids or particles in liquids, and a method for processing target objects.

An on-chip mid-infrared micro-ring resonant cavity microfluidic spectrometer is integrated on a substrate material and comprises a spot size converter, an optical coupler, a microfluidic module, a micro-ring resonant cavity, a miniature thin-film resistance heater, a sequential control power supply module, an optical filtering system and a photoelectric detector array. Selective filtering is performed on an input optical signal, and the flow and flow velocity of liquid or gas to be detected are controlled by using the microfluidic module, so that selective absorption of spectral components of the liquid or gas to be detected is realized. In addition, the invention also discloses a mid-infrared integrated optical chip micro-fluidic multiphase detection device comprising the spectrometer and a detection method thereof, the device also comprises a pumping and reference light source module and an on-chip mid-infrared frequency comb generation module, a broadband frequency comb is generated as a light source, a photoelectric detector array is used for collecting signals, and the detection precision is improved. The detection and inversion of the type and concentration of multi-component liquid or gas to be detected are realized, and the on-chip, real-time and micro detection of multi-component substances is realized.

The invention provides a TF-SAW resonator, a preparation method thereof and a filter, and relates to the technical field of semiconductors. The interdigital electrode comprises piston structures, sub-bus bars and metal bumps, the piston structures are positioned at two ends of the acoustic part, it can be understood that the piston structures are arranged at the tail end areas of the acoustic part on the electrode finger strips, and larger sound velocity difference is realized by changing the sound velocity of the tail end areas; therefore, the transverse mode is reflected in different directions to avoid energy dissipation caused by resonance; on a propagation path of a transverse mode, the sub bus bars and the metal bumps are sequentially arranged, clutter interference is eliminated by causing sound velocity difference, so that clutter mode interference is inhibited to the greatest extent, the Q value is improved, the insertion loss flatness in a passband is improved, and the performance of the TF-SAW resonator is further improved.

Photonic coupling mechanisms and techniques are described. In one example, a method includes writing a photonic wirebond to at least one optical waveguide to position the photonic wirebond at a first coupling position relative to a crystalline microresonator, injecting optical power into the at least one optical waveguide, determining a number of generated light modes within the crystalline microresonator, and performing a peak search to locate at least one soliton step corresponding to at least one of the generated light modes within the crystalline microresonator.

Embodiments described relate to a system for material detection and identification, The system may include a transmitter unit configured to transmit an RF signal at a resonance frequency for a material. The system may also include a phased array antenna assembly, the phased array antenna assembly configured to receive a response signal. The system may also include a receiver unit configured to analyze the response signal and to identify the material to a user if the presence of the material is indicated by the resonance characteristics. The techniques described herein relate to a method for material detection and identification. The method may include configuring a transmit signal for parameters to detect a material; sending the transmit signal to a phase shifter; transmitting, using a phased array antenna assembly, an RF signal at a resonance frequency for the material; processing the response signal; and outputting an identification of the material.

The invention belongs to the technical field of photoelectronics, and particularly relates to a wide-spectrum narrow-linewidth semiconductor mode-locked laser, and the collaboration of a saturable absorption region SA and a resonator is reflected in time domain-frequency domain dual optimization. And the resonator optimizes the frequency domain characteristics through nonlinear broadening, phase synchronization and mode purification. The SA adjusts a mode locking threshold value in real time through dynamic bias voltage, the pulse energy stability is ensured, dispersion management of the resonator balances the SPM and group velocity dispersion, spectrum splitting is avoided, and the dissipative soliton form is maintained. Besides, due to heterogeneous integration of the InP-based SA and the SiN-based resonator, wafer bonding of the InP-based SA and the SiN-based resonator is realized, high-efficiency energy transfer is realized through the low-loss conical waveguide, a high-performance frequency comb with a wide spectrum and a narrow pulse width is output, and the high-performance frequency comb can be widely applied to the fields of ultrafast optics, coherent light communication and precision spectroscopy.

An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction, and resonators each including a functional electrode on the piezoelectric layer in the first direction. The support includes first and second space portions at positions where the respective resonators at least partially overlap in plan view in the first direction, the second space portion with an area larger than an area of the first space portion in plan view in the first direction. The piezoelectric layer includes first and second through-holes respectively communicating with the first and second space portions, and the first through-hole has an area larger than an area of the second through-hole in plan view in the first direction.

The embodiment of the invention provides a microresonator and a preparation method of the microresonator, the microresonator can be obtained by connecting an MIM plate capacitor and an inductor of a planar coil structure, and an upper electrode, a lower electrode and the inductor of the MIM plate capacitor and a microstrip line connecting the capacitor and the inductor are all prepared from superconducting materials. A dielectric layer of the MIM plate capacitor can be prepared by adopting an ALD technology, a dielectric film grown by adopting the ALD technology is very compact and has very good thickness uniformity, a relatively high dielectric constant can be realized, and the quality factor of the microresonator can be remarkably improved by combining the zero resistance characteristic of a superconducting material; and the miniaturization of the microresonator can be realized. Moreover, in the preparation process, the three layers of thin films for forming the capacitor and the inductor are formed through deposition firstly, and then the three layers of thin films are patterned layer by layer, so that introduction of excessive impurities can be avoided, interlayer contact can be optimized, and the risk of electric leakage can be reduced.

The invention discloses an antenna optimization method and system based on a right trapezoid half-mode resonator. The method comprises the following steps: acquiring initial structure parameters of the right trapezoid half-mode resonator; constructing a three-dimensional electromagnetic field simulation model based on the initial structure parameters, calculating electromagnetic field distribution characteristics of the right-angled trapezoidal half-mode resonator through a finite element analysis method, and performing primary verification on the electromagnetic field distribution characteristics; generating an optimization objective function; carrying out iterative optimization on the geometric parameters of the right trapezoid half-mode resonator by adopting a genetic algorithm; re-calculating electromagnetic field distribution characteristics based on the optimized geometric parameters, and carrying out secondary verification on the electromagnetic field distribution characteristics; and adjusting the position of the feed port and the thickness of the metal patch according to the deviation direction. The method has the following advantages and effects that the problem that a traditional design method depends on experience trial-and-error or single-target optimization, and collaborative optimization of multiple parameters is difficult to achieve under the complex electromagnetic coupling effect is solved.

One or more systems, devices, methods of use and / or methods of fabrication provided herein relate to a device that can facilitate qubit measurement with isolation imposed between a quantum processor and a respective qubit measurement circuit and / or which respective qubit measurement circuit can have a small footprint, such as within a respective cryogenic chamber of a quantum system. According to one embodiment, a device comprises an isolator circuit having a bandpass filter configuration coupled between a pair of ports and the bandpass filter configuration comprising two or more poles. Two or more shunt resonators can be realized as the two or more poles, wherein the two or more shunt resonators can comprise DC SQUIDs and can be coupled together with one or more admittance inverters. A non-reciprocal signal transmission can be generated between the two ports by RF pumping the DC SQUIDs.

The invention relates to an integrated microcavity optical comb repetition frequency and optical frequency locking device and method, and belongs to the technical field of integrated microcavity optical combs. The locking device comprises a pumping module, a power amplification module, a phase modulation module, an electro-optic driving module, an acousto-optic modulation module, an acousto-optic driving module, a band-pass filtering module, a micro-ring resonant cavity and a beam splitting module; the device comprises a soliton detection module, a control module, a repetition frequency detection module, a first feedback control module, an acetylene frequency stabilized laser, a beat frequency module, an optical frequency beat frequency detection module and a second feedback control module. The locking device can achieve full frequency locking of the microcavity optical comb, has the advantages of being high in frequency stability, wide in servo bandwidth, simple and compact in structure, tight in locking, low in noise, high in reliability and low in cost, and can provide a powerful tool for the field of precision measurement.

A nonlinear all optical machine learning system (NAOMLS) with nonlinear optical resonator-based continuous wave and / or spiking neurons (NORs) and linear optical components or layers (LOL) learns to implement target tasks after machine learning based direct and / or indirect inverse design and / or optimization of the NORs and / or optimization of the LOL. The inversely designed and / or optimized NORs and the optimized LOL collectively define learnable mapping functions between input lights and output lights of the NAOMLS to meet target objectives for target tasks. In some embodiments, the NORs are indirectly and inversely designed to meet inversely designed objectives in order to be integrated with the NAOMLS so that the NAOMLS can function properly to meet target objectives for target tasks. In some embodiments, the NORs are integrated directly with the NAOMLS and inversely designed and / or optimized with the LOL to directly meet target objectives for target tasks.

A device comprises a superconducting quantum bit, and a tunable readout resonator coupled to the superconducting quantum bit. The tunable readout resonator comprises a fixed resonator and a tunable element which is coupled to the fixed resonator and which is configured for flux-tuning the tunable readout resonator into at least one of a first state and a second state. The tunable element comprises a superconducting loop which comprises at least two asymmetric Josephson junctions. In the first state, the tunable readout resonator comprises a first resonant frequency that differs from a transition frequency of the superconducting quantum bit by a first detuning value. In the second state, the tunable readout resonator comprises a second resonant frequency that differs from the transition frequency of the superconducting quantum bit by a second detuning value, which is less than the first detuning value.

The invention relates to a rapid detection method for the resonant frequency of a hemispherical harmonic oscillator, belongs to the technical field of inertial measurement, solves the problems of long measurement time and low detection precision in the measurement of the second-order resonant frequency of the hemispherical harmonic oscillator in the prior art, and comprises the following steps: S1, providing a voltage excitation source, and applying a broadband sinc excitation signal to the hemispherical harmonic oscillator; s2, continuously recording the detection data in a set continuous recording time period; s3, performing frequency mixing to obtain data after frequency mixing; step S4, carrying out anti-aliasing filtering and down-sampling on the data after frequency mixing; step S5, carrying out N-point fast Fourier transform on the downsampled data to obtain a frequency spectrum of the detection signal; s6, based on the frequency spectrum of the converted detection signal, determining the frequency corresponding to the peak value of the frequency spectrum, and obtaining the measured second-order resonant frequency of the hemispherical harmonic oscillator; and S7, based on the measured second-order resonant frequency of the hemispherical harmonic oscillator, performing frequency phase loop, amplitude loop closed loop and orthogonal closed loop on the hemispherical harmonic oscillator.

The invention relates to the technical field of data processing, in particular to a data enhancement prediction method for the thermoelastic quality factor of a micro-hemispherical resonator, which comprises the following steps: S1, determining the radius size of the manufactured micro-hemispherical resonator, determining the simulation value range of the radius and thickness of an anchor point of the resonator, and determining the simulation value range of the thickness of the resonator; harmonic oscillators with different geometric boundary dimensions are established through high-temperature blow molding simulation; s2, thermodynamic simulation is carried out on the harmonic oscillator appearance obtained through blow molding simulation, and a harmonic oscillator thermoelastic quality factor data set is established; s3, performing data enhancement on the thermoelastic quality factor data set by adopting a cubic polynomial fitting method; and S4, training the enhanced thermoelastic quality factor data set by using a deep learning model to obtain a harmonic oscillator thermoelastic quality factor prediction model. According to the method, the bottleneck of scarcity of high-precision simulation data is broken through, unification of high precision and high efficiency is realized, the robustness and reliability of a prediction model are improved, and the method has wide engineering applicability and popularization value.

The invention discloses an all-dielectric structure type broadband wave-absorbing metamaterial and a design method thereof. The all-dielectric structure type broadband wave-absorbing metamaterial comprises a substrate and a plurality of resonators, the plurality of resonators are periodically and uniformly arrayed on the surface of the substrate, the adjacent resonators are connected with each other, each resonator comprises a pyramid structure unit and a grid structure unit, the pyramid structure units are nested in the grid structure units to form a pyramid-grid composite resonator, and the substrate and the resonators are both made of a high dielectric loss composite material. Based on the brand new design angle of wave absorbing performance complementation, the limitation of the wave absorbing performance of a single structure is broken through, the wave absorbing performance is improved from the microstructure level, meanwhile, efficient electromagnetic wave energy absorption is achieved in a wider frequency range, multi-stage dissipation and broadband impedance matching of incident electromagnetic waves are achieved, and the wave absorbing performance is improved. And the technical limitation of thickness constraint and narrow-band response of the traditional wave-absorbing material is broken through.

The invention relates to the technical field of hemispherical harmonic oscillator assembly, in particular to a welding method and device for an assembled hemispherical harmonic oscillator, and the device comprises a vibration welding platform and a clamping assembly located above the vibration welding platform; the vibration welding platform is used for bearing the sensitive base and providing a thermal field and a vibration field needed by welding, and the clamping assembly is used for clamping the center shaft and sending the center shaft into a center hole of the base. A heating unit and a composite vibration ultrasonic transducer are arranged in the platform, and the platform is configured to apply high-frequency vibration formed by superposition of vertical longitudinal waves and horizontal torsional waves to the base. The high-frequency vibration thixotropic effect is used for reducing the viscosity of the molten solder, the ultrasonic cavitation effect is used for forcibly discharging bubbles at the bottom of the blind hole, and the sound radiation pressure generated by the vibration standing wave field is used for driving the center shaft to achieve friction-free self-centering in the hole. According to the device, the problems of air bolt pseudo soldering and rigid assembly clamping stagnation in the traditional process are solved, and the assembly coaxiality and the connection strength of the harmonic oscillator are remarkably improved.

The present invention features a micrometer-scale torsion balance device comprising a rigid mass and two or more nanoribbons attached to the rigid mass. The rigid mass may be suspended by the two or more nanoribbons. The two or more nanoribbons may be placed under tensile stress. A local acceleration value may be derived from a torsional stiffness of the two or more nanoribbons. In some embodiments, the rigid mass may comprise silicon. In some embodiments, the two or more nanoribbons may comprise silicon nitride. In some embodiments, the rigid mass may have a polygon shape, the polygon shape having four or more sides. A side of the four or more sides may be longer than all others.

A computed tomography imaging system (102) includes a gantry (104). The computed tomography imaging system also includes a rotating frame 106 rotatably supported in the gantry. The rotating frame comprises an X-ray source (114) and an X-ray radiation sensitive detector (120), the X-ray source being configured to emit X-ray radiation traversing an examination region, the X-ray radiation sensitive detector is disposed opposite the X-ray source across the examination region and is configured to detect X-ray radiation traversing the examination region and to generate a signal indicative of the detected X-ray radiation. The computed tomography imaging system also includes at least one component (202, 214) of the gantry or rotating frame that generates audible noise. The computed tomography imaging system also includes an audible noise reducer (128) configured to reduce the audible noise. The audible noise reducer includes a resonator that is tuned to a first frequency of the audible noise.

The invention discloses an ultra-wideband balancer applied to high-power microwave measurement and a manufacturing method and device. The ultra-wideband balancer comprises a thick slot line layer, a microstrip line dielectric plate and a microstrip line layer, wherein the microstrip line dielectric plate and the microstrip line layer are stacked on one side of the thick slot line layer in the second direction, and the microstrip line layer is provided with an output port; the first input port and the second input port are respectively connected with an SMA connector, the phase difference of input signals of the two SMA connectors is 180 degrees, and the output port is connected with an SMA connector; a resonant cavity and a thick slot line resonator are formed between the first thick slot line structure and the second thick slot line structure, and the thick slot line resonator and the microstrip line layer form electromagnetic coupling, so that an input signal which is input by the first input port and the second input port and has a phase difference of 180 degrees is output from the output interface as an anti-phase microwave synthesis signal; the ultra-wideband balancer has larger power capacity, the problem that the power capacity is limited due to the fact that the slot line is too thin is solved, and the ultra-wideband balancer applied to high-power microwave measurement has larger power capacity.

The invention discloses a crystal resonator sputter coating device and a preparation method of a crystal resonator, and belongs to the field of electronic components, the crystal resonator sputter coating device comprises a bottom plate, a lower electrode mask plate, a positioning plate, an upper electrode mask plate and a magnetic cover plate in sequence, the positioning plate is provided with a wafer positioning groove, a wafer is installed in the wafer positioning groove, and the magnetic cover plate is provided with a magnet. The upper electrode mask plate and the lower electrode mask plate are both provided with electrode holes, the thickness of the positioning plate is recorded as h < definite >, and one surface of at least one of the upper electrode mask plate and the lower electrode mask plate, which faces a wafer, is provided with a diffusion prevention bulge for preventing diffusion of electrode particles during film coating, and the thickness of the diffusion prevention bulge is recorded as h < definite >. The size of the dispersion preventing protrusion is matched with the size of the wafer positioning groove, the dispersion preventing protrusion is located in the wafer positioning groove during assembly, the thickness of the wafer is recorded as h wafer, and h wafer lt is smaller than or equal to 0.017 mm; and h, setting. The sputtering coating device solves the problem of electrode diffusion of the high-frequency crystal resonator in the existing sputtering coating device for the crystal resonator due to too small wafer thickness.