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30113 results about "Light emitting device" patented technology
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The light emitting material in this device is a monolayer semiconductor, which is just three atoms thick. The device opens the door to invisible displays on walls and windows -- displays that would be bright when turned on but see-through when turned off -- or in futuristic applications such as light-emitting tattoos, according to the researchers.
Light-emitting device
ActiveUS20060113549A1Desired characteristicTransistorElectroluminescent light sourcesField-effect transistorActive layer
An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
Owner:CANON KK +2
Semiconductor Device and Method for Manufacturing the Same
ActiveUS20090134399A1Good step coverageThin thicknessDischarge tube luminescnet screensElectroluminescent light sourcesActive matrixMetal electrodes
A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
Owner:SEMICON ENERGY LAB CO LTD
Cyclometallated iridium carbene complexes for use as hosts
ActiveUS7154114B2Electrolysis componentsElectroluminescent light sourcesDopantOrganic light emitting device
An organic light emitting device is provided. The device has an anode, a cathode and an organic layer disposed between the anode and the cathode. The organic layer comprises a host and a dopant, and the host comprises a compound having at least one carbene atom coordinated to iridium, and the compound has the structure:
Owner:UNIVERSAL DISPLAY +1
Phosphorescent compound, a phosphorescent composition and an organic light-emitting device
InactiveUS7250226B2Improve efficiencyDischarge tube luminescnet screensLamp detailsOrganic light emitting deviceCharge carrier
An organic polymeric phosphorescent compound and an organic light-emitting device employing the organic polymeric phosphorescent compound. The phosphorescent compound is a neutral organic polymeric phosphorescent compound emitting phosphorescence and used in an organic light-emitting device, and includes a phosphorescent unit and a carrier transporting unit.
Owner:NIPPON HOSO KYOKAI +1
Luminescence device and display apparatus
InactiveUS20030068526A1High efficiency luminescenceExtend device lifeIndium organic compoundsDischarge tube luminescnet screensHigh luminanceLight emitting device
A luminescence device having a layer containing a metal coordination compound which has a partial structure MLm of formula (2) below and is preferably entirely represented by formula (3) below:MLmL'n (3),wherein M denotes a metal atom of Ir, Pt, Rh or Pd; represent mutually different bidentate ligands; m is 1 or 2 or 3; n is 0 or 1 or 2 with the proviso that m+n=2 or 3; the partial structure MLm is represented by formula (2) below (wherein B is an isoquinolyl group bonded to the metal M with its N and including a position-1 carbon atom bonded to a cyclic group A which includes the C bonded to the metal M), and the partial structure ML'n is represented by formula (4), (5) or (6) shown below. There is provided a luminescence device capable of high-efficiency luminescence and long-term high luminance and adapted to red luminescence.
Owner:CANON KK
Selective growth method, and semiconductor light emitting device and fabrication method thereof
InactiveUS6858081B2Improve featuresReduce widthPolycrystalline material growthSemiconductor/solid-state device manufacturingThree dimensional shapeActive layer
In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.
Owner:SAMSUNG ELECTRONICS CO LTD
Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same
A multi-chip lighting emitting device (LED) lamp for providing white light includes a submount including first and second die mounting regions thereon. A first LED chip is mounted on the first die mounting region, and a second LED chip is mounted on the second die mounting region. The LED lamp is configured to emit light having a spectral distribution including at least four different color peaks to provide the white light. For example, a first conversion material may at least partially cover the first LED chip, and may be configured to absorb at least some of the light of the first color and re-emit light of a third color. In addition, a second conversion material may at least partially cover the first and / or second LED chips, and may be configured to absorb at least some of the light of the first and / or second colors and re-emit light of a fourth color. Related light fixtures and methods are also discussed.
Owner:CREELED INC
Platinum complex and light emitting device
ActiveUS20070103060A1Enhanced glowSolve low luminous efficiencyDischarge tube luminescnet screensElectroluminescent light sourcesOxygenLight emission
Provision of a novel platinum complex which is useful as a material for a light-emitting device of good light emission characteristic and light emission efficiency, and a novel light-emitting material that may be utilized in various fields. A platinum complex represented by the following general formula (1): (in which two rings of ring A, ring B, ring C, and ring D represent nitrogen-containing heterocyclic rings which may have a substituent and the remaining two rings of them represent aryl rings or hetero aryl rings which may have a substituent, the ring A and the ring B, the ring A and the ring C or / and the ring B and the rind D may form condensed rings. Two of X1, X2, X3, and X4 represent nitrogen atoms coordination bonded to a platinum atom and the remaining two of them represent carbon atoms or nitrogen atoms. Q1, Q2, and Q3 each represents a bond, oxygen atom, sulfur atom or bivalent group, two of Z1, Z2, Z3, and Z4 represent coordination bonds, and the remaining two of them represent covalent bonds, oxygen atoms or sulfur atoms), and a light-emitting device containing the platinum complex.
Owner:TAKASAGO INTERNATIONAL CORPORATION
Luminescent ceramic for a light emitting device
ActiveUS20050269582A1Less sensitive to temperatureImprove conversion efficiencyDischarge tube luminescnet screensLamp detailsPhosphorFluorescence
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
Owner:LUMILEDS
Flexible high-temperature ultrabarrier
InactiveUS7018713B2Final product manufactureSynthetic resin layered productsPolyethylene terephthalateOrganic light emitting device
A flexible barrier assembly having a flexible visible light-transmissive substrate having a Tg greater than or equal to that of heat-stabilized polyethylene terephthalate (“HSPET”) overcoated with a first polymer layer having a Tg greater than or equal to that of HSPET and further overcoated with at least two visible light-transmissive inorganic barrier layers separated by at least one second polymer layer having a Tg greater than or equal to that of HSPET can be used to mount, cover, encapsulate or form moisture- and oxygen-sensitive articles such as organic light emitting devices and light valves.
Owner:3M INNOVATIVE PROPERTIES CO
Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
InactiveUS20140246656A1Improve efficiencyHigh sublimabilityGroup 5/15 element organic compoundsSolid-state devicesHydrogenEmission efficiency
As a novel substance having a novel skeleton, an organometallic complex having high emission efficiency and improved color purity is provided. The color purity is improved by reducing the half width of an emission spectrum. The organometallic complex is represented by General Formula (G1). In General Formula (G1), at least one of R1 to R4 represents a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and the others each independently represent hydrogen or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms. Note that the case where all of R1 to R4 represent alkyl groups each having 1 carbon atom is excluded. Further, R5 to R9 each independently represent hydrogen or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.
Owner:SEMICON ENERGY LAB CO LTD
Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
ActiveUS20130165653A1Improve emission efficiencyHigh color purityGroup 5/15 element organic compoundsGroup 3/13 element organic compoundsNitrogenKetone
As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a β-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.
Owner:SEMICON ENERGY LAB CO LTD
Red emitting phosphor materials for use in LED and LCD applications
ActiveUS7358542B2Discharge tube luminescnet screensElectroluminescent light sourcesPhosphorPhosphate
Phosphor compositions including those having the formulas A2-xEuxW1-yMoyO6, where A is selected from Y, Gd, Lu, La, and combinations thereof; and where 0.5≦x≦1.0, 0.01≦y≦1.0; MmOnX, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and Eu3+ activated phosphate or borate phosphors. Also disclosed are light emitting devices including a light source and at least one of the above phosphor compositions.
Owner:GENERAL ELECTRIC CO
Semiconductor light-emitting device and semiconductor light-emitting device
InactiveUS7087932B2Well formedSolid-state devicesSemiconductor/solid-state device manufacturingCrystal planeCrystallinity
Owner:SAMSUNG ELECTRONICS CO LTD
Nitride semiconductor light emitting device and fabrication method thereof
ActiveUS8129711B2Good effectReduce leakage currentSemiconductor/solid-state device manufacturingSemiconductor devicesActive layerLight emitting device
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
Owner:SAMSUNG ELECTRONICS CO LTD
Metal Complex, Light-Emitting Device, and Image Display Apparatus
InactiveUS20080210930A1Improve efficiencyIncrease brightnessIndium organic compoundsSolid-state devicesLight emitting deviceCoordination complex
Owner:CANON KK
Semiconductor light emitting device
ActiveUS8008683B2High luminous efficiencySolid-state devicesSemiconductor devicesElectrical conductorActive layer
The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.
Owner:SAMSUNG ELECTRONICS CO LTD
Organic compound for light-emitting device, light-emitting device, and image display apparatus
ActiveUS20070231600A1Low costIncreased durabilityIndium organic compoundsDischarge tube luminescnet screensStructural formulaOrganic electroluminescence
A light-emitting device is provided which uses an organic compound to emit light with high luminance and extremely high efficiency. The organic compound is composed of a metal complex having monovalent bidentate ligands. The light-emitting device includes a pair of electrodes which are an anode and a cathode, and plural organic compound layers interposed between the electrodes, in which at least one layer of the organic compound layers contains a metal complex represented by the following structural formula. The light-emitting device is an organic electroluminescent device using the light-emitting device in which the layer including the organic compound is a light-emitting layer.
Owner:CANON KK
Nitride semiconductor light emitting device and method for manufacturing the same
ActiveUS7154124B2Reduce the probability of spreadingIncrease the differenceSolid-state devicesSemiconductor devicesBand shapeLight emitting device
A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.
Owner:SAMSUNG ELECTRONICS CO LTD
Plane light source and LCD backlight unit having the same
ActiveUS7940350B2Reduce in quantityImprove efficiencyLighting support devicesNon-linear opticsLight emitting deviceLightness
There are provided a plane light source and an LCD backlight unit having the same. A plane light source having a plurality of light emitting devices arranged in a light emitting device matrix having rows and columns at a substrate according to an aspect of the invention includes a first matrix having a plurality of light emitting devices arranged in rows and columns; and a second matrix having a plurality of light emitting devices arranged in rows and columns, each of the light emitting devices located within a quadrangle formed by four neighboring light emitting devices included in the first matrix, wherein a pitch S between one light emitting device included in the light emitting device matrix and another light emitting device most adjacent to the one light emitting device satisfies the following equation to obtain uniform luminance distribution at a position distant from a light emitting surface of the light emitting device by an optical length l,S≤l2×tan(θ2+α),Equationwhere −π / 18≦α≦π / 18 is satisfied, and θ is an orientation angle of the light emitting device.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit
ActiveUS7002182B2Easily light emittingImprove luminous efficiencySolid-state devicesSemiconductor devicesActive layerLight emitting device
A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO2 film or the like is formed on the underlying n-type GaN layer. An n-type GaN layer having a hexagonal pyramid shape is selectively grown on a portion, exposed from an opening of the growth mask, of the underlying n-type GaN layer. The growth mask is removed by etching, and then an active layer and a p-type GaN layer are sequentially grown on the entire substrate so as to cover the hexagonal pyramid shaped n-type GaN layer, to form a light emitting device. An n-side electrode and a p-side electrode are then formed.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor light emitting device and fabrication method thereof
InactiveUS6967353B2Improve luminous efficiencyIncrease brightnessSolid-state devicesSemiconductor/solid-state device manufacturingCrystal planeActive layer
A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.
Owner:SAMSUNG ELECTRONICS CO LTD
Organometallic Complex, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Including the Organometallic Complex
ActiveUS20100105902A1Improve emission efficiencySolve low luminous efficiencyGroup 4/14 element organic compoundsGroup 1/11 element organic compoundsLength waveLight emitting device
An organometallic complex is provided by which favorable red-color light emission can be obtained. Further, an organometallic complex having a peak of light emission at about 620 nm is provided because the wavelength of light which is perceived as excellent red-color light is about 620 nm. Furthermore, an organometallic complex is provided by which red-color light emission with high luminous efficiency (cd / A) can be obtained. An organometallic complex represented by the following general formula (G2) and a light-emitting element, a light-emitting device, and an electronic device including the organometallic complex represented by the following general formula (G2) are provided.
Owner:SEMICON ENERGY LAB CO LTD
Light-emitting apparatus and production method thereof
Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is less than 10−5 g / m2.
Owner:CANON KK
Display unit, method of manufacturing same, organic light emitting unit, and method of manufacturing same
InactiveUS20070102737A1Size for such displayUtilization efficiency of lightElectroluminescent light sourcesSolid-state devicesEngineeringLength wave
A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit (1), wherein a plurality of organic EL devices (3B), (3G), and (3R), in which a function layer (6) including a light emitting layer (11) is sandwiched between a lower electrode (4) made of a light reflective material and a semi-transmissive upper electrode (7), and which has a resonator structure in which light h emitted in the light emitting layer (11) is resonated using a space between the lower electrode (4) and the upper electrode (7) as a resonant section (15) and is extracted from the upper electrode (7) side are arranged on a substrate (2). In the respective organic EL devices (3B), (3G), and (3R), the function layer (6) is made of an identical layer, and an optical distance L of the resonant section (15) is set to a value different from each other so that blue, green, or red wavelength region is resonated.
Owner:SONY CORP
Lighting device and method of lighting
There is provided a lighting device which emits light with an wall plug efficiency of at least 85 lumens per watt. The lighting device comprises at least one solid state light emitter, e.g., one or more light emitting diodes, and optionally further includes one or more luminescent material. In some embodiments, the output light is of a brightness of at least 300 lumens. In some embodiments, the output light has a CRI Ra of at least 90. Also, a method of lighting, comprising supplying electricity to a lighting device which emits light with a wall plug efficiency of at least 85 lumens per watt.
Owner:IDEAL IND LIGHTING LLC
Homoepitaxial gallium-nitride-based light emitting device and method for producing
A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.
Owner:SLT TECH +1
Vehicle, display device and manufacturing method for a semiconductor device
InactiveUS7335573B2Simple processBroad visionFinal product manufactureSemiconductor/solid-state device detailsDisplay deviceLight emitting device
To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
Owner:SEMICON ENERGY LAB CO LTD
Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device
InactiveUS20140183503A1Reduce the driving voltageImprove current efficiencyOrganic chemistrySolid-state devicesLow voltageQuinoline
Disclosed is a light-emitting element having high emission efficiency, capable of driving at low voltage, and showing a long lifetime. The light-emitting element contains a compound between a pair of electrodes, and the compound is configured to give a first peak of m / z around 202 and a second peak of m / z around 227 in a mass spectrum. The first and second peaks are product ions of the compound and possess compositions of C16H9 and C17H10N, respectively, which are derived from a dibenzo[f,h]quinoline unit.
Owner:SEMICON ENERGY LAB CO LTD
Material for organic light-emitting device, and organic light-emitting device using same
ActiveUS20140183517A1Reduce device voltageImprove lighting efficiencyOrganic chemistrySolid-state devicesOrganic light emitting deviceLight emitting device
The present specification provides an organic light emitting device comprising: a first electrode, a second electrode, and organic material layers formed of one or more layers comprising a light emitting layer disposed between the first electrode and the second electrode, wherein one or more layers of the organic material layers comprise the compound of Formula 1, or a compound in which a heat-curable or photocurable functional group is introduced into this compound.
Owner:LG CHEM LTD
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