2796 results about "Lanthanide" patented technology

A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

A method for preparing a functionalized polymer comprising the steps of preparing a pseudo-living polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst, where said pseudo-living polymer is characterized by having greater than about 85 percent of the polymer in the cis microstructure and less than about 3 percent of the polymer is in the 1,2- or 3,4-microstructure, and reacting the pseudo-living polymer with at least one functionalizing agent defined by the formula (I) or (II)

where Z is a substituent that will react or interact with organic or inorganic fillers; R¹ is a single bond or a divalent organic group; R² is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R¹³ or R¹⁴; R³ is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R⁴ or R⁵; R¹³ is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R² or R¹⁴; R⁴ is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R³ or R⁵; R¹⁴ is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R² or R¹³; and R⁵ is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R³ or R⁴; with the proviso that each group attached to the imino carbon is attached via a carbon atom and R¹, R², R³, R⁴, R⁵, R¹³, R¹⁴ and Z are substituents that will not protonate a pseudo-living polymer.

Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide thin film layer is deposited onto the substrate.

A gate structure of a semiconductor device having a NFET and a PFET, includes a lower layer of a hafnium-based dielectric over the gates of the NFET and PFET, and an upper layer of a lanthanide dielectric. The dielectrics are annealed to mix them above the NFET resulting in a lowered work function, and corresponding threshold voltage reduction. An annealed, relatively thick titanium nitride cap over the mixed dielectric above the NFET gate also lowers the work function and threshold voltage. Above the TiN cap and the hafnium-based dielectric over the PFET gate, is another layer of titanium nitride that has not been annealed. A conducting layer of tungsten covers the structure.

A method for preparing a functionalized polymer, the method comprising the steps of (i) polymerizing conjugated diene monomer by employing a lanthanide-based catalyst to form a reactive polymer, and (ii) reacting the reactive polymer with a nitro compound.

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR¹R²)_x, or

wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R¹ and R² is same or different and is independently selected from H, aryl, perfluoroaryl, C₁-C₈ alkyl, C₁-C₈ perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula H_xSiA_y(NR¹R²)_4-x-y or

wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R¹ and R² is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C₁-C₈ alkyl, and C₁-C₈ perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO₂ gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

A method of growing single-crystals of a cubic (zinc blende) form of gallium nitride, the method comprising the steps of: placing into a reaction tube or acid resistant vessel a gallium source, anhydrous ammonia, an acid mineralizer and a metal halide salt selected from the group consisting of alkali metal halides, copper halides, tin halides, lanthanide halides and combinations thereof; closing said reaction tube or vessel; heating said reaction tube; cooling said reaction tube or vessel; and collecting single-crystals of cubic (zinc blende) form of GaN; wherein said reaction tube or vessel has a temperature gradient with a hot zone of at least 250° C., wherein said reaction tube or vessel has a temperature gradient with a cool zone of at least 150° C., and wherein said acid mineralizer has a sufficient concentration to permit chemical transport of GaN in said reaction tube or vessel from said hot zone to said cool zone due to said temperature gradient within said reaction tube or vessel.

Scintillator materials based on certain types of halide-lanthanide matrix materials are described. In one embodiment, the matrix material contains a mixture of lanthanide halides, i.e., a solid solution of at least two of the halides, such as lanthanum chloride and lanthanum bromide. In another embodiment, the matrix material is based on lanthanum iodide alone, which must be substantially free of lanthanum oxyiodide. The scintillator materials, which can be in monocrystalline or polycrystalline form, also include an activator for the matrix material, e.g., cerium. Radiation detectors that use the scintillators are also described, as are related methods for detecting high-energy radiation.

Perovskite-type catalyst consists essentially of a metal oxide composition is provided. The metal oxide composition is represented by the general formula A.sub.1-x B.sub.x MO.sub.3, in which A is a mixture of elements originally in the form of single phase mixed lanthanides collected from bastnasite; B is a divalent or monovalent cation; M is at least one element selected from the group consisting of elements of an atomic number of from 22 to 30, 40 to 51, and 73 to 80; and x is a number defined by 0.ltoreq.x<0.5.

One aspect of the present invention relates to a microsphere, comprising a hydrophilic polymer comprising a plurality of pendant anionic groups; a transition-metal, lanthanide or group 13-14 metal oxide, polyoxometalate or metal hydroxide or combination thereof; and a first radioisotope that emits a therapeutic β-particle. In certain embodiments, the microsphere further comprsies a second radioisotope that emits a diagnostic γ-ray; wherein the atomic number of the first radioisotope is not the same as the atomic number of the second radioisotope. In certain embodiments, the microsphere is composed of polymer impregnated with zirconia bound to ³²p as the source of the therapeutic β-emissions and ⁶⁷Ga as the source of the diagnostic γ-emissions. Another aspect of the present invention relates to the preparation of a microsphere impregnated with a radioisotope that emits therapeutic β-particles and a radioisotope that emits diagnostic β-emitting radioisotope and a γ-emitting radioistope; wherein the atomic number of the first radioisotope is not the same as the atomic number of the second radioisotope. In certain embodiments, said microspheres are administered to the patient through a catheter. In another embodiment, the microsphere is combined with the radioisotopes at the site of treatment.

A thermoelectric composition comprises a material represented by the general formula

(Ag_aX_1−a)_1±x(Sn_bPb_1−b)_mM′_1−yQ_2+m

wherein X is Na, K, or a combination of Na and K in any proportion; M′ is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ≦1; x and y are independently >0 and <1; and 2≦m≦30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.