75results about "Discharge tube solid anodes" patented technology

Novel two-phase yellow phosphors are disclosed having a peak emission intensity at wavelengths ranging from about 555 nm to about 580 nm when excited by a radiation source having a wavelength ranging from 220 nm to 530 nm. The present phosphors may be represented by the formula a[Sr_x(M1)_1-x]_zSiO₄●(1-a)[Sr_y(M2)_1-y]_uSiO₅:Eu²⁺D, wherein M1 and M2 are at least one of a divalent metal such as Ba, Mg, Ca, and Zn, the values of a, x, y, z and u follow the following relationships: 0.6≦a≦0.85; 0.3≦x≦0.6; 0.85≦y≦1; 1.5≦z≦2.5; 2.6≦u≦3.3; and Eu and D each range from 0.001 to about 0.5. D is an anion selected from the group consisting of F, Cl, Br, S, and N, and at least some of the D anion replaces oxygen in the host silicate lattice of the phosphor. The present yellow phosphors have applications in high brightness white LED illumination systems, LCD display panels, plasma display panels, and yellow LEDs and illumination systems.

It is an object of the present invention to provide a novel triazole derivative. Further, it is another object of the present invention to provide a light-emitting element having high luminous efficiency with the use of the novel triazole derivative. Moreover, it is still another object of the present invention to provide a light-emitting device and electronic devices which have low power consumption. A light-emitting element having high luminous efficiency can be manufactured with the use of a triazole derivative which is a 1,2,4-triazole derivative, in which an aryl group or a heteroaryl group is bonded to each of 3-position, 4-position, and 5-position, and in which any one of the aryl group or heteroaryl group has a 9H-carbazol-9-yl group.

A structure includes a substrate and a metallized carbon nano-structure extending from a portion of the substrate. In a method of making a metallized carbon nanostructure, at least one carbon structure formed on a substrate is placed in a furnace. A metallic vapor is applied to the carbon nanostructure at a preselected temperature for a preselected period of time so that a metallized nanostructure

The present invention relates to a composition for forming an electron emission source for use in an electron emission device and an electron emission source prepared therefrom. The composition comprises an organic binder resin, a carbon-based material, a solvent and a silane-based compound. Also provided is a photosensitive composition for forming an electron emission source comprising an organic binder resin, a carbon-based material, a solvent, a photosensitive component selected from the group consisting of photosensitive monomers, photosensitive oligomers and photosensitive polymers, a photoinitiator and a silane-based compound of the general form R′—SiR₃, where R is selected from the group consisting of alkoxys, alkyls, chloro, fluoro and bromo, and R′ is selected from the group consisting of vinyl, epoxy, methacryl, amino, mercapto and 2-(3,4-epoxycyclohexyl)ethyl. The composition imparts superior adhesive force, thereby increasing the effective radiation area, and improving the electron emission efficiency of the electron emission device.

The invention disclose a preparation method of ethyl silicon oil magnetic liquid, aiming at providing ethyl silicon oil magnetic liquid and the preparation method to overcome the drawbacks of the prior art. The granularity of the magnetic grains is even and the mean grain diameter is 8 to 9 nm without gathering. The ethyl silicon oil magnetic liquid is possessed with a series of special performances of the ethyl silicon oil and good low temperature resistance. The preparation method does not separate out any deposit and can still keep fluid putting at standstill and minus 12 DEG C for one month. The saturation intensity can reach 20.0 emu/g tested by vibrating sample magnetometer. The preparation method of ethyl silicon oil magnetic liquid has the advantages of high magnetism, steady dispersion, simple method and low requirement to the equipments.

A barium-free electron emissive material comprises a barium-free metal oxide composition and operable to emit electrons on excitation. A lamp including an envelope, an electrode including a barium-free electron emissive material and a discharge material, is also disclosed.

An electron emitter has an emitter made of a dielectric material and an upper electrode and a lower electrode for being supplied with a drive voltage for emitting electrons. The upper electrode is disposed on an upper surface of the emitter, and the lower electrode is disposed on a lower surface of the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. Each of the through regions of the upper electrode has a peripheral portion having a surface facing the emitter and spaced from the emitter.

An electron emitter 10A has an emitter 12 made of a dielectric material and an upper electrode 14 and a lower electrode 16 for being supplied with a drive voltage Va for emitting electrons. The upper electrode 14 is disposed on an upper surface of the emitter, and the lower electrode 16 is disposed on a lower surface of the emitter 12. The upper electrode 14 has a plurality of through regions 20 through which the emitter 12 is exposed. Each of the through regions 20 of the upper electrode 14 has a peripheral portion 26 having a surface facing the emitter 12 and spaced from the emitter 12.

Disclosed are phosphor compositions having the formula (RE_1-yCe_y)Mg_2-xLi_xSi_3-xP_xO₁₂, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1. When combined with at least one additional phosphor and subjected to radiation from a blue or UV LED, these phosphors can provide white light sources with good color quality having high CRI over a large color temperature range. Also disclosed are blends of the above phosphors and additional phosphors.

A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

An emitter includes a single crystal electron source, an epitaxial layer, and a thin conductor layer. When an electric field is induced from the conductor across the epitaxial layer, electrons are emitted from the electron source, transported through the epitaxial layer, and are emitted from the conductor layer.

The invention provides an exponential-doping GaN ultraviolet photocathode material structure and a preparation method thereof. The structure is formed from a substrate, an unintentionally doped AlN buffer layer, a p-type exponential-doping GaN photoelectric transmission layer and a Cs or Cs/O activation layer which are arranged from bottom to top, wherein the unintentionally doped AlN buffer layer is grown on the substrate; the p-type exponential-doping GaN photoelectric transmission layer is epitaxially grown on the AlN buffer layer; and the Cs or Cs/O activation layer is adsorbed on the front surface of the p-type exponential-doping GaN photoelectric transmission layer. The exponential-doping GaN ultraviolet photocathode material structure has the following advantages: as the exponential-doping GaN photoelectric transmission layer is adopted, the runaway depth of the photo-induced electrons in the transmission layer is increased, and the probability of transmitting the electrons in the transmission layer to the vacuum is improved, thus improving the total quantum efficiency of the GaN ultraviolet photocathode and achieving higher ultraviolet sensitivity; and due to wide application of the exponential function in the technical field of engineering, the adoption of the exponential-doping GaN transmission layer facilitates theoretic design, theoretic simulation and data optimization.

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

A higher performance dielectric device is provided. An electron emitter applying the dielectric device according to the present invention includes an emitter formed of a dielectric, and an upper electrode and a lower electrode to which a drive voltage is applied to cause electron emission. The emitter includes plural dielectric particles, and plural dielectric particles of smaller particle size which are filled in spaces between the plural dielectric particles. The emitter having the aforesaid construction is formed by an aerosol deposition method or a sol impregnation method.