76results about "Discharge tube solid anodes" patented technology

A phosphor comprises: (a) at least a first metal selected from the group consisting of yttrium and elements of lanthanide series other than europium; (b) at least a second metal selected from the group consisting of aluminum, gallium, indium, and scandium; (c) boron; and (d) europium. The phosphor is used in light source that comprises a UV radiation source to convert UV radiation to visible light.

Novel orange phosphors are disclosed having the comprise silicate-based compounds having the formula (Sr,A1)x,(Si,A2)(O,A3)2+x:Eu2+, where A1 is at least one divalent cation (a 2+ ion) including Mg, Ca, Ba, or Zn, or a combination of 1+ and 3+ cations; A2 is a 3+, 4+, or 5+ cation, including at least one of B, Al, Ga, C, Ge, P; A3 is a 1−, 2−, or 3− anion, including F, Cl, and Br; and x is any value between 2.5 and 3.5, inclusive. The formula is written to indicate that the A1 cation replaces Sr; the A2 cation replaces Si, and the A3 anion replaces O. These orange phosphors are configured to emit visible light having a peak emission wavelength greater than about 565 nm. They have applications in white LED illumination systems, plasma display panels, and in orange and other colored LED systems.

Novel two-phase yellow phosphors are disclosed having a peak emission intensity at wavelengths ranging from about 555 nm to about 580 nm when excited by a radiation source having a wavelength ranging from 220 nm to 530 nm. The present phosphors may be represented by the formula a[Srx(M1)1-x]zSiO4●(1-a)[Sry(M2)1-y]uSiO5:Eu2+D, wherein M1 and M2 are at least one of a divalent metal such as Ba, Mg, Ca, and Zn, the values of a, x, y, z and u follow the following relationships: 0.6≦a≦0.85; 0.3≦x≦0.6; 0.85≦y≦1; 1.5≦z≦2.5; 2.6≦u≦3.3; and Eu and D each range from 0.001 to about 0.5. D is an anion selected from the group consisting of F, Cl, Br, S, and N, and at least some of the D anion replaces oxygen in the host silicate lattice of the phosphor. The present yellow phosphors have applications in high brightness white LED illumination systems, LCD display panels, plasma display panels, and yellow LEDs and illumination systems.

The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes nanotubes which have been subjected to energy, plasma, chemical, or mechanical treatment. The present invention also relates to a field emission cathode comprising carbon nanotubes which have been subject to such treatment. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been subject to such treatment is further disclosed.

Phosphor compositions having the formulas (Tb1−x−y−z−wYxGdyLuzCew)3MrAls−rO12+δ, where M is selected from Sc, In, Ga, Zn, or Mg, and where 0<w≦0.3, 0≦x<1, 0≦y≦0.4, 0≦z<1, 0≦r≦4.5, 4.5≦s≦6, and −1.5≦δ≦1.5; (RE1−x−yScxCey)2A3−pBpSiz−qGeqO12+δ, where RE is selected from a lanthanide ion or Y3+, A is selected from Mg, Ca, Sr, or Ba, B is selected from Mg and Zn, and where 0≦p≦3, 0≦q≦3, 2.5≦z≦3.5, 0≦x≦1, 0≦y≦0.3, −1.5≦δ≦1.5; and (Ca1−x−y−zSrxBayCez)3(Sc1−a−cLuaDc)2Sin−wGewO12+δ, where D is either Mg or Zn, 0≦x<1, 0≦y<1, 0<z≦0.3, 0≦a<1, 0≦c≦1, 0≦w≦3, 2.5≦n≦3.5, and −1.5≦δ≦1.5. Also disclosed are light emitting devices including a light source and at least one of the above phosphor compositions.

Novel two-phase yellow phosphors are disclosed having a peak emission intensity at wavelengths ranging from about 555 nm to about 580 nm when excited by a radiation source having a wavelength ranging from 220 nm to 530 nm. The present phosphors may be represented by the formula a[Srx(M1)1−x]zSiO4.(1-a)[Sry(M2)1−y]uSiO5:Eu2+D, wherein M1 and M2 are at least one of a divalent metal such as Ba, Mg, Ca, and Zn, the values of a, x, y, z and u follow the following relationships: 0.6≦a≦0.85; 0.3≦x≦0.6; 0.85≦y≦1; 1.5≦z≦2.5; 2.6≦u≦3.3; and Eu and D each range from 0.001 to about 0.5. D is an anion selected from the group consisting of F, Cl, Br, S, and N, and at least some of the D anion replaces oxygen in the host silicate lattice of the phosphor. The present yellow phosphors have applications in high brightness white LED illumination systems, LCD display panels, plasma display panels, and yellow LEDs and illumination systems.

Novel orange phosphors are disclosed having the comprise silicate-based compounds having the formula (Sr,A1)x,(Si,A2)(O,A3)2+x:Eu2+, where A1 is at least one divalent cation (a 2+ ion) including Mg, Ca, Ba, or Zn, or a combination of 1+ and 3+ cations; A2 is a 3+, 4+, or 5+ cation, including at least one of B, Al, Ga, C, Ge, P; A3 is a 1−, 2−, or 3− anion, including F, Cl, and Br; and x is any value between 2.5 and 3.5, inclusive. The formula is written to indicate that the A1 cation replaces Sr; the A2 cation replaces Si, and the A3 anion replaces O. These orange phosphors are configured to emit visible light having a peak emission wavelength greater than about 565 nm. They have applications in white LED illumination systems, plasma display panels, and in orange and other colored LED systems.

Disclosed are phosphor compositions having the formula (RE1-yCey)Mg2-xLixSi3-xPxO12, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1. When combined with at least one additional phosphor and subjected to radiation from a blue or UV LED, these phosphors can provide white light sources with good color quality having high CRI over a large color temperature range. Also disclosed are blends of the above phosphors and additional phosphors.

It is an object of the present invention to provide a novel triazole derivative. Further, it is another object of the present invention to provide a light-emitting element having high luminous efficiency with the use of the novel triazole derivative. Moreover, it is still another object of the present invention to provide a light-emitting device and electronic devices which have low power consumption. A light-emitting element having high luminous efficiency can be manufactured with the use of a triazole derivative which is a 1,2,4-triazole derivative, in which an aryl group or a heteroaryl group is bonded to each of 3-position, 4-position, and 5-position, and in which any one of the aryl group or heteroaryl group has a 9H-carbazol-9-yl group.

A structure includes a substrate and a metallized carbon nano-structure extending from a portion of the substrate. In a method of making a metallized carbon nanostructure, at least one carbon structure formed on a substrate is placed in a furnace. A metallic vapor is applied to the carbon nanostructure at a preselected temperature for a preselected period of time so that a metallized nanostructure

The present invention relates to a composition for forming an electron emission source for use in an electron emission device and an electron emission source prepared therefrom. The composition comprises an organic binder resin, a carbon-based material, a solvent and a silane-based compound. Also provided is a photosensitive composition for forming an electron emission source comprising an organic binder resin, a carbon-based material, a solvent, a photosensitive component selected from the group consisting of photosensitive monomers, photosensitive oligomers and photosensitive polymers, a photoinitiator and a silane-based compound of the general form R′—SiR3, where R is selected from the group consisting of alkoxys, alkyls, chloro, fluoro and bromo, and R′ is selected from the group consisting of vinyl, epoxy, methacryl, amino, mercapto and 2-(3,4-epoxycyclohexyl)ethyl. The composition imparts superior adhesive force, thereby increasing the effective radiation area, and improving the electron emission efficiency of the electron emission device.

The invention disclose a preparation method of ethyl silicon oil magnetic liquid, aiming at providing ethyl silicon oil magnetic liquid and the preparation method to overcome the drawbacks of the prior art. The granularity of the magnetic grains is even and the mean grain diameter is 8 to 9 nm without gathering. The ethyl silicon oil magnetic liquid is possessed with a series of special performances of the ethyl silicon oil and good low temperature resistance. The preparation method does not separate out any deposit and can still keep fluid putting at standstill and minus 12 DEG C for one month. The saturation intensity can reach 20.0 emu / g tested by vibrating sample magnetometer. The preparation method of ethyl silicon oil magnetic liquid has the advantages of high magnetism, steady dispersion, simple method and low requirement to the equipments.

A releasable anode liner that is fitted within the interior of the anode of an ion source. The cover permits electrons to be projected into the anode wherein any insulating deposits adhere to the interior of the anode liner, thereby increasing the effective life of the anode without premature replacement or repair.

A releasable anode liner that is fitted within the interior of the anode of an ion source. The cover permits electrons to be projected into the anode wherein any insulating deposits adhere to the interior of the anode liner, thereby increasing the effective life of the anode without premature replacement or repair.

An electron emissive composition comprises a barium tantalate composition in an amount of about 50 to about 95 wt %; and a ferroelectric oxide composition in an amount of about 5 to about 50 wt %, wherein the weight percents are based on the total weight of the barium tantalate composition and the ferroelectric oxide composition. A method for manufacturing an electron emissive composition comprises blending a barium tantalate composition in an amount of about 50 to about 95 wt % with a ferroelectric oxide composition in an amount of about 5 to about 50 wt % to form an electron emissive precursor composition, wherein the weight percents are based on the total weight of the barium tantalate composition and the ferroelectric oxide composition; and sintering the composition at a temperature of about 1000° C. to about 1700° C.

A flat panel display reduces the line resistance of a driving power supply line and prevents a voltage drop in the driving power supply line so as to obtain uniform resolution and luminance. The flat panel display includes a substrate, a display region formed on the substrate, the display region having a self-luminescent element and VDD lines that supply a driving potential power and / or a source current to the self-luminescent element. Further, a covering member for sealing the display region at least, the covering member being adhered to the substrate to face the substrate and a terminal region formed on one or more edges of the substrate, the terminal region having one or more driving power terminals are provided. In addition, a driving power supply line that connects the driving power terminals to the VDD lines of the display region and a bus conductive unit that is electrically connected to the driving power supply line are provided.

A barium-free electron emissive material comprises a barium-free metal oxide composition and operable to emit electrons on excitation. A lamp including an envelope, an electrode including a barium-free electron emissive material and a discharge material, is also disclosed.

An electron emitter 10A has an emitter 12 made of a dielectric material and an upper electrode 14 and a lower electrode 16 for being supplied with a drive voltage Va for emitting electrons. The upper electrode 14 is disposed on an upper surface of the emitter, and the lower electrode 16 is disposed on a lower surface of the emitter 12. The upper electrode 14 has a plurality of through regions 20 through which the emitter 12 is exposed. Each of the through regions 20 of the upper electrode 14 has a peripheral portion 26 having a surface facing the emitter 12 and spaced from the emitter 12.

Disclosed are phosphor compositions having the formula (RE1-yCey)Mg2-xLixSi3-xPxO12, where RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and 0.001<y<0.1. When combined with at least one additional phosphor and subjected to radiation from a blue or UV LED, these phosphors can provide white light sources with good color quality having high CRI over a large color temperature range. Also disclosed are blends of the above phosphors and additional phosphors.

A frame shuttered CMOS image sensor with simultaneous array readout. An array of CMOS pixels are printed on a silicon substrate. Within each pixel is a light sensitive region comprising a photo sensitive diode for converting photons into electrical charge and at least three transistors to permit reading of reset electrical charges and collected electrical charges and for re-setting the photosensitive diode. The sensor includes an array of signal and re-set readout capacitors located on the substrate but outside of the pixel array. Metal conductors printed in said substrate connect each pixel in said pixel array with a signal capacitor and a re-set capacitor in array of signal and re-set readout capacitors. Transistor switches printed in said substrate but outside of said pixel array are used to isolate the signal and re-set capacitors from each other and from the pixels. Control circuitry is provided for re-setting simultaneously each of the pixels in the pixel array, for collecting simultaneously re-set signals from each pixel on to one of the reset capacitors in the array of readout capacitors and for collecting simultaneously integrated pixel signals from each pixel on to one of the signal capacitors in the array of readout capacitors. Readout circuitry is provided for reading charges collected on the array of signal and re-set capacitors.

A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

The present invention relates to a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of protruding base structures (104) arranged on a surface of a first substrate (102), providing a seed layer mixture, comprising a solvent / dispersant and a seed material, in contact with the protruding base structures, providing a second substrate arranged in parallel with the first substrate adjacent to the protruding base structures, thereby enclosing a majority of the seed layer mixture between the first and second substrates, evaporating the solvent, thereby forming a seed layer (110) comprising the seed material on the protruding base structures, removing the second substrate, providing a growth mixture, comprising a growth agent, in contact with the seed layer, and controlling the temperature of the growth mixture so that nanostructures (114) are formed on the seed layer via chemical reaction in presence of the growth agent.

An emitter includes a single crystal electron source, an epitaxial layer, and a thin conductor layer. When an electric field is induced from the conductor across the epitaxial layer, electrons are emitted from the electron source, transported through the epitaxial layer, and are emitted from the conductor layer.

The invention provides an exponential-doping GaN ultraviolet photocathode material structure and a preparation method thereof. The structure is formed from a substrate, an unintentionally doped AlN buffer layer, a p-type exponential-doping GaN photoelectric transmission layer and a Cs or Cs / O activation layer which are arranged from bottom to top, wherein the unintentionally doped AlN buffer layer is grown on the substrate; the p-type exponential-doping GaN photoelectric transmission layer is epitaxially grown on the AlN buffer layer; and the Cs or Cs / O activation layer is adsorbed on the front surface of the p-type exponential-doping GaN photoelectric transmission layer. The exponential-doping GaN ultraviolet photocathode material structure has the following advantages: as the exponential-doping GaN photoelectric transmission layer is adopted, the runaway depth of the photo-induced electrons in the transmission layer is increased, and the probability of transmitting the electrons in the transmission layer to the vacuum is improved, thus improving the total quantum efficiency of the GaN ultraviolet photocathode and achieving higher ultraviolet sensitivity; and due to wide application of the exponential function in the technical field of engineering, the adoption of the exponential-doping GaN transmission layer facilitates theoretic design, theoretic simulation and data optimization.

A high dose output, through transmission target X-ray tube and methods of use includes, in general an X-ray tube for accelerating electrons under a high voltage potential having an evacuated high voltage housing, a hemispherical shaped through transmission target anode disposed in said housing, a cathode structure to deflect the electrons toward the hemispherical anode disposed in said housing, a filament located in the geometric center of the anode hemisphere disposed in said housing, a power supply connected to said cathode to provide accelerating voltage to the electrons.

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

An apparatus and / or method for controlling an ion beam may be provided, and / or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.

A higher performance dielectric device is provided. An electron emitter applying the dielectric device according to the present invention includes an emitter formed of a dielectric, and an upper electrode and a lower electrode to which a drive voltage is applied to cause electron emission. The emitter includes plural dielectric particles, and plural dielectric particles of smaller particle size which are filled in spaces between the plural dielectric particles. The emitter having the aforesaid construction is formed by an aerosol deposition method or a sol impregnation method.

A method for manufacturing an anodic structure includes the steps of: providing a carbon nanotube slurry and a glass structure; applying a carbon nanotube slurry layer onto the glass structure; drying the carbon nanotube slurry layer on the glass structure; applying a phosphor layer on the carbon nanotube slurry layer; and solidifying the carbon nanotube slurry layer and the phosphor layer on the glass structure at an approximate temperature of 300˜500° C. and under protection of an inert gas to form the anodic structure.