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206180 results about "Physical chemistry" patented technology
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Physical chemistry is the study of macroscopic, atomic, subatomic, and particulate phenomena in chemical systems in terms of the principles, practices, and concepts of physics such as motion, energy, force, time, thermodynamics, quantum chemistry, statistical mechanics, analytical dynamics and chemical equilibrium.
Process and apparatus for organic vapor jet deposition
ActiveUS7431968B1Good directionSharp pixelVacuum evaporation coatingSputtering coatingOrganic filmVacuum chamber
Owner:THE TRUSTEES FOR PRINCETON UNIV
Low energy carbonylation process
InactiveUS6657078B2Weaken energyHigh purityOrganic compound preparationOrganic chemistry methodsPropanoic acidIodide
A low energy process for producing acetic acid by the carbonylation of methanol is disclosed. The process involves a rhodium-catalyzed system operated at less than about 14% water utilizing up to 2 distillation columns. The process is preferably controlled such that the product stream has a low level of propionic acid impurity and the level of aldehyde impurities is minimized by way of aldehyde removal or minimizing aldehyde generation. The level of iodides is controlled by contacting the product, at elevated temperatures, with ion exchange resins. In preferred embodiments, at least one silver or mercury exchanged macroreticular strong acid ion exchange resin is used to purify the product. The high temperature treatment provides the added benefit of controlling the Color Value (Pt-Co units) of the product stream.
Owner:CELANESE INT CORP
Low Temperature Deposition of Silicon-Containing Films
ActiveUS20100304047A1Low deposition temperatureSemiconductor/solid-state device manufacturingSpecial surfacesLow temperature depositionDeposition temperature
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
Owner:TOKYO ELECTRON LTD +1
Doping of dielectric layers
InactiveUS20130217243A1Increase etch tolerancePrevent shrinkageSemiconductor/solid-state device manufacturingDeposition temperaturePhysical chemistry
Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and / or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
Owner:APPLIED MATERIALS INC
Method of Forming Insulation Film by Modified PEALD
ActiveUS20100124621A1Increase coverageImprove throughputSemiconductor/solid-state device manufacturingChemical vapor deposition coatingEngineeringPhysical chemistry
Owner:ASM JAPAN
Atomic layer deposition method of depositing an oxide on a substrate
The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.
Owner:MICRON TECH INC
Passivating ALD reactor chamber internal surfaces to prevent residue buildup
InactiveUS20060040054A1Minimizing undesired chemisorptionReduce accumulationChemical vapor deposition coatingImproved methodDeposition process
This invention is directed to an improved method for preventing deposition residue buildup on the internal surfaces of an ALD reactor chamber. In an ALD deposition process, the surfaces of a substrate are treated with an initiating precursor generating a labile atom reactive with a deposition precursor. Excess initiating precursor is removed from the reactor and the substrate surface then is exposed to a deposition precursor reactive with the labile atom under conditions for generating a fugitive reaction product containing the labile atom and leaving a deposition product. The process is repeated generating alternate layers of initiation and deposition precursor reaction products. The improvement in the ALD process resides in passivating the internal surfaces of the reactor by removing labile atoms reactable with either the initiating or deposition precursors prior to effecting ALD deposition.
Owner:VERSUM MATERIALS US LLC
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
ActiveUS20070281496A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingGas phaseSilicon oxide
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
Owner:APPLIED MATERIALS INC
Process chamber for dielectric gapfill
InactiveUS20070281106A1Electric discharge tubesSemiconductor/solid-state device manufacturingRemote plasmaDistribution system
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
Owner:APPLIED MATERIALS INC
Modified oxygen reduced valve metal oxides
InactiveUS6639787B2Maintain good propertiesWear minimizationOxide/hydroxide preparationLiquid electrolytic capacitorsFluidized bedPhysical chemistry
Owner:GLOBAL ADVANCED METALS USA
Methods of forming silicon dioxide layers using atomic layer deposition
InactiveUS20070111545A1Good step coverageReduce trap densitySemiconductor/solid-state device manufacturingChemical vapor deposition coatingOptoelectronicsOxygen
Provided herein are methods of forming a silicon dioxide layer on a substrate using an atomic layer deposition (ALD) method that include supplying a Si precursor to the substrate and forming on the substrate a Si layer including at least one Si atomic layer; and (b) supplying an oxygen radical to the Si layer to replace at least one Si—Si bond within the Si layer with a Si—O bond, thereby oxidizing the Si layer, to form a silicon dioxide layer on the substrate.
Owner:SAMSUNG ELECTRONICS CO LTD
Method and apparatus for cleaning and method and apparatus for etching
InactiveUS20050020071A1Increase flexibilityImprove securitySemiconductor/solid-state device manufacturingChemical vapor deposition coatingProcess engineeringForming gas
A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF3. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
Systems and methods for ion species analysis with enhanced condition control and data interpretation
ActiveUS20050253061A1Reduces spectral peak overlapHigh resolutionTime-of-flight spectrometersMaterial analysis by electric/magnetic meansSystems approachesComputer science
The invention relates generally to ion mobility based systems, methods and devices for analyzing samples and, more particularly, to sample detection using enhanced condition control and data interpretation.
Owner:DH TECH DEVMENT PTE
Atomic layer deposition of high k metal silicates
InactiveUS20060228888A1Reduce carbon pollutionReduce stepsSolid-state devicesSemiconductor/solid-state device manufacturingHafniumAtomic layer deposition
The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
Owner:AVIZA TECHNOLOGY INC +1
Sequential UV induced chemical vapor deposition
Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
Owner:NOVELLUS SYSTEMS
Method for treating a semiconductor surface to form a metal-containing layer
ActiveUS7132360B2Semiconductor/solid-state device manufacturingChemical vapor deposition coatingMaterial growthPhysical chemistry
A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.
Owner:NXP USA INC +1
Formation of well-controlled thin SiO, SiN, SiN, SiON layer for multilayer high-K dielectric applications
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.
Owner:ADVANCED MICRO DEVICES INC
Metal organic chemical vapor deposition equipment
InactiveUS20080006208A1Uniform film thicknessImprove formation efficiencyAfter-treatment apparatusFrom chemically reactive gasesSusceptorProduct gas
Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.
Owner:SUMITOMO ELECTRIC IND LTD
High-temperature characterization of polymers
InactiveUS6260407B1Avoid backlogImprove throughputSequential/parallel process reactionsComponent separationElutionChromatography column
Rapid characterization and screening of polymer samples to determine average molecular weight, molecular weight distribution and other properties is disclosed. Rapid flow characterization systems and methods, including liquid chromatography and flow-injection analysis systems and methods are preferably employed. High throughput, automated sampling systems and methods, high-temperature characterization systems and methods, and rapid, indirect calibration compositions and methods are also disclosed. In preferred high-temperature embodiments, the polymer sample is maintained at a temperature of not less than about 75° C. during sample preparation, loading into a liquid chromatography or flow-injection analysis system, injection into a mobile phase of a liquid chromatography or flow-injection analysis system, and / or elution from chromatographic column. The described methods, systems, and device have primary applications in combinatorial polymer research and in industrial process control.
Owner:INTERMOLECULAR
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
ActiveUS8877655B2Enhance growth rate and uniformityUniform growthLiquid surface applicatorsSemiconductor/solid-state device manufacturingNitrogenOptoelectronics
Owner:ASM IP HLDG BV
Low-Oxidation Plasma-Assisted Process
ActiveUS20150315704A1Improve film qualitySuppressing of layerElectric discharge tubesSemiconductor/solid-state device manufacturingEngineeringOxide
A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and / or the first period of time is shorter than the second period of time.
Owner:ASM IP HLDG BV
Method of manufacturing charge storage device
InactiveUS7405166B2Increase electrode areaEasy to produceSolid-state devicesSemiconductor/solid-state device manufacturingCapacitanceHydrogen fluoride
Owner:IND TECH RES INST
Silicon oxide film formation method
InactiveUS6955836B2Improve efficiencyQuality improvementSemiconductor/solid-state device manufacturingChemical vapor deposition coatingPhysical chemistrySilicon oxide
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
Owner:ANELVA CORP +1
Long persistent phosphors and persistent energy transfer technique
The invention provides long-persistent phosphors, methods for their manufacture and phosphorescent articles. The invention also provides a method for generating a long-persistent phosphorescence at a selected color. The phosphors of the invention may be alkaline earth aluminates, alkaline earth silicates, and alkaline earth aluminosilicates. The phosphors include those activated by cerium. The phosphors also include those in which persistent energy transfer occurs from a donor ion to an acceptor ion, producing persistent emission largely characteristic of the acceptor ion.
Owner:UNIV OF GEORGIA RES FOUND INC +1
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
InactiveUS20100255625A1Comparable and good performanceSemiconductor/solid-state device manufacturingChemical vapor deposition coatingPlasma generatorProduct gas
Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space (1, 2). The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent, the plasma generator being arranged remote from the treatment space (1, 2).
Owner:FUJIFILM MFG EURO
Method of etching high aspect ratio features in a dielectric layer
Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O2, a fluorocarbon gas, and an optional inert gas. A plasma is formed from the gas mixture. Features are etched in the dielectric layer through the openings in the presence of the plasma
Owner:APPLIED MATERIALS INC
Method of forming crystallographically stabilized doped hafnium zirconium based films
ActiveUS20080233288A1Improve material propertiesImprove material performanceSemiconductor/solid-state device manufacturingChemical vapor deposition coatingRare-earth elementDopant
A method is provided for forming doped hafnium zirconium based films by atomic layer deposition (ALD) or plasma enhanced ALD (PEALD). The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a hafnium precursor, a gas pulse containing a zirconium precursor, and a gas pulse containing one or more dopant elements. The dopant elements may be selected from Group II, Group XIII, silicon, and rare earth elements of the Periodic Table. Sequentially after each precursor and dopant gas pulse, the substrate is exposed to a gas pulse containing an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas. In alternative embodiments, the hafnium and zirconium precursors may be pulsed together, and either or both may be pulsed with the dopant elements. The sequential exposing steps may be repeated to deposit a doped hafnium zirconium based film with a predetermined thickness.
Owner:TOKYO ELECTRON LTD
Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
InactiveUS20070237697A1Rare earth metal compoundsChemical vapor deposition coatingAluminiumAluminate
A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxide or an aluminate. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxide or aluminate layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.
Owner:TOKYO ELECTRON LTD
Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device
InactiveUS20080277715A1Improve wiring speedLow working voltageTransistorSemiconductor/solid-state device detailsDielectricHydrogen
Owner:FOUND FOR ADVANCEMENT OF INT SCI
Nitrogen profile engineering in nitrided high dielectric constant films
InactiveUS20080081113A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingRare-earth elementNitrogen
A method of forming a nitrided high-k film by disposing a substrate in a process chamber and forming the nitrided high-k film on the substrate by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. The oxygen-containing film and the nitrogen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table, and optionally aluminum, silicon, or aluminum and silicon. According to one embodiment, the method includes forming a nitrided hafnium based high-k film. The nitrided high-k film can be formed by atomic layer deposition (ALD) or plasma-enhanced ALD (PEALD).
Owner:TOKYO ELECTRON LTD
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