3623 results about "Hydrogen fluoride" patented technology

A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.

Disclosed herein are processes for the production of hydrofluoroolefins by dehydrofluorination. Also disclosed herein are processes for separation of hydrofluoroolefins from hydrofluorocarbons and from hydrogen fluoride.

In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.

An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Disclosed herein are azeotrope or near-azeotrope compositions comprising 2,3,3,3-tetrafluoropropene (HFC-1234yf) and hydrogen fluoride (HF). These compositions are useful in processes to produce and purify HFC-1234yf. Additionally, disclosed herein are processes for the manufacture of HFC-1234yf.

The present invention relates to an improved method for manufacturing 2-chloro-3,3,3,-trifluoropropene (HCFC-1233xf) by reacting 1,1,2,3-tetrachloropropene, 1,1,1,2,3-pentachloropropane, and/or 2,3,3,3-tetrachloropropene with hydrogen fluoride, in a vapor phase reaction vessel in the presence of a vapor phase fluorination catalyst and stabilizer. HCFC-1233xf is an intermediate in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf) which is a refrigerant with low global warming potential.

The invention provides an improved process to manufacture 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244bb) by reacting 2-chloro-3,3,3,-trifluoropropene (HCFO-1233xf) with hydrogen fluoride, in a liquid phase reaction in the presence of hydrogen chloride and a liquid phase fluorination catalyst. The hydrogen chloride is added into the reaction from an external source at a pressure of about 100 psig or more. The HCFC-244bb is an intermediate in the production of 2,3,3,3-tetrafluoropropene-1 (HFO-1234yf).

This invention relates a process for the manufacture of the HFO trans-1,3,3,3-tetrafluoropropene (HFO trans-1234ze). More particularly, the invention pertains to a process for the manufacture of the HFO trans-1234ze by first dehydrofluorinating 1,1,1,3,3-pentafluoropropane to thereby produce a mixture of cis-1,3,3,3-tetrafluoropropene, trans-1,3,3,3-tetrafluoropropene and hydrogen fluoride. Then optionally recovering hydrogen fluoride and then recovering trans-1,3,3,3-tetrafluoropropene.

A homogeneous compositions containing a fluorinated solvent, hydrogen fluoride, and a co-solvent, and the use of these compositions for cleaning and etching of substrates is described.

The invention provides an improved process to manufacture 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244bb) by reacting 2-chloro-3,3,3,-trifluoropropene (HCFO-1233xf) with hydrogen fluoride, in the presence of a fluorination catalyst, where by using 2-chloro-3,3,3,-trifluoropropene (HCFO-1233xf) of high purity, the need to add an oxidizing agent (typically chlorine) to keep the catalyst active can be avoided. The HCFC-244bb is then used as an intermediate in the production of 2,3,3,3-tetrafluoropropene-1 (HFO-1234yf).

The invention relates to the field of lithium batteries and lithium capacitors, in particular to a preparation method for difluorosulfimide lithium salt and application of the difluorosulfimide lithium salt. The preparation method for the difluorosulfimide lithium salt, provided by the invention, comprises the following steps: (1) performing fluorination reaction: synthetizing midbody difluorosulfimide from dichlorosulfimide and hydrogen fluoride under the action of a catalyst; (2) performing reaction between the difluorosulfimide obtained in the step 1 and alkaline lithium, and performing solid-liquid separation after the reaction to obtain an LiFSI product. The preparation method for the difluorosulfimide lithium salt, provided by the invention, is low in cost, few in by-product and simple in post-treatment, and the quality and the purity of the product are ensured, therefore the preparation method which is capable of obtaining the high-quality and high-purity product and is economic and practical is provided; the preparation method is suitable for industrial production.

The disclosed cover glass is produced by etching a glass substrate that has been formed by a down-drawing process, and chemically strengthening the glass substrate to provide the glass substrate with a compressive-stress layer on the principal surfaces thereof. The glass substrate contains, as components thereof, 50% to 70% by mass of SiO₂, 5% to 20% by mass of Al₂O₃, 6% to 30% by mass of Na₂O, and 0% to less than 8% by mass of Li₂O. The glass substrate may also contain 0% to 2.6% by mass of CaO, if necessary. The glass substrate has an etching characteristic in which the etching rate is at least 3.7 μm/minute in an etching environment having a temperature of 22° C. and containing hydrogen fluoride with a concentration of 10% by mass.

The present invention discloses a manufacturing process to produce high purity 1234yf from 245eb, which preferably includes the removal of impurities present in 245eb raw material, the dehydrofluorination of 245eb, and the removal of impurities present in final crude product. The disclosed manufacturing process allows the production of a 1234yf product with lower the levels of 1225ye and/or trifluoropropene, preferably in amounts of less than about 500, and 50 ppm, respectively.

Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.

A process for the manufacture of CF₃CH═CHF and/or CF₃CH═CF₂ is disclosed. The process involves involves (a) reacting HF and at least one halopropene of the formula CX₃CCI═CCIX (where each X is independently F or CI) to produce a product including both CF₃CCI═CF₂ and CF₃CHCICF₃; (b) reacting CF₃CCI═CF₂ and/or CF₃CHCICF₃ produced in (a) with hydrogen to produce a product including CF₃CH₂CHF₂ and/or CF₃CH₂CF₃; (c) dehydrofluorinating CF₃CH₂CHF₂ and/or CF₃CH₂CF₃ produced in (b) to produce a product comprising CF₃CH═CHF and/or CF₃CH═CF₂; and (d) recovering CF₃CH═CHF and/or CF₃CH═CF₂ from the product produced in (c). In (a), the CF₃CCI═CF₂ and CF₃CHCICF₃ are produced in the presence of a fluorination catalyst comprising at least one chromium-containing component selected from (i) a crystalline alpha-chromium oxide where at least 0.05 atom % of the chromium atoms in the alpha-chromium oxide lattice are replaced by divalent copper, and (ii) a chromium-containing composition of (i) which has been treated with a fluorinating agent.

1,1,3,3,3-Pentafluoropropene (CF₃CH═CF₂, HFC-1225zc) can be produced by pyrolyzing 1,1,1,3,3,3-hexafluoropropane (CF₃CH₂CF₃, HFC-236fa) in the absence of dehydrofluorination catalyst at temperatures of from about 700° C. to about 1000° C. and total pressures of about atmosphere pressure in an empty, tubular reactor, the interior surfaces of which comprise materials of construction resistant to hydrogen fluoride.

An integrated process for the manufacture of HFO trans-1,3,3,3-tetrafluoropropene (HFO trans-1234ze) by first catalytically dehydrofluorinating 1,1,1,3,3-pentafluoropropane to thereby produce a mixture of cis-1,3,3,3-tetrafluoropropene, trans-1,3,3,3-tetrafluoropropene and hydrogen fluoride. Then optionally recovering hydrogen fluoride, catalytically isomerizing cis-1234ze into trans-1234ze, and recovering trans-1,3,3,3-tetrafluoropropene.

The invention relates to the preparation of 1-chloro-1,1,3,3,3-pentafluoropropane (HCFC-235fa), useful as an intermediate in the production of 1,1,1,3,3-pentafluoropropane (HFC-245fa). The invention further relates to a process for the preparation of HFC-245fa comprising reacting HCFC-235fa with hydrogen in the presence of a reduction catalyst wherein the said HCFC-235fa is prepared by reacting CCl3CHCCl3 with hydrogen fluoride in the presence of fluorination catalyst in either the liquid phase or the vapor phase.

Provided are azeotropic and azeotrope-like compositions of 2-chloro-3,3,3-trifluoropropene (HCFO-1233xf) and hydrogen fluoride (HF). Such azeotropic and azeotrope-like compositions are useful as intermediates in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf).

A method of surface processing a substrate that enables deposit to be removed from a substrate so as to obtain a clean substrate. A substrate is cleaned with a liquid chemical. A deposit which is formed through the cleaning with liquid chemical is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The deposit that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.