4064 results about "Filler metal" patented technology

A method is provided for forming an improved interconnect structure on a semiconductor body. A first metal layer is deposited on the semiconductor body. A sacrificial layer having a height is deposited on the first metal layer. The sacrificial layer and the metal layer are patterned to form separate metal lines with the sacrificial layer remaining on said metal lines. A low-k material is then deposited to fill the gaps between metal lines and to cover the sacrificial layer. The low-k material is then removed to a level within the height of the sacrificial layer. The sacrificial layer is then removed. A protective layer is deposited on top of the metal lines and the low-k material. A dielectric layer is deposited over the protective layer. The protective layer protects the low-k material from attack by chemicals utilized by subsequent process steps to etch vias in the dielectric layer, to strip photo-resist, and to clean the vias. The protective layer is then selectively etched away to make contact between a via plug and the metal lines.

A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.

When a diamond is brazed to a metal substrate, while obtaining a stable joining strength, a joined interface of the diamond is not eroded to provide a good joint with a beautiful view. A brazing-filler material containing at least one selected from a group consisting of gold and silver, and copper as principal components, and further containing 0.001 to 5 mass % of vanadium is used. Preferably, a vanadium content is not more than 2.0 mass %, and more preferably not more than 0.5 mass %. Using this brazing-filler material, unidirectional solidification is performed from a side of diamond to form vanadium carbide in a joined interface in a shape of islands, and thereby an interface having a beautiful view with stable joining strength can be obtained. In addition, strong joining is possible also by a usual solidification method.

A friction stir welding tool includes a body having an upper surface defining an entrance opening and a lower surface, and a pin having a lower surface defining an exit opening, wherein the pin extends from the lower surface of the body. The friction stir welding tool further includes a passageway defined by the body and the pin from the entrance opening to the exit opening and is capable of allowing a filler material to pass therethrough. A friction stir welding method includes applying a frictional heating source to a workpiece to plasticize a volume of the workpiece and applying the frictional heating source to to a filler material to plasticize the filler material. The method further includes introducing the filler material into the volume of the workpiece and incorporating the filler material into the volume of the workpiece.

A method for forming a dual damascene structure in a carbon-based, low-K material. The process begins by providing a semiconductor structure having a first metal pattern thereover, wherein the first metal pattern has a first barrier layer thereon. An organic dielectric layer is formed on the first barrier layer, and a hard mask layer is formed on the dielectric layer. The hard mask layer and the dielectric layer are patterned to form a trench. A second barrier layer is formed over the hard mask layer and on the bottom and sidewalls of the trench. A barc layer is formed over the second barrier layer, thereby filling the trench. The barc layer, the second barrier layer, and the dielectric layer are patterned to form a via opening, preferably using a photoresist mask. The barc layer is patterned without faceting the edges of the via opening due to the second barrier layer. The barc layer and the etch mask are removed by the dielectric layer etch. The first barrier layer and the second barrier layer are removed. A third barrier layer is formed on the bottom and sidewalls of the trench, on the sidewalls of the via opening, and on the first metal pattern through the via opening. The trench and the via opening are filled with metal to form a damascene structure.

An obesity treatment device comprises a filament filler material movable between a substantially straight insertion/removal configuration and an operative configuration in which the filament extends along a predetermined curve to occupy a selected volume within the stomach and a retrieval device connected to a proximal end of the filler material facilitating grasping and withdrawal of the filler material. A method of treating obesity, comprises inserting to a desired position within the GI tract a filament filler in a substantially straight configuration and moving the filler into an operative configuration in which the filler curves along a predetermined path to define a desired volume in combination with, after a predetermined treatment period has elapsed, collapsing the filler into the substantially straight configuration for trans-oral removal.

A method of welding a gas turbine engine substrate composed of a gamma prime precipitation strengthened nickel based superalloy, including the steps of: applying weld beads on the substrate to form a continuous layer the thickness of the weld beads; using a filler material made of a first material exhibiting comparable strength and ductility as the substrate, and a second material exhibiting greater ductility than the substrate; and creating crack propagation mitigating regions within the continuous layer by increasing the percentage of the second material in the crack propagation mitigating regions over the percentage of the second material in the remainder of the continuous layer.

Devices and methods of fabricating vertical field effect transistors on semiconductor devices are provided. One intermediate semiconductor includes: a substrate, a bottom spacer layer above the substrate, a plurality of fins, wherein at least one fin is an n-fin and at least one fin is a p-fin; a high-k layer and a work function metal over the bottom spacer layer and around the plurality of fins; a top spacer above the high-k layer and the work function metal and surrounding a top area of the fins; a top source/drain structure over each fin; a dielectric capping layer over the top source/drain structure; a fill metal surrounding the work function metal; and a liner.

The invention discloses a carbon steel and stainless steel clad steel plate with toughness performance, and belongs to the technical field of production of metal clad plates. Carbon steel is a basal material, and satisfies the requirements of API5L "American Petroleum Pipeline Steel Specification"; 316L stainless steel is a multiple layer, and components satisfy the requirements of ASTM A240M-05 standard "Standard Specification of Chromium and Chromium Nickel Stainless Steel Plate, Sheet and Strip Steel for Pressure Vessels and General Purposes"; flux is BNi brazing filler metal; and solder resist is a mixture of magnesium oxide and aluminum oxide. The process comprises steel blank assembly, heating, rough rolling, finish rolling and heat treatment. The clad steel plate has excellent toughness performance and hydrogen induced cracking resistance, so that the use safety of crude oil conveying pipes is improved.

This invention relates to solar panels with improved encapsulants and back sheets for greater power output and/or increased efficiency by using materials with higher thermal conductivity than conventional solar panels. According to certain embodiments the improved materials include fillers while maintaining sufficient dielectric properties. According to certain other embodiments, the invention includes a solar panel with the improved encapsulant between solar cells and the improved back sheet. The invention also includes a method of making a solar panel including the improved materials. The invention also includes solar modules and methods related to encapsulants and the back sheets including filler materials with an enhanced particle size distribution, a brightening agent, or an infrared extinguisher.

The invention discloses a GaN-based flip-chip light-emitting diode with double reflecting layers and a preparation method thereof, which adopts a dual-reflection structure with the combination of a distributed Bragg reflecting layer and a metal reflecting layer, fully plays the excellent reflectivity of the reflecting layers and greatly improves the luminous efficiency of the light-emitting diode; and an open structure is produced in the distributed Bragg reflecting layer for filling the metal reflecting layer, thereby forming the electric conduction function and avoiding the occurrence of phenomenon that the reflectivity of the metal reflecting layer is reduced due to mutual diffusion of the metal reflecting layer in the traditional flip-chip light-emitting diode and other metal electrodes.

A hot wire welding process. An induction coil is used to preheat the filler metal wire prior to its entering the welding puddle/arc region. An induction coil is placed in close proximity to the welding arc. The filler wire is guided and supported by a delivery guide so that the filler wire passes through the center of, and is insulated from, the induction coil. The induction coil induces a current flow in the filler wire. The current produces heat as a result of the electrical resistivity of the filler wire. The heat produced raises the temperature of the filler wire just before it is fed into the weld arc region, thus reducing the energy required from the welding arc to melt the filler metal wire into the weld puddle.

The invention discloses an electromagnetic current coupling field assisted hybrid melting-brazing method for a laser-TIG arc and equipment. In addition to the use of the welding zone, an alternating magnetic field is added to control properties of plasma formed through ionization of laser, arc and a raw material metal, thereby improving the laser utilization rate. Under the electric field assisted comprehensive effect, the weld melting depth is increased, and the assistant effect on the melting bath of the liquid-state brazing filler metal for laser-arc melting-brazing is realized through electromagnetic stirring and excitation and enhancement, thereby promoting the orderly flow of the liquid-state brazing filler metal and the rupture, wetting, spreading and proliferation of the liquid-state brazing filler metal on the surface of the high metal material, improving the full mixing of the liquid-state brazing filler metal and the base metal formed by melting the low-melting-point metal material, improving the uniformity of the components of the brazed weld, stabilizing the welding process, reducing welding defects, increasing the welding speed, improving the weld formation, optimizing the structure and performance of the brazed weld, and improving the quality of the brazed joint. Moreover, the equipment has the advantages of simple structure, flexible application, low cost, good effect and easy realization.