4093 results about "Filler metal" patented technology

A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.

The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts.The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.

A friction stir welding tool includes a body having an upper surface defining an entrance opening and a lower surface, and a pin having a lower surface defining an exit opening, wherein the pin extends from the lower surface of the body. The friction stir welding tool further includes a passageway defined by the body and the pin from the entrance opening to the exit opening and is capable of allowing a filler material to pass therethrough. A friction stir welding method includes applying a frictional heating source to a workpiece to plasticize a volume of the workpiece and applying the frictional heating source to a filler material to plasticize the filler material. The method further includes introducing the filler material into the volume of the workpiece and incorporating the filler material into the volume of the workpiece.

The object is to raise the yield by greatly eliminating the disposed amounts of the tube ends, prevent wrinkles due to closing the mold while applying internal pressure, cutting the plurality of steps of hydroforming and pre-processing of the tube ends, cutting the mold costs by simplifying the mold mechanism, and obtaining a hydroformed product formed with a flange along its entire length.For this reason, the present invention provides a hydroforming method which places a metal tube to a lower mold in the state with the tube ends sticking out from it and injects a pressurizing fluid into the metal tube through the inside of a seal punch and gradually presses seal punches against tube ends of the metal tube to apply a predetermined pressing force and fill the inside of the metal tube with the pressurizing fluid to apply a predetermined internal pressure, next, in the state with the internal pressure and pressing force applied, lowers the upper mold and closes the mold so as to deform the tube and end the processing in the state with the tube ends sticking out from the mold, and, further, boosting the internal pressure in the metal tube after closing the mold and ending the forming operation and a hydroformed product processed using these methods and having a flange across the entire length in the longitudinal direction.

An airfoil (30) having a continuous layer of ceramic matrix composite (CMC) material (34) extending from a suction side (33) to a pressure side (35) around a trailing edge portion (31). The CMC material includes an inner wrap (36) extending around an inner trailing edge portion (38) and an outer wrap (40) extending around an outer trailing edge portion (42). A filler material (44) is disposed between the inner and outer wraps to substantially eliminate voids in the trailing edge portion. The filler material may be pre-processed to an intermediate stage and used as a mandrel for forming the outer trailing edge portion, and then co-processed with the inner and outer wraps to a final form. The filler material may be pre-processed to include a desired mechanical feature such as a cooling passage (22) or a protrusion (48). The filler material may include an upper layer (77) and a lower layer (78) separated by an intermediate layer (76) that extends to between the inner wrap and the outer wrap along the suction and / or pressure sides.

A multilevel interconnect structure is formed which uses air as a dielectric between wiring lines and which is compatible with the presence of unlanded vias in the interconnect structure. A layer of carbon is deposited over an insulating surface and then a pattern for trenches is formed in the surface of the layer of carbon. Metal is deposited in the trenches and over the layer of carbon and then a chemical mechanical polishing process is used to define wiring lines. An ashing or etch back process is performed on the carbon layer to recess its surface below the surfaces of the wiring lines. An oxide capping layer is provided over the recessed surface of the carbon and the wiring lines, for example using HSQ and curing, and then the carbon layer is consumed through the capping layer using an oxidation process. Air replaces the sacrificial carbon layer during the consumption reaction. Next, a silicon nitride etch stop layer is provided over the surface of the capping layer and then an intermetal dielectric layer is provided. A via is formed by etching through the intermetal dielectric, stopping on the etch stop layer, and then etching through the etch stop layer and the capping layer in distinct processes. The via is filled with a metal plug and then second level wiring lines are formed.