Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

3507 results about "Electric resistivity" patented technology

Electrical resistivity is a measure of a material’s property to oppose the flow of electric current. This is expressed in Ohm-meters (Ω⋅m).

Electrosurgical working end for controlled energy delivery

An electrosurgical working end for instant and automatic modulation of active Rf density in a targeted tissue volume. The working end of the probe of the present invention defines a tissue-engagement plane that is adapted to contact the targeted tissue. The cross-section energy delivery apparatus comprises (i) a conductive surface engagement plane for tissue contact, (ii) a substrate comprising a medial conductive matrix of a temperature sensitive resistive material; and (iii) an inner or core conductive material (electrode) that is coupled to an Rf source and controller. Of particular interest, the medial conductive matrix comprises a positive temperature coefficient (PTC) that exhibits very large increases in resistivity as it increases beyond a selected temperature, which is described as a switching range. The PTC material is selected and fabricated to define a switching range that approximates a particular thermally-mediated therapy. In a method of use, it can be understood that the engagement plane will apply active Rf energy to the engaged the tissue temperature elevates the medial PTC conductive layer to its switching range. Thereafter, Rf current flow from the core conductive to the engagement surface will be instantly modulated to maintain tissue temperature at the switching range. Moreover, the conductive matrix effectively functions as a resistive electrode to thereafter passively conduct thermal energy to the engaged tissue above its switching range. Thus, the working end can modulate the energy application to tissue between active Rf heating and passive conductive heating of the targeted tissue to maintain a targeted temperature level.
Owner:SURGRX

Graphene composite material and preparation method thereof

The invention relates to a graphene composite material and a preparation method thereof. The graphene composite material provided by the invention is characterized in that a graphene material plate fixed on a metallic matrix serves as a carrier, and the elementary substance and/or a compound are compounded on the graphene surface. Meanwhile, the invention also discloses a method for preparing the graphene composite material. The graphene composite material prepared by the invention is opened between graphene sheets and is compounded with a chemical substance under the condition that a space body structure is formed, and the obtained material has high conductivity, high specific surface area and excellent performance of low electrical resistivity between the sheets, and can be widely applied to the fields of energy storage materials such as lithium ion batteries, super-capacitors, super lead carbon batteries, super nickel-carbon electrodes, solar energy and fuel cells, the field of heat dissipation materials, the field of environment-friendly adsorbing materials, the field of sea water desalination materials, the field of photoelectric sensor materials, the biological relevance field, the field of catalyst materials and the fields of conductive ink and coating materials.
Owner:YANCHENG TEACHERS UNIV

Method and apparatus for sensing and characterizing particles

Apparatus for sensing and characterizing particles (e.g., blood cells or ceramic powders) suspended in a liquid medium comprises a conduit through which the particle suspension is caused to pass simultaneously with an electrical current. According to the invention, the interior wall of the conduit effectively varies in resistivity along the length of the conduit to define a delimited central region of high electrical resistivity which is smoothly contiguous on its opposing boundaries to uninsulated distal elements of lesser electrical resistivity. The delimited central region of the conduit functions as a Coulter volumeter conduit. The uninsulated distal elements of the conduit are made to have a dimension along the conduit wall which is at least equal to the axial extent of the effective ambit electric fields of a traditional Coulter volumeter conduit having a cross-sectional geometry identical to that of the delimited central region of high resistivity in the improved volumeter conduit. According to a preferred embodiment of the invention, the delimited central region of the improved volumeter conduit is defined by a traditional Coulter conduit wafer, i.e., a dielectric wafer containing a central circular conduit, and the distal elements of lesser resistivity are defined by uninsulated, electrically conductive, circular collars attached to opposite sides of the conduit wafer. The conduit in the conduit wafer and the openings in the conductive collars collectively form a hydrodynamically smooth volumeter conduit, in which the electric and hydrodynamic fields of the traditional volumeter conduit are advantageously amended in the manner above noted.
Owner:COULTER INTERNATIONAL CORPORATION

Process For Manufacturing A Gallium Rich Gallium Nitride Film

A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480° C. to about 900° C. and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10−4 Torr, wherein the ratio of gallium atoms to nitrogen atoms in the gallium rich gallium nitride film is from 1.01 to 1.20. The invention also provides the option of annealing the gallium rich gallium nitride film at a temperature of from about 20° C. to about 650° C. and for a time sufficient to decrease the resistivity of the film so that it becomes electrically conductive, for instance to a resistivity below 100 ohm.cm.
Owner:BUTCHER KENNETH SCOTT ALEXANDER +2
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products