1994 results about "Electric resistivity" patented technology

The invention relates to the technical field of fault diagnosis of power electronic equipment, and particularly discloses a fault analysis and diagnosis method and system for a mining high-voltage frequency converter, and the method comprises the steps: collecting the skin effect depth and parasitic parameter drift distance in real time under a high-frequency working condition through a multi-physics field sensor array; constructing three-dimensional current density distribution of the conductor based on a non-Euclidean space mesh generation technology, and dynamically correcting the equivalent resistivity of the conductor in combination with a metamaterial database to calculate a dynamic eddy current loss characteristic value; optimizing and solving the parasitic parameter time-varying evolution equation by using a quantum annealing algorithm to obtain a voltage peak sensitivity characteristic value; inputting the characteristic value into a pre-trained deep residual shrinkage network diagnosis model for multi-modal fusion analysis, and outputting a fault risk assessment result; according to the method, the problem of parasitic parameter time-varying characteristic modeling in the vibration environment is innovatively solved, and early warning of hidden faults is achieved.

The invention discloses a method for improving the heat dissipation performance of an AlGaInP red light Micro LED chip. The method comprises the following steps: S1, preparing an epitaxial structure: processing a substrate and a buffer layer, growing an etching barrier layer and an ohmic contact layer, and carrying out stacking epitaxy on a functional layer; s2, patterning the silicon-based substrate: preparing a dielectric layer and a metal structure; s3, diamond ohmic contact layer integration: processing a p-type conductive diamond film layer, and carrying out metal reflection and bonding; s4, removing the substrate and forming an n-type structure: stripping the substrate to be in n-type contact; s5, back-end process integration: preparing an electrode and an optical structure; according to the invention, the heat dissipation performance of the chip is significantly improved; the series resistance is reduced by 30%-50%; the resistivity of the p / n type diamond ohmic contact layer is reduced by 1-2 orders of magnitude compared with ITO; gaAs material light absorption and metal shading are avoided, and the red light transmittance is improved from 75% to more than 90% by combining with the micro lens array; the method is compatible with existing MOCVD, CVD and photoetching processes, large-scale production of wafers of 2-12 inches can be achieved, and the manufacturing cost is reduced.

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention discloses a high-conductivity palladium alloy for a chip test probe and a preparation method of the high-conductivity palladium alloy, and the palladium alloy comprises the following components in percentage by mass: 50-58% of Pd, 35-40% of Cu, 5-10% of Ag, 0.05-1.0% of Cr and 0.1-1.5% of auxiliary elements, the auxiliary element is selected from at least one of Al, Zn, In and Si; the resistivity of the palladium alloy is 8.0 mu omega.cm or below, the Vickers hardness is 450 HV or above, the 90-degree bending frequency is 8 or above, the tensile strength is 1500 MPa or above, and the ductility is 6% or above, the palladium alloy is subjected to pre-smelting and secondary smelting, and at least part of Cu and at least part of Cr in raw materials are mixed and pre-smelted to obtain a copper-chromium intermediate alloy; and the copper-chromium intermediate alloy and the remaining raw materials are mixed and then subjected to secondary smelting. The palladium alloy can meet the urgent requirements of probes in various forms on low resistance, high plasticity and toughness, fatigue resistance, mechanical strength and the like at the same time.

The invention relates to the technical field of high-voltage PCB design, and particularly provides a large-model-based high-voltage PCB current path optimization design method and system, and the method comprises the steps: S2, obtaining current distribution according to electrical parameters and layout information through employing an electrical simulation model; s3, acquiring temperature field distribution according to the current distribution, the resistivity of the via hole array and the heat conductivity coefficient of the PCB substrate; s4, acquiring first thermal mechanical stress distribution according to the temperature field distribution, the thermal expansion coefficients of the via hole array and the PCB substrate and the elastic modulus of the via hole array and the PCB substrate; s5, analyzing whether the first thermal mechanical stress distribution meets a preset requirement or not, if yes, taking new layout information as final layout information, and if not, adjusting layout parameters of the via hole array according to the first thermal mechanical stress distribution, and returning to the step S2; according to the method, the problems of local hot spots and thermal mechanical stress caused by uneven current distribution in the high-voltage PCB via hole array can be solved.

The invention discloses a state evaluation and fault early warning method and system based on superconducting current limiter modeling, an electromagnetic heat multi-physical field coupling model of a superconducting current limiter is constructed based on finite element software, and the method comprises the following steps: constructing a three-dimensional geometric structure of a solenoid-shaped superconducting current limiter, and setting a peripheral electromagnetic environment boundary; establishing an electromagnetic field control equation based on a Maxwell equation set and the nonlinear resistivity characteristic of the superconducting material, and coupling a solid heat transfer control equation to form a multi-physical field interaction model; optimizing grid division to balance calculation precision and solving efficiency; body parameters of the superconducting current limiter including the initial critical current Ic0 and the critical temperature Tc and working condition parameters including the environment temperature and the transmission current It are input, the parameters are dynamically adjusted according to the actual operation scene, and the voltage U at the two ends during normal operation is calculated through a model; by collecting voltage measured values Up at the two ends of the superconducting current limiter during actual operation in real time, whether the voltage measured values Up exceed a threshold value set according to the voltage U or not is judged, and an early warning mechanism is triggered.

The invention relates to an AC-DC integrated grounding fault positioning method and system, and the method comprises the steps: collecting the potential change data of a DC power supply system and the frequency characteristic data of an AC power supply system, and determining the electrical signal characteristics of stray current corrosion; decomposing the electric signal by using wavelet transform, and extracting direct-current and alternating-current components; determining a fault type according to the component amplitude; analyzing the potential gradient and the stray current flow direction in combination with a line topological structure, and determining the position of a fault point; measuring resistance to determine a grounding loop, and analyzing the correlation between corrosion distribution and electrical parameter characteristics; evaluating the influence of corrosion on the grounding path in combination with the material resistivity; according to the method, faults can be accurately recognized, fault points can be accurately positioned, the corrosion degree and the influence of the corrosion degree on the system can be evaluated, and effective support is provided for safe operation and maintenance of a subway power supply system.

The invention discloses composite conductive powder for preparing conductive silver paste and the conductive silver paste, and particularly relates to the technical field of electronic materials.The composite conductive powder is of a double-shell core-shell structure composed of a silver metal inner core, a silicon dioxide middle coating layer and a silver nanoparticle self-assembled outer layer and is subjected to ultraviolet irradiation treatment; the conductive silver paste is based on the composite conductive powder and is matched with cerium oxide modified glass powder, graphene nanosheets, thermoplastic polyurethane resin and a dibasic acid ester solvent to form a low-temperature environment-friendly formula. The volume resistivity of the conductive silver paste is as low as 1.2 * 10 <-6 > omega.cm, the curing temperature is reduced to 120 DEG C, the content of volatile organic compounds meets the environmental protection standard, meanwhile, the tensile strength is improved by 50%, the conductive silver paste can bear 500 times of bending circulation without breakage, the adhesive force reaches the level 0 of a cross-cut method, the strict requirement of a high-performance electronic device for the conductive silver paste is effectively met, and the conductive silver paste has wide application prospects.

An electrophotographic member, comprising: a support member having a conductive outer surface; and a conductive layer disposed on an outer surface of the support member, wherein the conductive layer comprises a matrix comprising a first rubber, and a plurality of domains dispersed in the matrix, volume resistivity of the matrix is 1.00×1012 Ω·cm or less, the plurality of domains comprise at least one domain A, and the domain A satisfies specific conditions, in a case where impedance of the electrophotographic member is measured by applying specific AC voltage while changing frequency in a range of 1.0×10−2 to 1.0×107 Hz and the specific plotting is done, a slope at a specific frequency is −0.80 to −0.30, and the impedance in a specific frequency is 1.00×103 to 1.00×107Ω.

The invention relates to the technical field of logging while drilling, and particularly provides a logging while drilling electromagnetic wave resistivity logging inversion method. The method comprises the following steps: constructing an XGBoost feature screening module, and optimizing a data set through the XGBoost feature screening module to obtain an optimized data set; according to the method, a BiLSTM-Transformer model is constructed, an optimized data set is input into the model, an inversion result is obtained, the inversion precision and the calculation efficiency are improved, and inversion of the target stratum resistivity, the adjacent layer surrounding rock resistivity and the boundary distance under the anisotropic stratum model is achieved.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The invention discloses a method and a system for constructing a multi-level geologic structure model based on electromagnetic detection, and the method comprises the steps: transmitting electromagnetic signals with different frequencies at all measurement points through an electromagnetic detector, carrying out the resistivity inversion through apparent resistance and impedance phase, obtaining a geologic electrical structure, dividing non-uniform and uniform electrical geology based on electromagnetic static displacement, and obtaining a multi-level geologic structure model. Analyzing an orthogonal component magnetic field to obtain an electromagnetic response parameter and a polarization ellipse parameter; determining an electric field diffusion curve; obtaining an electric field distribution model through finite difference method inversion; deducing underground geological spatial form and distribution law; and finally, calculating an electromagnetic response curved surface to obtain a two-dimensional profile curve, and performing three-dimensional reconstruction to obtain a multi-level geologic structure model. The method not only can improve the precision and reliability of the structure model, but also has good interpretability, and can be directly applied to a construction system of a multilevel geological structure model based on electromagnetic detection.

The invention provides an electronic wire harness voltage-withstanding performance optimization method, which comprises the following steps: establishing a complete electronic wire harness structure model by analyzing the resistivity and thermal expansion characteristics of a conductor material and combining the performance parameters of an insulating layer, a shielding layer and an outer sheath, and calculating the voltage-withstanding performance of the electronic wire harness by utilizing the technologies of finite element analysis, Monte Carlo simulation and the like. All the components are subjected to collaborative optimization, and accurate control over electric field stress distribution is achieved. Through iterative calculation and parameter adjustment, the overall voltage-withstanding performance of the wire harness can be accurately predicted under the multivariable coupling condition, and a mathematical model of a parameterized voltage-withstanding performance system is generated. The method not only improves the reliability of the electronic wire harness in an extreme environment, but also realizes the real-time evaluation of the voltage withstanding performance, and provides important technical support for the design and application of the electronic wire harness.

The invention discloses multi-solvent synergistically activated low-temperature semi-sintered copper paste and a preparation method and application thereof, and belongs to the technical field of conductive paste. The multi-solvent synergistically activated low-temperature semi-sintered copper slurry comprises the following raw material components in percentage by mass: 82-88% of conductive filler, 2-3% of a resin carrier, 4-7% of an activating solvent, 4-7% of a dispersing solvent and 2-3% of a curing agent. Through cooperation of multiple solvents, full-stage activation of the copper particles is achieved, pre-connection and sintering of the copper particles before resin is completely crosslinked and cured are promoted, densification of the overall structure is improved, the insulation barrier effect of the resin is effectively avoided, the resistivity is reduced, meanwhile, inhibition of the resin on sintering of the copper particles is solved, and the service life of the copper particles is prolonged. And good balance between conductivity and interface adhesion is realized. Through resin curing, chemical bonding between the slurry and the substrate can be enhanced, a metal bond network among copper particles is expanded, and mechanical connection stability and electrical performance are guaranteed.

The invention relates to the technical field of lead-acid batteries, and particularly discloses a graphene-based composite material as well as a preparation method and application thereof. The graphene-based composite material comprises a graphene-CNTs three-dimensional composite skeleton, and tin dioxide and titanium dioxide which are loaded on the graphene-CNTs three-dimensional composite skeleton. In the material provided by the invention, the graphene-CNTs three-dimensional composite skeleton has excellent conductivity and mechanical strength, so that the resistivity of a negative plate is remarkably reduced, structural support is provided, and the binding force of lead powder and a negative electrode metal plate grid is enhanced, thereby reducing the falling of active substances and improving the cycling stability of the battery; meanwhile, tin dioxide and titanium dioxide are introduced into the graphene-based composite material and form a multi-stage synergistic system with the graphene-CNTs three-dimensional composite framework, so that the problems that the negative electrode of the lead-acid battery is easy to separate hydrogen, the conductivity is insufficient and active substances fall off can be effectively solved, and the cycle performance of the battery is remarkably improved.

The invention discloses a conductive paste, a metallized substrate and a metallization process for manufacturing the metallized substrate, the conductive paste comprises metal particles, the particle size of the metal particles is 0.1-10 [mu] m, and the mass ratio of the metal particles is 80-98%; in the metallization process, a copper layer is arranged on the hole wall of a through hole or a blind hole of a substrate, then conductive slurry is filled in the hole with the copper layer, heating sintering treatment is carried out, and after heating sintering is carried out in an inert gas atmosphere at the temperature of less than or equal to 300 DEG C, metal particles can be fused to form a connection structure or a eutectic structure. A reinforcing layer can be formed between the nano metal particles and the copper layer, and the reinforcing layer is a metal bonding layer or an intermetallic compound layer. The metallization mode is suitable for a through hole or a blind hole of a glass / silicon / ceramic substrate with a high aspect ratio and a micro aperture, and the technical problems that complete filling is difficult to achieve and filling defects exist in an existing electroplating process, the electrical resistivity of conductive paste is high, and the interface bonding force is insufficient can be solved.

The invention discloses a laser welding method for a copper-aluminum composite material, which comprises the following steps of: performing upsetting thinning treatment on a three-layer sandwich structure base material to ensure that the total thickness of a welding area is 1.5 mm, the thickness of an aluminum layer is 0.9-1.1 mm (the deformation rate is 10-30%), the thickness of a copper layer is 0.2-0.3 mm, the surface roughness Ra is less than or equal to 1.6 mu m, and the surface roughness Ra of an oxide layer is less than or equal to 5 mu m; a 1064nm optical fiber laser is adopted, welding is conducted at the power of 85%-95%, the speed of 120-150 mm / s and the frequency of 4000-6000 Hz, the fusion depth is 0.3-0.6 mm, and the fusion width is 1.2-2.0 mm. By means of the method, the tensile strength of the connector can be larger than or equal to 110 MPa, the resistivity is smaller than or equal to 2.5 * 10 <-8 > omega.m, the problems that traditional welding strength is low and conductivity is poor are solved, batch quality consistency is ensured, and the method is suitable for the fields of new energy automobiles and the like.

The invention belongs to the technical field of semiconductor device performance testing, and particularly relates to a VCSEL epitaxial wafer resistivity distribution measuring method and system, and the method comprises the steps: constructing a three-dimensional discretization model representing an epitaxial wafer and an unknown parameter vector containing the vertical resistivity, the top transverse resistivity and the substrate leakage junction nonlinear resistance; a physical response function is defined, the vector is iterated through a discrete point fitting algorithm, so that the total residual error between the analog voltage difference output by the function and the actually measured voltage value under the cross-order-of-magnitude current is minimum, and the real vertical resistivity is extracted from the optimal parameter vector; and obtaining the vertical resistivity of each point on the two-dimensional test point grid so as to generate a distribution diagram and carry out anomaly detection. According to the invention, the problem of measurement distortion caused by the leakage defect of the substrate is solved, and the measurement accuracy of the vertical resistivity is improved.

A preparation method of a broadband low-loss high-Bs power manganese zinc ferrite material relates to an electronic material technology, and comprises the following steps: step 1, taking Fe2O3, ZnO and MnO as raw materials, and batching; step 2, performing primary ball milling on the ingredients obtained in the step 1, and then drying and sieving to obtain a primary ball-milled material; step 3, pre-sintering; step 4, by taking the mass of the pre-sintered material obtained in the step 3 as a standard, adding 0.02 to 0.04 weight percent of V2O5, 0.02 to 0.04 weight percent of Nb2O5, 0.02 to 0.04 weight percent of ZrO2, 0.04 to 0.07 weight percent of TiO2 and 0.01 to 0.03 weight percent of YIG, so as to obtain doped mixed powder; step 5, secondary ball milling; step 6, granulating; step 7, pressing the granulated material into a green body part; and step 8, sintering the green body by stages. According to the invention, the initial permeability is improved while the resistivity of the power manganese-zinc ferrite is improved.

The invention discloses a natural electric field-electric field joint detection and inversion method based on GMM prior, and relates to the technical field of tunnel engineering geological detection, and the method comprises the steps: obtaining the resistivity and natural potential observed in a to-be-inverted region; an equivalent body source of a natural potential is parameterized into a body source vector on a grid unit, weighted L1 sparse regular constraint is introduced into the body source vector, a GMM prior model is used as underground electrical structure prior shared across physics fields, and a multi-task joint inversion objective function of a shared underground electrical structure label is established; and performing inversion iteration by adopting maximum posteriori, updating parameters of the GMM prior model and the underground electrical structure label by adopting an expectation maximization algorithm until an end condition is met, and obtaining a joint inversion imaging result of the tunnel water-rich anomalous body. The advantages of a multi-source electrical method are fused, underground electrical structure priori is introduced, Bayesian uncertainty analysis is combined, and high-resolution and high-reliability recognition of the water-rich anomalous body in front of the tunnel is achieved.

The invention discloses an inflation method for regulating and controlling the growth rate of silicon carbide crystals and a related device, and relates to the technical field of semiconductors, and the inflation method comprises the following steps: obtaining the mass loss rate of a silicon carbide crystal growth system based on a weighing sensor; the quality loss rate is compared with a theoretical loss rate, a deviation rate is obtained, and the theoretical loss rate is the quality loss rate meeting the production requirement under the current technology; acquiring a growth stage parameter, judging whether the growth stage parameter reaches a preset value or not, if the growth stage parameter reaches the preset value, adopting a first control strategy, and if the growth stage parameter does not reach the preset value, adopting a second control strategy, the growth stage parameters comprise the silicon carbide crystal thickness corresponding to the preset crystal growth time. According to the method, the uniformity of the resistivity of the silicon carbide crystal is improved by regulating and controlling the doping gas proportion in the growth process of the silicon carbide crystal.

The invention provides an intelligent dust remover control method and system based on electrostatic adsorption. The method comprises the following steps: acquiring dust concentration, temperature and humidity and particulate matter impedance spectrum data of a working environment, screening key measurement points, applying an alternating electric field to obtain an impedance phase difference map, performing frequency spectrum consistency verification on the impedance phase difference map and the impedance spectrum data after temperature and humidity compensation, and calculating conductivity discrimination parameters of dust with different particle sizes; deploying a parallel metal plate adsorption array containing an insulating dielectric layer, and adjusting the plate spacing to change the electric field intensity; generating a resistivity space distribution thermodynamic diagram based on the conductivity discrimination parameters, and cooperating with drive board spacing adjustment and voltage output according to the resistance gradient change of the insulation and conductive dust gathering area and the migration path; and a measurement point location screening strategy is updated in combination with the spacing adjustment amplitude and the voltage change rate, and the impedance spectrum precision is optimized. Precise identification of insulation and conductivity multi-mode dust and dynamic electric field self-adaptive adsorption are achieved, the dust removal efficiency of a complex environment is improved, and energy consumption is reduced.

The invention belongs to the technical field of metal material surface modification, and particularly relates to a magnesium alloy surface conductive corrosion-resistant coating and a preparation method, the conductive corrosion-resistant coating comprises a three-layer structure, the total coating thickness is 33-50 microns, the bottom coating is a low-porosity MAO coating prepared through a micro-arc oxidation method, and the thickness is 20-35 microns; the middle coating is a conductive nano-particle layer prepared by adopting a negative pressure mode; and the top coating is a zinc aluminum oxide conductive layer prepared by adopting a vapor-phase hydrothermal deposition method, and the thickness of the top coating is 13-15 microns. In addition, the invention provides the modified magnesium alloy with the conductive corrosion-resistant coating prepared on the surface, the self-corrosion current density of the modified magnesium alloy is 0.18-1.8 * 10 <-7 > A / cm < 2 >, and the volume resistivity of the modified magnesium alloy is 1.30-5.21 * 10 < 4 > omega.m.

The invention discloses a method for growing a low-surface-defect epitaxial wafer on a heavily-doped silicon substrate and the epitaxial wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: carrying out rapid heat treatment on a heavily doped silicon substrate of which the resistivity is not greater than 1.15 m omega.cm in an inert atmosphere at the treatment temperature of 1000-1500 DEG C and the heating / cooling rate of 10-120 DEG C / s, and keeping the high temperature for 30-120 seconds; then HCl gas phase polishing is carried out at the temperature of 650-1250 DEG C, and mixed gas of HCl and hydrogen is introduced to remove a surface silicon layer by 50-150 nm; and finally growing an epitaxial layer. And the substrate can be subjected to particle detection and screening, and only the substrate with the specific pattern defect is subjected to the treatment. According to the method, through the synergistic effect of RTP and HCl polishing, in-vivo defect repairing and surface finishing are achieved, the number of LPDs, larger than or equal to 55 nm, on the surface of the epitaxial wafer is stably reduced to 10 or below, and the quality of the epitaxial wafer is remarkably improved.

The invention discloses a low-melting-point glass-based inorganic anticorrosive coating with excellent conductivity and a preparation method of the low-melting-point glass-based inorganic anticorrosive coating. The inorganic anticorrosive conductive coating material comprises 80-99.5 parts of a glass base material and 0.5-20 parts of conductive phase powder dispersed in the glass base material, wherein the conductive phase powder adopts a conductive oxide; the preparation process comprises the following steps: 1) mixing glass base materials; 2) melting into molten glass; 3) crushing and introducing a conductive phase; 4) sintering into blocks; 5) crushing and screening the sample; (6) preparing slurry; (7) paint spraying; and 8) sintering and cooling to obtain the paint. The method is simple in process, low in cost, corrosion-resistant, high-temperature-resistant and good in conductivity; after the conductive phase is added, the surface resistivity of the coating is reduced to 102-109 ohms, and the minimum value of the surface resistivity is far higher than that of an existing system.

The invention discloses a high-performance plated tungsten filament and a preparation method thereof, and relates to the technical field of plated tungsten filament preparation, and the preparation method comprises the following steps: preparing a tungsten filament matrix by a process of first hot drawing and then cold drawing, the tungsten filament matrix is about 80 [mu] m after hot drawing, and the tungsten filament matrix is cold-drawn to 10-40 [mu] ml and contains 98.5-100% of tungsten element, 0-1.5% of rare earth element, 1-5 [mu] m of grain size and 10 < 12 >-10 < 14 > m <-2 > of dislocation density; a transition layer, a middle strengthening layer and a functional alloy layer are arranged on the surface of the finished wire from inside to outside, the diameter of the finished wire is 0.01-0.5 mm, the tensile strength is 5000-7000 MPa, the number of torsion turns is larger than 800, and the resistivity is 0.05-0.08 mu omega.m. The composite material is excellent in comprehensive performance, high in tensile strength, large in torsion, good in resistivity, high in size precision, good in surface quality, resistant to oxidation, high in wear resistance, long in service life, controllable in preparation, beneficial to mass production and capable of adjusting the performance according to needs.

The present application belongs to the technical field of batteries. Disclosed are a dry-method electrode film and a preparation method therefor, an electrode and a battery. The method of the present application comprises: mixing polytetrafluoroethylene, an active substance and an electrically conductive agent, and crushing same, so as to obtain a crushed mixture; subjecting the crushed mixture to primary airflow grinding and shearing, so as obtain a ground and sheared mixture, wherein conditions of the primary shearing comprise: the airflow temperature is -10 to 10°C, the airflow pressure is 0.7-0.9 MPa, and the rotation speed is 8000-12000 rpm; subjecting the ground and sheared mixture to secondary airflow grinding, shearing and fibration, so as to obtain a fibration material; and subjecting the fibration material to a secondary fibration treatment, so as to obtain a dry-method electrode film. The method of the present application can significantly improve the tensile strength of an electrode film, improve the liquid absorption rate of an electrode and reduce the resistivity of the electrode.

The invention belongs to the related technical field of pipe network leakage detection, and provides a comprehensive detection method and system for leakage of an underground sewage pipe network in an industrial park in order to solve the problems that existing pipe network leakage detection is inaccurate, large-area detection is difficult and the like. Performing inversion on the acquired data by adopting prior constraint, and judging a detection section of suspected leakage abnormity according to a resistivity profile; further detecting the detection section with the suspected leakage abnormity by using a high-density resistivity method and an induced polarization method, refining a grid based on an electromagnetic method result and prior information, introducing directional smooth constraint and minimum gradient support to perform inversion constraint on acquired data, and positioning a leakage area; sampling to judge the authenticity of the leakage of the detected area, and peeping, measuring and positioning the leakage area through the pipeline robot; and rapid identification and delineation of the pipe network leakage risk area of the industrial park are realized through cooperation of multiple methods.

The invention provides a tank-type circuit breaker AC / DC voltage withstand test electric field improvement method and device and a storage medium, and the device comprises an epoxy resin composite insulator embedded with an aluminum alloy spherical shell, and the spherical shell achieves the equipotential connection with the wire outlet end of a circuit breaker sleeve through conical surface cooperation. And the curvature radius is optimally designed to transfer an electric field peak value to an equatorial region. The spherical shell is coated with a semi-conductive silicone rubber layer with resistivity distributed in a gradient manner, and the outer insulator forms a multi-stage umbrella skirt structure. During installation, dimensional tolerance self-adaptive compensation is achieved through a cam locking mechanism of the floating flange, and the belleville spring set provides axial sealing pre-tightening force. The method comprises four core processes of composite structure coaxial installation, gradient electric field regulation and control, dynamic sealing locking and electric heating state verification. According to the scheme, an electrode structure is reconstructed to suppress point discharge, space charge accumulation is blocked through dielectric layer resistivity gradient distribution, the creepage distance along the surface is prolonged through the multi-stage umbrella skirts, and the technical defect that the safety distance is shortened by a traditional grading ring is overcome.

To provide a water electrolysis evaluation device controlling a liquid level in a gas-liquid separation tank steady, while controlling the electric characteristics of an electrolytic solution.SOLUTION: There is provided a water electrolysis evaluation device comprising a gas-liquid separation tank connected to a test piece via an introduction line and separating a fluid led out of the test piece into oxygen gas or hydrogen gas and an electrolytic solution, an electric characteristics measurement unit for measuring electric characteristics indicating the conductivity or specific resistance of the electrolytic solution included in the fluid, a discharge line provided with a drainage amount adjustment device for discharging the electrolytic solution from the gas-liquid separation tank and adjusting a drainage amount of the electrolytic solution, a supply line provided with a supply amount adjustment device for supplying the gas-liquid separation tank with water of electric characteristics different from that of the electrolytic solution present in the gas-liquid separation tank and adjusting the supply amount of water, and a flow rate control unit for controlling the drainage amount adjustment device and the supply amount adjustment device based on the electric characteristics measured by the electric characteristics measurement unit.SELECTED DRAWING: Figure 1