3291 results about "Electric resistivity" patented technology

The invention discloses a composite positive electrode material and a preparation method thereof, a positive plate and a lithium ion battery. The composite positive electrode material comprises lithium iron phosphate and a carbon coating layer coating the surface of the lithium iron phosphate, wherein the integral intensity ratio ID / IG of a D peak to a G peak of the carbon coating layer in a Raman spectrum is 0.2-0.9, and the resistivity of the composite positive electrode material is 0.1-10 omega.cm. According to the preparation method, the graphitization degree of the carbon coating layer is controlled within a proper range (ID / IG is 0.2-0.9), so that good conductivity is ensured, and structural instability caused by excessive graphitization is avoided. The moderate graphitization degree is beneficial to formation of an ordered carbon layer structure, provides more electron transport channels and reduces the potential barrier of electron migration, so that the conductivity of the composite material is greatly improved, and the resistivity is reduced to an excellent level of 0.1-10 omega.cm.

The invention discloses a dry-method electrode film and a preparation method thereof, an electrode and a battery, and belongs to the technical field of batteries. The method comprises the following steps: mixing polytetrafluoroethylene, an active substance and a conductive agent, and crushing to obtain a crushed mixture; performing primary airflow grinding and shearing on the crushed mixture to obtain a ground and sheared mixture; the primary shearing conditions are as follows: the airflow temperature is-10 to 10 DEG C, the airflow pressure is 0.7 to 0.9 MPa, and the rotating speed is 8000 to 12000 rpm; carrying out secondary airflow grinding, shearing and fibration on the ground and sheared mixture to obtain a fibration material; and carrying out secondary fibration treatment on the fibration material to obtain the dry-method electrode film. The method can significantly improve the tensile strength of the electrode film, improve the liquid absorption rate of the electrode and reduce the resistivity of the electrode.

The invention relates to the technical field of fault diagnosis of power electronic equipment, and particularly discloses a fault analysis and diagnosis method and system for a mining high-voltage frequency converter, and the method comprises the steps: collecting the skin effect depth and parasitic parameter drift distance in real time under a high-frequency working condition through a multi-physics field sensor array; constructing three-dimensional current density distribution of the conductor based on a non-Euclidean space mesh generation technology, and dynamically correcting the equivalent resistivity of the conductor in combination with a metamaterial database to calculate a dynamic eddy current loss characteristic value; optimizing and solving the parasitic parameter time-varying evolution equation by using a quantum annealing algorithm to obtain a voltage peak sensitivity characteristic value; inputting the characteristic value into a pre-trained deep residual shrinkage network diagnosis model for multi-modal fusion analysis, and outputting a fault risk assessment result; according to the method, the problem of parasitic parameter time-varying characteristic modeling in the vibration environment is innovatively solved, and early warning of hidden faults is achieved.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.

A hole-tunnel induced polarization water exploration structure construction method, comprising steps: arranging a plurality of forward boreholes (2) at intervals on an outer edge area of a tunnel face; respectively providing in each forward borehole (2) an in-hole exploration cable having a power supply electrode A (5) and a power supply electrode B (6); providing in an array a plurality of out-hole exploration electrodes, which are configured as a measurement electrode M (7) and a measurement electrode N (8), outside the area occupied by the forward boreholes (2) of the tunnel face, wherein the power supply electrodes form a power supply closed loop, and the measurement electrodes form a measurement closed loop. Also provided is an inversion method for a hole-tunnel induced polarization water exploration structure, comprising steps: acquiring hole-based initial observation data, and forming exploration observation data; establishing a corresponding initial resistivity model and a corresponding initial polarizability model, and carrying out a conventional inversion electrical method to obtain a resistivity inversion model; establishing a tunnel resistivity and polarizability clustering joint inversion objective function; and performing iterative inversion to obtain a final inversion result.

The present invention provides: a copper alloy material which has a volume resistivity within a desired range, has a thermal electromotive force against copper having a small absolute value, and has a temperature coefficient of resistance of 0 or a negative number having a small absolute value over a wide temperature range from a normal temperature (for example, 20° C) to a high temperature (for example, 150° C); and a resistive material for resistors, a resistor, a material for heating elements, and a heating element, each using said copper alloy material.　This copper alloy material has an alloy composition that contains from 7.0% by mass to 17.0% by mass of Mn, from 0.1% by mass to 3.0% by mass of Ni, and from 1.0% by mass to 5.0% by mass of Al, with the balance being made up of Cu and unavoidable impurities. The resistive material for resistors and the material for heating elements are composed of this copper alloy material. The resistor comprises this resistive material for resistors. The heating element comprises this material for heating elements.

Metallization schemes involve atomic layer deposition (ALD) of molybdenum (Mo) and in some embodiments, ALD of Mo in a feature without a barrier layer. In some embodiments, deposition of the ALD Mo film may be followed by chemical vapor deposition (CVD) or physical vapor deposition (PVD) of a Mo film. In some embodiments, the CVD or PVD Mo film is part of the metallization stack. In other embodiments, the CVD or PVD Mo film is deposited as a sacrificial overburden layer. In some embodiments, deposition of the ALD Mo film may be followed by CVD or PVD of another metal such as tungsten (W). In some embodiments, the CVD or PVD W film is part of the metallization stack. In other embodiments, the CVD or PVD W film is deposited as a sacrificial overburden layer.

The invention provides a method for determining the volatilization behavior of antimony, a silicon single crystal rod, a silicon wafer and a solar cell, and the method comprises the steps: determining the volatilization behavior of antimony in a leading and releasing stage and / or an equal-diameter stage: in the leading and releasing stage, pulling out a small end from molten silicon; the total feeding amount and the initial antimony concentration are obtained; the mass, the phosphorus-antimony concentration and the phosphorus concentration of the small head are obtained; according to the total feeding amount, the phosphorus-antimony concentration, the initial antimony concentration and the phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-diameter stage, the actual resistivity of the silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the single crystal pulling process can be determined.

The invention discloses a back contact battery, a photovoltaic module and a manufacturing method of the back contact battery, relates to the technical field of back contact batteries, and aims to solve the problems of relatively large defect hidden danger and relatively high electric leakage risk between an N-type doping layer and a P-type doping layer. According to the back contact battery, a first surface of a semiconductor substrate comprises a first area, a second area and a third area located between the first area and the second area. The first doped semiconductor layer is arranged in the first region, and the second doped semiconductor layer opposite to the first doped semiconductor layer in conductive type is arranged in the second region. The resistivity of the surface layer of at least part of the surface of the semiconductor substrate in the third region is greater than 20ohm. Cm; h1 + H2 + W is greater than or equal to 4 [mu] m and less than or equal to 300 [mu] m; h1 is the height difference between the bottom surface of the third region and the surface of the first region, H2 is the height difference between the bottom surface of the third region and the surface of the second region, and W is the width of the third region.

The invention discloses a method for improving the heat dissipation performance of an AlGaInP red light Micro LED chip. The method comprises the following steps: S1, preparing an epitaxial structure: processing a substrate and a buffer layer, growing an etching barrier layer and an ohmic contact layer, and carrying out stacking epitaxy on a functional layer; s2, patterning the silicon-based substrate: preparing a dielectric layer and a metal structure; s3, diamond ohmic contact layer integration: processing a p-type conductive diamond film layer, and carrying out metal reflection and bonding; s4, removing the substrate and forming an n-type structure: stripping the substrate to be in n-type contact; s5, back-end process integration: preparing an electrode and an optical structure; according to the invention, the heat dissipation performance of the chip is significantly improved; the series resistance is reduced by 30%-50%; the resistivity of the p / n type diamond ohmic contact layer is reduced by 1-2 orders of magnitude compared with ITO; gaAs material light absorption and metal shading are avoided, and the red light transmittance is improved from 75% to more than 90% by combining with the micro lens array; the method is compatible with existing MOCVD, CVD and photoetching processes, large-scale production of wafers of 2-12 inches can be achieved, and the manufacturing cost is reduced.

The invention relates to the technical field of semiconductor material preparation, and provides a method for controlling the resistivity of a fifth main group element doped crystal bar, crystal pulling time is distinguished in different crystal pulling stages, the volatilization coefficient of doped elements in different time periods is adjusted, the volatilization amount of the doped elements in each time interval is calculated more accurately, and the resistivity of the doped crystal bar is controlled. Therefore, the amount of doping elements required for controlling the resistance can be calculated more accurately, the resistance of the crystal bar can be adjusted more effectively and more accurately, the resistance difference between the head and the tail of the single-crystal crystal bar can be better reduced, meanwhile, through timely adjustment of the control process of the grade and the ending volatilization amount, the supplementary doping condition in the crystal pulling process is defined, and the crystal pulling efficiency is improved. And the resistance hit rate of the crystal bar is improved, and the head and tail resistance difference is reduced, so that the resistivity of each part of the crystal bar is accurately controlled, and the consistency of subsequent silicon wafer product quality is ensured.

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention discloses a high-conductivity palladium alloy for a chip test probe and a preparation method of the high-conductivity palladium alloy, and the palladium alloy comprises the following components in percentage by mass: 50-58% of Pd, 35-40% of Cu, 5-10% of Ag, 0.05-1.0% of Cr and 0.1-1.5% of auxiliary elements, the auxiliary element is selected from at least one of Al, Zn, In and Si; the resistivity of the palladium alloy is 8.0 mu omega.cm or below, the Vickers hardness is 450 HV or above, the 90-degree bending frequency is 8 or above, the tensile strength is 1500 MPa or above, and the ductility is 6% or above, the palladium alloy is subjected to pre-smelting and secondary smelting, and at least part of Cu and at least part of Cr in raw materials are mixed and pre-smelted to obtain a copper-chromium intermediate alloy; and the copper-chromium intermediate alloy and the remaining raw materials are mixed and then subjected to secondary smelting. The palladium alloy can meet the urgent requirements of probes in various forms on low resistance, high plasticity and toughness, fatigue resistance, mechanical strength and the like at the same time.

The invention discloses a coal seam working face floor detection and analysis method, and relates to the technical field of detection and analysis. Potential change conditions of different positions and different elevations are observed through a parallel electrical method instrument, resistivity distribution conditions of different depths in a working face and a bottom plate of the working face can be obtained through three-dimensional electrical method inversion, and the resistivity distribution conditions provide technical support for objective and accurate geological interpretation. The hydrogeological condition of the working face floor rock stratum can be better understood, so that an important reference basis is provided for safe mining; the thermal effect and the electromagnetic effect existing in the environment are evaluated and corrected, so that the deviation of the measured conductivity value can be accurately corrected, and the accuracy and the reliability of conductivity measurement data are improved; and inputting the corrected conductivity value SR (xi, yi, zi) of each grid point into a three-dimensional model, and marking to construct a conductivity three-dimensional model, so as to visually display the electrical property distribution information of the underground medium.

The invention relates to the technical field of high-voltage PCB design, and particularly provides a large-model-based high-voltage PCB current path optimization design method and system, and the method comprises the steps: S2, obtaining current distribution according to electrical parameters and layout information through employing an electrical simulation model; s3, acquiring temperature field distribution according to the current distribution, the resistivity of the via hole array and the heat conductivity coefficient of the PCB substrate; s4, acquiring first thermal mechanical stress distribution according to the temperature field distribution, the thermal expansion coefficients of the via hole array and the PCB substrate and the elastic modulus of the via hole array and the PCB substrate; s5, analyzing whether the first thermal mechanical stress distribution meets a preset requirement or not, if yes, taking new layout information as final layout information, and if not, adjusting layout parameters of the via hole array according to the first thermal mechanical stress distribution, and returning to the step S2; according to the method, the problems of local hot spots and thermal mechanical stress caused by uneven current distribution in the high-voltage PCB via hole array can be solved.

The invention discloses a wafer resistivity detection device and method, and relates to the technical field of detection, the wafer resistivity detection device comprises a probe and a measuring instrument, the lower end of the probe is provided with four probes, an adjusting mechanism comprises an accommodating groove formed in the probe, a sleeve is rotatably connected in the accommodating groove, and the probe is arranged in the sleeve. A first connecting rod close to the probe is fixedly connected to the sleeve, a second connecting rod far away from the probe is rotationally connected to the sleeve, swing rods are hinged to the two ends of the first connecting rod and the two ends of the second connecting rod, a supporting rod is hinged to the free end of each swing rod, and the supporting rods are in sliding connection with the probe. The probes are connected with the corresponding supporting rods in a sliding mode, and the conversion mechanism is arranged in the containing groove and used for adjusting the first connecting rod and the second connecting rod to be in a parallel state or a staggered state; the method is suitable for the detection requirement that the distance between the probes needs to be changed frequently, various resistivity measurement requirements are met, and the detection convenience is improved.

The invention relates to the technical field of pretreatment of forming materials, and discloses an automatic proportioning method and device for a conductive grouting tracing material. The technical problem that in the prior art, in the grouting reinforcement process of a foundation pit, the design of the proportion of a conductive tracing material lacks an automatic means, and consequently the electrical resistivity tomography (ERT) effect is poor is solved. The method comprises the following steps: data acquisition and collection; setting parameters and formulating a construction scheme; the grouting ratio is controlled, and construction measures are determined; automatic matching generation and output; and automatic real-time feedback and correction are realized. Through the automatic matching design method, the construction efficiency and the monitoring precision of the foundation pit grouting reinforcement project are remarkably improved, and the necessity of manual intervention and the potential construction risk are reduced. A high-precision sensor and an advanced data analysis tool are combined, dynamic monitoring and intelligent feedback adjustment of the tomography effect in the whole construction process are achieved, and service is provided for engineering quality and construction safety.

According to the preparation method and application of the metal soft magnetic composite material, the surface of the metal soft magnetic powder is coated with the metal oxide insulating layer through the ALD technology, then the characteristics that the ferrite phase layer is high in resistivity, low in loss and good in high-frequency characteristic are utilized, insulating coating is conducted on the surface through the ALD technology, and the metal soft magnetic composite material is obtained. And a ferrite coating layer is formed on the surface of the metal soft magnetic powder during high-temperature annealing, so that electric contact among particles is blocked, the resistivity of the soft magnetic material is improved, and the eddy-current loss at high frequency is reduced, thereby improving the high-frequency performance.

The invention discloses a state evaluation and fault early warning method and system based on superconducting current limiter modeling, an electromagnetic heat multi-physical field coupling model of a superconducting current limiter is constructed based on finite element software, and the method comprises the following steps: constructing a three-dimensional geometric structure of a solenoid-shaped superconducting current limiter, and setting a peripheral electromagnetic environment boundary; establishing an electromagnetic field control equation based on a Maxwell equation set and the nonlinear resistivity characteristic of the superconducting material, and coupling a solid heat transfer control equation to form a multi-physical field interaction model; optimizing grid division to balance calculation precision and solving efficiency; body parameters of the superconducting current limiter including the initial critical current Ic0 and the critical temperature Tc and working condition parameters including the environment temperature and the transmission current It are input, the parameters are dynamically adjusted according to the actual operation scene, and the voltage U at the two ends during normal operation is calculated through a model; by collecting voltage measured values Up at the two ends of the superconducting current limiter during actual operation in real time, whether the voltage measured values Up exceed a threshold value set according to the voltage U or not is judged, and an early warning mechanism is triggered.

The invention relates to an AC-DC integrated grounding fault positioning method and system, and the method comprises the steps: collecting the potential change data of a DC power supply system and the frequency characteristic data of an AC power supply system, and determining the electrical signal characteristics of stray current corrosion; decomposing the electric signal by using wavelet transform, and extracting direct-current and alternating-current components; determining a fault type according to the component amplitude; analyzing the potential gradient and the stray current flow direction in combination with a line topological structure, and determining the position of a fault point; measuring resistance to determine a grounding loop, and analyzing the correlation between corrosion distribution and electrical parameter characteristics; evaluating the influence of corrosion on the grounding path in combination with the material resistivity; according to the method, faults can be accurately recognized, fault points can be accurately positioned, the corrosion degree and the influence of the corrosion degree on the system can be evaluated, and effective support is provided for safe operation and maintenance of a subway power supply system.

The invention discloses composite conductive powder for preparing conductive silver paste and the conductive silver paste, and particularly relates to the technical field of electronic materials.The composite conductive powder is of a double-shell core-shell structure composed of a silver metal inner core, a silicon dioxide middle coating layer and a silver nanoparticle self-assembled outer layer and is subjected to ultraviolet irradiation treatment; the conductive silver paste is based on the composite conductive powder and is matched with cerium oxide modified glass powder, graphene nanosheets, thermoplastic polyurethane resin and a dibasic acid ester solvent to form a low-temperature environment-friendly formula. The volume resistivity of the conductive silver paste is as low as 1.2 * 10 <-6 > omega.cm, the curing temperature is reduced to 120 DEG C, the content of volatile organic compounds meets the environmental protection standard, meanwhile, the tensile strength is improved by 50%, the conductive silver paste can bear 500 times of bending circulation without breakage, the adhesive force reaches the level 0 of a cross-cut method, the strict requirement of a high-performance electronic device for the conductive silver paste is effectively met, and the conductive silver paste has wide application prospects.

The invention belongs to the technical field of oil-gas exploration and development, and relates to a transient electromagnetic wave through casing resistivity measurement method, which comprises the following steps of: establishing a cased well stratum model by considering a borehole, a casing and a stratum and combining transient electromagnetic wave logging characteristics; in the cased well stratum model, resistivity is measured by adopting an apparent resistivity extraction method based on a late signal, or an anomaly-background method based on a middle signal, or a compensation differential coil structure; the compensation differential type coil structure comprises a transmitting coil and at least one compensation coil system, the compensation coil system at least comprises a first receiving coil and a second receiving coil which are sequentially arranged, the transmitting coil and the second receiving coil are wound in the forward direction, and the first receiving coil serves as the compensation coil and is wound in the reverse direction; and the transmitting coil and the compensating coil system are sequentially arranged from front to back. According to the method, the transient electromagnetic wave through casing logging response precision can be improved, and formation resistivity extraction under the influence of a high-conductivity casing is achieved.

The invention relates to the technical field of resistivity method geophysical prospecting detection, and discloses a soil reinforcement effect detection device and method based on electrical resistance tomography. The technical problems that in the prior art, an electrode device is difficult to cover the whole pile body, so that an imaging result has certain limitation, and the electrode device is difficult to adapt to pile bodies of different sizes and shapes are solved. The device comprises a rotary spray irrigation pile, a high-pressure slurry pump and an air compressor, the rotary spray irrigation pile comprises a pipe wall and a grouting pipe, a plurality of electrodes are arranged on the outer side of the pipe wall at intervals, an electrode line channel is arranged on the inner side of the pipe wall, and the electrodes are connected through a wire penetrating through the electrode line channel to form an electrode measurement network. The device has the advantages that the reinforcing process of the rotary spray irrigation pile is monitored in real time, and the physical characteristics of foundation soil or a reinforcing body are accurately analyzed.

The invention provides a multi-dimensional concrete diaphragm wall full-section defect detection method based on an electrical method, and the method comprises the steps: pre-burying five columns of longitudinal electrode probes and multiple layers of transverse electrode probes when a diaphragm wall body is poured, and forming a detection network; performing electrode control on the embedded electrode probe by using terminal equipment, performing defect detection according to requirements, and determining the working performance stability of the electrode probe and the control terminal; after a joint detection requirement is received, carrying out high-density resistivity method layered detection by using a transverse electrode from bottom to top, and counting a first abnormal low-resistance region existing in the whole section, and carrying out electric perspective method segmented detection by using a longitudinal electrode from left to right, and counting a second abnormal low-resistance region existing in the whole section; and superposing the first abnormal low-resistance region and the second abnormal low-resistance region, and taking the superposed region as a finally determined defect position. Based on the scheme provided by the invention, full-section defect identification and positioning of hidden engineering of the dam foundation diaphragm wall can be realized.

An electrophotographic member, comprising: a support member having a conductive outer surface; and a conductive layer disposed on an outer surface of the support member, wherein the conductive layer comprises a matrix comprising a first rubber, and a plurality of domains dispersed in the matrix, volume resistivity of the matrix is 1.00×1012 Ω·cm or less, the plurality of domains comprise at least one domain A, and the domain A satisfies specific conditions, in a case where impedance of the electrophotographic member is measured by applying specific AC voltage while changing frequency in a range of 1.0×10−2 to 1.0×107 Hz and the specific plotting is done, a slope at a specific frequency is −0.80 to −0.30, and the impedance in a specific frequency is 1.00×103 to 1.00×107Ω.

A compliant tri-axial force sensor is disclosed that may be incorporated into soft robots or electronic skin. The sensor comprises a first electrode layer including column electrodes in a first orientation; a second electrode layer including column electrodes in a second orientation that is orthogonal to the first orientation; a force-dependent active layer provided between the first electrode layer and the second electrode layer configured to change at least one property—such as quantum tunneling, conductivity, resistivity, or electrical charge—when subjected to a force; at least one three dimensional bump arranged to transmit externally applied force through the active layer; and at least one spacer arranged to maintain a separation between two or more layers in the sensor until an external force is applied.

The invention relates to the technical field of logging while drilling, and particularly provides a logging while drilling electromagnetic wave resistivity logging inversion method. The method comprises the following steps: constructing an XGBoost feature screening module, and optimizing a data set through the XGBoost feature screening module to obtain an optimized data set; according to the method, a BiLSTM-Transformer model is constructed, an optimized data set is input into the model, an inversion result is obtained, the inversion precision and the calculation efficiency are improved, and inversion of the target stratum resistivity, the adjacent layer surrounding rock resistivity and the boundary distance under the anisotropic stratum model is achieved.

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The invention discloses a method and a system for constructing a multi-level geologic structure model based on electromagnetic detection, and the method comprises the steps: transmitting electromagnetic signals with different frequencies at all measurement points through an electromagnetic detector, carrying out the resistivity inversion through apparent resistance and impedance phase, obtaining a geologic electrical structure, dividing non-uniform and uniform electrical geology based on electromagnetic static displacement, and obtaining a multi-level geologic structure model. Analyzing an orthogonal component magnetic field to obtain an electromagnetic response parameter and a polarization ellipse parameter; determining an electric field diffusion curve; obtaining an electric field distribution model through finite difference method inversion; deducing underground geological spatial form and distribution law; and finally, calculating an electromagnetic response curved surface to obtain a two-dimensional profile curve, and performing three-dimensional reconstruction to obtain a multi-level geologic structure model. The method not only can improve the precision and reliability of the structure model, but also has good interpretability, and can be directly applied to a construction system of a multilevel geological structure model based on electromagnetic detection.

The invention provides an electronic wire harness voltage-withstanding performance optimization method, which comprises the following steps: establishing a complete electronic wire harness structure model by analyzing the resistivity and thermal expansion characteristics of a conductor material and combining the performance parameters of an insulating layer, a shielding layer and an outer sheath, and calculating the voltage-withstanding performance of the electronic wire harness by utilizing the technologies of finite element analysis, Monte Carlo simulation and the like. All the components are subjected to collaborative optimization, and accurate control over electric field stress distribution is achieved. Through iterative calculation and parameter adjustment, the overall voltage-withstanding performance of the wire harness can be accurately predicted under the multivariable coupling condition, and a mathematical model of a parameterized voltage-withstanding performance system is generated. The method not only improves the reliability of the electronic wire harness in an extreme environment, but also realizes the real-time evaluation of the voltage withstanding performance, and provides important technical support for the design and application of the electronic wire harness.