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244 results about "Electric resistivity" patented technology

Electrical resistivity is a measure of a material’s property to oppose the flow of electric current. This is expressed in Ohm-meters (Ω⋅m).

A thin film with epsilon phase gallium oxide heteroepitaxial structure and a preparation method thereof

PendingCN122105622APolycrystalline material growthFinal product manufactureMagnesium dopingHigh resistivity
The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.
Owner:SUN YAT SEN UNIV

Powder, conductive auxiliary agent, dispersion, composition, conductive layer, electrode mixture layer, electrode, secondary battery, method for producing dispersion, method for producing composition, and method for producing electrode

This powder comprises a fibrous carbon having a structure in which cylindrical carbon hexagonal net surfaces are laminated in the fiber thickness direction. The ratio of volume resistivity when the powder is compressed to 0.8 g / cm3 to the volume resistivity when the powder is compressed to 0.6 g / cm3 is not less than 0.545.
Owner:RESONAC CORP

A low eddy current r-t-b sintered magnet, a method for producing the same, and use thereof

This invention discloses an R-T-B sintered magnet with reduced eddy current losses, its preparation method, and its application. The magnet has partition grooves on one or two orientation surfaces, where each orientation surface is perpendicular to the orientation direction of the magnet. The partition grooves extend through the magnet in a first extension direction but not in a second extension direction. The first extension direction of the partition grooves is perpendicular to the orientation direction of the magnet, and the second extension direction is parallel to the orientation direction of the magnet. By creating crisscrossing partition grooves on the magnet and filling them with an insulating layer, this invention increases the resistivity of a thin layer on the magnet's surface by a certain thickness, significantly reducing motor power loss due to eddy current effects. The insulating layer filling the grooves increases the resistivity of both the magnet surface and the grooves, effectively preventing conduction due to poor processing or current breakdown when the groove width is narrow. It also compensates for the reduction in mechanical strength caused by the grooving, ultimately resulting in a low-eddy-current, high-strength sintered magnet.
Owner:YANTAI ZHENGHAI MAGNETIC MATERIAL CO LTD

A combined shear-resistivity testing device and method for soil-rock mixed fill material

This invention discloses a combined shear-resistivity testing device and method for soil-rock mixed fillers, belonging to the field of geotechnical engineering testing technology. It addresses the shortcomings of existing combined testing methods, such as unstable contact resistance, fluctuating electrical signals, and asynchronous data. The device includes a direct shear test, resistivity test, and data acquisition and control system. The shear test chamber has a multi-layered composite structure integrated electrode embedded in its inner wall, coupled with an array of spring needles, and features a stress-driven electrical connection and hardware synchronous triggering structure. The method completes the test through steps including sample preparation, system initialization, stress-driven electrical connection establishment, and synchronous triggering of the combined test. This invention achieves synchronous and accurate acquisition of shear mechanics and resistivity data, enabling real-time non-destructive characterization of the internal structural damage evolution of the sample, significantly improving testing accuracy and stability, and providing reliable technical support for the mechanical research and engineering applications of soil-rock mixed fillers.
Owner:THE SECOND ENG COMPANY OF CCCC FOURTH HARBOR ENG +1

NiFeP alloy interface barrier layer of n-type bismuth telluride-based thermoelectric element and preparation method thereof

PendingCN122373678ABismuth tellurideCopper electrode
The application discloses an n-type bismuth telluride-based thermoelectric element NiFeP alloy interface barrier layer and a preparation method thereof, and belongs to the technical field of thermoelectric materials and devices. The barrier layer in the application is an electroplated NiFeP ternary plating layer, the content of Fe is 15-20 wt%, the content of P is 2-4 wt%, the balance is Ni, the thickness is 5-10 microns, and the barrier layer is prepared through substrate pretreatment, electroplating solution preparation, electroplating deposition and post-treatment. The application also constructs a thermoelectric element containing the barrier layer, and the n-type bismuth telluride thermoelectric material layer is connected by a NiFeP alloy interface barrier layer, a SAC305 solder layer and a copper electrode layer in sequence. The barrier layer has excellent diffusion inhibition effect, the interface bonding strength is greater than 16 MPa and the contact resistivity is less than 8 mu omega cm after aging at 200 DEG C for 144 hours. 2 The preparation process is simple, the cost is relatively low, large-scale production is suitable, and the barrier layer is expected to play an important role in the application field of thermoelectric materials and devices.
Owner:SHANGHAI SECOND POLYTECHNIC UNIVERSITY

Method for testing the ion resistance of a separator

The application discloses a kind of diaphragm ion resistivity test methods, comprising the following steps: two pieces of same size foil, diaphragm to be measured and target electrolyte are made into only one layer diaphragm button cell;Pre-tightening force is applied to the prepared button cell;Linear sweep voltammetry in electrochemical workstation is used to test the linear voltammogram of button cell;According to the ion resistance and layer number curve diagram of different layer number diaphragm button cell, the calculation method of diaphragm ion resistivity is: ρ=k×S÷d, wherein the slope k is the ion resistance of the diaphragm, S is aluminum foil area, and d is diaphragm thickness;Through the test method of the application, it is not necessary to test the meaningless diaphragm electronic resistance in lithium battery, but directly test diaphragm ion resistivity, and the method is more accurate and can meet actual demand.
Owner:SHANGHAI ELECTRIC GOTION NEW ENERGY TECH (NANTONG) CO LTD

Method and device for measuring phase transition temperature of nickel-titanium alloy wire

This invention discloses a method and apparatus for measuring the phase transformation temperature of a nickel-titanium alloy wire. The method involves binding the positive and negative terminals of a resistance meter to both ends of the wire, fixing the bound wire to a movable rod, and using the movable rod to move the wire into a gradually changing silicone oil solution. A curve is obtained based on the resistivity of the wire and the corresponding temperature of the silicone oil solution. The martensitic transformation initiation temperature, martensitic transformation end temperature, austenitic transformation initiation temperature, and austenitic transformation end temperature of the wire are then determined from this curve. This invention shortens the thermal cycling process, which takes several hours in traditional methods, to just a few minutes by allowing the sample to move unidirectionally in a stable axial gradient temperature field. A single unidirectional movement can obtain complete phase transformation data in one direction, and a single complete forward and reverse movement can obtain all four characteristic phase transformation temperatures, improving detection efficiency by an order of magnitude.
Owner:XIAN THINKING INTELLIGENT MATERIAL CO LTD

Epitaxial silicon wafers and their manufacturing methods

In order to suppress the peeling of the annular protrusion formed by epitaxial processing, in an epitaxial silicon wafer (100) having a silicon epitaxial layer (2) on the main surface of a silicon wafer (1) having a chamfer (13), the aforementioned silicon wafer (1) contains boron and has a resistivity of 5 to 30 mΩ•cm. The resistivity of the aforementioned silicon epitaxial layer (2) is higher than that of the aforementioned silicon wafer 1. The thickness of the aforementioned silicon epitaxial layer 2 is 0.5 to 15 μm. The surfaces of the chamfer (131) and the end face (133) of the chamfer on the main surface side of the aforementioned silicon wafer (1) are covered by the aforementioned silicon epitaxial layer (2). The chamfer (132) on the back side has an annular protrusion (4). The annular protrusion (4) is formed by the boundary (14) of the region (R1) covered by the aforementioned silicon epitaxial layer (2) and the region (R2) not covered by the aforementioned silicon epitaxial layer (2).
Owner:SUMCO CORP

Test equipment for measuring buffer tape for high voltage cables and method of detection

The application provides a kind of test equipment for measuring buffer tape for high-voltage cable and its detection method, relating to the field of high-voltage cable auxiliary material detection, comprising: support, copper plate one, lifting device, copper plate one is arranged on the upper part of the support, the lifting device is arranged on the bottom of the support through insulating spacer, copper plate two is installed on the lifting platform of the lifting device;The insulating column is fixed through copper plate one, the measuring rod of the dial gauge is through the insulating column, the height of the measuring rod in the insulating column is adjusted by the limiting device, a plurality of insulating columns correspond to a plurality of dials;The upper terminal post is electrically connected with copper plate one, the lower terminal post is electrically connected with copper plate two, the upper terminal post and the lower terminal post are respectively electrically connected with the corresponding detection terminals of the multimeter, for connecting copper plate one and copper plate two into volume resistivity detection loop. Through the process of repeatedly adjusting the compression thickness, measuring resistance and calculating resistivity, a plurality of sets of volume resistivity data under different compression states can be obtained.
Owner:NINGBO QRUNNING CABLE CO LTD

A sealing wax and its method of manufacture and use

PendingCN122255945AMeet stringent usage requirementshigh melting pointNon-macromolecular adhesive additivesOther chemical processesPolymer scienceMicrocrystalline wax
The application belongs to the technical field of adhesives and sealants, and specifically provides a sealing wax as well as a preparation method and application thereof. The sealing wax comprises the following components in parts by mass: microcrystalline wax 40-60 parts, polyethylene wax 1-5 parts, ethylene-vinyl acetate copolymer 3-8 parts, low-molecular-weight polyisobutylene 2-5 parts, medium-molecular-weight polyisobutylene 2-5 parts, tackifying resin 15-20 parts, and flame retardant 3-5 parts. The number-average molecular weight of the low-molecular-weight polyisobutylene is less than 5000, and the viscosity-average molecular weight of the medium-molecular-weight polyisobutylene is 10000-40000. Through the design and mutual compounding of the components, the sealing wax has a high melting point, a low water absorption rate, a high volume resistivity, good high-temperature and low-temperature resistance, and strong waterproof and moisture-proof performance, high mechanical strength and toughness, high insulation, high transparency, and strong sealing effect, and has good flow leveling property and good flame retardant performance, and can meet the strict use requirements of high-end electronic equipment.
Owner:JIANGSU TAIER NOVEL MATERIAL CO LTD

Rockfall structure surface dynamic damage identification method based on resistance distribution state

The application discloses a dangerous rock mass structure surface dynamic damage identification method based on resistance distribution states, relates to the technical field of dangerous rock mass collapse monitoring and early warning of rock-soil slopes, and comprises the following steps: arranging electrode arrays on the two sides of the junction of a test dangerous rock mass and a stable bedrock; the electrode arrays comprise a group of power supply electrodes and multiple measuring electrodes; simulating the structure surface damage expansion process of the test dangerous rock mass based on a ladder type damage loading mode, and obtaining a dangerous rock mass crack damage factor in the structure surface damage expansion process; obtaining resistivity data corresponding to the structure surface damage expansion process based on the electrode arrays; constructing a damage-resistivity correlation model based on the dangerous rock mass crack damage factor and the resistivity data; and identifying the damage of the structure surface of a dangerous rock mass to be identified based on the damage-resistivity correlation model. The application alleviates the technical problem that hidden structure surface damage cannot be accurately captured in the prior art.
Owner:UNIV OF SCI & TECH BEIJING

Coil assembly and electronic expansion valve

This application discloses a coil device and an electronic expansion valve, belonging to the field of flow control. The coil device includes an electromagnetic pole plate, a coil frame, and a stator winding. The stator winding is wound around the coil frame, and the electromagnetic pole plate is disposed on the outer periphery of the coil frame. The conductor of the stator winding is copper-clad aluminum or aluminum, the resistivity of the conductor is ρ, and the axial length of the stator winding is H; satisfying: 0.02251Ω•mm² / m≤ρ≤0.029Ω•mm 2 / m, 6.8mm≤H≤9mm. The above settings allow the electronic expansion valve, which includes a stator winding made of copper-clad aluminum wire, to achieve both high driving force and low cost.
Owner:ZHEJIANG SANHUA INTELLIGENT CONTROLS CO LTD

Electrical Isolation Devices, Methods and Systems

A method of reducing leakage current from a patient to a ground potential through an applied part of a medical device includes defining a maximum permissible leakage current Amax from the patient to the ground potential when the patient is energized to an electric potential V and supplying the medical device with water having a resistivity value p through a fluid line having a length L and an inner diameter ID. The value of L and ID is selected to cause the fluid conduit filled with water of resistivity ρ to have a resistance of R high enough to maintain the leakage current from the patient to the ground potential below Amax.
Owner:NXSTAGE MEDICAL INC

A heat-conducting insulating photovoltaic encapsulant film, a preparation method and application thereof

PendingCN122278368ABi layerThermal insulation
This invention relates to the field of photovoltaic encapsulant film technology, and discloses a thermally conductive and insulating photovoltaic encapsulant film, its preparation method, and its application. The film is an integrated structure formed by double-layer co-extrusion, comprising upper and lower functional layers (each including 100 parts of matrix resin, 5-25 parts of BN@SiO2 core-shell composite filler, and 1.5-8 parts of functional microcapsules); the BN@SiO2 core-shell composite filler includes a BN@SiO2 core-shell structure with h-BN as the core and amorphous SiO2 as the shell, and a gradient interface layer grafted onto its outer surface (which, from the inside out, includes an anchoring layer covalently bonded to the SiO2 shell, a flexible stress-buffering crosslinking layer, and a hydrophobic outer layer); the fillers in the upper and lower functional layers have different orientations. The thermal conductivity of this film exceeds 1.0 W / (m·K), reducing the operating temperature of photovoltaic modules by nearly 20°C, and the volume resistivity after deflection exceeds 10¹. 5 It has a strength of Ω·cm and also possesses excellent resistance to PID, high-voltage insulation, and interfacial adhesion.
Owner:JIANGSU ZHONGLAI NEW MATERIAL TECH CO LTD

Electrodes, batteries, and battery packs

PendingCN122122698ACell electrodesElectrical batteryInterfacial resistance
According to an embodiment, an electrode is provided, comprising a current collector and an active material layer located on the current collector. The active material layer contains an active material and a conductive agent. The active material comprises a lithium nickel cobalt manganese composite oxide. The specific surface area S of the active material layer obtained by nitrogen adsorption is... BET The specific surface area S of the micropores containing the active material layer obtained by mercury intrusion porosimetry Hg Satisfying 0.8 BET / S Hg The relationship is <2.0. The volume resistivity R of the layer containing the active material is... V The interfacial resistance R at the interface between the current collector and the layer containing the active material is below 10 Ω·cm. I 0.5Ω·cm 2 Below. Volume resistivity R V With interface resistance R I The ratio of R V / R I 3cm ‑1 Above and 20cm ‑1 the following.​
Owner:KK TOSHIBA

Device and method for high speed metamagnetic resistive switching

ActiveUS12677602B1Electrical resistance and conductanceMagnetic phase
A device and method for high speed metamagnetic resistive switching provides a metamagnetic phase transitioning (MPT) portion formed on a substrate between terminals. The MPT portion is tuned for temperature-responsive transitions between magnetic phases through a transition phase. The phases are delineated by phase boundaries each traversed at different critical temperatures depending on direction of traversal. The critical temperatures of each phase boundary are mutually offset by a hysteretic shift. The MPT portion is boosted across one phase boundary responsive to thermal actuation pulsed in a first direction to reach or exceed both critical temperatures of that phase boundary in the first direction, and boosted across the other phase boundary responsive to thermal actuation pulsed in a second direction to reach or exceed both critical temperatures of that phase boundary in the second direction. The electrical conduction path is thereby adjusted in resistivity for switching between ON and OFF states.
Owner:GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE DIRECTOR NAT SECURITY AGENCY

A printed circuit made by an additive method

The utility model discloses a kind of printed circuits made of additive method, including substrate, patterned first adhesive layer and conductive powder circuit layer, first adhesive layer is attached to the top surface of substrate, conductive powder circuit layer is attached to the top surface of patterned first adhesive layer, the conductive powder includes metal conductive powder or non-metal conductive powder.The printed circuit made of additive method of the utility model has lower resistivity and cost.
Owner:JIANGXI DING WAA SAM TAI TECH CO LTD

A method for improving the electrical stability of nickel oxide thin films

PendingCN122081858ARaise the deposition temperatureImprove reliabilityVacuum evaporation coatingSputtering coatingFilm resistanceCrystallinity
This invention discloses a method for improving the electrical stability of nickel oxide thin films. Increasing the deposition temperature of the nickel oxide film and combining it with a post-deposition oxygen plasma surface treatment process can effectively suppress the degradation of the conductivity of the nickel oxide film. The concentration of conductive holes in nickel oxide films decreases sharply with the post-deposition storage time, leading to a significant increase in film resistivity and a substantial reduction in the reliability of devices based on this film. In this invention, by increasing the deposition temperature of the nickel oxide film, its crystallinity and structural stability are improved; and by treating the film surface with oxygen plasma, intrinsic point defects within the film are stabilized and the film surface is effectively passivated. Combining these two methods stabilizes the core source of conductive holes in the nickel oxide film—intrinsic point defects—and fundamentally suppresses the degradation of its electrical properties. This technology provides an effective way to solve the problem of poor electrical stability of nickel oxide films and has the significant advantages of low equipment requirements and simple process operation, possessing good practical application value.
Owner:BEIJING UNIV OF TECH

A positive electrode sheet and a battery cell

The utility model relates to lithium cell technical field discloses a kind of positive plate and electric core, positive plate, including current collector, filling layer and active material layer;The current collector extends in the first direction;The filling layer is located in the side face of the current collector and the positive lug rubber paper covering area corresponds, and / or, at least one end of the current collector in the first direction;The active material layer and the filling layer are located in the same side face of the current collector, and the active material covers the coating area of the current collector and the filling layer;Wherein, the lithium ion diffusion coefficient of the filling layer is less than the lithium ion diffusion coefficient of the active material layer;And / or, the volume resistivity of the filling layer is greater than the volume resistivity of the active material layer.The utility model has the beneficial effect that: reduce the lithium ion concentration difference of the lug periphery and OH area of positive plate in the process of charge and discharge, reduce the generation of lithium precipitation phenomenon, improve the use safety performance and life of electric core.
Owner:ZHEJIANG LIWINON ENERGY TECHNOLOGY CO LTD

Transparent microcrystalline glass for insulators and method of manufacture

This invention discloses a transparent microcrystalline glass for insulators and its preparation method, belonging to the field of insulator technology. The method includes the following steps: S1: Weighing each raw material according to the specified ratio and mixing them evenly to obtain a batch; S2: Melting and homogenizing the batch to obtain molten glass; S3: Shaping the molten glass and then annealing it to obtain a base glass; S4: Heat-treating the base glass to obtain the microcrystalline glass. This invention, by limiting the proportions of specific components, achieves a microcrystalline glass with a transmittance ≥80%@550nm, a dielectric constant of 6-7@50Hz, a dielectric loss ≤0.004, and a resistivity ≥10. 13 It has a strength of Ω·cm, a bending strength of ≥140MPa, and combines high transparency, excellent electrical insulation and mechanical properties.
Owner:CNBM RESEARCH INSTITUTE FOR ADVANCED GLASS MATERIALS GROUP CO LTD

Battery immersion liquid insulation detection device and detection method

The application provides a battery immersion liquid insulation detection device and method. The device comprises: a resistivity acquisition module arranged in the immersion liquid of a battery module, used for acquiring the resistivity of the immersion liquid; a dielectric constant acquisition module arranged in the immersion liquid, used for acquiring the dielectric constant of the immersion liquid; an insulation impedance acquisition module electrically connected with a battery cluster, used for acquiring the insulation impedance of the positive and negative electrodes of the battery cluster to the ground; and a control module electrically connected with the resistivity acquisition module, the dielectric constant acquisition module and the insulation impedance acquisition module, respectively, used for controlling the output of the immersion liquid insulation detection result according to the resistivity, the dielectric constant and the insulation impedance. The application acquires the electrical parameters of the immersion liquid and the insulation impedance of the battery cluster through the resistivity acquisition module, the dielectric constant acquisition module and the insulation impedance acquisition module, respectively, integrates and analyzes through the control module, realizes comprehensive acquisition and accurate detection, and greatly improves the accuracy of the battery immersion liquid insulation detection.
Owner:ZTE CORP

A GeTe-based thermoelectric thin film material with excess Ge, its preparation method and application

This invention discloses a GeTe thermoelectric thin film material with excess Ge, its preparation method, and its applications. The chemical formula of the material is GeTe. 1+ x Te, where x is the mole fraction of excess Ge, and 0.04 ≤ x ≤ 0.25. Different proportions of Ge were obtained by co-sputtering with GeTe and Te targets at elevated temperatures. 1+x Simultaneously, a (003) texture was successfully constructed for the Te thermoelectric thin film material. 1+x The Te thermoelectric thin film material effectively reduces the carrier concentration of the system through excessive Ge self-doping. The formation of preferred film orientation allows the system to maintain a low resistivity despite the decrease in carrier concentration. Simultaneously, the absence of Ge nanoprecipitates within the system prevents further negative impacts on the film's conductivity. In summary, this method enables GeTe thin films to exhibit a very high power factor, exceeding 2800 μW / mK at room temperature. 2 When heated to 600K, it can exceed 5200μW / mK. 2 And achieved ~mW / cm² in the device demonstration experiment. 2 The high output power density on the order of magnitude lays a solid foundation for the application of this Ge-rich thin film in practical thin-film devices.
Owner:DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES

Electrochemical apparatuses and methods of operating them

PCT designated stageWO2026109889A1CellsElectrodesElectrolytic agentChemical reaction
The present invention provides an electrochemical apparatus (300a) comprising an electrolytic cell (100) for producing an electrolysis product (50, 60) and a reaction vessel (200) for consuming at least some of the electrolysis product (50, 60) as a reagent in an exothermic chemical reaction. The electrolytic cell (100) comprises an electrochemical device, itself comprising an electrode (10) and a conduit (20). The electrode (10), which is configured as an electrode (10, 70) of the electrolytic cell (100), has a first part for immersion in an electrolyte, a second part for making electrical contact with a current-carrying conductor, and a third part between the first and second parts for making thermal contact with a heat transfer fluid (HTF). The conduit (20) is arranged to bring the heat transfer fluid (HTF) into thermal contact with the third part of the electrode (10). The electrode (10) is made of carbon, which has reduced electrical resistivity and thermal conductivity at temperatures above ambient. Therefore, if the third part of the electrode (10) is heated by means of the HTF, its electrical resistivity and thermal conductivity are reduced. The former enables more efficient flow of electrical current between the first and second parts of the electrode and therefore reduces the total internal resistance of the electrolytic cell (100). The latter reduces the flow of heat between the first and second parts of the electrode (10) and therefore helps to prevent heat loss from the electrolytic cell (100) via the electrode (10) to the current-carrying conductor. Both effects make the electrolytic cell (100) more energy efficient. The apparatus (300a) further comprises a product transfer pathway (110) arranged to transfer the electrolysis product (50, 60) from the electrolytic cell (100) to the reaction vessel (200), and a first heat exchanger (210) arranged to transfer heat (Q) from the reaction vessel (200) to the heat transfer fluid (HTF) in the conduit (20). The electrochemical device may therefore be used to inject waste heat from the exothermic chemical reaction into the electrolytic cell (100). This reduces the electrical power consumption of the electrolytic cell and also makes the combination of the electrolytic cell (100) with the exothermic chemical reaction supplying the heat (Q) more energy efficient overall. The invention also provides methods of operating such an electrochemical apparatus. The invention is particularly suited to producing Group 1 and Group 2 metals by electrolysis with increased energy efficiency.
Owner:CAVALIER MARCUS

Semiconductor epitaxial layer resistivity measurement device and method

PendingCN122373767AFlat bandVoltage source
The application belongs to the technical field of semiconductor testing and relates to a semiconductor epitaxial layer resistivity measuring device and method. The measuring device comprises a sample table for placing a sample to be measured, a pretreatment unit for stabilizing the surface charge of the sample to be measured and a measuring unit for detecting the resistivity of the sample to be measured. The pretreatment unit comprises a second electrode and a first voltage source. The second electrode is connected to the front surface of the sample to be measured. The first voltage source forms a first closed loop with the second electrode and a first electrode on the back surface of the sample to be measured. The first voltage source provides a first voltage to the second electrode. The pretreatment unit provided in the application directly stabilizes the surface charge of the sample to be measured by actively applying an electric field, greatly improves the repeatability of CV measurement, effectively suppresses the flat-band voltage drift phenomenon and thus obtains more real and accurate resistivity values of the sample to be measured.
Owner:ZING SEMICON CORP

Gradient resistivity measurement system, instrument string, and logging system

The application relates to the technical field of well logging, and discloses a gradient resistivity measurement system, an instrument string and a well logging system, which comprise a harnessed head and a telemetry instrument located on the instrument string, the harnessed head is provided with an electrode assembly, the telemetry instrument comprises a mounting position of a mud resistivity plate and corresponding data transmission devices; a gradient resistivity plate, which is detachably installed in the mounting position in a state that the mud resistivity plate is not installed in the mounting position, and is electrically connected with the electrode assembly and the data transmission devices respectively, is used for measuring the gradient resistivity of a formation through the electrode assembly, and sending the measurement result of the gradient resistivity to the data transmission devices to be transmitted to a ground system. In this way, the problem that the effect of a mode of separately manufacturing an electrode sub to realize the gradient resistivity measurement of the formation is poor is solved, the length of the instrument string and the number of connection points are not affected, the cost is reduced, and the gradient resistivity of the formation and other well logging items in the instrument string can be completed at one time.
Owner:CHINA PETROCHEMICAL CORP +3