1400 results about "Electric resistivity" patented technology

The invention discloses a method and a system for constructing a multi-level geologic structure model based on electromagnetic detection, and the method comprises the steps: transmitting electromagnetic signals with different frequencies at all measurement points through an electromagnetic detector, carrying out the resistivity inversion through apparent resistance and impedance phase, obtaining a geologic electrical structure, dividing non-uniform and uniform electrical geology based on electromagnetic static displacement, and obtaining a multi-level geologic structure model. Analyzing an orthogonal component magnetic field to obtain an electromagnetic response parameter and a polarization ellipse parameter; determining an electric field diffusion curve; obtaining an electric field distribution model through finite difference method inversion; deducing underground geological spatial form and distribution law; and finally, calculating an electromagnetic response curved surface to obtain a two-dimensional profile curve, and performing three-dimensional reconstruction to obtain a multi-level geologic structure model. The method not only can improve the precision and reliability of the structure model, but also has good interpretability, and can be directly applied to a construction system of a multilevel geological structure model based on electromagnetic detection.

The invention discloses multi-solvent synergistically activated low-temperature semi-sintered copper paste and a preparation method and application thereof, and belongs to the technical field of conductive paste. The multi-solvent synergistically activated low-temperature semi-sintered copper slurry comprises the following raw material components in percentage by mass: 82-88% of conductive filler, 2-3% of a resin carrier, 4-7% of an activating solvent, 4-7% of a dispersing solvent and 2-3% of a curing agent. Through cooperation of multiple solvents, full-stage activation of the copper particles is achieved, pre-connection and sintering of the copper particles before resin is completely crosslinked and cured are promoted, densification of the overall structure is improved, the insulation barrier effect of the resin is effectively avoided, the resistivity is reduced, meanwhile, inhibition of the resin on sintering of the copper particles is solved, and the service life of the copper particles is prolonged. And good balance between conductivity and interface adhesion is realized. Through resin curing, chemical bonding between the slurry and the substrate can be enhanced, a metal bond network among copper particles is expanded, and mechanical connection stability and electrical performance are guaranteed.

The invention relates to the technical field of lead-acid batteries, and particularly discloses a graphene-based composite material as well as a preparation method and application thereof. The graphene-based composite material comprises a graphene-CNTs three-dimensional composite skeleton, and tin dioxide and titanium dioxide which are loaded on the graphene-CNTs three-dimensional composite skeleton. In the material provided by the invention, the graphene-CNTs three-dimensional composite skeleton has excellent conductivity and mechanical strength, so that the resistivity of a negative plate is remarkably reduced, structural support is provided, and the binding force of lead powder and a negative electrode metal plate grid is enhanced, thereby reducing the falling of active substances and improving the cycling stability of the battery; meanwhile, tin dioxide and titanium dioxide are introduced into the graphene-based composite material and form a multi-stage synergistic system with the graphene-CNTs three-dimensional composite framework, so that the problems that the negative electrode of the lead-acid battery is easy to separate hydrogen, the conductivity is insufficient and active substances fall off can be effectively solved, and the cycle performance of the battery is remarkably improved.

The invention discloses a conductive paste, a metallized substrate and a metallization process for manufacturing the metallized substrate, the conductive paste comprises metal particles, the particle size of the metal particles is 0.1-10 [mu] m, and the mass ratio of the metal particles is 80-98%; in the metallization process, a copper layer is arranged on the hole wall of a through hole or a blind hole of a substrate, then conductive slurry is filled in the hole with the copper layer, heating sintering treatment is carried out, and after heating sintering is carried out in an inert gas atmosphere at the temperature of less than or equal to 300 DEG C, metal particles can be fused to form a connection structure or a eutectic structure. A reinforcing layer can be formed between the nano metal particles and the copper layer, and the reinforcing layer is a metal bonding layer or an intermetallic compound layer. The metallization mode is suitable for a through hole or a blind hole of a glass / silicon / ceramic substrate with a high aspect ratio and a micro aperture, and the technical problems that complete filling is difficult to achieve and filling defects exist in an existing electroplating process, the electrical resistivity of conductive paste is high, and the interface bonding force is insufficient can be solved.

The invention belongs to the technical field of semiconductor device performance testing, and particularly relates to a VCSEL epitaxial wafer resistivity distribution measuring method and system, and the method comprises the steps: constructing a three-dimensional discretization model representing an epitaxial wafer and an unknown parameter vector containing the vertical resistivity, the top transverse resistivity and the substrate leakage junction nonlinear resistance; a physical response function is defined, the vector is iterated through a discrete point fitting algorithm, so that the total residual error between the analog voltage difference output by the function and the actually measured voltage value under the cross-order-of-magnitude current is minimum, and the real vertical resistivity is extracted from the optimal parameter vector; and obtaining the vertical resistivity of each point on the two-dimensional test point grid so as to generate a distribution diagram and carry out anomaly detection. According to the invention, the problem of measurement distortion caused by the leakage defect of the substrate is solved, and the measurement accuracy of the vertical resistivity is improved.

The invention discloses a natural electric field-electric field joint detection and inversion method based on GMM prior, and relates to the technical field of tunnel engineering geological detection, and the method comprises the steps: obtaining the resistivity and natural potential observed in a to-be-inverted region; an equivalent body source of a natural potential is parameterized into a body source vector on a grid unit, weighted L1 sparse regular constraint is introduced into the body source vector, a GMM prior model is used as underground electrical structure prior shared across physics fields, and a multi-task joint inversion objective function of a shared underground electrical structure label is established; and performing inversion iteration by adopting maximum posteriori, updating parameters of the GMM prior model and the underground electrical structure label by adopting an expectation maximization algorithm until an end condition is met, and obtaining a joint inversion imaging result of the tunnel water-rich anomalous body. The advantages of a multi-source electrical method are fused, underground electrical structure priori is introduced, Bayesian uncertainty analysis is combined, and high-resolution and high-reliability recognition of the water-rich anomalous body in front of the tunnel is achieved.

The invention discloses an inflation method for regulating and controlling the growth rate of silicon carbide crystals and a related device, and relates to the technical field of semiconductors, and the inflation method comprises the following steps: obtaining the mass loss rate of a silicon carbide crystal growth system based on a weighing sensor; the quality loss rate is compared with a theoretical loss rate, a deviation rate is obtained, and the theoretical loss rate is the quality loss rate meeting the production requirement under the current technology; acquiring a growth stage parameter, judging whether the growth stage parameter reaches a preset value or not, if the growth stage parameter reaches the preset value, adopting a first control strategy, and if the growth stage parameter does not reach the preset value, adopting a second control strategy, the growth stage parameters comprise the silicon carbide crystal thickness corresponding to the preset crystal growth time. According to the method, the uniformity of the resistivity of the silicon carbide crystal is improved by regulating and controlling the doping gas proportion in the growth process of the silicon carbide crystal.

The invention provides an intelligent dust remover control method and system based on electrostatic adsorption. The method comprises the following steps: acquiring dust concentration, temperature and humidity and particulate matter impedance spectrum data of a working environment, screening key measurement points, applying an alternating electric field to obtain an impedance phase difference map, performing frequency spectrum consistency verification on the impedance phase difference map and the impedance spectrum data after temperature and humidity compensation, and calculating conductivity discrimination parameters of dust with different particle sizes; deploying a parallel metal plate adsorption array containing an insulating dielectric layer, and adjusting the plate spacing to change the electric field intensity; generating a resistivity space distribution thermodynamic diagram based on the conductivity discrimination parameters, and cooperating with drive board spacing adjustment and voltage output according to the resistance gradient change of the insulation and conductive dust gathering area and the migration path; and a measurement point location screening strategy is updated in combination with the spacing adjustment amplitude and the voltage change rate, and the impedance spectrum precision is optimized. Precise identification of insulation and conductivity multi-mode dust and dynamic electric field self-adaptive adsorption are achieved, the dust removal efficiency of a complex environment is improved, and energy consumption is reduced.

The invention discloses a method for growing a low-surface-defect epitaxial wafer on a heavily-doped silicon substrate and the epitaxial wafer, and belongs to the field of semiconductor material preparation. The method comprises the following steps: carrying out rapid heat treatment on a heavily doped silicon substrate of which the resistivity is not greater than 1.15 m omega.cm in an inert atmosphere at the treatment temperature of 1000-1500 DEG C and the heating / cooling rate of 10-120 DEG C / s, and keeping the high temperature for 30-120 seconds; then HCl gas phase polishing is carried out at the temperature of 650-1250 DEG C, and mixed gas of HCl and hydrogen is introduced to remove a surface silicon layer by 50-150 nm; and finally growing an epitaxial layer. And the substrate can be subjected to particle detection and screening, and only the substrate with the specific pattern defect is subjected to the treatment. According to the method, through the synergistic effect of RTP and HCl polishing, in-vivo defect repairing and surface finishing are achieved, the number of LPDs, larger than or equal to 55 nm, on the surface of the epitaxial wafer is stably reduced to 10 or below, and the quality of the epitaxial wafer is remarkably improved.

The invention belongs to the related technical field of pipe network leakage detection, and provides a comprehensive detection method and system for leakage of an underground sewage pipe network in an industrial park in order to solve the problems that existing pipe network leakage detection is inaccurate, large-area detection is difficult and the like. Performing inversion on the acquired data by adopting prior constraint, and judging a detection section of suspected leakage abnormity according to a resistivity profile; further detecting the detection section with the suspected leakage abnormity by using a high-density resistivity method and an induced polarization method, refining a grid based on an electromagnetic method result and prior information, introducing directional smooth constraint and minimum gradient support to perform inversion constraint on acquired data, and positioning a leakage area; sampling to judge the authenticity of the leakage of the detected area, and peeping, measuring and positioning the leakage area through the pipeline robot; and rapid identification and delineation of the pipe network leakage risk area of the industrial park are realized through cooperation of multiple methods.

The invention provides a tank-type circuit breaker AC / DC voltage withstand test electric field improvement method and device and a storage medium, and the device comprises an epoxy resin composite insulator embedded with an aluminum alloy spherical shell, and the spherical shell achieves the equipotential connection with the wire outlet end of a circuit breaker sleeve through conical surface cooperation. And the curvature radius is optimally designed to transfer an electric field peak value to an equatorial region. The spherical shell is coated with a semi-conductive silicone rubber layer with resistivity distributed in a gradient manner, and the outer insulator forms a multi-stage umbrella skirt structure. During installation, dimensional tolerance self-adaptive compensation is achieved through a cam locking mechanism of the floating flange, and the belleville spring set provides axial sealing pre-tightening force. The method comprises four core processes of composite structure coaxial installation, gradient electric field regulation and control, dynamic sealing locking and electric heating state verification. According to the scheme, an electrode structure is reconstructed to suppress point discharge, space charge accumulation is blocked through dielectric layer resistivity gradient distribution, the creepage distance along the surface is prolonged through the multi-stage umbrella skirts, and the technical defect that the safety distance is shortened by a traditional grading ring is overcome.

To provide a water electrolysis evaluation device controlling a liquid level in a gas-liquid separation tank steady, while controlling the electric characteristics of an electrolytic solution.SOLUTION: There is provided a water electrolysis evaluation device comprising a gas-liquid separation tank connected to a test piece via an introduction line and separating a fluid led out of the test piece into oxygen gas or hydrogen gas and an electrolytic solution, an electric characteristics measurement unit for measuring electric characteristics indicating the conductivity or specific resistance of the electrolytic solution included in the fluid, a discharge line provided with a drainage amount adjustment device for discharging the electrolytic solution from the gas-liquid separation tank and adjusting a drainage amount of the electrolytic solution, a supply line provided with a supply amount adjustment device for supplying the gas-liquid separation tank with water of electric characteristics different from that of the electrolytic solution present in the gas-liquid separation tank and adjusting the supply amount of water, and a flow rate control unit for controlling the drainage amount adjustment device and the supply amount adjustment device based on the electric characteristics measured by the electric characteristics measurement unit.SELECTED DRAWING: Figure 1

The invention provides a phosphorus emitter passivation structure and a preparation method thereof, the passivation structure comprises a phosphorus emitter, the phosphorus emitter comprises silicon, phosphorus, hydrogen, carbon and / or nitrogen, the surface of the phosphorus emitter is provided with a nano silicon oxide layer, the phosphorus emitter comprises an electric injection region and a doped region, the electric injection region is provided with a conductive layer at a corresponding position, and the doped region is provided with a conductive layer at a corresponding position. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon and / or nitrogen concentration of the electric injection region is higher than that of the electric injection region. Partitioned passivation is performed on the surface of the phosphorus emitter, and carbon and / or nitrogen atoms are introduced into the doped region, so that the interface passivation effect is improved; the electric injection region is not subjected to carbon and nitrogen doping and is not provided with a passive film, so that the influence of passivation on the contact resistivity is reduced; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the phosphorus emitter can be further eliminated, and the recombination current is reduced.

The invention discloses a rapid three-dimensional electromagnetic simulation method and verification device for a large-scale uninsulated coil, and aims to solve the problems of large calculation load, difficulty in homogenization, poor field-circuit coupling convergence and low result precision of the three-dimensional simulation of the existing large-scale uninsulated coil. The simulation method comprises the following steps: establishing a homogenized coil which does not divide specific turns, and setting anisotropic resistivity; constructing a current source area intercepted on the coil body and a free turn-to-turn resistance area connected in parallel with the current source area; applying current source excitation according to an open loop / closed loop coil; and the precision is ensured through radial grid encryption and result convergence verification. The verification device comprises a three-dimensional multi-turn verification coil, a direct current source, a multi-direction alternating external field applying module and a voltage and magnetic field measuring unit, direct current is supplied, an alternating external field is applied, and the simulation accuracy is measured and verified in real time. The method is simplified in modeling, rapid in calculation, good in convergence and high in precision, adapts to open-loop / closed-loop and single-cake / multi-cake coils, and is suitable for large uninsulated superconducting coils in rotary and linear motors, nuclear fusion equipment and the like.

The invention discloses a power module packaging structure. According to the chip, a non-linear conductive material coating is arranged at the connecting part of the edge of each metal bonding pad and a chip substrate, and the connecting part of the edge of each metal bonding pad and the chip substrate is the joint of the metal bonding pad, the chip substrate and an insulating encapsulating material, namely the three-phase point. Through the arrangement of the non-linear conductive material coating, the resistivity is high in a normal low field, and electric leakage is prevented; and when the local electric field intensity is increased sharply (terminal at the three-phase junction), the resistivity is reduced sharply, the electric field is uniformly dispersed, and the peak of the local electric field is inhibited, so that the overall dielectric strength and creepage distance of the module are improved. According to the technical scheme, the insulation reliability of the power module under high-voltage, high-frequency and high-temperature working conditions is remarkably improved, particularly, partial discharge is restrained at a three-phase point, the service life of the module is prolonged, and the production and maintenance cost is reduced.

Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

An electroactive lens with raised resistive bridges is disclosed. The resistive bridges can connect many ring electrodes in an electroactive lens with a relatively small number of bus lines. These resistors are typically large to prevent excessive current consumption. Typically, they are placed in the same plane as the ring electrodes, which means that the ring electrodes are further apart or made discontinuous to accommodate the resistors. But further separating the ring electrodes or making them discontinuous degrades the optical quality of the lens. Placing the ring electrodes and resistors on layers separated by an insulator allows the ring electrodes to be closer together and continuous and have a high enough resistance to limit current consumption. It also relaxes the constraints on feature size and placement during processing to make the lens. And because the resistors and electrodes are on different planes, they can be formed of materials with different resistivities.

The invention relates to the technical field of batteries, and discloses a battery and a battery pack. The shell comprises a shell main body and a cover plate, at least one end of the shell main body is provided with an opening, the cover plate covers the opening and is electrically connected with the battery cell, the cover plate comprises a plurality of laminated plate bodies, the plate body far away from the battery cell is a first plate and the plate body close to the battery cell is a second plate along the lamination direction of the plurality of plate bodies, the first plate comprises a non-titanium metal element, and the second plate comprises a non-titanium metal element. The second plate comprises a titanium element, the conductivity of the metal element is larger than that of the titanium element, the ratio of the thickness d of the first plate to the thickness e of the second plate is a, the resistivity of the cover plate is b, the content of the titanium element in the second plate is c%, and the requirement that c * b / a is larger than or equal to 11 and smaller than or equal to 130 is met. By controlling the relationship among the content of titanium, the ratio of the thickness d of the first plate to the thickness e of the second plate and the resistivity of the cover plate, the over-current capability of the cover plate is improved, the resistance in the current transmission process is effectively reduced, and the temperature rise of the cover plate is prevented from being increased.

The invention discloses a dangerous rock mass structural surface dynamic damage identification method based on a resistance distribution state, and relates to the technical field of rock-soil slope dangerous rock mass collapse monitoring and early warning, and the method comprises the steps: respectively arranging electrode arrays at two sides of the junction of a test dangerous rock mass and a stable bedrock; the electrode array comprises a group of power supply electrodes and a plurality of measuring electrodes; simulating a structural surface damage expansion process of the test dangerous rock mass based on a stepped damage loading mode, and obtaining a dangerous rock mass fracture damage factor in the structural surface damage expansion process; acquiring resistivity data corresponding to the damage expansion process of the structural surface based on the electrode array; based on the dangerous rock mass fracture damage factors and the resistivity data, constructing a damage and resistivity correlation model; and based on the damage and resistivity correlation model, carrying out damage identification on the structural surface of the to-be-identified dangerous rock mass. The technical problem that in the prior art, it is difficult to accurately capture hidden structural surface damage is solved.

The invention discloses a test device and method for in-situ monitoring of hydrates by using thermal-electric coupling, and belongs to the technical field of experiments for simulating generation and decomposition of hydrates in laboratories. The device comprises a hydrate synthesis and decomposition system, a temperature control system, a pressure control system, a thermal-electric parameter measurement system, a gas collection system and a data acquisition and user monitoring system, wherein a multi-point temperature sensor, a resistivity measurement probe and a heat conductivity coefficient measurement probe are arranged in a reaction kettle cavity; in-situ and real-time monitoring of multiple physical property parameters such as temperature distribution, resistivity change and heat conductivity coefficient in the whole process of generation and decomposition of the hydrate sample can be realized. According to the invention, thermal-electric coupling monitoring can be realized under high-pressure and low-temperature conditions, and a high-precision means is provided for hydrate formation mechanism research and exploitation processes.

The invention discloses a resistivity static sounding in-situ test probe for evaluating unfrozen water content and ice content of frozen soil and a working method thereof.The test probe comprises a sounding probe body and a probe rod which are vertically distributed, the sounding probe body is located at the bottom end of the probe rod, and a coaxial cable is arranged in the probe rod in a penetrating mode; a broadband signal generator, an embedded data processor, an inclinometer, an annular electrode array, a temperature sensor, a pressure measuring assembly and a friction cylinder are sequentially arranged in the probe rod from top to bottom. According to the invention, resistivity inversion calculation and temperature compensation calculation are carried out through the embedded data processor, and end resistance, friction resistance, inclination, temperature, unfrozen water content, ice content and thaw collapse coefficient are output; according to the method, mechanical parameters and electrical parameters are synchronously obtained, multi-physical field coupling analysis is combined, the frozen soil thaw collapse deformation in-situ testing method based on broadband resistivity static sounding is constructed, and the defect that the content of unfrozen water and the content of ice in a soil body cannot be detected through an existing static sounding technology in China is overcome.

A fixing rotating member comprising: a base material and an electro-conductive layer on the base material; the electro-conductive layer extending in a circumferential direction of an outer peripheral surface of the base material, the electro-conductive layer comprising silver, an average crystal grain size of crystals of the silver observed in a cross section along a circumferential direction of the electro-conductive layer being 20 to 200 nm, and the electro-conductive layer having a volume resistivity of 1.0×10−8 to 8.0×10−8 Ω·m.

The invention provides an underground engineering leakage three-dimensional detection method, which comprises the following steps of: arranging a three-dimensional electrode system on an outer side and an inner side drill hole of a to-be-detected underground enclosure structure, and detecting and recording potential data and space coordinates of an electrode array; repeatedly collecting and preprocessing the collected potential data to eliminate the influence of current intensity difference and stratum conductivity difference; based on the physical coupling relationship between the electric field intensity and the formation resistivity, filling the data blind area of the inter-hole area; the three-dimensional space model of the electric field intensity is optimized and fitted through an intelligent algorithm, a three-dimensional equal-straight-plane image of the electric field is generated after data reliability is verified, and space coordinates of an electric field abnormal area are marked as suspected leakage points. The problems that in an existing detection method, positioning is not accurate, and the applicability is limited are solved.

The invention discloses a grounding resistance thermal-electric coupling prediction method and system suitable for various soil scenes. The method comprises the following steps: acquiring an electrode parameter, a soil parameter, a grounding fault parameter and initial temperatures of an electrode and soil; calculating an electrode current and a soil leakage current of the time step based on the electrode and soil resistivity of the time step; based on the electrode current and the soil leakage current of the time step, calculating the electrode temperature, the soil radial temperature distribution and the grounding potential rise of the time step by adopting a finite difference method; based on the electrode temperature and soil radial temperature distribution of the time step, updating the electrode resistivity and the soil resistivity of the time step + 1; if the end of the fault time is not reached, returning to continuously calculate the temperature of the electrode and the soil at the time step + 1; otherwise, outputting the electrode temperature and soil radial temperature distribution of each time step. According to the invention, thermal-electric dynamic coupling is considered, and accurate evaluation of the performance of the grounding system is realized.

Provided is an epitaxial wafer having a silicon epitaxial film on a silicon single crystal substrate having a resistivity of 10 [Omega] * cm or more and 5000 [Omega] * cm or less, the epitaxial wafer being characterized in that the concentration of carbon atoms in the silicon epitaxial film is 5 * 1017 atoms / cm < 3 > or more and less than 2 * 1019 atoms / cm < 3 >, and carbon defects are formed in the silicon epitaxial film. As a result, provided are: an epitaxial wafer and an SOI wafer which can be manufactured with a small number of steps without using a high-resistivity substrate, are easy to process, and more reliably reduce harmonics; and a method for manufacturing the epitaxial wafer and the SOI wafer.

The invention discloses a magnetic electronic device for generating track torque by using a metal vanadium or titanium track Hall effect and a manufacturing method thereof. The device comprises a substrate, a track Hall structure containing a vanadium or titanium layer, and a heavy metal layer and a ferromagnetic layer which are adjacent to the track Hall structure, when a charge current passes through the vanadium or titanium layer, a transverse track current is generated based on the track Hall effect, and the track current is injected into the ferromagnetic layer and then converted into an effective track torque for controlling the magnetization state of the ferromagnetic layer. Preferably, the ferromagnetic layer has a perpendicular magnetic anisotropy. According to the invention, the light transition metal vanadium or titanium is used as the track Hall material, the experiment proves that a huge track Hall angle greater than 0.45 can be obtained, and meanwhile, the resistivity of the material is lower, so that the shunting phenomenon can be reduced in an actual device, and the critical current density for realizing write-in flipping can be obviously reduced. The device is simple in structure and compatible with an existing semiconductor process, and a brand new material platform is provided for developing a low-power-consumption and high-density magnetic random access memory (MRAM).

The present application relates to the technical field of acoustic wave device, and particularly relates to a preparation method of piezoelectric substrate, piezoelectric substrate and acoustic wave device. The method comprises the following steps: obtaining a supporting substrate; making a carrier trapping layer on the supporting substrate; making a dielectric layer on the carrier trapping layer; and making a piezoelectric film layer on the dielectric layer; wherein, the surface of the supporting substrate close to the carrier trapping layer is a first surface, and the surface of the dielectric layer close to the carrier trapping layer is a second surface; before making the piezoelectric film layer on the dielectric layer, the method further comprises making a scattering interface between the first surface and the second surface, and the scattering interface is used for scattering spurious waves. The carrier trapping layer can effectively inhibit the surface parasitic conductance effect, prevent the resistivity of the substrate from decreasing, and thus improve the loss and distortion of the piezoelectric substrate. The scattering interface can effectively inhibit the spurious waves caused by the interface reflection of the multilayer structure in the acoustic wave device, and thus improve the working stability of the device at high frequency.

The invention provides a preparation method for improving resistivity uniformity of a whole rod of heavily-doped monocrystalline silicon, and relates to the technical field of heavily-doped monocrystalline silicon drawing, in the crystal drawing process, crystal bar drawing is carried out through first furnace pressure from seeding to growing to a first equal-diameter preset length; drawing a second equal-diameter predetermined length from the first equal-diameter predetermined length, and reducing the furnace pressure according to a predetermined rate to reduce the first furnace pressure to a second furnace pressure; after the diameter is equal to a second preset length, crystal bar drawing is carried out through second furnace pressure; in the crystal growth process, along with crystal growth and furnace pressure stage reduction, segregated doped gas is continuously volatilized, so that the resistivity of the tail of a crystal bar is improved, the axial resistivity fluctuation range is controlled within + / -5%, and the harsh requirement of a high-end semiconductor device for a substrate material is met.

The invention provides a microwave pulse electric field vibration synergistic fracturing and permeability increasing gas extraction promoting device and method, and relates to the technical field of low-permeability coal seam fracturing and permeability increasing. According to the method, multi-physical field coupling synergistic interaction is achieved, and the fracturing efficiency and range are greatly improved. According to the invention, deep collaboration of multiple physical fields is realized through a specific time sequence and energy ratio. The thermal stress generated by microwave preheating enables a large number of microcracks to be generated in the coal body and soften the coal quality, and the resistivity and the medium strength of the coal body are reduced. In the state, the pulsed electric field with lower voltage can preferentially and effectively break down and expand the fracture network along the micro-fracture path; meanwhile, high-frequency mechanical vibration not only efficiently transmits energy to the tip of the fracture to generate stress concentration to promote extension of the fracture, but also disturbs coal particles to promote gas desorption. Through three-field cooperation, cracks can be more efficiently initiated, expanded and communicated in a three-dimensional space, a three-dimensional complex crack network far beyond the action range of a single technology is formed, and the overall permeability of a coal seam is remarkably improved.

The invention discloses a silver-gold-palladium-chromium-indium-yttrium alloy and a preparation method and application thereof, and belongs to the technical field of precise materials for semiconductor detection. The alloy comprises the following components in percentage by mass: 15%-20% of Au, 15%-18% of Pd, 8%-12% of Cr, 0.1%-0.3% of In, 0.2%-0.4% of Y and the balance of Ag. According to the preparation method, alloy component design is optimized, and an optimized preparation method is combined, so that a nano-to-micron Pd-Cr dispersed phase and Y element grain boundary segregation composite strengthened structure is formed through a multi-element synergistic strengthening mechanism, and the problems of In low-melting-point volatilization, columnar crystal length-diameter ratio control, high processing wire breakage rate and the like are solved; the alloy material with excellent comprehensive performance such as hardness, resistivity and machinability is obtained, meanwhile, the preparation cost of the alloy material is reduced, and the alloy material has better adaptability to a test probe subsequently matched with a process chip below 5nm.