3831 results about "Ohm" patented technology

A working end of a surgical instrument that carries first and second jaws for delivering energy to tissue. In a preferred embodiment, at least one jaw of the working end defines a tissue-engagement plane that contacts the targeted tissue. The cross-section of the engagement plane reveals that it defines (i) a first surface conductive portion or a variably resistive matrix of a temperature-sensitive resistive material or a pressure-sensitive resistive material, and (ii) a second surface portion coupled to a fixed resistive material that coupled in series or parallel to a voltage source together with the first portion. In use, the engagement plane will apply active Rf energy to ohmically heat the captured tissue until the point in time that a controller senses an electrical parameter of the tissue such as impedance. Thereafter, the controller switches energy delivery to the second surface portion that is resistively heated to thereby apply energy to tissue by conductive heat transfer.

An electrosurgical generator for supplying RF power to an electrosurgical instrument for cutting or vaporising tissue has an RF output stage (42) with an RF power bridge (Q1, Q2, Q3, Q4), a pair of output lines (74) and a series-resonant output network (48). The output impedance of the output stage (42) at the output lines (74) is less than 200/√P ohms, where P is the maximum continuous RF output power of the generator. The generator offers improved cutting and vaporising performance, especially in relation to the reliability with which an arc can be struck when presented with an initial low impedance load. Overloading of the output stage is prevented by rapidly operating protection circuitry responsive to a predetermined electrical condition such as a substantial short-circuit across the output lines. In the preferred embodiment, the output stage is capable of maintaining output pulses at least 1kW peak by supplying the power bridge from a large reservoir capacitor (60). Pulsing is dynamically variable in response to load conditions by controlling the maximum energy per pulse in response to the reservoir capacitor voltage.

The virtual intelligence shoe with a podiatric analysis system provided with a portable pair of shoe-like body types thereof, into two of which a miniature electronic module and an enclosed sensor mat are permanently embedded in the shoe-like with a mechanical air package enclosing the electronic module to serve as a shock absorption. A miniature electronic module comprises a transmitting circuit with pressure resistance, shoe temperature and warning buzzer for full memory capacity, which receives the variable pressure and temperature voltage signals, convert them into resistance (ohm) and Celsius, respectively. The electrical signals can be emitted in an infrared light signal. An enclosed sensor mat constitutes a thin, flexible, planar, resilient, and dielectric material that arrays seventy-four positions at strategic geometrical pattern to produce the precision of collecting data exerted by a foot or feet continuously and instantaneously in static and dynamic event during the full weight bearing in various activities. The conjunction of a pair of shoe-like body types, a digital foot scanner, a portable infrared light-receiving unit and a central integrator (servers) form a podiatric analysis system for enabling accurate information. An obtained information of each individual can be stored and analyzed for diagnostic means with respect to the foot or feet maladies. The virtual intelligence shoe with a podiatric analysis system is an unconventional, which can ultimately be used by anyone and capable to produce consistent foot or feet information to implement the changes in the foot or feet biomechanics by altering the shoes, orthoses or other modes. In a preferred form, a pair of shoe-like body types is virtually applied to any type of foot or feet maladies and worn daily as if they were conventional shoes under various terrain conditions.

A soft-switched single-phase quasi-single-stage (QSS) bi-directional inverter/charger converts AC-DC or DC-AC. The inverter/charger comprises a push-pull inverter/rectifier on the dc-side, an isolation transformer which provides ohmic isolation and voltage scaling, two full-bridges on the ac side in cascade, a voltage clamp branch comprising a capacitive energy storage element in series with an active switch with its anti-parallel diode, a passive filter at the ac side to smooth out the high frequency switching voltage ripple at the output, and a corresponding PWM scheme to seamlessly control the converter to operate in all four quadrant operation modes in the output voltage and output current plane, and is capable of converting power in both directions.

An F-connector for a coaxial cable comprises a front insulator, a back insulator, a connecting lead, and a locking ring. The connecting lead has an interior portion and an exterior portion. The interior portion is configured with a pair of side wall portions which are parallel to each other, and which together with a bottom portion form a U-shaped channel. The side wall portions each comprise a curved portion that are configured to grip the center conductor of the coaxial cable so as to withstand a certain level of withdrawal force, and such that the F-connector exhibits a desired impedance of 75 Ohms. The connecting lead engages with the front insulator and the back insulator such that the components are held in position within a connector body.

A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10⁶ A/cm² is disclosed. The MTJ has a Co₆₀Fe₂₀B₂₀/MgO/Co₆₀Fe₂₀B₂₀ configuration where the CoFeB AP1 pinned and free layers are amorphous and the crystalline MgO tunnel barrier is formed by a ROX or NOX process. The capping layer preferably is a Hf/Ru composite where the lower Hf layer serves as an excellent oxygen getter material to reduce the magnetic “dead layer” at the free layer/capping layer interface and thereby increase dR/R, and lower He and Jc. The annealing temperature is lowered to about 280° C. to give a smoother CoFeB/MgO interface and a smaller offset field than with a 350° C. annealing. In a second embodiment, the AP1 layer has a CoFeB/CoFe configuration wherein the lower CoFeB layer is amorphous and the upper CoFe layer is crystalline to further improve dR/R and lower RA to ≦10 ohm/μm².

An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.

A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um². The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

A magnetically shielded conductor assembly with a conductor device and a film of nanomagnetic material located above the conductor device. The conductor device has a resistivity of from about 1 to about 2,000 micro ohm-centimeters. The film of nanomagnetic material has a thickness of from about 100 nanometers to about 10 micrometers and a magnetic shielding factor of at least about 0.5. The nanomagnetic material has a mass density of at least about 0.01 grams per cubic centimeter, a saturation magnetization of from about 1 to about 36,000 Gauss, a coercive force of from about 0.01 to about 5,000 Oersteds, a relative magnetic permeability of from about 1 to about 500,000, and an average particle size of less than about 100 nanometers.

The invention relates to a method for manufacturing a semiconductor on insulator type substrate for radiofrequency applications, comprising the following steps in sequence: (a) provision of a silicon substrate (1) with an electrical resistivity of more than 500 Ohm·cm, (b) formation of a polycrystalline silicon layer (4) on said substrate (1), said method comprising a step between steps a) and b) to form a dielectric material layer (5), different from a native oxide layer, on the substrate (1), between 0.5 and 10 nm thick.

A high energy density, high power density capacitor having an energy density of at least about 0.5 J/cm3 is provided. The capacitor comprises a plurality of interleaved metal electrode layers separated by a polymer layer. The interleaved metal electrode layers terminate at opposite ends in a solder termination strip. The high energy density aspect of the capacitors of the invention is achieved by at least one of the following features: (a) the dielectric thickness between the interleaved metal electrode layers is a maximum of about 5 mu m; (b) the polymer is designed with a high dielectric constant kappa of at least about 3.5; (c) the metal electrode layers within the polymer layer are recessed along edges orthogonal to the solder termination strips to prevent arcing between the metal electrode layers at the edges; and (d) the resistivity of the metal electrode layers is within the range of about 10 to 500 ohms per square, or a corresponding thickness of about 200 to 30 ANGSTROM .

An implantable device that contains a power source, a device for producing electrical signals, and a conductor assembly for communicating the electrical signals to biological matter. The conductor assembly contains of a conductor that is capable of being flexed at least about 15 degrees and that has a resistivity at 20 degrees Centigrade of from about 1 to about 100 micro ohm-centimeters. The conductor assembly also contains a magnetic shield located above the flexible conductor; the magnetic shield contains an antithrombogenic composition. The magnetic shield also contains a magnetic shielding material that has a magnetic shielding factor of at least about 0.5.

A high efficiency filtration medium comprised of a nonwoven filter web of electret charged fibers of a nonconductive thermoplastic resin having a resistivity greater than 1014 ohm-cm, preferably polypropylene. The nonwoven filter web has a basis weight (BW) of less than 60 grams/m2, an effective fiber diameter (EFD) of less than 5 microns and a penetration (PEN) of less than 0.03%, wherein the ratio); BW/(EFD.PEN) is greater than 200. The invention filter medium can be easily used in applications requiring HEPA performance at relatively low pressure drops.

A high performance, highly reflective ohmic contact, in the visible spectrum (400 nm–750 nm), has the following multi-layer metal profile. A uniform and thin ohmic contact material is deposited and optionally alloyed to the semiconductor surface. A thick reflector layer selected from a group that includes Al, Cu, Au, Rh, Pd, Ag and any multi-layer combinations is deposited over the ohmic contact material.

A semiconductor apparatus is disclosed. The apparatus includes a first doped volume of semiconductor material, the first doped volume having a front surface and first and second adjacent regions. The first region has a first concentration of dopant and a first exposed area on the front surface. The second region has a second concentration of dopant and a second exposed area on the front surface, the second concentration being higher than the first concentration. The apparatus also includes a first external conductor and an alloy bonding the first external conductor to the second exposed area to ohmically connect the conductor to the second region.

A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.

A passive directional coupler is receptive of VoIP, Internet, and video/data signals, and is used in a CATV amplifier device to couple the video/data signals from a cable drop input port to the input terminal of an amplifier, and to passively bypass the VoIP and Internet signals to a modem port, for insuring continuous connection of the VoIP and Internet signals to the a modem of a user connected to the modem port, regardless of the loss of power to the amplifier or the failure of the amplifier, in one embodiment of the invention. In another embodiment, a switching circuit is responsive to the loss of power to the amplifier, for electrically connecting a 75 ohm resistor between a source of reference potential, and the common connection between the directional coupler and the amplifier, for maintaining a 75 ohm impedance at the directional coupler output to the common connection. In a preferred embodiment, the switching circuit also opens the common connection between the directional coupler and amplifier, upon the loss of power to the amplifier.

An electrochemical microfluidic device has one or a plurality of microstructures, such as a microchannel, in which an electrically conductive means is integrated to reduce the ohmic resistance within the microstructure and hence to improve electrochemical measurements particularly when large current densities are involved. The electrically conductive means can be connected as a counter-electrode and can be used to re-generate the product of the reaction occurring at the working electrode. A method of fabricating electrochemical microfluidic devices comprising such an electrically conductive means is also disclosed. The invention may particularly be used in all electrochemical sensor applications where detection is performed in small volumes.

An interconnect module for an integrated circuit chip incorporates a thin, high dielectric constant embedded capacitor structure to provide reduced power distribution impedance, and thereby promote higher frequency operation. The interconnect module is capable of reliably attaching an integrated circuit chip to a printed wiring board via solder ball connections, while providing reduced power distribution impedance of less than or equal to approximately 0.60 ohms at operating frequencies in excess of 1.0 gigahertz.

A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.