A
wafer having heterostructure therein is formed using a substrate with recesses formed within a
dielectric layer. A magnetized
magnetic layer or a polarized
electret material is formed at the bottom of each recess. The magnetized
magnetic layer or a polarized
electret material provides a predetermined magnetic or electrical
field pattern. A plurality of heterostructures is formed from on an epitaxial
wafer wherein each heterostructure has formed thereon a non-magnetized
magnetic layer that is attracted to the magnetized magnetic layer formed at the bottom of each recess or
dielectric layer that is attracted to the polarized
electret material formed at the bottom of each recess. The plurality of heterostructures is etched from the epitaxial
wafer to form a plurality of heterostructure pills. The plurality of heterostructure pills is slurried over the surface of the
dielectric layer so that individual heterostructure pills can fall into a recess and be retained therein due to the strong short-range magnetic or electrical attractive force between the magnetized magnetic layer in the recess and the non-magnetized magnetic layer on the heterostructure
pill or between the polarized electret material in the recess and the dielectric on the heterostructure
pill. Any excess heterostructure pills that are not retained in a recess formed within the
dielectric layer are removed and an overcoat is applied to form a substantial planar surface.