1873 results about "Magnetic layer" patented technology

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. A magnetic tape cartridge and a magnetic tape apparatus include the magnetic tape. VIVA 0.1, which is a height that is obtained by measuring a surface of the magnetic layer with an atomic force microscope and at which a cross-sectional area is 0.1% with a measurement region area as 100%, is 5 nm or more and 10 nm or less, and standard deviation σ of the VIVA 0.1 in a width direction of the surface of the magnetic layer is 1.0 nm or less.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. A magnetic tape cartridge and a magnetic tape apparatus include the magnetic tape. CS VIVA 0.1, which is a height that is obtained by measuring a surface of the magnetic layer with an atomic force microscope and at which a cutout length is 0.1% with a length of one side of a measurement region as 100%, is 4 nm or more and 10 nm or less, and standard deviation a of the CS VIVA 0.1 in a width direction of the surface of the magnetic layer is 1.0 nm or less.

The present disclosure provides an orbitronic device having orbital Hall effect or inverse orbital Hall effect, and method for enhancing the efficiency thereof. The orbital torque device comprises: a ferromagnetic / non-magnetic heterojunction formed by compounding a ferromagnetic layer and a non-magnetic layer as an orbital current source, wherein the ferromagnetic layer contains a ferromagnetic material, the non-magnetic layer contains a non-magnetic material with weak spin-orbit coupling, the non-magnetic layer is used as an orbital Hall channel to generate orbital current, and the orbital current enters the ferromagnetic layer, so that an orbital torque is generated through an orbital-spin conversion effect of the ferromagnetic layer to realize switching of a magnetic moment. The present disclosure can provide orbitronic device with low cost and good performance.

A printed circuit board includes a substrate with first through-portion; a magnetic layer disposed in at least a portion of the first through-portion and having a second through-portion; an electronic component having at least a portion disposed in the second through-portion; a first wiring pattern disposed on an upper surface of the magnetic layer; a second wiring pattern disposed on a lower surface of the magnetic layer; and a first through-via having at least a portion surrounded by the magnetic layer, and including a first via pattern connecting the first and second wiring patterns to each other.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

The invention provides a track electronic device based on a track Hall effect and a magnetic memory device. The track electronic device comprises a substrate; the ferromagnetic / non-magnetic heterojunction structure is prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track source, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure is made of a 3d-5d metal material and a two-dimensional TMD material, and the ferromagnetic layer structure is an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer. According to the orbital electronics device and the magnetic storage device which are formed on the basis of an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer as a ferromagnetic layer, the orbital torque efficiency can be enhanced, the critical overturning current density is reduced, and the overturning speed is increased.

A magnetic recording medium is a magnetic recording medium having a tape shape and includes a substrate, an underlayer provided on the substrate, and a magnetic layer provided on the underlayer. The magnetic layer has a surface having an uneven shape, a height range ΔH obtained from statistical information of a height of the uneven shape is in a range of 4.00 nm≤ΔH≤10.00 nm, and a gradient range ΔA obtained from statistical information of a gradient of the uneven shape is in a range of 2.50 degrees≤ΔA.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. A magnetic tape cartridge and a magnetic tape apparatus include the magnetic tape. A core void volume Vvc specified in international organization for standardization (ISO) 25178 on a surface of the magnetic layer is 1.200 nm3 or more and 3.000 nm3 or less, and standard deviation a of the Vvc in a width direction of the surface of the magnetic layer is 0.120 nm3 or less.

The present invention discloses a two-dimensional differential Hall chip, a sensor element and a magnetic field measurement method thereof, wherein the two-dimensional differential Hall chip comprises: two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrating layer located on the two groups of Hall pair chips; each group of Hall pair chips comprises two Hall chips distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction; the projection of the single magnetic concentrating layer on the Hall sensitive surface of the two groups of Hall pair chips covers the central area of ​​the two groups of Hall pair chips; the single magnetic concentrating layer covers at least part of the two groups of Hall pair chips, and the single magnetic concentrating layer is symmetrically arranged along the x-axis and the y-axis. The present invention realizes the high sensitivity, zero drift and large tolerance performance of the sensor element; realizes the miniaturization of the sensor element, and simplifies the magnetic field measurement method of the sensor element.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. The ferromagnetic powder is a hexagonal ferrite powder, tilt cos θ of the hexagonal ferrite powder with respect to a surface of the magnetic layer, which is acquired by cross-sectional observation performed using a scanning transmission electron microscope, is 0.85 or more and 1.00 or less, and standard deviation σ of the cos θ in a width direction of the surface of the magnetic layer is 0.03 or less.

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention provides a semiconductor memory device and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the problem of poor anti-magnetic capability of the semiconductor memory device. The semiconductor memory device comprises a magnetic layer, a spin orbit moment layer and a magnetic tunnel junction unit which are stacked in sequence; the free layer in the magnetic tunnel junction unit is adjacent to the spin orbit moment layer; the long axis directions of the magnetic layer and the free layer are parallel to each other, the magnetization directions of the magnetic layer and the free layer in the long axis direction of the magnetic layer are opposite by applying a write current to the spin-orbit moment layer, and the stray field of the semiconductor memory device is adjusted, and the write current has a current component in the short axis direction of the magnetic layer. According to the embodiment of the invention, the magnetic layer can be used for counteracting the stray field weakening anti-magnetic capability and promoting the stray field enhancing anti-magnetic capability, so that the anti-magnetic capability of the semiconductor memory device is improved.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

Disclosed embodiments may include systems, devices and methods for fabricating high-density charge-storage devices and power conversion devices. In one embodiment, a device is disclosed, comprising an inductor. The inductor includes a first inductor surface and a second inductor surface opposite the first inductor surface. The inductor further includes a first inductor substrate including a cavity. A seed layer is formed on a bottom surface of the cavity, and a magnetic layer is formed on the seed layer. The magnetic layer includes a plurality of stacked magnetic layers separated from each other by an insulating material layer.

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fourth magnetic layers, and first to fifth non-magnetic layers. The fourth magnetic layer includes a first element and at least one of Fe, Co or Ni. The first element including at least one selected from the group consisting of Cr, V, Mn, Ti, N and Sc. The fourth non-magnetic layer including at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag. The fifth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.

To provide a magnetic tape which can contribute to increase of the operation stability of a drive in recording and / or reproduction after a long-time storage.SOLUTION: The magnetic tape has a non-magnetic supporting body and a magnetic layer including ferromagnetic powders. The present invention also provides a magnetic tape cartridge and a magnetic tape device including the magnetic tape. The height Spk of a protruding mounting part defined by ISO 25178 in the surface of the magnetic layer is at least 1.5nm and is 3.0nm at largest. The standard deviation σ of the Spk in the width direction of the surface of the magnetic layer is 0.5 nm at largest.SELECTED DRAWING: None

The invention discloses a strong spin-orbit torque metal superlattice thin film material, and belongs to the technical field of new spin electron materials. The superlattice thin film material comprises a thin film system formed by heavy metal layers with strong spin-orbit coupling and light metal layers with high-orbit Hall conductivity, wherein the heavy metal layers periodically grow on a substrate; in each period, the thickness of the heavy metal layer with strong spin-orbit coupling is 1-3nm, and the thickness of the light metal layer with high-orbit Hall conductivity is 1-3nm. Electron orbital angular momentum flow accumulation is generated on the surface of the light metal layer, the orbital current is injected into heavy metal with strong spin-orbit coupling, and the orbital current is converted into spin current by utilizing the strong spin-orbit coupling characteristic of the heavy metal layer. Therefore, the spin current generation efficiency of the strong spin orbit torque metal superlattice thin film material can be improved, and the giant damping spin orbit torque efficiency and the low-current-density turnover ferromagnetic layer magnetic moment are realized.

A magnetic recording medium includes a substrate, an underlayer, a first magnetic layer, and a second magnetic layer in this order. The first magnetic layer includes magnetic grains having a L10 structure, and the second magnetic layer has a granular structure including magnetic grains having a L10 structure, and a grain boundary portion including hexagonal boron nitride. A (111) plane of the magnetic grains included in the first magnetic layer is covered with boron nitride at an interface with the second magnetic layer. The magnetic grains included in the second magnetic layer are epitaxially grown from a (001) plane of the magnetic grains included in the first magnetic layer. The magnetic grains included in the first magnetic layer and the magnetic grains included in the second magnetic layer are columnar crystals penetrating the first magnetic layer and the second magnetic layer, respectively.

A main object of the present technology is to improve the reliability of a magnetic recording tape by controlling the distribution of the binder in the underlayer.The present technology provides a magnetic recording medium including a magnetic layer, an underlayer, and a base layer in this order, the underlayer containing a chlorine-containing binder, the underlayer including a part having a thickness of 130 nm or less, the part having a chlorine count equal to or more than a threshold described below:[T⁢hreshold]=[⁠an⁢ average⁢ chlorine⁢ count⁢ in⁢ the⁢ underlayer]+6×[a⁢ standard⁢ deviation⁢ determined⁢ in⁢ calculation⁢ of⁢ the⁢ average⁢ chlorine⁢ count].Furthermore, the present technology also provides a magnetic recording medium including a magnetic layer, an underlayer, and a base layer in this order, the underlayer containing a chlorine-containing binder, the underlayer including a part having a thickness of 12% or less of a thickness of the underlayer, the part having a chlorine count equal to or more than the above-described threshold.

A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):Co2FeαXβ  (1)(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5≤α<1.9).

The invention provides a method for measuring magneton dispersion of an antiferromagnetic thin film material based on a terahertz spectrum. According to the method, a ferromagnetic metal layer sample, an antiferromagnetic layer sample, a heavy metal layer sample and a three-layer film structure sample are prepared, laser pulses are used for inducing the samples to emit terahertz spectra, an electro-optical sampling technology is combined for measurement, and contribution of magneton transmission to the terahertz spectra is separated through data processing. The invention aims to solve the problem that the magneton dispersion property of an antiferromagnetic thin film material cannot be measured in real time at low cost in the prior art. Compared with a traditional method, the method has the advantages of being wide in frequency spectrum range, high in wave number resolution ratio, free of contact and low in cost, and is suitable for different types of antiferromagnetic materials. The method provides a theoretical basis and an experimental basis for researching the spin dynamic characteristics of an antiferromagnetic material and developing a high-frequency spintronics device. The method effectively fills the technical blank in the field of magneton measurement of the antiferromagnetic material.

The invention relates to a semiconductor structure, a preparation method thereof and a magnetic tunnel junction sensor. The semiconductor structure comprises a substrate, and a buffer layer, a solid magnetic layer, a tunnel barrier layer, a free layer and a protective layer which are located on the substrate. The solid magnetic layer comprises an antiferromagnetic pinning layer and a reference layer which are stacked, the antiferromagnetic pinning layer is located on the top surface of the buffer layer, and the magnetization direction of the reference layer is pinned by the antiferromagnetic pinning layer; the tunnel barrier layer is located on the top surface of the reference layer; the free layer is located on the top surface of the tunnel barrier layer, the thickness of the free layer in the direction perpendicular to the substrate continuously and smoothly changes in the preset direction, the thickness value distribution of the free layer conforms to a preset gradient function, and a preset included angle is formed between the preset direction and the pinned magnetization direction of the reference layer; the protective layer is on the top surface of the free layer. Multi-range or continuous wide-range detection can be realized in a single-chip semiconductor device, and high sensitivity is realized.

An optical sensor includes a wavelength filter configured to transmit light in a specific wavelength range and a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The light passing through the wavelength filter is applied to the magnetic element and the light applied to the magnetic element is detected.

The invention discloses a spin orbit moment magnetic tunnel junction, a majority gate spin logic device and cascade of the majority gate spin logic device, and the magnetic tunnel junction comprises an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetization free layer and an abnormal spin orbit moment layer which are sequentially stacked from top to bottom, the artificial antiferromagnetic reference layer comprises a first ferromagnetic layer, a non-magnetic spacer layer and a second ferromagnetic layer which are sequentially stacked from top to bottom, and the first ferromagnetic layer has vertical magnetization with a fixed direction; the electrode layer in contact with the first ferromagnetic layer has in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, and the magnetic free layer has vertical magnetization with variable direction; and the abnormal spin-orbit moment layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect, so that the magnetization of the magnetic free layer is overturned, the resistance state of the spin-orbit moment magnetic tunnel junction is changed, and a logic function is realized.

The invention discloses a positioning electromagnetic magnetic needle device based on permanent magnet bias and application thereof, and relates to the technical field of chip mass transfer, the positioning electromagnetic magnetic needle device comprises a magnetic field generation system and a chip transfer system, the magnetic field generation system comprises permanent magnet steel, an electrified solenoid coil, a magnetic conductive layer and a magnetic conductive magnetic needle, the electrified solenoid coil surrounds the periphery of the permanent magnet steel, and the magnetic conductive layer is arranged on the periphery of the chip transfer system; the magnetic conductive layer is arranged on the upper surface of the permanent magnet steel, the magnetic conductive magnetic needles are uniformly distributed on the upper surface of the magnetic conductive layer in an array manner, the chip transfer system comprises a chip transfer substrate and a plurality of LED light-emitting chips, a plurality of welding spots are arranged on the transfer substrate and correspond to the magnetic conductive magnetic needles, and the LED light-emitting chips are provided with N-type nickel-plated electrode pins and P-type electrode pins. According to the positioning electromagnetic magnetic needle device based on permanent magnet bias and the application of the positioning electromagnetic magnetic needle device, the magnetic induction density of the magnetic conductive magnetic needle is accurately regulated and controlled by means of the magnetic field which is generated by the electrified solenoid coil and is opposite to the permanent magnetic field, and accurate fixing of a chip at a welding spot position of a transfer substrate is achieved.

The invention provides a magnetic memory, a magnetic memory unit and a magnetic memory system. The magnetic memory at least comprises a first antiferromagnetic layer, a free layer, a barrier layer, a reference layer and a second antiferromagnetic layer which are sequentially stacked from bottom to top, wherein the magnetic moment direction of the reference layer is a first direction, the magnetic moment direction of the free layer is a second direction, and the first direction is perpendicular to the second direction; when the magnetic memory is in a first mode, applying a current parallel to a second direction to the first antiferromagnetic layer, so that the magnetic moment direction of the free layer is changed from the second direction to a direction parallel to the first direction, and the magnetic memory is switched from the first mode to the second mode; the first mode is used for detecting a magnetic field around the magnetic memory; the second mode is used for data storage. Therefore, the magnetic memory can be switched from the sensing mode to the storage mode, and the occupied space and cost can be saved at the same time.

The invention discloses a broadband electromagnetic shielding coating and a preparation method thereof, and relates to the technical field of electromagnetic shielding. The broadband electromagnetic shielding coating comprises a first conductive layer, a magnetic conductive layer and a second conductive layer; the magnetic conductive layer is located between the first conductive layer and the second conductive layer. Through the three-layer structure, electromagnetic waves can be attenuated layer by layer, so that propagation of the electromagnetic waves is blocked, and the magnetic conductive layer located in the middle can improve the shielding effect of the material on the electromagnetic waves at low frequency through high magnetic conductivity.

The invention discloses a vertical exchange bias structure and a preparation method thereof, and belongs to the technical field of information technology and spintronics, the preparation method of the vertical exchange bias structure comprises the following steps: fixing a substrate on a substrate table of a vacuum sputtering chamber, adjusting the vacuum degree, and sputtering a buffer layer on the upper surface of the substrate; sequentially sputtering a seed layer, a magnetic layer, an interface magnetic layer, an antiferromagnetic layer and a protective layer on the upper surface of the buffer layer to obtain the vertical exchange bias structure; the interface magnetic layer is Pt / CoFe, the period is 1, the sputtering power of the CoFe layer is 10W, and the sputtering air pressure is 0.7 Pa. According to the method, the exchange bias effect of the magnetic film is regulated and controlled by changing the characteristics and growth conditions of the interface magnetic layer, the overall magnetism of the magnetic layer is kept unchanged, and the method has important guiding significance for designing the structures of magnetic materials and devices.

According to one embodiment, a magnetic head includes a reproducing section. The reproducing section includes a first shield, a second shield, a third shield, a fourth shield, a first magnetic layer, a first intermediate layer, and a second intermediate layer. A second direction from the third shield to the fourth shield crosses a first direction from the first shield to the second shield. The first magnetic layer is provided between the first shield and the second shield and between the third shield and the fourth shield. The first intermediate layer is provided between the first shield and the first magnetic layer, and is nonmagnetic. The second intermediate layer is provided between the first magnetic layer and the second shield, and is nonmagnetic. The second intermediate layer length of the second intermediate layer is shorter than a first intermediate layer length of the first intermediate layer along the second direction.