799 results about "Magnetic layer" patented technology

The present disclosure provides an orbitronic device having orbital Hall effect or inverse orbital Hall effect, and method for enhancing the efficiency thereof. The orbital torque device comprises: a ferromagnetic / non-magnetic heterojunction formed by compounding a ferromagnetic layer and a non-magnetic layer as an orbital current source, wherein the ferromagnetic layer contains a ferromagnetic material, the non-magnetic layer contains a non-magnetic material with weak spin-orbit coupling, the non-magnetic layer is used as an orbital Hall channel to generate orbital current, and the orbital current enters the ferromagnetic layer, so that an orbital torque is generated through an orbital-spin conversion effect of the ferromagnetic layer to realize switching of a magnetic moment. The present disclosure can provide orbitronic device with low cost and good performance.

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

A main object of the present technology is to improve the reliability of a magnetic recording tape by controlling the distribution of the binder in the underlayer.The present technology provides a magnetic recording medium including a magnetic layer, an underlayer, and a base layer in this order, the underlayer containing a chlorine-containing binder, the underlayer including a part having a thickness of 130 nm or less, the part having a chlorine count equal to or more than a threshold described below:[T⁢hreshold]=[⁠an⁢ average⁢ chlorine⁢ count⁢ in⁢ the⁢ underlayer]+6×[a⁢ standard⁢ deviation⁢ determined⁢ in⁢ calculation⁢ of⁢ the⁢ average⁢ chlorine⁢ count].Furthermore, the present technology also provides a magnetic recording medium including a magnetic layer, an underlayer, and a base layer in this order, the underlayer containing a chlorine-containing binder, the underlayer including a part having a thickness of 12% or less of a thickness of the underlayer, the part having a chlorine count equal to or more than the above-described threshold.

The invention relates to a semiconductor structure, a preparation method thereof and a magnetic tunnel junction sensor. The semiconductor structure comprises a substrate, and a buffer layer, a solid magnetic layer, a tunnel barrier layer, a free layer and a protective layer which are located on the substrate. The solid magnetic layer comprises an antiferromagnetic pinning layer and a reference layer which are stacked, the antiferromagnetic pinning layer is located on the top surface of the buffer layer, and the magnetization direction of the reference layer is pinned by the antiferromagnetic pinning layer; the tunnel barrier layer is located on the top surface of the reference layer; the free layer is located on the top surface of the tunnel barrier layer, the thickness of the free layer in the direction perpendicular to the substrate continuously and smoothly changes in the preset direction, the thickness value distribution of the free layer conforms to a preset gradient function, and a preset included angle is formed between the preset direction and the pinned magnetization direction of the reference layer; the protective layer is on the top surface of the free layer. Multi-range or continuous wide-range detection can be realized in a single-chip semiconductor device, and high sensitivity is realized.

The invention provides a magnetic memory, a magnetic memory unit and a magnetic memory system. The magnetic memory at least comprises a first antiferromagnetic layer, a free layer, a barrier layer, a reference layer and a second antiferromagnetic layer which are sequentially stacked from bottom to top, wherein the magnetic moment direction of the reference layer is a first direction, the magnetic moment direction of the free layer is a second direction, and the first direction is perpendicular to the second direction; when the magnetic memory is in a first mode, applying a current parallel to a second direction to the first antiferromagnetic layer, so that the magnetic moment direction of the free layer is changed from the second direction to a direction parallel to the first direction, and the magnetic memory is switched from the first mode to the second mode; the first mode is used for detecting a magnetic field around the magnetic memory; the second mode is used for data storage. Therefore, the magnetic memory can be switched from the sensing mode to the storage mode, and the occupied space and cost can be saved at the same time.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

The invention relates to a multi-mode cooperative flexible tactile buffer sensor for drone inhabitation, and belongs to the technical field of tactile sensors, the sensor comprises a support, a Hall sensor, an elastic layer, a first magnetic layer, a piezoelectric layer and a protective cover, the top end of the first magnetic layer is bonded to the bottom end of the elastic layer, when an inhabiting drone inhabits and bears force, the piezoelectric layer is attached to the bottom end of the elastic layer, and the piezoelectric layer is attached to the bottom end of the first magnetic layer; the shape of the elastic layer is rapidly changed, the distance between the Hall sensor and the first magnetic layer is adjusted, correspondingly, the intensity of the magnetic field sensed by the Hall sensor also changes, and the inhabiting stress of the inhabiting unmanned aerial vehicle can be calculated according to the change of the magnetic field intensity; then the top end of the piezoelectric layer is bonded to the bottom end of the first magnetic layer, when the inhabiting unmanned aerial vehicle is stressed in motion, the piezoelectric layer generates elastic deformation and generates current, and the motion stress of the inhabiting unmanned aerial vehicle is calculated, so that various states of inhabiting, landing, collision, sliding, falling, shaking and the like of the inhabiting unmanned aerial vehicle are detected at the same time; and closed-loop feedback is provided for self-adaptive inhabitation of the inhabiting unmanned aerial vehicle.

A multilayer coil and a multilayer coil array, each including a body in which a magnetic layer is laminated, a first coil including a plurality of first coil conductor layers in a lamination direction, and a second coil including a plurality of second coil conductor layers in the lamination direction. The first and second coils are inside the body, first and second external electrodes are electrically connected to the first coil, and third and fourth external electrodes are electrically connected to the second coil. The first to fourth external electrodes are on a bottom surface of the body, the second coil is at a position farther from the bottom surface of the body than the first coil is in the lamination direction, and the multilayer coil includes a first extended conductor inside the body and connecting an end of a first coil conductor layer closest to the bottom surface.

A magnetoresistive random-access memory cell includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

A magnetic sensor element includes a pinned layer, a first non-magnetic layer, a first magnetic layer, and a free layer. The pinned layer has a fixed magnetization direction. The first non-magnetic layer is laminated on the pinned layer. The first magnetic layer holds the first non-magnetic layer with the pinned layer. The free layer is disposed along a lamination direction in which the first non-magnetic layer is laminated on the pinned layer. Each of the first magnetic layer and the free layer has a magnetization direction more easily changed by an external magnetic field than that of the pinned layer. The pinned layer and the first magnetic layer are coupled by indirect exchange interaction.

The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.

The invention discloses a magnetic electronic device for generating track torque by using a metal vanadium or titanium track Hall effect and a manufacturing method thereof. The device comprises a substrate, a track Hall structure containing a vanadium or titanium layer, and a heavy metal layer and a ferromagnetic layer which are adjacent to the track Hall structure, when a charge current passes through the vanadium or titanium layer, a transverse track current is generated based on the track Hall effect, and the track current is injected into the ferromagnetic layer and then converted into an effective track torque for controlling the magnetization state of the ferromagnetic layer. Preferably, the ferromagnetic layer has a perpendicular magnetic anisotropy. According to the invention, the light transition metal vanadium or titanium is used as the track Hall material, the experiment proves that a huge track Hall angle greater than 0.45 can be obtained, and meanwhile, the resistivity of the material is lower, so that the shunting phenomenon can be reduced in an actual device, and the critical current density for realizing write-in flipping can be obviously reduced. The device is simple in structure and compatible with an existing semiconductor process, and a brand new material platform is provided for developing a low-power-consumption and high-density magnetic random access memory (MRAM).

An inductor includes a first wire adjacent to a second wire and separated by an interval; a first magnetic layer having first and second surfaces separated from each other by an interval, and an inner peripheral surface in contact with an outer peripheral surface of the first and second wires between the first and second surfaces; a second magnetic layer disposed on the first surface; and a third magnetic layer disposed on the second surface. The second magnetic layer has a third surface facing and separated from the first surface by an interval in the thickness direction. The relative permeability of each of the second and third magnetic layers is higher than that of the first magnetic layer. The inductor includes a suppression portion located between the first and second wires which suppresses the magnetic coupling between the first and second wires.

The invention provides a magnetic superconducting memory and a preparation method and a read-write method thereof. According to the magnetic superconducting memory, the superconducting layer maps the magnetization state by using the resistance difference between the superconducting state and the normal state; the ferromagnetic layer serves as a free layer capable of adjusting magnetization, and the magnitude of superconductive critical current of the superconductive layer is influenced through the magnetization direction. The heavy metal layer generates spin orbit torque through a spin Hall effect to drive the ferromagnetic layer to be magnetized and overturned; an infinite switching ratio between a superconducting state and a normal state is realized through a superconducting diode magnetoresistance effect, a high-efficiency and high-reliability nonvolatile storage scheme is realized in combination with a current-driven spin-orbit torque magnetization overturning technology, inherent defects of a traditional TMR are thoroughly overcome, and the signal contrast of a storage unit is remarkably improved; the heterostructure designed by the invention replaces a traditional magnetic tunnel junction, reduces material stacking and process complexity, and adopts a material compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process to promote large-scale integration of the low-temperature memory.

The invention discloses an elastic support liquid magnetic composite bearing journal bearing which comprises a bearing bush, a base body arranged on the outer side of the circumference of the bearing bush and a support layer arranged between the base body and the bearing bush, the bearing bush comprises a first permanent magnet layer and a lining layer arranged between the first permanent magnet layer and a journal, the lining layer is provided with a liquid film, the liquid film is arranged between the lining layer and the journal, and the first permanent magnet layer is arranged on the lining layer. The first permanent magnet layer comprises a permanent magnet and a protective shell thereof; a second permanent magnet layer is further arranged on the inner side of the circumference of the liquid film, and the supporting layer comprises an elastic layer arranged between the bearing bush and the base body; the elastic layer comprises elastic elements; according to the bearing, the liquid film is arranged between the lining layer and the shaft neck, and the permanent magnets are arranged in the first permanent magnet layer and the second permanent magnet layer, so that a dynamic complementary mechanism of liquid film dynamic pressure and magnetic suspension force is formed, and the comprehensive bearing capacity is improved.

The invention provides a GMR magnetic sensor array and a preparation method thereof, and relates to the technical field of magnetic sensors. Compared with the prior art, the preparation method provided by the invention has the advantages that the GMR multilayer film is adopted in the aspect of materials, so that the GMR magnetic sensor array still has an excellent magnetoresistance effect under a large strain condition; the structural integrity, uniformity and chemical stability are ensured by optimizing a spin-coating process, an accurate patterning process and a lossless transfer process of the water-soluble sacrificial layer in the process aspect; the flexible packaging layer in the GMR magnetic sensor array isolates the interference of the external environment and reduces the influence of stress on the magnetic layer at the same time; the excellent performance of GMR performance and the stability of sensitivity, resistance and giant magnetoresistance of the GMR magnetic sensor array under the omnidirectional large strain tensile condition are finally achieved through collaborative optimization of the three aspects of material, process and structure. The problems that an existing magnetic sensor array is poor in GMR performance and insufficient in stability under the omni-directional large strain condition are solved.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. A rate of change in an area ratio of a protrusion having a height of 5 nm or more and 10 nm or less, which is obtained by measuring a measurement region of 5 μm×5 μm on a surface of the magnetic layer before and after 1000 reciprocating slides with respect to an LTO 8 head at a head tilt angle of 15° in an environment of a temperature of 35° C. and a relative humidity of 80%, with an atomic force microscope, is 10.0% or less.

The inductor (1) includes wiring (2) and a magnetic layer (3) covering the wiring (2). The wiring (2) includes conductors (6) and an insulating layer (7) covering the conductors (6). The magnetic layer (3) contains magnetic particles and an adhesive (9). In the peripheral region (4) of the wiring (2), the filling rate of the magnetic particles is 40% by volume or more. The peripheral region (4) is the area in the magnetic layer (3) that, when viewed in section, extends outward from the outer peripheral surface of the wiring (2) by a value equivalent to 1.5 times the average of the longest and shortest lengths from the centroid (C) of the wiring (2) to the outer surface of the wiring (2).

The invention discloses a magnet vane for a magnetomotive generator set and a preparation method of the magnet vane, belongs to the technical field of magnet vanes, and aims to solve the problems that an existing magnet vane is prone to generating large eddy-current loss, and stress on the inner side and the outer side is unbalanced due to the fact that the layers of the novel magnet vane are arranged to be horizontal planes. Through the multi-layer composite structure of the supporting layer, the magnetic conductive layer and the diamagnetic layer, the total magnetic conductivity can be increased, an effective impedance matching interface can be formed, and through the arrangement of the inclined plane, the cooperation with the nanometer glue for bonding, the stress distribution and the laminating effect of the lamination are optimized, so that the lamination quality is improved. The wave-absorbing film is formed by compounding nanoscale magnetic particles and light organic polymers, the wave-absorbing performance is guaranteed, the weight of the magnetism isolating plate is greatly reduced, the requirement for light weight of electronic equipment is met, magnetic through holes are formed in the periphery of the magnetism isolating plate in a circular array mode, the forming area of the magnetic through holes is in a kidney shape and is increased from inside to outside, and the magnetic through holes are formed in the periphery of the magnetism isolating plate in a circular array mode. The magnetic through holes have ventilation and heat dissipation functions and directionally guide a magnetic field at the same time, and energy waste is reduced.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The application discloses a magnetoelectric heterojunction film and a preparation method thereof. The magnetoelectric heterojunction film comprises a strontium titanate base layer, a strontium ruthenate electrode layer, a bismuth ferrite ferroelectric material layer and a SmCo-based ferromagnetic material layer which are stacked in sequence. The magnetoelectric heterojunction film has the multi-ferroelectric layer room-temperature magnetoelectric coupling effect and the excellent magnetic performance of the ferromagnetic layer, and the magnetoelectric coupling effect of the heterojunction film can be enhanced through the strong exchange bias effect at the interface.

A magnetic recording medium includes a substrate, an underlayer, a first magnetic layer, and a second magnetic layer in this order. The first magnetic layer includes magnetic grains having a L10 structure, and the second magnetic layer has a granular structure including magnetic grains having a L10 structure, and a grain boundary portion including hexagonal boron nitride. A (111) plane of the magnetic grains included in the first magnetic layer is covered with boron nitride at an interface with the second magnetic layer. The magnetic grains included in the second magnetic layer are epitaxially grown from a (001) plane of the magnetic grains included in the first magnetic layer. The magnetic grains included in the first magnetic layer and the magnetic grains included in the second magnetic layer are columnar crystals penetrating the first magnetic layer and the second magnetic layer, respectively.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

A manufacturing method for a magneto resistive sensor includes a first magnetization step for magnetizing a first area of an antiferromagnetic layer by applying a magnetic field in a first magnetization direction and irradiating the first area with a laser beam, and a second magnetization step for magnetizing a second area of the antiferromagnetic layer, the second area not overlapping the first area, after the first magnetization step by applying a magnetic field in a second magnetization direction that differs from the first magnetization direction and irradiating the second area with the laser beam.

A magnetic recording medium includes a nonmagnetic substrate, an underlayer disposed above the nonmagnetic substrate, and a magnetic recording layer disposed above the underlayer. The magnetic recording layer includes a first magnetic layer disposed above the underlayer, and a second magnetic layer disposed above the first magnetic layer. Each of the first magnetic layer and the second magnetic layer has a granular structure including magnetic grains having a L10 structure and a grain boundary portion. The grain boundary portion of the first magnetic layer includes aluminum nitride, and the grain boundary portion of the second magnetic layer includes hexagonal boron nitride. An aluminum nitride content in the first magnetic layer is in a range of 15 vol % to 35 vol %, and a peak in a B1s spectrum of the grain boundary portion of the second magnetic layer observed using X-ray photoelectron spectroscopy is 191.6 eV or less.

The present application relates, for example, to substrates for surface enhanced Raman spectroscopy (SERS), to methods for their preparation and to uses of such SERS substrates in methods for the detection of an analyte in a sample. The SERS substrates of the present application comprise a support material, a layer of a SERS-active metal on the support material, and a layer of magnetically active nanoparticles on the layer of the SERS-active metal. The methods of preparing such SERS substrates comprise depositing a layer of a SERS-active metal on a support material, and depositing a layer of magnetically active nanoparticles on the layer of the SERS-active metal.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.