459 results about "Magnetic layer" patented technology

The invention relates to a semiconductor structure, a preparation method thereof and a magnetic tunnel junction sensor. The semiconductor structure comprises a substrate, and a buffer layer, a solid magnetic layer, a tunnel barrier layer, a free layer and a protective layer which are located on the substrate. The solid magnetic layer comprises an antiferromagnetic pinning layer and a reference layer which are stacked, the antiferromagnetic pinning layer is located on the top surface of the buffer layer, and the magnetization direction of the reference layer is pinned by the antiferromagnetic pinning layer; the tunnel barrier layer is located on the top surface of the reference layer; the free layer is located on the top surface of the tunnel barrier layer, the thickness of the free layer in the direction perpendicular to the substrate continuously and smoothly changes in the preset direction, the thickness value distribution of the free layer conforms to a preset gradient function, and a preset included angle is formed between the preset direction and the pinned magnetization direction of the reference layer; the protective layer is on the top surface of the free layer. Multi-range or continuous wide-range detection can be realized in a single-chip semiconductor device, and high sensitivity is realized.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.

The invention discloses a magnetic electronic device for generating track torque by using a metal vanadium or titanium track Hall effect and a manufacturing method thereof. The device comprises a substrate, a track Hall structure containing a vanadium or titanium layer, and a heavy metal layer and a ferromagnetic layer which are adjacent to the track Hall structure, when a charge current passes through the vanadium or titanium layer, a transverse track current is generated based on the track Hall effect, and the track current is injected into the ferromagnetic layer and then converted into an effective track torque for controlling the magnetization state of the ferromagnetic layer. Preferably, the ferromagnetic layer has a perpendicular magnetic anisotropy. According to the invention, the light transition metal vanadium or titanium is used as the track Hall material, the experiment proves that a huge track Hall angle greater than 0.45 can be obtained, and meanwhile, the resistivity of the material is lower, so that the shunting phenomenon can be reduced in an actual device, and the critical current density for realizing write-in flipping can be obviously reduced. The device is simple in structure and compatible with an existing semiconductor process, and a brand new material platform is provided for developing a low-power-consumption and high-density magnetic random access memory (MRAM).

An inductor includes a first wire adjacent to a second wire and separated by an interval; a first magnetic layer having first and second surfaces separated from each other by an interval, and an inner peripheral surface in contact with an outer peripheral surface of the first and second wires between the first and second surfaces; a second magnetic layer disposed on the first surface; and a third magnetic layer disposed on the second surface. The second magnetic layer has a third surface facing and separated from the first surface by an interval in the thickness direction. The relative permeability of each of the second and third magnetic layers is higher than that of the first magnetic layer. The inductor includes a suppression portion located between the first and second wires which suppresses the magnetic coupling between the first and second wires.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. A rate of change in an area ratio of a protrusion having a height of 5 nm or more and 10 nm or less, which is obtained by measuring a measurement region of 5 μm×5 μm on a surface of the magnetic layer before and after 1000 reciprocating slides with respect to an LTO 8 head at a head tilt angle of 15° in an environment of a temperature of 35° C. and a relative humidity of 80%, with an atomic force microscope, is 10.0% or less.

The invention discloses a magnet vane for a magnetomotive generator set and a preparation method of the magnet vane, belongs to the technical field of magnet vanes, and aims to solve the problems that an existing magnet vane is prone to generating large eddy-current loss, and stress on the inner side and the outer side is unbalanced due to the fact that the layers of the novel magnet vane are arranged to be horizontal planes. Through the multi-layer composite structure of the supporting layer, the magnetic conductive layer and the diamagnetic layer, the total magnetic conductivity can be increased, an effective impedance matching interface can be formed, and through the arrangement of the inclined plane, the cooperation with the nanometer glue for bonding, the stress distribution and the laminating effect of the lamination are optimized, so that the lamination quality is improved. The wave-absorbing film is formed by compounding nanoscale magnetic particles and light organic polymers, the wave-absorbing performance is guaranteed, the weight of the magnetism isolating plate is greatly reduced, the requirement for light weight of electronic equipment is met, magnetic through holes are formed in the periphery of the magnetism isolating plate in a circular array mode, the forming area of the magnetic through holes is in a kidney shape and is increased from inside to outside, and the magnetic through holes are formed in the periphery of the magnetism isolating plate in a circular array mode. The magnetic through holes have ventilation and heat dissipation functions and directionally guide a magnetic field at the same time, and energy waste is reduced.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

The application discloses a magnetoelectric heterojunction film and a preparation method thereof. The magnetoelectric heterojunction film comprises a strontium titanate base layer, a strontium ruthenate electrode layer, a bismuth ferrite ferroelectric material layer and a SmCo-based ferromagnetic material layer which are stacked in sequence. The magnetoelectric heterojunction film has the multi-ferroelectric layer room-temperature magnetoelectric coupling effect and the excellent magnetic performance of the ferromagnetic layer, and the magnetoelectric coupling effect of the heterojunction film can be enhanced through the strong exchange bias effect at the interface.

A magnetic recording medium includes a nonmagnetic substrate, an underlayer disposed above the nonmagnetic substrate, and a magnetic recording layer disposed above the underlayer. The magnetic recording layer includes a first magnetic layer disposed above the underlayer, and a second magnetic layer disposed above the first magnetic layer. Each of the first magnetic layer and the second magnetic layer has a granular structure including magnetic grains having a L10 structure and a grain boundary portion. The grain boundary portion of the first magnetic layer includes aluminum nitride, and the grain boundary portion of the second magnetic layer includes hexagonal boron nitride. An aluminum nitride content in the first magnetic layer is in a range of 15 vol % to 35 vol %, and a peak in a B1s spectrum of the grain boundary portion of the second magnetic layer observed using X-ray photoelectron spectroscopy is 191.6 eV or less.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

The invention relates to the technical field of nuclear facility pipeline heating. The invention provides a pipeline heating device and an in-reactor test facility. The pipeline heating device comprises a magnetic conduction layer, a heat conduction layer, a heat preservation layer and an electromagnetic induction coil, the magnetic conduction layer is made of a magnetic alloy material, and the magnetic conduction layer is enclosed and internally forms a heating area used for containing a pipeline; the heat conduction layer is located on the side, facing the heating area, of the magnetic conduction layer and used for transmitting heat of the magnetic conduction layer to the pipeline. The heat preservation layer wraps the side, away from the heating area, of the magnetic conduction layer. The electromagnetic induction coil is wound around the side, away from the heating area, of the heat preservation layer. The magnetic conductive layer made of the magnetic alloy material serves as a main absorption and conversion carrier of magnetic field energy, the eddy current effect can be remarkably enhanced, the problem that the heating efficiency is insufficient due to low magnetic conductivity of the austenitic stainless steel pipeline is solved, and the heating efficiency is greatly improved. The arrangement of the magnetic conductive layer can fundamentally avoid material microscopic damage caused by direct action of a magnetic field, and the safety is higher.

The magnetic tape includes: a non-magnetic support; and a magnetic layer containing a ferromagnetic powder, in which a contact angle with water, which is measured on a surface of the magnetic layer, is 95° or more and 105° or less, and standard deviation σ of the contact angle in a width direction of the surface of the magnetic layer is 1.0° or less.

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

Provided is a magnetic recording medium comprising a non-magnetic support and a magnetic layer containing ferromagnetic powder, and further comprising a non-magnetic layer containing non-magnetic powder between the non-magnetic support and the magnetic layer. The average pore diameter of the magnetic layer and the non-magnetic layer is 30.0 nm or less, and the standard deviation of the pore diameter distribution of the magnetic layer and the non-magnetic layer is 30.0 nm or less.

A coil component is provided with: a body including a magnetic layer; and a first coil wiring disposed in the body. The magnetic layer includes a resin, a first metal magnetic powder, a first iron oxide magnetic powder, and a void portion, and the average particle diameter of the first metal magnetic powder is larger than the average particle diameter of the first iron oxide magnetic powder.

A multilayer inductor and a multilayer inductor array in which the element area is reduced and the direct current superposition characteristics are further improved. A multilayer inductor includes an element body in which magnetic layers are stacked and that has a bottom surface having a rectangular shape, first, second, third and fourth outer electrodes respectively at four corners of the bottom surface of the element body, a first winding portion in which a plurality of conductor layers in the element body are connected in a stacking direction and that has a winding axis in the stacking direction, and a second winding portion that is above the first winding portion in the stacking direction, in which conductor layers in the element body are connected in the stacking direction and that has the winding axis in the stacking direction.

A layered structure includes a non-magnetic layer, an upper soft magnetic layer, a lower soft magnetic layer, and a coupling soft magnetic layer. The upper soft magnetic layer is in contact with atop surface of the non-magnetic layer. The lower soft magnetic layer is in contact with a bottom surface of the non-magnetic layer. The coupling soft magnetic layer is coupled to the upper soft magnetic layer and the lower soft magnetic layer. The coupling soft magnetic layer is in contact with a first side surface and a second side surface of the non-magnetic layer. The first side surface and the second side surface are spaced from each other.

The application discloses a tunneling magnetoresistance film structure and a magnetic sensitive sensor. The tunneling magnetoresistance film structure comprises a substrate and a cover layer, the substrate is located at the bottom of the tunneling magnetoresistance film, and the cover layer is located at the top of the tunneling magnetoresistance film; a top pinning layer is located between the substrate and the cover layer and is close to the cover layer; a composite free layer is located on one side of the top pinning layer close to the substrate; in the direction of the substrate pointing to the cover layer, the composite free layer comprises an intrinsic free layer and a first sub-composite layer which are arranged in a stack, wherein the first sub-composite layer comprises a first soft magnetic layer, a first amorphous layer and a second soft magnetic layer which are arranged in a stack. The application improves the surface condition of the composite free layer and improves the growth quality of the top pinning layer.

In an aspect of the present invention, a new active optic is provided, namely, a photo-magnetically actuated deformable mirror (PMADM) made of a magnetic composite structure and an optical quality substrate layer. The magnetic layer is composed of Polydimethylsiloxane (PDMS) and powdered ferromagnetic CrO2. A magnet may be used to deform the mirror surface. The powdered CrO2 has a low Curie temperature (preferably around 395 K) which allows changing the magnetization of the magnetic layer using a laser heating source, thus providing control over the deformation. In one embodiment, the structure has an overall dimension of 1.2 inch 1.2 inch 175 μm with an optical pupil diameter of 8 mm. The PMADM is estimated to deform to a maximum stroke of 8.7731 μm before failure with a 3 safety factor.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder, in which a half-width of a frictional force, which is measured on a surface of the magnetic layer with a lateral force microscope, is 200 mV or less, and standard deviation σ of the half-width of the frictional force in a width direction of the surface of the magnetic layer is 50.0 mV or less.

The present invention provides a magnetic tape having a non-magnetic support and a magnetic layer containing a strong magnetic powder, in a small-angle X-ray scattering spectrum of the non-magnetic support obtained by small-angle X-ray scattering measurement, in a region where q is 0.5 to 1.5 A-1, a ratio of a scattering intensity I at a q value q max at which a maximum of a rate of change of the scattering intensity is present to a scattering intensity I max at which a minimum of the rate of change of the scattering intensity is present is 2.7 or more, q min < 1.5 A-1 min < 0.5 A-1 max < 0.5 A-1 min < 0.5 A-1 min < 0.5 A-1 max and a glass transition temperature Tg of the non-magnetic support is 140°C or more, a magnetic tape cartridge including the magnetic tape, and a magnetic recording and reproducing apparatus.

Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a dielectric layer on top of a bottom contact; creating an opening in the dielectric layer, the opening has a slant top edge; filling a bottom portion of the opening to form a bottom electrode; filling a top portion of the opening with a first ferromagnetic material to form a first ferromagnetic layer; forming a stack of blanket layers, including a blanket tunnel barrier layer, a blanket second ferromagnetic layer, and a blanket top electrode layer, on top of the first ferromagnetic layer; patterning the stack of blanket layers into a top portion of a magnetic tunnel junction stack that includes a tunnel barrier layer, a second ferromagnetic layer, and a top electrode; and forming a top contact in contact with the top electrode. A structure formed thereby is also provided.

The invention relates to a method for producing value documents (1), such as banknotes, checks, credit cards or other payment cards, identity cards or the like. A substrate body (2) having a front side (3) and a rear side (4) is provided, and a printing layer (6) is printed onto the front side (3) of the substrate body (2) using a first ink (5) and a second ink (15). The magnetically orientable pigment is orientated using a magnet device (11), and then the magnetically orientable pigment is fixed by a curing matrix in the orientated state using a curing device (13). At least the first ink (5) is printed in a digital printing process by means of a first print head (7) which releases the first ink (5) in a dot grid in the form of drops such that the printed layer (6) forms a digital printed layer at least with respect to the first ink (5), the first ink (5) and the second ink (15) having two different colors, and the magnetically orientable pigments each comprise a multi-layer composite structure comprising at least a magnetic layer.

According to one embodiment, the present invention comprises a voltage-controlled magnetoresistive element having a variable resistance value, and a first control circuit that controls a voltage or a current applied to the magnetoresistive element. The magnetoresistive element includes a first magnetic layer having a voltage-controlled magnetic anisotropy effect, a second magnetic layer having a voltage-controlled magnetic anisotropy effect of a different magnitude from the voltage-controlled magnetic anisotropy effect of the first magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. The first control circuit attenuates the voltage or the current.

The embodiment of the invention discloses a read-write head device structure, a magnetic head, a magnetic storage device and electronic equipment. The read-write head device structure comprises a coil and a magnetic path which are stacked on a substrate layer, wherein the coil and the magnetic path are embedded in an insulating dielectric layer; the magnetic path comprises a first magnetic conductive layer and a second magnetic conductive layer, the first magnetic conductive layer is arranged close to the substrate layer, and the second magnetic conductive layer is located on the side, away from the substrate layer, of the first magnetic conductive layer; the coil is spirally wound on the first magnetic conductive layer or the second magnetic conductive layer and is wound layer by layer in the first extending direction of the first magnetic conductive layer or the second magnetic conductive layer. According to the arrangement, the three-dimensional space of the read-write head is fully utilized to form the coil structure, the coil is spirally wound between the first end and the second end of the first magnetic conductive layer or the second magnetic conductive layer, the size of the read-write head device in the extending direction of the read-write surface can be reduced, and the read-write efficiency is improved by improving the magnetic field write-in density and the read-write efficiency. Good magnetic storage performance can be obtained, and the use requirements of different data high-density storage scenes can be met.

The invention provides a magnetic watermark anti-counterfeiting element and a manufacturing method and system thereof, and a readable storage medium. The magnetic watermark anti-counterfeiting element comprises a base material layer; the micro-nano matrix structure layer comprises a micro-nano structure; the micro-nano matrix structure layer is arranged on one side of the base material layer, the micro-nano structure is a complete pattern, or the micro-nano matrix structure layer is arranged on the two sides of the base material layer, the micro-nano structure comprises a first micro-nano structure located on one side of the base material layer and a second micro-nano structure located on the other side of the base material layer, and the first micro-nano structure and the second micro-nano structure are combined to form the complete pattern; the grooves of the micro-nano matrix structure layer are filled with the magnetic layer, and the magnetic layer comprises at least one magnetic material and at least one non-magnetic material; and the colored coating is positioned above the magnetic layer. According to the technical scheme of the invention, the magnetic features and the watermark features are combined, the watermark features of the plastic currency can be solved, the concealment of the magnetic features can be improved, and the anti-counterfeiting complexity and difficulty are increased.

The present application provides a magnetic layer having a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm2 or more, which is achieved without using a non-magnetic underlayer for promoting in-plane orientation of the magnetic layer and without performing heat deposition 2 The above in-plane magnetization film, in-plane magnetization film multilayer structure, hard bias layer, magnetoresistance effect element, and sputtering target. The in-plane magnetization film has: a preliminary magnetic layer (12A) containing Co, Pt, and a non-magnetic grain boundary material and having a thickness of 1 to 32 nm; and a magnetic layer main portion (12B) formed on the preliminary magnetic layer (12A) and containing Co, Pt, and a non-magnetic oxide, the above non-magnetic grain boundary material of the preliminary magnetic layer (12A) containing at least one of a Zn oxide and a Ta oxide.