This invention discloses a high-precision dual-
mass silicon micro-
gyroscope device based on the tunneling magnetoresistive effect. The device comprises two
layers: an upper layer is a
silicon sensing structure, and a lower layer is a glass substrate structure with
metal electrodes and a tunneling magnetoresistive detection module. The upper structure is bonded to the lower structure via anchor points. The upper structure consists of two identical
gyroscope substructures, a pair of support beams, and a pair of anchor points. The lower structure consists of a tunneling magnetoresistive detection module, a glass substrate, driving electrodes, driving and detection electrodes, quadrature electrodes, a coil input interface, a coil input
electrode, a coil output interface, a coil output
electrode, a common
electrode, and
signal leads. This invention proposes a
silicon micro-
gyroscope using a miniature coil as the excitation mechanism, resulting in a stable
magnetic field, controllable
field strength, and high integration. Simultaneously, the use of a differential tunneling magnetoresistive detection structure provides advantages such as strong anti-common-mode error capability, high sensitivity, and high measurement accuracy.