45results about How to "High Q value" patented technology

The invention discloses a terahertz sensor based on graphene Fano resonance and a regulation and control method and application thereof, and relates to the technical field of sensing devices, the terahertz sensor comprises a substrate layer, a dielectric layer and a graphene layer, the graphene layer comprises at least one unit structure arranged on the dielectric layer, each unit structure comprises two long graphene ribbons arranged in parallel at intervals and four short graphene ribbons arranged between the two long graphene ribbons, the four short graphene ribbons are symmetrically arranged at the two ends of the two long graphene ribbons in pairs, and the outer ends of the short graphene ribbons are flush with the ends of the long graphene ribbons. Fano resonance is combined with the graphene terahertz sensor, electric dipole resonance caused by the action of an electric field and a magnetic field is utilized to generate a Fano resonance phenomenon, radiation loss is effectively reduced and the Q value of the sensor is improved through destructive interference action between a light mode and a dark mode, and the terahertz sensor has good sensing performance and can be used for sensing terahertz waves. The method has important application potential in the aspects of biomedicine and sample detection.

The present disclosure provides an electrostatic MEMS resonator with low dynamic resistance, comprising: a first resonance unit, which is a ring structure; a first support unit, one end of which is connected to the first resonance unit, and the other end is connected to the first base; wherein the length of the first support unit is equal to one quarter of the resonance wavelength of the electrostatic MEMS resonator; a pair of electrodes, comprising: a first electrode and a second electrode, the first electrode is located on the inner side of the first resonance unit, and the second electrode is located on the outer side of the first resonance unit; wherein the first electrode and the second electrode are respectively spaced apart from the first resonance unit by a first gap layer. The present disclosure also provides an electrostatic MEMS resonator array with low dynamic resistance.

The invention discloses a bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of micro electro mechanical systems, the bulk acoustic wave resonator comprises a substrate, a bottom electrode, a piezoelectric layer and a top electrode, the bottom electrode, the piezoelectric layer and the top electrode are sequentially arranged on the substrate, and an acoustic reflection structure is formed in the substrate. The projection overlapping area of the bottom electrode, the piezoelectric layer, the top electrode and the sound reflection structure on the substrate is an effective resonance area, the top electrode bends upwards at the edge of the effective resonance area to form a gap with the piezoelectric layer, a reinforcing structure is formed on the upper surface of the top electrode, and the conductivity of the reinforcing structure is larger than that of the top electrode. The projection of the reinforcing structure on the substrate is larger than or equal to the projection of the gap on the substrate. According to the bulk acoustic wave resonator and the preparation method thereof provided by the invention, the Q value and the reliability of the bulk acoustic wave resonator can be improved.

This invention provides a glass-based heterogeneous integrated structure with back vias and its fabrication method. Back vias are designed on a heterogeneous integrated wafer. The heterogeneous integrated wafer includes a glass substrate and a piezoelectric crystal layer, or at least one heterogeneous thin film layer is bonded between the glass substrate and the piezoelectric crystal layer. The back vias are blind vias and / or through-holes, with the blind vias etched to reach the piezoelectric crystal layer or any heterogeneous thin film layer. Filler metal is sputtered into the back vias. Before etching the front piezoelectric crystal layer, a surface acoustic wave (SAW) filter pattern can be fabricated on the complete surface of the glass-based heterogeneous integrated wafer with back vias. After etching the piezoelectric crystal layer, the bottom of the filler metal is exposed on the surface of the glass-based heterogeneous integrated wafer. The SAW filter and the filler metal are then interconnected through photolithography, evaporation or sputtering, electroplating, etc. The blind vias can be arranged into a folded inductor, connected to the front device layer through the through-holes. This invention features better device heat dissipation, improved package design and mass production capabilities, higher integration density, and higher device Q-value.

The invention provides an MEMS resonator and a preparation method thereof, the MEMS resonator comprises a substrate, a resonant body and at least two anchor points, each anchor point is arranged on the substrate, the two opposite sides of the middle area of the resonant body are provided with sunken parts which are sunken towards the interior of the resonant body, and each anchor point extends into one sunken part to be connected with the resonant body. According to the invention, the sunken parts which are sunken towards the interior of the resonance body are arranged on the two sides of the middle area of the resonance body, so that the outer edge of the resonance body in the middle area and the transverse extension direction of the resonance body form an angle, sound waves generated by vibration of the resonance body can be blocked, energy loss is reduced, and a transmission path of the sound waves is planned. After being rebounded, the MEMS resonator interferes in the resonance body, so that the vibration of the resonance body is enhanced, the Q value of the MEMS resonator is further improved, and meanwhile, the impedance is reduced.

Provided is a coil component capable of improving a Q value. The coil component includes: a core including a winding core portion, a first flange portion provided at a first end of the winding core portion, and a second flange portion provided at a second end of the winding core portion; a first external electrode provided at the first flange portion; a second external electrode provided at the second flange portion; and a wire wound around the winding core portion and electrically connected to the first external electrode and the second external electrode. The winding core portion has a peripheral surface extending in a circumferential direction centered on an axis of the winding core portion. In a cross section of the winding core portion including the axis, a distance between the peripheral surface and the axis at a central side in an axial direction of the winding core portion is smaller than distances at a first end side and a second end side of the winding core portion, and a distance between the wire and the axis at the central side in the axial direction of the winding core portion is smaller than distances at the first end side and the second end side of the winding core portion.

The invention provides a surface acoustic wave resonator and a filter, the surface acoustic wave resonator comprises an interdigital region and a bus bar, the interdigital region comprises a first branch and a second branch, and the first branch and the second branch are respectively located at two sides of the interdigital region along a first direction; the first sub-part comprises at least one first sub-part and at least one second sub-part, and the first sub-part comprises a plurality of first short fingers and a plurality of first long fingers; the second sub-part comprises a plurality of second short fingers and a plurality of second long fingers; the second sub-part comprises at least one third sub-part and at least one fourth sub-part, and the third sub-part comprises a plurality of third short fingers and a plurality of third long fingers; the fourth sub-part comprises a plurality of fourth short fingers and a plurality of fourth long fingers; the bus bar extends along a third direction, and the value range of an included angle between the third direction and the second direction is 0 degree < theta < 20 degrees. According to the surface acoustic wave resonator, the slowness is changed after the surface acoustic wave enters the surface acoustic wave resonator, the transverse mode is inhibited, and the Q value of the surface acoustic wave resonator is improved.

The invention provides a design method of a LiNbO3 microcavity with a pulley type coupler structure, and aims to generate a broadband dissipation Kerr soliton micro comb and effectively inhibit stimulated Raman scattering. According to the invention, the dispersion engineering design and the dissipation engineering design are combined, the abnormal group velocity dispersion characteristic in the microcavity is optimized, and the coupling efficiency is improved. Through accurate control of geometric parameters, abnormal GVD, phase matching conditions and coupling strength, it is guaranteed that the SRS effect is reduced to the maximum extent in the microcavity with the high-quality factor Q value, and stable generation of DKS is promoted. The output efficiency, the spectral width and the stability of the frequency comb can be effectively improved, and the frequency comb is widely applied to the fields of precision spectroscopy, optical communication, millimeter wave and microwave generation and the like.

The application discloses a kind of gas sensor based on Fano resonance and its gas detection method, and the gas sensor is composed of phononic crystal circular sheet, circular piezoelectric sheet, rectangular air cavity and barometer;The front and back of rectangular air cavity are open and fixed acrylic plate;Two circular holes are opened on the left and right side plates of rectangular air cavity, two circular holes are fixed and closed by phononic crystal circular sheet, and the outer surface of one side phononic crystal circular sheet adheres circular piezoelectric sheet;The inner surface of the top plate of rectangular air cavity is fixed with barometer.The application realizes that the normal frequency of the gas to be measured in rectangular air cavity in the left and right direction of rectangular air cavity and the normal frequency in the height direction of rectangular air cavity are close, so that two normal modes appear and coupling occurs, Fano resonance is generated, after sweep excitation is sent by signal generator, the sound pressure spectrum in rectangular air cavity is obtained by measuring sound pressure through barometer, so as to judge gas composition.

The invention provides a transverse excitation bulk acoustic wave resonator and a filter. The resonator comprises a piezoelectric substrate; the first electrode group and the second electrode group are arranged in the piezoelectric substrate at intervals, the first electrode group and the second electrode group are configured to penetrate through the piezoelectric substrate in the thickness direction of the piezoelectric substrate, the first electrode group comprises at least two first sub-electrodes which are arranged at intervals, and the second electrode group comprises at least two second sub-electrodes which are arranged at intervals; different electrode groups are configured to apply different potentials so as to form active areas among the different electrode groups, and different sub-electrodes in the same electrode group are configured to apply the same potential so as to form passive areas among different sub-electrodes in the same electrode group. Uniform electric fields are distributed in the active area, so that high-phase-velocity sound wave transmission and higher electromechanical coupling can be realized; various functional structures can be arranged in the passive area, so that the electrical performance, mechanical performance or / and thermal performance of the resonator are improved.

The utility model discloses a superconducting liquid-helium-free limb magnetic resonance imaging system which comprises a magnet support, a cylindrical superconducting magnet unit, a receiving and transmitting integrated coil, an imaging area and a seat. The cylindrical superconducting magnet unit is fixed on the magnet bracket, and the opening direction of the cylindrical superconducting magnet unit is vertical to the opening direction of the magnet bracket; an imaging area is arranged in the magnet, and the receiving and transmitting integrated coil is fixed in the cylindrical superconducting magnet unit to form the imaging area. According to the utility model, the cylindrical superconducting magnet is adopted, only a scanning part is placed in the center of the magnet, and a patient does not need to be examined in a closed environment; a transmitting and receiving integrated coil is adopted, so that the Q value, the uniformity and the linearity are higher, and the power consumption is lower; the inspected area is always located in the center of the magnetic field and in the area with the magnetic field uniformity meeting the standard; the lifting seat ensures that the scanned area of the patient is always in the center of the magnetic field, and image quality can be improved.

The invention relates to the technical field of radio frequency devices, and discloses a radio frequency front-end module and electronic equipment, and the radio frequency front-end module comprises a substrate; the radio frequency switch chip is provided with a first radio frequency switch circuit and a second radio frequency switch circuit; first and second filters; the first matching inductor is arranged between the first radio frequency switch circuit and the first filter, the working frequency band of the first matching inductor comprises a first frequency band, the second matching inductor is arranged between the second radio frequency switch circuit and the second filter, and the working frequency band of the second matching inductor comprises a second frequency band; the center frequency of the first frequency band is greater than the center frequency of the second frequency band and / or the frequency band width of the first frequency band is greater than the frequency band width of the second frequency band; each of the first matching inductor and the second matching inductor comprises a metal wire wound on the substrate, and the break angle of the metal wire of the first matching inductor is smaller than the break angle of the metal wire of the second matching inductor, so that the matching inductor Q value corresponding to the specific frequency band meets the signal transmission requirement of the radio frequency front-end module, and the signal transmission quality is improved.

This invention discloses a surface acoustic wave (SAW) resonator, comprising a piezoelectric layer; an electrode layer on the piezoelectric layer; and a transducer comprising a first busbar, a first long finger, a first dummy finger, a second busbar, a second long finger, and a second dummy finger. The first and second busbars extend along a first direction and are positioned opposite each other. The first long finger, second dummy finger, second long finger, and first dummy finger extend along a second direction and are all located between the first and second busbars. The first long finger and second dummy finger are positioned opposite each other. The piezoelectric layer includes at least one heterostructure, the depth of which is greater than the transducer thickness. The propagation speed of SAW in the heterostructure differs from its propagation speed in the piezoelectric layer. The heterostructure extends along the first direction, and its vertical projection onto the piezoelectric layer overlaps with the vertical projection onto the piezoelectric layer but does not overlap with the vertical projections onto the first and second gaps. This invention suppresses lateral mode transmission and improves filter performance.

The invention discloses a double-ball coupling type photoacoustic multi-gas sensor, which comprises a shell, a double-ball coupling type photoacoustic cell is arranged in the shell, the double-ball coupling type photoacoustic cell comprises a large ball body and a small ball body which are coupled with each other, the maximum sound pressure is located in the whole small ball body, and the maximum sound pressure is located in the whole small ball body. The tail end of the small sphere is provided with a cantilever beam sonic sensor used for detecting a photoacoustic signal, and the cantilever beam sonic sensor is internally provided with a cantilever beam which is in positive correlation with the concentration of gas in the photoacoustic cell. The double-ball coupling type photoacoustic cell is composed of two mutually-coupled balls, the low-concentration gas detection capacity is remarkably improved, multi-gas detection can be achieved, and due to the fact that the vibration amplitude of the cantilever beam is in positive correlation with the gas concentration in the photoacoustic cell, the gas concentration in the photoacoustic cell can be accurately detected by accurately detecting the vibration amplitude of the cantilever beam. The gas concentration change in the photoacoustic cell can be effectively reflected, and the photoacoustic cell has the advantages of low detection limit, high Q value, strong stability, high sensitivity, good signal-to-noise ratio, low cost and the like.

The present invention discloses a miniaturized low-insertion-loss high-suppression low-pass filter, which relates to the technical field of low-pass filters, and comprises a low-pass filter housing (01) and a dielectric body, wherein the dielectric body is located inside the low-pass filter housing (01), a circuit layer is arranged inside the dielectric body, and an input port (02) connected to a line of the circuit layer, an output port (03), a first grounding port (04), a second grounding port (05), a first empty port (06) and a second empty port (07) are arranged at the bottom of the low-pass filter housing. The present invention solves the problem that low insertion loss and high suppression cannot be effectively guaranteed in the limited space of existing electronic equipment.

The invention provides a temperature compensation type surface acoustic wave resonator and a filter. The temperature compensation type surface acoustic wave resonator comprises a substrate, an interdigital transducer, a reflecting grating region, a first load structure, a second load structure, a third load structure and a temperature compensation layer, the first load structure is arranged on one side, far away from the substrate, of the long-finger electrode, and the orthographic projection of the first load structure on the substrate is at least partially overlapped with the orthographic projection of at least one long-finger electrode on the substrate; the second load structure is arranged on one side, far away from the long finger electrode, of the first load structure, and the orthographic projection of the second load structure on the substrate is at least partially overlapped with the orthographic projection of at least one first load structure on the substrate; the third load structure is arranged on the side, away from the substrate, of the reflecting grating area, and the orthographic projection of the third load structure on the substrate is at least partially overlapped with the orthographic projection of the reflecting grating on the substrate. According to the temperature compensation type surface acoustic wave resonator, the acting force of the long finger electrode and the reflecting grating on the substrate can be increased, the propagation speed of the surface acoustic wave is changed, then transverse mode clutters can be restrained, and the Q value of the temperature compensation type surface acoustic wave resonator is improved.

This invention belongs to the field of passive radio frequency microwave devices, and discloses a symmetrical source-load coupled bandpass filter based on GaAs IPD technology. The filter includes a MIM grounding capacitor, a coupling capacitor, a resonant capacitor, and a planar spiral inductor integrated on a GaAs substrate. Symmetrical Pi-type structures are arranged on both sides of the input and output terminals. A source-load coupled filter loop is formed in the middle by the coupling capacitor and two parallel grounded resonators. Transmission zeros are introduced on both sides outside the passband, and additional zeros are formed on the high-frequency side. With this structure, low insertion loss, high out-of-band rejection, and miniaturized integration can be achieved in the 1GHz-10GHz range.

The invention discloses a filter and a multiplexer. The filter comprises a first port, a second port, a third port and at least one filtering unit, the filtering unit comprises an acoustic resonance network, a compensation element and at least one first element; the acoustic resonance network comprises a series resonator and a parallel resonator; the series resonator is connected between the first port and the second port, one end of the parallel resonator is connected with the series resonator, and the other end of the parallel resonator is connected with the third port; the first element is connected in series with the compensation element and then is connected in parallel with the series resonator, and / or the first element is connected in series with the compensation element and then is connected in parallel with the parallel resonator. According to the technical scheme provided by the embodiment of the invention, the first element is connected in series with the compensation element and then is connected in parallel with the series resonator and / or the parallel resonator, so that the roll-off characteristic of the filter is improved, the passband bandwidth is ensured, the transition bandwidth and passband insertion loss are reduced, and the filtering performance of the filter is improved.

The application provides an acoustic resonator, comprising a substrate, a resonant functional layer arranged above the substrate, the resonant functional layer comprising at least a bottom electrode, a piezoelectric layer and a top electrode arranged in a stack, a resonant cavity arranged between the resonant functional layer and the substrate, an effective resonant area being defined by the area where the resonant functional layer overlaps the resonant cavity, a release hole at least penetrating the piezoelectric layer and communicating with the resonant cavity, a channel penetrating the resonant functional layer and communicating with the resonant cavity, the channel communicating with the release hole through the resonant cavity, and in a horizontal direction, the maximum cross-sectional area of the channel is greater than the maximum cross-sectional area of the release hole. By arranging the channel penetrating the resonant functional layer and communicating with the resonant cavity, the heat center area of the resonator is removed, the heat accumulation of the effective resonant area is reduced, and the temperature uniformity is improved. Further, the side wall of the channel is provided with a reinforcing structure extending along the side edge of any layer in the resonant functional layer to the side edge of another layer, so that the structural strength of the resonator is improved and the transverse wave is inhibited.

The invention discloses a high-Q-value and high-selectivity band-pass filter based on an LTCC (Low Temperature Co-Fired Ceramic) dielectric integrated suspension line. According to the filter, a low-temperature co-fired ceramic process is combined with a dielectric integrated suspended line structure, and the dielectric and conductor loss is remarkably reduced and the quality factor is improved by constructing an air cavity in a multi-layer dielectric and adopting a resonator design with symmetrical upper and lower layers. Meanwhile, the U-shaped metal conductor transmission line is used for introducing cross coupling, transmission zero points are generated on the two sides of a passband, and therefore the filtering performance of high selectivity, low insertion loss, miniaturization and high reliability is achieved.

The application provides a particle trapping device and method based on a full dielectric super surface, the particle trapping device based on the full dielectric super surface comprises a medium substrate layer and a resonance layer on the surface of the medium substrate layer, the resonance layer comprises a plurality of resonance units arranged in an array, the medium substrate layer is made of quartz material, the resonance units are made of silicon material, the resonance units are standard cylinders, the height of the standard cylinder is 2.5-3.1 times the radius of the bottom surface of the standard cylinder, and the array period of the resonance units is 2.7-3.3 times the radius of the bottom surface of the standard cylinder. The particle trapping device and method based on the full dielectric super surface can realize high Q value and stable particle trapping under the influence of different incident angles and processing errors.

The application discloses a surface acoustic wave resonator and filter, which comprises a substrate, a plurality of interdigital electrode groups located on one side of the substrate, the interdigital electrode group comprising a first electrode and a second electrode, the first electrode and the second electrode being arranged along a first direction and extending along the first direction, a gap being formed between the first electrode and the second electrode along the first direction, a plurality of load structure groups being located on one side of the substrate and in the gap, the load structure group comprising a first load structure and a second load structure arranged along the first direction, the first load structure being in contact with the first electrode, and the second load structure being in contact with the second electrode, the first load structure and the second load structure each comprising at least two sub-load structures arranged along the first direction, and the density of any two of the two sub-load structures in the same load structure and the electrode in contact with the sub-load structure being different. By adopting the above-mentioned means, the transverse mode can be suppressed by arranging the load structure group, and the Q value of the resonator is improved.

The embodiment of the invention provides a ceramic substrate, a composite piezoelectric substrate, an electronic device and a module, the ceramic substrate comprises a ceramic material base body, and the ceramic material base body is provided with a first surface and a second surface which are opposite to each other; a doping layer which extends by a preset thickness from the first surface to the direction gradually close to the second surface is formed in the ceramic material matrix; the doping layer comprises a target doping element doped in the ceramic material matrix, and the doping concentration range of the target doping element in the doping layer is 1 * 10 < 17 > ions / cm < 3 > to 5 * 10 < 20 > ions / cm < 3 >. According to the elastic wave device provided by the embodiment of the invention, the Q value can be improved, and the insertion loss can be improved.

The application belongs to the field of optical communication, optical interconnection and optical sensing, and particularly relates to a micro-ring resonator with gradually changed cross-section width of micro-ring resonant cavity, which comprises a micro-ring resonant cavity and a coupling waveguide; the cross-section width of the micro-ring resonant cavity satisfies: uniformly widening along the counterclockwise direction of the micro-ring from the center of the coupling area, reaching the maximum at the symmetrical position of the center of the coupling area relative to the center of the micro-ring, and uniformly narrowing along the counterclockwise direction of the micro-ring from the maximum, so as to limit the fundamental mode light field in the waveguide as much as possible, reduce the interaction between the light field and the side wall, and reduce the scattering loss caused by the roughness of the side wall, wherein the gradual change rates of the uniform widening and the uniform narrowing are the same and satisfy: the half angle of the width gradually changed waveguide is not greater than the mode diffusion half angle, so as to avoid the excitation of high-order modes of the input light in the micro-ring and realize the adiabatic transmission of the fundamental mode. Therefore, the scheme can reduce the transmission loss of the micro-ring resonant cavity and effectively improve the Q value of the micro-ring resonator.

This invention discloses a thin-film bulk acoustic wave resonator and its fabrication method. The thin-film bulk acoustic wave resonator includes: a first support layer located in a second edge region comprising a first support portion and a first suspension portion; the first suspension portion comprising a first recess, a first protrusion, and a second recess; the first support layer located in the first edge region comprising a second protrusion; the first support portion contacting a substrate; and the first recess, first protrusion, second recess, and second protrusion not contacting the substrate; and a cavity being formed on a first surface of the substrate adjacent to the first support layer. Alternatively, the first support layer located in the second edge region comprising a second support portion in contact with the substrate; the first support layer further comprising a second suspension portion located between the second support portion and the first edge region; the second suspension portion further comprising at least one third protrusion; and the first edge region comprising a fourth protrusion. This invention can improve the problem of transverse wave energy leakage and increase the Q value of the resonator.

This invention provides a resonant cavity micro-light-emitting diode array device and its fabrication method for optical interconnect applications. It relates to the field of semiconductor optoelectronic device technology. The device includes: a substrate; a first dielectric layer formed on the substrate; a light-emitting epitaxial structure formed on the first dielectric layer; and a second dielectric layer formed on the light-emitting epitaxial structure. The first dielectric layer, the light-emitting epitaxial structure, and the second dielectric layer constitute an optical resonant cavity structure. Photons propagate back and forth within the optical resonant cavity structure to preserve and enhance wavelengths that satisfy the resonance condition, outputting spontaneously emitted light with monochromaticity and a satisfactory light divergence angle.

The invention discloses a Q value optimization method of a photonic crystal microcavity, a storage medium and equipment, and relates to the technical field of photonic crystal microcavities, the photonic crystal microcavity comprises a one-dimensional photonic crystal, the center of the one-dimensional photonic crystal is a gradual change area with 12 hole radiuses and lattice constants gradually changing, and the two sides of the one-dimensional photonic crystal are reflection areas with fixed lattice constants and hole radiuses. The optimization method comprises the following steps: taking the cavity length of the photonic crystal microcavity and six lattice constants of the gradual change region as parameters to be optimized; obtaining a first data sample set and a second data sample set of to-be-optimized parameters, dividing the first data sample set into a training set and a test set to train and test the LSSVM model, and outputting log10Q; and taking the second data sample set as an initial population of a genetic algorithm, taking log10Q as a fitness function, and obtaining an optimized Q value until the fitness function tends to be stable. According to the invention, the Q value of the one-dimensional photonic crystal microcavity can be greatly increased in a short time.

The invention discloses a multiband microwave metasurface absorber, and relates to the technical field of microwave functional devices, the multiband microwave metasurface absorber comprises a plurality of unit structures which are periodically arranged, and each unit structure comprises a metal grounding layer, an intermediate dielectric layer and a top metal resonance structure which are arranged from bottom to top; the top metal resonant structure comprises a peripheral closed ring and a metal cross-shaped structure arranged in the center of the peripheral closed ring, and the peripheral closed ring is formed by connecting four square metal rings end to end; the size of each square metal ring and the size of the metal cross-shaped structure are configured to enable the absorber to excite at least two resonance absorption peaks with the quality factors larger than 400 in the microwave frequency band of 8 GHz to 20 GHz. The dual requirements of multi-band coverage and high-frequency selectivity are met at the same time.

The invention belongs to the field of semiconductor device manufacturing, and particularly discloses a suspended inductor structure and a preparation method and application thereof. The suspension inductor structure comprises two bases and an arc-shaped part, and the two bases are arranged in the horizontal direction; the two ends of the arc-shaped part are fixedly connected with the upper surfaces of the two bases correspondingly. An insulating layer is arranged on the upper surface of the chip substrate, and a mounting space is arranged in the insulating layer; the end parts of the base and the arc-shaped part are positioned in the mounting space; the base and the arc-shaped part are made of metal materials. When the formed suspension structure is applied to the intersection of two inductance metal wires, an insulating layer does not need to be plated between the two inductance metal wires, and the Q value of the chip inductor can be improved.

The application discloses a SAW resonator of an aluminum nitride-based heteroacoustic layer, and is used for improving resonator performance. The resonator comprises a heteroacoustic layer (HAL) structure, an input interdigital transducer (IDT), an output IDT, a first phononic crystal and a plurality of second phononic crystals. The HAL structure comprises a piezoelectric layer and a composite substrate, the piezoelectric material of the piezoelectric layer is scandium-doped aluminum nitride material. The input IDT and the output IDT are arranged on the piezoelectric layer respectively. The first phononic crystal is embedded into the piezoelectric layer and located between the input IDT and the output IDT, and is used for constructing a defect band through the first phononic crystal, so that the sound wave of the input IDT is propagated to the output IDT through the defect band. The input IDT comprises an input bus bar, and the output IDT comprises an output bus bar. The plurality of second phononic crystals are embedded into the piezoelectric layer respectively and located at two ends of the input bus bar and two ends of the output bus bar respectively, and are used for reflecting the sound wave through the second phononic crystals.