21results about How to "High Q value" patented technology

This invention provides a glass-based heterogeneous integrated structure with back vias and its fabrication method. Back vias are designed on a heterogeneous integrated wafer. The heterogeneous integrated wafer includes a glass substrate and a piezoelectric crystal layer, or at least one heterogeneous thin film layer is bonded between the glass substrate and the piezoelectric crystal layer. The back vias are blind vias and / or through-holes, with the blind vias etched to reach the piezoelectric crystal layer or any heterogeneous thin film layer. Filler metal is sputtered into the back vias. Before etching the front piezoelectric crystal layer, a surface acoustic wave (SAW) filter pattern can be fabricated on the complete surface of the glass-based heterogeneous integrated wafer with back vias. After etching the piezoelectric crystal layer, the bottom of the filler metal is exposed on the surface of the glass-based heterogeneous integrated wafer. The SAW filter and the filler metal are then interconnected through photolithography, evaporation or sputtering, electroplating, etc. The blind vias can be arranged into a folded inductor, connected to the front device layer through the through-holes. This invention features better device heat dissipation, improved package design and mass production capabilities, higher integration density, and higher device Q-value.

Provided is a coil component capable of improving a Q value. The coil component includes: a core including a winding core portion, a first flange portion provided at a first end of the winding core portion, and a second flange portion provided at a second end of the winding core portion; a first external electrode provided at the first flange portion; a second external electrode provided at the second flange portion; and a wire wound around the winding core portion and electrically connected to the first external electrode and the second external electrode. The winding core portion has a peripheral surface extending in a circumferential direction centered on an axis of the winding core portion. In a cross section of the winding core portion including the axis, a distance between the peripheral surface and the axis at a central side in an axial direction of the winding core portion is smaller than distances at a first end side and a second end side of the winding core portion, and a distance between the wire and the axis at the central side in the axial direction of the winding core portion is smaller than distances at the first end side and the second end side of the winding core portion.

The application discloses a kind of gas sensor based on Fano resonance and its gas detection method, and the gas sensor is composed of phononic crystal circular sheet, circular piezoelectric sheet, rectangular air cavity and barometer;The front and back of rectangular air cavity are open and fixed acrylic plate;Two circular holes are opened on the left and right side plates of rectangular air cavity, two circular holes are fixed and closed by phononic crystal circular sheet, and the outer surface of one side phononic crystal circular sheet adheres circular piezoelectric sheet;The inner surface of the top plate of rectangular air cavity is fixed with barometer.The application realizes that the normal frequency of the gas to be measured in rectangular air cavity in the left and right direction of rectangular air cavity and the normal frequency in the height direction of rectangular air cavity are close, so that two normal modes appear and coupling occurs, Fano resonance is generated, after sweep excitation is sent by signal generator, the sound pressure spectrum in rectangular air cavity is obtained by measuring sound pressure through barometer, so as to judge gas composition.

The invention relates to the technical field of radio frequency devices, and discloses a radio frequency front-end module and electronic equipment, and the radio frequency front-end module comprises a substrate; the radio frequency switch chip is provided with a first radio frequency switch circuit and a second radio frequency switch circuit; first and second filters; the first matching inductor is arranged between the first radio frequency switch circuit and the first filter, the working frequency band of the first matching inductor comprises a first frequency band, the second matching inductor is arranged between the second radio frequency switch circuit and the second filter, and the working frequency band of the second matching inductor comprises a second frequency band; the center frequency of the first frequency band is greater than the center frequency of the second frequency band and / or the frequency band width of the first frequency band is greater than the frequency band width of the second frequency band; each of the first matching inductor and the second matching inductor comprises a metal wire wound on the substrate, and the break angle of the metal wire of the first matching inductor is smaller than the break angle of the metal wire of the second matching inductor, so that the matching inductor Q value corresponding to the specific frequency band meets the signal transmission requirement of the radio frequency front-end module, and the signal transmission quality is improved.

This invention discloses a surface acoustic wave (SAW) resonator, comprising a piezoelectric layer; an electrode layer on the piezoelectric layer; and a transducer comprising a first busbar, a first long finger, a first dummy finger, a second busbar, a second long finger, and a second dummy finger. The first and second busbars extend along a first direction and are positioned opposite each other. The first long finger, second dummy finger, second long finger, and first dummy finger extend along a second direction and are all located between the first and second busbars. The first long finger and second dummy finger are positioned opposite each other. The piezoelectric layer includes at least one heterostructure, the depth of which is greater than the transducer thickness. The propagation speed of SAW in the heterostructure differs from its propagation speed in the piezoelectric layer. The heterostructure extends along the first direction, and its vertical projection onto the piezoelectric layer overlaps with the vertical projection onto the piezoelectric layer but does not overlap with the vertical projections onto the first and second gaps. This invention suppresses lateral mode transmission and improves filter performance.

This invention belongs to the field of passive radio frequency microwave devices, and discloses a symmetrical source-load coupled bandpass filter based on GaAs IPD technology. The filter includes a MIM grounding capacitor, a coupling capacitor, a resonant capacitor, and a planar spiral inductor integrated on a GaAs substrate. Symmetrical Pi-type structures are arranged on both sides of the input and output terminals. A source-load coupled filter loop is formed in the middle by the coupling capacitor and two parallel grounded resonators. Transmission zeros are introduced on both sides outside the passband, and additional zeros are formed on the high-frequency side. With this structure, low insertion loss, high out-of-band rejection, and miniaturized integration can be achieved in the 1GHz-10GHz range.

The application provides an acoustic resonator, comprising a substrate, a resonant functional layer arranged above the substrate, the resonant functional layer comprising at least a bottom electrode, a piezoelectric layer and a top electrode arranged in a stack, a resonant cavity arranged between the resonant functional layer and the substrate, an effective resonant area being defined by the area where the resonant functional layer overlaps the resonant cavity, a release hole at least penetrating the piezoelectric layer and communicating with the resonant cavity, a channel penetrating the resonant functional layer and communicating with the resonant cavity, the channel communicating with the release hole through the resonant cavity, and in a horizontal direction, the maximum cross-sectional area of the channel is greater than the maximum cross-sectional area of the release hole. By arranging the channel penetrating the resonant functional layer and communicating with the resonant cavity, the heat center area of the resonator is removed, the heat accumulation of the effective resonant area is reduced, and the temperature uniformity is improved. Further, the side wall of the channel is provided with a reinforcing structure extending along the side edge of any layer in the resonant functional layer to the side edge of another layer, so that the structural strength of the resonator is improved and the transverse wave is inhibited.

The invention discloses a high-Q-value and high-selectivity band-pass filter based on an LTCC (Low Temperature Co-Fired Ceramic) dielectric integrated suspension line. According to the filter, a low-temperature co-fired ceramic process is combined with a dielectric integrated suspended line structure, and the dielectric and conductor loss is remarkably reduced and the quality factor is improved by constructing an air cavity in a multi-layer dielectric and adopting a resonator design with symmetrical upper and lower layers. Meanwhile, the U-shaped metal conductor transmission line is used for introducing cross coupling, transmission zero points are generated on the two sides of a passband, and therefore the filtering performance of high selectivity, low insertion loss, miniaturization and high reliability is achieved.

The application provides a particle trapping device and method based on a full dielectric super surface, the particle trapping device based on the full dielectric super surface comprises a medium substrate layer and a resonance layer on the surface of the medium substrate layer, the resonance layer comprises a plurality of resonance units arranged in an array, the medium substrate layer is made of quartz material, the resonance units are made of silicon material, the resonance units are standard cylinders, the height of the standard cylinder is 2.5-3.1 times the radius of the bottom surface of the standard cylinder, and the array period of the resonance units is 2.7-3.3 times the radius of the bottom surface of the standard cylinder. The particle trapping device and method based on the full dielectric super surface can realize high Q value and stable particle trapping under the influence of different incident angles and processing errors.

The application discloses a surface acoustic wave resonator and filter, which comprises a substrate, a plurality of interdigital electrode groups located on one side of the substrate, the interdigital electrode group comprising a first electrode and a second electrode, the first electrode and the second electrode being arranged along a first direction and extending along the first direction, a gap being formed between the first electrode and the second electrode along the first direction, a plurality of load structure groups being located on one side of the substrate and in the gap, the load structure group comprising a first load structure and a second load structure arranged along the first direction, the first load structure being in contact with the first electrode, and the second load structure being in contact with the second electrode, the first load structure and the second load structure each comprising at least two sub-load structures arranged along the first direction, and the density of any two of the two sub-load structures in the same load structure and the electrode in contact with the sub-load structure being different. By adopting the above-mentioned means, the transverse mode can be suppressed by arranging the load structure group, and the Q value of the resonator is improved.

The embodiment of the invention provides a ceramic substrate, a composite piezoelectric substrate, an electronic device and a module, the ceramic substrate comprises a ceramic material base body, and the ceramic material base body is provided with a first surface and a second surface which are opposite to each other; a doping layer which extends by a preset thickness from the first surface to the direction gradually close to the second surface is formed in the ceramic material matrix; the doping layer comprises a target doping element doped in the ceramic material matrix, and the doping concentration range of the target doping element in the doping layer is 1 * 10 < 17 > ions / cm < 3 > to 5 * 10 < 20 > ions / cm < 3 >. According to the elastic wave device provided by the embodiment of the invention, the Q value can be improved, and the insertion loss can be improved.

The application belongs to the field of optical communication, optical interconnection and optical sensing, and particularly relates to a micro-ring resonator with gradually changed cross-section width of micro-ring resonant cavity, which comprises a micro-ring resonant cavity and a coupling waveguide; the cross-section width of the micro-ring resonant cavity satisfies: uniformly widening along the counterclockwise direction of the micro-ring from the center of the coupling area, reaching the maximum at the symmetrical position of the center of the coupling area relative to the center of the micro-ring, and uniformly narrowing along the counterclockwise direction of the micro-ring from the maximum, so as to limit the fundamental mode light field in the waveguide as much as possible, reduce the interaction between the light field and the side wall, and reduce the scattering loss caused by the roughness of the side wall, wherein the gradual change rates of the uniform widening and the uniform narrowing are the same and satisfy: the half angle of the width gradually changed waveguide is not greater than the mode diffusion half angle, so as to avoid the excitation of high-order modes of the input light in the micro-ring and realize the adiabatic transmission of the fundamental mode. Therefore, the scheme can reduce the transmission loss of the micro-ring resonant cavity and effectively improve the Q value of the micro-ring resonator.

This invention discloses a thin-film bulk acoustic wave resonator and its fabrication method. The thin-film bulk acoustic wave resonator includes: a first support layer located in a second edge region comprising a first support portion and a first suspension portion; the first suspension portion comprising a first recess, a first protrusion, and a second recess; the first support layer located in the first edge region comprising a second protrusion; the first support portion contacting a substrate; and the first recess, first protrusion, second recess, and second protrusion not contacting the substrate; and a cavity being formed on a first surface of the substrate adjacent to the first support layer. Alternatively, the first support layer located in the second edge region comprising a second support portion in contact with the substrate; the first support layer further comprising a second suspension portion located between the second support portion and the first edge region; the second suspension portion further comprising at least one third protrusion; and the first edge region comprising a fourth protrusion. This invention can improve the problem of transverse wave energy leakage and increase the Q value of the resonator.

This invention provides a resonant cavity micro-light-emitting diode array device and its fabrication method for optical interconnect applications. It relates to the field of semiconductor optoelectronic device technology. The device includes: a substrate; a first dielectric layer formed on the substrate; a light-emitting epitaxial structure formed on the first dielectric layer; and a second dielectric layer formed on the light-emitting epitaxial structure. The first dielectric layer, the light-emitting epitaxial structure, and the second dielectric layer constitute an optical resonant cavity structure. Photons propagate back and forth within the optical resonant cavity structure to preserve and enhance wavelengths that satisfy the resonance condition, outputting spontaneously emitted light with monochromaticity and a satisfactory light divergence angle.

The invention discloses a multiband microwave metasurface absorber, and relates to the technical field of microwave functional devices, the multiband microwave metasurface absorber comprises a plurality of unit structures which are periodically arranged, and each unit structure comprises a metal grounding layer, an intermediate dielectric layer and a top metal resonance structure which are arranged from bottom to top; the top metal resonant structure comprises a peripheral closed ring and a metal cross-shaped structure arranged in the center of the peripheral closed ring, and the peripheral closed ring is formed by connecting four square metal rings end to end; the size of each square metal ring and the size of the metal cross-shaped structure are configured to enable the absorber to excite at least two resonance absorption peaks with the quality factors larger than 400 in the microwave frequency band of 8 GHz to 20 GHz. The dual requirements of multi-band coverage and high-frequency selectivity are met at the same time.

The invention belongs to the field of semiconductor device manufacturing, and particularly discloses a suspended inductor structure and a preparation method and application thereof. The suspension inductor structure comprises two bases and an arc-shaped part, and the two bases are arranged in the horizontal direction; the two ends of the arc-shaped part are fixedly connected with the upper surfaces of the two bases correspondingly. An insulating layer is arranged on the upper surface of the chip substrate, and a mounting space is arranged in the insulating layer; the end parts of the base and the arc-shaped part are positioned in the mounting space; the base and the arc-shaped part are made of metal materials. When the formed suspension structure is applied to the intersection of two inductance metal wires, an insulating layer does not need to be plated between the two inductance metal wires, and the Q value of the chip inductor can be improved.

The application discloses a SAW resonator of an aluminum nitride-based heteroacoustic layer, and is used for improving resonator performance. The resonator comprises a heteroacoustic layer (HAL) structure, an input interdigital transducer (IDT), an output IDT, a first phononic crystal and a plurality of second phononic crystals. The HAL structure comprises a piezoelectric layer and a composite substrate, the piezoelectric material of the piezoelectric layer is scandium-doped aluminum nitride material. The input IDT and the output IDT are arranged on the piezoelectric layer respectively. The first phononic crystal is embedded into the piezoelectric layer and located between the input IDT and the output IDT, and is used for constructing a defect band through the first phononic crystal, so that the sound wave of the input IDT is propagated to the output IDT through the defect band. The input IDT comprises an input bus bar, and the output IDT comprises an output bus bar. The plurality of second phononic crystals are embedded into the piezoelectric layer respectively and located at two ends of the input bus bar and two ends of the output bus bar respectively, and are used for reflecting the sound wave through the second phononic crystals.

This invention provides a ring-shaped bulk acoustic wave resonator and its fabrication method, comprising a substrate, a piezoelectric stack structure, a mass load structure, a connecting wire structure, and a pad structure. The substrate has a cavity; the piezoelectric stack structure is a ring-shaped structure with a central cutout, comprising a bottom electrode, a piezoelectric layer, and a top electrode sequentially from bottom to top. The piezoelectric stack structure is suspended above the cavity and is not connected to the sidewalls of the cavity; the connecting wire structure is a curved, serpentine shape; the pad structure is connected to the substrate, and the piezoelectric stack structure is connected to the pad structure via the connecting wire structure. Because the piezoelectric stack structure is ring-shaped with a central cutout, the cavity can be directly etched from the cutout, eliminating the need for pre-etching cavity release holes, resulting in higher efficiency and reducing the probability of incomplete cavity release affecting resonator performance. The serpentine shape of the connecting wire structure allows it to bend, stretch, and twist in different directions, enhancing the resonator's ductility and sensitivity.

The application discloses a split type deep body temperature monitoring device, a preparation method and application, and belongs to the technical field of temperature monitoring. The monitoring device is prepared from biodegradable materials and comprises a double-layer electrode layer, a spacing layer, a connecting channel, a dielectric layer and a packaging layer. Each of the upper and lower electrode layers comprises a spiral inductance coil, a serpentine connecting wire and a capacitor plate. The spiral inductance coils are arranged on the two sides of the spacing layer and have opposite rotation directions, and are connected in series through the connecting channel to enhance mutual inductance. The serpentine connecting wire is used for connecting the spiral inductance coil and the capacitor plate, and improves mechanical flexibility. The application adopts a split type design, better realizes deep body temperature monitoring, and significantly improves a wireless reading distance and a Q value in cooperation with series-connected double-layer asymmetric coils, so that the accuracy of deep body temperature monitoring is comprehensively improved. Moreover, the sensor is made of fully biodegradable materials, secondary surgery for removal is avoided, and has a good biomedical application prospect.

This invention discloses a high-Q tuned filter, belonging to the field of tuned filter technology. The tuned filter includes two symmetrically arranged resonant cavities, each connected in parallel with an inductor. This invention reduces the current density of a single coil, suppresses high-frequency skin and proximity effects, significantly reduces the high-frequency loss resistance of the inductor, and significantly improves the Q value at the same operating frequency. It directly reduces in-band insertion loss and improves out-of-band rejection depth, resulting in a significant improvement in filtering accuracy and anti-interference capability.

The invention provides a filter chip prepared by adopting a multi-layer winding inductor and a preparation method of the filter chip, and relates to the technical field of filter chips, and the filter chip comprises an input port bonding pad, an output port bonding pad, the multi-layer winding inductor and a chip capacitor; the multi-layer winding inductor comprises a winding inductor, a dielectric layer and a metal ground, the winding inductor is arranged on the upper side of the dielectric layer, and the metal ground is arranged on the lower side of the dielectric layer; the input port bonding pad is connected with the input end of the chip capacitor and is connected with the multi-layer winding inductor; the output port bonding pad is connected with the output end of the chip capacitor and is connected with the multi-layer winding inductor; the chip capacitor is connected with the multi-layer winding inductor; the winding inductor comprises top-layer metal, bottom-layer metal and a substrate, a substrate metal through hole is formed in the substrate, the top-layer metal is located on the upper side of the substrate, the bottom-layer metal is located on the lower side of the substrate, and the top-layer metal and the bottom-layer metal are connected through the substrate metal through hole. The filter chip has the advantages that the inductance Q value of the filter chip is improved, and the application range of the filter chip is expanded.