The invention provides a three-dimensional
spiral inductor, a preparation method thereof and a
semiconductor device, and the method comprises the steps: forming a first bonding structure and a second bonding structure, the first bonding structure comprises a first
dielectric layer and a plurality of first
interconnection parts located in the first
dielectric layer, the second bonding structure comprises a second
dielectric layer and a plurality of second
interconnection parts located in the second
dielectric layer; the medium is bonded with the first medium layer and the second medium layer; forming a first conductive column on the first
interconnection part and a second conductive column on the second interconnection part through a
silicon through hole technology; a connection portion is formed to connect the first conductive pillar and the second conductive pillar. According to the preparation method of the three-dimensional
spiral inductor, the interconnection parts are respectively formed in the two bonding structures, then the two bonding structures are subjected to medium bonding, and the TSV columns connected with the interconnection parts are formed in the bonded structures, so that the three-dimensional
spiral inductor with high
inductance density and high quality factor is formed in an ultra-thick structure.