11 results about "Spiral inductor" patented technology

This invention discloses a miniaturized, wide-stopband low-pass filter design method, covering 3D model design, simulation optimization, circuit fabrication and testing, and design verification based on dielectric integrated suspension line technology. The core of the low-pass filter design is based on dielectric integrated suspension line technology. Furthermore, the core circuit of this filter employs three layers of surface-mount capacitors and a double-layer spiral inductor to reduce circuit size, while combining a honeycomb structure to extend the stopband. Compared to traditional circuit designs, the implemented filter exhibits self-encapsulation characteristics, achieving low insertion loss and an ultra-wide stopband range, providing an important basis for filter performance optimization.

A metal magnetic flexible composite inductor conductor and a preparation method thereof; the preparation method of the metal magnetic flexible composite inductor conductor comprises the following steps: S1: taking metal and magnetic material; the magnetic induction intensity of the magnetic material is greater than or equal to 1.6 T; S2: continuously attaching the metal to the magnetic material to obtain a conductive and magnetically conductive composite conductor; S3: cutting the conductive and magnetically conductive composite conductor by using a femtosecond laser processing technology to obtain a spiral flexible composite inductor conductor. The flexible composite inductor conductor prepared by the scheme can obtain a larger self-inductance value under the same size, can effectively suppress leakage magnetic flux, reduce leakage magnetic coupling to the outside world and electromagnetic interference, and can realize a more compact spiral inductor layout by reducing the number of turns or reducing the coil geometric size, thereby solving the problem that high inductance density and low power consumption cannot be simultaneously achieved in the traditional inductor conductor.

A semiconductor package substrate with embedded passive devices and methods of forming the same is provided. Embedded passive devices include inductors and inductor modules and methods of forming the same are provided. Embedded inductors may be formed by deposition of magnetic core material, trenching of one or more channels, and placement of conductive wires to form an module embeddable in the semiconductor package substrate core. Provided are methods and apparatus for formation of embeddable pot-core, toroidal, and helical inductors.

This invention discloses a method, system, and terminal device for reverse engineering on-chip RF spiral inductors, relating to the field of RF integrated circuit auxiliary design technology. The invention includes: constructing an inductor database containing the mapping relationship between geometric structural parameters and S-parameters; building a forward surrogate model based on the Transformer architecture, introducing reciprocity and passive physical constraint loss functions, and training the model using a low-frequency weighting strategy to establish a high-precision mapping from geometric parameters to S-parameters; constructing a cascaded reverse neural network, using the fixed-parameter forward surrogate model to calculate the reconstruction error to update the reverse network weights; and in the design phase, employing a hybrid optimization strategy coupling differential evolution algorithm and the forward surrogate model, using the output of the reverse network as the initial population, searching in the global space for geometric parameters that satisfy the target inductance value and quality factor. This invention solves the problems of long simulation time in traditional inductor design and the existence of multi-value mapping and poor physical consistency in reverse engineering.

This invention discloses a design method for a three-dimensional passive lumped low-pass filter based on TSV (Through-Spirit Transformer). The method includes: determining the electrical parameters of each filter element in the passive lumped low-pass filter based on the performance indicators and selection results of the low-pass filter, and constructing the circuit structure diagram of the low-pass filter; determining the process parameters of the TSV three-dimensional integrated inductor using a computational model of a three-dimensional integrated spiral inductor; determining the process parameters of the coaxial TSV capacitor using a computational model of a coaxial TSV capacitor; and performing simulations based on the process parameters of the TSV three-dimensional integrated inductor and the coaxial TSV capacitor to complete the design of the three-dimensional passive lumped low-pass filter. The low-pass filter designed in this invention uses TSV technology to design a three-dimensional integrated spiral inductor and a coaxial TSV capacitor, resulting in good compatibility with integrated circuit processes and ease of three-dimensional integration. Furthermore, the use of a three-dimensional spiral inductor and coaxial TSV capacitor design significantly reduces the area of ​​the inductor and capacitor, facilitating integration and miniaturization.

The application discloses a high-inductance value heterogeneous three-dimensional spiral inductor based on a silicon adapter plate process and belongs to the technical field of radio frequency micro systems. The method integrates multiple planar double spiral patches on the basis of an original three-dimensional integrated inductor, so that the frequency range coverage basically reaches 0-3GHz, and the inductance value can reach 18.5nH. Compared with a traditional three-dimensional integrated inductor design, the method of the application makes the upper and lower layers of the planar double spiral patch staggered and interconnected, reduces the volume of an off-chip spiral inductor used in a traditional power amplifier application while realizing large inductance, and realizes higher inductance inductance value on a single-layer silicon substrate.

The application discloses a beam steering unit, a beam steering controller and an antenna system. The beam steering unit comprises: a first metal layer comprising a first base, four first spiral inductors arranged on the first base, any two adjacent first spiral inductors being mutually symmetrical, and two end-adjacent first spiral inductors being connected; a second metal layer comprising a second base, four second spiral inductors arranged on the second base, the four second spiral inductors being arranged in a central symmetry and the ends of each second spiral inductor being connected at a central point of the second base; and a third metal layer comprising a third base, four third spiral inductors arranged on the third base, any two adjacent third spiral inductors being mutually symmetrical, and two end-adjacent third spiral inductors being connected. The application can effectively reduce the deployment cost of the antenna system and improve the aperture efficiency of the antenna system.

The application discloses a spiral inductor assembly and a control method thereof, and relates to the technical field of inductors. The spiral inductor assembly comprises an inductor coil, a fixing assembly and a driving and adjusting assembly. The inductor coil is in a conical spiral structure, has a top end and a bottom end, and is configured as an air-core inductor structure. The fixing assembly is used for fixing the bottom end of the inductor coil. The driving and adjusting assembly is connected with the top end of the inductor coil and is configured to drive the top end of the inductor coil to move along an axial direction so as to change the pitch of the inductor coil. Based on the technical scheme disclosed by the application, the requirement of dynamic change of inductance values of different circuits under various working conditions can be met, the applicability and flexibility of the inductor assembly are greatly improved, the magnetic hysteresis loss and the eddy current loss can be effectively reduced, the occurrence of magnetic saturation can be avoided, and the quality factor can be improved.

This invention discloses a high-gain, miniaturized millimeter-wave low-noise amplifier. It includes an input matching network, a noise level circuit, a gain stage circuit, and an output matching network. The low-noise amplifier uses a series gate inductor for noise matching and wide-bandwidth input impedance matching. The gain stage employs a slow-wave transmission line feedback mechanism to achieve high gain and wide bandwidth, and miniaturization is achieved through a spiral inductor and a slow-wave transmission line. The output matching network uses an L-shaped matching network. Unlike traditional inductors or transmission lines, this invention uses a slow-wave transmission line for feedback, achieving high gain while also possessing foldable characteristics and allowing the same inductance value to be achieved with a shorter length, thereby reducing chip area and manufacturing costs.

A multi-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peak amplifier FET), a combining node, and a shunt inductive circuit. The first and second amplifiers and the combining node structure are formed integral with a semiconductor die, and the shunt inductive circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt inductive circuit is electrically coupled between the combining node structure and a ground reference node. The shunt inductive circuit includes a shunt inductance (e.g., including one or more wire bonds and / or one or more spiral inductors) integrated with the semiconductor die. The multi-path amplifier can also include an integrated phase shifter / impedance inverter coupled between the outputs of the first and second transistors, and the integrated phase shifter / impedance inverter is configured to apply a 90 degree phase delay between intrinsic drains of the first and second transistors.

The utility model discloses a multilayer nesting type spiral inductance coil relates to inductance coil field, including coil body, connecting subassembly and fixed seat, the center of coil body is provided with the fixed rod, and the outer side of fixed rod both ends is provided with blocking ring, and the end portion of fixed rod is provided with the clamping rod, and the fixed rod is provided with the clamping rod. And the outer walls of the two ends of the clamping rod are fixedly connected with limiting rings. According to the multi-layer nested spiral inductance coil, by arranging the connecting assembly and the moving assembly, in the using process of the spiral inductance coil, a worker can conveniently install the spiral inductance coil, the connecting structure is compact, and the situation that the structure is loosened in the subsequent using process is avoided; the spiral inductance coil can be used smoothly, meanwhile, a worker can adjust the supporting structure according to the actual situation of the spiral inductance coil conveniently, the spiral inductance coil is installed more conveniently, and the worker can use the spiral inductance coil conveniently.