27268results about "Printed circuit manufacture" patented technology

A luminal drilling system includes a drilling device and a control unit. The drilling device includes an elongate member having a drive shaft with a drill tip. The control unit includes a motor connectable to the drive shaft and control circuitry which rotationally oscillates the drive shaft with the direction of rotation automatically reversing whenever the load on the motor and / or drive shaft exceeds a threshold value.

An electro-optic display comprises a layer (130) of a solid electro-optic material, at least one electrode disposed adjacent the layer (130) of electro-optic material, and a layer (180) of a lamination adhesive interposed between the layer (130) of electro-optic material and the electrode, the lamination adhesive (180) having a higher electrical conductivity in a direction perpendicular to the layer of lamination adhesive than in the plane of the layer.

An wearable communications garment that includes one or more user-selectable inputs integrated into the garment. A sartorial communications apparatus may include a flexible material that is worn (e.g., as an undergarment) by the user and includes one or more interactive sensors that may be manually activated by a user, even through one or more intervening layers of clothing. The apparatus may also include one or more additional body sensors configured to sense a user's position, movement, and / or physiological status. The sensor(s) may be connected via a conductive trace on the garment to a sensor module for analysis and / or transmission. Methods of manufacturing the garments as well as methods of using the garments are also described.

A dielectrophoretic display comprises a substrate having walls defining at least one cavity, the cavity having a viewing surface and a side wall inclined to the viewing surface; a suspending fluid contained within the cavity; a plurality of at least one type of particle suspended within the suspending fluid; and means for applying to the substrate an electric field effect effective to cause dielectrophoretic movement of the particles to the side wall of the cavity.

Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and / or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

A multi-touch sensor panel can be created using a substrate with column and row traces formed on either side. Metal traces running along the border of the substrate can be used to bring the row traces to the same edge as the column traces. A single flex circuit can be fabricated to connect to the rows and columns on directly opposing sides. Flex printed circuits can be bonded to directly opposing attachment areas of a substrate by cooling one side of the substrate while bonding the other. In addition, “coverlay” material extending over right-angled traces on the flex circuit ensure that those traces do not get shorted should conductive bonding material get squeezed out during bonding. Furthermore, a spacer is placed at the distal end of the flex circuit to apply even bonding pressure over the entire flex circuit attachment area during bonding.

Methods of forming garments having one or more stretchable conductive ink patterns. Described herein are method of making garments (including compression garments) having one or more highly stretchable conductive ink pattern formed of a composite of an insulative adhesive, a conductive ink, and an intermediate gradient zone between the adhesive and conductive ink. The conductive ink typically includes between about 40-60% conductive particles, between about 30-50% binder; between about 3-7% solvent; and between about 3-7% thickener. The stretchable conductive ink patterns may be stretched more than twice their length without breaking or rupturing.

Methods of manufacturing electrochromic windows are described. An electrochromic device is fabricated to substantially cover a glass sheet, for example float glass, and a cutting pattern is defined based on one or more low-defectivity areas in the device from which one or more electrochromic panes are cut. Laser scribes and / or bus bars may be added prior to cutting the panes or after. Edge deletion can also be performed prior to or after cutting the electrochromic panes from the glass sheet. Insulated glass units (IGUs) are fabricated from the electrochromic panes and optionally one or more of the panes of the IGU are strengthened.

An improved back end of the line (BEOL) interconnect structure comprising an ultralow k (ULK) dielectric is provided. The structure may be of the single or dual damascene type and comprises a dense thin dielectric layer (TDL) between a metal barrier layer and the ULK dielectric. Disclosed are also methods of fabrication of BEOL interconnect structures, including (i) methods in which a dense TDL is provided on etched opening of a ULK dielectric and (ii) methods in which a ULK dielectric is placed in a process chamber on a cold chuck, a sealing agent is added to the process chamber, and an activation step is performed.

The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I:wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and / or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si-O-Si or Si-N-Si groups with organic side groups attached to the backbone.

The present invention provides a conductive adhesive agent capable of being diluted with a solvent to give good coating workability and allowing formation of a conductive joint excellent in both thermal conductivity and electrical conductivity by inhibiting a gas generated when a binder resin is heat-cured after attachment of a part. The conductive adhesive agent according to the present invention is a conductive adhesive agent wherein, based on 100 parts by weight of silver powder having an average particle diameter of micrometers, which is used for a conductive medium, e.g. as a main component, 1 to 10 parts by weight of silver fine particles having an average particle diameter of nanometers is used in combination therewith and 5 to 15 parts by weight of thermosetting resin as a binder resin component and 10 parts or less by weight of solvent for adjustment of a fluid viscosity are blended therein as essential components, and by selection of such a blending ratio, generation of a gas component during heating and curing of the thermosetting resin to prevent formation of voids, and at the same time, fabrication of a conductive joint excellent in thermal conductivity and electrical conductivity is achieved.

A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and / or a gate dielectric layer of the transistor.

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and / or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and / or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

Floor panels are shown, which are provided with a mechanical locking system having tongue and grooves provided with protrusions and cavities which are displaceable in relation to each other and configured such that the protrusions can obtain a vertically unlocked position where they match the cavities and a vertically locked position where the protrusions overlap each other.

The present invention generally provides an apparatus and method for selectively forming a metallized feature, such as an electrical interconnect feature, on a electrically insulating surface of a substrate. The present invention also provides a method of forming a mechanically robust, adherent, oxidation resistant conductive layer selectively over either a defined pattern or as a conformal blanket film. Embodiments of the invention also generally provide a new chemistry, process, and apparatus to provide discrete or blanket electrochemically or electrolessly platable ruthenium or ruthenium dioxide containing adhesion and initiation layers. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell device processing, or any other substrate processing, being particularly well suited for the application of stable adherent coating on glass as well as flexible plastic substrates. This invention may be especially useful for the formation of electrical interconnects on the surface of flat panel display or solar cell type substrates where the line sizes are generally larger than semiconductor devices or where the formed feature are not generally as dense.

Composite transparent conductors are described, which comprise a primary conductive medium based on metal nanowires and a secondary conductive medium based on a continuous conductive film.

An automated assembly sensor cable has a generally wide and flat elongated body and a registration feature generally traversing the length of the body so as to identify the relative locations of conductors within the body. This cable configuration facilitates the automated attachment of the cable to an optical sensor circuit and corresponding connector. In various embodiments, the automated assembly sensor cable has a conductor set of insulated wires, a conductive inner jacket generally surrounding the conductor set, an outer jacket generally surrounding the inner jacket and a registration feature disposed along the surface of the outer jacket and a conductive drain line is embedded within the inner jacket. A strength member may be embedded within the inner jacket.

An apparatus (100) and method are provided for thermally processing substrates (108) held in a carrier (106). The apparatus (100) includes a vessel (101) having a top (134), side (136) and bottom (138), and a heat source (110) with heating elements (112-1, 112-2, 112-3) proximal thereto. The vessel (101) is sized to enclose a volume substantially no larger than necessary to accommodate the carrier (106), and to provide an isothermal process zone (128) extending throughout. In one embodiment, the bottom wall (138) includes a movable pedestal (140) with a bottom heating element therein (112-1), and the pedestal can be lowered and raised to insert the carrier (106) into the vessel (101). The apparatus (100) can include a movable shield (146) that is inserted between the pedestal (140) and the carrier (106) to shield the substrates (108) from the heating element (112-1) and to maintain pedestal temperature. A magnetically coupled repositioning system (162) repositions the carrier (106) during processing of the substrates (108) without use of a movable feedthrough into the volume enclosed by the vessel (101), and without moving the bottom heating element (112-1) in the pedestal (140).

Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and / or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

Provided herein are biomedical devices and methods of making and using biomedical devices for sensing and actuation applications. For example, flexible and / or stretchable biomedical devices are provided including electronic devices useful for establishing in situ conformal contact with a tissue in a biological environment. The invention includes implantable electronic devices and devices administered to the surfaces(s) of a target tissue, for example, for obtaining electrophysiology data from a tissue such as cardiac, brain tissue or skin.

Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.

An improved wire bonding process for copper-metallized integrated circuits is provided by a nickel layer that acts as a barrier against up-diffusing copper. In accordance with the present invention the nickel bath is placed and remains in hydrogen saturation by providing a piece of metal that remains in the nickel plating tank before and during the plating process.