41553 results about "Nanometre" patented technology

A water soluble semiconductor nanocrystal capable of light emission is provided, including a quantum dot having a selected band gap energy, a layer overcoating the quantum dot, the overcoating layer comprised of a material having a band gap energy greater than that of the quantum dot, and an organic outer layer, the organic layer comprising a compound having a least one linking group for attachment of the compound to the overcoating layer and at least one hydrophilic group space apart from the linking group by a hydrophobic region sufficient to prevent electron charge transfer across the hydrophobic region. The particle size of the nanocrystal core is in the range of about 12.ANG. to about 150.ANG., with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescende having quantum yield of greater than 10% in water.

Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same. A flowing aerosol is generated that includes droplets of a precursor medium dispersed in a gas phase. The precursor medium contains a liquid vehicle and at least one precursor. At least a portion of the liquid vehicle is removed from the droplets of precursor medium under conditions effective to convert the precursor to the nanoparticles or the matrix and form the multi-component particles.

A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.

A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Methods for forming nanostructures of various shapes are disclosed. Nanocubes, nanowires, nanopyramids and multiply twinned particles of silver may by formed by combining a solution of silver nitrate in ethylene glycol with a solution of poly(vinyl pyrrolidone) in ethylene glycol. Hollow nanostructures may be formed by reacting a solution of solid nanostructures comprising one of a first metal and a first metal alloy with a metal salt that can be reduced by the first metal or first metal alloy. Nanostructures comprising a core with at least one nanoshell may be formed by plating a nanostructure and reacting the plating with a metal salt.

A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

A carbon nanotube film structure includes at least two overlapped carbon nanotube films, with adjoining films being aligned in different directions. Each carbon nanotube film includes a plurality of successive carbon nanotube bundles aligned in the same direction. The carbon nanotube structure further includes a plurality of micropores formed by/between the adjoining carbon nanotube bundles. A method for fabricating the carbon nanotube film structure includes the steps of: (a) providing an array of carbon nanotubes; (b) pulling out, using a tool, one carbon nanotube film from the array of carbon nanotubes; (c) providing a frame and adhering the carbon nanotube film to the frame; (d) repeating steps (b) and (c), depositing each successive film on a preceding film, thereby achieving at least a two-layer carbon nanotube film; and (e) peeling the carbon nanotube film off the frame to achieve the carbon nanotube structure.

An electric-cigarette undertaking nanometer dimension fineness space heating pulverization to nicotine solution comprises a cigarette pole and a cigarette holder connected with the front end of the cigarette pole. The cigarette pole is a hollow rod shape cigarette pole welded with a plug at the back end. The intracavity of the cigarette pole is provided with a rechargeable battery, a liquid storage tank for storing nicotine solution, an imbibition liquid core arranged at the front end of the liquid storage tank and contacted with the nicotine solution, and a heater of space heating pulverization arranged inside the heating cavity positioned in the front part of the cigarette pole. The wall of the cigarette pole corresponding to the liquid storage tank is provided with a liquid inlet communicated with the liquid storage tank. Any place of the wall of the cigarette pole is provided with an electric heating switch. The center of the cigarette holder is provided with a hollow pipe which extends into the cigarette pole. The wall of front part of the cigarette holder is provided with a piezoelectric press sensor. The back end of the cigarette pole is provided with a recharging connection device which can charge the rechargeable battery through outer power. The piezoelectric press sensor is communicated with the rechargeable battery all the time. The electric heating switch, the piezoelectric press sensor and the rechargeable battery constitute a circuit loop. The invention has the advantages of convenient assembly and installation, easy carry, wide application and convenient use.

The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N₂O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causing incomplete reaction upon a gas phase reaction is applied to generate nano particle. The nano particle is then reacted to oxygen radical to form the insulating film including a plurality of nano voids. A low-dielectric insulating film that can be applied to the nano technology even in the existing LECVD equipment is formed.

Graphitic nanofibers, which include tubular fullerenes (commonly called "buckytubes"), nanotubes and fibrils, which are functionalized by chemical substitution, are used as electrodes in electrochemical capacitors. The graphitic nanofiber based electrode increases the performance of the electrochemical capacitors. Preferred nanofibers have a surface area greater than about 200 m2/gm and are substantially free of micropores.

Nano-architected/assembled solar cells and methods for their manufacture are disclosed. The solar cells comprise oriented arrays of nanostructures wherein two or more different materials are regularly arrayed and wherein the presence of two different materials alternates. The two or more materials have different electron affinities. The two materials may be in the form of matrixed arrays of nanostructures. The presence of the two different materials may alternate within distances of between about 1 nm and about 100 nm. An orientation can be imposed on the array, e.g. through solution deposition surfactant templation or other methods.

The performance of electro-wetting displays can be improved by: (a) providing a concealment member (112) which conceals the moving fluid (108) when that fluid (108) is confined to a small area; (b) using the moving fluid to cover one or more sections of a filter or reflector having differently-colored sections; (c) moving the moving fluid between the rear surface and a side surface of a microcell; (d) using as a substrate for a moving fluid a substrate resistant to wetting by the fluid but pierced by multiple conductive vias capped with a material wetted by the fluid; and (e) coloring the moving fluid with pigments or nanoparticles.

A transparent and conductive film comprising at least one network of graphene flakes is described herein. This film may further comprise an interpenetrating network of other nanostructures, a polymer and/or a functionalization agent(s). A method of fabricating the above device is also described, and may comprise depositing graphene flakes in solution and evaporating solvent therefrom.

This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

This invention relates to rigid porous carbon structures and to methods of making same. The rigid porous structures have a high surface area which are substantially free of micropores. Methods for improving the rigidity of the carbon structures include causing the nanofibers to form bonds or become glued with other nanofibers at the fiber intersections. The bonding can be induced by chemical modification of the surface of the nanofibers to promote bonding, by adding "gluing" agents and/or by pyrolyzing the nanofibers to cause fusion or bonding at the interconnect points.

A coated nanocrystal capable of light emission includes a substantially monodisperse nanoparticle selected from the group consisting of CdX, where x=S, Se, Te and an overcoating of ZnY, where Y=S, Se, uniformly deposited thereon, said coated nanoparticle characterized in that when irradiated the particles exhibit photoluminescence in a narrow spectral range of no greater than about 60 nm, and most preferably 40 nm, at full width half max (FWHM). The particle size of the nanocrystallite core is in the range of about 20 Å to about 125 Å, with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescence having quantum yields of greater than 30%.