13585 results about "Thermal expansion" patented technology

In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such thatthe direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel tothe direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.

A system for reprocessing flexible endoscopes having lumen therein. The reprocessing system deploys steam to disinfect and/or sterilize the endoscopes, and designs, components, and methods for reducing or balancing the reprocessing cycle time and the effects of thermal expansion and contraction on the endoscopes.

Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.

A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

The present invention provides methods, devices and device components for fabricating patterns on substrate surfaces, particularly patterns comprising structures having microsized and/or nanosized features of selected lengths in one, two or three dimensions. The present invention provides composite patterning devices comprising a plurality of polymer layers each having selected mechanical properties, such as Young's Modulus and flexural rigidity, selected physical dimensions, such as thickness, surface area and relief pattern dimensions, and selected thermal properties, such as coefficients of thermal expansion, to provide high resolution patterning on a variety of substrate surfaces and surface morphologies.

An object of the present invention is to provide a honeycomb filter for purifying exhaust gases which makes it possible to alleviate a thermal stress generated due to occurrence of a local temperature change and which is less likely to generate cracks and superior in strength and durability, an adhesive that has a low thermal capacity and is capable of alleviating the thermal stress, a coating material that has a low thermal capacity with a superior heat insulating property and is capable of alleviating the thermal stress, and a manufacturing method of the honeycomb filter for purifying exhaust gases that can improve precision in the outside dimension, and reduce damages in the manufacturing processes.

The present invention relates to a honeycomb filter for purifying exhaust gases, having a structure in that a plurality of column-shaped porous ceramic members, each having a number of through holes that are placed side by side in the length direction with partition wall interposed therebetween, are combined with one another through adhesive layers so that the partition wall that separate the through holes are allowed to function as a filter for collecting particulates, and in this structure, the thermal expansion coefficient α_L of the adhesive layer and the thermal expansion coefficient α_F of the porous ceramic member are designed to have the following relationship:

0.01<|α_L−α_F|/α_F<1.0.

A light emitting device has: a light emitting element; a lead that is electrically connected to the light emitting element at its one end and serves as a terminal to supply a power source to the light emitting element; a metal base that the light emitting element is mounted thereon and radiates heat of the light emitting element; and a sealing member that is of transparent resin or glass and covers the light emitting element. The lead is secured to the metal base by a heat-resisting insulating member with a thermal expansion coefficient nearly equal to that of the metal base.

A micro-actuator is comprised of a piezoelectric motor mounted on a flexure tongue with offsetting hinges, to perform a fine positioning of the magnetic read/write head. The substantial gain in the frequency response greatly improves the performance and accuracy of the track-follow control for fine positioning. The simplicity of the enhanced micro-actuator design results in a manufacturing efficiency that enables a high-volume, low-cost production. The micro-actuator is interposed between a flexure tongue and a slider to perform an active control of the fly height of the magnetic read/write head. The induced slider crown and camber are used to compensate for thermal expansion of the magnetic read/write head, which causes the slider to be displaced at an unintended fly height position relative to the surface of the magnetic recording disk. The enhanced micro-actuator design results in reduced altitude sensitivity, ABS tolerances, and reduced stiction. The controlled fly height of the magnetic read/write head prevents a possibility of a head crash, while improving the performance and data integrity.

Chip stacks with decreased conductor length and improved noise immunity are formed by laser drilling of individual chips, such as memory chips, preferably near but within the periphery thereof, and forming conductors therethrough, preferably by metallization or filling with conductive paste which may be stabilized by transient liquid phase (TLP) processes and preferably with or during metallization of conductive pads, possibly including connector patterns on both sides of at least some of the chips in the stack. At least some of the chips in the stack then have electrical and mechanical connections made therebetween, preferably with electroplated solder preforms consistent with TLP processes. The connections may be contained by a layer of resilient material surrounding the connections and which may be formed in-situ. High density circuit packages thus obtained may be mounted on a carrier by surface mount techniques or separable connectors such as a plug and socket arrangement. The carrier may be of the same material as the chip stacks to match coefficients of thermal expansion. High-density circuit packages may also be in the form of removable memory modules in generally planar or prism shaped form similar to a pen or as a thermal conduction module.

A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by flexible side walls. The flexible suspension minimizes mechanical stress due to thermal expansion of the gas distribution plate. In another aspect, the suspension provides thermal isolation between the gas distribution plate and other components of the chamber.

The present invention provides an optical fiber in which the transmission loss increase is suppressed even under a high-humidity condition or under a water-immersed condition. A colored optical fiber (22) according to an embodiment of the present invention is a colored optical fiber (22) formed by applying a colored layer to an optical fiber (14) including a glass optical fiber coated with at least a double-layered coating layer of a soft layer and a hard layer, and the ratio of thermal expansion coefficient between the coating layer after the colored layer of the colored optical fiber (22) is applied and the coating layer of the optical fiber (14) before the colored layer is applied is 0.87 or more. Furthermore, an optical fiber ribbon (32) according to another embodiment of the present invention is an optical fiber (32) formed by arranging a plurality of the colored optical fiber (22) in the form of a plane and coating them all together with a ribbon resin and the ratio of thermal expansion coefficient between the coating layer after the colored layer of the colored optical fiber (22) is applied and the coating layer of the optical fiber before the colored layer is applied is 0.90 or more.

A touch sensing catheter having a strain sensor assembly that may resolve the magnitude and direction of a force exerted on a distal extremity of the catheter, the strain sensor assembly being substantially insensitive to bulk temperature changes. A deformable structure having a plurality of optical fibers associated therewith that are strained by the imposition of a contact force transferred thereto. The optical fibers cooperate with the deformable structure to effect variable gap interferometers, such as Fabry-Perot resonators, that vary in operative length when a force is exerted on the deformable structure. The strain sensor assembly is rendered insensitive to bulk temperature changes by matching the coefficient of thermal expansion of the deformable body with that of the optical fibers. The strain sensor assembly may also be configured to mitigate the effects of thermal gradients using various thermal isolation techniques.

A semiconductor package and method of producing the same has a semiconductor die having a first face and a second face. A coating material is coupled to the second face of the semiconductor die. A substrate having a cavity is provided wherein the semiconductor die is placed within the cavity. An encapsulant is used to encapsulate the second face of the semiconductor die placed in the cavity. Connection members are provided to couple the semiconductor die and the substrate in order to transfer signals between the semiconductor die and the substrate. Terminal members are couple to the substrate to connect the semiconductor package to an external device. In the semiconductor package, a thermal expansion coefficient of the coating material C and a thermal expansion coefficient of the encapsulant E should be approximately equal in value in order to limit the problems associated with warpage.

A susceptor for use in a deposition apparatus includes a recess in which a wafer is received, and a stress-reducing bumper disposed along the side of the recess. The stress-reducing bumper is of material having ductility at a relatively high temperature. Therefore, when the wafer contacts the stress-reducing bumper, such as may occur due to thermal expansion of the wafer during processing, the force of the impact on the wafer is minimized by an elastic deformation of the stress-reducing bumper. As a result, defects, such as slip dislocations at the outer peripheral edge of the wafer, are prevented.

A structure for use in high temperature applications and including a porous ceramic material consisting essentially of about 50-90 percent by weight iron or magnesium stabilized aluminum titanate (AlTiO5) and about 10-50 percent by weight strontium feldspar (SrO.Al2O3.2SiO2), and having a coefficient of thermal expansion over a temperature range from room temperature to 1000° C. of about -10x10-7/° C. to +15x10-7/° C., a heat capacity at 500° C. greater than 3.2 J/cm3K, a porosity of about 15-50 percent by volume, preferably 40-50 percent by volume, and a median pore size of about 5-50 micrometers, preferably 8-15 micrometers. The structure is especially useful as a diesel exhaust particulate filter.

Thermally-stable polycrystalline diamond materials of this invention comprise a first phase including a plurality of bonded together diamond crystals, and a second phase including a reaction product formed between a binder/catalyst material and a material reactive with the binder/catalyst material. The reaction product is disposed within interstitial regions of the polycrystalline diamond material that exists between the bonded diamond crystals. The first and second phases are formed during a single high pressure/high temperature process condition. The reaction product has a coefficient of thermal expansion that is relatively closer to that of the bonded together diamond crystals than that of the binder/catalyst material, thereby providing an improved degree of thermal stability to the polycrystalline diamond material.