The invention relates to the technical field of third-generation grid-controlled power
semiconductor devices, and discloses a digital closed-loop grid active real-
time control driving device, which comprises a sampling element, a control element and an execution element, the input end of the sampling element is connected with a SiC
MOSFET (
Metal-
Oxide-
Semiconductor Field Effect Transistor) device, the output end of the sampling element is connected with the control element, the control element is connected with the execution element, and the sampling element is connected with the control element. The output end of the execution element is connected with the SiC
MOSFET device, the control element receives an analog sampling
signal of the sampling element, the analog sampling
signal is processed to obtain an analog modulation
signal, the analog modulation signal is sent to the execution element, and the execution element processes the analog modulation signal to regulate and control the gate-source
voltage of the SiC
MOSFET device. According to the digital closed-loop grid active real-
time control driving device, in the submicrosecond transient process of a SiC MOSFET device, high-speed response and accurate control of grid
active control driving are achieved based on existing
software and hardware conditions, and therefore quantitative regulation and control of peak stress and switching loss in the transient process of the device are achieved.