34 results about "Power degradation" patented technology

The invention discloses a test method of PID (Potential-Induced Degradation) of a solar cell module. The test method comprises the following steps of: (1) testing and recording initial data of a tested solar cell module; (2) installing the tested solar cell module in a high-temperature and low-temperature experimental environment box and carrying out insulated treatment between the tested solar cell module and the high-temperature and low-temperature experimental environment box; (3) polarly connecting the anode and the cathode of the tested solar cell module, which are subjected to short-circuited connection, with the cathode of high-voltage loading equipment, and connecting a frame of the solar cell module with the anode of the high-voltage loading equipment; (4) starting the high-temperature and low-temperature experimental environment box, starting the high-voltage loading equipment and debugging the high-voltage loading equipment to the output voltage value of 600-1000V, and simultaneously starting a current monitor for carrying out electric leakage monitoring; (6) testing and recording final data of the tested solar cell module; (7) comparing the initial data with the final data of the tested solar cell module and evaluating power degradation; and (8) finishing the test.

The invention provides a method for determining the stationary phase of an accelerometer based on dual-parameter accelerated degradation data. The method is based on the assumption that the zero deviation and scale factors of the accelerometer degrade commonly and meet a power degradation law, the assumption that a high-temperature accelerated degradation test of the accelerometer meets the consistency condition of a failure mechanism, and the assumption that an accelerated model is an Arrhenius equation. The method comprises the following steps of: 1, establishing a degradation track model of the zero deviation and the scale factors; 2, estimating the pseudo-stationary phase of the zero deviation and the scale factors; 3, establishing a stationary phase accelerated model of the zero deviation and the scale factors; and 4, establishing a comprehensive reliable model of the stationary phase of the accelerometer, and determining the stationary phase of the accelerometer under the reliability. In the method, the influence of the zero-deviation degradation and the scale factors on the stationary phase of the accelerometer is taken into consideration simultaneously, horizontal information among different test temperatures is utilized fully by an integral maximum likelihood estimation process, so that the condition of the stationary phase of the accelerometer can be better describedunder the condition of dual-parameter common degradation, and the estimation accuracy is improved effectively.

A clock gating mechanism controls power within an integrated circuit device. One or more clock gating circuits are configured to couple a system clock to a different portion of the integrated circuit device. A logic circuit applies an enabling signal to one of the clock gating circuits to control whether the system clock passes through the clock gating circuit to a portion of the integrated circuit device associated with the clock gating circuit. A plurality of scan flip-flops is configured to provide a binary code to the logic circuit, where the binary code indicates to the logic circuit that the enabling signal should be applied to the clock gating circuit. One advantage of the disclosed technique is that power droop during at-speed testing of a device is reduced without significantly increasing the quantity of test vectors or reducing test coverage, resulting in greater test yields and lower test times.

Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (V_DS) of about 56 volts, a gate to source voltage (V_gs) of from about −8 to about −14 volts and a temperature of about 140 ° C. for at least about 10 hours.

A precision measurement unit (PMU) includes a force amplifier selectively providing either a forcing voltage or a forcing current to a device under test via an output force terminal. A low limit voltage clamp and a high limit voltage clamp are operatively coupled to the output force terminal. The low and high limit voltage clamps are each responsive to user programming to define respective low and high voltage limits at the output force terminal. Upon detection of a reversal of said user programming, the operation of the low and high limit voltage clamps is disabled. More particularly, a comparator is adapted to compare the low and high voltage limits and provide a corresponding disabling signal if the high voltage limit is lower than the low voltage limit.

Apparatus and methods for self-cleaning of optical elements in sealed environments over a wide range of operating optical frequencies prevent long-term power degradation by introducing low-pressure backfill of a reactive gas such as oxygen into a vacuum chamber containing the optical elements. The backfill pressure is preferably between 10⁻⁴ torr and 10 torr, and generally between 0.1 torr and 2 torr at room temperature. The vacuum chamber may be continuously evacuated and backfilled, or may be sealed after evacuation and backfill is performed.

The invention discloses a laser welding power control device which comprises a master controller and a laser. The master controller is provided with an analog voltage output port, a PWM modulating pulse output port and a plurality of IO ports. The master controller is connected with the laser through the analog voltage output port, the PWM modulating pulse output port and the IO ports. The invention further discloses a laser welding power control method. The method comprises the steps that the welding power pulse width of the laser within the power increase stage time is adjusted through the master controller, and the welding power pulse width of the laser is sequentially increased within the power increase stage time; and the welding power pulse width of the laser within the power decrease stage time is adjusted through the master controller, and the welding power pulse width of the laser is sequentially decreased within the power decrease stage time. Through the adoption of the laser welding power control device and method, gradual increase and decrease of the PWM pulse width can be effectively adjusted and controlled, the aims of controlling arcing and arc suppression power gradual changing are achieved, and the overburning phenomenon generated when the laser is used for laser welding is effectively avoided.

An RF transmitter suitable for Bluetooth transmissions has an IF modulator and an RF modulator, the IF modulator being arranged to use a very-low-IF-frequency, smaller than half the channel bandwidth, such that spurious unwanted modulation components fall in other channels having a channel number within one or two of a channel being transmitted. This can reduce the VCO pulling problem and reduce adjacent channel power degradation compared to using higher IF frequencies. The local oscillator PLL's fractionality is used in order to optimize the adjacent power frequency plan by selecting the most appropriate IF frequency. For the Bluetooth application, the IF frequency is <500 kHz, and the main non-filtered spurious components (1LO·xBB with x: −3, −2, . . . , +3) image, carrier, pulling, for both 0 and 1 FM signals, are positioned in frequency bands of adjacent channels.

A silicon oxide film formed on a compound semiconductor substrate is evaluated by estimating the quantity of silicon-silicon bonds operating as electron traps in the silicon oxide film from a peak with a wave number of 880/centimeter in the Fourier-transform infrared spectrum of the silicon oxide film. This peak, which is an indicator of silicon-silicon stretching vibration, provides an index of expected power performance degradation during operation of field-effect transistors incorporating the silicon oxide film as an interlayer. Power degradation can be reduced by fabricating the semiconductor device under conditions that reduce the estimated quantity of silicon-silicon bonds, without the need to measure the power degradation.

The invention provides a high-temperature electric heating coating and a preparation method thereof. The high-temperature electric heating coating contains the following components by weight percent: 30%-60% of an organic carrier, 5%-15% of nano-conductive carbon black, 5%-15% of graphite, 0.1%-15% of an aid and 10%-40% of a solvent, wherein the organic carrier contains the following components by weight percent: 30%-40% of a solvent, 15%-30% of phenolic epoxy resin, 15%-35% of bisphenol A epoxy resin, 3%-10% of a dicyandiamide latent curing agent and 0.1%-5% of substituted urea curing accelerator. By utilizing the formula, the prepared high-temperature electric heating coating has the beneficial effects that the long-term use temperature is 100-150 DEG C, the heating temperature is uniform, and the power degradation does not occur after the long-term use. Besides, the preparation process is simple, free from pollution, low in cost and suitable for large-scale industrial production.

The invention provides a photovoltaic module capable of lowering power degradation. The photovoltaic module comprises a front plate, a first packaging layer, a solar cell, a second packaging layer and a back plate, wherein the front plate, the first packaging layer, the solar cell, the second packaging layer and the back plate are successively overlaid from top to bottom; the solar cell is a gallium-doped cell, and the first packaging layer and/ or the second packaging layer is a polyolefin membrane. The gallium-doped cell is adopted to serve as the solar cell of the photovoltaic module, early stage light wane caused by a boron-oxygen complex generated in the prior art can be avoided, and the early stage power degradation of the photovoltaic module is lowered. The polyolefin membrane is adopted as the packaging layer, so that the photovoltaic module has good watertightness, low moisture transmittance and high volume resistivity. Compared with the later stage aging degradation of a conventional module in the prior art, the later stage aging degradation of the photovoltaic module is reduced by about 50%, no PID (Potential induced Degradation) phenomena are in the presence during the service life of the photovoltaic module, and the problem that the power of the module is greatly degraded due to PID influence can be avoided.

The invention discloses a motorcycle water-cooling control system and a motorcycle with the motorcycle water-cooling control system. The motorcycle water-cooling control system comprises a radiator, afirst cavity and an annular cooling box, wherein the first cavity is formed in an engine radiator, and the annular cooling box is arranged on a front shock absorber in a sleeving mode. The annular cooling box comprises a second cavity, wherein the second cavity communicates with the first cavity and the radiator through a pipeline system. A control system controls the pipeline system to be connected and disconnected. The invention further discloses the motorcycle with a water cooling system. The motorcycle comprises the motorcycle water-cooling control system. By the adoption of the design, the structure is novel, implementation is easy, the heat exchange capacity of the water cooling system is greatly enhanced, the water cooling system can conduct sufficient cooling on engine coolant, and therefore the effect that the water cooling system conducts heat dissipation on an engine of the motorcycle is improved, the problems that due to the fact that the engine of the motorcycle overheats, detonation happens, the power is reduced, and the noise is increased are solved, the comfort and the using performance of the motorcycle are effectively improved, and the service life of the motorcycle is effectively prolonged.

To control a power network having a photovoltaic system, a time curve of a light radiation of the photovoltaic system is determined, wherein an increase of the time curve in relation to a reference curve of the light radiation is detected. As a result of the detection of the increase, a preparatory measure is then introduced to prepare the power network for an upcoming power drop of the photovoltaic system.

The invention discloses a photovoltaic module residual life prediction method and prediction system. The method comprises the steps that the output power degradation amount of a target photovoltaic module at the current moment is acquired; updating preset model parameters according to the output power degradation amount; inputting the updated model parameters into a residual life prediction model, and outputting a residual life distribution result of the target photovoltaic module at the current moment; according to the method, when the degradation characteristics of the target photovoltaic module are described, the non-monotonicity, randomness and individual difference presented by the degradation of the photovoltaic module are considered, and the result can be updated by using the real-time output power degradation amount data, so that the accuracy of predicting the residual life of the photovoltaic module is improved.

The invention provides a lossless screening method and device of the radiation resisting capacity of a GaN light-emitting diode. The method comprises the steps that the output luminous power Pout and 1/f noise amplitude B of a random subsample device are acquired; the output luminous power Pout' of the random subsample device after a radiation experiment is acquired; the degradation amount delta Pout is calculated to be equal to Pout'-Pout based on Pout and Pout'; the measured 1/f noise amplitude B serves as an information parameter to output the light power degradation amount delta Pout to serve as a radiation performance parameter, a linear regression method is adopted for setting up a linear regression equation (the formula is shown the specification) between B and delta Pout, a coefficient vector (the formula is shown in the specification) of delta Pout and the information parameter B in the linear regression equation is calculated, and a lossless screening regression prediction equation between the information parameter B and the radiation performance parameter (the formula is shown in the specification) is set up; the radiation performance of a single device is predicted through the lossless screening regression prediction equation. According to the method and device, on the premise that components and parts are not damaged, the GaN light-emitting diode components and parts can be accurately and efficiently screened.

The invention relates to a process for producing a self-cooling solar back plate. The solar back plate produced by using the process comprises a PET (Polyethylene Terephthalate) base material, a reflecting layer and a coating. The solar back plate is simple in structure and convenient to use, the overall temperature of the back plate can be effectively reduced, the problem of power decline caused by over high temperature is avoided, the overall power is improved, the rate of material aging caused by high temperature difference is retarded, the service life of the solar back plate is prolonged, and the photoelectric conversion efficiency of the solar back plate is improved. The reflecting layer can reflect light irradiated to the back plate, thereby avoiding self temperature rise of the solar back plate due to light absorption and simultaneously improving the light absorption rate of the solar back plate.

The invention relates to a power distribution device for improving active power of a series electric tracer heating system, which is used for correcting reduced power of an underground long-distance pipeline due to electromagnetic inductance. The device comprises an electric control cabinet (2), a voltage-regulating transformer (3) and a power-regulating control cabinet (4), the electric control cabinet (2) and a power supply (1) are connected with the voltage-regulating transformer (3) which is connected with the power-regulating control cabinet (4), and the power-regulating control cabinet (4) is accessed into a load (5). The invention can improve the current of the load to a preset value by improving the secondary voltage of the voltage-regulating transformer and adding power regulators under the condition of no change of an actual system Q value, thereby achieving the purpose of improving active power.

The invention provides a control method and control unit of a driving circuit of an electric vehicle as well as the electric vehicle. The driving circuit comprises a boost unit and the control unit, wherein the boost unit is used for receiving the output voltage of a power battery and used for outputting booster voltage to a motor; and the control unit is used for outputting a control signal to the boost unit. The control method comprises the following steps of obtaining the running state of the electric vehicle, wherein the running state comprises a required output voltage; and judging operating state, wherein the operating state judging step comprises the following steps of judging whether the required output voltage is greater than a preset value, if the required output voltage is greater than or equal to the preset value, enabling the boost unit to start operating, enabling the boost unit to output the booster voltage to the motor, and if the required output voltage is smaller thanthe preset value, enabling the boost unit to stop operating. According to the control method and the control unit disclosed by the invention, through obtaining the running state, the system efficiency is improved, so that the problems of reduction of the torque of high-speed running of the motor, and the weak magnetism heating of a permanent magnet synchronous motor are effectively solved, and the problem that the high-speed output power of the motor is reduced caused by the reduction of the battery voltage can also be solved.

The invention discloses an application method of a computer intelligent control socket system. The application method comprises the steps that: step 1, a computer and peripheral equipment are connected to corresponding jacks, wherein the computer is connected with the main control jacks, and the peripheral equipment is connected to the controlled jacks; step 2, when the computer is in use, a main control circuit detects that power of the computer is increased after the computer is started up, and the main control circuit controls a controlled circuit to turn on the peripheral equipment in a delayed manner; step 3, and when the computer is in a shut-down or standby mode, the main control circuit detects that power of the computer is decreased to a threshold value, and then turns off the peripheral equipment in a delayed manner by controlling the controlled circuit. According to the application method of the computer intelligent control socket system, as long as the computer is shut down, a user does not need to worry about forgetting to turn off the peripheral equipment, and the peripheral equipment does not need to be turned on one by one when starting up the computer, thereby being capable of saving household electricity intelligently and effectively.