The invention discloses a
system and a method for testing the dynamic
on resistance of a power GaN device. The testing
system comprises a low-
voltage power supply, a booster circuit, a
constant current source circuit, a clamping circuit and a
driving circuit, the low-
voltage power supply is connected with the booster circuit; the test module comprises a switch tube QC and tested device groups Q1, Q2... Qn, the drain
electrode of the control tube QC is connected with one side of the booster circuit, the source
electrode of the control tube QC is connected with the drain
electrode of the GaN device Q1, the source electrode of the GaN device Q1 is connected with the drain electrode of the GaN device Q2, the source electrode of the GaN device Q2 is connected with the drain electrode of the GaN device Q3,..., and so on, the source electrode of the GaN device Qn-1 is connected with the drain electrode of the GaN device Qn, and the source electrode of the GaN device Qn is grounded; the grid electrode of the switching tube QC and the grid electrodes of the tested device groups Q1, Q2... Qn are connected with the
driving circuit; source electrodes and drain electrodes of the tested device groups Q1, Q2... Qn are respectively connected in parallel with resistors R1, R2... Rn. The tested device groups Q1, Q2... Qn are connected with the
constant current source circuit; two ends of the resistors R1, R2... Rn are respectively connected with a clamping circuit, and the clamping circuit is connected with a
data acquisition system. The reliability of measuring the dynamic on-resistance of the
gallium nitride device is improved.