1089 results about "Reticle" patented technology

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

The invention discloses a holographic sight based on a volume Bragg grating, and belongs to the field of holographic optics. The holographic sight comprises a sight housing, a semiconductor laser, a wave-locking element, a beam expander, an off-axis parabolic reflector and a holographic grating. The wave-locking element is a reflective volume Bragg grating, and the holographic grating is a transmissive volume Bragg grating. Both have excellent selectivity for the wavelength and incident angle of light. At the same time, both are made of photothermorefractive glass, which is less affected by the external temperature and can effectively reduce the deviation of the output wavelength, thereby reducing the deviation of the holographic grating mark image and increasing the accuracy and stability of the holographic sight. The photothermorefractive glass has a high refractive index modulation degree, which achieves a higher holographic diffraction efficiency, making the displayed holographic image brighter and more recognizable. In addition, the components of the beam expander and the off-axis parabolic reflector are used to shorten the optical path and reduce the overall structural size of the sight.

Provided is an optical sight with a non-optical rear sight element. The optical sight has a housing, an optical screen element, a light source that projects a sighting reticle image onto a surface of the screen element. A non-optical rear sight element is positioned on the housing forward of the screen element. The non-optical rear sight element may be selectively removable.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses a high-precision semi-automatic assembling and adjusting method for a laser radar transmitting and receiving module. Each optical element of the MEMS laser radar transmitting and receiving module can be quickly and conveniently assembled and adjusted by using simple measuring equipment such as an optical reticle, an optical guide rail, a semi-transparent and semi-reflecting mirror, an infrared camera and a phase shift interferometer. The installation positions of optical lenses of the transmitting module and the receiving module are detected in real time by using a phase shift interferometer and a computer-aided adjustment method; an optical reticle on an optical guide rail is automatically moved, and an infrared camera is adopted to detect the contour of a light spot, so that the installed and adjusted lens can be accurately adjusted in real time to ensure that the collimation precision of a transmitting module meets the requirement; after the transmit-receive module is installed, the reflection calibration plate on the optical guide rail is moved to calibrate the reflection intensity of the MEMS laser radar transmit-receive module. According to the method, semi-automation of an MEMS laser radar transmitting and receiving module assembling and adjusting process can be realized, and the assembling and adjusting efficiency of the MEMS laser radar is improved while the assembling and adjusting precision of each component is effectively guaranteed.

According to the multi-beam confocal mask defect detection system and method based on the fiber laser array, a multi-point scanning light field is obtained on the basis of the fiber laser array to serve as an illumination light source, the scanning light field can be regulated and controlled on the basis of arrangement of the laser array, and through the combined action of a motion table and a multi-face rotating mirror, the defect of the multi-beam confocal mask is detected. Rapid and accurate mask two-dimensional scanning imaging is achieved, and high-resolution detection of mask defects is achieved on the basis of a confocal microscopic imaging method in cooperation with a high-power microscope objective and a photomultiplier. Compared with a traditional point scanning type mask defect detection system, the system has the advantages that the detection resolution is high, the scanning speed is high, a multi-point scanning light field can be freely regulated and controlled, and no extra diffraction optical element needs to be introduced.

The invention discloses a layout generation method for load effect compensation and a related device, which are applied to the technical field of photoetching and comprise the following steps: acquiring photomask data; carrying out grid division on the mask graph according to the photomask data, and determining layout density in each grid; comparing the layout density of each grid with a target density, and determining a density difference value corresponding to each grid; determining a virtual graph corresponding to each grid according to the density difference value; and adding a corresponding virtual graph in a layout area corresponding to the grid to form a compensated mask plate graph. By performing grid division on the mask plate graph, calculating the specific layout density in each grid and adding the corresponding virtual graph to the layout area corresponding to the grid according to the difference value between the layout density and the target density, the graph density of the layout area in each grid can be effectively compensated, so that the load effect of each area in the layout is balanced, and the performance of the mask plate is improved. And the etching uniformity is improved.

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

Systems, devices, and methods are disclosed to correct aimpoint of a system of a weapon and affixed digital weapon sight. The method employs the components of a digital weapon sight configured together for a process of sensing of a ballistic event, storing of digital imagery data before and after a shot or series of shots, and then the performing of an image registration algorithm, via a cross-correlation type function. The image registration determines the misalignment between the images as a Cartesian shift, and aimpoint of subsequent shooting is corrected through application of adjusted reticle symbology or adjusted image sensor windowing. Preprocessing methods for enhancing image registration algorithm accuracy are presented.

The invention discloses a high-precision temperature control method and system for a photoetching machine, and belongs to the technical field of photoetching machine temperature control. The method comprises the following steps: acquiring a temperature array on the lower surface of a mask, heat flux density distribution of a bearing surface of an exposure table and a hot pressure difference signal of an air floating layer, carrying out feature coding, and constructing a high-dimensional thermal coupling situation feature matrix; a dynamic thermal weight correlation map is generated based on the matrix, exposure key nodes serve as anchor points, and explicit modeling is conducted on nonlinear thermal paths among the nodes through a graph neural network; further calculating the spatial gradient change rate of the heat flux per unit area of the mask region according to the thermal weight map, and mapping the spatial gradient change rate to an exposure table temperature control array to generate a nonlinear control function curved surface; and dynamically adjusting power output and response delay parameters of the local heating unit according to the control function, so that dynamic thermal field equalization with nanoscale precision can be realized, thermal drift is effectively inhibited, and the photoetching imaging quality and the yield of an advanced process are improved.

The invention relates to the technical field of semiconductor detection, in particular to a real-time automatic focusing system and a detection system formed by the same. The real-time automatic focusing system comprises a first illumination subsystem, a second illumination subsystem, a beam combining element, a first mask plate, a second mask plate, a collimating lens group, an objective lens, a first beam splitter, a second beam splitter, a moving mechanism, a first detection subsystem and a second detection subsystem. A focusing energy signal is calculated according to the imaging light energy received by the first detection subsystem and the second detection subsystem, the moving mechanism is controlled according to the focusing energy signal to adjust the position of the objective lens or the to-be-detected sample, and real-time focusing of the to-be-detected sample is achieved. According to the invention, an energy difference mode is utilized to eliminate the influence on the automatic focusing system due to different reflectivity of patterns on the surface of the to-be-tested sample and the etching depth of the patterns, and real-time focusing of the to-be-tested sample is realized by adjusting the position of the objective lens or the to-be-tested sample.

To provide technology suitable for performing highly precise measurement of optical characteristics.SOLUTION: An evaluation method for evaluating an optical characteristic of a projection optical system is provided. The evaluation method includes a measurement step of illuminating a test reticle having a test pattern disposed on an object plane of the projection optical system, and measuring an amount of positional deviation of an image of the test pattern formed on an image plane of the projection optical system, and an estimation step of estimating the optical characteristic of the projection optical system based on a result of the measurement, wherein in the estimation step, the optical characteristic is estimated using a polynomial model including a regularization term.SELECTED DRAWING: Figure 2

A weapon system has an optical sight mounted to a weapon and a frame with a sight window that is configured to superimpose a reticle that is visible through the sight window in a first focal plane. An optoelectronic device is mounted to the weapon and includes an imager with a sensor array and a display device. An image processor is configured to receive image data captured by the sensor array and process the image data to generate a subset image that is received from a select region of the sensor array. The select region of the sensor array defines a second focal plane. A controller is configured to receive an input from an operator, and in response to the input, to select the select region of the sensor array for aligning the second focal plane with the first focal plane.

The utility model belongs to the technical field of optical gauges, and particularly discloses a device for calibrating an optical axis of a binocular low-light night vision device. A double-tube front mirror of the device is fixed to the upper portion of an adjusting frame, a field instrument is fixed to the upper portion of a supporting frame, the supporting frame, a supporting seat and the adjusting frame are sequentially arranged on a workbench, a cross reticle I is arranged in the field instrument, a base I of the supporting seat is placed on the surface of the workbench, a top plate is fixed to the top end of a connecting handle through the connecting handle, and a connecting plate is fixed to the upper surface of the top plate. The top of the connecting plate is provided with a dovetail groove which can be in sliding connection with a dovetail joint at the bottom of the binocular low-light night vision device, and the extending direction of the dovetail groove is parallel to the optical axis of the field instrument. According to the utility model, the binocular low-light night vision device can be directly clamped in the dovetail groove in a sliding manner through the dovetail joint for positioning, the calibration of the parallelism of the optical axis is realized through the cooperation of the field instrument and the double-tube front mirror, and the calibration device has the characteristics of simple structure, convenience in calibration, high result precision and reliability in positioning.

The present disclosure is directed to a reticle assembly having a reticle and a pellicle attached to a pellicle support frame positioned on the reticle and includes a sensor assembly having optical and sensor components, which monitor the pellicle. The optical components and the sensor components of the sensor assembly may be coupled to a controller, which may be further coupled to one or more semiconductor process tools.

The invention provides a CMOS-MEMS (Complementary Metal Oxide Semiconductor-Micro-Electro-Mechanical System) flow and gas thermal conductivity integrated sensor as well as a preparation method and application thereof, and belongs to the field of sensors. The thermal insulation structure is designed between the thermal flow sensor and the gas thermal conductivity sensor, so that external thermal interference and thermal interference among different internal sensors are reduced, related thermophysical parameters of gas are detected at the same time, the flow is corrected, and the detection accuracy is improved. And the performance of the flow sensor is further improved so as to meet the requirements of flow detection and gas parameter detection in a more complex environment. When the sensor is prepared, a Post-CMOS (Complementary Metal Oxide Semiconductor) process without a mask is adopted, so that a complicated photoetching step is avoided, and the post-processing efficiency of the whole Post-CMOS is greatly improved. According to the sensor disclosed by the invention, a CMOS-MEMS (Complementary Metal Oxide Semiconductor-Micro-Electro-Mechanical System) process of monolithic integration and integrated preparation molding of various sensors is realized through reasonable process design.

A weapon sight includes a chassis and an optical system. The chassis is coupleable to a firearm. The optical system is coupled to the chassis and includes a light source, a collimator, a mirror, a diffraction grating, and a hologram. The light source is a light emitting diode (LED) that emits light. The collimator receives the light from the light source and reflects the light in parallel rays. The folding mirror receives the light from the collimator and reflects the light in the parallel rays. The diffraction grating receives the light from the folding mirror and diffracts the light. The hologram receives the light from the diffraction grating to output a reticle visible by a user of the weapon sight.

The embodiment of the invention relates to the field of photomasks, and provides a photomask protective film frame and a preparation method thereof, the photomask protective film frame comprises a frame main body made of a metal material and a coating formed on the surface of the frame main body, and the photomask protective film frame is characterized in that the coating is at least composed of carbon black, silicon dioxide particles and organic dye. The nanoscale carbon black in the coating has a high light absorption coefficient, fills gaps of dye molecules and forms a continuous light absorption network, the organic dye enhances absorption of light with specific wavelength through a molecular structure conjugated system, and the nanoscale carbon black and the organic dye form a composite function of broad-spectrum absorption and accurate waveband adjustment, so that more than 95% of light is absorbed in a broad-waveband range, light reflection on the surface of the frame is reduced, and the light absorption efficiency is improved. Pattern distortion caused by reflected light in the photoetching process is avoided, silicon dioxide is embedded into an organic dye matrix, silicon dioxide gaps are filled with carbon black particles, the porosity of the coating is reduced, the wear resistance of the coating is improved, and the cracking risk of the coating is reduced. Optical absorption, wear resistance and weather resistance are synchronously improved.

The invention provides a method for correcting the layout of a photomask, and is applied to the technical field of semiconductors. According to the method and the device, a plurality of pixel graphs of which the interval lengths do not meet a preset range are screened out based on the interval lengths between adjacent pixel graphs, and then the key sizes of the screened pixel graphs are multiplied by N times according to different proportions, so that a plurality of first test photomasks are constructed; and then determining the optimal magnification ratio of the initial photomask based on the combination of the wafer data, the incremental limit suboptimal solution and the two-side clamping theorem, namely obtaining the target photomask, so that the unexpected effects are that the optimal magnification ratio of each pixel graph in the initial photomask can be rapidly determined only by using a small part of pixel graphs in the initial photomask, and the target photomask is obtained. The manufacturing efficiency and quality of the photomask and the space utilization rate of the photomask and the wafer are improved, and the manufacturing cost of the photomask is reduced.

An imaging optic (10) for projection lithography serves to image an object field (5), in which a reticulum to be imaged can be arranged, onto an image field (11), in which a substrate to be exposed can be arranged. The imaging optic (10) has a plurality of mirrors (M1 to M8) for guiding imaging light (16) along an imaging beam path from the object field (5) to the image field (11). The image-side numerical aperture of the imaging optic (10) is greater than 0.75. The optical conductivity of the imaging optic (10) is greater than 45 mm. 2 The result is an imaging optic whose usability for a projection exposure system is improved.

The invention discloses a long-distance snapshot type spectral imaging radar system. The system comprises a light source, a projection objective lens, a photographic lens, a random mask, a grating, an SPAD and the like. Light emitted by the light source is projected to the surface of a target through the projection objective, and reflected light is sequentially processed by all the components and then detected by the SPAD. The SPAD is utilized to realize single photon detection, and the problem of spectrum detection at a long distance or under weak light and dark light is solved. Through specific light path design, a random mask plate and a grating are combined, and a light field is modulated and split. By means of a mathematical algorithm, for example, distance information is obtained based on multiple times of detection and statistics of arrival time, modulation, dispersion, integral operation and the like are carried out on a spectrum matrix, simultaneous detection of a target spectrum and the distance information is achieved, and compared with the prior art, more comprehensive and high-quality information can be obtained in a complex environment.

A zoom optics structure for implementation in a laser-based rangefinding instrument provides a magnified image of a target. The structure disclosed can also serve to magnify a reticle or other information on an in-sight display in conjunction with the magnified target image. The zoom optics structure disclosed is also amenable to rangefinding instruments incorporating ballistics interfaces and those having image stabilization.

A reticle adjusting device includes a light source mounting seat; a UP adjusting mechanism which is connected with or abuts against a bottom of the light source mounting seat and is used for adjusting the light source mounting seat to move upwards in a vertical direction; a UP resetting mechanism which is movably connected with the light source mounting seat in an inserted mode and is used for enabling the light source mounting seat to move downwards to be reset in the vertical direction; an R adjusting mechanism is used for adjusting the light source mounting seat to move leftwards or rightwards in a horizontal direction; and an R resetting mechanism is used for resetting the light source mounting seat rightwards or leftwards in the horizontal direction, wherein the R adjusting mechanism and the R resetting mechanism are arranged at two ends of the light source mounting seat respectively.

A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.

Systems and methods are disclosed to correct aimpoint of digital weapon sight. The method employs the components of a digital weapon sight configured together for a process of sensing of a ballistic event, storing of orientation data and digital imagery data before and after a shot or series of shots, and then performing an image registration algorithm using the imagery data stored. The image registration determines the translational offset between the images, and aimpoint of subsequent shooting is corrected through application of adjusted reticle symbology or adjusted image sensor windowing.

Embodiments of the present disclosure generally relate to an optical system having a lens system configured to have a wide field of view and high resolution. The optical system includes three or more lens groups with ability to combat optical aberrations and produce a pupil outside of the lens group. The lens system as an image projection system projects a pattern or image rendered on a flat reticle or display of finite distance to the infinity. In an imaging system, the lens system collects light from infinity and forms an image of that object on a sensor.

The invention discloses a photoetching mask optimization method and device, a computer storage medium and a program product, and relates to the technical field of semiconductors. The photoetching mask optimization method comprises the steps that edge breaking is carried out on an initial mask plate graph, multiple broken edges are obtained, and the multiple edges comprise irregular edges; determining n horizontal segments and n vertical segments corresponding to the irregular edge according to the horizontal width and the vertical width of the irregular edge; combining the n horizontal segments and the n vertical segments, and converting to obtain a regular edge corresponding to the irregular edge and a reticle graph containing the regular edge; and performing mask optimization on the intermediate mask plate graph based on the initial mask plate graph to obtain a target mask plate graph. According to the embodiment of the invention, the photoetching mask optimization of the irregular layout can be effectively realized, so that the overall photoetching mask optimization efficiency and precision can be effectively improved.

A reticle thermal expansion calibration method includes exposing a group of wafers and generating a sub-recipe, performing data mining and data parsing to generate a plurality of overlay parameters, extracting a plurality of predetermined parameters from the plurality of overlay parameters, performing a linear regression on each of the predetermined parameters, and generating a coefficient of determination for each of the predetermined parameters.

The utility model relates to a photomask protective film dismounting device which comprises an object placing table, and a limiting piece, a dismounting assembly and a first temperature sensor are fixed on the object placing table; the upper surface of the storage table is coated with a teflon coating; and a cooling device is arranged in the object placing table and is used for maintaining the temperature of the upper surface of the object placing table at 5-10 DEG C, so that the adhesive between the photomask and the photomask protective film is hardened for subsequent analysis of the photomask protective film. The photomask protective film dismounting device designed by the utility model can be used for solving the problems that an adhesive is easy to splash and pollute the surface of a photomask when a heating method is used for dismounting, fogging spots are possibly caused during cleaning, and the cleanliness and the precision of the photomask are influenced; and damage is easily caused by direct tool dismounting, so that the cost is increased, and the service life of the photomask is shortened.