601 results about "Reticle" patented technology

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses a layout generation method for load effect compensation and a related device, which are applied to the technical field of photoetching and comprise the following steps: acquiring photomask data; carrying out grid division on the mask graph according to the photomask data, and determining layout density in each grid; comparing the layout density of each grid with a target density, and determining a density difference value corresponding to each grid; determining a virtual graph corresponding to each grid according to the density difference value; and adding a corresponding virtual graph in a layout area corresponding to the grid to form a compensated mask plate graph. By performing grid division on the mask plate graph, calculating the specific layout density in each grid and adding the corresponding virtual graph to the layout area corresponding to the grid according to the difference value between the layout density and the target density, the graph density of the layout area in each grid can be effectively compensated, so that the load effect of each area in the layout is balanced, and the performance of the mask plate is improved. And the etching uniformity is improved.

The invention discloses a high-precision temperature control method and system for a photoetching machine, and belongs to the technical field of photoetching machine temperature control. The method comprises the following steps: acquiring a temperature array on the lower surface of a mask, heat flux density distribution of a bearing surface of an exposure table and a hot pressure difference signal of an air floating layer, carrying out feature coding, and constructing a high-dimensional thermal coupling situation feature matrix; a dynamic thermal weight correlation map is generated based on the matrix, exposure key nodes serve as anchor points, and explicit modeling is conducted on nonlinear thermal paths among the nodes through a graph neural network; further calculating the spatial gradient change rate of the heat flux per unit area of the mask region according to the thermal weight map, and mapping the spatial gradient change rate to an exposure table temperature control array to generate a nonlinear control function curved surface; and dynamically adjusting power output and response delay parameters of the local heating unit according to the control function, so that dynamic thermal field equalization with nanoscale precision can be realized, thermal drift is effectively inhibited, and the photoetching imaging quality and the yield of an advanced process are improved.

To provide technology suitable for performing highly precise measurement of optical characteristics.SOLUTION: An evaluation method for evaluating an optical characteristic of a projection optical system is provided. The evaluation method includes a measurement step of illuminating a test reticle having a test pattern disposed on an object plane of the projection optical system, and measuring an amount of positional deviation of an image of the test pattern formed on an image plane of the projection optical system, and an estimation step of estimating the optical characteristic of the projection optical system based on a result of the measurement, wherein in the estimation step, the optical characteristic is estimated using a polynomial model including a regularization term.SELECTED DRAWING: Figure 2

The invention provides a method for correcting the layout of a photomask, and is applied to the technical field of semiconductors. According to the method and the device, a plurality of pixel graphs of which the interval lengths do not meet a preset range are screened out based on the interval lengths between adjacent pixel graphs, and then the key sizes of the screened pixel graphs are multiplied by N times according to different proportions, so that a plurality of first test photomasks are constructed; and then determining the optimal magnification ratio of the initial photomask based on the combination of the wafer data, the incremental limit suboptimal solution and the two-side clamping theorem, namely obtaining the target photomask, so that the unexpected effects are that the optimal magnification ratio of each pixel graph in the initial photomask can be rapidly determined only by using a small part of pixel graphs in the initial photomask, and the target photomask is obtained. The manufacturing efficiency and quality of the photomask and the space utilization rate of the photomask and the wafer are improved, and the manufacturing cost of the photomask is reduced.

An imaging optic (10) for projection lithography serves to image an object field (5), in which a reticulum to be imaged can be arranged, onto an image field (11), in which a substrate to be exposed can be arranged. The imaging optic (10) has a plurality of mirrors (M1 to M8) for guiding imaging light (16) along an imaging beam path from the object field (5) to the image field (11). The image-side numerical aperture of the imaging optic (10) is greater than 0.75. The optical conductivity of the imaging optic (10) is greater than 45 mm. 2 The result is an imaging optic whose usability for a projection exposure system is improved.

The utility model relates to a photomask protective film dismounting device which comprises an object placing table, and a limiting piece, a dismounting assembly and a first temperature sensor are fixed on the object placing table; the upper surface of the storage table is coated with a teflon coating; and a cooling device is arranged in the object placing table and is used for maintaining the temperature of the upper surface of the object placing table at 5-10 DEG C, so that the adhesive between the photomask and the photomask protective film is hardened for subsequent analysis of the photomask protective film. The photomask protective film dismounting device designed by the utility model can be used for solving the problems that an adhesive is easy to splash and pollute the surface of a photomask when a heating method is used for dismounting, fogging spots are possibly caused during cleaning, and the cleanliness and the precision of the photomask are influenced; and damage is easily caused by direct tool dismounting, so that the cost is increased, and the service life of the photomask is shortened.

An inspection device for a sub-element of a reticle pod comprises a carrier platform, a light source module, a camera module and a control module. The light source module includes a coaxial light source and a height adjustment mechanism. The height adjustment mechanism is connected to at least one of the coaxial light source and the carrier platform. The camera module is connected to the coaxial light source and has a lens facing the carrier platform. The control module is signally connected to the camera module and the height adjustment mechanism. The control module controls the height adjustment mechanism to adjust a relative distance between the coaxial light source and the carrier platform. The inspection device for a sub-element of a reticle pod performs optical inspection on the sub-element of a reticle pod.

The invention discloses a mask pattern repairing method, device and product, and relates to the technical field of semiconductor integrated circuits. The mask plate graph repairing method comprises the following steps: carrying out photoetching simulation on a mask plate graph by adopting a photoetching model to obtain a prediction graph corresponding to the mask plate graph; performing photoetching rule inspection on the prediction graph to obtain the position and the type of a defect point violating a photoetching rule in the prediction graph; according to the position of the defect point, determining a to-be-repaired area of the defect point on the mask plate graph; identifying a pattern edge in the to-be-repaired area, and calculating the influence degree of the position change of the pattern edge on the geometric deviation between the predicted pattern and the design layout by adopting the photoetching model; determining an adjustment parameter of the graph edge according to the type and the influence degree of the defect point; and adjusting the pattern edge according to the adjustment parameter to obtain a repaired mask plate pattern. According to the method, the defects in the mask plate graph can be repaired more efficiently.

A reticle enclosure includes a first cover having a first outer surface and a first inner surface and a second cover having a second outer surface and a second inner surface. The first cover and the second cover are joined together. The first cover and the second cover form an internal space therebetween configured to include a reticle. A catalyst layer is disposed on the first inner surface of the first cover and a dehumidification layer is disposed on the second inner surface of the second cover.

A method for operating a projection exposure system (1) comprises the following steps: providing a projection exposure system (1) with a radiation source (1) for generating illumination radiation (3), an illumination optic (11) for transferring the illumination radiation (3) from the radiation source (2) to an object field (8) extending in a scan direction (y) and a cross-scan direction (x), wherein the illumination optic (11) has at least one faceted mirror (6, 7) with a plurality of individual mirrors, and wherein at least a subset of the individual mirrors is configured such that they only partially illuminate the object field (8) in the scan direction (y), and a projection optic (10) for imaging a reticle (12) arranged in the object field (8) of the illumination optic (11) onto a wafer (19) arranged in an image field (17) of the projection optic (10), and specifying a set of at least one element of field-dependent aberrations. (Ai(x, y);i=(1..M)), specification of a target vector (Z(x) = (Z1(x), ..., Z; M (x) T ) for the target values ​​Z i (x) of the aberrations Ai(x, y) after averaging over the scan direction (y), dividing the extent of the object field (8) in the scan direction (y) into j ≥ 2 intervals ([y0; y1], ..., [y j-1 ; y j ]) and determining scan weights (gi(x, y)) which characterize a dependence of an illuminance at a location x in the cross-scan direction in the object field () on a position in the scan direction (y) such that a deviation of a weighted aberration vector A weighted ( x ) → : = ∑ gi A l → is reduced from the target vector (Z(x)).

The invention discloses a holographic ruler transverse measurement system based on a metasurface, which belongs to the technical field of holographic optical measurement and comprises a holographic ruler generation system, an observation system and a holographic ruler. The holographic ruler generation system comprises a holographic ruler shell, an illumination light system and a holographic reticle; the illumination light system and the holographic reticle are arranged in the holographic ruler shell, and an observation window is arranged on the holographic ruler shell; the illumination light system comprises a semiconductor laser, a 1 / 4 wave plate, a beam expander and a reflector; the holographic rulers are virtual focuses with the same focal length, the distance between the virtual focuses is 0.1-1000mm, and the virtual focuses are transversely arranged. The holographic ruler transverse measurement system based on the metasurface is long in measurement endurance time, high in measurement precision, high in measurement performance, small and exquisite in structure, convenient to use and capable of being easily applied to various occasions.

A system includes a microscope and computer system communicably coupled together. The microscope includes a camera, phase mask, and ultraviolet source. The phase mask is disposed within a view of the camera. The microscope is configured to scatter a light illuminating a tissue by emitting, using the ultraviolet source, an ultraviolet radiation towards the tissue and obtain, using the phase mask and the camera, an image of an illuminated surface of the tissue. The tissue includes at least one diagnostic feature. The image is within a predefined depth of field, inclusive, and includes a manifestation of the at least one diagnostic feature. The computer system is configured to determine a deblurred image from a trained first artificial intelligence model based on the image.

The embodiment of the invention provides a method, a system and equipment for establishing an optical proximity correction model and a storage medium, and the method comprises the steps: providing a test layout which is provided with a first test pattern; performing correction operation on the first test pattern by using a first optical proximity correction model to generate mask pattern data of the first test pattern; obtaining a physical contour of a first type semiconductor structure formed on a physical wafer by the first test pattern when exposure operation is executed according to the mask pattern data; the physical contour is the contour of the first type semiconductor structure corresponding to the repeated region; performing photoetching process simulation on the mask pattern data by using the first optical proximity correction model to generate a prediction contour; and correcting the first optical proximity correction model according to the physical contour and the predicted contour to obtain a second optical proximity correction model. By adopting the technical scheme, the correction precision of the OPC model can be improved, and the photoetching quality is improved.

The invention relates to a mask defect detection system based on polarization transmission and reflection combination. The system comprises a laser; the first polarization beam splitter is used for carrying out polarization beam splitting on the laser beam to generate P polarized light and S polarized light; the transmission light path is used for performing optical processing and polarization state adjustment on the P polarized light and then projecting the P polarized light to a mask plate; the reflection light path is used for performing optical processing and polarization state adjustment on the S polarized light and then projecting the S polarized light to a mask plate; the imaging light path is used for imaging when the P polarized light is transmitted from the mask plate to obtain a transmission image, and imaging when the S polarized light is reflected from the mask plate to obtain a reflection image; and the storage and operation module is connected with the imaging light path and is used for storing and operating the transmission image and the reflection image so as to analyze whether the mask has defects or not. According to the invention, transmission and reflection dual-polarization light path imaging is adopted, and various mask plate defects can be simultaneously and effectively detected.

An aiming system, an aiming adjustment method and device, and a medium, which belong to the technical field of aiming. The aiming adjustment method comprises: displaying a reticle image and at least one independent aiming point on a display interface (30), wherein the center point of the reticle image (32) and each independent aiming point are respectively used for aiming at target objects at different aiming distances, and each independent aiming point can independently move on the display interface (30) relative to the reticle image (32); on the basis of an adjustment object selection instruction, selecting the center point of the reticle image (32) or one of the independent aiming points to be a current aiming point to be adjusted; and on the basis of an aiming point position adjustment instruction, moving the current aiming point to be adjusted to a corresponding target aiming point position, so as to respectively and precisely adjust aiming points corresponding to different aiming distances to target positions that highly match the corresponding aiming distances. In this way, an aiming system based on the aiming adjustment method can respectively perform precise aiming on target objects at different aiming distances.

The invention relates to the technical field of semiconductor photoetching, and discloses visual alignment equipment for silicon-based material exposure, which is characterized in that a plurality of circular light-transmitting mark points are preset on a mask plate, alignment mark points are formed on a movable photosensitive stage through multi-angle rotary exposure, and after coordinates are acquired, the rotation center of the mask plate is fitted by a least square method; establishing a compensation sequence of rotation angles and coordinates; and during mass production, the actual attitude angle and the center coordinate of the substrate are obtained through an edge searching algorithm, a compensation value is selected in combination with an angle difference value, a to-be-compensated angle is reversely deduced through a rotation matrix, and the UVW platform is driven to complete XY theta three-axis accurate deviation correction. The method does not need trial exposure of the silicon-based substrate and multi-camera configuration, effectively solves the defects of material waste, high cost, low efficiency and the like in the prior art, and adapts to the characteristic that the silicon-based material has no alignment mark.

The invention discloses a shape perception optical proximity effect correction method and device, a storage medium and electronic equipment, and the method comprises the steps: obtaining an original design layout; performing CMP simulation on the original design layout to generate wafer morphology data; constructing a coupling optical model based on the EUV three-dimensional mask model and the wafer morphology data; performing layout decomposition on the design layout according to a multi-patterning process rule to obtain at least two mask plate patterns; a coupling optical model is adopted to carry out collaborative morphology perception optical proximity effect correction on the at least two mask plate graphs, and at least two corrected mask plate graphs are obtained; wherein when the current mask pattern is corrected, the adopted optical proximity environment comprises a historical mask correction result generated based on the coupling optical model. According to the invention, the imaging precision of advanced process nodes can be improved.

Provided is a mask layout design method including receiving input data, calculating a forbidden area, and designing an assist pattern disposed within the forbidden area, wherein the calculating of the forbidden area is performed by inverting an illumination system.

A reticle pod having a transparent window and a manufacturing method thereof, in which, the reticle pod includes a first housing, a second housing, a transparent window member, and a thermoplastic sealing material. The first housing is configured to mate with the second housing and the two define an accommodation space for receiving a reticle. The first housing includes a window formed therethrough for exposing the reticle. The transparent window member is disposed at the window to allow a light to pass through and reach the reticle. The thermoplastic sealing material is disposed between the first housing and the transparent window member and surrounds the transparent window member, thereby forming an airtight seal between the transparent window member and the first housing.

The invention relates to an optical proximity correction method and correction device, a mask, equipment and a storage medium. The method comprises the following steps: determining a correction limited graph from original correction graphs; wherein the correction limited pattern is a pattern which triggers edge placement error limitation, and the original correction pattern is a pattern obtained after first optical proximity correction is carried out on the photoetching design pattern; determining a to-be-corrected graph in the photoetching design graph based on the position of the correction limited graph in the original correction graph; performing second optical proximity correction on the to-be-corrected graph to obtain a target corrected graph; and processing the original correction graph based on the target correction graph to obtain a mask graph. According to the mask pattern, the influence of edge placement error limitation on the correction process can be eliminated, the correction precision of the photoetching design pattern after optical proximity correction is improved, the abnormities of narrowing, retraction and the like of the photoetching pattern are improved, the process window is improved, and the process risk is reduced.

An optical waveguide device and a preparation method therefor, and a near-eye display device. The optical waveguide device (1) comprises at least one optical waveguide (10). The optical waveguide (10) comprises: a waveguide sheet (11), which is used for making light beams transmit in the waveguide sheet (11) in a total reflection manner, wherein the waveguide sheet (11) has a coupling-in region (B) and at least two coupling-out regions (A); a coupling-in grating (12), which is arranged in the coupling-in region (B) and is used for coupling the light beams into the waveguide sheet (11); and at least two coupling-out gratings (13), which are correspondingly arranged in the at least two coupling-out regions (A) on a one-to-one basis, and are used for coupling out the light beams, which are transmitted in the waveguide sheet (11) in a total reflection manner, wherein the light intensities of the light beams coupled out by the at least two coupling-out gratings (13) are identical. The present application can improve the exit pupil uniformity of the optical waveguide device (1), thereby improving the visual experience of users, and also reducing the research and development costs incurred by the use of masks and the impact caused by diffraction effects.

The invention provides a mask layout generation method based on a reverse photoetching technology and a related product. The generation method comprises the following steps: performing reverse simulation on an integrated circuit target layout by using a light intensity calculation model to obtain a corresponding target light intensity distribution diagram; obtaining a target mask layout by using a preset generative adversarial network and taking the target light intensity distribution diagram as real data; the preset generative adversarial network is provided with a generator, a photoetching simulation model and a discriminator; and carrying out local optimization on the target mask layout to obtain an optimized target mask layout. According to the generation method, the target mask layout is generated by taking the target light intensity distribution diagram as real data, and through the processes of layout generation, photoetching simulation, updating iteration and verification evaluation, the generation and optimization speed of the mask layout is improved, and the pattern fidelity of the mask layout is improved.

The utility model mainly relates to the mask technology field especially, and particularly to mask clamping device and mask measuring equipment, wherein, mask clamping device includes installation base, clamping subassembly includes four clamping subassembly, four clamping subassembly jointly enclose and form the accommodation space, clamping subassembly can move up and down relative to installation base, clamping subassembly includes telescopic structural member, clamping structural member and elastic buffer, clamping structural member still includes the clamping part for abutting mask side and the horizontal setting and is used for the support of mask's support plate, the elastic buffer is located between the movable end with clamping structural member, detection subassembly is used for detecting whether mask is in horizontal state. Based on the structure design of the utility model, this mask clamping device can clamp the mask of non-standard size, and let mask measuring equipment can also measure the mask of non-standard size.

Described are containers for storing, transporting, shipping or processing fragile devices such as photomasks, reticles, and semiconductor wafers, including in particular dual containment pods that include an outer pod adapted to contain an inner reticle pod, with the inner reticle pod containing a reticle.

The invention provides a method for monitoring the motion state of a mask plate workpiece table by exposing an active area, which comprises the following steps of: 1, providing a wafer, performing active area exposure on the wafer, and aiming at the central energy / focal length of a focal length energy matrix test of the exposure, taking the optimal energy / focal length for not performing any registration error compensation on the active area under a corresponding process platform; step 2, determining whether to trigger the fault detection and classification system to work according to the standard deviation of the rotation amount of the mask workpiece table around the Z axis in the movement process generated by different exposure energy values of the focal length energy matrix test; and step 3, after the fault detection and classification system is started to work, checking the mask plate workpiece table. According to the application, the motion state of the mask plate workpiece table can be effectively monitored in real time.

The utility model provides a reticle locking structure and a sighting telescope, the reticle locking structure comprises a telescope tube and a supporting seat, the supporting seat is provided with a first through hole and a mounting groove used for mounting a reticle, the first through hole is respectively communicated with the mounting groove and the telescope tube, the supporting seat comprises a supporting part, the mounting groove is arranged on the supporting part, and the supporting part is provided with a second through hole. A notch is formed in one side of the mounting groove back to the mirror tube; the reticle locking structure further comprises a pressing ring, a mounting ring and a first connecting piece. The pressing ring is detachably connected to a groove opening of the mounting groove. One end of the mounting ring is in threaded connection with the mirror tube, the other end of the mounting ring axially abuts against the supporting part, and the supporting seat can rotate around the axis of the supporting seat relative to the mounting ring so as to adjust the radial angle of the mounting groove; the first connecting piece penetrates through the pressing ring and the supporting part and is detachably connected with the mirror tube; the sighting telescope comprises the reticle locking structure and the reticle, and the reticle is arranged in the mounting groove of the reticle locking structure. The utility model has the advantages of convenient installation, dismantlement and repair.

This invention discloses a method for fabricating a metasurface lens and a metasurface lens, relating to the field of metasurface lens technology. The method includes: acquiring a metasurface lens image; dividing the metasurface lens image according to a preset size to obtain at least two sub-images and a mask set corresponding to each sub-image; performing image transfer on a first wafer using the at least two sub-images and the mask set corresponding to each sub-image to obtain a second wafer carrying the metasurface lens image; and performing lens fabrication processing on the second wafer to obtain the metasurface lens. Through this method, this invention can improve efficiency and reduce costs while meeting optical performance requirements.