881 results about "Reticle" patented technology

Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses a layout generation method for load effect compensation and a related device, which are applied to the technical field of photoetching and comprise the following steps: acquiring photomask data; carrying out grid division on the mask graph according to the photomask data, and determining layout density in each grid; comparing the layout density of each grid with a target density, and determining a density difference value corresponding to each grid; determining a virtual graph corresponding to each grid according to the density difference value; and adding a corresponding virtual graph in a layout area corresponding to the grid to form a compensated mask plate graph. By performing grid division on the mask plate graph, calculating the specific layout density in each grid and adding the corresponding virtual graph to the layout area corresponding to the grid according to the difference value between the layout density and the target density, the graph density of the layout area in each grid can be effectively compensated, so that the load effect of each area in the layout is balanced, and the performance of the mask plate is improved. And the etching uniformity is improved.

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

Systems, devices, and methods are disclosed to correct aimpoint of a system of a weapon and affixed digital weapon sight. The method employs the components of a digital weapon sight configured together for a process of sensing of a ballistic event, storing of digital imagery data before and after a shot or series of shots, and then the performing of an image registration algorithm, via a cross-correlation type function. The image registration determines the misalignment between the images as a Cartesian shift, and aimpoint of subsequent shooting is corrected through application of adjusted reticle symbology or adjusted image sensor windowing. Preprocessing methods for enhancing image registration algorithm accuracy are presented.

The invention discloses a high-precision temperature control method and system for a photoetching machine, and belongs to the technical field of photoetching machine temperature control. The method comprises the following steps: acquiring a temperature array on the lower surface of a mask, heat flux density distribution of a bearing surface of an exposure table and a hot pressure difference signal of an air floating layer, carrying out feature coding, and constructing a high-dimensional thermal coupling situation feature matrix; a dynamic thermal weight correlation map is generated based on the matrix, exposure key nodes serve as anchor points, and explicit modeling is conducted on nonlinear thermal paths among the nodes through a graph neural network; further calculating the spatial gradient change rate of the heat flux per unit area of the mask region according to the thermal weight map, and mapping the spatial gradient change rate to an exposure table temperature control array to generate a nonlinear control function curved surface; and dynamically adjusting power output and response delay parameters of the local heating unit according to the control function, so that dynamic thermal field equalization with nanoscale precision can be realized, thermal drift is effectively inhibited, and the photoetching imaging quality and the yield of an advanced process are improved.

To provide technology suitable for performing highly precise measurement of optical characteristics.SOLUTION: An evaluation method for evaluating an optical characteristic of a projection optical system is provided. The evaluation method includes a measurement step of illuminating a test reticle having a test pattern disposed on an object plane of the projection optical system, and measuring an amount of positional deviation of an image of the test pattern formed on an image plane of the projection optical system, and an estimation step of estimating the optical characteristic of the projection optical system based on a result of the measurement, wherein in the estimation step, the optical characteristic is estimated using a polynomial model including a regularization term.SELECTED DRAWING: Figure 2

A weapon system has an optical sight mounted to a weapon and a frame with a sight window that is configured to superimpose a reticle that is visible through the sight window in a first focal plane. An optoelectronic device is mounted to the weapon and includes an imager with a sensor array and a display device. An image processor is configured to receive image data captured by the sensor array and process the image data to generate a subset image that is received from a select region of the sensor array. The select region of the sensor array defines a second focal plane. A controller is configured to receive an input from an operator, and in response to the input, to select the select region of the sensor array for aligning the second focal plane with the first focal plane.

The utility model belongs to the technical field of optical gauges, and particularly discloses a device for calibrating an optical axis of a binocular low-light night vision device. A double-tube front mirror of the device is fixed to the upper portion of an adjusting frame, a field instrument is fixed to the upper portion of a supporting frame, the supporting frame, a supporting seat and the adjusting frame are sequentially arranged on a workbench, a cross reticle I is arranged in the field instrument, a base I of the supporting seat is placed on the surface of the workbench, a top plate is fixed to the top end of a connecting handle through the connecting handle, and a connecting plate is fixed to the upper surface of the top plate. The top of the connecting plate is provided with a dovetail groove which can be in sliding connection with a dovetail joint at the bottom of the binocular low-light night vision device, and the extending direction of the dovetail groove is parallel to the optical axis of the field instrument. According to the utility model, the binocular low-light night vision device can be directly clamped in the dovetail groove in a sliding manner through the dovetail joint for positioning, the calibration of the parallelism of the optical axis is realized through the cooperation of the field instrument and the double-tube front mirror, and the calibration device has the characteristics of simple structure, convenience in calibration, high result precision and reliability in positioning.

The invention provides a CMOS-MEMS (Complementary Metal Oxide Semiconductor-Micro-Electro-Mechanical System) flow and gas thermal conductivity integrated sensor as well as a preparation method and application thereof, and belongs to the field of sensors. The thermal insulation structure is designed between the thermal flow sensor and the gas thermal conductivity sensor, so that external thermal interference and thermal interference among different internal sensors are reduced, related thermophysical parameters of gas are detected at the same time, the flow is corrected, and the detection accuracy is improved. And the performance of the flow sensor is further improved so as to meet the requirements of flow detection and gas parameter detection in a more complex environment. When the sensor is prepared, a Post-CMOS (Complementary Metal Oxide Semiconductor) process without a mask is adopted, so that a complicated photoetching step is avoided, and the post-processing efficiency of the whole Post-CMOS is greatly improved. According to the sensor disclosed by the invention, a CMOS-MEMS (Complementary Metal Oxide Semiconductor-Micro-Electro-Mechanical System) process of monolithic integration and integrated preparation molding of various sensors is realized through reasonable process design.

The embodiment of the invention relates to the field of photomasks, and provides a photomask protective film frame and a preparation method thereof, the photomask protective film frame comprises a frame main body made of a metal material and a coating formed on the surface of the frame main body, and the photomask protective film frame is characterized in that the coating is at least composed of carbon black, silicon dioxide particles and organic dye. The nanoscale carbon black in the coating has a high light absorption coefficient, fills gaps of dye molecules and forms a continuous light absorption network, the organic dye enhances absorption of light with specific wavelength through a molecular structure conjugated system, and the nanoscale carbon black and the organic dye form a composite function of broad-spectrum absorption and accurate waveband adjustment, so that more than 95% of light is absorbed in a broad-waveband range, light reflection on the surface of the frame is reduced, and the light absorption efficiency is improved. Pattern distortion caused by reflected light in the photoetching process is avoided, silicon dioxide is embedded into an organic dye matrix, silicon dioxide gaps are filled with carbon black particles, the porosity of the coating is reduced, the wear resistance of the coating is improved, and the cracking risk of the coating is reduced. Optical absorption, wear resistance and weather resistance are synchronously improved.

The invention provides a method for correcting the layout of a photomask, and is applied to the technical field of semiconductors. According to the method and the device, a plurality of pixel graphs of which the interval lengths do not meet a preset range are screened out based on the interval lengths between adjacent pixel graphs, and then the key sizes of the screened pixel graphs are multiplied by N times according to different proportions, so that a plurality of first test photomasks are constructed; and then determining the optimal magnification ratio of the initial photomask based on the combination of the wafer data, the incremental limit suboptimal solution and the two-side clamping theorem, namely obtaining the target photomask, so that the unexpected effects are that the optimal magnification ratio of each pixel graph in the initial photomask can be rapidly determined only by using a small part of pixel graphs in the initial photomask, and the target photomask is obtained. The manufacturing efficiency and quality of the photomask and the space utilization rate of the photomask and the wafer are improved, and the manufacturing cost of the photomask is reduced.

An imaging optic (10) for projection lithography serves to image an object field (5), in which a reticulum to be imaged can be arranged, onto an image field (11), in which a substrate to be exposed can be arranged. The imaging optic (10) has a plurality of mirrors (M1 to M8) for guiding imaging light (16) along an imaging beam path from the object field (5) to the image field (11). The image-side numerical aperture of the imaging optic (10) is greater than 0.75. The optical conductivity of the imaging optic (10) is greater than 45 mm. 2 The result is an imaging optic whose usability for a projection exposure system is improved.

A reticle adjusting device includes a light source mounting seat; a UP adjusting mechanism which is connected with or abuts against a bottom of the light source mounting seat and is used for adjusting the light source mounting seat to move upwards in a vertical direction; a UP resetting mechanism which is movably connected with the light source mounting seat in an inserted mode and is used for enabling the light source mounting seat to move downwards to be reset in the vertical direction; an R adjusting mechanism is used for adjusting the light source mounting seat to move leftwards or rightwards in a horizontal direction; and an R resetting mechanism is used for resetting the light source mounting seat rightwards or leftwards in the horizontal direction, wherein the R adjusting mechanism and the R resetting mechanism are arranged at two ends of the light source mounting seat respectively.

Systems and methods are disclosed to correct aimpoint of digital weapon sight. The method employs the components of a digital weapon sight configured together for a process of sensing of a ballistic event, storing of orientation data and digital imagery data before and after a shot or series of shots, and then performing an image registration algorithm using the imagery data stored. The image registration determines the translational offset between the images, and aimpoint of subsequent shooting is corrected through application of adjusted reticle symbology or adjusted image sensor windowing.

Embodiments of the present disclosure generally relate to an optical system having a lens system configured to have a wide field of view and high resolution. The optical system includes three or more lens groups with ability to combat optical aberrations and produce a pupil outside of the lens group. The lens system as an image projection system projects a pattern or image rendered on a flat reticle or display of finite distance to the infinity. In an imaging system, the lens system collects light from infinity and forms an image of that object on a sensor.

The invention discloses a photoetching mask optimization method and device, a computer storage medium and a program product, and relates to the technical field of semiconductors. The photoetching mask optimization method comprises the steps that edge breaking is carried out on an initial mask plate graph, multiple broken edges are obtained, and the multiple edges comprise irregular edges; determining n horizontal segments and n vertical segments corresponding to the irregular edge according to the horizontal width and the vertical width of the irregular edge; combining the n horizontal segments and the n vertical segments, and converting to obtain a regular edge corresponding to the irregular edge and a reticle graph containing the regular edge; and performing mask optimization on the intermediate mask plate graph based on the initial mask plate graph to obtain a target mask plate graph. According to the embodiment of the invention, the photoetching mask optimization of the irregular layout can be effectively realized, so that the overall photoetching mask optimization efficiency and precision can be effectively improved.

The utility model relates to a photomask protective film dismounting device which comprises an object placing table, and a limiting piece, a dismounting assembly and a first temperature sensor are fixed on the object placing table; the upper surface of the storage table is coated with a teflon coating; and a cooling device is arranged in the object placing table and is used for maintaining the temperature of the upper surface of the object placing table at 5-10 DEG C, so that the adhesive between the photomask and the photomask protective film is hardened for subsequent analysis of the photomask protective film. The photomask protective film dismounting device designed by the utility model can be used for solving the problems that an adhesive is easy to splash and pollute the surface of a photomask when a heating method is used for dismounting, fogging spots are possibly caused during cleaning, and the cleanliness and the precision of the photomask are influenced; and damage is easily caused by direct tool dismounting, so that the cost is increased, and the service life of the photomask is shortened.

An inspection device for a sub-element of a reticle pod comprises a carrier platform, a light source module, a camera module and a control module. The light source module includes a coaxial light source and a height adjustment mechanism. The height adjustment mechanism is connected to at least one of the coaxial light source and the carrier platform. The camera module is connected to the coaxial light source and has a lens facing the carrier platform. The control module is signally connected to the camera module and the height adjustment mechanism. The control module controls the height adjustment mechanism to adjust a relative distance between the coaxial light source and the carrier platform. The inspection device for a sub-element of a reticle pod performs optical inspection on the sub-element of a reticle pod.

The invention discloses a rotary multi-mask parallel rapid exposure system and method. The rotary multi-mask parallel rapid exposure system mainly comprises a light source module, a light beam scanning module, a turntable group, a projection objective lens and a workpiece table, wherein the light source module is used for generating an illumination light beam for exposing the mask plate; the light beam scanning module is used for reflecting laser beams emitted by the light source and scanning according to a certain angular velocity to form a light spot array; the turntable group is used for defining a plurality of patterns required by photoetching processing; the projection objective lens is used for transferring the pattern on the mask plate to the surface of the sample; and the workpiece table is used for quickly stepping the sample. The invention discloses a rotary multi-mask parallel rapid exposure system and method, the exposure system not only can realize rapid transfer of mask patterns based on a distributed stepping method, but also can realize parallel exposure of various mask images, and the exposure system is simple in structure, easy to implement and low in cost. The exposure efficiency of the illumination system and the flexibility of the illumination mode can be greatly improved, so that the photoetching processing efficiency is improved.

The invention discloses a preparation method of a micron-sized metal thin film array, and belongs to the technical field of thin film deposition processes. A micron-sized metal thin film array is prepared by adopting an unbalanced magnetic field cathode and using a vertical sputtering mode, the thickness of a metal thin film is 100-500nm, and a thin film grain growth mode is a nano columnar crystal. The preparation method comprises the following steps: (1) through combination of a magnetron sputtering method and a mask layer, a circular metal film array with the diameter consistent with that of holes in the surface of the mask layer can be precisely prepared on a large scale; (2) a non-equilibrium magnetic field cathode is used, plasma can be restrained on the surface of the target material, the utilization rate of the target material is improved, and meanwhile, sputtered target material atoms are restrained, so that the target material atoms can vertically pass through holes of the mask layer and are deposited on the surface of the substrate; and (3) the metal film array with uniform size and consistent thickness can be obtained by adjusting the technological parameters during magnetron sputtering, such as air pressure, power, target-substrate distance and rotating speed, so that the preparation difficulty of the film array is effectively reduced, and meanwhile, the film quality is improved.

Apparatus and methods including miniaturization of a single focal plane collimated light-based aiming sights and their variants. One technical effect includes a user's ability to develop an effective, accurate and fast sight picture using ‘red-dot’ / reticle type sights while preserving the superior accuracy of these technologies. One new result is the reduction of the housing size, and overall footprint of the structural elements of these sights. In at least on embodiment, using LEDs, the power requirement for the aiming device is significantly lowered which means that the volume and weight of the aiming device is reduced. Accordingly, this enables positioning of the now miniaturized sight at the top of a pistol, firearm or apparatus. In at least one embodiment an aiming device is located with a firearm's front sight. In at least one embodiment, an aiming sight's structure, methods of fabrication, assembly, use includes kitting of the sights.

The invention discloses a mask pattern repairing method, device and product, and relates to the technical field of semiconductor integrated circuits. The mask plate graph repairing method comprises the following steps: carrying out photoetching simulation on a mask plate graph by adopting a photoetching model to obtain a prediction graph corresponding to the mask plate graph; performing photoetching rule inspection on the prediction graph to obtain the position and the type of a defect point violating a photoetching rule in the prediction graph; according to the position of the defect point, determining a to-be-repaired area of the defect point on the mask plate graph; identifying a pattern edge in the to-be-repaired area, and calculating the influence degree of the position change of the pattern edge on the geometric deviation between the predicted pattern and the design layout by adopting the photoetching model; determining an adjustment parameter of the graph edge according to the type and the influence degree of the defect point; and adjusting the pattern edge according to the adjustment parameter to obtain a repaired mask plate pattern. According to the method, the defects in the mask plate graph can be repaired more efficiently.

A reticle enclosure includes a first cover having a first outer surface and a first inner surface and a second cover having a second outer surface and a second inner surface. The first cover and the second cover are joined together. The first cover and the second cover form an internal space therebetween configured to include a reticle. A catalyst layer is disposed on the first inner surface of the first cover and a dehumidification layer is disposed on the second inner surface of the second cover.

A method for operating a projection exposure system (1) comprises the following steps: providing a projection exposure system (1) with a radiation source (1) for generating illumination radiation (3), an illumination optic (11) for transferring the illumination radiation (3) from the radiation source (2) to an object field (8) extending in a scan direction (y) and a cross-scan direction (x), wherein the illumination optic (11) has at least one faceted mirror (6, 7) with a plurality of individual mirrors, and wherein at least a subset of the individual mirrors is configured such that they only partially illuminate the object field (8) in the scan direction (y), and a projection optic (10) for imaging a reticle (12) arranged in the object field (8) of the illumination optic (11) onto a wafer (19) arranged in an image field (17) of the projection optic (10), and specifying a set of at least one element of field-dependent aberrations. (Ai(x, y);i=(1..M)), specification of a target vector (Z(x) = (Z1(x), ..., Z; M (x) T ) for the target values ​​Z i (x) of the aberrations Ai(x, y) after averaging over the scan direction (y), dividing the extent of the object field (8) in the scan direction (y) into j ≥ 2 intervals ([y0; y1], ..., [y j-1 ; y j ]) and determining scan weights (gi(x, y)) which characterize a dependence of an illuminance at a location x in the cross-scan direction in the object field () on a position in the scan direction (y) such that a deviation of a weighted aberration vector A weighted ( x ) → : = ∑ gi A l → is reduced from the target vector (Z(x)).

The invention discloses a holographic ruler transverse measurement system based on a metasurface, which belongs to the technical field of holographic optical measurement and comprises a holographic ruler generation system, an observation system and a holographic ruler. The holographic ruler generation system comprises a holographic ruler shell, an illumination light system and a holographic reticle; the illumination light system and the holographic reticle are arranged in the holographic ruler shell, and an observation window is arranged on the holographic ruler shell; the illumination light system comprises a semiconductor laser, a 1 / 4 wave plate, a beam expander and a reflector; the holographic rulers are virtual focuses with the same focal length, the distance between the virtual focuses is 0.1-1000mm, and the virtual focuses are transversely arranged. The holographic ruler transverse measurement system based on the metasurface is long in measurement endurance time, high in measurement precision, high in measurement performance, small and exquisite in structure, convenient to use and capable of being easily applied to various occasions.

A system includes a microscope and computer system communicably coupled together. The microscope includes a camera, phase mask, and ultraviolet source. The phase mask is disposed within a view of the camera. The microscope is configured to scatter a light illuminating a tissue by emitting, using the ultraviolet source, an ultraviolet radiation towards the tissue and obtain, using the phase mask and the camera, an image of an illuminated surface of the tissue. The tissue includes at least one diagnostic feature. The image is within a predefined depth of field, inclusive, and includes a manifestation of the at least one diagnostic feature. The computer system is configured to determine a deblurred image from a trained first artificial intelligence model based on the image.

The embodiment of the invention provides a method, a system and equipment for establishing an optical proximity correction model and a storage medium, and the method comprises the steps: providing a test layout which is provided with a first test pattern; performing correction operation on the first test pattern by using a first optical proximity correction model to generate mask pattern data of the first test pattern; obtaining a physical contour of a first type semiconductor structure formed on a physical wafer by the first test pattern when exposure operation is executed according to the mask pattern data; the physical contour is the contour of the first type semiconductor structure corresponding to the repeated region; performing photoetching process simulation on the mask pattern data by using the first optical proximity correction model to generate a prediction contour; and correcting the first optical proximity correction model according to the physical contour and the predicted contour to obtain a second optical proximity correction model. By adopting the technical scheme, the correction precision of the OPC model can be improved, and the photoetching quality is improved.

The invention relates to a mask defect detection system based on polarization transmission and reflection combination. The system comprises a laser; the first polarization beam splitter is used for carrying out polarization beam splitting on the laser beam to generate P polarized light and S polarized light; the transmission light path is used for performing optical processing and polarization state adjustment on the P polarized light and then projecting the P polarized light to a mask plate; the reflection light path is used for performing optical processing and polarization state adjustment on the S polarized light and then projecting the S polarized light to a mask plate; the imaging light path is used for imaging when the P polarized light is transmitted from the mask plate to obtain a transmission image, and imaging when the S polarized light is reflected from the mask plate to obtain a reflection image; and the storage and operation module is connected with the imaging light path and is used for storing and operating the transmission image and the reflection image so as to analyze whether the mask has defects or not. According to the invention, transmission and reflection dual-polarization light path imaging is adopted, and various mask plate defects can be simultaneously and effectively detected.