3348 results about "Reticle" patented technology

Disclosed is an exposure apparatus which includes a projection optical system for projecting a pattern of a reticle onto a substrate, wherein the substrate is exposed through a liquid medium kept at least in a portion between the substrate and an optical element of the projection optical system which optical element is nearest to the substrate, a supplying system for supplying a liquid medium, a collecting system for collecting a liquid medium, and an exhausting system for removing a bubble in the liquid medium through a bubble removing material having such property that it passes a gas but it does not pass a liquid.

An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.

Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a reticle support in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate, and a patterned resist material deposited on the metal photomask layer, etching the metal photomask layer in the first orientation, positioning the reticle in at least a second orientation, and etching the metal photomask layer in the at least second orientation.

The present invention pertains to a substrate conveyor apparatus that carries a substrate such as a reticle, a substrate conveyance method and an exposure apparatus, with the object of reliably adhering a substrate to the lower surface of a chuck. The present invention is characterized by having a movable stage that can move in the horizontal direction and that is equipped with a chuck having an adhesion surface that faces down for adhering a substrate, an up-down means equipped with an up-down table that is positionable in a position below the substrate and within the movement range of the movable stage, and a conveyance means equipped with a conveyor arm that carries the substrate to the up-down means.

An exposure apparatus includes a illumination optical system for illuminating a reticle with light from a light source, and a projection optical system for projecting a pattern of the reticle onto an object, said projection optical system includes a lens closest to the object, wherein a surface on the object side of the lens is smaller than an effective area of a surface on the reticle side of the lens, and wherein said exposure apparatus exposes the object via a liquid that is filled in a space between the lens and the object.

An exposure apparatus includes a projection optical system for projecting an image of a pattern of a reticle onto an object, via a fluid that is filled in a space between said projection optical system and the object, a vibrator part for vibrating at least one of the fluid, the object, and the projection optical system, and a controller for controlling the vibrator part so that the vibration of at least one of the fluid, the object, and the projection optical system becomes a tolerance during a processing of the object.

The invention concerns an illumination system for wavelengths <=193 nm, particularly for EUV lithography, with at least one light source, which has an illumination A in a predetermined surface; at least one device for producing secondary light sources; at least one mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements; one or more optical elements, which are arranged between the mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements and the reticle plane, whereby the optical elements image the secondary light sources in the exit pupil of the illumination system.The illumination system is characterized by the fact that the raster elements of the one or more mirror or lenses are shaped and arranged in such a way that the images of the raster elements cover by means of the optical elements the major portion of the reticle plane and that the exit pupil defined by aperture and filling degree is illuminated.

A firearm sight receives information regarding a factor, and then automatically adjusts the relative positions of a digital reticle and an image on a viewing section to compensate for the influence of the factor on a projectile trajectory. A different feature involves automatically adjusting a characteristic of the reticle based on the image. Another feature involves automatically adjusting the digital image to distinguish a portion thereof aligned with the reticle from an adjacent portion thereof. Yet another feature involves causing the firearm sight to generate an audible sound. Still another feature involves presenting information on the viewing section which represents the position of the firearm sight on the surface of the earth.

A microprocessor circuit that is used to monitor and control a firearm. The microprocessor circuit accomplishes this by monitoring various sensor & control inputs, and acting on these inputs to execute user defined functions. The microprocessor circuit can use the sensory input to determine firearm statistics. These statistics can include the number of times the firearm has been shot, the efficiency of the firearm automatic action, range-to-target, and et cetera. The firearm system can also use a combination of sensors to fabricate a bullet chronograph whereby the muzzle velocity of a cartridge can be determined. These statistics can be date-stamped and recorded into memory. Statistics from Law Enforcement firearms can be used for courtroom evidence and police reporting. These statistics can also be used for firearm maintenance and warranty repair. The microprocessor circuit can display the statistical data to the user via simple light emitting diodes, or sophisticated liquid crystal displays. Data can also be downloaded to a computer docking station as well. The microprocessor circuit can also display the information within the optics of a riflescope. When used in conjunction with a laser range finder sensor, the microprocessor circuit can adjust the electronic cross-hairs (reticle) to compensate for the bullet trajectory.

The invention concerns a telescopic rifle sight for individual weapon equipped with at least one step micro-motor designed to vary the angle of the sight relative to the axis of the weapon and the initial axis of aim, thereby adequately varying the whole sight assembly and thus varying the original position of the sight reticle from the original point of aim to the required point of aim.

Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

A reticle base level block to support a reticle stage for holding a reticle, a wafer base level block to support a wafer stage for holding a wafer, and the like are supported to be independent of other portions and be controllable in their attitudes by parallel link mechanisms each including at least three expandable rods. Therefore, the portions supported by the parallel link mechanism can be made lightweight using the advantages of the parallel link mechanism, and the attitudes of those can be precisely controlled with excellent operational-characteristics and high rigidity. In addition, transmission of vibrations and the like between the reticle base level block, the wafer base level block and other portions, e.g. an optical projection system, can be prevented. Therefore, a fine pattern formed on the reticle can be precisely transferred onto the wafer.

Various computer-implemented methods are provided. One method for evaluating reticle layout data includes generating a simulated image using the reticle layout data as input to a model of a reticle manufacturing process. The simulated image illustrates how features of the reticle layout data will be formed on a reticle by the reticle manufacturing process. The method also includes determining manufacturability of the reticle layout data using the simulated image. The manufacturability is a measure of how accurately the features will be formed on the reticle. Also provided are various carrier media that include program instructions executable on a computer system for performing a method for evaluating reticle layout data as described herein. In addition, systems configured to evaluate reticle layout data are provided. The systems include a computer system and a carrier medium that includes program instructions executable on the computer system for performing method(s) described herein.

The present invention provides a system and method of modifying the mask layout shapes of an integrated circuit layout design to compensate for reticle field location-specific systematic CD variations resulting from mask writing process variations, lens imperfections in lithographic patterning, and photoresist process variations. Called PLC (Process-optimized Layout Compensation), each set of compensation rules according to the present invention is specifically tailored for a particular mask-writer-patterning-tools-and-resist-process combination, and are performed on a reticle-wide basis. Furthermore, for each geometric shape in the mask layout, the amount of modification is determined based on a categorization of the type of the shape, the specific location in the reticle field the particular shape falls in, its context (i.e., surrounding patterns, orientation, etc.), as well as certain photoresist parameters to be used in the patterning process.

A reticle of a projectile weapon aiming system such as a riflescope includes a primary aiming mark adapted to be sighted-in at a first selected range and further includes a plurality of secondary aiming marks spaced apart below the primary aiming mark. The secondary aiming marks are positioned to compensate for ballistic drop at preselected incremental ranges beyond the first selected range, for a selected group of ammunition having similar ballistic characteristics. Angles subtended by adjacent aiming marks of the reticle can be adjusted by changing the optical power of the riflescope, to thereby compensate for ballistic characteristics of different ammunition. In some embodiments, the reticle includes a set of windage aiming marks spaced apart along at least one secondary horizontal axis intersecting a selected one of the secondary aiming marks, to facilitate compensation for the effect of crosswinds on the trajectory of the projectile.

An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.

Methods and systems for inspecting a reticle are provided. In an embodiment, a method may include forming an aerial image of the reticle using a set of exposure conditions. The reticle may include optical proximity correction (OPC) features. The method may also include detecting defects on the reticle by comparing the aerial image to a reference image stored in a database. The reference image may be substantially optically equivalent to an image of the reticle that would be printed on a specimen by an exposure system under the set of exposure conditions. The reference image may not include images of the OPC features. Therefore, a substantial portion of the defects include defects that would be printed onto the specimen by the exposure system using the reticle under the set of exposure conditions. The method may also include indicating the defects that are detected in critical regions of the reticle.

The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.

Computer-implemented methods, processors, and systems for creating a wafer fabrication process are provided. One computer-implemented method includes determining individual error budgets for different parameters of the wafer fabrication process based on an overall error budget for the wafer fabrication process and simulated images that illustrate how reticle design data will be printed on a wafer at different values of the different parameters. The method also includes creating the wafer fabrication process based on the overall error budget and the individual error budgets.

The present invention relates to a method and a system for predicting and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semi-conductor wafer. The method according to the invention comprises the steps of collecting information about a mask substrate, a mask writer, an exposure stati n, and/or about behavior of a processing step that will occur after the writing of the mask. Further the method comprises predicting from the combined information distorsions occuring in the pattern, when it is subsequently printed on the workpiece; calculating from said prediction a correction to diminish said predicted distorsion, and exposing said pattern onto said mask substrate while applying said correction for said distorsions.

Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.