170 results about "Electron-beam lithography" patented technology

The invention discloses a deformable electron beam lithography machine beam spot size calculation method and system, and the method comprises the steps: S1, employing a hyperbolic cosine function as a primary function according to a relation curve between the current intensity and the beam spot position, and constructing a composite function model through translation and superposition; s2, assuming that the observation value is a noise version of the composite function model, and establishing a likelihood function; a logarithm likelihood function is maximized and converted into a minimum residual sum of squares, partial derivatives of the minimum residual sum of squares about all parameters are solved, and a gradient equation set is obtained; s3, calculating the measurement signal, and extracting key feature points in the curve; calculating an initial parameter value according to the position of the feature point: taking the initial parameter as input, and iteratively solving a gradient equation set to obtain an exact solution of each parameter; and S4, calculating the actual size, the central position and the sharpness of the left and right edges of the electron beam spot according to the exact solutions of the parameters. The method has the advantages of high calculation precision and the like.

The invention discloses a refractive index sensing chip of an integrated BIC metasurface laser, which integrates a vertical cavity surface emitting laser (VCSEL) and a novel ball road pattern metasurface designed based on a BIC theory, and designs a high-sensitivity refractive index sensor by using a continuous domain bound state theory. The ball road pattern structure is prepared through electron beam lithography and a gold evaporation-stripping process, has uniform nanoscale patterns, and can realize high refractive index sensitivity. The chip can be used in the field of biosensing. By optimizing structural parameters and a preparation process, the optical sensing chip with high integration level and high sensitivity is realized, and a new solution is provided for unmarked biological detection.

The invention provides an optical anti-counterfeiting film with a three-dimensional dynamic display effect, the minimum function structure of the optical anti-counterfeiting film comprises a first Moire image layer, a transparent optical refraction layer and a second Moire image layer which generates a Moire effect with the first Moire image layer, one of two coherent Moire images is processed on the front surface of the transparent optical film, and the other of the two coherent Moire images is processed on the rear surface of the transparent optical refraction layer. And the other one of the two coherent Moire images is processed at the corresponding position of the rear surface, and the period of the Moire image has a strict mathematical relationship with the refractive index n of the optical transparent material and the thickness h of the optical transparent material, so that a three-dimensional dynamic pattern effect capable of being observed by naked eyes is realized. According to different processing methods, the manufacturing method of the optical anti-counterfeiting film and the product of the optical anti-counterfeiting film can be realized from the cost of common printing to the cost of high-precision micro-nano processing such as electron beam lithography, the market requirements of various grades can be met, and the anti-counterfeiting difficulty grade can be changed according to different image design and processing methods.

The invention discloses an AI-based KrF and ArF photoresist formula recommendation system and method, and relates to the technical field of photoresist formula recommendation, and the method comprises the following steps: carrying out data acquisition on photoresist formula parameters by adopting an electron beam exposure and deep ultraviolet lithography method to obtain an original experimental data set; preprocessing the original experimental data set to obtain a structured data set; a database construction method is adopted, the structured data set is stored in a relational database, an index is established, a training set and a verification set are divided, and a historical database is obtained; constructing a prediction model based on the historical database and the convolutional neural network, inputting the formula parameters in the historical database into the prediction model, and outputting predicted values of the resolution and the LWR; optimizing under the constraint conditions of developing time and exposure energy by adopting an NSGA-II multi-objective optimization method on the basis of the predicted values of the resolution and the LWR to obtain a Pareto optimal solution set; and carrying out performance test on the recommended formula in the Pareto optimal solution set by adopting physical vapor deposition (PVD) equipment.

The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution.

The present invention belongs to the technical field of photoresist microelectronics chemistry, and discloses an electron beam photoresist film-forming resin, a preparation method and an application thereof. The film-forming resin comprises a random copolymer structure shown in Formula I. The resin structure of Formula I is obtained by random copolymerization of an aromatic vinyl monomer, an α-haloacrylate monomer and a maleic anhydride monomer; wherein x, y, and z are the molar ratios of the monomers, 0.1 ≤ x ≤ 0.8, 0.1 ≤ y ≤ 0.8, 0.1 ≤ z ≤ 0.3, and x + y + z = 1; R1 is one of H or C1-C3 alkanes and their derivatives, R2 is F, Cl, Br or I; R3 is one of adamantyl and its derivatives; a photoresist composition comprises 1 wt% - 10 wt% of the above film-forming resin, an auxiliary agent and an organic solvent. The photoresist has good sensitivity, adhesion and dry etching resistance performance, and has good application in the main film-forming resin of electron beam photoresist.

The invention belongs to the technical field of micro-nano processing, and particularly relates to a Pt-HSQ-based high-resolution X-ray Fresnel zone plate and a preparation method thereof. According to the X-ray Fresnel zone plate, a Pt-HSQ metal-inorganic material system is adopted, a diffraction structure with a large aspect ratio and Pt material quasi-periodic dense stripes specially needed by an X-ray zone plate lens is formed through electron beam lithography and an ALD process, and diffraction focusing from a soft X-ray wave band to a hard X-ray wave band and imaging with an amplification function are achieved. The wave zone plate has excellent mechanical stability, and the irradiation resistance and morphology retentivity of the wave zone plate under high-energy irradiation are remarkably improved. And high-resolution X-ray focusing elements with different energy wavebands and different focal lengths can be prepared according to geometric design and material selection of the wave zone plate. The lens is suitable for microscopic imaging, coherent diffraction imaging, X-ray spectrum, nanometer detection and other scenes of a synchrotron radiation or off-line laboratory X-ray light source, and has wide popularization value and application prospect.

The utility model relates to the technical field of electron beam lithography, in particular to an electron emitter. The electron emitter comprises a patterned light source, a lens unit and a photoelectric material unit; the patterned light source comprises a light source and a pattern generator, the lens unit is arranged between the pattern generator and the photoelectric material unit, and the pattern generator is used for modulating light beams emitted by the light source; after a light beam emitted by the light source is modulated by the pattern generator, an optical pattern with light and shade changes is generated, the optical pattern is irradiated on the surface of the photoelectric material unit after being amplified and imaged by the lens unit so as to generate an external photoelectric effect, and an electron beam with the optical pattern is formed. According to the electron beam lithography device, electron beams with optical patterns can be sent into the electron optical system to directly carry out patterning electron beam lithography treatment, and exposure carried out in a point-by-point electron beam scanning mode in the prior art is not needed, so that the electron beam lithography efficiency is greatly improved by the electron beam lithography device.

This invention belongs to the field of micro-nano technology and electron beam lithography application technology, specifically relating to a diffraction-based waveguide electronic beam exposure method and system that balances high speed with sub-nanometer writing field stitching errors. The method includes: designing a test pattern based on an AR waveguide structure and actual task exposure time; conducting exposure experiments based on the test pattern, testing and recording the stitching error values ​​at the writing field boundaries and four corner positions, and establishing a stitching error database under different writing field correction values; obtaining a coefficient matrix and initial error through polynomial fitting based on the stitching error database under different writing field correction values; and obtaining correction variables for preset design values ​​based on the coefficient matrix and the initial error, and correcting the exposure accordingly. This invention provides an easily implemented electron beam writing field pre-calibration method that can truly meet the dual requirements of high-precision and high-efficiency exposure in industrial production.

The application provides a photoelectric detector with wide spectrum response characteristics and a preparation method and application thereof, and the device adopts a two-dimensional device structure of Au / WSe2 / PbI2 / HfO2 / Si. The device preparation process is as follows: firstly, two-dimensional PbI2 nanosheets are prepared on the surface of a HfO2 / Si substrate through a solution method. Then, WSe2 nanosheets are stacked on the surface of the PbI2 nanosheets by adopting a van der Waals integration process to prepare a WSe2 / PbI2 heterostructure, and the process needs to be highly accurately operated to ensure that the hetero-interface is clean and in close contact. Subsequently, a gold (Au) electrode is accurately drawn and deposited on the surface of the WSe2 / PbI2 heterostructure by using electron beam lithography (EBL) and vacuum coating technology. The photoelectric detector exhibits wide spectrum detection characteristics and has good spectrum response capability in the ultraviolet, visible light and near-infrared ranges. The application provides a solid material foundation and technical support for the fields of wide spectrum imaging and optical communication.

The invention discloses a method for preparing a thermoelectric device based on a monatomic layer IV-VI group nanobelt. The method comprises the following steps: synthesizing a monatomic layer IV-VI group nanosheet through a one-pot method solution, transferring the monatomic layer IV-VI group nanosheet to a SiO2 / Si substrate, patterning the monatomic layer IV-VI group nanosheet into a nanobelt through electron beam lithography and reactive ion etching technologies, and then depositing a metal contact point and assembling the metal contact point into the thermoelectric device. Based on the excellent thermoelectric performance of the monatomic layer nanobelt predicted through theoretical research, the thermoelectric figure of merit (ZT) is remarkably improved through the quantum confinement effect and the low heat conductivity characteristic of the monatomic layer nanobelt, and the method is suitable for the fields of waste heat power generation, electronic cooling and the like. The technological process is controllable, and potential large-scale production capacity is achieved. According to the method, the thermoelectric performance is optimized by accurately controlling the thickness of the nanosheets and the width of the nanoribbons, the experimental steps are closely combined with theoretical prediction, the method is suitable for various IV-VI family materials, and a new technical path is provided for development of efficient thermoelectric devices.

The present application relates to the technical filed of semiconductor chip nanofabrication, provides a method for preparing a chip embedded composite for electron beam lithography. The preparation method includes: providing a composite structure, the composite structure including a first substrate, a conductive layer disposed on a surface of the first substrate and a chip array disposed on a surface of the conductive layer away from the first substrate; arranging a protective layer on an outer surface of the chip array, where the protective layer covers the chip array; encapsulating and curing the composite structure and the protective layer by a polymer solution; removing the protective layer to obtain the chip embedded composite.

This invention discloses a ferroelectric transistor capable of generating thousands of polarization states and its fabrication and application method. The ferroelectric transistor is fabricated based on a Gr / hBN heterojunction, with a Gr sheet as the top layer and an hBN sheet as the bottom layer. The rotation angle between Gr and hBN is controlled within 1° using a dry transfer method. The Gr / hBN heterojunction is fixed on a silicon substrate (SiO2 / Si). Source and drain electrodes are further deposited using electron beam lithography and electron beam evaporation processes to construct the Gr / hBN ferroelectric transistor. A single device can generate dozens of discrete polarization states through source-drain pulse modulation. Simultaneously, by superimposing a gate voltage while applying source-drain pulses, the Fermi level of graphene can be reversibly tuned between dozens of non-volatile doping levels, and the polarization state can be modulated by source-drain pulses at each doping level. The number of stable polarization states reaches thousands at room temperature; different polarization states can be retained for more than 10^6 times. 5 Seconds, and based on linear extrapolation, it could last for more than 10 years.

An off-axis illumination grating and a preparation method therefor, and a separable off-axis illumination lithography mask. The preparation method comprises: by means of electron beam lithography and reactive ion etching, preparing a grating master template (1) having a grating pattern (S1); copying the grating pattern on the grating master template (1) to the surface of a working template (2) by means of first nanoimprint, so as to form a working template having the grating pattern (S2); sequentially preparing a grating material layer (4), a transfer layer (5) and an imprint resist layer (6) on a substrate (3), copying, by means of second nanoimprint, the grating pattern of the working template (2) obtained in step (S2) to the imprint resist layer (6), and performing curing (S3); and performing etching transfer on the grating pattern on the imprint resist layer (6) to the transfer layer (5) and the grating material layer (4) in sequence, and removing the residual transfer layer (5), so as to obtain an off-axis illumination grating (S4). The off-axis illumination grating can be separated from a mask, and can be reused.

The invention discloses an automatic lens centering method and system for a deformable electron beam lithography machine, and the method comprises the steps: S1, constructing a cascade transmission matrix of an upper centering coil, a lens and a lower centering coil, and deducing the strict centering condition of an electron beam; s2, setting an initial current of an upper centering coil, an initial excitation current of a lens and an initial iteration step length; acquiring an initial beam spot centroid position as a target position; s3, adjusting the current of the upper centering coil to preset coil current, keeping the current of the lens unchanged, and obtaining the position of the mass center of the current beam spot; the upper centering coil current is kept unchanged, the lens current is adjusted to preset lens current, the beam spot mass center position is obtained, and then the beam spot position offset is calculated; s4, calculating a double-constraint loss function and a gradient thereof; and S5, updating the upper centering coil current according to the gradient direction and the self-adaptive step length, and if the loss function value is smaller than a set threshold value, judging that centering is completed. The method has the advantages of improving the centering precision and efficiency and the like.

The invention relates to a method for preparing a tin-diol dry photoresist by using molecular layer deposition, which comprises the following steps of: preparing a tin-based mixed film by using a tetradimethylamine tin (tin tetrachloride) metal source and a diol organic source as raw materials through a molecular layer deposition (MLD) technology, and taking the tin-based mixed film as a high-resolution dry positive photoresist. The tin-based photoresist can be used in electron beam lithography (EBL), extreme ultraviolet lithography (EUVL) and beyond extreme ultraviolet lithography (BEUVL). Under 50 kilovolt electron beam exposure, the resolution ratio can reach 7 nanometers at 2000 [mu] C / cm < 2 >; under extreme ultraviolet exposure, the resolution ratio can reach at least 18 nanometers at 22 mj / cm < 2 >; under exposure beyond extreme ultraviolet, the resolution ratio at 520 mj / cm < 2 > reaches at least 32 nanometers. The tin-based mixed photoresist disclosed by the invention has a wide application prospect, and a new technical scheme is provided for developing a semiconductor dry photoresist with higher performance.

The invention provides a semiconductor device and a manufacturing method thereof. The method comprises the following steps: forming a semiconductor stack on a substrate; forming an N-type doped layer on the semiconductor lamination layer; patterning the N-type doping layer by electron beam lithography to form a source N-type doping part and a drain N-type doping part; forming a source electrode on the source N-type doped part; forming a drain electrode on the drain N-type doped portion; a gate electrode between the source N-type doped portion and the drain N-type doped portion is formed on the semiconductor stack.

The present invention relates to a method and system for quantitatively analyzing electron beam photoresist residue based on edge detection. The method uses a scanning electron microscope to photograph a photoresist structure after exposure and development. The original image with photoresist structural features obtained by the scanning electron microscope is segmented into a photoresist structure region and a developed region using an edge detection algorithm. The average grayscale of each region is calculated to obtain a quantitative evaluation result of the residual adhesive between the structures. Compared with the prior art, the present invention quantifies the residual adhesive in the electron beam photoresist structure, allowing intuitive comparison of photoresist exposure results obtained with different exposure parameters. This facilitates precise control of electron beam lithography exposure parameters and has the potential to improve the efficiency and yield of electron beam lithography processing.

This disclosure provides a composite dielectric structure, a device having the same, and a fabrication method thereof. The fabrication method includes operations S1-S4. Operation S1: Depositing source and drain ohmic metals at designated locations on the surface of an epitaxial wafer; Operation S2: Using photoresist and electron beam lithography to create the required window for the gate structure; Operation S3: Etching a portion of the epitaxial wafer surface structure corresponding to the window and removing the photoresist to fabricate a gate trench; Operation S4: Growing AlN / SiN within the gate trench. X Composite dielectrics enable the fabrication of devices with composite dielectric structures.

This invention belongs to the field of micro / nano fabrication and optical testing technology, specifically relating to a high-resolution test card for dielectric materials in the EUV and soft X-ray bands. The test card includes a substrate and a Siemens star test pattern formed thereon. The test card uses silsesquioxane (HSQ) as the structural material and is fabricated using electron beam lithography. The structural height can reach 500 nm with a minimum linewidth of 10 nm. This invention utilizes the dual absorption and strong phase modulation capabilities of HSQ in the EUV / soft X-ray bands, making it suitable for both absorption contrast and phase contrast imaging modes in system resolution calibration and performance evaluation. This test card offers advantages such as standardized patterns, high resolution, adjustable contrast, and good fabrication consistency, providing crucial metrological support for the performance testing of high-end EUV / soft X-ray optical imaging and lithography systems.

The application relates to an electron beam lithography micro-nano structure processing method and device, an anti-fake mark and a reflection grating. The method comprises the following steps: preparing an acrylic substrate; obtaining a design structure; and irradiating the acrylic substrate by using an electron beam according to the design structure, so as to obtain a micro-nano structure with the design structure. The acrylic material is subjected to micro-nano structure processing, the process of electron beam lithography micro-nano structure processing is simplified, and the material cost and the labor cost can be reduced.

The invention discloses a preparation method of a near-infrared achromatic super lens based on a nanoimprint technology, and relates to the technical field of micro-nano manufacturing. The preparation method comprises the following steps: 1, designing a target super lens by using finite element simulation software based on a time domain finite difference method, a particle swarm algorithm and a scalar diffraction algorithm; 2, preparing a silicon female die corresponding to the super lens according to the designed target super lens parameters by using electron beam lithography and deep reactive ion etching; 3, carrying out surface fluorination treatment on the silicon female die; and 4, preparing a corresponding sub-mold according to the silicon female mold, carrying out imprinting by using a nano imprinting technology and the sub-mold, and finally, etching the a-Si layer on the surface of the substrate through deep reactive ion etching by taking imprinting glue as an etching mask to obtain the super lens. According to the invention, the nanoimprint technology can be used for manufacturing the near-infrared achromatic superlens, so that the near-infrared achromatic superlens gets rid of dependence on a high-precision photoetching machine.

This invention discloses an image generation system for multi-electron beam lithography equipment and its manufacturing method. The image generation system is the core component, capable of deflecting the electron beam incident through an aperture, redirecting the focused electron beam to different positions to achieve exposure at different points within a write field. Through a control chip and transmission lines, different voltages are applied to the top metal electrode of the image generation system. The top electrode is connected to the sidewall electrodes; by adjusting the voltage applied to the top electrode, the voltage of the sidewall electrodes is adjusted to control the electric field strength, thereby achieving functions such as deflection and projection of the incident electron beam, ultimately projecting the beam spot to any position within the write field.

The application belongs to the field of organic / polymer neuromorphic devices, and specifically provides a nano neuromorphic device with an organic two-dimensional conjugate symmetric polymer as an active layer, and a preparation method and application thereof. The nano device is manufactured in the form of an 8*8 cross switch array through electron beam lithography technology and stripping method, and the width of the word line and the bit line is 100 nm and 200 nm respectively, which is a very small nano structure. The device realizes record-high yield of the polymer memristor with minimization and low potential, and simultaneously realizes fast response within 20-40 ns, the variation range of D2D is less than 10%, the device yield is higher than 90%, and the device can reach 50-100 nm scale, and the power consumption is lower than 20 J / bit. The polymer memristor array can realize storage and calculation integration, and can be used for information storage, and has excellent application prospect in the field of artificial intelligence.

A soft nanoimprint-based TMDC material patterning method. Adjusting a SF6 gas etching time on the basis of the thickness of a TMDC two-dimensional material can freely adjust a nano pattern depth to adapt to different optical performance requirements. The present invention specifically optimizes an RIE electron beam lithography process to prepare large-area samples, can implement full-area patterning of TMDC two-dimensional materials, greatly optimizes a technological process, improves scientific research production efficiency, and reduces process costs. During integration with a photoelectric device, when a silicon oxide wafer is used as a substrate, O2 is first introduced 5s into an RIE plasma etcher to treat the surface of the silicon oxide wafer so as to increase its hydrophilicity, thereby allowing for more uniform spin-coating of SU8. The method is universal to TMDC of different thicknesses and types.

The invention discloses a miniaturized large-aperture refraction-super hybrid thermal imaging refraction-super hybrid lens and a thermal imager, and belongs to the field of optical lenses, and the lens comprises a first lens and a second lens which are sequentially arranged from an object plane to an image plane along an optical axis. According to the invention, a folding and super hybrid system is formed by combining a super-surface lens and a traditional lens, the super-surface can flexibly regulate and control the characteristics of phase, amplitude, polarization and the like of light waves on the sub-wavelength scale, and mature micro-nano processing technologies such as electron beam lithography, nano-imprinting and the like and diversified materials are adopted; the characteristics help to reduce the size and weight of the lens of an optical system, reduce the cost of raw materials, and realize the miniaturization, light weight and integrated design of thermal imaging equipment.

The invention relates to a method for regulating and controlling the retentivity of a ferroelectric domain wall memory through the size of a device, which comprises the following steps of: epitaxially growing a BiFeO3 film with the thickness of 200nm on a SrTiO3 (001) substrate which is beveled by 2 degrees, ensuring the quality of the film by adopting pulsed laser deposition, and forming a Pt planar electrode structure on the surface of the film through magnetron sputtering, electron beam photoetching and reactive ion etching, the polarization overturning area is controlled by adjusting the electrode gap, the retentivity is tested by combining an I-V curve and a PFM spectrum, and the result shows that when the overturning area is larger than 7 * 10 < 6 > nm < 2 >, the device can keep the polarization state for a long time, and when the area is reduced to 1.3 * 10 < 4 > nm < 2 >, the retentivity disappears. According to the invention, the retention rule of size dependence is defined, the influence of a depolarization field and ferroelastic energy is effectively overcome, and the reliability and information retention time of the memory are remarkably improved.

The invention relates to a resistive random access memory based on ferroelectric domain wall current leading and a preparation method thereof. The method comprises the following steps: epitaxially growing a BiFeOfilm on a [001] SrTiO single crystal substrate which is beveled at 2 degrees in a [100] direction, and inducing to form a periodic stripe domain structure of which a 71-degree domain wall is parallel to a (101) plane by utilizing the limiting characteristic of the beveled substrate; preparing a top electrode by adopting pulse laser deposition or magnetron sputtering; the electron beam lithography technology is used for preparing a nanoscale planar electrode pair structure type device, ultraviolet lithography is used for preparing a capacitance type device with a micron-sized electrode, and good scale dependence and current response characteristics are achieved. By using the electrode deposited by magnetron sputtering, the defect is introduced at the interface, the change of the Schottky barrier in the polarization overturning process is counteracted, the current of the diode can be effectively suppressed, and the real domain wall current is obtained.

The invention discloses a forming diaphragm assembly, an electron beam splitting module and a multi-electron beam photoetching machine. The forming diaphragm assembly comprises a first cold plate with a first through hole; the first diaphragm array plate can do reciprocating motion in the extending direction of the first cold plate through a first moving mechanism so that part of the first diaphragm array plate can be located at the position corresponding to the first through hole, and the first diaphragm array plate is arranged in the extending direction of the first cold plate. Due to the fact that the position, corresponding to the first through hole of the first cold plate, of the first diaphragm array plate can be changed under the action of the first moving mechanism, electron beams can irradiate different positions of the first diaphragm array plate after penetrating through the first through hole, and the situation that the first diaphragm array plate is heated and deformed due to the fact that the same position is irradiated by the electron beams all the time is avoided; moreover, heat on the first diaphragm array plate at the corresponding position, except the first through hole, of the first cold plate can be quickly dissipated by means of the first cold plate, so that deformation of the first diaphragm array plate caused by electron beam irradiation is avoided.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.