120 results about "Electron-beam lithography" patented technology

The invention belongs to the technical field of micro-nano processing, and particularly relates to a Pt-HSQ-based high-resolution X-ray Fresnel zone plate and a preparation method thereof. According to the X-ray Fresnel zone plate, a Pt-HSQ metal-inorganic material system is adopted, a diffraction structure with a large aspect ratio and Pt material quasi-periodic dense stripes specially needed by an X-ray zone plate lens is formed through electron beam lithography and an ALD process, and diffraction focusing from a soft X-ray wave band to a hard X-ray wave band and imaging with an amplification function are achieved. The wave zone plate has excellent mechanical stability, and the irradiation resistance and morphology retentivity of the wave zone plate under high-energy irradiation are remarkably improved. And high-resolution X-ray focusing elements with different energy wavebands and different focal lengths can be prepared according to geometric design and material selection of the wave zone plate. The lens is suitable for microscopic imaging, coherent diffraction imaging, X-ray spectrum, nanometer detection and other scenes of a synchrotron radiation or off-line laboratory X-ray light source, and has wide popularization value and application prospect.

This invention belongs to the field of micro-nano technology and electron beam lithography application technology, specifically relating to a diffraction-based waveguide electronic beam exposure method and system that balances high speed with sub-nanometer writing field stitching errors. The method includes: designing a test pattern based on an AR waveguide structure and actual task exposure time; conducting exposure experiments based on the test pattern, testing and recording the stitching error values ​​at the writing field boundaries and four corner positions, and establishing a stitching error database under different writing field correction values; obtaining a coefficient matrix and initial error through polynomial fitting based on the stitching error database under different writing field correction values; and obtaining correction variables for preset design values ​​based on the coefficient matrix and the initial error, and correcting the exposure accordingly. This invention provides an easily implemented electron beam writing field pre-calibration method that can truly meet the dual requirements of high-precision and high-efficiency exposure in industrial production.

The application provides a photoelectric detector with wide spectrum response characteristics and a preparation method and application thereof, and the device adopts a two-dimensional device structure of Au / WSe2 / PbI2 / HfO2 / Si. The device preparation process is as follows: firstly, two-dimensional PbI2 nanosheets are prepared on the surface of a HfO2 / Si substrate through a solution method. Then, WSe2 nanosheets are stacked on the surface of the PbI2 nanosheets by adopting a van der Waals integration process to prepare a WSe2 / PbI2 heterostructure, and the process needs to be highly accurately operated to ensure that the hetero-interface is clean and in close contact. Subsequently, a gold (Au) electrode is accurately drawn and deposited on the surface of the WSe2 / PbI2 heterostructure by using electron beam lithography (EBL) and vacuum coating technology. The photoelectric detector exhibits wide spectrum detection characteristics and has good spectrum response capability in the ultraviolet, visible light and near-infrared ranges. The application provides a solid material foundation and technical support for the fields of wide spectrum imaging and optical communication.

The invention discloses a method for preparing a thermoelectric device based on a monatomic layer IV-VI group nanobelt. The method comprises the following steps: synthesizing a monatomic layer IV-VI group nanosheet through a one-pot method solution, transferring the monatomic layer IV-VI group nanosheet to a SiO2 / Si substrate, patterning the monatomic layer IV-VI group nanosheet into a nanobelt through electron beam lithography and reactive ion etching technologies, and then depositing a metal contact point and assembling the metal contact point into the thermoelectric device. Based on the excellent thermoelectric performance of the monatomic layer nanobelt predicted through theoretical research, the thermoelectric figure of merit (ZT) is remarkably improved through the quantum confinement effect and the low heat conductivity characteristic of the monatomic layer nanobelt, and the method is suitable for the fields of waste heat power generation, electronic cooling and the like. The technological process is controllable, and potential large-scale production capacity is achieved. According to the method, the thermoelectric performance is optimized by accurately controlling the thickness of the nanosheets and the width of the nanoribbons, the experimental steps are closely combined with theoretical prediction, the method is suitable for various IV-VI family materials, and a new technical path is provided for development of efficient thermoelectric devices.

The present application relates to the technical filed of semiconductor chip nanofabrication, provides a method for preparing a chip embedded composite for electron beam lithography. The preparation method includes: providing a composite structure, the composite structure including a first substrate, a conductive layer disposed on a surface of the first substrate and a chip array disposed on a surface of the conductive layer away from the first substrate; arranging a protective layer on an outer surface of the chip array, where the protective layer covers the chip array; encapsulating and curing the composite structure and the protective layer by a polymer solution; removing the protective layer to obtain the chip embedded composite.

This invention discloses a ferroelectric transistor capable of generating thousands of polarization states and its fabrication and application method. The ferroelectric transistor is fabricated based on a Gr / hBN heterojunction, with a Gr sheet as the top layer and an hBN sheet as the bottom layer. The rotation angle between Gr and hBN is controlled within 1° using a dry transfer method. The Gr / hBN heterojunction is fixed on a silicon substrate (SiO2 / Si). Source and drain electrodes are further deposited using electron beam lithography and electron beam evaporation processes to construct the Gr / hBN ferroelectric transistor. A single device can generate dozens of discrete polarization states through source-drain pulse modulation. Simultaneously, by superimposing a gate voltage while applying source-drain pulses, the Fermi level of graphene can be reversibly tuned between dozens of non-volatile doping levels, and the polarization state can be modulated by source-drain pulses at each doping level. The number of stable polarization states reaches thousands at room temperature; different polarization states can be retained for more than 10^6 times. 5 Seconds, and based on linear extrapolation, it could last for more than 10 years.

The invention relates to a method for preparing a tin-diol dry photoresist by using molecular layer deposition, which comprises the following steps of: preparing a tin-based mixed film by using a tetradimethylamine tin (tin tetrachloride) metal source and a diol organic source as raw materials through a molecular layer deposition (MLD) technology, and taking the tin-based mixed film as a high-resolution dry positive photoresist. The tin-based photoresist can be used in electron beam lithography (EBL), extreme ultraviolet lithography (EUVL) and beyond extreme ultraviolet lithography (BEUVL). Under 50 kilovolt electron beam exposure, the resolution ratio can reach 7 nanometers at 2000 [mu] C / cm < 2 >; under extreme ultraviolet exposure, the resolution ratio can reach at least 18 nanometers at 22 mj / cm < 2 >; under exposure beyond extreme ultraviolet, the resolution ratio at 520 mj / cm < 2 > reaches at least 32 nanometers. The tin-based mixed photoresist disclosed by the invention has a wide application prospect, and a new technical scheme is provided for developing a semiconductor dry photoresist with higher performance.

This disclosure provides a composite dielectric structure, a device having the same, and a fabrication method thereof. The fabrication method includes operations S1-S4. Operation S1: Depositing source and drain ohmic metals at designated locations on the surface of an epitaxial wafer; Operation S2: Using photoresist and electron beam lithography to create the required window for the gate structure; Operation S3: Etching a portion of the epitaxial wafer surface structure corresponding to the window and removing the photoresist to fabricate a gate trench; Operation S4: Growing AlN / SiN within the gate trench. X Composite dielectrics enable the fabrication of devices with composite dielectric structures.

This invention belongs to the field of micro / nano fabrication and optical testing technology, specifically relating to a high-resolution test card for dielectric materials in the EUV and soft X-ray bands. The test card includes a substrate and a Siemens star test pattern formed thereon. The test card uses silsesquioxane (HSQ) as the structural material and is fabricated using electron beam lithography. The structural height can reach 500 nm with a minimum linewidth of 10 nm. This invention utilizes the dual absorption and strong phase modulation capabilities of HSQ in the EUV / soft X-ray bands, making it suitable for both absorption contrast and phase contrast imaging modes in system resolution calibration and performance evaluation. This test card offers advantages such as standardized patterns, high resolution, adjustable contrast, and good fabrication consistency, providing crucial metrological support for the performance testing of high-end EUV / soft X-ray optical imaging and lithography systems.

The application relates to an electron beam lithography micro-nano structure processing method and device, an anti-fake mark and a reflection grating. The method comprises the following steps: preparing an acrylic substrate; obtaining a design structure; and irradiating the acrylic substrate by using an electron beam according to the design structure, so as to obtain a micro-nano structure with the design structure. The acrylic material is subjected to micro-nano structure processing, the process of electron beam lithography micro-nano structure processing is simplified, and the material cost and the labor cost can be reduced.

The invention discloses a preparation method of a near-infrared achromatic super lens based on a nanoimprint technology, and relates to the technical field of micro-nano manufacturing. The preparation method comprises the following steps: 1, designing a target super lens by using finite element simulation software based on a time domain finite difference method, a particle swarm algorithm and a scalar diffraction algorithm; 2, preparing a silicon female die corresponding to the super lens according to the designed target super lens parameters by using electron beam lithography and deep reactive ion etching; 3, carrying out surface fluorination treatment on the silicon female die; and 4, preparing a corresponding sub-mold according to the silicon female mold, carrying out imprinting by using a nano imprinting technology and the sub-mold, and finally, etching the a-Si layer on the surface of the substrate through deep reactive ion etching by taking imprinting glue as an etching mask to obtain the super lens. According to the invention, the nanoimprint technology can be used for manufacturing the near-infrared achromatic superlens, so that the near-infrared achromatic superlens gets rid of dependence on a high-precision photoetching machine.

This invention discloses an image generation system for multi-electron beam lithography equipment and its manufacturing method. The image generation system is the core component, capable of deflecting the electron beam incident through an aperture, redirecting the focused electron beam to different positions to achieve exposure at different points within a write field. Through a control chip and transmission lines, different voltages are applied to the top metal electrode of the image generation system. The top electrode is connected to the sidewall electrodes; by adjusting the voltage applied to the top electrode, the voltage of the sidewall electrodes is adjusted to control the electric field strength, thereby achieving functions such as deflection and projection of the incident electron beam, ultimately projecting the beam spot to any position within the write field.

The application belongs to the field of organic / polymer neuromorphic devices, and specifically provides a nano neuromorphic device with an organic two-dimensional conjugate symmetric polymer as an active layer, and a preparation method and application thereof. The nano device is manufactured in the form of an 8*8 cross switch array through electron beam lithography technology and stripping method, and the width of the word line and the bit line is 100 nm and 200 nm respectively, which is a very small nano structure. The device realizes record-high yield of the polymer memristor with minimization and low potential, and simultaneously realizes fast response within 20-40 ns, the variation range of D2D is less than 10%, the device yield is higher than 90%, and the device can reach 50-100 nm scale, and the power consumption is lower than 20 J / bit. The polymer memristor array can realize storage and calculation integration, and can be used for information storage, and has excellent application prospect in the field of artificial intelligence.

A soft nanoimprint-based TMDC material patterning method. Adjusting a SF6 gas etching time on the basis of the thickness of a TMDC two-dimensional material can freely adjust a nano pattern depth to adapt to different optical performance requirements. The present invention specifically optimizes an RIE electron beam lithography process to prepare large-area samples, can implement full-area patterning of TMDC two-dimensional materials, greatly optimizes a technological process, improves scientific research production efficiency, and reduces process costs. During integration with a photoelectric device, when a silicon oxide wafer is used as a substrate, O2 is first introduced 5s into an RIE plasma etcher to treat the surface of the silicon oxide wafer so as to increase its hydrophilicity, thereby allowing for more uniform spin-coating of SU8. The method is universal to TMDC of different thicknesses and types.

The invention discloses a miniaturized large-aperture refraction-super hybrid thermal imaging refraction-super hybrid lens and a thermal imager, and belongs to the field of optical lenses, and the lens comprises a first lens and a second lens which are sequentially arranged from an object plane to an image plane along an optical axis. According to the invention, a folding and super hybrid system is formed by combining a super-surface lens and a traditional lens, the super-surface can flexibly regulate and control the characteristics of phase, amplitude, polarization and the like of light waves on the sub-wavelength scale, and mature micro-nano processing technologies such as electron beam lithography, nano-imprinting and the like and diversified materials are adopted; the characteristics help to reduce the size and weight of the lens of an optical system, reduce the cost of raw materials, and realize the miniaturization, light weight and integrated design of thermal imaging equipment.

The invention relates to a method for regulating and controlling the retentivity of a ferroelectric domain wall memory through the size of a device, which comprises the following steps of: epitaxially growing a BiFeO3 film with the thickness of 200nm on a SrTiO3 (001) substrate which is beveled by 2 degrees, ensuring the quality of the film by adopting pulsed laser deposition, and forming a Pt planar electrode structure on the surface of the film through magnetron sputtering, electron beam photoetching and reactive ion etching, the polarization overturning area is controlled by adjusting the electrode gap, the retentivity is tested by combining an I-V curve and a PFM spectrum, and the result shows that when the overturning area is larger than 7 * 10 < 6 > nm < 2 >, the device can keep the polarization state for a long time, and when the area is reduced to 1.3 * 10 < 4 > nm < 2 >, the retentivity disappears. According to the invention, the retention rule of size dependence is defined, the influence of a depolarization field and ferroelastic energy is effectively overcome, and the reliability and information retention time of the memory are remarkably improved.

The invention relates to a resistive random access memory based on ferroelectric domain wall current leading and a preparation method thereof. The method comprises the following steps: epitaxially growing a BiFeOfilm on a [001] SrTiO single crystal substrate which is beveled at 2 degrees in a [100] direction, and inducing to form a periodic stripe domain structure of which a 71-degree domain wall is parallel to a (101) plane by utilizing the limiting characteristic of the beveled substrate; preparing a top electrode by adopting pulse laser deposition or magnetron sputtering; the electron beam lithography technology is used for preparing a nanoscale planar electrode pair structure type device, ultraviolet lithography is used for preparing a capacitance type device with a micron-sized electrode, and good scale dependence and current response characteristics are achieved. By using the electrode deposited by magnetron sputtering, the defect is introduced at the interface, the change of the Schottky barrier in the polarization overturning process is counteracted, the current of the diode can be effectively suppressed, and the real domain wall current is obtained.

The invention discloses a forming diaphragm assembly, an electron beam splitting module and a multi-electron beam photoetching machine. The forming diaphragm assembly comprises a first cold plate with a first through hole; the first diaphragm array plate can do reciprocating motion in the extending direction of the first cold plate through a first moving mechanism so that part of the first diaphragm array plate can be located at the position corresponding to the first through hole, and the first diaphragm array plate is arranged in the extending direction of the first cold plate. Due to the fact that the position, corresponding to the first through hole of the first cold plate, of the first diaphragm array plate can be changed under the action of the first moving mechanism, electron beams can irradiate different positions of the first diaphragm array plate after penetrating through the first through hole, and the situation that the first diaphragm array plate is heated and deformed due to the fact that the same position is irradiated by the electron beams all the time is avoided; moreover, heat on the first diaphragm array plate at the corresponding position, except the first through hole, of the first cold plate can be quickly dissipated by means of the first cold plate, so that deformation of the first diaphragm array plate caused by electron beam irradiation is avoided.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

The present invention relates to a horseshoe-type Josephson junction device and a method of manufacturing the device. The method of manufacturing is an improved method of manufacturing Josephson junctions by using 30 kV electron beam lithography in conjunction with the Dolan technique. While the 30 kV electron beam process is well documented in terms of steps and process, the geometry and contribution of backscattered electrons have not been correlated. The present invention addresses the challenge of reproducibility by improving the accuracy and consistency of the method of manufacturing. It is demonstrated that choosing appropriate geometries significantly increases the chances of success, as some designs are more robust to small variations in process parameters than others, a critical step toward reliable and scalable superconducting quantum circuits for the 30 kV electron beam process.

A device capable of suppressing changes in the influence of the Coulomb effect during a shot in multi-beam writing is provided. [Configuration] A drawing device 100 according to one embodiment of the present invention is characterized by comprising a multi-photoelectron source 10 that emits a multi-photoelectron beam, a photoelectron source control circuit 131 that controls the multi-photoelectron source so that, for each shot of the multi-photoelectron beam, all photoelectron beams that become ON beams among the multi-photoelectron beams in that shot have a common irradiation time and the individual beam current of each photoelectron beam is maintained constant during the shot, and a drawing mechanism 150 that draws a pattern on a sample using the multi-photoelectron beam whose individual beam current is maintained constant during the shot.

The present invention belongs to the field of micro-nano processing technology, specifically a method for overlaying a large-area light-blocking area based on pattern assistance. The present invention introduces an auxiliary pattern around the existing structure, so that the auxiliary pattern and the top layer of photoresist form a protective barrier together, effectively covering the side of the structure, and overlaying the large-area light-blocking area onto the working area with poor photoresist wettability, ensuring that the working area of ​​the hard X-ray photon screen is not damaged during the processing, thereby ensuring the high performance and stability of the final product; specifically, it includes the processing of the working area, auxiliary pattern and light-blocking area of ​​the device, and is completed on a thin film window; its process flow includes photolithography, metallization, debonding, overlaying, metallization and debonding. The method of the present invention has the advantages of improving overlay accuracy, saving electron beam lithography time, shortening process time, etc.; it is suitable for hard X-ray high-contrast imaging of biological cells, organic materials and dielectric materials.

The present invention discloses a Cd-EDTA detection method based on solid-state nanopore detection technology, comprising: obtaining a nanopore sensor, wherein the nanopores in the nanopore sensor are prepared using electron beam lithography technology; configuring an electrolyte solution; preparing a Cd-EDTA sample and configuring a standard Cd-EDTA solution of different concentrations; after configuring an electrochemical workstation, applying an AC signal, and obtaining a response signal of the nanopore sensor within a preset frequency range to obtain a current blockade signal; and detecting Cu-EDTA based on the current blockade signal corresponding to the Cd-EDTA sample and the standard Cd-EDTA solution of different concentrations. The present invention improves the detection sensitivity of the Cd-EDTA complex and can achieve accurate detection at low concentrations. Real-time, label-free detection is achieved, which is suitable for pollutant monitoring in complex environments in mining areas.

SOLUTION: The present invention discloses a device for integrating an OLED and a phototransistor and an electron beam etching method, in which an OLED and a phototransistor in a series connection relationship are connected by an insulating electron beam photoresist using an electron beam etching process and manufactured on a substrate. The phototransistor includes a gate, a gate insulating layer, a source, a conductive channel, and a drain, and the OLED includes a semi-transparent anode, a hole transport layer, a light-emitting and electron transport layer, a reflective cathode, and a substrate.EFFECT: The present invention realizes the integration of multiple functions of the organic electronic device, has the functions of light emitting display and light sensing at the same time, and realizes the control of the light emitting intensity of the OLED through the intensity of the external light.SELECTED DRAWING: Figure 1

The disclosure provides a preparation method of a Y-shaped gate and a Y-shaped gate prepared by the method, and can be applied to the field of microelectronics technology. The method comprises the following steps: performing deep ultraviolet light irradiation treatment on a first electron beam photoresist located on the upper surface of a substrate to obtain a first photoresist layer; spin coating a second electron beam photoresist on the surface of the first photoresist layer to obtain a second photoresist layer; performing a first exposure and development operation on the first photoresist layer and the second photoresist layer to obtain a gate cap structure of the Y-shaped gate; performing a second exposure and development operation on the first photoresist layer after the first exposure and development operation to obtain a gate leg structure of the Y-shaped gate; and filling a target metal material into the gate cap structure and the gate leg structure by using a metal evaporation method to obtain the Y-shaped gate.

The invention provides a coordination type photoacid generator, a preparation method thereof and application of the coordination type photoacid generator in a metal oxygen cluster photoresist. The invention aims to expand the variety of photoresist materials and solve the problem of low exposure sensitivity of metal oxygen cluster compounds. The coordination type photoacid generator is characterized in that an anion part (carboxylic acid group) of the coordination type photoacid generator contains a functional group which can generate specificity and moderate intensity coordination with core metal ions of a metal oxygen cluster, coordination driven self-assembly or pre-organization of the PAG and the metal oxygen cluster is realized, so that accurate nano-scale positioning is realized; the metal oxygen cluster photoresist prepared by the preparation method disclosed by the invention has the advantages of improving the sensitivity of the metal oxygen cluster photoresist, inhibiting ineffective acid diffusion, improving the uniformity and stability of a material and realizing high-resolution imaging, is suitable for technologies such as ultraviolet lithography, electron beam lithography and extreme ultraviolet lithography, shows high-sensitivity and high-resolution imaging capability and low line width roughness, and has wide application value.

The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The non-chemically-amplified resist composition can be used in a patterning process. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by EB or EUV lithography, the resist composition exhibits a high sensitivity and resolution.

The application discloses a focusing method for electron beam lithography, which comprises the following steps: obtaining a lithography pattern of a sample to be lithographed which is formed with a photoresist layer; determining a device setting area and a non-device setting area of the sample to be lithographed according to the lithography pattern; forming a conductive pattern on the surface of the photoresist layer in the non-device setting area of the sample to be lithographed; controlling the electron beam to perform focusing parameter adjustment by using the conductive particles in the conductive pattern; and when the focusing parameter of the electron beam is adjusted to a preset parameter range, controlling the electron beam to perform exposure on the photoresist layer at a position to be exposed in the device setting area, so as to transfer the lithography pattern to the sample to be lithographed. The technical scheme of the application can ensure that the process of electron beam lithography has high resolution, thereby improving the yield of integrated circuits prepared by using the electron beam lithography process.

The invention provides a mask and a preparation method thereof, and relates to the technical field of semiconductors, and the preparation method comprises the following steps: manufacturing a mother set pattern on a first substrate through an electron beam lithography process; the mother set pattern is reversely reprinted on a working mold; the mother set pattern on the working mold is imprinted on a second substrate; and repeatedly coining the mother set pattern on the second substrate, and forming a plurality of preset arranged mother set patterns on the second substrate so as to obtain the mask with the preset pattern. A nano-imprinting photoetching process and an electron beam photoetching process are introduced to be matched for production, only a single mother set pattern is processed in the electron beam photoetching process, photoetching processing of a mask chip array on the front side is completed by the nano-imprinting photoetching process, the area and workload of direct writing of a single electron beam photoetching sheet are reduced, and the production efficiency is improved. The electron beam lithography single-chip process time is greatly reduced, the overall tape-out efficiency is improved, the productivity is optimized, and the cost is greatly reduced.

The invention discloses a chlorine-free small-size deep etching method based on an InP substrate. Comprising the following steps: providing an InP substrate, and depositing a layer of hard film on the InP substrate through chemical vapor deposition equipment or electron beam evaporation equipment; photoresist is spin-coated on the hard thin film; carrying out patterning exposure on the photoresist by using electron beam lithography direct writing equipment, and then developing; the method comprises the following steps of: etching hard films such as SiO2 by using gas A through first plasma etching equipment to form a patterned mask; and etching the InP substrate by using gas B through second plasma etching equipment to form an InP etching pattern groove. According to the method, CH4: H2 is used for etching InP, chlorine is prevented from being used, a structure with a small size can be etched, and the method has a high aspect ratio and good side wall roughness.