82 results about "Electron-beam lithography" patented technology

The invention belongs to the technical field of micro-nano processing, and particularly relates to a Pt-HSQ-based high-resolution X-ray Fresnel zone plate and a preparation method thereof. According to the X-ray Fresnel zone plate, a Pt-HSQ metal-inorganic material system is adopted, a diffraction structure with a large aspect ratio and Pt material quasi-periodic dense stripes specially needed by an X-ray zone plate lens is formed through electron beam lithography and an ALD process, and diffraction focusing from a soft X-ray wave band to a hard X-ray wave band and imaging with an amplification function are achieved. The wave zone plate has excellent mechanical stability, and the irradiation resistance and morphology retentivity of the wave zone plate under high-energy irradiation are remarkably improved. And high-resolution X-ray focusing elements with different energy wavebands and different focal lengths can be prepared according to geometric design and material selection of the wave zone plate. The lens is suitable for microscopic imaging, coherent diffraction imaging, X-ray spectrum, nanometer detection and other scenes of a synchrotron radiation or off-line laboratory X-ray light source, and has wide popularization value and application prospect.

This invention belongs to the field of micro-nano technology and electron beam lithography application technology, specifically relating to a diffraction-based waveguide electronic beam exposure method and system that balances high speed with sub-nanometer writing field stitching errors. The method includes: designing a test pattern based on an AR waveguide structure and actual task exposure time; conducting exposure experiments based on the test pattern, testing and recording the stitching error values ​​at the writing field boundaries and four corner positions, and establishing a stitching error database under different writing field correction values; obtaining a coefficient matrix and initial error through polynomial fitting based on the stitching error database under different writing field correction values; and obtaining correction variables for preset design values ​​based on the coefficient matrix and the initial error, and correcting the exposure accordingly. This invention provides an easily implemented electron beam writing field pre-calibration method that can truly meet the dual requirements of high-precision and high-efficiency exposure in industrial production.

The application provides a photoelectric detector with wide spectrum response characteristics and a preparation method and application thereof, and the device adopts a two-dimensional device structure of Au / WSe2 / PbI2 / HfO2 / Si. The device preparation process is as follows: firstly, two-dimensional PbI2 nanosheets are prepared on the surface of a HfO2 / Si substrate through a solution method. Then, WSe2 nanosheets are stacked on the surface of the PbI2 nanosheets by adopting a van der Waals integration process to prepare a WSe2 / PbI2 heterostructure, and the process needs to be highly accurately operated to ensure that the hetero-interface is clean and in close contact. Subsequently, a gold (Au) electrode is accurately drawn and deposited on the surface of the WSe2 / PbI2 heterostructure by using electron beam lithography (EBL) and vacuum coating technology. The photoelectric detector exhibits wide spectrum detection characteristics and has good spectrum response capability in the ultraviolet, visible light and near-infrared ranges. The application provides a solid material foundation and technical support for the fields of wide spectrum imaging and optical communication.

The present application relates to the technical filed of semiconductor chip nanofabrication, provides a method for preparing a chip embedded composite for electron beam lithography. The preparation method includes: providing a composite structure, the composite structure including a first substrate, a conductive layer disposed on a surface of the first substrate and a chip array disposed on a surface of the conductive layer away from the first substrate; arranging a protective layer on an outer surface of the chip array, where the protective layer covers the chip array; encapsulating and curing the composite structure and the protective layer by a polymer solution; removing the protective layer to obtain the chip embedded composite.

The invention relates to a method for preparing a tin-diol dry photoresist by using molecular layer deposition, which comprises the following steps of: preparing a tin-based mixed film by using a tetradimethylamine tin (tin tetrachloride) metal source and a diol organic source as raw materials through a molecular layer deposition (MLD) technology, and taking the tin-based mixed film as a high-resolution dry positive photoresist. The tin-based photoresist can be used in electron beam lithography (EBL), extreme ultraviolet lithography (EUVL) and beyond extreme ultraviolet lithography (BEUVL). Under 50 kilovolt electron beam exposure, the resolution ratio can reach 7 nanometers at 2000 [mu] C / cm < 2 >; under extreme ultraviolet exposure, the resolution ratio can reach at least 18 nanometers at 22 mj / cm < 2 >; under exposure beyond extreme ultraviolet, the resolution ratio at 520 mj / cm < 2 > reaches at least 32 nanometers. The tin-based mixed photoresist disclosed by the invention has a wide application prospect, and a new technical scheme is provided for developing a semiconductor dry photoresist with higher performance.

This disclosure provides a composite dielectric structure, a device having the same, and a fabrication method thereof. The fabrication method includes operations S1-S4. Operation S1: Depositing source and drain ohmic metals at designated locations on the surface of an epitaxial wafer; Operation S2: Using photoresist and electron beam lithography to create the required window for the gate structure; Operation S3: Etching a portion of the epitaxial wafer surface structure corresponding to the window and removing the photoresist to fabricate a gate trench; Operation S4: Growing AlN / SiN within the gate trench. X Composite dielectrics enable the fabrication of devices with composite dielectric structures.

This invention belongs to the field of micro / nano fabrication and optical testing technology, specifically relating to a high-resolution test card for dielectric materials in the EUV and soft X-ray bands. The test card includes a substrate and a Siemens star test pattern formed thereon. The test card uses silsesquioxane (HSQ) as the structural material and is fabricated using electron beam lithography. The structural height can reach 500 nm with a minimum linewidth of 10 nm. This invention utilizes the dual absorption and strong phase modulation capabilities of HSQ in the EUV / soft X-ray bands, making it suitable for both absorption contrast and phase contrast imaging modes in system resolution calibration and performance evaluation. This test card offers advantages such as standardized patterns, high resolution, adjustable contrast, and good fabrication consistency, providing crucial metrological support for the performance testing of high-end EUV / soft X-ray optical imaging and lithography systems.

The invention discloses a preparation method of a near-infrared achromatic super lens based on a nanoimprint technology, and relates to the technical field of micro-nano manufacturing. The preparation method comprises the following steps: 1, designing a target super lens by using finite element simulation software based on a time domain finite difference method, a particle swarm algorithm and a scalar diffraction algorithm; 2, preparing a silicon female die corresponding to the super lens according to the designed target super lens parameters by using electron beam lithography and deep reactive ion etching; 3, carrying out surface fluorination treatment on the silicon female die; and 4, preparing a corresponding sub-mold according to the silicon female mold, carrying out imprinting by using a nano imprinting technology and the sub-mold, and finally, etching the a-Si layer on the surface of the substrate through deep reactive ion etching by taking imprinting glue as an etching mask to obtain the super lens. According to the invention, the nanoimprint technology can be used for manufacturing the near-infrared achromatic superlens, so that the near-infrared achromatic superlens gets rid of dependence on a high-precision photoetching machine.

The application belongs to the field of organic / polymer neuromorphic devices, and specifically provides a nano neuromorphic device with an organic two-dimensional conjugate symmetric polymer as an active layer, and a preparation method and application thereof. The nano device is manufactured in the form of an 8*8 cross switch array through electron beam lithography technology and stripping method, and the width of the word line and the bit line is 100 nm and 200 nm respectively, which is a very small nano structure. The device realizes record-high yield of the polymer memristor with minimization and low potential, and simultaneously realizes fast response within 20-40 ns, the variation range of D2D is less than 10%, the device yield is higher than 90%, and the device can reach 50-100 nm scale, and the power consumption is lower than 20 J / bit. The polymer memristor array can realize storage and calculation integration, and can be used for information storage, and has excellent application prospect in the field of artificial intelligence.

The invention relates to a method for regulating and controlling the retentivity of a ferroelectric domain wall memory through the size of a device, which comprises the following steps of: epitaxially growing a BiFeO3 film with the thickness of 200nm on a SrTiO3 (001) substrate which is beveled by 2 degrees, ensuring the quality of the film by adopting pulsed laser deposition, and forming a Pt planar electrode structure on the surface of the film through magnetron sputtering, electron beam photoetching and reactive ion etching, the polarization overturning area is controlled by adjusting the electrode gap, the retentivity is tested by combining an I-V curve and a PFM spectrum, and the result shows that when the overturning area is larger than 7 * 10 < 6 > nm < 2 >, the device can keep the polarization state for a long time, and when the area is reduced to 1.3 * 10 < 4 > nm < 2 >, the retentivity disappears. According to the invention, the retention rule of size dependence is defined, the influence of a depolarization field and ferroelastic energy is effectively overcome, and the reliability and information retention time of the memory are remarkably improved.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

A device capable of suppressing changes in the influence of the Coulomb effect during a shot in multi-beam writing is provided. [Configuration] A drawing device 100 according to one embodiment of the present invention is characterized by comprising a multi-photoelectron source 10 that emits a multi-photoelectron beam, a photoelectron source control circuit 131 that controls the multi-photoelectron source so that, for each shot of the multi-photoelectron beam, all photoelectron beams that become ON beams among the multi-photoelectron beams in that shot have a common irradiation time and the individual beam current of each photoelectron beam is maintained constant during the shot, and a drawing mechanism 150 that draws a pattern on a sample using the multi-photoelectron beam whose individual beam current is maintained constant during the shot.

SOLUTION: The present invention discloses a device for integrating an OLED and a phototransistor and an electron beam etching method, in which an OLED and a phototransistor in a series connection relationship are connected by an insulating electron beam photoresist using an electron beam etching process and manufactured on a substrate. The phototransistor includes a gate, a gate insulating layer, a source, a conductive channel, and a drain, and the OLED includes a semi-transparent anode, a hole transport layer, a light-emitting and electron transport layer, a reflective cathode, and a substrate.EFFECT: The present invention realizes the integration of multiple functions of the organic electronic device, has the functions of light emitting display and light sensing at the same time, and realizes the control of the light emitting intensity of the OLED through the intensity of the external light.SELECTED DRAWING: Figure 1

The invention provides a coordination type photoacid generator, a preparation method thereof and application of the coordination type photoacid generator in a metal oxygen cluster photoresist. The invention aims to expand the variety of photoresist materials and solve the problem of low exposure sensitivity of metal oxygen cluster compounds. The coordination type photoacid generator is characterized in that an anion part (carboxylic acid group) of the coordination type photoacid generator contains a functional group which can generate specificity and moderate intensity coordination with core metal ions of a metal oxygen cluster, coordination driven self-assembly or pre-organization of the PAG and the metal oxygen cluster is realized, so that accurate nano-scale positioning is realized; the metal oxygen cluster photoresist prepared by the preparation method disclosed by the invention has the advantages of improving the sensitivity of the metal oxygen cluster photoresist, inhibiting ineffective acid diffusion, improving the uniformity and stability of a material and realizing high-resolution imaging, is suitable for technologies such as ultraviolet lithography, electron beam lithography and extreme ultraviolet lithography, shows high-sensitivity and high-resolution imaging capability and low line width roughness, and has wide application value.

The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The non-chemically-amplified resist composition can be used in a patterning process. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by EB or EUV lithography, the resist composition exhibits a high sensitivity and resolution.

The application discloses a focusing method for electron beam lithography, which comprises the following steps: obtaining a lithography pattern of a sample to be lithographed which is formed with a photoresist layer; determining a device setting area and a non-device setting area of the sample to be lithographed according to the lithography pattern; forming a conductive pattern on the surface of the photoresist layer in the non-device setting area of the sample to be lithographed; controlling the electron beam to perform focusing parameter adjustment by using the conductive particles in the conductive pattern; and when the focusing parameter of the electron beam is adjusted to a preset parameter range, controlling the electron beam to perform exposure on the photoresist layer at a position to be exposed in the device setting area, so as to transfer the lithography pattern to the sample to be lithographed. The technical scheme of the application can ensure that the process of electron beam lithography has high resolution, thereby improving the yield of integrated circuits prepared by using the electron beam lithography process.

The invention provides a mask and a preparation method thereof, and relates to the technical field of semiconductors, and the preparation method comprises the following steps: manufacturing a mother set pattern on a first substrate through an electron beam lithography process; the mother set pattern is reversely reprinted on a working mold; the mother set pattern on the working mold is imprinted on a second substrate; and repeatedly coining the mother set pattern on the second substrate, and forming a plurality of preset arranged mother set patterns on the second substrate so as to obtain the mask with the preset pattern. A nano-imprinting photoetching process and an electron beam photoetching process are introduced to be matched for production, only a single mother set pattern is processed in the electron beam photoetching process, photoetching processing of a mask chip array on the front side is completed by the nano-imprinting photoetching process, the area and workload of direct writing of a single electron beam photoetching sheet are reduced, and the production efficiency is improved. The electron beam lithography single-chip process time is greatly reduced, the overall tape-out efficiency is improved, the productivity is optimized, and the cost is greatly reduced.

The invention relates to the technical field of semiconductor manufacturing, in particular to an electron beam lithography morphology control method based on a pHEMT grid electrode, which comprises the following steps: establishing a geometric model, constructing a coordinate system by taking a grid electrode pattern center line as a y axis and a substrate surface as an x axis, and forming a target photoresist profile by a pair of hyperbolic curve parts symmetrical about the y axis; discretizing the hyperbolic contour into a plurality of layers along a y axis, calculating an x coordinate corresponding to each layer, distributing an exposure dose based on an exposure dose-line width after development calibration relationship, and establishing a mapping relationship between the position and the dose; the mapping relation is compiled into a control file, electron beam exposure is carried out on the photoresist layer of the GaAs substrate, the exposure dose is modulated in real time, and the photoresist morphology with a smooth side wall and accurate line width is formed at a time, so that the problem of grid line width control uncertainty caused by an existing hot reflux process is solved, meanwhile, the technological process is simplified, and the production efficiency is improved. And the performance consistency and the production yield of the device are improved.

This invention relates to a dual-coordinated cyclic hexanuclear tin oxide cluster compound, a photoresist composition, and its application in photolithography, belonging to the fields of photolithography materials and semiconductor manufacturing technology. The composition uses a cyclic hexanuclear tin oxide cluster as the active component, is compatible with common solvents and coating processes, and exhibits excellent thermal stability (significant mass loss only occurs above 260°C), meeting the requirements of coating, pre-baking, and exposure processes. This material demonstrates good film-forming properties, enabling the formation of uniform, low-defect thin films on silicon wafers, suitable for deep ultraviolet (DUV) lithography, electron beam (EB) lithography, and extreme ultraviolet (EUV) lithography. In these platforms, the photoresist composition can achieve high resolution, low line edge roughness (LER), and high-fidelity pattern transfer, exhibiting high etching resistance, meeting the performance and process requirements of advanced microelectronics manufacturing.

The invention relates to a preparation method and application of low-dispersity polymethyl methacrylate. The method comprises the following steps: (1) forming a polymerization reaction system by using a chain transfer agent, a free radical initiator, a methyl methacrylate monomer and an organic solvent; (2) removing oxygen from the polymerization reaction system, and carrying out polymerization reaction; (3) precipitating the polymerization reaction system by using a poor solvent to obtain polymethyl methacrylate; wherein the chain transfer agent has the following chemical formula I: wherein R1 is a substituted or unsubstituted aryl group, R2 and R3 are each independently CnH2n + 1, and n represents an integer from 1 to 5; wherein the molar ratio of the chain transfer agent to the free radical initiator to the methyl methacrylate monomer is 1: 0.05: 1000 to 1: 0.2: 7000, preferably 1: 0.1: 5500 to 1: 0.1: 6500. According to the method, the film forming uniformity and the pattern resolution of the PMMA photoresist are remarkably improved, and the requirement of high-precision electron beam lithography is met.

The application provides an electron beam lithography machine sample taking and delivering system, which is an electron beam lithography machine sample taking and delivering system based on a cavity isolation technology, a pre-receiving cavity (equipped with a two-stage vacuum system of a molecular pump and a mechanical pump) with independent vacuum pumping capacity is arranged to dynamically isolate the main sample cavity, and a door valve is used for realizing local vacuum maintenance during sample transmission. The technical effect is that: through the pre-receiving cavity pre-vacuum and the sample cavity vacuum isolation mechanism, the sample changing operation only needs to perform local vacuum pumping on the pre-receiving cavity for a short time, and compared with the traditional whole cavity vacuum pumping process, the speed is significantly improved; the molecular pump group operation time is shortened, the single sample changing energy consumption is reduced; the modular vacuum system design reduces the equipment area and the vacuum pipeline complexity, and through the closed loop control of the air release valve and the vacuum gauge, the system reliability and the maintenance convenience are significantly improved.

The present application relates to the technical field of semiconductor integrated circuits, and particularly relates to a method for realizing steep and high-uniformity dielectric etching based on high-purity octafluorocyclobutane and application thereof. The method for dielectric etching of the present application prepares a patterned mask on the surface of a dielectric layer material to be etched through an electron beam lithography process; etches the dielectric layer material covered with the patterned mask using plasma formed from an etching gas to realize a vertical etching groove with a width of 20 nm to 150 nm; and the etching gas comprises high-purity octafluorocyclobutane gas with a purity of more than 99.99999%. The method for dielectric etching of the present application takes advantage of the high purity of high-purity octafluorocyclobutane gas, reduces the damage of etching gases such as oxygen and high-fluorocarbon ratio gas to the sidewall etching protection layer, thereby improving the steepness of the sidewall of nanoscale silicon oxide via etching, and simultaneously making the etching process relatively stable under different etching sizes.

Provided is a non-chemically amplified resist composition that is excellent in sensitivity and limit resolution in photolithography using high-energy rays, particularly in electron beam (EB) lithography and EUV lithography. 【Solution means】A resist composition characterized by containing at least one hypervalent iodine compound, a carboxy group-containing compound, and a solvent selected from the following formulas (1), (2), and (3). TIFF2026122764000327.tif33108 (In the formula, n1 is 0 to 2, n2 is 0 to 1, and n3 is 0 to 3. R 11 ~R 13 is a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms. X 1 ~X 3 is *-O-X A1 -, or *-X A2 (-R 14 )-C(=O)-. X A1 is a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atoms. X A2 is nitrogen or sulfur. R 14 is a hydrogen atom, a halogen atom, or a hydrocarbyl group having 1 to 20 carbon atoms.)

The invention relates to a high-temperature self-stabilization ferroelectric domain wall memory based on bismuth oxide (BFO) and a preparation method thereof, a memory function layer is formed by sequentially depositing an STO buffer layer with the thickness of 5 nm, a BFO film with the thickness of 100 nm and a planar Pt electrode pair on a strontium titanate (STO) substrate in the [001] direction, the STO substrate is obliquely cut by 0.2 degree in the [100] direction, the BFO film is of a stripe domain structure, and the electrode gap is not smaller than 500 nm. Through the limiting effect of a beveled substrate step, the BFO ferroelectric film only forms two polarization orientations, a periodic stripe domain structure is obtained, the polarization overturning controllability is improved, the electrode is prepared by adopting an electron beam photoetching and ion etching combined process, the electric domain overturning is ensured to penetrate through the film thickness, and the performance of the BFO ferroelectric film is improved. After 105 times of voltage pulse cycles at a high temperature of 135 DEG C, the device still keeps a rectification ratio greater than or equal to 25: 1, the turnover polarization retentivity is high, and the domain wall current attenuation rate is small. The bottleneck that a traditional FeRAM fails in a high-temperature environment is broken through, the storage density potential is larger than 1 Gb, and the FeRAM has the effect of being suitable for high-temperature application scenes such as aerospace, vehicle-mounted electronics and geothermal exploration.

This invention relates to a method for electron beam negative photoresist lift-off, comprising: providing a substrate; forming a sacrificial photoresist layer on the substrate; forming an etch-resistant electron beam negative photoresist layer on the sacrificial photoresist layer; subjecting the electron beam negative photoresist layer to electron beam exposure to form a target pattern; developing the exposed electron beam negative photoresist layer; dry etching the sacrificial photoresist layer to form an undercut structure; depositing a target coating on the substrate; and removing the sacrificial photoresist layer and the target coating and electron beam negative photoresist layer thereon to complete the lift-off. The beneficial effects of this invention are: it uses electron beam lithography to develop a smaller electron beam negative photoresist layer, then places it in plasma etching, and obtains the undercut structure by dry etching the sacrificial photoresist layer. This reduces the area requiring photolithography and allows the negative photoresist to form an ideal undercut structure during electron beam exposure, ensuring smooth lift-off of the negative photoresist during the lift-off process.

This invention discloses a MEMS optimized process for a wide-temperature-range silicon pressure sensor chip, comprising forming a honeycomb-shaped stress buffer cavity on a double-sided polished silicon wafer, generating a bilayer composite film on the surface of the top silicon layer of the SOI wafer, and then bonding them to form a heterostructure; on the surface of the top silicon layer of the SOI wafer, a depth-direction doping concentration gradient is formed by a three-stage variable-angle ion implantation process, and a temperature compensation electrode is fabricated by electron beam lithography to construct a gradient-doped piezoresistive network, a corrugated SiON dielectric layer is grown on the surface, tapered vias are etched, and copper metal is filled using a pulse electroplating process to achieve internal interconnection, forming a metal interconnect structure; and gradient SiN is sequentially deposited on its surface. X A thin film is used to coat the surface of a heterogeneous structure with Au / Sn eutectic solder. A miniature Pt temperature sensor is integrated into the package cavity and coated with a polysilazane composite protective layer. This effectively improves the performance stability and reliability of the chip over a wide temperature range, and adapts it to complex high and low temperature environments.

The invention provides an electron beam lithography dose distribution determination method and device, equipment and a storage medium, and belongs to the field of computer technology and semiconductor manufacturing. According to the method, the first dose distribution under the low resolution is iteratively updated, and due to the fact that the number of elements included in the first dose distribution is small, the data calculation amount of each updating process is small, and then the calculation time is shortened. After the optimal first dose distribution under the low resolution is obtained, the number of elements contained in the first dose distribution is increased based on the high resolution, and the second dose distribution is obtained, so that the second dose distribution under the high resolution has a good initial value. On the basis, the optimal second dose distribution under the high resolution can be obtained by carrying out iteration updating for a few times, namely, the number of iteration updating times under the high resolution is reduced, and then the calculation time consumption is shortened. Therefore, according to the method, the overall calculation time for determining the dose distribution is shortened, the efficiency is improved, and the calculation cost is reduced.

The application discloses a superconducting wire single-photon detector, a preparation method and a superconducting wire temperature detection method, and relates to the technical field of superconductivity, wherein the superconducting wire single-photon detector comprises a substrate, a superconducting thin film material and a metal electrode, the superconducting thin film material and the metal electrode are arranged on the substrate, the superconducting thin film material forms a nanowire after electron beam lithography treatment, the metal electrode is located at two ends of the superconducting thin film material, and the substrate, the nanowire and the metal electrode are all encapsulated in an encapsulating material.The detector of the application can not only adapt to the low-temperature environment of liquid helium, but also stably generate and send voltage pulses, thereby realizing rapid response and early warning of the superconducting wire quenching.

The present invention is a hypervalent iodine compound having a structure represented by the following general formula (1), where R1 and R2 each independently represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms and optionally containing a heteroatom, the R1 and the R2 optionally being bonded to each other to form a ring together with the carbon atoms bonded thereto and the atoms between the carbon atoms. This can provide: a non-chemically amplified resist composition excellent in sensitivity and resolution in lithography using a high-energy beam, especially electron beam (EB) lithography and EUV lithography; a laminate obtained from the resist composition; and a patterning process using the resist composition.

The invention discloses a distributed feedback laser based on an asymmetric sampling grating and a manufacturing method thereof, and belongs to the technical field of laser, in a grating structure of the laser, the position of equivalent pi phase shift deviates from the center of a cavity, and the duty ratio of the sampling grating, namely the ratio of the length of a sampling window to a sampling period, is less than 0.5. According to the invention, the reconstruction equivalent chirp technology is adopted, and the design of asymmetric phase shift and asymmetric coupling coefficient is combined, so that the forward output power is remarkably improved. In the structure of the laser, asymmetric regulation and control of photon density distribution are realized by optimizing the phase shift position and the duty ratio of the sampling grating, so that the forward output power is improved on the premise of keeping the stability of a single longitudinal mode. According to the method, the sampling structure is prepared by adopting a micron-sized photoetching technology, so that the dependence on high-precision electron beam photoetching is reduced, and the manufacturing tolerance and the cost effectiveness are improved. Experimental results show that the laser is stable in spectrum when working at the C wave band, and the side mode rejection ratio is higher than 50 dB.