67results about How to "Short channel length" patented technology

A power transistor having of a plurality of vertical MOSFET devices combined in parallel to achieve high-performance operation and methods of fabricating this device.

A combination EEPROM and Flash memory is described containing cells in which the stacked gate transistor of the Flash cell is used in conjunction with a select transistor to form an EEPROM cell. The select transistor is made sufficiently small so as to allow the EEPROM cells to accommodate the bit line pitch of the Flash cell, which facilitates combining the two memories into memory banks containing both cells. The EEPROM cells are erased by byte while the Flash cells erased by block. The small select transistor has a small channel length and width, which is compensated by increasing gate voltages on the select transistor and pre-charge bitline during CHE program operation.

The invention provides a thin film transistor having current driving force that can be substantially improved. By heat treatment, the IGZO layer (45) from which oxygen is taken away by the titanium electrodes (65) becomes the low resistance regions (40b), and the IGZO layer (45) from which oxygen is not taken away remains as the high resistance region (40a). In this state, when the gate voltage is applied to the gate electrode (20), electrons in the low resistance regions (40b) near the boundaries with the high resistance region (40a) move respectively to the titanium electrode (65) sides. As a result, the length of the low resistance regions (40b) becomes short, and oppositely, the length of the high resistance region (40a) becomes longer by the size of the shortened low resistance regions. However, the electrical channel length (Le) becomes shorter than the source/drain interval space (Lch) as the limit resolution of the exposure device, and the current driving force becomes large.

A method for manufacturing an electronic thin-film component, an apparatus implementing the method, and an electronic thin-film component manufactured according to the method. A lowermost, galvanically uniform conductive layer of electrically conductive material is first formed on a substantially dielectric substrate, from which lowermost conductive layer conductive areas are galvanically separated from each other to form an electrode pattern. On top of the electrode pattern it is then possible to form one or several upper passive or active layers required in the thin-film component. The separation of the lowermost conductive layer into an electrode pattern takes place by exerting on the lowermost conductive layer a machining operation based on die-cut embossing, i.e. embossing, wherein the relief of the machining member used in the machining operation causes a permanent deformation on the substrate and at the same time embosses areas from the conductive layer into conductive areas galvanically separated from each other. The method and apparatus are suitable for manufacturing thin-film components in a roll-to-roll process.

The invention provides a method for transferring heat by conduction to the internal heat acceptor of an external combustion engine. Fuel and air are introduced and mixed to form an air/fuel mixture. The air/fuel mixture is directed into a catalytic reactor that is positioned substantially adjacent to the heater head. Heat is transferred via conduction from the catalytic reactor to the heater head and the catalytic reaction products are exhausted.

The invention provides a method for transferring heat by conduction to the internal heat acceptor of an external combustion engine. Fuel and air are introduced and mixed to form an air/fuel mixture. The air/fuel mixture is directed into a catalytic reactor that is positioned substantially adjacent to the heater head. Heat is transferred via conduction from the catalytic reactor to the heater head and the catalytic reaction products are exhausted.

A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent.

It is provided an organic semiconductor element having an FET which can control a channel length to a small value and does not cause a rise in contact resistance due to a step portion, and an organic light emitting display device with a large aperture using the same. A first conductive layer (2) which is one of source/drain electrodes is provided onto a substrate (1), and an organic semiconductor layer (3) and a second conductive layer (4) which is the other electrode of the source/drain electrodes are provided onto the first conductive layer (2). Then on a side face of the organic semiconductor layer or a front surface of the organic semiconductor layer (3) exposed by removing a part of the second conductive layer and a side face of the second conductive layer a gate electrode (third conductive layer) (6) is provided via an insulating layer (5), thereby to form an FET. The organic EL display device has the FET having such structure laminated on an organic EL section as a drive element.

Provided is a flexible vertical channel organic thin film transistor and a manufacture method thereof, which change the traditional configuration of the horizontal channel organic TFT and use the vertical channel configuration to tremendously shorten the channel length so that the TFT can obtain the larger source-drain current under the lower drive voltage; by using the flawless, high conductive and high transparent graphene material to manufacture the gate, the electronic performance of the TFT can be better; by using the hexagonal boron nitride material to manufacture the gate insulation layer to interact with the gate made by graphene, the electronic performance of the TFT can be promoted; because both the graphene and the hexagonal boron nitride materials are two dimension atomic layer structure material with better bendability and the channel layer uses the flexible organic semiconductor layer, the bendability of the entire TFT can be significantly promoted.

The tunable differential transconductor includes a tail current sink and a differentially-connected pair of FETs connected to the tail current source. At least one of the FETs is a composite FET that includes a main FET connected in parallel with a switchable tuning element. The switchable tuning element is operable to change an effective channel dimension, i.e., at least one of effective channel length and effective channel width, of the composite FET. In the method, a differential transconductor that includes a tail current sink and a differentially-connected pair of composite FETs connected to the tail current sink is provided. The effective channel dimension of at least one of the composite FETs is changed to establish one or more of a desired transconductance, a desired transconductance linearity and a desired offset of the differential transconductor.

An organic TFT including an organic film, first and second electrodes each disposed in contact with opposite surfaces of the organic film each other; and a third electrode disposed at a specified distance from each of the first and second electrodes, the third electrode being applied with a voltage to control current flowing from one of the first and the second electrodes to the other through the organic film; and the organic film including a compound represented by general formula [1]. In this TFT, the carrier moves from one of the first and the second electrodes to the other in the direction of the film thickness of the organic film. The device structure realizes the enough short channel length. The organic film provides the higher mobility, thereby the organic TFT with the sufficiently higher speed response is realized.

A semiconductor device includes a semiconductor substrate including a trench, a gate insulating layer, and a gate electrode. A step is arranged in a side surface of the trench. The semiconductor substrate includes first and second regions, a body region, and a side region. The body region extends from a position being in contact with the first region to a position located on the lower side with respect to the step. The body region is in contact with the gate insulating layer at a portion of the upper side surface located on a lower side with respect to the first region. The second region is located on a lower side of the body region and in contact with the gate insulating layer at the lower side surface. The side region is in contact with the gate insulating layer at the step surface and connected to the second region.

Even if reaction gas flows into a substantially rectangular anode-side and cathode-side gaps formed between an annular main body portion and a membrane electrode assembly in an anode side and a cathode side of a fuel cell, the reaction gas is prevented from flowing out from an outlet without passing through an electrode to cause degradation of power generation efficiency. At least one of anode-side gasket and cathode-side gasket in the fuel cell is provided with an extra sealing portion connected to an annular main body portion in such a manner that, among two pairs of gap portions opposing to each other in the anode-side gap and the cathode-side gap, the extra sealing portion intersects with one pair of gap portions having a larger pressure gradient of fuel gas and oxidant gas in a direction from an upstream side to a downstream side of a fuel gas flow channel and an oxidant gas flow channel.

After forming a first semiconductor region of a first conductivity type in a semiconductor substrate, a trench reaching a given portion of the first semiconductor region is formed in the semiconductor substrate. Then, after forming a gate insulating film on an inner wall of the trench, a second semiconductor region of a second conductivity type is formed on the first semiconductor region in the semiconductor substrate, and thereafter, a third semiconductor region of the first conductivity type is formed on the second semiconductor region in the semiconductor substrate. Also, a gate electrode of the first conductivity type is formed on the gate insulating film within the trench. The gate electrode is formed on the gate insulating film so as to extend over the second semiconductor region, a portion of the first semiconductor region disposed below the second semiconductor region and a portion of the third semiconductor region disposed on the second semiconductor region.