1073 results about "Low resistance" patented technology

The invention relates to the technical field of conductive copper paste, in particular to conductive copper paste prepared by combining liquid nonferrous metal with graphene and a preparation method of the conductive copper paste. The preparation method comprises the following steps: weighing nano-copper coated graphene composite powder, a liquid nonferrous metal, a binder, trifluoropropyltrimethoxysilane, an auxiliary agent and copper powder, and then preparing trifluoropropyltrimethoxysilane into a dilute solution; copper powder and the nano-copper coated graphene composite powder are mixed to obtain composite powder; the liquid nonferrous metal and the composite powder are stirred to obtain metal paste; and adding a resin solution and an auxiliary agent into the metal paste to form printing paste, and then standing and curing. According to the conductive copper paste, the liquid nonferrous metal serves as a main binding phase, the defect that the welding thrust is low due to a traditional resin system is overcome, the problems of dispersion and interface compatibility are solved through cooperation of the nano-copper-coated graphene and the silane coupling agent, and finally the conductive copper paste with extremely low resistance, high stability and ultrahigh welding thrust is obtained.

The invention discloses multi-solvent synergistically activated low-temperature semi-sintered copper paste and a preparation method and application thereof, and belongs to the technical field of conductive paste. The multi-solvent synergistically activated low-temperature semi-sintered copper slurry comprises the following raw material components in percentage by mass: 82-88% of conductive filler, 2-3% of a resin carrier, 4-7% of an activating solvent, 4-7% of a dispersing solvent and 2-3% of a curing agent. Through cooperation of multiple solvents, full-stage activation of the copper particles is achieved, pre-connection and sintering of the copper particles before resin is completely crosslinked and cured are promoted, densification of the overall structure is improved, the insulation barrier effect of the resin is effectively avoided, the resistivity is reduced, meanwhile, inhibition of the resin on sintering of the copper particles is solved, and the service life of the copper particles is prolonged. And good balance between conductivity and interface adhesion is realized. Through resin curing, chemical bonding between the slurry and the substrate can be enhanced, a metal bond network among copper particles is expanded, and mechanical connection stability and electrical performance are guaranteed.

The invention relates to the technical field of crystal material preparation, in particular to a layered selenide Ge3Sb2Se5 semiconductor material and a preparation method thereof. The preparation method of the layered selenide Ge3Sb2Se5 semiconductor material comprises the following steps: grinding a Ge3Sb4Se7 material, putting the ground Ge3Sb4Se7 material into a quartz tube, adding iodine particles, performing vacuum packaging in the quartz tube, putting one end, with raw materials, of the quartz tube into a high-temperature region, and putting one end, without raw materials, of the quartz tube into a low-temperature region; raising the temperature to 400 + / -25 DEG C at the low-temperature region end and 500 + / -25 DEG C at the high-temperature region end, preserving heat for 7 days, and naturally cooling to room temperature to obtain the Ge3Sb2Se5 semiconductor material. The crystal structure of the Ge3Sb2Se5 semiconductor material belongs to an orthorhombic system, and the Ge3Sb2Se5 semiconductor material has the characteristics of low thermal conductivity and low resistivity. According to the preparation method disclosed by the invention, the Ge3Sb2Se5 semiconductor material can be stably prepared, and a material is provided for physical property research of the Ge3Sb2Se5 semiconductor material and preparation of semiconductor photoelectric devices and the like.

The invention belongs to the technical field of flexible transparent film electrodes, and particularly relates to a flexible indium tin oxide film electrode, a preparation method and a flexible solar cell. According to the flexible indium tin oxide thin film electrode provided by the invention, after the processes of pre-treating substrates such as PET, covering an acrylic resin hard coating, depositing a SiO2 transition layer and the like, the adhesive force of the indium tin oxide conductive thin film is improved through the indium tin oxide conductive thin film deposited through alternate radio frequency magnetron sputtering and direct current pulse magnetron sputtering; the bottom layer deposited by radio frequency magnetron sputtering is used for providing an interface seed layer for the fluorine-doped indium tin oxide conductive thin film layer deposited by direct current pulse magnetron sputtering and having high carrier concentration and low resistance, and the top layer is used for providing protection, so that the conductivity, environmental stability and other properties of the flexible indium tin oxide thin film electrode are improved; the conductive performance is not easy to attenuate, the long-term use stability is good, and the technical problem that in the prior art, a flexible transparent film electrode is low in performance is solved.

The invention discloses a high-performance conductive adhesive doped with conductive nanoparticles, and belongs to the technical field of conductive adhesives. The high-performance conductive adhesive provided by the invention is prepared from the following raw materials in parts by weight: 50 to 100 parts of vinyl liquid silicone rubber, 100 to 400 parts of modified silver coated copper powder, 1 to 10 parts of nano silver powder I, 1 to 10 parts of epoxy silane modified prepolymer, 3 to 30 parts of hydrogen-containing silicone oil, 0.1 to 5 parts of platinum catalyst and 0.05 to 1 part of inhibitor. The silver-coated copper powder and the epoxy silane are modified, so that the conductivity and the binding power of the conductive adhesive are greatly improved, and the epoxy silane modified prepolymer can form strong covalent bond combination with the surface of an adhered object through a high-density epoxy group of the epoxy silane modified prepolymer; the nano-silver bulges on the surface of the modified silver coated copper powder increase the effective contact area and the number of contact points among the conductive filler particles, so that the conductive adhesive has the characteristics of high conductivity, low resistance, high adhesive strength and strong toughness.

The invention relates to the technical field of lithium ion batteries, in particular to a chromium-molybdenum double-doped lithium iron phosphate material as well as a preparation method and application thereof. The preparation method is used for solving the problems of low capacity, low electronic conductivity and poor cycling stability of the existing lithium iron phosphate material. According to the preparation method, chromium-molybdenum is doped into lithium iron phosphate, and the bond energy of a Cr-O bond and a Mo-O bond is stronger than that of a Fe-O bond, so that the dissolution loss of Fe < 2 + > in long-term circulation is reduced, and the battery capacity and the intrinsic electron conductivity of the material are improved; lithium iron phosphate is coated with nitrogen-doped carbon nanotubes, and nitrogen is doped in graphite crystal lattices of the carbon nanotubes, so that additional free electrons are provided, the intrinsic conductivity is improved, the resistance is reduced, the rate capability is improved, and the cycle life is prolonged; the polyaniline coating layer forms a barrier layer on the surface of the lithium iron phosphate particles, so that the cycle performance and the battery capacity are improved; the three components cooperate to improve the capacity, conductivity, rate capability and cycling stability of the material.

Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.

The invention relates to the technical field of memristors, and provides a chitosan-based memristor which comprises a substrate, a buffer layer, a composite dielectric layer and a top electrode which are sequentially stacked from bottom to top, the buffer layer is formed by spin-coating a PEDOT: PSS aqueous solution on the substrate and then carrying out heat treatment; the composite dielectric layer is formed by spin-coating the buffer layer with an ultrasonic composite solution formed by a graphene oxide aqueous dispersion and a chitosan acetic acid solution and then carrying out heat treatment. By adopting a collaborative architecture of the chitosan-graphene oxide composite dielectric layer and the PEDOT: PSS buffer layer, the prepared bio-based memristor has the effects of relatively high switching ratio, relatively low operating voltage and good performance stability. Meanwhile, based on stable high and low resistance states of the device, all seven basic logic operations including a NOT gate, an AND gate, an OR gate, a NAND gate, a NOR gate, an XOR gate and an XNOR gate are completely realized on a single bio-based platform, the function accuracy can reach 100%, and an unexpected effect is achieved.

The invention relates to the technical field of robot welding guns, in particular to a robot welding gun neck capable of reducing wire feeding resistance. The robot welding gun neck comprises an outer pipe and an inner pipe, the inner pipe is a special-shaped pipe, a wire feeding channel extending in the axial direction of the inner pipe is arranged on the upper portion of the inner pipe, and a notch is formed in the bottom side of the wire feeding channel; a set of idler wheels are arranged in the wire feeding channel, and welding wires can penetrate through cavities between the idler wheels and the notches. The structural form of the inner pipe and the outer pipe is adopted, the special grooves are designed in the inner pipe to serve as wire feeding channels, the roller sets are placed in the grooves, sliding friction with large resistance in the wire feeding process is changed into rolling friction with low resistance through the roller sets, and therefore the wire feeding stability is improved.

A strain gauge includes a flexible substrate, at least one resistor formed on or above the substrate, and a pair of electrodes formed on or above the substrate, electrodes being electrically coupled to the resistor via lines, respectively. Each of the lines electrically connects an end of the resistor and a given electrode, the end being situated in a width direction of a grid. Each of the lines includes a first metallic layer and a second metallic layer that is formed of a material having a lower resistance than a material of the first metallic layer, the second metallic layer being situated on the first metallic layer.

The invention relates to the technical field of microelectronic devices, in particular to a single-molecule memristor-rectifier device based on supramolecular assembly and a preparation method thereof. According to the preparation method, the guest molecule B is covalently connected with the tail end of the graphene electrode pair, so that stable and tight interface bonding between the supramolecular functional molecule and the electrode can be ensured; and then soaking the graphene electrode pair connected with the guest molecule B in a solution containing the host molecule A and the guest molecule C to form a supramolecular functional molecule between the graphene electrode pair. The guest molecule C in the supramolecular functional molecule has intrinsic oxidation-reduction activity, and the molecular structure of the guest molecule C can generate a reversible electron gain and loss process, so that controllable and reversible adjustment of charge distribution in the molecule is realized. Under the action of an electric field, through the reversible oxidation-reduction reaction of the guest molecule C, significant changes of intramolecular charge distribution and electron transmission characteristics are triggered, and finally reliable switching of high and low resistance states of the device is achieved.

The invention discloses a laminated assembly, a cell packaging structure and method, and a perovskite solar cell assembly, the peripheral edges of a glass cover plate and a glass substrate are not covered by a packaging adhesive film but are exposed, so that a structural space is provided for setting an independent peripheral sealant at the edge of the substrate; in the packaging heating process, gas generated by fusion of a packaging adhesive film, residual solvent steam and air between interfaces can freely flow along the annular gap, bubbles are prevented from being accumulated at the edge of a battery piece or the interface of a functional layer, meanwhile, the annular gap serves as a transverse exhaust channel with low resistance and a large circulation cross section, and the sealing performance of the battery piece is improved. According to the invention, gas can be exhausted to the outside of the assembly from the exhaust channel, dead cavity bubbles caused by exhaust dead angles in traditional lamination are avoided, generation of packaging bubbles is reduced fundamentally, and the appearance quality, reliability and efficiency of the assembly are improved.

The invention relates to a preparation method of a low-resistance silicon carbide coating based on a molybdenum / tantalum metal electrode, which comprises the following steps: S1, substrate pretreatment: carrying out mechanical micro roughening, ultrasonic cleaning and drying on a Mo / Ta electrode, and then reducing to remove an oxidation film; s2, Si-rich nucleation: taking methyl trichlorosilane as a Si / C common source, hydrogen as carrier gas / reducing gas and nitrogen as an n-type doping source for gas supply to form a compact nucleation layer; s3, main body deposition is conducted, specifically, the temperature is adjusted to 1140-1180 DEG C, the total pressure is maintained to be 80-120 Torr, and gas supply continues to be conducted for deposition; s4, annealing and dechlorination: stopping methyl trichlorosilane, keeping hydrogen and nitrogen flushing, and then annealing; and S5, cooling and shaping: cooling and taking out the sample annealed in the step S4, and adjusting the surface roughness to a set value to obtain the low-resistance silicon carbide coating on the Mo / Ta electrode. Compared with the prior art, on the premise that conductivity is not sacrificed, atomic oxygen / oxygen ion resistance, sputtering resistance, thermal cycling stability and the like of the Mo / Ta electrode can be remarkably improved.

The invention relates to the technical field of screen printing plates, in particular to a printing screen printing plate, a manufacturing method and a solar cell. The screen printing plate comprises a screen printing plate layer, the screen printing plate layer is provided with a printing groove extending in the first direction, the printing groove penetrates through the screen printing plate layer in the thickness direction of the screen printing plate layer, the printing groove comprises a plurality of first groove sections and second groove sections which are alternately connected in the first direction, and the maximum width of the first groove sections in the second direction is larger than that of the second groove sections in the second direction; the minimum width of the first groove section in the second direction is larger than or equal to the maximum width of the second groove section in the second direction, and every two of the first direction, the second direction and the thickness direction of the screen printing plate layer are perpendicular to each other; the groove depth size of the first groove section in the thickness direction of the screen printing plate layer is smaller than the groove depth size of the second groove section in the thickness direction of the screen printing plate layer. The grid line printed by the printing screen not only integrates the welding performance of the assembly and the low resistance performance of the grid line, but also can reduce the cost.

The invention discloses a preparation method of conductive ceramic as well as an obtained product and application of the conductive ceramic. The conductive ceramic is prepared by taking aluminum oxide powder, coal gangue powder, fly ash powder and an organic carbon source as matrix raw materials and polyvinyl alcohol as a binding agent and adopting a rapid hot-pressing high-temperature sintering carbon thermal reduction process. The method is simple in process, low in cost, low in energy consumption, high in production efficiency, good in environmental protection property and easy for industrial production. The obtained conductive ceramic is high in mechanical property, good in conductivity and low in resistance, and is a preferable material for the fields of indoor heaters, electromagnetic shielding devices, high-temperature sensors, aerospace thermal protection systems and aero-engines.

Provided is a transparent conductive film that makes it possible to achieve a low resistance value by maintaining low resistivity even when the film thickness of a transparent electrode layer comprising a conductive oxide is increased.　The present invention pertains to a transparent conductive film 1 in which a transparent electrode layer 40 containing indium oxide as a main component is formed on a substrate 30, wherein the transparent electrode layer 40 has a film thickness of 80 nm or more, and the peak intensity ratio I30.2 / I30.4 of the peak intensity I30.2 of 2θ = 30.2° and the peak intensity I30.4 of 2θ = 30.4° in an X-ray diffraction result in which the background is not removed from the X-ray diffraction pattern is 0.8 or less.

The invention relates to the technical field of resistance paste, and provides resistance paste and a preparation method thereof. Wherein the resistance paste comprises 75-105 parts of a conductive filler, 0.5-5 parts of a high-temperature heat-resistant agent, 5-15 parts of glass powder and 15-33 parts of an organic carrier; the conductive filler contains nano silver powder. According to the resistance paste provided by the invention, the added conductive filler serves as a core component of the resistance paste and is used for forming a continuous and compact conductive network, and the contained nano silver powder can remarkably reduce the sintering temperature of the resistance paste, promote the sintering compactness and enhance the adhesive force, so that the stability and reliability of a resistor are improved; the high-temperature heat-resistant agent has an extremely high heat-resistant temperature, so that the heat stability, the service life and the reliability of the resistor can be remarkably improved; the glass powder can improve the compatibility of the slurry and a base material, effectively prevents cracking and layering caused by sintering, and can form a more compact protection layer, thereby inhibiting silver oxidation and improving the corrosion resistance of the resistor.

The invention provides an SOT-MTJ device, and the device comprises two bottom metal layers which are formed on a substrate; the two bottom through holes are opposite to the two bottom metal layers one by one; the SOT track layer is positioned on the two bottom through holes and is in contact with the two bottom through holes; an MTJ film stack on the SOT track layer; wherein the bottom through hole comprises two conducting layers, the first conducting layer located on the lower layer is made of a low-resistivity conducting material, and the second conducting layer located on the upper layer and in direct contact with the SOT track layer is made of a high-resistivity conducting material. According to the invention, the overturning efficiency of the SOT-MTJ device can be improved.

Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.

A method of manufacturing a semiconductor device includes forming a first metal material liner in a trench at a first temperature. The trench is located in the semiconductor substrate. The method further includes forming a second metal material liner to the first metal material at a second temperature. The second temperature is higher than the first temperature. The method further includes performing an annealing process on the first metal material and the second metal material. A semiconductor element having a lower resistivity can be more effectively formed.

The present disclosure relates to a surface acoustic wave (SAW) device with robust metal structures, which at least provide electrically low resistance and mechanically strong connections between different inter digital transducers (IDTs) within the SAW device. Each metal structure includes a metal base section that is formed from a same metal layer as corresponding IDTs, and a metal stack over the metal base section. The metal stack includes a bottom adhesive layer over the metal base section, a bottom conductive layer over the bottom adhesive layer, an intermediate adhesive layer over the bottom conductive layer, a top conductive layer over the intermediate adhesive layer, and a top adhesive layer over the top conductive layer. The bottom and top conductive layers have a higher electrical conductivity than each adhesive layer, while each adhesive layer has a stronger adhesion strength than the bottom and top conductive layers.

Methods of forming DRAM bit lines to improve line edge roughness (LER) and reduce resistance are described. The methods include the steps of implanting an inert species into a bit line metal layer having a first grain size on a substrate to form an amorphized bit line metal layer having a second grain size, the second grain size being smaller than the first grain size. A film stack is then deposited on the amorphized bit line metal layer. The film stack and the amorphized bit line metal layer are etched to form a patterned film stack on the substrate. The patterned film stack on the substrate is thermally annealed.

The present application discloses a ReRAM device, the bottom surface of a first resistance switching layer is connected with a bottom electrode, and a first groove is formed in the center of the top surface of the first resistance switching layer. A second resistance switching layer is formed on the first resistance switching layer, the center of the bottom surface of the second resistance switching layer is filled downwards into the first groove, and the top surface of the second resistance switching layer is connected with a top electrode. The material of the second resistance switching layer is more conductive than the material of the first resistance switching layer. The present application can maintain the stability of the central conductive filament in the low resistance state. The present application further discloses a method for manufacturing the ReRAM device.

The invention provides a nickel-based precise high-resistance alloy wire, and relates to the technical field of resistance alloys, and the alloy wire comprises the following chemical components in percentage by mass: 18%-22% of chromium, 1.5%-2.5% of aluminum, 1.0%-2.0% of iron, 1.2%-2.2% of copper, 0.5%-1.2% of manganese, 0.3%-0.8% of titanium, 0.05%-0.15% of zirconium, 0.01%-0.08% of cerium and the balance of nickel. The resistivity of the alloy wire at the temperature of 20 DEG C is larger than or equal to 1.35 mu omega.m, the average resistance temperature coefficient of the alloy wire at the temperature of 20-155 DEG C is-12 ppm / DEG C-15 ppm / DEG C, the Vickers hardness of the alloy wire is 180-240, and the oxidation weight increment at the temperature of 800 DEG C per 100 h is smaller than or equal to 0.90 mg / cm. By improving the composition proportion and the preparation method of the alloy wire, perfect balance of high resistivity, low resistance temperature coefficient, excellent heat resistance and processability can be realized.

The invention relates to the technical field of power system grounding device maintenance, and provides a graphene / aluminum oxide-zinc composite material and a connecting structure of the graphene / aluminum oxide-zinc composite material and a round steel matrix, the graphene / aluminum oxide-zinc composite material comprises 87-92 parts by mass of graphene, 5-8 parts by mass of nanometer aluminum oxide and 3-5 parts by mass of zinc powder. According to the graphene / aluminum oxide-zinc composite grounding material, a continuous conductive network is formed through graphene, so that the resistivity is remarkably reduced; the nanometer aluminum oxide inhibits graphene stacking and promotes Al-O-C interface bonding, interlayer bonding strength is improved, and coating stripping is effectively inhibited; the zinc powder is melted and densified in the sintering process, the zinc powder is corroded in acid soil preferentially in the operation process of the grounding material, Zn is released to inhibit microorganisms, and the obtained composite grounding material has excellent electrical conductivity, high strength and long-acting corrosion resistance.

The present invention provides a current collector and its applications. In a steady state, the present invention provides a current collector that exhibits excellent electrical characteristics, including low resistance, and does not affect the performance and operation of a secondary battery, and in an abnormal state, can form an electrode that ensures stability by interrupting the current flow of the electrode assembly through an increase in resistance, and the present invention can provide a current collector and its applications. [Solution] A current collector comprising a current collector body and a polymer layer formed on one or both sides of the current collector body, wherein the polymer layer comprises a conductive copolymer and the adhesive strength of the polymer layer to the current collector body is 20 gf / 20 mm or more.

This application discloses a crossflow cooling tower packing material with a bonded diamond-shaped grid, comprising several bonded packing plates. The packing plates are vertically arranged, with one side serving as a heat exchange zone. The heat exchange zone has several rows of evenly spaced large diamond-shaped convex ridges, with adjacent rows staggered to form a diamond-shaped grid surface structure. Adjacent edges of two adjacent large diamond-shaped convex ridges in different rows are parallel and form heat exchange channels. The heat exchange zone surface inside each large diamond-shaped convex ridge also has raised structures to increase the heat exchange area. Notches are provided at the top of the four edges of each large diamond-shaped convex ridge. The packing plates have positioning structures for rapid positioning between adjacent packing plates. This packing structure is well-suited for air-water heat exchange, with low resistance during fluid flow.

The application provides high-curie-temperature low-resistance lead-free thermosensitive ceramic and a preparation method thereof, and belongs to the technical field of electronic ceramic elements. 1‑x‑y La x (Bi 0.5 Na 0.5 ) y )(Ti 0.9996 Mn 0.0004 )O3; wherein the value range of x is 0.001<=x<=0.004, and the value range of y is 0.001<=y<=0.0075. The preparation method comprises the following steps: mixing (Bi 0.5 Na 0.5 )TiO3 powder synthesized by two-stage heating hydrothermal method, (Ba 1‑x La x )TiO3 powder synthesized by solid-phase reaction method, Mn(NO3)2 aqueous solution and sintering auxiliary agent AST powder, then performing granulation, molding, glue removal and sintering. The barium titanate-based thermosensitive ceramic prepared by the method has extremely low room temperature resistivity and relatively high curie temperature.

The application discloses a kind of low resistance low inductance high reliable electrode connecting structure for high voltage Pockels cell, belongs to Pockels cell electrode connecting technical field, solve the existing Pockels cell electrode connecting structure connection reliability problem, electric contact medium performance is not good;Including anti-drop insulating sleeve, pin, input electrode, metal hair button, shell and crystal;The top of pin is equipped with anti-drop insulating sleeve, the bottom of pin is connected with input electrode, input electrode is installed in the mounting hole of shell, the inside of shell is provided with crystal, and the outer side surface of both ends of crystal is provided with gold plating layer;Metal hair button at the bottom of input electrode is pressed on gold plating layer.In the application, pin and input electrode are inserted into position and wrapped by anti-drop insulating sleeve, input electrode is not exposed, and the personal safety hazard of high-voltage electric shock is fundamentally eliminated;Metal hair button is used instead of conductive rubber, to ensure that the contact pressure with crystal electrode is constant, and the anti-vibration and anti-impact performance is strong.