253results about How to "Lower resistance" patented technology

The invention relates to a back contact cell, a preparation method of the back contact cell and a photovoltaic module. The substrate has a first surface including first regions and second regions arranged alternately. The tunneling layer is arranged in the first region, and the first doped semiconductor layer is arranged on the side, away from the substrate, of the tunneling layer. The doped field region is located in the first region, and the doped field region and the first doped semiconductor layer are both provided with first doped elements. The second region is provided with a groove which is recessed relative to the first region, one part of the amorphous layer is arranged on the second region, and the other part of the amorphous layer is arranged on the side, away from the substrate, of the first doped semiconductor layer. The second doped semiconductor layer is arranged on one side, far away from the substrate, of the amorphous layer and is provided with a second doped element which is different from the first doped element in doping type. The depth of the doped field region is smaller than that of the groove. Therefore, the passivation performance of the first region can be improved, the passivation performance of the second region can also be considered, and the passivation performance of the back contact battery can be improved on the whole.

The invention discloses a nicosulfuron-containing herbicidal composition and application thereof. The herbicidal composition is prepared from the following components: nicosulfuron, amicarbazone, and dimethyltetrachloroisooctyl ester as well as a dispersant, an emulsifier, a wetting agent, a thickening agent, an antifreeze, and a dispersion medium, wherein the dosage form belongs to a dispersed oil suspension agent. Through the combination of the three active ingredients, the herbicidal composition has an obvious synergistic effect, the use amount of pesticides is reduced, the cost and environmental pollution are reduced, the drug resistance of corn field weeds can be delayed by the application of the composition, and the control spectrum is expanded.

The invention discloses a semiconductor structure, a manufacturing method thereof and electronic equipment. The semiconductor structure includes: an active pillar extending in a vertical direction; the word line extends along a first horizontal direction and is coupled with the active column to form a transistor; bit lines extending along a second horizontal direction and coupled to the active pillars, where the second horizontal direction intersects the first horizontal direction; wherein the word line comprises a first conductive pattern and a second conductive pattern, the first conductive pattern is provided with first openings and second openings, the first openings and the second openings are alternately arranged in the first horizontal direction, the active columns are located in the first openings, and the second conductive pattern is located in the second openings. The resistivity of the second conductive pattern is smaller than the resistivity of the first conductive pattern. The semiconductor structure is beneficial to reducing word line resistance and improving device performance.

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention relates to a video generation method and device, equipment, a medium and a product. The method comprises the following steps: acquiring generation demand information; according to the generation demand information, embedded decision information of a target advertisement is determined, and the embedded decision information comprises at least one of embedded carrier information, advertisement quantity information and advertisement display information; and generating a video embedded with the target advertisement according to the generation demand information and the embedded decision information. According to the method, the embedded decision information of the advertisement is determined according to the generation demand information of the video, and the video is jointly generated based on the generation demand information and the embedded decision information in a video generation process. The natural fusion of the advertisement and the video content is realized, the conflict emotion of the user on the advertisement in the generated video is reduced, and the advertisement acceptability is improved.

The invention relates to the technical field of low-resistance conductive materials, and particularly discloses a base particle vortex mediated near-room-temperature ultralow-resistance material which comprises a main body material and a regulating medium, the main body material is a doped transition metal oxide or a carbon-based composite material; the regulation and control medium is a low-atomic-weight doping agent; the doped transition metal oxide is La-doped SrTiO3 or Nb-doped TiO. Compared with a traditional copper conductor, the material has the advantages that the resistance is obviously reduced, the energy loss in the electron transmission process can be greatly reduced, the energy efficiency of electronic equipment and new energy equipment can be obviously improved, the material can adapt to the environment temperature change of most indoor and outdoor engineering application scenes, and the application prospect is wide. The problem that part of low-resistance materials are poor in temperature stability is solved, the reliability of long-term operation of devices is guaranteed, conventional processes and equipment such as magnetron sputtering, spin coating and pyrolysis, tube furnace doping and mechanical bending are adopted in the whole process, the operation process is clear and easy to understand, and large-scale production can be achieved in common material laboratories or small and medium-sized production workshops.

The utility model discloses a special device for continuously preparing a monovalent ion selective ion exchange membrane. The special device comprises a first unwinding mechanism, a water tank, a first electro-deposition tank, a second electro-deposition tank, a spraying device, a second unwinding mechanism, a drying device, a first winding device, a washing tank and a second winding device which are sequentially arranged from left to right, the first unwinding mechanism is used for unwinding a dry anion exchange membrane; the second unwinding mechanism is used for unwinding the PET film; the first electro-deposition tank is an electro-deposition tank containing polyethyleneimine PEI, and the second electro-deposition tank is an electro-deposition tank containing sulfonic acid group polymers. According to the utility model, the continuous industrial production of the monovalent ion selective anion / cation exchange membrane can be realized, and the production cost and the labor intensity of the monovalent ion selective anion / cation exchange membrane are reduced.

The application provides an Ethernet-based linear series monitoring system and related equipment, the linear series monitoring system comprising a host device and a plurality of slave devices, a main power supply tap being led out from a secondary coil of each first coupling transformer, and an output end of a first power supply unit being connected with each main power supply tap; a primary tap being led out from a primary coil of each second coupling transformer, and a secondary tap being led out from a secondary coil of each third coupling transformer, a primary tap of an nth second coupling transformer in the same slave device being connected with a secondary tap of an nth third coupling transformer; and the primary taps of the N second coupling transformers in the same slave device all being connected with an input end of a rectifier unit. After the first power supply unit starts to supply power, parallel power supply is performed through 2N wires, so that the equivalent comprehensive line resistance is reduced, the voltage drop and loss are reduced, and the stability of line power supply is improved.

The utility model relates to a solar cell. The solar cell includes: a substrate; the grid lines are fixedly arranged on the substrate; and a plurality of attachment blocks, the plurality of attachment blocks are fixedly arranged on two sides of the grid line in a staggered manner along the length direction of the grid line, and the plurality of attachment blocks are fixedly arranged on the substrate. The adhesion blocks arranged on the two sides of the grid line of the solar cell in a staggered manner can enhance the fixing strength of the grid line on the substrate, so that the grid line is not easy to fall off from the substrate, the conductivity of the grid line is improved, and the photoelectric conversion efficiency of the solar cell is improved.

The embodiment of the present application provides a diode device, which comprises: a first semiconductor layer of a first doping type; a field termination layer of the first doping type formed on the first semiconductor layer; a field transition layer of the first doping type formed on the field termination layer; a drift region of the first doping type formed on the field transition layer, and a plurality of column regions of a second doping type formed in the drift region and arranged at intervals; a second semiconductor layer of the second doping type formed above the drift region; the doping concentration of the field transition layer is less than the doping concentration of the field termination layer, the drift region and the field transition layer can respectively cause a conductive modulation effect to accumulate minority carriers; when the diode device is turned off, the field transition layer is completely depleted, the electric field is reduced in the field transition layer and reduced to 0 in the field termination layer. The embodiment of the present application solves the technical problem that the traditional SJ-diode device has large turn-off energy loss caused by tail current in the turn-off process.

This invention belongs to the field of membrane separation technology, specifically relating to a method for preparing a polytetrafluoroethylene (PTFE) composite membrane. The preparation method includes: (1) dissolving a spinning aid, a barium source, a titanium source, and a manganese source in a composite solvent, and then electrospinning to obtain precursor fibers; subsequently, blending the precursor fibers with a grain refiner, and heat-treating to obtain doped ferroelectric fiber bundles; (2) further polymerizing organic acids, inorganic acids, conductive fillers, and conductive polymers with monomers and oxidants to finally obtain a conductive polyaniline composite; (3) incorporating Mxene and the conductive polyaniline composite into an aqueous PTFE emulsion, and then further incorporating the doped ferroelectric fiber bundles and stirring to obtain a suspension; the suspension is then coated, post-treated, and kept warm to obtain a PTFE composite membrane. This invention improves the long-term fouling resistance of the PTFE membrane by doping the doped ferroelectric fiber bundles, the conductive polyaniline composite, Mxene, and PTFE.

A motorized surgical instrument is disclosed. The surgical instrument includes a displacement member. A motor is coupled to the displacement member and a control circuit. A position sensor is coupled to the control circuit and a timer circuit to measure elapsed time. The control circuit is configured to determine a position of the displacement member, determine an error between directed and actual velocity and adjust the directed velocity based on the error in comparison to one or more thresholds. The control circuit also is configured to adjust the rate of change of the directed velocity based on the one or more thresholds. The control circuit also is configured to determine a zone in which the displacement member is located and set the directed velocity based on the zone in which the displacement member is located.

This invention provides a method for identifying abamectin resistance genes in the fall armyworm, dsRNA, and their applications, belonging to the field of molecular biology. This invention combines genome resequencing and transcriptome sequencing to identify key abamectin resistance genes in the fall armyworm. Based on the conserved mRNA sequences of the key resistance genes GSTD6 and CTP6A18, dsRNA was designed, and RNAi technology can effectively reduce the fall armyworm's resistance to abamectin. This has significant practical implications for developing effective fall armyworm resistance management strategies to delay the emergence of resistance and for identifying new targets for pest control.

This invention discloses a glass powder for the main grid paste of TOPCon crystalline silicon solar cells and its preparation method. The glass powder is obtained by mixing glass frits A and B obtained after cold rolling at a mass ratio of 1.5 to 2:1, followed by secondary melting and cold rolling. Glass frit A includes PbO, SiO2, B2O3, Li2O, Na2O, etc., and glass frit B includes Bi2O3, SiO2, AgNO3, B2O3, Li2O, Na2O, etc. Distilled water is added to glass frit B during the batching process to fully combine AgNO3 with other oxides, and the mixture is dried to a viscous state before sintering. During the sintering process, laser-enhanced contact optimization technology is used to reduce AgO in the glass to silver microcrystals, thereby improving the electrical performance of the main grid lines. The printed solar cells exhibit reduced damp heat decay, resulting in high module reliability and improved photoelectric conversion efficiency while ensuring high welding tensile strength. The resulting glass powder does not excessively etch the silicon nitride and aluminum oxide passivation layers, and the prepared slurry can be sintered at 650-800℃, which can meet the requirements of the front and back main grid electrodes of TOPCon batteries.

The application relates to the technical field of semiconductor laser packaging, in particular to a high-efficiency semiconductor laser packaging auxiliary device and a packaging method. The packaging auxiliary device comprises a cooler, a secondary heat sink, an integrated L-shaped electrode, a first insulating sheet and a second insulating sheet. The upper surface of the cooler is provided with a first groove for accommodating the secondary heat sink; the upper surface of the secondary heat sink is provided with a second groove, the second groove is provided with a plurality of third grooves which are arranged at intervals and parallel to each other, the bottom surface of the second groove between the adjacent third grooves is provided with a boss, and the two ends of the secondary heat sink are provided with openings which are arranged parallel to the second groove. The integrated L-shaped electrode is arranged on the cooler. The technical scheme of the application can effectively reduce the packaging difficulty of the semiconductor laser, improve the packaging efficiency and reduce the packaging cost.

This application discloses a heating element, an atomizing module, an atomizer, and an electronic atomizing device. It belongs to the field of aerosol generation technology. In the heating element of this application, by setting the heating wire to alternately connect a first part and a second part, and by having different resistance values ​​for the first and second parts, the temperatures of the first and second parts are different when the heating element is energized. Therefore, the part with higher resistance has a relatively higher temperature, and the part with lower resistance has a relatively lower temperature. Thus, the temperature distribution of the heating wire is also an alternating distribution of high and low temperatures, effectively avoiding high temperatures concentrated in the middle of the heating wire, which would cause excessive heat and carbon buildup at that location. Furthermore, the relatively higher temperature part in the first and second parts can directly transfer the high temperature to the adjacent relatively lower temperature part, thereby improving the heat dissipation effect of the heating element.

The application provides a data reading circuit of an MRAM chip, comprising: a to-be-tested storage unit, a first gating transistor connected in series with the to-be-tested storage unit, a reference unit, a second gating transistor connected in series with the reference unit, and a readout amplifier, wherein the reference unit has three optional reference resistance branches, including a working mode branch, a first test mode branch and a second test mode branch, the working mode branch is used for reading data of the to-be-tested storage unit, the first test mode branch is used for screening out fixed failure units and high-resistance state out-of-range failure units with an open-circuit failure type, and the second test mode branch is used for screening out fixed failure units and low-resistance state out-of-range failure units with a short-circuit failure type.

The utility model discloses a lead-free environment-friendly copper alloy bar for a valve, which comprises a lead-free copper alloy bar body, a hollow hole is arranged at the center of the lead-free copper alloy bar body, a plurality of inclined planes are arranged on the surface of the lead-free copper alloy bar body at equal intervals, an anti-corrosion paint layer is arranged on the surface of the lead-free copper alloy bar body, and the anti-corrosion paint layer is arranged on the surface of the lead-free copper alloy bar body. The lead-free copper alloy bar has the advantages that through the arrangement of the hollow holes, the weight of the lead-free copper alloy bar body is reduced, meanwhile, enough strength is kept, meanwhile, resistance and thermal resistance are reduced, and the electric conduction efficiency and the heat conduction efficiency are improved; the copper alloy material is low in cost, low in cost and free of lead and chromium, meets international environmental protection standards, reduces potential hazards to the environment and human bodies, keeps high strength, high toughness and good machinability of a traditional copper alloy, and is suitable for manufacturing various valve parts.

The invention provides a silane deposition silicon-carbon composite material as well as a preparation method and application thereof, and belongs to the technical field of lithium battery materials. The preparation method comprises the following steps: performing in-situ reaction on zinc salt, dimethylimidazole and a pore-forming agent to obtain a first precursor; and after carbonization treatment, alkali activation is carried out, and then vapor deposition is adopted to obtain the silane deposition silicon-carbon composite material. The prepared silane deposition silicon-carbon composite material has good stability and mechanical strength, hierarchical pore structure distribution and high-capacity ultra-long circulation. The method can solve the problems that existing vapor deposition silicon-carbon is poor in structural stability, and pores of a carbon matrix obtained through traditional ZIF-8 carbonization are prone to collapse.

The present specification discloses an electrode assembly and a secondary battery. The electrode assembly can exhibit low resistance and excellent electrical characteristics in a normal state, and ensure stability by rapidly transitioning to an insulator in an abnormal state. The present specification also discloses a secondary battery including the electrode assembly.

The invention discloses a display panel, a preparation method of the display panel and a display device, the display panel is provided with a first area and a second area, the display panel comprises a substrate, and one side of the substrate is provided with a first potential part located in the second area; the isolation structure is arranged on one side, deviating from the substrate, of the first potential part and extends from the first region to the second region; the conductive structure is partially arranged on the side, away from the substrate, of the isolation structure, the conductive structure is connected with the first potential part, and at least part of the conductive structure located in the second area is thicker than the conductive structure located in the first area.

The utility model discloses an oxygen determination probe which comprises a paper tube and a support, an anode compensation lead and a cathode compensation lead are embedded on the support in a penetrating mode, a quartz tube is installed on the support, an anode thermo wire and a cathode thermo wire are arranged in the quartz tube in a penetrating mode, the anode thermo wire is connected with the cathode thermo wire, the anode thermo wire is connected with the anode compensation lead, and the cathode thermo wire is connected with the cathode compensation lead. An oxygen battery molybdenum needle is connected to the support and connected with the negative electrode compensation wire to serve as an oxygen battery negative electrode, a metal piece is connected to the support and serves as an oxygen battery positive electrode, and a refractory material is solidified on the support. The quartz tube, the oxygen battery molybdenum needle and the metal piece are fixed on the support by the refractory material, the paper tube is arranged in the support, and the top end of the paper tube is sealed by the sealing plate. According to the structure, the production cost can be reduced, the resistance in the measurement process is reduced, and the measurement accuracy is improved.

The utility model discloses an electro -optical modulator is applied to the field of semiconductor technology, include: substrate, substrate surface is provided with photodiode, photodiode includes the epitaxial layer, P type doped area and N type doped area that connect gradually, the lattice constant of epitaxial layer is greater than the lattice constant of P type doped area, the utility model discloses the epitaxial layer of lattice constant greater than P type doped area is arranged to one end of P type doped area, because of the difference of lattice constant between epitaxial layer and P type doped area, will produce compression stress, can improve hole mobility in P type doped area, reduce resistance, and can increase electro -optical modulator bandwidth.

This invention discloses the application of the OsCAD3 protein and its encoding gene in regulating resistance to bacterial blight in rice, relating to the field of plant genetic engineering. The amino acid sequence of this gene protein is shown in SEQ ID NO.3. Cloning the gene editing site sequence, constructing a gene editing recombinant vector, and transforming it into rice can improve rice resistance to bacterial blight and ensure stable rice yield. The OsCAD3 gene editing vector constructed in this invention and the new OsCAD3 allele formed through genome editing can be applied to rice breeding for resistance to bacterial blight. Constructing an overexpression recombinant vector of the above gene coding region sequence and transforming it into rice can reduce rice resistance to bacterial blight and ensure stable rice yield. The above gene overexpression vector can be used in rice breeding to regulate bacterial blight. This invention can be used in the fields of rice germplasm resource improvement and genetic breeding, and is of great significance for breeding new rice varieties resistant to bacterial blight.

The utility model relates to the technical field of electronic wires, in particular to an anti-corrosion electronic wire which comprises a battery core conductor, a spiral groove is arranged on the outer side surface of the battery core conductor, conductive gel containing benzotriazole is filled in the spiral groove, a conductive layer is sleeved on the outer side of the battery core conductor, a chemical passivation layer is arranged on the outer side of the conductive layer, and an anti-corrosion layer is arranged on the outer side of the chemical passivation layer. The outer side of the chemical passivation layer is sleeved with a physical blocking layer, the outer side of the physical blocking layer is provided with a fireproof mica layer, the outer side of the fireproof mica layer is sleeved with a shielding layer, the outer side of the shielding layer is sleeved with an armor layer, and the outer side of the armor layer is sleeved with an anti-corrosion sheath. Through the synergistic effect of the chemical passivation layer and the four-layer composite anti-corrosion sheath (the W61-3 organic silicon coating, the graphene epoxy coating, the nano modified layer and the PTFE glass fiber composite layer), a chemical and physical dual protection system is formed, the cable can resist complex corrosion environments such as acid, alkali, salt and humid and hot atmosphere, and the protection life is prolonged by more than three times.

The invention discloses a preparation method of a carrier plate structure, the carrier plate structure and a semiconductor packaging structure. The preparation method of the support plate structure comprises the following steps: providing a support plate, wherein the support plate is provided with a first surface and a second surface opposite to each other in a first direction; modifying the support plate at a part of positions by using a laser induction process from one side of the support plate in the first direction, so that the support plate is provided with a modified area and a non-modified area, and the sizes of the modified area and the non-modified area in the first direction are equal to the size of the support plate in the first direction; performing etching treatment on the first surface in the modification area to form a first hole section which does not penetrate through the carrier plate; preparing a first conductive structure in the first hole section; performing etching treatment on the second surface in the modification area to form a second hole section communicated with the first hole section; and at least preparing a second conductive structure electrically connected with the first conductive structure into the second hole section.

The present disclosure provides a high-temperature graphene electric heating plate capable of being used for traditional Chinese medicine moxibustion and a manufacturing method thereof. The high-temperature graphene electric heating plate utilizes the infrared rays generated by graphene at high temperature to cover the spectrum of moxa heat, adopts a high-temperature-resistant rigid substrate and a high-temperature-resistant protective layer to protect the high-temperature graphene electric heating film, and transfers graphene through an adhesive layer containing a dopant during preparation, thereby improving the transfer quality, high-temperature stability and yield of the graphene, and achieving the material requirements of traditional Chinese medicine moxibustion.

The utility model relates to a battery cover, battery compartment, power supply module and thermal imaging equipment, including conductive cover body, the conductive cover body has first conductive portion, the first conductive portion is used for abutting against the battery end portion, the battery cover also includes first conductive elastic member, one end of the first conductive elastic member abuts against the conductive cover body, and the other end of the first conductive elastic member abuts against the battery compartment. And the other end of the first conductive elastic piece is used for abutting against the end part of the battery.

The utility model relates to connector technical field, and disclose a weak current cable connector, including weak current connection mechanism, weak current connection mechanism includes two connector main bodies that are centrally symmetric, one side connector main body another end is provided with male contact connector, the other side connector main body one end is provided with female contact connector, and female contact connector one end sliding contact male contact connector, and the female contact connector and male contact connector outside rotation install rotating outer cover mechanism. The utility model discloses a weak current cable connector, which is made of oxygen-free copper as a conductor material to make the connector contact head and internal connecting wire, reduce resistance, and the connector main body shell and rotating sleeve are made of metal, the shielding measures of the connector are strengthened, the influence of external electromagnetic interference on the signal is reduced, in addition, the connecting main body outside is provided with radiating fins and radiating holes, the contact area of the connector outside and air is increased, and the heat dissipation capacity of the overall connector structure is enhanced.

Provided is a developing roller for an electrophotographic device, the surface layer of which has low resistance and excellent wear resistance, and which also has excellent uniformity and an excellent image over a long period of time. A developing roller (10) for an electrophotographic device is provided with a shaft body (12), an elastomer layer (14) formed on the outer peripheral surface of the shaft body (12), and a surface layer (16) formed on the outer peripheral surface of the elastomer layer (14), the elastomer layer (14) being configured from a silicon base material containing silicone rubber, the surface layer (16) being configured from a crosslinked product containing a urethane prepolymer and a composition (C)-(E) described below, the urethane prepolymer comprises (A) an aromatic isocyanate, (B) a caprolactone-based polyol or a carbonate-based polyol, (C) carbon black, (D) a (meth) acrylic polymer containing a hydrophilic group and a silicone group in each molecule, and (E) isocyanurate, and the fracture stress of the surface layer (16) is 30 MPa or more, and the urethane prepolymer is formed from (A) an aromatic isocyanate, (B) a caprolactone-based polyol or a carbonate-based polyol, (C) carbon black, (D) a (meth) acrylic polymer containing a hydrophilic group and a silicone group in each molecule, and (E) an isocyanurate.