2168 results about "Atomic ratio" patented technology

The electrode material for a lithium secondary battery according to the present invention includes particles of a solid state alloy having silicon as a main component, wherein the particles of the solid state alloy have a microcrystal or amorphous material including an element other than silicon, dispersed in microcrystalline silicon or amorphized silicon. The solid state alloy preferably contains a pure metal or a solid solution. The composition of the alloy preferably has an element composition in which the alloy is completely mixed in a melted liquid state, whereby the alloy has a single phase in a melted liquid state without presence of two or more phases. The element composition can be determined by the kind of elements constituting the alloy and an atomic ratio of the elements.

Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.

A solid amorphous electrolyte composition for a thin-film battery. The electrolyte composition includes a lithium phosphorus oxynitride material containing a sulfide ion dopant wherein the atomic ratio of sulfide ion to phosphorus ion (S/P) in the electrolyte ranges greater than 0 up to about 0.2. The composition is represented by the formula: where 2x+3y+2z=5+w, x ranges from about 3.2 to about 3.8, y ranges from about 0.13 to about 0.46, z ranges from greater than zero up to about 0.2, and w ranges from about 2.9 to about 3.3. Thin-film batteries containing the sulfide doped lithium oxynitride electrolyte are capable of delivering more power and energy than thin-film batteries containing electrolytes without sulfide doping.

A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):

In/(In+Zn)=0.2 to 0.8  (1)

In/(In+Ga)=0.59 to 0.99  (2)

Zn/(Ga+Zn)=0.29 to 0.99  (3).

To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.

In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×10¹⁷/cm³. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.

The present invention relates to a selective hydro-desulfurization catalyst of gasoline and process for using said catalyst. Said invented catayst uses alumina as carrier, uses molybdenum and cobalt as active component, at the same time contains adjuvant potassium and phosphorus, and the optimized atomic ratio of phosphorus and potassium is 1-2. Said invented catalyst has good selectivity and stability, and at the same time has proper activity, and is mainly used for selective hydro-desulfurization of catalytic cracked gasoline.

A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):

In/(In+Zn)=0.2 to 0.8  (1)

In/(In+X)=0.29 to 0.99  (2)

Zn/(X+Zn)=0.29 to 0.99  (3).

Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.

A toner including toner particles including a binder resin, a colorant and a release agent, and an external additive including a first particulate inorganic material having a formula of Mg_xSi_yO_x+2y where each of x and y is an integer, and a number average secondary particle diameter of from 0.02 μm to 2 μm, wherein the first atomic ratio (Mg/Si) s in a surface portion of the first particulate inorganic material is not greater than (preferably less than) the second atomic ratio (Mg/Si)e in the entire first particulate inorganic material. Alternatively, a toner including toner particles including a binder resin and a colorant, and an external additive which includes a particulate inorganic material having a formula of Mg_xSi_yO_x+2y where each of x and y is an integer and which has a surface treated with a fatty acid.

A high temperature naphtha desulfurization process with reduced olefin saturation employs a partially spent and low metals content hydrodesulfurization catalyst having from 2-40% the activity of a new catalyst. The catalytic metals preferably include Co and Mo in an atomic ratio of from 0.1 to 1. The catalyst is preferably at least partially regenerable, has less than 500 wppm of a total of one or more of nickel, iron and vanadium and preferably has no more than 12 wt. % catalytic metal calculated as the oxide. This permits selective deep desulfurization, with reduced olefin saturation, low product mercaptan levels and little or need for downstream mercaptan removal.

A process of polymerizing ethylene or ethylene and one or more comonomers in one or more fluidized bed reactors with a catalyst system comprising (i) a supported or unsupported magnesium/titanium based precursor in slurry form, said precursor containing an electron donor; and (ii) an activator containing aluminum in an amount sufficient to essentially complete the activation of the precursor is disclosed. In the process, the precursor and the activator are mixed prior to introduction into the reactor in at least one mixing procedure, and then the mixture is contacted again with additional activator to essentially complete activation of the precursor. In the method, the atomic ratio of aluminum to titanium is in the range of about 1:1 to about 15:1 and the mole ratio of activator to electron donor is about 1:1 to about 2:1, and no additional activator is introduced into the reactor(s).

An electrode material for a lithium secondary battery which includes particles each having a central portion and a surface portion covering the surface of the central portion. A distance from a center to an outermost surface of the particle is occupied 80 to 99% by the central portion and 1 to 20% by the surface portion. The central portion includes LiM_1-aD_aO₂ having an α-NaFeO₂ structure, and the surface portion includes LiM_1-bE_bO₂ having an α-NaFeO₂ structure. (M is C or Ni; D is a transition metal element or Al replacing a part of Co or Ni as M; E is a metal element replacing a part of Co or Ni as M; and M is not the same as D or E.) The following relationships are satisfied in the central portion, in terms of atomic ratio: D/(M+D+E)<0.05 and E/(M+D+E)<0.05.

A process for the production of propylene from an olefinic feedstock containing at least one olefin of C₄ or greater, the process comprising contacting the olefinic feedstock with a catalyst of the MFI-type having a silicon/aluminum atomic ratio of at least about 180 to produce an effluent containing propylene, the propylene yield on an olefin basis being from 30 to 50k based on the olefinic content of the feedstock.

A non-aqueous secondary battery of the present invention includes a positive electrode, a negative electrode and a non-aqueous electrolyte. The positive electrode includes a positive electrode material mixture layer containing a lithium-containing transition metal oxide. The negative electrode includes a negative electrode material mixture layer and a porous layer containing an insulating material unreactive with lithium formed thereon. The negative electrode material mixture layer includes a negative electrode material including a core and a carbon covering layer covering a surface of the core. The core includes a material containing silicon and oxygen at an atomic ratio x of the oxygen to the silicon of 0.5≦×≦1.5. The material containing silicon and oxygen has a peak at least in a range of 1850 to 1860 eV in an X-ray absorption near edge structure spectrum at the K absorption edge of Si in a state in which discharge of the battery is finished.

A catalyst precursor composition and methods for making such catalyst precursor is disclosed. In one embodiment, the catalyst precursor is of the general formula A_v[(M^P)(OH)_x(L)ⁿ_y]_z(M^VIBO₄), wherein M^P is selected from Group VIII, Group IIB, Group IIA, Group IVA and combinations thereof; L is one or more oxygen-containing ligands, and L has a neutral or negative charge n<=0, M^VIB is at least a Group VIB metal having an oxidation state of +6; M^P:M^VIB has an atomic ratio between 100:1 and 1:100; v−2+P*z−x*z+n*y*z=0; and 0≦y≦−P/n; 0≦x≦P; 0≦v≦2; 0≦z. In one embodiment, the catalyst precursor further comprises a cellulose-containing material. In another embodiment, the catalyst precursor further comprises at least a diluent (binder). In one embodiment, the diluent is a magnesium aluminosilicate clay.

A method for producing nano-carbon materials, having a step wherein a starting material comprising one or more kinds of compounds selected from the group consisting saturated hydrocarbons, unsaturated hydrocarbons, saturated cyclic hydrocarbons, and alcohols whose atomic ratio of the component carbon to the component oxygen is more than 2.0 and a catalyst are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where said starting material is converted into a supercritical fluid or a subcritical fluid while said supercritical fluid or said subcritical fluid being contacted with said catalyst, or a step wherein said starting material, said catalyst and a supplementary material capable of functioning as a reaction promotion medium are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where at least said supplementary material is converted into a supercritical fluid or a subcritical fluid and said starting material is contacted with said supercritical fluid or said subcritical fluid formed from said supplementary material while being contacted with said catalyst.

A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a sulfide species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material.