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2206 results about "Atomic ratio" patented technology
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The atomic ratio is a measure of the ratio of atoms of one kind (i) to another kind (j). A closely related concept is the atomic percent (or at.%), which gives the percentage of one kind of atom relative to the total number of atoms. The molecular equivalents of these concepts are the molar fraction, or molar percent.
Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
ActiveUS8084104B2Reduce resistanceLow densitySemiconductor/solid-state device detailsSynthetic resin layered productsRutheniumAlloy
Owner:ASM JAPAN
Electrode material for lithium secondary battery and electrode structure having the electrode material
InactiveUS20060040182A1Reduce conductivityImprove conductivityLi-accumulatorsNon-aqueous electrolyte accumulator electrodesLithiumLiquid state
The electrode material for a lithium secondary battery according to the present invention includes particles of a solid state alloy having silicon as a main component, wherein the particles of the solid state alloy have a microcrystal or amorphous material including an element other than silicon, dispersed in microcrystalline silicon or amorphized silicon. The solid state alloy preferably contains a pure metal or a solid solution. The composition of the alloy preferably has an element composition in which the alloy is completely mixed in a melted liquid state, whereby the alloy has a single phase in a melted liquid state without presence of two or more phases. The element composition can be determined by the kind of elements constituting the alloy and an atomic ratio of the elements.
Owner:CANON KK
Field effect transistor using oxide semicondutor and method for manufacturing the same
ActiveUS8384077B2Easy to produceLower resistanceSemiconductor/solid-state device manufacturingDiodeIndiumField-effect transistor
A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In / (In+Zn)=0.2 to 0.8 (1)In / (In+Ga)=0.59 to 0.99 (2)Zn / (Ga+Zn)=0.29 to 0.99 (3).
Owner:IDEMITSU KOSAN CO LTD
Methods And Apparatus For Forming Tantalum Silicate Layers On Germanium Or III-V Semiconductor Devices
InactiveUS20140065842A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingSilicon oxideAtomic layer deposition
Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si / (Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.
Owner:APPLIED MATERIALS INC
Hard film for cutting tools, cutting tool coated with hard film, process for forming hard film, and target used to form hard film
InactiveUS6824601B2Improve wear resistanceHigh-speed efficient cuttingMolten spray coatingOther chemical processesMetallurgyAtomic ratio
A hard film for cutting tools which is composed of(where a, b, c, and d denote respectively the atomic ratios Al, Cr, Si, and B, and e denotes the atomic ratio of N.)
Owner:KOBE STEEL LTD
Thin film battery and electrolyte therefor
A solid amorphous electrolyte composition for a thin-film battery. The electrolyte composition includes a lithium phosphorus oxynitride material containing a sulfide ion dopant wherein the atomic ratio of sulfide ion to phosphorus ion (S / P) in the electrolyte ranges greater than 0 up to about 0.2. The composition is represented by the formula: where 2x+3y+2z=5+w, x ranges from about 3.2 to about 3.8, y ranges from about 0.13 to about 0.46, z ranges from greater than zero up to about 0.2, and w ranges from about 2.9 to about 3.3. Thin-film batteries containing the sulfide doped lithium oxynitride electrolyte are capable of delivering more power and energy than thin-film batteries containing electrolytes without sulfide doping.
Owner:OAK RIDGE MICRO ENERGY
Hexagonal barium ferrite magnetic particle and method of manufacturing the same, and magnetic recording medium
InactiveUS20120177951A1Inhibit drop in thermal stabilityEnsure easeMagnetic materials for record carriersInorganic material magnetismBiological activationMaterials science
An aspect of the present invention relates to a hexagonal barium ferrite magnetic particle, wherein, relative to 100 atom percent of a Fe content, an Al content ranges from 1.5 to 15 atom percent, a combined content of a divalent element and a pentavalent element ranges from 1.0 to 10 atom percent, an atomic ratio of a content of the divalent element to a content of the pentavalent element is greater than 2.0 but less than 4.0, and an activation volume ranges from 1,300 to 1,800 nm3.
Owner:FUJIFILM CORP
Field effect transistor using oxide semicondutor and method for manufacturing the same
ActiveUS20100289020A1Easy to produceReduce contact resistanceTransistorSemiconductor/solid-state device manufacturingIndiumField-effect transistor
A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In / (In+Zn)=0.2 to 0.8 (1)In / (In+Ga)=0.59 to 0.99 (2)Zn / (Ga+Zn)=0.29 to 0.99 (3).
Owner:IDEMITSU KOSAN CO LTD
Oxide catalyst composition
InactiveUS7012039B2High selectivityLow selectivityOrganic compound preparationCarboxylic acid esters preparationLanthanideMethacrolein
An oxide catalyst composition for use in producing methacrolein or a mixture of methacrolein and methacrylic acid, wherein the oxide catalyst composition is represented by the formula (Mo+W)l2BiaAbBcFedXeSbfOg, wherein: A is at least one member selected from the group consisting of Y and the elements of the lanthanoid series exclusive of Pm; B is at least one member selected from the group consisting of K, Rb and Cs; X is Co solely, or a mixture of Co and at least one member selected from the group consisting of Mg and Ni; and a, b, c, d, e, f and g are, respectively, the atomic ratios of Bi, A, B, Fe, X, Sb and O, relative to twelve atoms of the total of Mo and W, wherein the atomic ratios (a to f) of the elements and the relationship between the amounts of the elements are chosen so as to satisfy specific requirements.
Owner:ASAHI KASEI CHEM CORP
Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device
InactiveUS20110050733A1Time requiredEasy to implementVacuum evaporation coatingSputtering coatingCrystalline oxideHeat resistance
To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017 / cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X] / ([X]+[In]) is 0.0001 to 0.13.
Owner:IDEMITSU KOSAN CO LTD
Phosphor, method for producing the same and light-emitting device using the same
ActiveUS20100200874A1Improve stabilityIncrease brightnessDischarge tube luminescnet screensElectroluminescent light sourcesPhosphorNitrogen
The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0)aM(1)bM(2)x−(vm+n)M(3)(vm+n)−yOnNz−n, wherein M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd and Lu; M(1) is one or more activators selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb; M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr; M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn; O is oxygen; N is nitrogen; and an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following: x, y and z satisfy 33≦x≦51, 8≦y≦12 and 36≦z≦56; a and b satisfy 3≦a+b≦7 and 0.001≦b≦1.2; m and n satisfy 0.8·me≦m≦1.2·me and 0≦n≦7 in which me=a+b; and v satisfies v={a·v(0)+b·v(1)} / (a+b) (wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion). The invention also relates to a method for producing the phosphor and a light-emitting device using the phosphor.
Owner:NAT INST FOR MATERIALS SCI
Selective hydrogenation catalyst for gasoline and process
InactiveCN1488721AGood choiceHigh selectivityRefining to eliminate hetero atomsActive componentHydrodesulfurization
The present invention relates to a selective hydro-desulfurization catalyst of gasoline and process for using said catalyst. Said invented catayst uses alumina as carrier, uses molybdenum and cobalt as active component, at the same time contains adjuvant potassium and phosphorus, and the optimized atomic ratio of phosphorus and potassium is 1-2. Said invented catalyst has good selectivity and stability, and at the same time has proper activity, and is mainly used for selective hydro-desulfurization of catalytic cracked gasoline.
Owner:CHINA PETROLEUM & CHEM CORP +1
Oxide semiconductor field effect transistor and method for manufacturing the same
ActiveUS20100276688A1Easy to producePoor smoothnessTransistorVacuum evaporation coatingLanthanideField-effect transistor
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):In / (In+Zn)=0.2 to 0.8 (1)In / (In+X)=0.29 to 0.99 (2)Zn / (X+Zn)=0.29 to 0.99 (3).
Owner:IDEMITSU KOSAN CO LTD
Nitrogen-doped porous carbon material for lithium-air battery positive electrode
ActiveCN103855366AHigh discharge specific capacityHigh voltage platformFuel and secondary cellsCell electrodesPorous carbonCharge discharge
The present invention relates to a nitrogen-doped porous carbon material for a lithium-air battery positive electrode, wherein the nitrogen-doped porous carbon material has an interconnected graded pore structure, N is uniformly doped in the C skeleton, N accounts for 0.2-15% of the carbon material atomic ratio, the graded pores comprise mass transfer pores and deposition holes, the deposition holes account for 40-95% of the total pore volume, and the mass transfer pores account for 4-55% of the total pore volume. According to the present invention, with application of the carbon material as the lithium-air battery electrode material, the space utilization rate of the carbon material during the charge-discharge process can be increased at a maximum, and the energy density and the power density of the lithium-air battery can be effectively increased; and the preparation process is simple, the material source is wide, the pore structure of the graded pore carbon material can be regulated, the regulation manner is diverse, and the nitrogen doping manner is easily achieved.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
InactiveUS20090004850A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingSalicideSilylene
Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon / cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.
Owner:APPLIED MATERIALS INC
Oxide semiconductor field effect transistor and method for manufacturing the same
ActiveUS8461583B2Easy to produceTransistorVacuum evaporation coatingLanthanideField-effect transistor
Owner:IDEMITSU KOSAN CO LTD
Active material for non-aqueous electrolyte secondary battery and manufacturing method therefore
ActiveUS20080268347A1Increase capacityReduces electron conductivity and lithium diffusing abilityElectrode manufacturing processesNon-aqueous electrolyte accumulatorsDesorptionX-ray
An active material for a non-aqueous electrolyte secondary battery including a lithium-containing transition metal oxide containing nickel and manganese and having a closest-packed structure of oxygen, wherein an atomic ratio MLi / MT between the number of moles of lithium MLi and the number of moles of transition metal Mt contained in the lithium-containing transition metal oxide is greater than 1.0; the lithium-containing transition metal oxide has a crystal structure attributed to a hexagonal system, and the X-ray diffraction image of the crystal structure has a peak P003 attributed to the (003) plane and a peak P104 attributed to the (104) plane; an integrated intensity ratio I003 / I104 between the peak P003 and the peak P104 varies reversibly within a range from 0.7 to 1.5 in association with absorption and desorption of lithium by the lithium-containing transition metal oxide; and the integrated intensity ratio varies linearly and continuously.
Owner:PUBLIC UNIVERSITY CORPORATION OSAKA CITY UNIVERSITY +1
Toner, and image forming method and apparatus and process cartridge using the toner
A toner including toner particles including a binder resin, a colorant and a release agent, and an external additive including a first particulate inorganic material having a formula of MgxSiyOx+2y where each of x and y is an integer, and a number average secondary particle diameter of from 0.02 μm to 2 μm, wherein the first atomic ratio (Mg / Si) s in a surface portion of the first particulate inorganic material is not greater than (preferably less than) the second atomic ratio (Mg / Si)e in the entire first particulate inorganic material. Alternatively, a toner including toner particles including a binder resin and a colorant, and an external additive which includes a particulate inorganic material having a formula of MgxSiyOx+2y where each of x and y is an integer and which has a surface treated with a fatty acid.
Owner:RICOH KK
High temperature naphtha desulfurization using a low metal and partially deactivated catalyst
InactiveUS6231754B1Catalyst regeneration/reactivationMetal/metal-oxides/metal-hydroxide catalystsNaphthaThiol
A high temperature naphtha desulfurization process with reduced olefin saturation employs a partially spent and low metals content hydrodesulfurization catalyst having from 2-40% the activity of a new catalyst. The catalytic metals preferably include Co and Mo in an atomic ratio of from 0.1 to 1. The catalyst is preferably at least partially regenerable, has less than 500 wppm of a total of one or more of nickel, iron and vanadium and preferably has no more than 12 wt. % catalytic metal calculated as the oxide. This permits selective deep desulfurization, with reduced olefin saturation, low product mercaptan levels and little or need for downstream mercaptan removal.
Owner:EXXON RES & ENG CO
Steel sheet for hot press forming having low-temperature heat treatment property, method of manufacturing the same, method of manufacturing parts using the same, and parts manufactured by the same
ActiveUS20090238715A1Reduced strengthHigh yield strengthMetal rolling stand detailsFurnace typesManganeseHeat treated
A steel sheet for forming having low-temperature heat treatment property, in which heat treatment is performed within a range of lower temperature than a conventional steel sheet in the event of hot press forming or post-heat treatment after cold forming, a method of manufacturing the same, and a method of manufacturing parts using the same. The steel sheet has a composition of, by weight, carbon (C): 0.15 to 0.35%, silicon (Si): 0.5% or less, manganese (Mn): 1.5 to 2.2%, phosphorus (P): 0.025% or less, sulfur (S): 0.01% or less, aluminum (Al): 0.01 to 0.05%, nitrogen (N): 50 to 200 ppm, titanium (Ti): 0.005 to 0.05%, tungsten (W): 0.005 to 0.1%, and boron (B): 1 to 50 ppm, wherein Ti / N: less than 3.4, where Ti / N is the atomic ratio of the corresponding elements, Ceq expressed by the following formula ranges from 0.48 to 0.58, and temperature Ar3 ranges from 670° C. to 725° C. Wherein Ceq=C+Si / 24+Mn / 6+Ni / 40+Cr / 5+V / 14 where C, Si, Mn, Ni, Cr and V indicate the contents (wt %) of the respective elements.
Owner:POHANG IRON & STEEL CO LTD
Process for the preparation of polyethylene
InactiveUS6617405B1Avoid experimentationDisperse thoroughlyOrganic-compounds/hydrides/coordination-complexes catalystsCatalyst activation/preparationElectron donorSlurry
A process of polymerizing ethylene or ethylene and one or more comonomers in one or more fluidized bed reactors with a catalyst system comprising (i) a supported or unsupported magnesium / titanium based precursor in slurry form, said precursor containing an electron donor; and (ii) an activator containing aluminum in an amount sufficient to essentially complete the activation of the precursor is disclosed. In the process, the precursor and the activator are mixed prior to introduction into the reactor in at least one mixing procedure, and then the mixture is contacted again with additional activator to essentially complete activation of the precursor. In the method, the atomic ratio of aluminum to titanium is in the range of about 1:1 to about 15:1 and the mole ratio of activator to electron donor is about 1:1 to about 2:1, and no additional activator is introduced into the reactor(s).
Owner:UNION CARBIDE CHEM & PLASTICS TECH CORP
Electrode material for lithium secondary battery, electrode structure and lithium secondary battery
InactiveUS20080131782A1Suppressed capacity degradationImprove featuresCobalt compoundsNon-aqueous electrolyte accumulator electrodesLithiumEngineering
An electrode material for a lithium secondary battery which includes particles each having a central portion and a surface portion covering the surface of the central portion. A distance from a center to an outermost surface of the particle is occupied 80 to 99% by the central portion and 1 to 20% by the surface portion. The central portion includes LiM1-aDaO2 having an α-NaFeO2 structure, and the surface portion includes LiM1-bEbO2 having an α-NaFeO2 structure. (M is C or Ni; D is a transition metal element or Al replacing a part of Co or Ni as M; E is a metal element replacing a part of Co or Ni as M; and M is not the same as D or E.) The following relationships are satisfied in the central portion, in terms of atomic ratio: D / (M+D+E)<0.05 and E / (M+D+E)<0.05.
Owner:CANON KK
Production of propylene
InactiveUS6977321B1Improve propylene yieldHigh purityCatalytic crackingMolecular sieve catalystsAlkeneSilicon
A process for the production of propylene from an olefinic feedstock containing at least one olefin of C4 or greater, the process comprising contacting the olefinic feedstock with a catalyst of the MFI-type having a silicon / aluminum atomic ratio of at least about 180 to produce an effluent containing propylene, the propylene yield on an olefin basis being from 30 to 50k based on the olefinic content of the feedstock.
Owner:FINA RES SA
Non-aqueous secondary battery and method for producing the same
ActiveUS20070190416A1Large capacityExcellent battery characteristicsFinal product manufacturePrimary cellsPeak valueOxygen
A non-aqueous secondary battery of the present invention includes a positive electrode, a negative electrode and a non-aqueous electrolyte. The positive electrode includes a positive electrode material mixture layer containing a lithium-containing transition metal oxide. The negative electrode includes a negative electrode material mixture layer and a porous layer containing an insulating material unreactive with lithium formed thereon. The negative electrode material mixture layer includes a negative electrode material including a core and a carbon covering layer covering a surface of the core. The core includes a material containing silicon and oxygen at an atomic ratio x of the oxygen to the silicon of 0.5≦×≦1.5. The material containing silicon and oxygen has a peak at least in a range of 1850 to 1860 eV in an X-ray absorption near edge structure spectrum at the K absorption edge of Si in a state in which discharge of the battery is finished.
Owner:MAXELL HLDG LTD
Method and structure for adhesion of absorber material for thin film photovoltaic cell
InactiveUS7960204B2Toxic reductionImprove bindingSemiconductor/solid-state device manufacturingPhotovoltaic energy generationIndiumSulfur
Owner:CM MFG
Thin film transistor manufacturing method, thin film transistor, thin film transistor substrate and image display apparatus, image display apparatus and semiconductor device
InactiveUS8642402B2Easy to produceVacuum evaporation coatingSputtering coatingCrystalline oxideHeat resistance
To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×1017 / cm3. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X] / ([X]+[In]) is 0.0001 to 0.13.
Owner:IDEMITSU KOSAN CO LTD
Hydroconversion Processes Employing Multi-Metallic Catalysts and Method for Making Thereof
ActiveUS20090107883A1Organic-compounds/hydrides/coordination-complexes catalystsHeterogenous catalyst chemical elementsCelluloseDiluent
A catalyst precursor composition and methods for making such catalyst precursor is disclosed. In one embodiment, the catalyst precursor is of the general formula Av[(MP)(OH)x(L)ny]z(MVIBO4), wherein MP is selected from Group VIII, Group IIB, Group IIA, Group IVA and combinations thereof; L is one or more oxygen-containing ligands, and L has a neutral or negative charge n<=0, MVIB is at least a Group VIB metal having an oxidation state of +6; MP:MVIB has an atomic ratio between 100:1 and 1:100; v−2+P*z−x*z+n*y*z=0; and 0≦y≦−P / n; 0≦x≦P; 0≦v≦2; 0≦z. In one embodiment, the catalyst precursor further comprises a cellulose-containing material. In another embodiment, the catalyst precursor further comprises at least a diluent (binder). In one embodiment, the diluent is a magnesium aluminosilicate clay.
Owner:CHEVROU USA INC
Hard film and hard film-coated tool
ActiveUS7166155B2Improve adhesionHigh hardnessVacuum evaporation coatingSputtering coatingCrystal structureX-ray
A hard film formed by an arc-discharge ion-plating method, having a composition comprising metal components represented by AlxCr1-x-ySiy, wherein x and y are respectively atomic ratios meeting 0.45≦x≦0.75, 0≦y≦0.35, and 0.5≦x+y<1, and non-metal components represented by N1-α-β-γBαCβOγ, wherein α,β and γ are respectively atomic ratios meeting 0≦α≦0.15, 0≦β≦0.35, and 0.003≦γ≦0.25, the hard film having an NaCl-type crystal structure, with a half width of 2θ at an X-ray diffraction peak corresponding to a (111) face or a (200) face being 0.5–2.0°, and the hard film containing oxygen more in grain boundaries than in crystal grains.
Owner:HITACHI TOOL ENG LTD
Method for producing nano-carbon materials
InactiveUS20050079119A1Efficiently and quantitatively produceLow production costMaterial nanotechnologyNanostructure manufacturePtru catalystUnsaturated hydrocarbon
A method for producing nano-carbon materials, having a step wherein a starting material comprising one or more kinds of compounds selected from the group consisting saturated hydrocarbons, unsaturated hydrocarbons, saturated cyclic hydrocarbons, and alcohols whose atomic ratio of the component carbon to the component oxygen is more than 2.0 and a catalyst are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where said starting material is converted into a supercritical fluid or a subcritical fluid while said supercritical fluid or said subcritical fluid being contacted with said catalyst, or a step wherein said starting material, said catalyst and a supplementary material capable of functioning as a reaction promotion medium are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where at least said supplementary material is converted into a supercritical fluid or a subcritical fluid and said starting material is contacted with said supercritical fluid or said subcritical fluid formed from said supplementary material while being contacted with said catalyst.
Owner:CANON KK
Sulfide species treatment of thin film photovoltaic cell and manufacturing method
ActiveUS8003430B1Toxic reductionAchieve benefitsSemiconductor/solid-state device manufacturingPhotovoltaic energy generationIndiumSulfur
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a sulfide species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material.
Owner:CM MFG
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