106 results about "Microcrystalline silicon" patented technology

The invention discloses a combined passivation back contact battery which comprises an N-type silicon wafer, a second intrinsic amorphous silicon layer, a microcrystalline silicon layer, an anti-reflection layer, a second semiconductor opening region, a first semiconductor opening region and a transition region, the anti-reflection layer is a single-layer amorphous silicon carbonitride layer or a laminated structure composed of an amorphous silicon carbide layer and an amorphous silicon carbonitride layer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the transparent conductive film on the surface of the transition area to form an insulation groove. Amorphous silicon carbonitride or amorphous silicon carbide / amorphous silicon carbonitride laminated layers are adopted as the anti-reflection layers, so that reflection loss is reduced, the reliability and durability of the cell are improved, and the conversion efficiency of the cell is improved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell, a preparation method thereof and a cell assembly. A second semiconductor layer comprises an intrinsic silicon layer and a second doped silicon layer; the second doped silicon layer comprises second doped microcrystalline silicon and second doped amorphous silicon located at the overlapping region, and further comprises an amorphous silicon insulating layer, and the amorphous silicon insulating layer is located outside the second doped amorphous silicon and does not cover the second doped microcrystalline silicon; an isolation groove is formed in the part, located in the overlapping area, of the conductive film layer, and a distance is reserved between the isolation groove and the junction of the side face of the first semiconductor layer and the second semiconductor layer. Leakage current generated at the junction of the side face of the first semiconductor layer and the second semiconductor layer can be remarkably reduced, meanwhile, the passivation effect of the second semiconductor layer is guaranteed, the isolation groove does not need to stretch across the junction, the second semiconductor layer cannot be damaged, the parallel resistance of the battery is improved, and the current and efficiency of the battery are improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and the back contact solar cell comprises a substrate; the first doped regions and the second doped regions are alternately arranged on the backlight surface of the substrate; wherein the first doped region comprises a tunneling oxide layer and a first doped layer, the first doped layer is located on the side, away from the substrate, of the tunneling oxide layer, and the first doped layer is a polycrystalline silicon doped layer; the second doped region comprises an intrinsic amorphous silicon layer, a second doped layer and an insulating structure, the second doped layer and the insulating structure are located on the side, away from the substrate, of the intrinsic amorphous silicon layer, the insulating structure is located between the second doped layer and the first doped layer, and the doping type of the second doped layer is opposite to that of the first doped layer; and the second doping layer is an amorphous silicon doping layer or a microcrystalline silicon doping layer. The back contact solar cell provided by the invention is at least beneficial to avoiding electric leakage of the back contact cell.

The invention discloses a boron doping method, a boron doping structure and a back contact battery. The method comprises the following steps: step 1) pre-crystallization treatment; step 2) pre-oxidation; (3) boron diffusion; wherein the pre-crystallization treatment is to treat the amorphous silicon layer in the silicon wafer base material in a gradient variable pressure mode in an inert gas atmosphere. According to the method, before pre-oxidation and boron diffusion, amorphous silicon is converted into microcrystalline silicon in a gradient transformation manner, and gradual crystallization is realized, so that lattice stress is reduced, gradient distribution of grain sizes can be realized, the problem of uneven grain sizes caused by a single crystallization condition and the problem of doping concentration fluctuation caused by an unordered structure of the amorphous silicon are avoided, and the yield of the amorphous silicon is improved. According to the method, the boron atoms can be transferred to a balance position more easily, an ordered structure is formed, the distribution is more uniform, the boron-doped structure with better sheet resistance uniformity is obtained, and the photoelectric conversion efficiency of the back contact battery based on the boron-doped structure is further improved.

The embodiment of the utility model provides a solar cell, a photovoltaic module and a photovoltaic system, the solar cell comprises a first surface and a second surface which are opposite to each other, and a side surface located between the first surface and the second surface, and the side surface is provided with a first area close to the first surface and a second area close to the second surface; a first tunneling oxide layer, a first doped polycrystalline silicon layer and a first antireflection layer are sequentially stacked on the first region; and a first intrinsic amorphous silicon layer, a first doped microcrystalline silicon layer and a second antireflection layer are sequentially laminated on the second region. According to the embodiment of the invention, the edge passivation can be enhanced, the efficiency of the solar cell is improved, the edge winding plating of the tunneling oxide layer and the doped polycrystalline silicon does not need to be removed, the etching process is reduced, and the production cost is reduced.

The application provides a method for preparing a silicon negative electrode material by using SiF4 as a raw material, and belongs to the field of battery negative electrode materials. The method for preparing the silicon negative electrode material by using SiF4 as the raw material can simultaneously obtain microcrystalline silicon and amorphous silicon by using silicon tetrafluoride as a silicon source, controlling the placement position of a substrate, the radio frequency power of an inductive radio frequency coil and the temperature of a reaction zone; and the silicon material capable of meeting the use of a lithium ion battery negative electrode can be further obtained by controlling the proportion of silicon tetrafluoride, hydrogen and argon. The method provided by the application can simultaneously obtain microcrystalline silicon and amorphous silicon, and the lithium ion battery prepared from the microcrystalline silicon and the amorphous silicon has good cycle life and coulomb efficiency, and can be used as a negative electrode material.

The invention provides a manufacturing method of a doped microcrystalline silicon layer, a heterojunction solar cell and a preparation method of the heterojunction solar cell. The manufacturing method of the doped microcrystalline silicon layer comprises the steps that firstly, PECVD equipment is provided, the PECVD equipment comprises a reaction cavity, an upper polar plate and a lower polar plate, the upper polar plate and the lower polar plate are located in the reaction cavity and are oppositely arranged in parallel, and the upper polar plate is connected with a radio frequency power source; placing a silicon wafer on the lower polar plate and between the upper polar plate and the lower polar plate; the substrate distance between the upper pole plate and the lower pole plate is set as a first distance, a microcrystalline silicon seed layer is deposited through a doping deposition process, and the first distance ranges from 26 mm to 50 mm; and finally, the distance between the substrates is adjusted to be a second distance, the doping deposition process is carried out, a microcrystalline silicon main layer is deposited on the microcrystalline silicon seed layer, and the range of the second distance is 10-24 mm. According to the invention, the quality of the doped microcrystalline silicon layer can be improved, the stability of the heterojunction solar cell is improved, and the dark attenuation of the heterojunction solar cell is reduced.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

The invention discloses a hybrid passivation back contact cell and a production method thereof, and relates to the field of solar cells. The preparation method comprises the steps of silicon wafer polishing; sequentially depositing a tunneling oxide layer and a doped polycrystalline silicon layer on the back surface of the polished silicon wafer; a P region and an N region in future are defined on the doped polycrystalline silicon layer on the back surface of the silicon wafer through laser ablation; performing acid polishing treatment on the front surface of the silicon wafer; performing alkali texturing treatment on the front surface of the silicon wafer; depositing a passivation layer on the front surface of the silicon wafer; cleaning the back of the silicon wafer; an intrinsic microcrystalline silicon layer and a doped microcrystalline silicon layer are sequentially deposited on the back surface of the silicon wafer; carrying out laser ablation treatment on intrinsic and P-type microcrystalline silicon on an N-region contact region on the back surface of the silicon wafer, and exposing the N + doped polycrystalline silicon layer under the intrinsic and P-type microcrystalline silicon; depositing a TCO layer; laser ablation is carried out on the upper portion and the periphery of the polished lamination area of the N area and the P area, and an isolation ring groove is formed; the TBC passivation advantage is reserved, meanwhile, the technological process is simplified through laser patterning, and the efficiency bottleneck is broken through P-region intrinsic microcrystalline silicon and boron-doped microcrystalline silicon.

The invention relates to a solar cell and a photovoltaic module. The solar cell comprises a semiconductor substrate which is provided with a front surface and a back surface which are oppositely arranged; the back surface is a polished surface; the first intrinsic semiconductor layer is arranged on the back surface; the first doped microcrystalline silicon layer is arranged on one side, far away from the semiconductor substrate, of the first intrinsic semiconductor layer; the first doped microcrystalline silicon layer comprises a plurality of first microcrystal grains; wherein the ratio of the length of the first microcrystal grains to the thickness of the first doped microcrystal silicon layer is a, and a meets the following relational expression: a is more than or equal to 0.8 and less than or equal to 1.1; the included angle between the length direction of the first microcrystal grains and the thickness direction of the first doped microcrystal silicon layer is alpha, and alpha meets the following relational expression that alpha is larger than or equal to 0 degree and smaller than or equal to 45 degrees. The battery efficiency can be improved, and the preparation cost can be reduced.

The application discloses a heterojunction solar cell and a preparation method thereof. The method comprises the following steps: forming a first microcrystalline silicon layer on one side of a light-receiving surface of a silicon substrate; forming a second microcrystalline silicon layer on the first microcrystalline silicon layer; and forming a third microcrystalline silicon layer on the second microcrystalline silicon layer; the deposition rates of the first microcrystalline silicon layer, the second microcrystalline silicon layer and the third microcrystalline silicon layer are respectively v1, v2 and v3; wherein v2 is less than v1, and v2 is less than v3. By arranging three microcrystalline silicon layers on the light-receiving surface of the silicon substrate and adjusting the relationship of the deposition rates of the three microcrystalline silicon layers during preparation, the optical property of the light-receiving surface of the silicon substrate can be improved, the parasitic absorption of the film layers to ultraviolet light during the working of the heterojunction solar cell is fundamentally prevented, and the performance of the solar cell after illumination is greatly reduced.

Provided are preparation for a microcrystalline silicon film material, preparation for a solar cell, a solar cell, and a use. By means of the preparation method for a microcrystalline silicon film material, a microcrystalline silicon film material having an expected structure can be prepared at low costs, and a low-cost and high-efficiency preparation method for a solar cell can be obtained by means of the preparation for a microcrystalline silicon film material. In addition, the solar cell provided by embodiments of the present application can be used for providing a solar cell module having high photoelectric conversion efficiency.

The invention relates to preparation of microcrystalline silicon, in particular to a method for preparing microcrystalline silicon, which comprises the following steps of: 1, inserting a substrate part into a preparation cavity at the bottom; 2, the conversion ring rotates to drive the substrate part to pass through the space between the two airflow cavities, and the airflow cavities spray airflow to clean the substrate part; 3, the conversion ring rotates to drive the substrate part to pass through the space between the two vacuum cavities, and the vacuum cavities conduct vacuumizing treatment on the preparation cavity; 4, the conversion ring rotates to drive the substrate part to move to the position between the two preparation parts, and the two preparation parts spray silicon source gas and excitation gas to deposit in the preparation cavity to form an amorphous silicon film; and microcrystalline silicon can be rapidly prepared in batches.

The present invention relates to a method for preparing an oxygen-doped microcrystalline silicon thin film, comprising: texturing a silicon wafer substrate to obtain a double-sided texturized silicon wafer; depositing intrinsic silicon layers on both sides of the texturized silicon wafer to obtain a first structure; placing the first structure in a hot wire chemical vapor deposition device and introducing H2 to hydrogen etch the surface of the silicon wafer; then controlling the pressure in the reaction chamber of the hot wire chemical vapor deposition device while introducing SiH4 and H2 to deposit a seeding layer on the intrinsic silicon layer on the light-facing side of the texturized silicon wafer to obtain a second structure; and simultaneously introducing SiH4, H2, N2O, and PH3 into the reaction chamber to deposit an oxygen-doped microcrystalline silicon layer on the seeding layer of the second structure. Furthermore, the present invention also relates to an apparatus for preparing an oxygen-doped microcrystalline silicon thin film using the above method. The present invention can form an oxygen-doped microcrystalline thin film on the light-facing side of, for example, a heterojunction cell using a HoFCVD device, thereby solving the problem of parasitic absorption on the light-facing side.

The invention belongs to the field of battery preparation, and relates to a TCO layer coating method for reducing amorphous silicon damage of an HJT battery and the HJT battery. According to the method, the technology of low-power-density H2-free of the bottom layer and high-power-density H2 of the top layer is adopted, the film thickness is comprehensively adjusted, the film forming efficiency cannot be reduced, and meanwhile through reasonable technological condition adjustment, the obtained whole film layer is excellent in photoelectric characteristic. According to the method, the minority carrier lifetime of the battery piece after top layer film deposition is verified to be not attenuated, the minority carrier lifetime is not attenuated to represent that the non-microcrystalline silicon layer and the microcrystalline silicon layer are not damaged, the film forming speed and the battery characteristics are not reduced, and the damage of the non-microcrystalline silicon can be reduced.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell preparation method adopting a laser-induced crystallization process and a cell, and the method comprises the steps: S1082, carrying out the laser engraving of at least a part of a second doped amorphous silicon layer in a second semiconductor opening region through the laser-induced crystallization process, crystallizing the second doped amorphous silicon layer corresponding to the laser engraving area to form a second doped microcrystalline silicon layer; the conditions of the laser-induced crystallization process are as follows: the laser spot energy density is less than 190mJ / cm < 2 >, and the spot overlapping rate is greater than or equal to 50%. According to the invention, the requirement on the thickness of amorphous silicon and the requirement on the consistency of a film layer are greatly reduced; meanwhile, the requirements on a laser and a light path are reduced, and the preparation process is simplified, so that large-scale mass production is facilitated; and meanwhile, good battery efficiency is considered, and the amorphous silicon productivity is improved.

The invention relates to the technical field of photovoltaic cells, in particular to an HJT solar cell and a preparation method thereof. The HJT solar cell provided by the invention sequentially comprises a first electrode, an N-type conductive film layer, an N-type microcrystalline silicon film layer, a first intrinsic microcrystalline silicon layer, an N-type monocrystalline silicon wafer, a second intrinsic microcrystalline silicon layer, a P-type microcrystalline silicon film layer, a P-type polymer conductive film layer and a second electrode from one side surface to the other side surface. The transparent conductive thin film on the P-type microcrystalline silicon layer on the backlight surface of the HJT solar cell is a P-type polymer conductive thin film, the thin film can be prepared in a wet process (such as coating) and flash annealing mode, bombardment damage of high-energy particles to the P-type microcrystalline silicon layer can be effectively reduced, and work function matching with a substrate can be carried out.

The utility model provides a heterojunction battery piece and production equipment thereof, and the heterojunction battery piece comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer which is formed on the front surface of the N-type silicon wafer, an N-type doped microcrystalline silicon layer which is formed on the front surface of the first intrinsic amorphous silicon layer, and a second intrinsic amorphous silicon layer which is formed on the front surface of the N-type doped microcrystalline silicon layer. The N-type doped microcrystalline silicon layer is formed on the back surface of the N-type silicon wafer, the first transparent conductive thin film layer is formed on the front surface of the N-type doped microcrystalline silicon layer, the electrode is formed on the front surface of the first transparent conductive thin film layer, the second intrinsic amorphous silicon layer is formed on the back surface of the N-type silicon wafer, and the P-type doped microcrystalline silicon layer is formed on the back surface of the second intrinsic amorphous silicon layer. The first transparent conductive thin film layer is formed on the back surface of the P-type doped microcrystalline silicon layer, the second transparent conductive thin film layer is formed on the back surface of the P-type doped microcrystalline silicon layer, the third transparent conductive thin film layer is formed on the back surface of the second transparent conductive thin film layer, the copper film layer is formed on the whole back surface of the third transparent conductive thin film layer, and the protective layer is formed on the back surface of the copper film layer.

The utility model discloses a combined passivation back contact cell, comprising a silicon wafer, a third semiconductor layer and an anti-reflection layer which are successively arranged on the front surface of the silicon wafer, and a second semiconductor opening area, a first semiconductor opening area and a transition area which are arranged on the back surface of the silicon wafer. The third semiconductor layer is composed of a second intrinsic amorphous silicon layer and a microcrystalline silicon layer which are sequentially deposited on the front face of the silicon wafer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type microcrystalline silicon / amorphous silicon layer, a fullerene transmission film, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the surface of the transition area to form an insulating groove to isolate the first semiconductor and the second semiconductor. A layer of fullerene film is added to serve as a buffer layer, so that the electronic impedance is reduced, the carrier injection and transmission efficiency is improved, and the cell efficiency is improved.

The invention provides P-type microcrystalline silicon and a preparation method and application thereof, and belongs to the technical field of photoelectric semiconductor devices. The method comprises the following steps: performing first plasma enhanced chemical vapor deposition (process gas comprises SiF4 + Ar + H2) to obtain a treatment layer; and performing second plasma enhanced chemical vapor deposition (process gas comprises SiH4 + H2 + B2H6) on the surface of the processing layer to form a P-type microcrystalline silicon main body layer. According to the invention, the F ions generated by decomposition of SiF4 in the plasma have a certain etching effect and are helpful for breaking weak Si-Si bonds on amorphous silicon and providing nucleation sites of microcrystalline silicon, and meanwhile, the F ions reduce the surface potential of the substrate located on the anode to a certain extent and are helpful for adsorbing H positive ions in the plasma; a dangling bond in microcrystalline silicon is passivated, crystallization is promoted, and a processing layer obtained by deposition with SiF4 as a silicon source provides a method for more efficiently depositing P-type microcrystalline silicon with a high crystallization rate.

The application provides a thin film transistor and a preparation method thereof and a display panel, and comprises the following steps: providing a substrate, forming an insulating layer on the surface of the substrate, and forming a semiconductor structure by combining the substrate and the insulating layer; and forming a channel layer on the surface of the semiconductor structure under a preset condition, wherein the material of the channel layer comprises microcrystalline silicon, and the preset condition comprises a preset temperature range. The technical scheme of the application can ensure that the channel layer has better electron mobility, and the preparation process does not cause damage to the substrate.

The invention relates to a siliceous furnace lining material for a smelting environment with a high scrap ratio and a preparation method of the siliceous furnace lining material. The siliceous furnace lining material comprises the following components in parts by mass: 30-40 parts of selected microcrystalline silica tailings, 30-40 parts of fused quartz, 20-35 parts of spherical zirconium composite silica powder and 1-2 parts of a sintering aid. Wherein the SiO2 content of the selected microcrystalline silica tailings is greater than or equal to 99.5%. According to the present invention, the 99.5% selected microcrystalline silica tailings are adopted as the aggregate, such that the impurity reaction sites can be effectively reduced, the refractoriness can be increased to more than or equal to 1720 DEG C, and the spherical zirconium composite silica micro-powder is adopted as the matrix so as to effectively inhibit the cracking of the furnace lining and improve the fluidity of the slurry; boric acid in the sintering aid can promote low-temperature sintering to form a glass-phase combined phase. According to the siliceous furnace lining material for the smelting environment with the high scrap ratio, the sintering layer is specifically composed of the cristobalite phase and the silicon zirconium glass phase, and the siliceous furnace lining of an intermediate frequency furnace can be better protected.

The invention discloses a back contact solar cell and a preparation process thereof, and belongs to the technical field of solar cells, the back contact solar cell comprises a monocrystalline silicon wafer, a P-poly region and an N-poly region, a first tunneling layer is arranged between the P-poly region and the monocrystalline silicon wafer, a second tunneling layer is arranged between the N-poly region and the monocrystalline silicon wafer, and the P-poly region and the N-poly region are arranged on the first tunneling layer. Passivation anti-reflection layers are arranged on the back face of the monocrystalline silicon wafer and located between the P-poly region and the N-poly region, the surfaces of the P-poly region and the N-poly region and the front face of the monocrystalline silicon wafer, outer anti-reflection layers are arranged on the surfaces of the passivation anti-reflection layers, P electrodes are arranged on the surface of the P-poly region, N electrodes are arranged on the surface of the N-poly region, the passivation anti-reflection layers are made of microcrystalline silicon carbide materials, and the outer anti-reflection layers are made of microcrystalline silicon carbide materials. And the parasitic absorption of the front over-thick silicon nitride is reduced, the light reflection is reduced, the short-circuit current is improved, and the optimization of the cell efficiency is realized.

The invention discloses a heterojunction battery and a preparation method thereof. The preparation method comprises the steps of preparing the semiconductor substrate layer; preparing intrinsic amorphous silicon layers on two opposite surfaces of the semiconductor substrate layer respectively; depositing a doping layer on the intrinsic amorphous silicon layer; and manufacturing a transparent conductive layer on the doped layer. The preparation of the doping layer on the intrinsic amorphous silicon layer comprises the following steps: depositing a collection layer on at least one intrinsic amorphous silicon layer; a microcrystalline silicon layer is deposited on the collection layer, and carrier gas used in the process of depositing the microcrystalline silicon layer comprises argon. In this way, the deposition efficiency of the microcrystalline silicon layer and the photoelectric conversion efficiency of the heterojunction cell can be improved.

The application relates to the photovoltaic technology field and discloses a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a silicon substrate with a first surface and a second surface arranged oppositely; a first intrinsic amorphous silicon layer located on at least a partial region of the first surface of the silicon substrate; a first doped microcrystalline silicon layer located on a side of the first intrinsic amorphous silicon layer away from the silicon substrate; a first doped amorphous silicon layer located on a side of the first doped microcrystalline silicon layer away from the first intrinsic amorphous silicon layer, wherein the first doped amorphous silicon layer and the first doped microcrystalline silicon layer have the same doping type; and a first transparent conductive layer located on a side of the first doped amorphous silicon layer away from the first doped microcrystalline silicon layer. The application can improve the cell contact performance, reduce the cell series resistance and thus improve the cell conversion efficiency.

The invention discloses a microcrystalline silicon-carbon composite material as well as a preparation method and application thereof, a slice electrode or a solid electrode is used as a working electrode, an inorganic electrolyte is added into a strong polar solution, and then alkylsilane or halogenated alkylsilane is added to prepare an electrolyte; a reference electrode and a counter electrode form a three-electrode electrolytic tank system for electrolysis, the voltage ranges from-2.0 V to-5.0 V, the working electrode is cleaned with an organic solvent after electrolysis is finished, and the microcrystalline silicon-carbon composite material is obtained after drying and carbonization. According to the prepared negative electrode material, a scanning electron microscope equipped with an energy dispersion X-ray spectrometer is adopted to perform point analysis on a specific micro-area of the microcrystalline silicon-carbon composite material, the content of silicon deposited between porous carbon is greater than or equal to 50%, and the content of silicon deposited in carbon particles is less than or equal to 10%. The prepared composite material is high in capacity and first coulombic efficiency, safe in preparation process, low in cost and easy to industrialize.

The invention belongs to the technical field of solar cells, and provides a method for improving passivation and contact of polycrystalline silicon and a preparation method of a solar cell, and the method for improving passivation and contact of polycrystalline silicon comprises the following steps: preparing a tunneling oxide layer on the surface of a silicon wafer; preparing a first heteroatom doped amorphous silicon layer on the surface of the tunneling oxide layer; heteroatoms are one or more of C, N and O; preparing a second microcrystalline silicon layer on the surface of the first heteroatom doped amorphous silicon layer; annealing the first heteroatom doped amorphous silicon layer and the second microcrystalline silicon layer to obtain an n-type or p-type doped polycrystalline silicon layer; and preparing a conductive graphite layer on the surface of the n-type or p-type doped polycrystalline silicon layer. According to the method, bottom-to-top crystallization of the n-type or p-type doped polycrystalline silicon layer can be realized, the uniformity and passivation quality of the polycrystalline silicon layer can be improved, the problems of contact resistance increase and fill factor reduction caused by heteroatom doping can be compensated, the passivation effect is improved, the contact resistance is reduced, and the cell conversion efficiency is improved.

An embodiment of the present invention provides a film coating apparatus comprising: a plasma assembly including: a first electrode assembly; a second electrode assembly, the gap between the second electrode assembly and the first electrode assembly forming a deposition space in which a material is located; and a hot wire assembly for utilizing a temperature field to decompose reactants. In the technical solution of the present invention, plasma-enhanced chemical vapor deposition and hot wire chemical vapor deposition processes are simultaneously employed to coat silicon wafers. The hot wire assembly can mitigate the side effects of ion bombardment, reducing the likelihood of film defects due to ion bombardment. Furthermore, the ion-free nature of the hot wire assembly is beneficial for improving the quality of the deposited film. Combined with the plasma-enhanced effects of the first and second electrode assemblies, the film deposition area is uniform, reducing the likelihood of the hot wire itself being coated. This facilitates the large-scale production of solar cells, achieving high-speed deposition of microcrystalline silicon and nanosilicon, and improving product quality.

The invention discloses a coloring method for glass and ceramic materials, which comprises the following steps: firstly, carrying out conventional surface cleaning pretreatment on a workpiece, and then carrying out drying treatment; putting the dried workpiece into a vacuum reaction furnace, sealing, vacuumizing to remove air in the furnace, then preheating, and adding an organic silicon precursor and an oxidizing agent to carry out a film forming reaction after a preset reaction temperature is reached; and after the film layer reaches the expected thickness, heating or temperature maintaining is stopped, the workpiece is cooled, meanwhile, a vacuum pump is started to discharge reaction residual gas, and after the temperature is reduced, the furnace is opened to take the workpiece. The chemical vapor deposition method is applied to the coloring field of glass and ceramic materials for the first time. A layer of compact microcrystalline silicon dioxide film doped with nitrogen and carbon is deposited on the surface of a material, and a transparent and bright color is formed by utilizing the interference effect of light on the upper surface and the lower surface.