147 results about "Microcrystalline silicon" patented technology

The invention provides a solar cell and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The solar cell comprises a silicon substrate and a semiconductor layer, the silicon substrate comprises a first surface and a second surface which are opposite, the semiconductor layer is located on the first surface, the first semiconductor layer comprises a second structural region and a first structural region, and the crystallization degree of the first structural region is larger than that of the second structural region; wherein the second structural region is closer to the first surface than the first structural region, and the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon or microcrystalline silicon. The semiconductor layer has a crystallization structure, and the contact resistance between the semiconductor layer and the conductive material layer can be reduced, so that the current transmission characteristic is improved, the energy consumption in the current collection process is reduced, and the cell efficiency is improved.

The invention discloses a combined passivation back contact battery which comprises an N-type silicon wafer, a second intrinsic amorphous silicon layer, a microcrystalline silicon layer, an anti-reflection layer, a second semiconductor opening region, a first semiconductor opening region and a transition region, the anti-reflection layer is a single-layer amorphous silicon carbonitride layer or a laminated structure composed of an amorphous silicon carbide layer and an amorphous silicon carbonitride layer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the transparent conductive film on the surface of the transition area to form an insulation groove. Amorphous silicon carbonitride or amorphous silicon carbide / amorphous silicon carbonitride laminated layers are adopted as the anti-reflection layers, so that reflection loss is reduced, the reliability and durability of the cell are improved, and the conversion efficiency of the cell is improved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell, a preparation method thereof and a cell assembly. A second semiconductor layer comprises an intrinsic silicon layer and a second doped silicon layer; the second doped silicon layer comprises second doped microcrystalline silicon and second doped amorphous silicon located at the overlapping region, and further comprises an amorphous silicon insulating layer, and the amorphous silicon insulating layer is located outside the second doped amorphous silicon and does not cover the second doped microcrystalline silicon; an isolation groove is formed in the part, located in the overlapping area, of the conductive film layer, and a distance is reserved between the isolation groove and the junction of the side face of the first semiconductor layer and the second semiconductor layer. Leakage current generated at the junction of the side face of the first semiconductor layer and the second semiconductor layer can be remarkably reduced, meanwhile, the passivation effect of the second semiconductor layer is guaranteed, the isolation groove does not need to stretch across the junction, the second semiconductor layer cannot be damaged, the parallel resistance of the battery is improved, and the current and efficiency of the battery are improved.

The invention discloses a solar cell and a manufacturing method thereof, relates to the field of photovoltaic technology, and aims to increase the surface area of one side, deviating from a semiconductor substrate, of a first semiconductor layer and facilitate the increase of the contact area between the first semiconductor layer and a transparent conductive layer or an electrode and other conductive materials. Therefore, the transmission loss of carriers collected in the first semiconductor layer transmitted to the conductive material is reduced, and the working efficiency of the solar cell is improved. The solar cell includes a semiconductor substrate and a first semiconductor layer. The semiconductor substrate has a first surface and a second surface opposite to each other. At least one of the first surface and the second surface is a target surface. The surface of at least part of the area of the target surface is a suede, and the suede comprises a plurality of pyramid-like parts. The first semiconductor layer is disposed on the textured surface. A hole structure is arranged in the first semiconductor layer, and the hole structure is distributed in the part, covering at least part of the pyramid-like top, of the first semiconductor layer. The material of the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon.

The invention discloses a preparation method of an intrinsic passivation structure, the intrinsic passivation structure and a battery, the intrinsic passivation structure comprises a base layer, the surface of which is provided with a first interface layer; the first intrinsic layer is arranged on the first interface layer, and a second interface layer is arranged on the surface of the first intrinsic layer; the second intrinsic layer is arranged on the second interface layer, and a third interface layer is arranged on the surface of the second intrinsic layer; and the doped microcrystalline silicon layer is arranged on the surface of the third interface layer. According to the invention, the surfaces of the base layer, the first intrinsic layer and the second intrinsic layer are treated, so that the contact between the intrinsic amorphous silicon and the crystalline silicon substrate is effectively improved, the generation of nano twin crystals is inhibited, the passivation effect is enhanced, and the minority carrier lifetime is prolonged.

The utility model discloses a heterojunction cell and a photovoltaic module, and relates to the technical field of photovoltaics. The heterojunction cell comprises a first transparent conductive layer, an n-type microcrystalline silicon layer, a first intrinsic amorphous silicon layer, an n-type monocrystalline silicon layer, a second intrinsic amorphous silicon layer, a p-type microcrystalline silicon layer and a second transparent conductive layer which are stacked in sequence. The heterojunction cell also includes a first electrode connected to the first transparent conductive layer and a second electrode connected to the second transparent conductive layer. Wherein the first transparent conductive layer comprises a first zinc oxide layer, a first indium tin oxide layer and a first titanium oxide layer which are stacked in sequence. The transparent conductive layer is arranged to be a composite layer structure made of three materials, so that the use amount of expensive indium tin oxide can be remarkably reduced, and the cost is reduced. The first conductive film with the composite layer structure can also relieve the problem of ultraviolet-induced degradation of the heterojunction cell, improve the performance stability of the cell and prolong the service life of the cell.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and the back contact solar cell comprises a substrate; the first doped regions and the second doped regions are alternately arranged on the backlight surface of the substrate; wherein the first doped region comprises a tunneling oxide layer and a first doped layer, the first doped layer is located on the side, away from the substrate, of the tunneling oxide layer, and the first doped layer is a polycrystalline silicon doped layer; the second doped region comprises an intrinsic amorphous silicon layer, a second doped layer and an insulating structure, the second doped layer and the insulating structure are located on the side, away from the substrate, of the intrinsic amorphous silicon layer, the insulating structure is located between the second doped layer and the first doped layer, and the doping type of the second doped layer is opposite to that of the first doped layer; and the second doping layer is an amorphous silicon doping layer or a microcrystalline silicon doping layer. The back contact solar cell provided by the invention is at least beneficial to avoiding electric leakage of the back contact cell.

Disclosed in the present application are a solar cell and a manufacturing method therefor, and a photovoltaic module. The solar cell comprises: a semiconductor substrate, which has a first surface and a second surface opposite to each other; and a first semiconductor layer, which is arranged on the first surface, and comprises a first part and a second part that is closely adjacent to the first part in a second direction, wherein the degree of crystallization of the first part is greater than that of the second part, and the first semiconductor layer is made of at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. By providing a rational crystallized area and a rational non-crystallized area on the first semiconductor layer, the overall cell efficiency of the solar cell is optimized by means of the higher degree of crystallization of the first part, thereby improving the cell efficiency; in addition, the passivation effect of the second part is ensured by means of the lower degree of crystallization of the second part, thereby preventing electric leakage.

The invention discloses a boron doping method, a boron doping structure and a back contact battery. The method comprises the following steps: step 1) pre-crystallization treatment; step 2) pre-oxidation; (3) boron diffusion; wherein the pre-crystallization treatment is to treat the amorphous silicon layer in the silicon wafer base material in a gradient variable pressure mode in an inert gas atmosphere. According to the method, before pre-oxidation and boron diffusion, amorphous silicon is converted into microcrystalline silicon in a gradient transformation manner, and gradual crystallization is realized, so that lattice stress is reduced, gradient distribution of grain sizes can be realized, the problem of uneven grain sizes caused by a single crystallization condition and the problem of doping concentration fluctuation caused by an unordered structure of the amorphous silicon are avoided, and the yield of the amorphous silicon is improved. According to the method, the boron atoms can be transferred to a balance position more easily, an ordered structure is formed, the distribution is more uniform, the boron-doped structure with better sheet resistance uniformity is obtained, and the photoelectric conversion efficiency of the back contact battery based on the boron-doped structure is further improved.

The invention relates to the field of solar cells, in particular to a solar cell and a photovoltaic module. The solar cell includes: a substrate; the passivation layer is arranged on the surface of the substrate, and the passivation layer comprises an intrinsic amorphous silicon layer; the intrinsic silicon oxide layer is arranged on the face, away from the substrate, of the passivation layer, the content range of high-valence silicon oxide in the intrinsic silicon oxide layer is larger than 50% and smaller than or equal to 95%, and the valence state of the silicon element in the high-valence silicon oxide is larger than or equal to positive bivalence; the doped layer comprises a doped microcrystalline silicon layer, and the doped microcrystalline silicon layer is arranged on the face, away from the passivation layer, of the intrinsic silicon oxide layer; the transparent conducting layer is arranged on one surface, deviating from the intrinsic silicon oxide layer, of the doping layer; and the electrode is arranged on the transparent conductive layer. The solar cell can solve the problem of performance restriction of the passivation layer and the doping layer caused by the existence of the incubation layer.

The embodiment of the utility model provides a solar cell, a photovoltaic module and a photovoltaic system, the solar cell comprises a first surface and a second surface which are opposite to each other, and a side surface located between the first surface and the second surface, and the side surface is provided with a first area close to the first surface and a second area close to the second surface; a first tunneling oxide layer, a first doped polycrystalline silicon layer and a first antireflection layer are sequentially stacked on the first region; and a first intrinsic amorphous silicon layer, a first doped microcrystalline silicon layer and a second antireflection layer are sequentially laminated on the second region. According to the embodiment of the invention, the edge passivation can be enhanced, the efficiency of the solar cell is improved, the edge winding plating of the tunneling oxide layer and the doped polycrystalline silicon does not need to be removed, the etching process is reduced, and the production cost is reduced.

The invention relates to the technical field of solar cells, in particular to a low-cost silicon heterojunction solar cell and a preparation method thereof, a light receiving surface of the low-cost silicon heterojunction solar cell comprises a microcrystalline silicon film and a metal electrode, a front transparent conductive film is arranged on the microcrystalline silicon film below the metal electrode, and anti-reflection films are arranged on other microcrystalline silicon films. The front transparent conductive film is arranged below the metal electrode, so that compared with a conventional heterojunction solar cell, the area of the front transparent conductive film is reduced, and the production cost is greatly reduced.

The invention provides a preparation method of a heterojunction solar cell and the heterojunction solar cell. The preparation method comprises the following steps: firstly, providing a monocrystalline silicon wafer and carrying out texturing cleaning on the monocrystalline silicon wafer, then respectively forming a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer on the front and back surfaces of the monocrystalline silicon wafer, then forming an N-type amorphous / microcrystalline silicon layer on the first intrinsic amorphous silicon layer, then forming a P-type amorphous / microcrystalline silicon layer on the second intrinsic amorphous silicon layer, and finally forming a P-type amorphous / microcrystalline silicon layer on the P-type amorphous / microcrystalline silicon layer on the N-type amorphous / microcrystalline silicon layer. Respectively forming a first transparent conductive film layer and a second transparent conductive film layer on the N-type amorphous / microcrystalline silicon layer and the P-type amorphous / microcrystalline silicon layer, then forming a first anti-reflection film layer and a second anti-reflection film layer on the first transparent conductive film layer and the second transparent conductive film layer, and then forming a first groove and a second groove penetrating through the first anti-reflection film layer and the second anti-reflection film layer; respectively forming a first electrode and a second electrode in the first groove and the second groove through an electroplating process; and finally, carrying out an annealing process. The mass production of the heterojunction solar cell with the anti-reflection film can be realized, and the contact between the metal electrode and the transparent conductive layer is not influenced.

The present application belongs to the technical field of back-contact cells, and specifically relates to a back-contact cell with a specific front-side passivation structure, and a preparation method therefor and the application thereof. The back-contact cell comprises a silicon wafer having a front side and a back side, a first semiconductor layer and a second semiconductor layer which are both disposed on the back side of the silicon wafer, and a third semiconductor layer and an antireflective layer which are sequentially disposed outwardly on the front side of the silicon wafer, wherein the third semiconductor layer includes a first intrinsic hydrogenated amorphous silicon layer and an intrinsic oxygen-doped microcrystalline silicon layer which are sequentially disposed outwardly, and the antireflective layer includes a phosphorus-doped silicon nitride layer, a non-phosphorus-doped silicon nitride layer and an oxide layer which are sequentially disposed outwardly. The back-contact cell of the present application can reduce investment in a plate-type PECVD chamber while ensuring a front-side passivation effect, such that investment in devices is reduced, the process flow is simplified, and both the cell density and cell conversion efficiency are improved while the manufacturing costs are reduced.

The application provides a method for preparing a silicon negative electrode material by using SiF4 as a raw material, and belongs to the field of battery negative electrode materials. The method for preparing the silicon negative electrode material by using SiF4 as the raw material can simultaneously obtain microcrystalline silicon and amorphous silicon by using silicon tetrafluoride as a silicon source, controlling the placement position of a substrate, the radio frequency power of an inductive radio frequency coil and the temperature of a reaction zone; and the silicon material capable of meeting the use of a lithium ion battery negative electrode can be further obtained by controlling the proportion of silicon tetrafluoride, hydrogen and argon. The method provided by the application can simultaneously obtain microcrystalline silicon and amorphous silicon, and the lithium ion battery prepared from the microcrystalline silicon and the amorphous silicon has good cycle life and coulomb efficiency, and can be used as a negative electrode material.

The invention provides a manufacturing method of a doped microcrystalline silicon layer, a heterojunction solar cell and a preparation method of the heterojunction solar cell. The manufacturing method of the doped microcrystalline silicon layer comprises the steps that firstly, PECVD equipment is provided, the PECVD equipment comprises a reaction cavity, an upper polar plate and a lower polar plate, the upper polar plate and the lower polar plate are located in the reaction cavity and are oppositely arranged in parallel, and the upper polar plate is connected with a radio frequency power source; placing a silicon wafer on the lower polar plate and between the upper polar plate and the lower polar plate; the substrate distance between the upper pole plate and the lower pole plate is set as a first distance, a microcrystalline silicon seed layer is deposited through a doping deposition process, and the first distance ranges from 26 mm to 50 mm; and finally, the distance between the substrates is adjusted to be a second distance, the doping deposition process is carried out, a microcrystalline silicon main layer is deposited on the microcrystalline silicon seed layer, and the range of the second distance is 10-24 mm. According to the invention, the quality of the doped microcrystalline silicon layer can be improved, the stability of the heterojunction solar cell is improved, and the dark attenuation of the heterojunction solar cell is reduced.

A driving substrate, a manufacturing method thereof and a display panel are provided. First thin film transistors are provided in a pixel region and second thin film transistors are provided in a frame region, in which a first active layer of the first thin film transistor includes an amorphous silicon layer and a microcrystalline silicon layer stacked, and a channel of the second active layer of the second thin film transistor includes polysilicon, so that mobility of the second thin film transistor is greater than that of the first thin film transistor. Also, the polysilicon can be formed by crystallizing the amorphous silicon layer and the microcrystalline silicon layer, which are stacked, as a monolithic crystal.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

The invention discloses a hybrid passivation back contact cell and a production method thereof, and relates to the field of solar cells. The preparation method comprises the steps of silicon wafer polishing; sequentially depositing a tunneling oxide layer and a doped polycrystalline silicon layer on the back surface of the polished silicon wafer; a P region and an N region in future are defined on the doped polycrystalline silicon layer on the back surface of the silicon wafer through laser ablation; performing acid polishing treatment on the front surface of the silicon wafer; performing alkali texturing treatment on the front surface of the silicon wafer; depositing a passivation layer on the front surface of the silicon wafer; cleaning the back of the silicon wafer; an intrinsic microcrystalline silicon layer and a doped microcrystalline silicon layer are sequentially deposited on the back surface of the silicon wafer; carrying out laser ablation treatment on intrinsic and P-type microcrystalline silicon on an N-region contact region on the back surface of the silicon wafer, and exposing the N + doped polycrystalline silicon layer under the intrinsic and P-type microcrystalline silicon; depositing a TCO layer; laser ablation is carried out on the upper portion and the periphery of the polished lamination area of the N area and the P area, and an isolation ring groove is formed; the TBC passivation advantage is reserved, meanwhile, the technological process is simplified through laser patterning, and the efficiency bottleneck is broken through P-region intrinsic microcrystalline silicon and boron-doped microcrystalline silicon.

The invention relates to a solar cell and a photovoltaic module. The solar cell comprises a semiconductor substrate which is provided with a front surface and a back surface which are oppositely arranged; the back surface is a polished surface; the first intrinsic semiconductor layer is arranged on the back surface; the first doped microcrystalline silicon layer is arranged on one side, far away from the semiconductor substrate, of the first intrinsic semiconductor layer; the first doped microcrystalline silicon layer comprises a plurality of first microcrystal grains; wherein the ratio of the length of the first microcrystal grains to the thickness of the first doped microcrystal silicon layer is a, and a meets the following relational expression: a is more than or equal to 0.8 and less than or equal to 1.1; the included angle between the length direction of the first microcrystal grains and the thickness direction of the first doped microcrystal silicon layer is alpha, and alpha meets the following relational expression that alpha is larger than or equal to 0 degree and smaller than or equal to 45 degrees. The battery efficiency can be improved, and the preparation cost can be reduced.

The application discloses a heterojunction solar cell and a preparation method thereof. The method comprises the following steps: forming a first microcrystalline silicon layer on one side of a light-receiving surface of a silicon substrate; forming a second microcrystalline silicon layer on the first microcrystalline silicon layer; and forming a third microcrystalline silicon layer on the second microcrystalline silicon layer; the deposition rates of the first microcrystalline silicon layer, the second microcrystalline silicon layer and the third microcrystalline silicon layer are respectively v1, v2 and v3; wherein v2 is less than v1, and v2 is less than v3. By arranging three microcrystalline silicon layers on the light-receiving surface of the silicon substrate and adjusting the relationship of the deposition rates of the three microcrystalline silicon layers during preparation, the optical property of the light-receiving surface of the silicon substrate can be improved, the parasitic absorption of the film layers to ultraviolet light during the working of the heterojunction solar cell is fundamentally prevented, and the performance of the solar cell after illumination is greatly reduced.

Provided are preparation for a microcrystalline silicon film material, preparation for a solar cell, a solar cell, and a use. By means of the preparation method for a microcrystalline silicon film material, a microcrystalline silicon film material having an expected structure can be prepared at low costs, and a low-cost and high-efficiency preparation method for a solar cell can be obtained by means of the preparation for a microcrystalline silicon film material. In addition, the solar cell provided by embodiments of the present application can be used for providing a solar cell module having high photoelectric conversion efficiency.

The invention relates to preparation of microcrystalline silicon, in particular to a method for preparing microcrystalline silicon, which comprises the following steps of: 1, inserting a substrate part into a preparation cavity at the bottom; 2, the conversion ring rotates to drive the substrate part to pass through the space between the two airflow cavities, and the airflow cavities spray airflow to clean the substrate part; 3, the conversion ring rotates to drive the substrate part to pass through the space between the two vacuum cavities, and the vacuum cavities conduct vacuumizing treatment on the preparation cavity; 4, the conversion ring rotates to drive the substrate part to move to the position between the two preparation parts, and the two preparation parts spray silicon source gas and excitation gas to deposit in the preparation cavity to form an amorphous silicon film; and microcrystalline silicon can be rapidly prepared in batches.

The present invention relates to a method for preparing an oxygen-doped microcrystalline silicon thin film, comprising: texturing a silicon wafer substrate to obtain a double-sided texturized silicon wafer; depositing intrinsic silicon layers on both sides of the texturized silicon wafer to obtain a first structure; placing the first structure in a hot wire chemical vapor deposition device and introducing H2 to hydrogen etch the surface of the silicon wafer; then controlling the pressure in the reaction chamber of the hot wire chemical vapor deposition device while introducing SiH4 and H2 to deposit a seeding layer on the intrinsic silicon layer on the light-facing side of the texturized silicon wafer to obtain a second structure; and simultaneously introducing SiH4, H2, N2O, and PH3 into the reaction chamber to deposit an oxygen-doped microcrystalline silicon layer on the seeding layer of the second structure. Furthermore, the present invention also relates to an apparatus for preparing an oxygen-doped microcrystalline silicon thin film using the above method. The present invention can form an oxygen-doped microcrystalline thin film on the light-facing side of, for example, a heterojunction cell using a HoFCVD device, thereby solving the problem of parasitic absorption on the light-facing side.

The invention belongs to the field of battery preparation, and relates to a TCO layer coating method for reducing amorphous silicon damage of an HJT battery and the HJT battery. According to the method, the technology of low-power-density H2-free of the bottom layer and high-power-density H2 of the top layer is adopted, the film thickness is comprehensively adjusted, the film forming efficiency cannot be reduced, and meanwhile through reasonable technological condition adjustment, the obtained whole film layer is excellent in photoelectric characteristic. According to the method, the minority carrier lifetime of the battery piece after top layer film deposition is verified to be not attenuated, the minority carrier lifetime is not attenuated to represent that the non-microcrystalline silicon layer and the microcrystalline silicon layer are not damaged, the film forming speed and the battery characteristics are not reduced, and the damage of the non-microcrystalline silicon can be reduced.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell preparation method adopting a laser-induced crystallization process and a cell, and the method comprises the steps: S1082, carrying out the laser engraving of at least a part of a second doped amorphous silicon layer in a second semiconductor opening region through the laser-induced crystallization process, crystallizing the second doped amorphous silicon layer corresponding to the laser engraving area to form a second doped microcrystalline silicon layer; the conditions of the laser-induced crystallization process are as follows: the laser spot energy density is less than 190mJ / cm < 2 >, and the spot overlapping rate is greater than or equal to 50%. According to the invention, the requirement on the thickness of amorphous silicon and the requirement on the consistency of a film layer are greatly reduced; meanwhile, the requirements on a laser and a light path are reduced, and the preparation process is simplified, so that large-scale mass production is facilitated; and meanwhile, good battery efficiency is considered, and the amorphous silicon productivity is improved.

The invention relates to the technical field of photovoltaic cells, in particular to an HJT solar cell and a preparation method thereof. The HJT solar cell provided by the invention sequentially comprises a first electrode, an N-type conductive film layer, an N-type microcrystalline silicon film layer, a first intrinsic microcrystalline silicon layer, an N-type monocrystalline silicon wafer, a second intrinsic microcrystalline silicon layer, a P-type microcrystalline silicon film layer, a P-type polymer conductive film layer and a second electrode from one side surface to the other side surface. The transparent conductive thin film on the P-type microcrystalline silicon layer on the backlight surface of the HJT solar cell is a P-type polymer conductive thin film, the thin film can be prepared in a wet process (such as coating) and flash annealing mode, bombardment damage of high-energy particles to the P-type microcrystalline silicon layer can be effectively reduced, and work function matching with a substrate can be carried out.

The utility model relates to the technical field of solar power generation, and discloses a heterojunction solar cell, and an assembly and a system comprising the heterojunction solar cell. The heterojunction solar cell comprises a silicon substrate, a first intrinsic silicon oxide layer, a first intrinsic amorphous silicon layer, a second intrinsic silicon oxide layer, a first doped amorphous silicon layer, a first transparent conductive layer, a third intrinsic silicon oxide layer, a second intrinsic amorphous silicon layer, a fourth intrinsic silicon oxide layer, a second doped amorphous silicon layer and a second transparent conductive layer, according to the invention, the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are arranged; the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide, so that the overall resistance value of the battery can be reduced; and the overall electron transmission performance and the front light transmittance of the battery can be improved.

The utility model provides a heterojunction battery piece and production equipment thereof, and the heterojunction battery piece comprises an N-type silicon wafer, a first intrinsic amorphous silicon layer which is formed on the front surface of the N-type silicon wafer, an N-type doped microcrystalline silicon layer which is formed on the front surface of the first intrinsic amorphous silicon layer, and a second intrinsic amorphous silicon layer which is formed on the front surface of the N-type doped microcrystalline silicon layer. The N-type doped microcrystalline silicon layer is formed on the back surface of the N-type silicon wafer, the first transparent conductive thin film layer is formed on the front surface of the N-type doped microcrystalline silicon layer, the electrode is formed on the front surface of the first transparent conductive thin film layer, the second intrinsic amorphous silicon layer is formed on the back surface of the N-type silicon wafer, and the P-type doped microcrystalline silicon layer is formed on the back surface of the second intrinsic amorphous silicon layer. The first transparent conductive thin film layer is formed on the back surface of the P-type doped microcrystalline silicon layer, the second transparent conductive thin film layer is formed on the back surface of the P-type doped microcrystalline silicon layer, the third transparent conductive thin film layer is formed on the back surface of the second transparent conductive thin film layer, the copper film layer is formed on the whole back surface of the third transparent conductive thin film layer, and the protective layer is formed on the back surface of the copper film layer.