215 results about "Microcrystalline silicon" patented technology

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and the solar cell comprises a semiconductor substrate which is provided with a first surface and a second surface which are opposite to each other; the first semiconductor layer is arranged on the first face, the first semiconductor layer comprises a first part and a second part adjacent to the first part in the second direction, the crystallization degree of the first part is larger than that of the second part, and the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. According to the solar cell, the reasonable crystallization area and the non-crystallization area are arranged on the first semiconductor layer, the overall cell efficiency of the solar cell is optimized and improved by means of the high crystallization degree of the first part, and meanwhile the passivation effect of the second part is guaranteed and electric leakage is prevented by means of the low crystallization degree of the second part.

The invention provides a solar cell and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The solar cell comprises a silicon substrate and a semiconductor layer, the silicon substrate comprises a first surface and a second surface which are opposite, the semiconductor layer is located on the first surface, the first semiconductor layer comprises a second structural region and a first structural region, and the crystallization degree of the first structural region is larger than that of the second structural region; wherein the second structural region is closer to the first surface than the first structural region, and the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon or microcrystalline silicon. The semiconductor layer has a crystallization structure, and the contact resistance between the semiconductor layer and the conductive material layer can be reduced, so that the current transmission characteristic is improved, the energy consumption in the current collection process is reduced, and the cell efficiency is improved.

The invention discloses a combined passivation back contact battery which comprises an N-type silicon wafer, a second intrinsic amorphous silicon layer, a microcrystalline silicon layer, an anti-reflection layer, a second semiconductor opening region, a first semiconductor opening region and a transition region, the anti-reflection layer is a single-layer amorphous silicon carbonitride layer or a laminated structure composed of an amorphous silicon carbide layer and an amorphous silicon carbonitride layer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the transparent conductive film on the surface of the transition area to form an insulation groove. Amorphous silicon carbonitride or amorphous silicon carbide / amorphous silicon carbonitride laminated layers are adopted as the anti-reflection layers, so that reflection loss is reduced, the reliability and durability of the cell are improved, and the conversion efficiency of the cell is improved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell, a preparation method thereof and a cell assembly. A second semiconductor layer comprises an intrinsic silicon layer and a second doped silicon layer; the second doped silicon layer comprises second doped microcrystalline silicon and second doped amorphous silicon located at the overlapping region, and further comprises an amorphous silicon insulating layer, and the amorphous silicon insulating layer is located outside the second doped amorphous silicon and does not cover the second doped microcrystalline silicon; an isolation groove is formed in the part, located in the overlapping area, of the conductive film layer, and a distance is reserved between the isolation groove and the junction of the side face of the first semiconductor layer and the second semiconductor layer. Leakage current generated at the junction of the side face of the first semiconductor layer and the second semiconductor layer can be remarkably reduced, meanwhile, the passivation effect of the second semiconductor layer is guaranteed, the isolation groove does not need to stretch across the junction, the second semiconductor layer cannot be damaged, the parallel resistance of the battery is improved, and the current and efficiency of the battery are improved.

The utility model discloses a hybrid passivation back contact cell. The cell comprises a silicon wafer; the heterostructure comprises a first passivation layer which is at least stacked on the first region and a first microcrystalline silicon layer which is fully or partially doped; the first electrode structure is located on the first microcrystalline silicon layer in the heterostructure; the first passivation structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are stacked on the second region; the second electrode structure is located on the doped polycrystalline silicon layer in the first passivation structure; the second passivation structure comprises a second passivation layer at least stacked on the first surface and a second microcrystalline silicon layer which is fully or partially doped, the crystallization rate of the second microcrystalline silicon layer is larger than that of the first microcrystalline silicon layer, and the doping type of the second microcrystalline silicon layer is opposite to that of the first microcrystalline silicon layer. According to the utility model, good passivation and tunneling contact performance can be realized, and the electrical performance and the photoelectric conversion efficiency of the cell are significantly improved.

The invention discloses a magnetic control silicon-based adhesive as well as a preparation method and application thereof. The magnetic control silicon-based adhesive is prepared from the following components in parts by weight: 60 to 70 parts of silane modified polyurethane, 15 to 25 parts of a silane coupling agent, 40 to 60 parts of a magnetic nano material, 15 to 45 parts of microcrystalline silicon, 25 to 40 parts of nano calcium carbonate, 5 to 15 parts of titanium dioxide, 5 to 10 parts of talcum powder, 10 to 15 parts of amino silane, 3 to 8 parts of color paste and 1 to 4 parts of a catalyst. The silane modified polyurethane, the magnetic nano material and the microcrystalline silicon are reasonably compounded, so that the obtained adhesive not only has good adhesive force, but also has excellent water resistance and aging resistance, the introduction of the magnetic nano material not only can be matched with electromagnetic equipment to realize remote repair, but also can improve the curing capacity of the adhesive, so that the adhesive has a good application prospect. And the microcrystalline silicon enables the chemical properties of the adhesive to be more stable, and can meet the building repair requirements in various complex environments.

The invention discloses a solar cell and a manufacturing method thereof, relates to the field of photovoltaic technology, and aims to increase the surface area of one side, deviating from a semiconductor substrate, of a first semiconductor layer and facilitate the increase of the contact area between the first semiconductor layer and a transparent conductive layer or an electrode and other conductive materials. Therefore, the transmission loss of carriers collected in the first semiconductor layer transmitted to the conductive material is reduced, and the working efficiency of the solar cell is improved. The solar cell includes a semiconductor substrate and a first semiconductor layer. The semiconductor substrate has a first surface and a second surface opposite to each other. At least one of the first surface and the second surface is a target surface. The surface of at least part of the area of the target surface is a suede, and the suede comprises a plurality of pyramid-like parts. The first semiconductor layer is disposed on the textured surface. A hole structure is arranged in the first semiconductor layer, and the hole structure is distributed in the part, covering at least part of the pyramid-like top, of the first semiconductor layer. The material of the first semiconductor layer comprises at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon.

The invention discloses a preparation method of an intrinsic passivation structure, the intrinsic passivation structure and a battery, the intrinsic passivation structure comprises a base layer, the surface of which is provided with a first interface layer; the first intrinsic layer is arranged on the first interface layer, and a second interface layer is arranged on the surface of the first intrinsic layer; the second intrinsic layer is arranged on the second interface layer, and a third interface layer is arranged on the surface of the second intrinsic layer; and the doped microcrystalline silicon layer is arranged on the surface of the third interface layer. According to the invention, the surfaces of the base layer, the first intrinsic layer and the second intrinsic layer are treated, so that the contact between the intrinsic amorphous silicon and the crystalline silicon substrate is effectively improved, the generation of nano twin crystals is inhibited, the passivation effect is enhanced, and the minority carrier lifetime is prolonged.

The utility model discloses a heterojunction cell and a photovoltaic module, and relates to the technical field of photovoltaics. The heterojunction cell comprises a first transparent conductive layer, an n-type microcrystalline silicon layer, a first intrinsic amorphous silicon layer, an n-type monocrystalline silicon layer, a second intrinsic amorphous silicon layer, a p-type microcrystalline silicon layer and a second transparent conductive layer which are stacked in sequence. The heterojunction cell also includes a first electrode connected to the first transparent conductive layer and a second electrode connected to the second transparent conductive layer. Wherein the first transparent conductive layer comprises a first zinc oxide layer, a first indium tin oxide layer and a first titanium oxide layer which are stacked in sequence. The transparent conductive layer is arranged to be a composite layer structure made of three materials, so that the use amount of expensive indium tin oxide can be remarkably reduced, and the cost is reduced. The first conductive film with the composite layer structure can also relieve the problem of ultraviolet-induced degradation of the heterojunction cell, improve the performance stability of the cell and prolong the service life of the cell.

The invention is suitable for the field of photovoltaic technology, and provides a solar cell, a cell assembly and a photovoltaic system, the solar cell comprises a silicon substrate, the silicon substrate is provided with a back surface and a front surface which are oppositely arranged; the diffusion layer is positioned in a first region on the back surface of the silicon substrate; the doped layer is located in a second area on the back face of the silicon substrate, the doped layer comprises at least one of doped amorphous silicon, doped microcrystalline silicon and doped polycrystalline silicon, and the doped layer and the diffusion layer are doped with different polarities; two opposite surfaces of the tunneling layer are respectively in contact with the diffusion layer and the doping layer; the first electrode is communicated with the diffusion layer, the second electrode is communicated with the doping layer, and the first electrode is not communicated with the doping layer; the connection depth of the first electrode extending into the diffusion layer is greater than the connection depth of the second electrode extending into the doping layer. The hot spot risk can be reduced, the overall performance of the solar cell can be improved, and particularly the charge collection efficiency and the current transmission stability of the solar cell can be improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact solar cell, a preparation method thereof and a photovoltaic module, and the back contact solar cell comprises a substrate; the first doped regions and the second doped regions are alternately arranged on the backlight surface of the substrate; wherein the first doped region comprises a tunneling oxide layer and a first doped layer, the first doped layer is located on the side, away from the substrate, of the tunneling oxide layer, and the first doped layer is a polycrystalline silicon doped layer; the second doped region comprises an intrinsic amorphous silicon layer, a second doped layer and an insulating structure, the second doped layer and the insulating structure are located on the side, away from the substrate, of the intrinsic amorphous silicon layer, the insulating structure is located between the second doped layer and the first doped layer, and the doping type of the second doped layer is opposite to that of the first doped layer; and the second doping layer is an amorphous silicon doping layer or a microcrystalline silicon doping layer. The back contact solar cell provided by the invention is at least beneficial to avoiding electric leakage of the back contact cell.

Disclosed in the present application are a solar cell and a manufacturing method therefor, and a photovoltaic module. The solar cell comprises: a semiconductor substrate, which has a first surface and a second surface opposite to each other; and a first semiconductor layer, which is arranged on the first surface, and comprises a first part and a second part that is closely adjacent to the first part in a second direction, wherein the degree of crystallization of the first part is greater than that of the second part, and the first semiconductor layer is made of at least one of amorphous silicon, nanocrystalline silicon and microcrystalline silicon. By providing a rational crystallized area and a rational non-crystallized area on the first semiconductor layer, the overall cell efficiency of the solar cell is optimized by means of the higher degree of crystallization of the first part, thereby improving the cell efficiency; in addition, the passivation effect of the second part is ensured by means of the lower degree of crystallization of the second part, thereby preventing electric leakage.

The invention discloses a preparation method of a transparent conductive oxide ITO (Indium Tin Oxide) film, which comprises the following steps of: A1, selecting a silicon wafer, and depositing ITO transparent conductive layers on microcrystalline silicon layers on two surfaces of the silicon wafer; a2, after the ITO transparent conductive layer in the step A1 is prepared, the silicon wafer is placed in a microwave environment to be subjected to microwave treatment under the conditions that the frequency ranges from 1 GHz to 3 GHz, the power ranges from 500 W to 1200 W, the treatment time ranges from 30 seconds to 100 seconds, and then the transparent conductive oxide ITO thin film is prepared. The invention further discloses application of the transparent conductive oxide ITO thin film, and the application comprises the step of applying the transparent conductive oxide ITO thin film to preparation of a heterojunction solar cell so as to improve the electrical performance and the optical performance of the heterojunction solar cell. The transparent conductive oxide ITO thin film has high light transmittance and low sheet resistance, is applied to the heterojunction solar cell, and improves the photoelectric conversion efficiency and stability of the cell.

The invention provides a heterojunction cell and a preparation method and application thereof, and belongs to the technical field of photovoltaic.The preparation method comprises the steps that first intrinsic amorphous layers are deposited on the surface and the side face of one side of a substrate, and a second intrinsic amorphous layer and an N-type doped microcrystalline silicon layer are sequentially deposited on the surface and the side face of the other side of the substrate; depositing a P-type doped microcrystalline silicon layer on the surface of the first intrinsic amorphous layer and the side surface of the substrate, wherein the P-type doped microcrystalline silicon layer is overlapped with the N-type doped microcrystalline silicon layer on the side surface of the substrate; preparing a back TCO film layer and a front TCO film layer; preparing metal electrodes on the surfaces of the back TCO film layer and the front TCO film layer respectively; the deposition temperature of the P-type doped microcrystalline silicon layer is less than 160 DEG C and greater than or equal to 130 DEG C. Through low-temperature deposition of the P-type doped microcrystalline silicon layer, the problems that the efficiency of the heterojunction cell is reduced and the power of the assembly is reduced after lamination are avoided, so that the efficiency, the thermal stability and the power of the assembly of the heterojunction cell are effectively improved.

The invention discloses a boron doping method, a boron doping structure and a back contact battery. The method comprises the following steps: step 1) pre-crystallization treatment; step 2) pre-oxidation; (3) boron diffusion; wherein the pre-crystallization treatment is to treat the amorphous silicon layer in the silicon wafer base material in a gradient variable pressure mode in an inert gas atmosphere. According to the method, before pre-oxidation and boron diffusion, amorphous silicon is converted into microcrystalline silicon in a gradient transformation manner, and gradual crystallization is realized, so that lattice stress is reduced, gradient distribution of grain sizes can be realized, the problem of uneven grain sizes caused by a single crystallization condition and the problem of doping concentration fluctuation caused by an unordered structure of the amorphous silicon are avoided, and the yield of the amorphous silicon is improved. According to the method, the boron atoms can be transferred to a balance position more easily, an ordered structure is formed, the distribution is more uniform, the boron-doped structure with better sheet resistance uniformity is obtained, and the photoelectric conversion efficiency of the back contact battery based on the boron-doped structure is further improved.

A heterojunction battery and a preparation method therefor are provided. The heterojunction battery includes a crystalline silicon layer, a first intrinsic amorphous silicon layer, an N-type doped microcrystalline silicon layer, a first transparent conductive layer, and a first metal electrode are sequentially arranged on a front surface of the crystalline silicon layer from inside to outside, and a second intrinsic amorphous silicon layer, a P-type doped microcrystalline silicon layer, a second transparent conductive layer, and a second metal electrode are sequentially arranged on a back surface of the crystalline silicon layer from inside to outside. A local reduction layer is formed on a surface of the first transparent conductive layer that is under the first metal electrode and / or on a surface of the second transparent conductive layer that is under the second metal electrode.

The invention discloses a heterojunction solar cell and a manufacturing method and equipment thereof. A front passivation layer and a front doping layer are arranged on the front side of the silicon substrate, and a back passivation layer, a back intrinsic layer and a back doping layer are arranged on the back side of the silicon substrate. The front passivation layer and the back passivation layer are made of intrinsic amorphous silicon-based materials; the front doping layer and the back doping layer can be made of microcrystalline silicon-based materials, the back intrinsic layer is made of microcrystalline silicon-based materials or nanocrystalline silicon-based materials, and the back intrinsic layer is formed on the back passivation layer; and forming a back doping layer on the back intrinsic layer. According to the method, the microcrystalline silicon film layer with high quality and high crystallization rate can be quickly deposited, so that the conversion efficiency of the cell is improved, and the current leakage at the edge side of the silicon substrate is reduced.

The invention relates to the field of solar cells, in particular to a solar cell and a photovoltaic module. The solar cell includes: a substrate; the passivation layer is arranged on the surface of the substrate, and the passivation layer comprises an intrinsic amorphous silicon layer; the intrinsic silicon oxide layer is arranged on the face, away from the substrate, of the passivation layer, the content range of high-valence silicon oxide in the intrinsic silicon oxide layer is larger than 50% and smaller than or equal to 95%, and the valence state of the silicon element in the high-valence silicon oxide is larger than or equal to positive bivalence; the doped layer comprises a doped microcrystalline silicon layer, and the doped microcrystalline silicon layer is arranged on the face, away from the passivation layer, of the intrinsic silicon oxide layer; the transparent conducting layer is arranged on one surface, deviating from the intrinsic silicon oxide layer, of the doping layer; and the electrode is arranged on the transparent conductive layer. The solar cell can solve the problem of performance restriction of the passivation layer and the doping layer caused by the existence of the incubation layer.

The embodiment of the utility model provides a solar cell, a photovoltaic module and a photovoltaic system, the solar cell comprises a first surface and a second surface which are opposite to each other, and a side surface located between the first surface and the second surface, and the side surface is provided with a first area close to the first surface and a second area close to the second surface; a first tunneling oxide layer, a first doped polycrystalline silicon layer and a first antireflection layer are sequentially stacked on the first region; and a first intrinsic amorphous silicon layer, a first doped microcrystalline silicon layer and a second antireflection layer are sequentially laminated on the second region. According to the embodiment of the invention, the edge passivation can be enhanced, the efficiency of the solar cell is improved, the edge winding plating of the tunneling oxide layer and the doped polycrystalline silicon does not need to be removed, the etching process is reduced, and the production cost is reduced.

The invention relates to the technical field of solar cells, in particular to a low-cost silicon heterojunction solar cell and a preparation method thereof, a light receiving surface of the low-cost silicon heterojunction solar cell comprises a microcrystalline silicon film and a metal electrode, a front transparent conductive film is arranged on the microcrystalline silicon film below the metal electrode, and anti-reflection films are arranged on other microcrystalline silicon films. The front transparent conductive film is arranged below the metal electrode, so that compared with a conventional heterojunction solar cell, the area of the front transparent conductive film is reduced, and the production cost is greatly reduced.

To provide a large-sized semiconductor device that operates at high speed.SOLUTION: A top gate-type transistor having a monocrystal semiconductor layer and a bottom gate-type transistor having an amorphous silicon (or microcrystal silicon) semiconductor layer are formed on the same substrate. The gate wire that each of the transistors includes is formed in the same layer, and the source and drain electrodes likewise are formed in the same layer. In this way, the manufacturing steps are cut back. Thus, by only adding a few steps to the manufacturing process of bottom gate-type transistors, it is possible to manufacture two types of transistors.SELECTED DRAWING: Figure 6

The invention provides a preparation method of a heterojunction solar cell and the heterojunction solar cell. The preparation method comprises the following steps: firstly, providing a monocrystalline silicon wafer and carrying out texturing cleaning on the monocrystalline silicon wafer, then respectively forming a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer on the front and back surfaces of the monocrystalline silicon wafer, then forming an N-type amorphous / microcrystalline silicon layer on the first intrinsic amorphous silicon layer, then forming a P-type amorphous / microcrystalline silicon layer on the second intrinsic amorphous silicon layer, and finally forming a P-type amorphous / microcrystalline silicon layer on the P-type amorphous / microcrystalline silicon layer on the N-type amorphous / microcrystalline silicon layer. Respectively forming a first transparent conductive film layer and a second transparent conductive film layer on the N-type amorphous / microcrystalline silicon layer and the P-type amorphous / microcrystalline silicon layer, then forming a first anti-reflection film layer and a second anti-reflection film layer on the first transparent conductive film layer and the second transparent conductive film layer, and then forming a first groove and a second groove penetrating through the first anti-reflection film layer and the second anti-reflection film layer; respectively forming a first electrode and a second electrode in the first groove and the second groove through an electroplating process; and finally, carrying out an annealing process. The mass production of the heterojunction solar cell with the anti-reflection film can be realized, and the contact between the metal electrode and the transparent conductive layer is not influenced.

The present application belongs to the technical field of back-contact cells, and specifically relates to a back-contact cell with a specific front-side passivation structure, and a preparation method therefor and the application thereof. The back-contact cell comprises a silicon wafer having a front side and a back side, a first semiconductor layer and a second semiconductor layer which are both disposed on the back side of the silicon wafer, and a third semiconductor layer and an antireflective layer which are sequentially disposed outwardly on the front side of the silicon wafer, wherein the third semiconductor layer includes a first intrinsic hydrogenated amorphous silicon layer and an intrinsic oxygen-doped microcrystalline silicon layer which are sequentially disposed outwardly, and the antireflective layer includes a phosphorus-doped silicon nitride layer, a non-phosphorus-doped silicon nitride layer and an oxide layer which are sequentially disposed outwardly. The back-contact cell of the present application can reduce investment in a plate-type PECVD chamber while ensuring a front-side passivation effect, such that investment in devices is reduced, the process flow is simplified, and both the cell density and cell conversion efficiency are improved while the manufacturing costs are reduced.

The invention belongs to the technical field of solar cells, and particularly relates to an HJT solar cell and a preparation method thereof. The HJT solar cell provided by the invention comprises an N-type silicon layer substrate, and a first intrinsic amorphous silicon layer, a hydrogen-doped P-type microcrystalline silicon oxide layer, a P-type doped microcrystalline silicon layer, a first TCO layer and a first collector which are sequentially laminated from inside to outside on one side of the front surface of the N-type silicon layer substrate; and a second intrinsic amorphous silicon layer, a hydrogen-doped N-type microcrystalline silicon oxide layer, an N-type doped microcrystalline silicon layer, a second TCO layer and a second collector are sequentially laminated on one side of the back surface of the N-type silicon layer substrate from inside to outside.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The preparation method of the solar cell comprises the following steps: providing an N-type silicon wafer, and respectively forming a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer on two opposite surfaces of the N-type silicon wafer; forming an N-type doped microcrystalline silicon layer on the first intrinsic amorphous silicon layer and forming a P-type doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer by using an intermittent CO2 plasma treatment process; and forming a first transparent conductive layer and a first electrode on the N-type doped microcrystalline silicon layer, and forming a second transparent conductive layer and a second electrode on the P-type doped microcrystalline silicon layer. The preparation method of the solar cell in the technical scheme of the invention can promote the crystallization of the oxygen-doped microcrystalline silicon, enhance the electrical properties of the microcrystalline silicon, properly reduce the thickness of the doped microcrystalline silicon layer, reduce the process time and reduce the production cost.

The application provides a method for preparing a silicon negative electrode material by using SiF4 as a raw material, and belongs to the field of battery negative electrode materials. The method for preparing the silicon negative electrode material by using SiF4 as the raw material can simultaneously obtain microcrystalline silicon and amorphous silicon by using silicon tetrafluoride as a silicon source, controlling the placement position of a substrate, the radio frequency power of an inductive radio frequency coil and the temperature of a reaction zone; and the silicon material capable of meeting the use of a lithium ion battery negative electrode can be further obtained by controlling the proportion of silicon tetrafluoride, hydrogen and argon. The method provided by the application can simultaneously obtain microcrystalline silicon and amorphous silicon, and the lithium ion battery prepared from the microcrystalline silicon and the amorphous silicon has good cycle life and coulomb efficiency, and can be used as a negative electrode material.

The invention provides a manufacturing method of a doped microcrystalline silicon layer, a heterojunction solar cell and a preparation method of the heterojunction solar cell. The manufacturing method of the doped microcrystalline silicon layer comprises the steps that firstly, PECVD equipment is provided, the PECVD equipment comprises a reaction cavity, an upper polar plate and a lower polar plate, the upper polar plate and the lower polar plate are located in the reaction cavity and are oppositely arranged in parallel, and the upper polar plate is connected with a radio frequency power source; placing a silicon wafer on the lower polar plate and between the upper polar plate and the lower polar plate; the substrate distance between the upper pole plate and the lower pole plate is set as a first distance, a microcrystalline silicon seed layer is deposited through a doping deposition process, and the first distance ranges from 26 mm to 50 mm; and finally, the distance between the substrates is adjusted to be a second distance, the doping deposition process is carried out, a microcrystalline silicon main layer is deposited on the microcrystalline silicon seed layer, and the range of the second distance is 10-24 mm. According to the invention, the quality of the doped microcrystalline silicon layer can be improved, the stability of the heterojunction solar cell is improved, and the dark attenuation of the heterojunction solar cell is reduced.

A driving substrate, a manufacturing method thereof and a display panel are provided. First thin film transistors are provided in a pixel region and second thin film transistors are provided in a frame region, in which a first active layer of the first thin film transistor includes an amorphous silicon layer and a microcrystalline silicon layer stacked, and a channel of the second active layer of the second thin film transistor includes polysilicon, so that mobility of the second thin film transistor is greater than that of the first thin film transistor. Also, the polysilicon can be formed by crystallizing the amorphous silicon layer and the microcrystalline silicon layer, which are stacked, as a monolithic crystal.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.