The invention discloses a
zinc-
oxide-base
amorphous oxide semiconductor thin film transistor and a manufacturing method of the
zinc-
oxide-base
amorphous oxide semiconductor thin film transistor. The
zinc-
oxide-base
amorphous oxide semiconductor thin film transistor comprises a substrate, a grid
electrode, a grid insulating layer, an
active layer, a source
electrode and a drain
electrode, wherein the grid electrode is formed on the substrate, the grid electrode and the substrate are covered with the grid insulating layer, the
active layer is formed on the grid insulating layer and corresponds to the grid electrode, and the two ends of the
active layer are covered with the source electrode and the drain electrode respectively; a zinc-oxide-base
amorphous oxide semiconductor doped with X and Y serves as the active layer, when the distance between the active layer and the grid insulating layer gradually increases, the content of the X gradually decreases, and the content of the Y gradually increases; the X is one of Cd, In, Sn, Sb, Ti, Pb and As, and the Y is one of Ga, Al, Hf, Ge, Ca and Cu. According to the zinc-oxide-base
amorphous oxide semiconductor thin film
transistor and the manufacturing method of the zinc-oxide-base
amorphous oxide semiconductor thin film
transistor, the mobility ratio of a device can be effectively improved, the magnitude of the working current of the device can be effectively improved, the frequency of the phenomenon of
threshold voltage drift of the device is reduced, influence of the technology, illumination and gas in the outside world on the device is reduced, and
mechanical stability of the device is improved.